TW200939439A - Lead frame and manufacturing method of circuit device using the lead frame - Google Patents

Lead frame and manufacturing method of circuit device using the lead frame Download PDF

Info

Publication number
TW200939439A
TW200939439A TW097146558A TW97146558A TW200939439A TW 200939439 A TW200939439 A TW 200939439A TW 097146558 A TW097146558 A TW 097146558A TW 97146558 A TW97146558 A TW 97146558A TW 200939439 A TW200939439 A TW 200939439A
Authority
TW
Taiwan
Prior art keywords
lead frame
support portion
hole
lead
frame
Prior art date
Application number
TW097146558A
Other languages
Chinese (zh)
Inventor
Tetsuya Fukushima
Takashi Kitazawa
Original Assignee
Sanyo Electric Co
Sanyo Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co
Publication of TW200939439A publication Critical patent/TW200939439A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A lead frame and a manufacturing method of a circuit device using the lead frame which make it possible to efficiently manufacture a plurality of circuit devices are provided. The lead frame (10) of the present invention includes units (26) arranged therein, and frame-like first supporting parts (14) and second supporting parts (16) which mechanically support the units (26). Furthermore, half grooves (22) are provided in the first supporting parts corresponding to the extension lines of division lines (20) defined on boundaries between units (26). Moreover, through grooves (24) which pass through parts of the second supporting parts corresponding to the extension lines of division lines (18) are provided.

Description

200939439 六、發明說明: 【發明所屬之技術領域】 本發明係關於使有效率地從一個引線架製造多數個電 路裝置成為可能之引線架及使用該引線架的電路裝置之製 造方法。 【先前技術】 半導體裝置年年大容量化,作為各種訊號線之引線端 子數也隨之有增加的傾向。於是,伴隨著這種傾向而漸漸 © 變為使用弓丨線端子從四個方向導出之QFP(Quad Flat Package :四侧引腳扁平封裝)型的半導體裝置以及qFN (Quad Flat Non-leaded Package:四側無引腳扁平封裝) 型的半導體裝置。另一方面,因為半導體裝置要用於行動 . · · 電話、攜帶型電腦等,所以也要求半導體裝置要小型化、 薄型化、輕量化。因此,在受到減少安裝面積的要求之半 導體裝置,採用使引線從樹脂密封體背面露出,讓其安裝 ❹面積與晶片尺寸相同或略大之CSP(Chip Size Package : 晶片尺寸封裝)型的封裝體。 以往之在樹脂封裝模具内透過密封片而進行樹脂模製 成型之半導體裝置的製造方法’已知有將密封片貼附在引 線架之固接有半導體元件之面的另一面整個面上,然後將 =附有费封片的引線架設置在樹脂封裝模具内,而進行樹 脂模製成型之技術(例如專利文獻1)。 以下,參照第9至帛11圖,針對以往之在樹脂封裝模 具内透過密封片而進行樹脂模製成型之半導體裝置的製造 320612 3 200939439 方法進行簡單的說明。第9圖係用來說明貼附有密封片的 引線架之剖面圖。第10圖係用來說明將引線架設置到樹脂 封裝模具後的狀況之剖面圖。第11圖係用來說明樹脂封裝 體形成後的狀況之剖面圖。 如第9圖所示,首先,在引線架ιοί形成複數個至少 由訊號連接用端子102、及用來承載半導體晶片1〇4之晶 墊(die pad)103所構成之承载部。然後,在引線架i01的 背面貼合密封片106後,以接著劑將半導體晶片1〇4接合 〇在晶墊的上面。之後,以金屬細線105將接合在晶墊 103上的半導體晶片104與訊號連接用端子1〇2予以電性 連接起來。 如第10圖所示,接著”將貼合有密封片1〇6,且接合 有半導體晶片104之引線架1〇1設置在由上模具1〇7及下 模具108所構成之樹脂封裝模具的模穴1〇9内。此時,係 利用上模具107及下模具1〇8失住引線架1〇1與密封片1〇6 ❹的端部,來構成模穴109。然後,在未圖示的步驟中,從 設於樹脂封裝模具之樹脂注入口注入密封樹脂,而進行樹 如第U ®所不’接著,在以密封樹脂充填樹脂封裝 =形成樹脂封裝體110後’使形成有共通的樹脂 裝體110之引線架101從樹脂封裝模具脫離。缺後,在 中’以切獅咖)方式將共通賴脂封裝 110依個個承载部予以切斷,而完成半導體裝置。 (專利文獻1)日本特開2004_172542號公報t 320612 4 200939439 【發明内容】 (發明所欲解決之課題)BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame which enables a plurality of circuit devices to be efficiently manufactured from one lead frame, and a method of manufacturing a circuit device using the lead frame. [Prior Art] Semiconductor devices have been increasing in capacity year by year, and the number of terminal terminals as various signal lines has also increased. With this tendency, it has become a QFP (Quad Flat Package) type semiconductor device and qFN (Quad Flat Non-leaded Package) that are derived from four directions using a bow terminal. Four-sided, leadless flat package) type semiconductor device. On the other hand, semiconductor devices are used for operations. · Telephones, portable computers, etc. Therefore, semiconductor devices are also required to be smaller, thinner, and lighter. Therefore, in a semiconductor device which is required to reduce the mounting area, a lead (Chip Size Package) type package having a ❹ area which is the same as or slightly larger than the wafer size is used. . Conventionally, a method of manufacturing a semiconductor device in which a resin molding is performed by a sealing sheet in a resin package mold is known in which a sealing sheet is attached to the entire surface of the other surface of the lead frame to which the semiconductor element is fixed. Then, the lead frame to which the seal sheet is attached is placed in a resin package mold to perform resin molding (for example, Patent Document 1). Hereinafter, a method of manufacturing a semiconductor device in which a resin molding is performed by a sealing sheet in a resin sealing mold will be described with reference to Figs. 9 to 11 in the drawings. Figure 9 is a cross-sectional view showing a lead frame to which a sealing sheet is attached. Fig. 10 is a cross-sectional view for explaining a state in which the lead frame is placed in a resin package mold. Fig. 11 is a cross-sectional view for explaining a state after formation of a resin package. As shown in Fig. 9, first, a plurality of load-bearing portions including at least a signal connection terminal 102 and a die pad 103 for carrying the semiconductor wafer 1〇4 are formed in the lead frame. Then, after the sealing sheet 106 is bonded to the back surface of the lead frame i01, the semiconductor wafer 1〇4 is bonded to the upper surface of the crystal pad with an adhesive. Thereafter, the semiconductor wafer 104 bonded to the crystal pad 103 is electrically connected to the signal connection terminal 1〇2 by the thin metal wires 105. As shown in Fig. 10, the lead frame 1〇1 to which the sealing sheet 1〇6 is bonded and to which the semiconductor wafer 104 is bonded is disposed in the resin package mold composed of the upper mold 1〇7 and the lower mold 108. In the cavity 1〇9, at this time, the upper die 107 and the lower die 1〇8 are used to lose the end portions of the lead frame 1〇1 and the sealing sheet 1〇6 来 to form the cavity 109. Then, in the figure In the step shown, the sealing resin is injected from the resin injection port provided in the resin encapsulating mold, and the tree is not subjected to the U®, and then, after the resin encapsulation is sealed with the sealing resin = the resin package 110 is formed, the common is formed. The lead frame 101 of the resin package 110 is detached from the resin package mold. After the defect, the common lyophilized package 110 is cut by the respective load-bearing portions in the middle of the process, and the semiconductor device is completed. 1) Japanese Laid-Open Patent Publication No. 2004_172542 t 320612 4 200939439 [Summary of the Invention] (Problems to be Solved by the Invention)

