KR20130097186A - 규소 주괴를 고형화시키기 위한 도가니 - Google Patents

규소 주괴를 고형화시키기 위한 도가니 Download PDF

Info

Publication number
KR20130097186A
KR20130097186A KR1020137006424A KR20137006424A KR20130097186A KR 20130097186 A KR20130097186 A KR 20130097186A KR 1020137006424 A KR1020137006424 A KR 1020137006424A KR 20137006424 A KR20137006424 A KR 20137006424A KR 20130097186 A KR20130097186 A KR 20130097186A
Authority
KR
South Korea
Prior art keywords
crucible
layer
silicon
tiles
polysilazane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137006424A
Other languages
English (en)
Korean (ko)
Inventor
찰스 유게트
엠마뉴엘 플라오트
엘렌 리그니에르
Original Assignee
꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 filed Critical 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
Publication of KR20130097186A publication Critical patent/KR20130097186A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D9/00Crystallisation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24Stationary reactors without moving elements inside
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225Nitrides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/0087Uses not provided for elsewhere in C04B2111/00 for metallurgical applications
    • C04B2111/00879Non-ferrous metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
KR1020137006424A 2010-08-27 2011-08-26 규소 주괴를 고형화시키기 위한 도가니 Ceased KR20130097186A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1056804A FR2964117B1 (fr) 2010-08-27 2010-08-27 Creuset pour la solidification de lingot de silicium
FR1056804 2010-08-27
PCT/IB2011/053748 WO2012025905A1 (fr) 2010-08-27 2011-08-26 Creuset pour la solidification de lingot de silicium

Publications (1)

Publication Number Publication Date
KR20130097186A true KR20130097186A (ko) 2013-09-02

Family

ID=43037050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137006424A Ceased KR20130097186A (ko) 2010-08-27 2011-08-26 규소 주괴를 고형화시키기 위한 도가니

Country Status (8)

Country Link
US (1) US20130247334A1 (https=)
EP (1) EP2609043A1 (https=)
JP (1) JP5975994B2 (https=)
KR (1) KR20130097186A (https=)
CN (1) CN103080028B (https=)
BR (1) BR112013004537A2 (https=)
FR (1) FR2964117B1 (https=)
WO (1) WO2012025905A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230157088A (ko) * 2022-05-09 2023-11-16 (주)셀릭 저저항 대구경 잉곳 제조장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5557334B2 (ja) * 2010-12-27 2014-07-23 コバレントマテリアル株式会社 シリコン単結晶引上げ用シリカガラスルツボ
US9352389B2 (en) 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
FR2986228B1 (fr) * 2012-01-31 2014-02-28 Commissariat Energie Atomique Creuset pour la solidification de lingot de silicium.
DE102012019519B4 (de) 2012-10-05 2015-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nichteisenmetallen sowie Verwendungszwecke
TWI643983B (zh) * 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
DE102016201495B4 (de) 2016-02-01 2019-05-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Tiegel mit einer Innenbeschichtung aus SiC als Diffusionsbarriere für Metalle sowie Verfahren zu dessen Herstellung, Verwendung und darin hergestellte Halbleiterkristalle
JP6564151B1 (ja) * 2019-02-28 2019-08-21 株式会社アドマップ SiC膜単体構造体
CN112457027B (zh) * 2020-11-26 2022-10-11 西安鑫垚陶瓷复合材料有限公司 大尺寸圆截面陶瓷基复合材料构件熔融渗硅工装及方法
CN116462520A (zh) * 2023-04-28 2023-07-21 长沙新立硅材料科技有限公司 一种用于单晶硅拉制的无氧氮化硅坩埚的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU603724B2 (en) * 1988-01-22 1990-11-22 Ethyl Corporation Organoborosilazane polymers
JPH0365581A (ja) * 1989-08-01 1991-03-20 Nkk Corp 炭素焼結体の耐酸化性向上方法
US5114749A (en) * 1989-08-01 1992-05-19 Nkk Corporation Method for manufacturing carbon material having good resistance to oxidation by coating the carbon material with an inorganic polysilazane and then heating
JPH0365574A (ja) * 1989-08-01 1991-03-20 Nkk Corp 炭素と炭化ケイ素からなる多孔体の製造方法
US5322825A (en) 1992-05-29 1994-06-21 Allied-Signal Inc. Silicon oxycarbonitride by pyrolysis of polycyclosiloxanes in ammonia
US5837318A (en) * 1995-04-26 1998-11-17 Mcdonnell Douglas Corporation Process for production of low dielectric ceramic composites
US8405183B2 (en) * 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
US7642209B2 (en) * 2003-08-26 2010-01-05 Kyocera Corporation Silicon nitride sintered material and method for manufacturing
DE10342042A1 (de) * 2003-09-11 2005-04-07 Wacker-Chemie Gmbh Verfahren zur Herstellung eines Si3N4 beschichteten SiO2-Formkörpers
DE102005032790A1 (de) * 2005-06-06 2006-12-07 Deutsche Solar Ag Behälter mit Beschichtung und Herstellungsverfahren
DE102005042944A1 (de) 2005-09-08 2007-03-22 Clariant International Limited Polysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen
TWI400369B (zh) * 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
DE102006008308A1 (de) * 2006-02-23 2007-08-30 Clariant International Limited Polysilazane enthaltende Beschichtungen zur Vermeidung von Zunderbildung und Korrosion
DE102007053284A1 (de) * 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
JP2010030851A (ja) * 2008-03-24 2010-02-12 Kyocera Corp 結晶シリコン粒子の製造方法、坩堝及びその製造方法、並びに結晶シリコン粒子の製造装置
JP2010053008A (ja) * 2008-08-29 2010-03-11 Kyocera Corp 坩堝及びその製造方法、並びに結晶シリコン粒子の製造装置
CN102272074B (zh) * 2008-08-29 2014-05-28 Skf股份公司 大型陶瓷部件及其制造方法
US8916961B2 (en) * 2009-07-24 2014-12-23 Kabushiki Kaisha Toshiba Insulation sheet made from silicon nitride, and semiconductor module structure using the same
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230157088A (ko) * 2022-05-09 2023-11-16 (주)셀릭 저저항 대구경 잉곳 제조장치

