KR20090086148A - 리드 프레임 및 그것을 이용한 회로 장치의 제조 방법 - Google Patents

리드 프레임 및 그것을 이용한 회로 장치의 제조 방법 Download PDF

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Publication number
KR20090086148A
KR20090086148A KR1020080127219A KR20080127219A KR20090086148A KR 20090086148 A KR20090086148 A KR 20090086148A KR 1020080127219 A KR1020080127219 A KR 1020080127219A KR 20080127219 A KR20080127219 A KR 20080127219A KR 20090086148 A KR20090086148 A KR 20090086148A
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KR
South Korea
Prior art keywords
lead frame
groove
unit
support portion
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080127219A
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English (en)
Korean (ko)
Inventor
데쯔야 후꾸시마
다까시 기따자와
Original Assignee
산요덴키가부시키가이샤
산요 세미컨덕터 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산요덴키가부시키가이샤, 산요 세미컨덕터 컴퍼니 리미티드 filed Critical 산요덴키가부시키가이샤
Publication of KR20090086148A publication Critical patent/KR20090086148A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1020080127219A 2008-02-06 2008-12-15 리드 프레임 및 그것을 이용한 회로 장치의 제조 방법 Ceased KR20090086148A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-025930 2008-02-06
JP2008025930A JP5144294B2 (ja) 2008-02-06 2008-02-06 リードフレームおよびそれを用いた回路装置の製造方法

Publications (1)

Publication Number Publication Date
KR20090086148A true KR20090086148A (ko) 2009-08-11

Family

ID=41071116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080127219A Ceased KR20090086148A (ko) 2008-02-06 2008-12-15 리드 프레임 및 그것을 이용한 회로 장치의 제조 방법

Country Status (3)

Country Link
JP (1) JP5144294B2 (enrdf_load_stackoverflow)
KR (1) KR20090086148A (enrdf_load_stackoverflow)
TW (1) TW200939439A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5215980B2 (ja) * 2009-10-30 2013-06-19 株式会社三井ハイテック 半導体装置の製造方法
JP5397195B2 (ja) * 2009-12-02 2014-01-22 日立化成株式会社 光半導体素子搭載用基板の製造方法、及び、光半導体装置の製造方法
JP5613463B2 (ja) * 2010-06-03 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
DE102015100025A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Leiterrahmen
JP6924411B2 (ja) * 2017-08-28 2021-08-25 大日本印刷株式会社 リードフレームおよび半導体装置の製造方法
JP7548871B2 (ja) * 2021-05-31 2024-09-10 Ｔｏｗａ株式会社 成形型、樹脂成形装置及び樹脂成形品の製造方法
TWM654617U (zh) * 2024-01-08 2024-04-21 大陸商蘇州震坤科技有限公司 減少切單時刀損耗的導線架結構

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077235A (ja) * 1999-09-06 2001-03-23 Mitsui High Tec Inc 半導体素子搭載用基板
JP3634757B2 (ja) * 2001-02-02 2005-03-30 株式会社三井ハイテック リードフレーム
JP3628971B2 (ja) * 2001-02-15 2005-03-16 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法
JP2007294715A (ja) * 2006-04-26 2007-11-08 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2009188150A (ja) 2009-08-20
JP5144294B2 (ja) 2013-02-13
TW200939439A (en) 2009-09-16

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