❹ 然而,上述之半導體裝置之製造方法,在進行樹脂封 裝體110的切割之前,必須進行機械性地從引線架將樹脂 封裝體剝下之工序。另外’在—片引線架形成有多數個樹 脂封裝體H0之情況,使複數個樹脂封裝體11〇從引線架 分離後’還必須-個-個地使樹脂封裝體貼著於切判片 (dicing sheet)之工序。因為進行這樣的工序,而有製造 工序變得繁雜,製造成本上昇之問題。 本發明係鑑於上述的問題而完成者,本發明之主要的 =的在提供使有效率地製造多數個電料置成為可能之引 線架及使用該引線架的電路裝置之製造方法。 (解決課題之手段) j發明之引線架,係配置有由島部(isiand)及鄰接为 =述島部之複數條引線所構成之單元(unit),且前述單; 邊部之框狀的支持部予以機械性地支持之弓N 特徵在於:在與崎於前述單元相互的交界之分! -部份之貫通孔或使前述貫,述支細 之半溝槽。 符錚的一部份的厚度變薄而¥ ^發^電路裝置之製造方法,具備有:準備引^ ==該引線架係配置有由島部及鄰接於前⑽ 框狀的Γ v所構成之單70,且前述單元由設於周邊部: 框狀的核部予㈣械性地麵,並在_麟前述單; 320612 5 200939439 相互的父界之分tl線的延紐對應之前述切部,設有貫 .通前述支持部的一部份之貫通孔或使前述支持部的-部份 •的厚度變薄而成之半溝槽者;在前述各單元的前述島部固 接電路7L件’並將前述電路元件與前述引線予以電性連接 之彳U覆蓋構成前述單元之前述島部、前述引線及前 述電路元件之方式开;成密封樹脂之工序;以及使前述密封 樹脂在前述單元相互的交界分離,並使前述弓!線架之前述 ❹支持部在^置有前述貫通孔或前述半溝槽之處分離之工 W序。 (發明之效果) 〜 根據本發明,在與形成於内部之單元相互的交界線對 應之引線架的外框設置貫通孔或半溝槽。因而,即使在藉 由切割使各單元一個個分.離之工序中,同時分割引線架的 外框’也可在貫通孔或半溝槽形成的區域輕易地使外框分 離。所以’不需要如在先前技術中說明過之在切割之前使 0樹月曰封裝體從引線架分離再一個一個貼著於切割片。因 此,可簡化工序、降低製造成本。 【實施方式】 以下參照圖式說明本發明之引線架及使用該引線架的 電路裝置之製造方法。 首先,參照第1及第2圖說明引線架10的構成。此處 第1圖(A)係顯示引線架1〇全體之平面圖,第i圖③)係將 配置於引線架10之區塊(bl〇ck)12予以放大之平面圖'。第 2圖係顯示包含於區塊12中之單元的構成之平面圖。 320612 6 200939439 參照第1圖⑴,引線架10係對於例如由厚度在〇 左右之銅等金屬所構成之導㈣,施行糊加工或衝壓加 工使之成形為預定的形狀_得者。引_1()係呈現 形的形狀,其平面的尺寸在例如縱χ橫,mmxi'4G随左右。、 另外’引線架10的表面覆蓋有使例如鎳、鈀、金依 層疊而成的錢覆膜。 引線架10配置有複數個相間隔而配置之由多數個單 7G所構成之區塊12。此處,係沿著㈣架1()的長邊方向 配置一列共五個區塊12,惟配置的區塊12的個數亦可為 一個或兩個,或者為六個以上之多數個。’ 區塊12的周邊部設有本身為未形成區塊的剩餘區 域之第-支持部14及第二支持部16,利用此第一支持部 14及第二支持部16構成全體地支持引線架1()之外框。第 支持4 14位在引線架1〇的長邊方向的兩個相向的周邊 第一支持16位在弓j線架1〇的短邊方向的兩個相向 ❹的周邊4。另外’第二支持部16亦設在各區塊12之間。 參照第1圖⑻,詳細說明設於引線架10巾之區塊12 的構成。區塊12㈣部’形成有配置成矩陣狀之複數個單 兀26。此處,單元26係構成一個電路裝置之單位元素。 就第1圖(B)而言,一個區塊12係設有5行”列共託個 單元26 ’不過亦可在區塊12設置更多個單元26。 第1圖(B)中,以虛線表示劃設於區塊12内部所設置 之各單元26相互之間之分割線。此處,因為單元26係配 置成矩陣狀,所以分割線係劃設成格子狀。分割線2〇係在 7 320612 200939439 紙面上劃設於縱方向,分割線18係在紙面上劃設於橫方 向。 分割線20係從引線架10的下端延伸劃設到上端,此 表示在電路裝置的製造工序中,係沿著分割線20從上端到 下端將引線架10切斷。 分割線18係從引線架10的左端連續劃設到右端,此 亦表示在電路裝置的製造工序中,係沿著分割線18從左端 到右端將引線架10切斷。另外,分割線18在設於引線架 ❹ 10之各區塊12係相連而劃設。換言之,在製造工序中, 沿著分割線18進行切割,就可一次進行複數個區塊12中 所包含的單元26之分割。 本發明中,為了容易進行與上述分割線18, 20對應處 之引線架10的切斷,而等間隔設置半溝槽22及貫通孔24。 半溝槽22係使與分割線20對應處之第一支持部14的 一部份形成得較薄之部位。半溝槽22係藉由對第一支持部 q 14進行例如0. 1 mm左右的半姓刻使厚度變薄而形成。以 此方式在劃設有分割線20之處設置半溝槽22’就可容易 地分割該部份的第一支持部14,所以可減低用於切割之切 割鑛(dicing saw)的磨耗。而且,半溝槽22並非貫通引線 架10之溝槽,因而抑制設置半溝槽22所造成之第一支持 部14的機械強度的降低。 貫通孔24係使劃設有分割線18之區域的第二支持部 16的一部份貫通而設置之部位。在設有貫通孔24之部位, 由於沒有構成引線架10之金屬材料存在,所以可容易地進 8 320612 200939439 行沿者分割線18切割之單元26的分割。而且,也抑制因 該切割而造成之切割鋸的磨耗。 此處’本形態係在短邊方向之第二支持部16設置貫通 引線架1〇之貫通孔24’在長邊方向之.第一支持部丨4’設置 並非貫通引線架10而是使一部份的厚度變薄而成之半溝 槽22。藉由將半溝槽22設置於長邊方向的第一支持部14, 使得第一支持部14的機械強度保持在預定強度以上,以抑 制引線架1〇在製造工序的中間階段發生撓曲或彎折。另 外’關於短邊方向的第二支持部16 ’則因為與第一支持部 • 14相比所要求的機械強度較低,所以可為了容易進行切割 而形成貫通引線架10之貧通孔2^ 此處,上述之半溝槽22及貫通孔24之寬度wi係在例 如0. 5賴至1. 0 mm程度。 此處,亦可在分割線20通過之部份的第一支持部14、 及分割線18通過之部份的第二支持部16雙方都設置半溝 〇槽22。另外,亦可在上述區域雙方都設置貫通孔24。 再者,在經分割線20劃分之各第一支持部14,形成 有貫通第一支持部14之圓形的貫通孔34。另外,在第二 夫持部16亦同樣設有貫通孔34。此貫通孔%係用來提高 在製造工序中塗佈的密封樹脂與引線架1〇的密著性者。 參照第2 ® ’制包含於上述㈣塊12中之單元的構 成。單元26係如上述為構成一個電路裝置之單位元素,在 此係由-個島部28、及以包圍該島部別的四方之方式配 置之複數個引線30所構成。 320612 9 200939439 各单元26相互之間有連結桿(tie bar)32形成為格子 狀。而且,各單元26的引線30係從連結桿32連續地向單 元26的内側延伸出來。另外,島部28係經由懸吊引線而 連結至連結桿32。 此外,各連結桿32的位置係與參照第1圖說明過的分 割線18,20正確地對應。因而,在製造工序中,在分割線 18,20進行切割.,就可將連結桿32去除。 另外,為了確實進行上述之去除,而使得連結桿32形 ® 成得較細,使其寬度W2在例如〇. 2 mm程度。亦即,連結 桿32的寬度W2係形成得比參照第1圖說明過之貫通孔% 及半溝槽22的寬度窄,而且形成得比在製造工序中使用之 切割刀片(dicing blade)的寬度窄。 接著,參照第3至第7圖說明使用上述構成之引線架 10的電路裝置之製造方法。 參照第3圖,首先,在引線架1〇的預定處固接半導體 ❹元件44。第3圖(A)係顯示一個單元26之平面圖,第3圖 (B)係顯不第3圖(A)之B-B’線的剖面圖。 在本工序,藉由衝壓加工或钱刻加工而準備如第1圖 所示構成之引線架10。然後,對於此引線架1〇之各區塊 12(參照第1圖)進行半導體元件44之晶粒接合(die. bonding)及打線接合(wire bonding)。在本工序,係對於 第1圖所示之配置於引線架10中的所有區塊一併進行晶粒 接合及打線接合。 參照第3圖(A),首先,透過焊材等導電性接著材料或 320612 200939439 環氧樹脂等絕緣性接著材料,將半導體元件4 4安裝在島部 28的上面。然後’利用金屬細線46來連接設在半導體_ 件44上面之電極與引線30。 疋 參照第3圖(β) ’在本工序,使引線架1〇的下表面 乎全面地貼著在接著片48的上面。接著片48係上面薄薄 地塗佈有接著樹脂之樹脂製的薄片,其材料可採用例如聚 酿亞胺或 PET(P〇lyethylene Terephthalate :聚對笨二 ❾酸乙二酯)。將引線架10的背面黏貼在接著片48上<: 由,係為了在接下來的樹脂密封工序中,防止密封樹脂涔 到引線架ίο的背面。 參照第4及第5圖,接著,以覆蓋第3圖所示之島部 28、引線30、金屬細線46及半導體元件44之方式形成密 封樹脂36 〇 參照第4圖(A) ’在本工序,使用由上模具52及下模 具54所構成之成型模具50進行樹脂密封。在本工序,採 〇 用使用環氧樹脂等熱硬化性樹脂之轉注成型(transfer molding)或使用聚乙烯等熱可塑性樹脂之射出成型 (injection molding)。 在本工序,將下面貼著有接著片48之引線架1〇載置 在下模具54之平坦的上表面,再使上模具52與下模具54 相抵接,藉此使各區塊12都收納在—個模穴56内而進行 樹脂密封。 模具50係由上模具52及下模具54所構成,且在與區 塊12的周邊部對應之區域設有注入口 6〇,在與注入口 60 320612 11 200939439 相向之區塊12的周邊部形成有排氣口 58t>經由注入口 6〇 將液狀或半m態狀的密封樹難人模穴。於是,與從注 入口 ;主入之岔封樹脂相對應量之模穴π内的空氣,經 由排氣口 58而排放到外部。 ΟHowever, in the above-described method of manufacturing a semiconductor device, it is necessary to mechanically peel the resin package from the lead frame before cutting the resin package 110. In addition, in the case where a plurality of resin packages H0 are formed on the lead frame, after the plurality of resin packages 11 are separated from the lead frame, the resin package must be attached to the dicing sheet. Sheet) process. Because of such a process, there are problems in that the manufacturing process becomes complicated and the manufacturing cost rises. The present invention has been made in view of the above problems, and a main method of the present invention is to provide a lead frame capable of efficiently manufacturing a plurality of electric materials and a method of manufacturing a circuit device using the lead frame. (Means for Solving the Problem) The lead frame of the invention includes a unit composed of an island portion (isiand) and a plurality of leads adjacent to the island portion, and the unit is single; the side portion is frame-shaped. The bow N that is mechanically supported by the support portion is characterized by: a boundary with the intersection of the above-mentioned units! - a part of the through hole or the above-mentioned half, a thin half groove. A method for manufacturing a circuit device in which the thickness of a portion of the symbol is reduced is: a preparation method is provided: === The lead frame is arranged with an island portion and a frame ν adjacent to the front (10) The single 70, and the above-mentioned unit is provided in the peripheral portion: the frame-shaped core portion is given to the (four) mechanical ground, and is in the above-mentioned single; 320612 5 200939439 mutual parental division tl line extension corresponding to the