KR20020073455A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR20020073455A KR20020073455A KR1020020048358A KR20020048358A KR20020073455A KR 20020073455 A KR20020073455 A KR 20020073455A KR 1020020048358 A KR1020020048358 A KR 1020020048358A KR 20020048358 A KR20020048358 A KR 20020048358A KR 20020073455 A KR20020073455 A KR 20020073455A
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- South Korea
- Prior art keywords
- substrate
- lead
- semiconductor device
- mounting
- resin
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000004382 potting Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Abstract
Description
Claims (3)
- 적어도 하나의 소자 탑재부를 갖는 절연 기판을 제공하는 공정- 상기 절연 기판의 이면에는 적어도 하나의 외부 전극을 갖고 그 전면에는 적어도 하나의 아일런드 및 적어도 하나의 리드를 갖고, 상기 적어도 하나의 외부 전극과 상기 적어도 하나의 아일런드 또는 상기 적어도 하나의 리드가 적어도 하나의 관통홀을 통해 상호접속됨-;상기 적어도 하나의 소자 탑재부에 적어도 하나의 반도체 칩을 고착시키는 공정;상기 적어도 하나의 반도체 칩을 수지 재료로 피복하는 공정, 및상기 적어도 하나의 외부 전극과 상호교차하지 않는 적어도 하나의 평면을 따라 상기 수지 재료와 상기 절연 기판을 분리하는 공정을 포함하고,상기 수지 재료와 상기 절연 기판이 단부를 갖는 적어도 하나의 세그먼트로 분리되고, 상기 적어도 하나의 세그먼트는 상기 적어도 하나의 소자 탑재부 중 하나와, 상기 단부로부터 내측으로 이격되어 있는 상기 적어도 하나의 외부 전극 중 적어도 하나와, 상기 단부로부터 내측으로 이격되어 있는 상기 적어도 하나의 아일런드 중 적어도 하나와, 상기 단부로부터 내측으로 이격되어 있는 상기 적어도 하나의 리드 중 적어도 하나와, 상기 단부로부터 내측으로 이격되어 있는 상기 적어도 하나의 관통홀 중 적어도 하나를 포함하는 것을 특징으로 하는 반도체 장치의제조 방법.
- 제1항에 있어서,상기 분리 공정이 다이싱 블레이드에 의한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 수지 재료에 의한 피복 공정이 액체 수지의 포팅에 의한 것을 특징으로 하는 반도체 장치의 제조 방법.
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JPJP-P-1998-00328320 | 1998-11-18 | ||
JP32832098A JP4073098B2 (ja) | 1998-11-18 | 1998-11-18 | 半導体装置の製造方法 |
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KR10-1999-0050988A Division KR100369204B1 (ko) | 1998-11-18 | 1999-11-17 | 반도체 장치의 제조 방법 |
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KR10-2002-0048358A KR100369205B1 (ko) | 1998-11-18 | 2002-08-16 | 반도체 장치의 제조 방법 |
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US (2) | US6326232B1 (ko) |
EP (2) | EP1003213B1 (ko) |
JP (1) | JP4073098B2 (ko) |
KR (2) | KR100369204B1 (ko) |
TW (1) | TW472368B (ko) |
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JP4073098B2 (ja) * | 1998-11-18 | 2008-04-09 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6696751B2 (en) * | 2000-02-10 | 2004-02-24 | Shinko Electric Industries Co., Ltd. | Semiconductor device and portable device having a mounting region sharing point symmetry |
US6856006B2 (en) * | 2002-03-28 | 2005-02-15 | Siliconix Taiwan Ltd | Encapsulation method and leadframe for leadless semiconductor packages |
KR100722322B1 (ko) * | 2000-07-06 | 2007-05-28 | 페어차일드코리아반도체 주식회사 | 반도체 패키지 |
JP4562940B2 (ja) * | 2001-04-03 | 2010-10-13 | 富士通セミコンダクター株式会社 | 半導体装置用基板 |
