KR20130102591A - 박막 트랜지스터를 증착하기 위한 방법 및 시스템 - Google Patents

박막 트랜지스터를 증착하기 위한 방법 및 시스템 Download PDF

Info

Publication number
KR20130102591A
KR20130102591A KR1020137009067A KR20137009067A KR20130102591A KR 20130102591 A KR20130102591 A KR 20130102591A KR 1020137009067 A KR1020137009067 A KR 1020137009067A KR 20137009067 A KR20137009067 A KR 20137009067A KR 20130102591 A KR20130102591 A KR 20130102591A
Authority
KR
South Korea
Prior art keywords
sputtering
substrate
target
deposition
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137009067A
Other languages
English (en)
Korean (ko)
Inventor
에벨린 쉐어
올리버 그라우
롤란드 베버
우도 슈라이버
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20130102591A publication Critical patent/KR20130102591A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020137009067A 2010-09-10 2011-08-31 박막 트랜지스터를 증착하기 위한 방법 및 시스템 Ceased KR20130102591A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10176247.4 2010-09-10
EP10176247A EP2428994A1 (en) 2010-09-10 2010-09-10 Method and system for depositing a thin-film transistor
PCT/EP2011/065046 WO2012031962A1 (en) 2010-09-10 2011-08-31 Method and system for depositing a thin-film transistor

Publications (1)

Publication Number Publication Date
KR20130102591A true KR20130102591A (ko) 2013-09-17

Family

ID=43430788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137009067A Ceased KR20130102591A (ko) 2010-09-10 2011-08-31 박막 트랜지스터를 증착하기 위한 방법 및 시스템

Country Status (7)

Country Link
US (1) US7977255B1 (https=)
EP (1) EP2428994A1 (https=)
JP (1) JP2013539219A (https=)
KR (1) KR20130102591A (https=)
CN (1) CN103098218B (https=)
TW (1) TWI524432B (https=)
WO (1) WO2012031962A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180040163A (ko) * 2016-10-11 2018-04-20 삼성디스플레이 주식회사 증착장치

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496295B (zh) 2008-10-31 2015-08-11 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
US9142462B2 (en) 2010-10-21 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having a contact etch stop layer and method of forming the same
DK2675335T3 (da) 2011-02-16 2022-01-03 Massachusetts Gen Hospital Optisk kobler til et endoskop
US12471759B2 (en) 2011-02-16 2025-11-18 The General Hospital Corporation Optical coupler for an endoscope
KR20150023054A (ko) * 2012-06-29 2015-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타겟의 사용 방법 및 산화물막의 제작 방법
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP6059513B2 (ja) * 2012-11-14 2017-01-11 出光興産株式会社 スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
US9326327B2 (en) * 2013-03-15 2016-04-26 Ppg Industries Ohio, Inc. Stack including heater layer and drain layer
JP2016519429A (ja) 2013-03-19 2016-06-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層パッシベーション又はエッチング停止ｔｆｔ
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US9337030B2 (en) 2014-03-26 2016-05-10 Intermolecular, Inc. Method to grow in-situ crystalline IGZO using co-sputtering targets
US9459442B2 (en) 2014-09-23 2016-10-04 Scott Miller Optical coupler for optical imaging visualization device
US10548467B2 (en) 2015-06-02 2020-02-04 GI Scientific, LLC Conductive optical element
KR102888010B1 (ko) 2015-07-21 2025-11-20 지아이 사이언티픽, 엘엘씨 각도 조정성 배출 포털을 갖는 내시경 부속품
JP6534123B2 (ja) * 2016-03-23 2019-06-26 日本アイ・ティ・エフ株式会社 被覆膜とその製造方法およびｐｖｄ装置
DE102016118799B4 (de) * 2016-10-05 2022-08-11 VON ARDENNE Asset GmbH & Co. KG Verfahren zum Magnetronsputtern
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
JP2020200520A (ja) * 2019-06-12 2020-12-17 株式会社アルバック 成膜装置、スパッタリングターゲット機構及び成膜方法
CN117646181A (zh) * 2023-11-17 2024-03-05 中国科学院深圳先进技术研究院 一种半导体封装用二氧化硅薄膜及其制备方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459763B1 (en) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JP3197557B2 (ja) 1990-11-27 2001-08-13 株式会社半導体エネルギー研究所 被膜形成方法
US5576231A (en) 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
JP3963961B2 (ja) 1994-08-31 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
DE19651378A1 (de) * 1996-12-11 1998-06-18 Leybold Systems Gmbh Vorrichtung zum Aufstäuben von dünnen Schichten auf flache Substrate
DE19726966C1 (de) * 1997-06-25 1999-01-28 Flachglas Ag Verfahren zur Herstellung einer transparenten Silberschicht mit hoher spezifischer elektrischer Leitfähigkeit , Glasscheibe mit einem Dünnschichtsystem mit einer solchen Silberschicht und deren Verwendung
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
JP2001267311A (ja) * 2000-03-14 2001-09-28 Sanyo Shinku Kogyo Kk Ｔｆｔ用ゲート膜等の成膜方法とその装置
JP3944341B2 (ja) * 2000-03-28 2007-07-11 株式会社東芝 酸化物エピタキシャル歪格子膜の製造法
CZ296094B6 (cs) * 2000-12-18 2006-01-11 Shm, S. R. O. Zarízení pro odparování materiálu k povlakování predmetu
JP4663139B2 (ja) * 2001-02-16 2011-03-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003119562A (ja) * 2001-08-14 2003-04-23 Samsung Corning Co Ltd インラインスパッタリング装置及びスパッタリング方法
CN2516564Y (zh) 2001-12-03 2002-10-16 深圳豪威真空光电子股份有限公司 具有中频反应溅射二氧化硅的氧化铟锡玻璃在线联镀装置
DE10159907B4 (de) * 2001-12-06 2008-04-24 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co. Beschichtungsverfahren
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
JP4689159B2 (ja) 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
US8101467B2 (en) 2003-10-28 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver
JP2005179716A (ja) * 2003-12-17 2005-07-07 Sony Corp スパッタリング装置
JP2007154224A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd スパッタリング方法および装置
CN101464530A (zh) * 2008-01-23 2009-06-24 四川大学 一种ZnSe红外增透膜及其制备方法
EP2096189A1 (en) 2008-02-28 2009-09-02 Applied Materials, Inc. Sprayed Si- or Si:Al-target with low iron content
US8057649B2 (en) * 2008-05-06 2011-11-15 Applied Materials, Inc. Microwave rotatable sputtering deposition
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
TWI473896B (zh) * 2008-06-27 2015-02-21 出光興產股份有限公司 From InGaO 3 (ZnO) crystal phase, and a method for producing the same
US20100236920A1 (en) * 2009-03-20 2010-09-23 Applied Materials, Inc. Deposition apparatus with high temperature rotatable target and method of operating thereof
CN101570853B (zh) * 2009-05-08 2012-05-23 中国科学技术大学 利用磁控溅射制备形貌可控的锌和锌氧化物纳米材料的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180040163A (ko) * 2016-10-11 2018-04-20 삼성디스플레이 주식회사 증착장치