Also Published As

Publication number Publication date
EP2609043A1 (fr) 2013-07-03
CN103080028B (zh) 2016-08-24
JP2013536150A (ja) 2013-09-19
US20130247334A1 (en) 2013-09-26
FR2964117A1 (fr) 2012-03-02
WO2012025905A1 (fr) 2012-03-01
BR112013004537A2 (pt) 2016-06-07
FR2964117B1 (fr) 2012-09-28
CN103080028A (zh) 2013-05-01
JP5975994B2 (ja) 2016-08-23

Similar Documents

Publication Publication Date Title
KR20130097186A (ko) 규소 주괴를 고형화시키기 위한 도가니
KR101426015B1 (ko) 다층 아키텍쳐를 구비하고 액체 실리콘과 접촉하기 위한 물질
KR100427118B1 (ko) 열처리용지그및그제조방법
TWI526585B (zh) Graphite crucible for single crystal pulling device and method for manufacturing the same
US9428844B2 (en) Crucible for solidifying a silicon ingot
JP4077601B2 (ja) 単結晶引き上げ用c/cルツボの製造方法
CN102859049B (zh) 制造半导体级硅晶锭的方法、可再使用的坩埚及其制造方法
JP2006131451A (ja) 単結晶引き上げ用ルツボとその製造方法
KR101732573B1 (ko) 섬유상 세라믹 발열체 및 그 제조방법
US10023972B2 (en) Substrate for solidifying a silicon ingot
JP6119586B2 (ja) 炭化珪素被覆黒鉛部材の製造方法、炭化珪素被覆黒鉛部材、及びシリコン結晶の製造方法
KR102215074B1 (ko) 산화안정성이 향상된 코팅층을 가진 탄소재 및 그 제조 방법
KR101101368B1 (ko) 탄화규소 피복 그라파이트 제조방법
JPH06263569A (ja) 炭素質基材の耐酸化性被膜形成法
JP4170426B2 (ja) 単結晶引上げ装置用高温部材及びその製造方法
JP4218853B2 (ja) 単結晶引き上げ用炭素質ルツボとその製造方法
JP3739507B2 (ja) 熱処理用治具の製造方法
KR20180117760A (ko) 실리카 도가니 내벽에 질화규소를 코팅하는 방법
CN117735856A (zh) 用于高纯锗区熔的石英舟镀膜方法
JP3461415B2 (ja) 炭素繊維強化炭素材の耐酸化処理法
JPH10167861A (ja) 炭素繊維強化炭素材の耐酸化処理方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20130313

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160803

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171115

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20180427

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20171115

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I