aforementioned cut a portion having a through hole passing through the support portion or a half groove formed by thinning a thickness of the portion of the support portion; the island portion fixing circuit in each of the foregoing units a 7L piece ' electrically connecting the circuit element and the lead wire to cover the island portion, the lead wire and the circuit element constituting the unit; forming a sealing resin; and making the sealing resin in the foregoing The junctions of the units are separated from each other, and the aforementioned support portion of the bow frame is separated from the through hole or the half groove. (Effect of the Invention) According to the present invention, a through hole or a half groove is provided in the outer frame of the lead frame corresponding to the boundary line between the cells formed inside. Therefore, even in the process of dividing the respective units one by one by cutting, the outer frame ' of the lead frame can be simultaneously separated, and the outer frame can be easily separated in the region where the through holes or the half grooves are formed. Therefore, it is not necessary to separate the 0-tree enamel package from the lead frame and stick to the dicing sheet one by one before cutting as explained in the prior art. Therefore, the process can be simplified and the manufacturing cost can be reduced. [Embodiment] Hereinafter, a lead frame of the present invention and a method of manufacturing a circuit device using the lead frame will be described with reference to the drawings. First, the configuration of the lead frame 10 will be described with reference to the first and second figures. Here, Fig. 1(A) shows a plan view of the entire lead frame 1b, and Fig. 3(3) shows a plan view 'enlarged by a block (bl〇ck) 12 disposed on the lead frame 10. Fig. 2 is a plan view showing the constitution of the unit included in the block 12. 320612 6 200939439 Referring to Fig. 1 (1), the lead frame 10 is formed by forming a predetermined shape into a guide (4) made of a metal such as copper having a thickness of about 〇, for example, by paste processing or press working. The index_1() is in the shape of a shape whose plane size is, for example, vertical and horizontal, and mmxi'4G is left and right. Further, the surface of the lead frame 10 is covered with a money film in which, for example, nickel, palladium, and gold are laminated. The lead frame 10 is provided with a plurality of blocks 12 composed of a plurality of single 7Gs arranged at intervals. Here, a total of five blocks 12 are arranged along the longitudinal direction of the (four) shelf 1 (), but the number of the blocks 12 to be arranged may be one or two, or a plurality of six or more. The peripheral portion of the block 12 is provided with a first support portion 14 and a second support portion 16 which are the remaining regions in which the block is not formed, and the first support portion 14 and the second support portion 16 constitute the entire support lead frame. 1 () outside the box. The first support 14 positions are two opposite sides in the longitudinal direction of the lead frame 1 第一. The first support 16 is at the periphery 4 of the two opposite sides of the short side of the bow j frame 1 。. Further, the second support portion 16 is also provided between the respective blocks 12. The configuration of the block 12 provided in the lead frame 10 will be described in detail with reference to Fig. 1 (8). The block 12 (four) portion ' is formed with a plurality of cells 26 arranged in a matrix. Here, unit 26 constitutes a unit element of a circuit device. In the case of Fig. 1(B), one block 12 is provided with 5 rows of columns, and a plurality of cells 26 can be provided in block 12. In Fig. 1(B), The broken line indicates the dividing line between the units 26 disposed inside the block 12. Here, since the units 26 are arranged in a matrix, the dividing lines are arranged in a lattice shape. The dividing line 2 is tied to 7 320612 200939439 The paper surface is drawn in the longitudinal direction, and the dividing line 18 is arranged on the paper surface in the lateral direction. The dividing line 20 is extended from the lower end of the lead frame 10 to the upper end, which means that in the manufacturing process of the circuit device, The lead frame 10 is cut from the upper end to the lower end along the dividing line 20. The dividing line 18 is continuously drawn from the left end of the lead frame 10 to the right end, which also means that along the dividing line 18 in the manufacturing process of the circuit device. The lead frame 10 is cut from the left end to the right end. Further, the dividing line 18 is connected to each of the blocks 12 provided in the lead frame 10, in other words, in the manufacturing process, cutting is performed along the dividing line 18. The division of the unit 26 included in the plurality of blocks 12 can be performed at one time. In the present invention, in order to facilitate the cutting of the lead frame 10 corresponding to the dividing lines 18 and 20, the half grooves 22 and the through holes 24 are provided at equal intervals. The half grooves 22 are corresponding to the dividing line 20. A portion of the first support portion 14 is formed to be thinner. The half groove 22 is formed by thinning the thickness of the first support portion q 14 by, for example, about 0.1 mm. In the manner in which the half groove 22' is provided at the division line 20, the first support portion 14 of the portion can be easily divided, so that the wear of the dicing saw for cutting can be reduced. The groove 22 does not penetrate the groove of the lead frame 10, thereby suppressing the decrease in the mechanical strength of the first support portion 14 caused by the provision of the half groove 22. The through hole 24 is a second support for the area where the dividing line 18 is drawn. A portion of the portion 16 that is penetrated and provided. In the portion where the through hole 24 is provided, since the metal material constituting the lead frame 10 is not present, the unit 26 which is cut along the dividing line 18 can be easily inserted into the 8 320612 200939439 line. Segmentation. Moreover, it also inhibits the cutting The wear of the saw is here. In this embodiment, the second support portion 16 in the short-side direction is provided with the through hole 24' passing through the lead frame 1'' in the longitudinal direction. The first support portion 丨4' is not provided through the lead frame. 