Also Published As

Publication number Publication date
CN103098218A (zh) 2013-05-08
US7977255B1 (en) 2011-07-12
JP2013539219A (ja) 2013-10-17
EP2428994A1 (en) 2012-03-14
TWI524432B (zh) 2016-03-01
TW201214581A (en) 2012-04-01
WO2012031962A1 (en) 2012-03-15
CN103098218B (zh) 2017-04-12

Similar Documents

Publication Publication Date Title
KR20130102591A (ko) 박막 트랜지스터를 증착하기 위한 방법 및 시스템
US7674497B2 (en) Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
KR100955595B1 (ko) 막 형성장치와 막 형성 방법 및 클리닝 방법
US20150136585A1 (en) Method for sputtering for processes with a pre-stabilized plasma
US20070181421A1 (en) Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
KR102140210B1 (ko) 층을 증착하는 방법, 트랜지스터를 제조하는 방법, 전자 디바이스에 대한 층 스택, 및 전자 디바이스
CN108300968B (zh) 成膜方法及真空处理装置
TW202004832A (zh) 泵送系統與包括此泵送系統的電漿處理設備、以及處理基板的方法
CN1934913B (zh) 等离子体发生装置
JP5827499B2 (ja) 装置の表面処理方法
CN101182628B (zh) 溅射镀膜离子束辐照增强方法
US20070240637A1 (en) Thin-Film Forming Apparatus
TWI649804B (zh) 在通孔或溝槽中沈積層的方法、製造電晶體的方法、用於電子裝置的層堆疊、及電子裝置
CN113699495A (zh) 磁控溅射组件、磁控溅射设备及磁控溅射方法
CN109072400B (zh) 用于基板的真空处理的方法和用于基板的真空处理的设备
KR100953741B1 (ko) 이.씨.알. 플라즈마 성막 장비
CN107406967A (zh) 氧化铝膜的成膜方法和形成方法以及溅射装置
JP2010037594A (ja) スパッタリング装置
US20240102152A1 (en) Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus
JP2003003265A (ja) プラズマ試料処理法、薄膜及び平面表示装置
JP2007173803A (ja) 薄膜成膜装置
WO2016099437A1 (en) Method and apparatus for layer deposition on a substrate, and method for manufacturing a thin film transistor on a substrate

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000