JP4632010B2 (ja) * | 2001-06-22 | 2011-02-16 | ミツミ電機株式会社 | 半導体集積回路パッケージの製造方法 |
CN100347869C (zh) * | 2004-09-14 | 2007-11-07 | 宏齐科技股份有限公司 | 发光芯片的封装结构 |
CN101101882A (zh) * | 2006-07-05 | 2008-01-09 | 阎跃军 | 基板树脂封装方法 |
CN103000768A (zh) * | 2011-09-09 | 2013-03-27 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
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JPS58201347A (ja) * | 1982-05-20 | 1983-11-24 | Unie Kurisutaru Kk | リ−ドレスチツプ部品及びその製造方法 |
JP2901091B2 (ja) * | 1990-09-27 | 1999-06-02 | 株式会社日立製作所 | 半導体装置 |
JPH05129473A (ja) | 1991-11-06 | 1993-05-25 | Sony Corp | 樹脂封止表面実装型半導体装置 |
TW232065B (ko) * | 1992-04-16 | 1994-10-11 | Sharp Kk | |
EP1213754A3 (en) | 1994-03-18 | 2005-05-25 | Hitachi Chemical Co., Ltd. | Fabrication process of semiconductor package and semiconductor package |
US5832600A (en) * | 1995-06-06 | 1998-11-10 | Seiko Epson Corporation | Method of mounting electronic parts |
JPH0936151A (ja) | 1995-07-20 | 1997-02-07 | Japan Aviation Electron Ind Ltd | 小型樹脂モールド集積回路装置の製造方法およびこの方法により製造された集積回路装置 |
JP3534501B2 (ja) * | 1995-08-25 | 2004-06-07 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5783866A (en) * | 1996-05-17 | 1998-07-21 | National Semiconductor Corporation | Low cost ball grid array device and method of manufacture thereof |
JPH10135252A (ja) * | 1996-10-29 | 1998-05-22 | Sony Corp | 半導体装置の製造方法 |
JP3402969B2 (ja) | 1996-11-19 | 2003-05-06 | 株式会社東芝 | 半導体装置の製造方法 |
JPH10284525A (ja) | 1997-04-03 | 1998-10-23 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100568571B1 (ko) | 1997-05-09 | 2006-04-07 | 시티즌 도케이 가부시키가이샤 | 반도체 패키지의 제조 방법 및 집합 회로 기판 |
JP4115553B2 (ja) | 1997-05-09 | 2008-07-09 | シチズンホールディングス株式会社 | 半導体パッケージの製造方法 |
FR2764111A1 (fr) | 1997-06-03 | 1998-12-04 | Sgs Thomson Microelectronics | Procede de fabrication de boitiers semi-conducteurs comprenant un circuit integre |
JP4073098B2 (ja) * | 1998-11-18 | 2008-04-09 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3877454B2 (ja) * | 1998-11-27 | 2007-02-07 | 三洋電機株式会社 | 半導体装置の製造方法 |
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- 1999-11-18 EP EP10006970.7A patent/EP2234147A3/en not_active Withdrawn
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US6326232B1 (en) | 2001-12-04 |
EP2234147A3 (en) | 2014-05-21 |
KR100369205B1 (ko) | 2003-01-24 |
EP1003213A3 (en) | 2001-01-17 |
TW472368B (en) | 2002-01-11 |
EP1003213B1 (en) | 2014-11-12 |
US20020022312A1 (en) | 2002-02-21 |
EP1003213A2 (en) | 2000-05-24 |
JP2000150543A (ja) | 2000-05-30 |
US6784523B2 (en) | 2004-08-31 |
KR100369204B1 (ko) | 2003-01-24 |
JP4073098B2 (ja) | 2008-04-09 |
EP2234147A2 (en) | 2010-09-29 |
KR20000035516A (ko) | 2000-06-26 |
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