10 is a half-groove 22 which is made thin by a part of the thickness. By placing the half groove 22 in the longitudinal direction of the first support portion 14, the mechanical strength of the first support portion 14 is kept at a predetermined time. In addition to the strength, the lead frame 1 is prevented from being bent or bent at an intermediate stage in the manufacturing process. Further, the second support portion 16' in the short-side direction is required to be mechanically compared with the first support portion 14 5 至至1. 0毫米。 The thickness of the slabs of degree. Here, the half groove groove 22 may be provided in both the first support portion 14 through which the dividing line 20 passes and the second support portion 16 through which the dividing line 18 passes. Further, the through holes 24 may be provided in both of the above regions. Further, a circular through hole 34 penetrating the first support portion 14 is formed in each of the first support portions 14 divided by the dividing line 20. Further, a through hole 34 is also provided in the second grip portion 16. This through-hole % is used to improve the adhesion of the sealing resin applied to the lead frame 1 in the manufacturing process. Refer to the construction of the unit included in the (4) block 12 of the 2nd ′′ system. The unit 26 is a unit element constituting one circuit device as described above, and is composed of an island portion 28 and a plurality of lead wires 30 arranged to surround the four sides of the island portion. 320612 9 200939439 Each unit 26 has a tie bar 32 formed in a lattice shape. Further, the lead wires 30 of the respective units 26 are continuously extended from the connecting rod 32 to the inner side of the unit 26. Further, the island portion 28 is coupled to the connecting rod 32 via a suspension lead. Further, the position of each of the connecting rods 32 correctly corresponds to the dividing lines 18, 20 described with reference to Fig. 1 . Therefore, in the manufacturing process, the dividing line 18, 20 is cut, and the connecting rod 32 can be removed. Further, in order to surely perform the above-described removal, the connecting rod 32 is formed to be thinner so that the width W2 is, for example, about 2 mm. That is, the width W2 of the connecting rod 32 is formed to be narrower than the width of the through hole % and the half groove 22 described with reference to Fig. 1, and is formed to be wider than the width of the dicing blade used in the manufacturing process. narrow. Next, a method of manufacturing the circuit device using the lead frame 10 having the above configuration will be described with reference to Figs. 3 to 7. Referring to Fig. 3, first, the semiconductor germanium element 44 is fixed at a predetermined portion of the lead frame 1A. Fig. 3(A) shows a plan view of one unit 26, and Fig. 3(B) shows a cross-sectional view taken along line B-B' of Fig. 3(A). In this step, the lead frame 10 constructed as shown in Fig. 1 is prepared by press working or money carving. Then, die bonding and wire bonding of the semiconductor element 44 are performed for each of the blocks 12 of the lead frame 1 (see Fig. 1). In this step, all the blocks arranged in the lead frame 10 shown in Fig. 1 are subjected to die bonding and wire bonding. Referring to Fig. 3(A), first, the semiconductor element 4 4 is mounted on the upper surface of the island portion 28 via a conductive adhesive material such as a solder material or an insulating adhesive material such as 320612 200939439 epoxy resin. Then, the metal thin wires 46 are used to connect the electrodes and the leads 30 provided on the semiconductor element 44.疋 Referring to Fig. 3 (β) ′, in this step, the lower surface of the lead frame 1 全面 is entirely adhered to the upper surface of the bonding sheet 48. Next, the sheet 48 is thinly coated with a resin-made sheet of a resin, and the material thereof may be, for example, polyimine or PET (P-lyethylene Terephthalate). The back surface of the lead frame 10 is adhered to the back sheet 48. In order to prevent the sealing resin from being rubbed onto the back surface of the lead frame in the subsequent resin sealing step. Referring to the fourth and fifth figures, the sealing resin 36 is formed so as to cover the island portion 28, the lead wires 30, the thin metal wires 46, and the semiconductor element 44 shown in Fig. 3, and the process is referred to in Fig. 4(A). The resin mold is sealed using a molding die 50 composed of an upper mold 52 and a lower mold 54. In this step, transfer molding using a thermosetting resin such as an epoxy resin or injection molding using a thermoplastic resin such as polyethylene is used. In this step, the lead frame 1A having the adhesive sheet 48 attached thereto is placed on the flat upper surface of the lower mold 54, and the upper mold 52 and the lower mold 54 are brought into contact with each other, whereby the respective blocks 12 are accommodated. A resin cavity is sealed in a cavity 56. The mold 50 is composed of an upper mold 52 and a lower mold 54, and an injection port 6 is provided in a region corresponding to the peripheral portion of the block 12, and is formed at a peripheral portion of the block 12 facing the injection port 60 320612 11 200939439. There is a vent 58t> a liquid or semi-m-state sealing tree is difficult to mold through the injection port 6〇. Then, the air in the cavity π corresponding to the amount of the sealing resin from the injection port is discharged to the outside through the exhaust port 58. Ο

此外本工序中,係藉由上模具52及下模具54將區 塊12周圍之引線架1〇的剩餘部(第1圖(八)中所示之第一 支持部14及第二支持部16)按壓*。而且,在本工序,引 線架10的下面貼著有接著片48。因此,即使以高壓將密 封樹脂注人模穴56,也可抑制注人的密封樹脂漫到引線架 10的下面。另外’參照第3圖⑻引線架W的下面係作 為連接端子而對應於露出到外部之島部28及引線3〇的下 面。由此可知,若引線架1G的下面為密封樹脂所覆蓋’就 難以使島部28及引線30與外部連接。本形態中,因為採 用上述的接著片48來防止密封_旨_引_ H)的下 面,所以島部28及引線3G的下面會良好地露出到外部。 第4圖⑻中顯示上述工序結束後之引線架1〇的平面 圖。此處,各區塊12係個別地為密封樹脂36所密封。 夂參照第5圖,詳細說明上述的樹脂密封工序結束後的 = 5 _從附著有密封樹_方 =引線架1。所見之平面圖,第5圖⑻係 引線架10的平面圖。 參照第5圖(A),密封樹脂36 # 12形成之區域,而且覆蓋區塊12的周邊部之第一H 14及第二支持部16的表面。這樣做會使得引線㈣之; 320612 12 200939439 於第一支持部14的半溝样r 孔24中料有㈣樹/3622=於第二紐部16的貫通 捭部um Γ 充填進去。另外,貫通第一支 持4 14及第一支持部16而讯士 + 2 脂36充填進去。 《之貝通孔34中也會有密封樹 參照第5圖(b ),开彡士、从= 36的一部份會在引線架=^線,的上面之密封樹脂 充填進貫通孔24及貫通孔34、背面路出。具體而言’上述 m I孔34中之密封樹脂36會在引線架 ❹ Ο 所以右魅_ +暴槽22,則因為未貫通引線架10, 、。之密封樹月旨36不會在引線架1〇的下面露 ®。 參照第6及第7圖,接著,使上述之各區塊12的單元 示Π:?”第6圖係顯不切割的工序之圖,第7圖係顯 '、將&塊12为離成一個個的狀態之圖。 參照第6圖,首先在本工序,將 架1〇貼著在切割片42上。切割片^月^、封完成之引鍊 之樹脂片’其周圍由將不錢鋼等金屬开^形成有接著層 樞38加以支持。 /成為圓環狀之金屬 在上述構成之切割片42的上表面壯 前-工序中’曾在引線架10的下面貼著:線架10。在 3圖⑻),此處可先將該接著片48去除,^片48(參照第 架10 -起貼著在切割片42上。另外,力直接和引線 成有密封樹脂36之面貼著於切割片42,木1〇可用其形 密封樹脂36之面相反的另-面貼著於切割::『與形成有 本工序之切割’係進行至使各區塊 ^之密封樹脂36 320612 13 200939439 及引線架ίο完全分離之深度。 使引線架10貼著於切割片42之後,使用高速旋轉之 切割刀片40 —併切割所有形成於引線架10之各區塊12。 本工序中,不僅切割各區塊12之密封樹脂36,而且也藉 切割而分割由金屬所構成之引線架10的外框(支持部)。 具體而言,係藉由在紙面上的横方向進行切割,使形 成於引線架10之所有區塊12在橫方向分離,並分割引線 架10之短邊方向的支持部,亦即第二支持部16。另外, ® 藉由在紙面上的縱方向進行切割,而在縱方向分割各區塊 12,並分割引線架10之長邊方向的支持部,亦即第一支持 部14 〇 參照第7圖,詳細說明上述的切割。首先,在藉由密 封樹脂36而封裝成一體之一個區塊12,配置有多數個排 成矩陣狀之單元26。而且,在各單元26相互之間劃設有 呈格子狀之分割線。此處,在紙面上的橫方向劃設有分割 q 線18,在紙面上的縱方向劃設有分割線20。 此外,沿著分割線18形成有貫通引線架10的第二支 持部16而設之貫通孔24。而且,在形成該貫通孔24之處, 構成引線架10之金屬材料已遭去除,只有密封樹脂36存 在。此處,構成引線架10之銅等金屬材料,係為較環氧樹 脂等所構成之密封樹脂36難切斷之材料。因此,設置貫通 孔24,會減少沿著分割線18進行切割時切割刀片40所要 切斷的金屬材料。藉此,抑制伴隨著切割而造成之切割刀 片40的磨耗。 14 320612 〇 〇 200939439 另一方面,沿著劃設於紙面上縱方 有使引線㈣的第一支持部14的;‘害 之半溝槽22。而且, :的厚度㈣而成 區域容易造行切割刀片40的切割之條件,具有比其他 設有分割線20的部份設 ^ ®此’藉由在劃 使密封樹脂36及第—支 U,抑制沿著分割線別 磨耗。 支持^ 14分離之際之切割刀片㈣ 另外,參照第7圖(β), 20進行上述的切割,去除位在/著:割線18及分割線 云除位在各早兀26相互之門的毺钍 样32。因此,藉由本 _年目互之間的連結 立電性分離。而且,使32 ’使各單元_ 部別也電性分離。在各早疋26内部之引線30及島 如上所述,在本工疼, 金J材料的量減少而設有貫通構槽24 3 :所要::的 =::=2:rr 心二 切割刀片40的寬度為寬較理想。另外,連結产32 係形成得比切割刀片4〇的寬度窄。 于、寬又 藉由以上的工序,製造以樹腊將半導體元件封茫起來 而成之電路裝置。 釕裝起來 =照第8圖’接著說明以上述工序製造之電路裝置⑽ 的構成。第8圖U)係從上方看安裳狀態的電路 見之斜視圖,第8圖(B)係從下方看# 2所 所見之斜視圖。 方看妓態的電路裝置62 320612 15 200939439 參照第8圖(A),電路裝置62的外形形狀為薄形的六 面體,舉一個具體的尺寸的例子來說,縱X橫X厚係在5 mm x5 mmxO. 4 mm程度。電路裝置62的外面的大部份係由密 封樹脂36所構成。而且,引線30的端部在密封樹脂36的 侧面露出,且密封樹脂36的側面與引線30的露出面係位 在同一平面上。 參照第8圖(B),島部28在電路裝置62的上表面(安 裝的面)的中央部露出,複數個引線30在包圍該島部28的 四方之位置露出。如同之前在製造法的說明中說明過的, 島部28為用來安裝半導體元件的部位,引線30係透過金 屬細線與半導體元件的電極電性連接。 參照第8圖(C),島部28與引線30的下表面係比密封 樹脂36的下表面向内側(上方)凹陷而露出。島部28與引 線30的下表面比密封樹脂36的下表面向内侧(上方)凹陷 的距離W3,係在例如1 // m至2 /z m程度。 將上述構成之電路裝置62安裝在安裝基板等時,係使 焊材等之焊材熔接於從電路裝置62的安裝面(第8圖(B) 所示之上面)露出之引線30。 本實施形態係如第6圖所示,使引線架10本身貼著於 切割片42而進行上述之切割工序。藉此,就可一併將構成 於一個引線架中之複數個區塊12有效率地分離成各單 元。如上所述,在先前技術中,引線架10中構成有複數個 由多數單元所構成的區塊12之情況,係使區塊12從引線 架10分離後將區塊12貼著於切割片42。然而,在此情況 16 320612 200939439 進灯使區塊12從引線架1G分離之工序、以及個別地使分 離,各區塊12貼著於切割片42之工序,就會使製造成本 上=。為了抑制這種情形,本實施形態並不使區塊12從引 線架10分離,而使引線架10本身貼著於切割片42。然後, 等各區塊12的密封樹脂36與引線架一併切斷。這掾做就 不需要使區塊12從引線架10分離以及將各個區塊12貼著 至切割片42。因而’使將區塊12分割成個別的電路裝置 ❹之I序簡化’使製造成本降低。1 此外’參照第7圖(A),本實施形態為了有效率地進行 引線架10之切割,而在與分割線對應之區域設置半溝槽 22或貫通孔24。如上所述,半溝槽22及貫通孔24#沿著 接受切割之分割線18, 20而設置。因此,由於設置半溝槽 22及貫通孔24會削減切割刀片40所要切斷之引線架10 的區域’所以可抑制切割引線架10所造成之切割刀片40 的磨耗。 〇 另外,參照第7圖(A),引線架10的第一支持部14及 第二支持部16 ’設有呈圓形貫通這些支持部的部位之貫通 孔34°而且,貫通孔34中充填有密封樹脂36。如此構成, 會提南各支持部與密封樹脂36的密著強度。因此,即使藉 由切割來切斷覆蓋於第一支持部Η及第二支持部16之密 封樹月曰36 ’雄、封樹腊36也會堅固地固著於兩支持部上形 成的貫通孔34,所以可防止分離後的密封樹脂36發生剝 離。分離後的密封樹脂36從引線架1〇剝離,剝離的密封 樹脂36就會與切割刀片4〇接觸,而有切割刀片會破損 17 320612 200939439 之虞。本實施形態則藉由在引線架10設置貫通孔34,使 密封樹脂36充填入該貫通孔34,而避免此切割刀片40破 損之虞。 【圖式簡單說明】 第1圖係顯示本發明的引線架之圖,(A)為平面圖,(B) 為放大之平面圖。. 第2圖係顯示本發明的引線架之平面圖。 第3圖係顯示本發明的電路裝置之製造方法之圖,(A) ® 為平面圖,(B)為剖面圖。 第4圖係顯示本發明的電路裝置之製造方法之圖,(A) _為剖面圖,(B)為平面圖。 第5圖係顯示本發明的電路裝置之製造方法之圖,(A) 為平面圖,(B)為平面圖。 第6圖係顯示本發明的電路裝置之製造方法之平面 圖。 @ 第7圖係顯示本發明的電路裝置之製造方法之圖,(A) 為平面圖,(B)為放大之平面圖。 第8圖係顯示以本發明的電路裝置之製造方法製造的 電路裝置之圖,(A)為斜視圖,(B)為斜視圖,(C)為剖面圖。 第9圖係顯示先前技術的電路裝置之製造方法之剖面 圖。 第10圖係顯示先前技術的電路裝置之製造方法之剖 面圖。 第11圖係顯示先前技術的電路裝置之製造方法之剖 18 320612 200939439 面圖。 【主要元件符號說明】Further, in this step, the remaining portion of the lead frame 1 around the block 12 by the upper mold 52 and the lower mold 54 (the first support portion 14 and the second support portion 16 shown in Fig. 1 (A)) ) Press *. Further, in this step, the adhesive sheet 48 is adhered to the lower surface of the lead frame 10. Therefore, even if the sealing resin is injected into the cavity 56 at a high pressure, it is possible to suppress the intrusion of the sealing resin from flowing under the lead frame 10. Further, referring to Fig. 3 (8), the lower surface of the lead frame W serves as a connection terminal corresponding to the lower surface of the island portion 28 and the lead wires 3 which are exposed to the outside. From this, it is understood that if the lower surface of the lead frame 1G is covered by the sealing resin, it is difficult to connect the island portion 28 and the lead wires 30 to the outside. In the present embodiment, since the above-mentioned adhesive sheet 48 is used to prevent the lower surface of the sealing member, the underside of the island portion 28 and the lead 3G is exposed to the outside. Fig. 4 (8) shows a plan view of the lead frame 1A after the end of the above process. Here, each of the blocks 12 is individually sealed by the sealing resin 36. Referring to Fig. 5, the following description will be given in detail of the above-mentioned resin sealing step = 5 _ from the sealing tree _ side = lead frame 1 . The plan view seen, Fig. 5 (8) is a plan view of the lead frame 10. Referring to Fig. 5(A), the region where the sealing resin 36#12 is formed covers the surface of the first H 14 and the second support portion 16 at the peripheral portion of the block 12. This will cause the lead (4); 320612 12 200939439 to be filled in the semi-groove r-hole 24 of the first support portion 14 with (4) tree / 3622 = through the through-portion um Γ of the second button portion 16. Further, the first support 4 14 and the first support portion 16 are passed through and the semaphore + 2 grease 36 is filled in. "The sealing hole tree in the shell hole 34 will also refer to Fig. 5 (b). The sealing resin from the top of the lead frame = ^ line will be filled into the through hole 24 and The through hole 34 and the back surface are out. Specifically, the sealing resin 36 in the above-mentioned m I hole 34 will be in the lead frame Ο Ο, so the right _ 暴 暴 22, because the lead frame 10 is not penetrated. The seal tree will not be exposed under the lead frame 1〇. Referring to Figures 6 and 7, next, the cells of each of the above blocks 12 are shown: "" Figure 6 shows a process of cutting without cutting, and Figure 7 shows the process of 'and' block 12 Referring to Fig. 6, first, in this process, the frame 1〇 is attached to the cutting piece 42. The cutting piece ^^^, the sealed resin piece of the finished chain is surrounded by The metal such as Qiangang is formed by the adhesion layer 38. The metal which is in the form of a ring is adhered to the lower surface of the lead frame 10 in the process of the upper surface of the above-prepared cutting piece 42: the wire frame 10. In Fig. 3 (8)), the backing sheet 48 may be removed first, and the sheet 48 (refer to the first frame 10 is attached to the cutting sheet 42. In addition, the force is directly and the lead is formed with the sealing resin 36). Adhered to the dicing sheet 42, the slats of the slats may be attached to the other side of the surface of the sealing resin 36 in the opposite direction: "the cutting formed with the present process" is performed until the sealing resin 36 of each of the blocks is formed. 320612 13 200939439 and the lead frame ίο the depth of complete separation. After the lead frame 10 is attached to the cutting piece 42, the cutting blade 40 is rotated at a high speed. And cutting all the blocks 12 formed in the lead frame 10. In this step, not only the sealing resin 36 of each block 12 but also the outer frame (support portion) of the lead frame 10 made of metal is cut by cutting. Specifically, by cutting in the lateral direction on the paper surface, all the blocks 12 formed on the lead frame 10 are separated in the lateral direction, and the support portion in the short-side direction of the lead frame 10 is divided, that is, The second support portion 16. Further, by cutting in the longitudinal direction on the paper surface, each of the blocks 12 is divided in the longitudinal direction, and the support portion in the longitudinal direction of the lead frame 10 is divided, that is, the first support portion 14 The above-described cutting will be described in detail with reference to Fig. 7. First, a plurality of cells 12 which are integrally packed in a matrix by a sealing resin 36 are disposed, and a plurality of cells 26 arranged in a matrix are disposed. A dividing line having a lattice shape is formed between the partitions. Here, a dividing q line 18 is formed in the horizontal direction on the paper surface, and a dividing line 20 is formed in the longitudinal direction on the paper surface. Further, a dividing line 20 is formed along the dividing line 18. Passing through the second support portion 16 of the lead frame 10 The through hole 24. Further, at the place where the through hole 24 is formed, the metal material constituting the lead frame 10 is removed, and only the sealing resin 36 exists. Here, the metal material such as copper constituting the lead frame 10 is made of epoxy. The sealing resin 36 made of a resin or the like is difficult to cut. Therefore, the provision of the through hole 24 reduces the metal material to be cut by the cutting blade 40 when cutting along the dividing line 18. Thereby, the cutting is prevented. The wear of the cutting blade 40. 14 320612 〇〇200939439 On the other hand, along the longitudinal direction of the paper, there is a semi-groove 22 of the first support portion 14 of the lead (4). Further, the thickness (4) of the region is easy to manufacture the cutting condition of the cutting blade 40, and has a portion which is disposed more than the other portion in which the dividing line 20 is provided by the sealing resin 36 and the first branch U. Suppress wear along the dividing line. Supporting the cutting blade at the time of separation of 14 (4) In addition, referring to Fig. 7 (β), 20, the above-mentioned cutting is performed, and the removal position is located at: the secant line 18 and the dividing line cloud are removed from the door of each of the early 兀26 Look like 32. Therefore, the separation of the electricity is separated by the connection between the _years. Further, 32 ’ is also electrically separated from each unit. In the lead wires 30 and the islands in the early morning 26, as described above, in the present work, the amount of the gold J material is reduced and the through-groove 24 3 is provided: the desired::=::=2:rr heart-cutting blade The width of 40 is ideal for width. Further, the joint production 32 is formed to be narrower than the width of the cutting blade 4A. In the above process, a circuit device in which a semiconductor element is sealed by a tree wax is manufactured by the above process. Mounting = The configuration of the circuit device (10) manufactured by the above steps will be described next with reference to Fig. 8 . Figure 8 U) shows the circuit of the Anchang state from above. See the oblique view. Figure 8 (B) shows the oblique view seen from #2 from below. Circuit device 62 320612 15 200939439 Referring to FIG. 8(A), the outer shape of the circuit device 62 is a thin hexahedron. For a specific size example, the vertical X and the X thickness are 5 mm x 5 mm x O. 4 mm. Most of the outer surface of the circuit device 62 is composed of a sealing resin 36. Further, the end portion of the lead wire 30 is exposed on the side surface of the sealing resin 36, and the side surface of the sealing resin 36 is in the same plane as the exposed surface of the lead wire 30. Referring to Fig. 8(B), the island portion 28 is exposed at the center portion of the upper surface (surface to be mounted) of the circuit device 62, and a plurality of lead wires 30 are exposed at positions surrounding the island portion 28. As previously described in the description of the manufacturing method, the island portion 28 is a portion for mounting a semiconductor element, and the lead wire 30 is electrically connected to the electrode of the semiconductor element through the metal thin wire. Referring to Fig. 8(C), the island portion 28 and the lower surface of the lead wire 30 are recessed and exposed from the lower surface of the sealing resin 36 toward the inner side (upper side). The distance W3 at which the lower surface of the island portion 28 and the lead wire 30 is recessed from the lower surface of the sealing resin 36 toward the inner side (upward) is, for example, about 1 // m to 2 /z m. When the circuit board 62 having the above-described configuration is mounted on a mounting board or the like, the solder material such as the solder material is welded to the lead wire 30 exposed from the mounting surface (the upper surface shown in Fig. 8(B)) of the circuit device 62. In the present embodiment, as shown in Fig. 6, the lead frame 10 itself is attached to the dicing sheet 42 to perform the above-described dicing step. Thereby, the plurality of blocks 12 formed in one lead frame can be efficiently separated into the cells. As described above, in the prior art, in the case where the plurality of blocks 12 composed of a plurality of cells are formed in the lead frame 10, the block 12 is separated from the lead frame 10 and the block 12 is attached to the cutting piece 42. . However, in this case, the process of separating the block 12 from the lead frame 1G and separately separating the blocks 12 from the cutting piece 42 in this case makes the manufacturing cost =. In order to suppress this, the present embodiment does not separate the block 12 from the lead frame 10, and the lead frame 10 itself is attached to the dicing sheet 42. Then, the sealing resin 36 of each block 12 is cut together with the lead frame. This does not require the block 12 to be detached from the lead frame 10 and the individual blocks 12 to be attached to the cutting blade 42. Thus, the division of the block 12 into individual circuit devices is simplified, and the manufacturing cost is lowered. Further, in the present embodiment, in order to efficiently cut the lead frame 10, the half groove 22 or the through hole 24 is provided in a region corresponding to the dividing line. As described above, the half groove 22 and the through hole 24# are provided along the dividing lines 18, 20 that receive the cutting. Therefore, since the provision of the half groove 22 and the through hole 24 reduces the area of the lead frame 10 to be cut by the cutting blade 40, the abrasion of the cutting blade 40 caused by the cutting of the lead frame 10 can be suppressed. Further, referring to Fig. 7(A), the first support portion 14 and the second support portion 16' of the lead frame 10 are provided with through holes 34 having a circular portion penetrating through the support portions, and the through holes 34 are filled. There is a sealing resin 36. According to this configuration, the adhesion strength between the respective support portions and the sealing resin 36 is increased. Therefore, even if the sealing tree cover 36' male and the sealing tree 36 covering the first support portion Η and the second support portion 16 are cut by cutting, the through hole formed by the two support portions is firmly fixed. 34, it is possible to prevent peeling of the sealing resin 36 after separation. The separated sealing resin 36 is peeled off from the lead frame 1〇, and the peeled sealing resin 36 comes into contact with the cutting blade 4, and the cutting blade is broken by 17 320612 200939439. In the present embodiment, by providing the through hole 34 in the lead frame 10, the sealing resin 36 is filled in the through hole 34, and the dicing blade 40 is prevented from being damaged. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a lead frame of the present invention, (A) is a plan view, and (B) is an enlarged plan view. Figure 2 is a plan view showing the lead frame of the present invention. Fig. 3 is a view showing a method of manufacturing the circuit device of the present invention, wherein (A) ® is a plan view and (B) is a cross-sectional view. Fig. 4 is a view showing a method of manufacturing the circuit device of the present invention, wherein (A) is a cross-sectional view and (B) is a plan view. Fig. 5 is a view showing a method of manufacturing the circuit device of the present invention, wherein (A) is a plan view and (B) is a plan view. Fig. 6 is a plan view showing a method of manufacturing the circuit device of the present invention. @ Fig. 7 is a view showing a method of manufacturing the circuit device of the present invention, (A) is a plan view, and (B) is an enlarged plan view. Fig. 8 is a view showing a circuit device manufactured by the method of manufacturing a circuit device of the present invention, wherein (A) is a perspective view, (B) is a perspective view, and (C) is a cross-sectional view. Figure 9 is a cross-sectional view showing a method of manufacturing a prior art circuit device. Fig. 10 is a cross-sectional view showing a method of manufacturing a prior art circuit device. Figure 11 is a cross-sectional view showing a manufacturing method of a prior art circuit device, in a section 18 320612 200939439. [Main component symbol description]

10 引線架 12 14 第一支持部 16 18 分割線 20 22 半溝槽 24 26 口口 .一 早兀 28 30 引線 32 34 貫通孔 36 38 金屬框 40 42 切割片 44 46 金屬細線 48 50 模具 52 54 下模具 56 58 排氣口 60 62 電路裝置 101 102 訊號連接用端子 103 104 半導體晶片 105 106 密封片 107 108 下模具 109 110 樹脂封裝體 區塊 第二支持部 分割線 貫通孔 島部 連結桿 密封樹脂 切割刀片 半導體元件 接著片 上模具 模穴 注入口 引線架 晶塾 金屬細線 上模具 模穴 19 32061210 lead frame 12 14 first support part 16 18 dividing line 20 22 half groove 24 26 mouth. one morning 兀 28 30 lead 32 34 through hole 36 38 metal frame 40 42 cutting piece 44 46 metal thin wire 48 50 mold 52 54 under Mold 56 58 Exhaust port 60 62 Circuit device 101 102 Signal connection terminal 103 104 Semiconductor wafer 105 106 sealing sheet 107 108 Lower mold 109 110 Resin package block Second support portion dividing line through hole Island connecting rod sealing resin cutting Blade semiconductor component followed by on-die mold cavity injection port lead frame wafer metal thin wire die cavity 19 320612

Claims (1)

200939439 七、申請專利範圍: 1. 一種引線架,係配置有由島部及鄰接於前述島部之複數 條引線所構成之單元,且前述單元由設於周邊部之框狀 的支持部予以機械性地支持之引線架,其特徵在於: 在與劃設於前述單元相互的交界之分割線的延長 線上對應之前述支持部,設有貫通前述支持部的一部份 之貫通孔或使前述支持部的一部份的厚度變薄而成之 半溝槽。 ® 2.如申請專利範圍第1項之引線架,其中, 前述支持部係由在長邊方向相對向之第一支持部 與在短邊方向相對向之第二支持部所構成, 且在前述第一支持部設置前述半溝槽,在前述第二 支持部設置前述貫通孔。 3. 如申請專利範圍第2項之引線架,其中, 配置成矩陣狀之前述單元所構成之區塊,係在前述 q 支持部所圍的區域配置複數個, 且前述區塊相互之間亦設有前述第二支持部。 4. 如申請專利範圍第1項之引線架,其中, 在前述單元相互之間,設有端部連結至前述支持 部,並且將鄰接的前述單元之前述引線及前述島部連結 成一體之連結桿, 且前述貫通孔或前述半溝槽的寬度,係形成得比前 述連結桿的寬度寬。 5. 如申請專利範圍第1項之引線架,其中, 20 320612 200939439 前述單元係在前述支持部所圍的區域配置成矩陣 狀, 且前述貫通孔或前述半溝槽係在前述支持部等間 隔設置。 6. —種電路裝置之製造方法,具備有: 準備引線架之工序,其中該引線架係配置有由島部 及鄰接於前述島部之複數條引線所構成之單元,且前述 單元由設於周邊部之框狀的支持部予以機械性地支 持,並在與劃設於前述單元相互的交界之分割線的延長 線上對應之前述支持部,設有貫通前述支持部的一部份 之貫通孔或使前述支持部的一部份的厚度變薄而成之 半溝槽者; 在前述各單元的前述島部固接電路元件,並將前述 電路元件與前述引線予以電性連接之工序; 以覆蓋構成前述單元之前述島部、前述引線及前述 電路元件之方式形成密封樹脂之工序;以及 使前述密封樹脂在前述單元相互的交界分離,並使 前述引線架之前述支持部在設置有前述貫通孔或前述 半溝槽之處分離之工序。 7. 如申請專利範圍第6項之電路裝置之製造方法,其中, 前述分離之工序,係在使前述引線架貼著於切割片之狀 態,藉由切割使前述單元連同前述引線架的前述支持部 分離。 21 320612200939439 VII. Patent application scope: 1. A lead frame is provided with a unit composed of an island portion and a plurality of leads adjacent to the island portion, and the unit is mechanically supported by a frame-shaped support portion provided at a peripheral portion. The lead frame that is supported by the support frame is provided with a through hole that penetrates a part of the support portion or the support is provided in the support portion corresponding to the extension line of the dividing line disposed at the boundary between the units. The thickness of a part of the part is thinned into a half groove. 2. The lead frame of claim 1, wherein the support portion is formed by a first support portion that faces in a longitudinal direction and a second support portion that faces in a short side direction, and The first support portion is provided with the half groove, and the through hole is provided in the second support portion. 3. The lead frame of claim 2, wherein the plurality of cells arranged in a matrix form are arranged in a plurality of areas surrounded by the q support portion, and the blocks are also adjacent to each other. The aforementioned second support portion is provided. 4. The lead frame of claim 1, wherein an end portion is coupled to the support portion between the units, and the lead wire of the adjacent unit and the island portion are integrally connected. The rod, and the width of the through hole or the half groove is formed to be wider than the width of the connecting rod. 5. The lead frame of claim 1, wherein: 20 320612 200939439 said unit is arranged in a matrix in a region surrounded by said support portion, and said through hole or said half groove is equally spaced at said support portion Settings. 6. A method of manufacturing a circuit device, comprising: a step of preparing a lead frame, wherein the lead frame is provided with a unit composed of an island portion and a plurality of leads adjacent to the island portion, and the unit is provided by The frame-shaped support portion of the peripheral portion is mechanically supported, and a through hole penetrating through a portion of the support portion is provided in the support portion corresponding to an extension line of a dividing line defined at a boundary between the units Or a half-groove formed by thinning a portion of the support portion; a step of fixing a circuit component to the island portion of each of the units, and electrically connecting the circuit component to the lead; a step of forming a sealing resin so as to cover the island portion, the lead wire, and the circuit element constituting the unit; and separating the sealing resin at a boundary between the units, and providing the support portion of the lead frame with the through-hole The step of separating the holes or the aforementioned half grooves. 7. The method of manufacturing a circuit device according to claim 6, wherein the separating step is performed by cutting the lead frame in a state in which the lead frame is attached to the dicing sheet, and the support of the unit together with the lead frame is performed by cutting. Separation. 21 320612
TW097146558A 2008-02-06 2008-12-01 Lead frame and manufacturing method of circuit device using the lead frame TW200939439A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008025930A JP5144294B2 (en) 2008-02-06 2008-02-06 Lead frame and method of manufacturing circuit device using the same

Publications (1)

Publication Number Publication Date
TW200939439A true TW200939439A (en) 2009-09-16

Family

ID=41071116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097146558A TW200939439A (en) 2008-02-06 2008-12-01 Lead frame and manufacturing method of circuit device using the lead frame

Country Status (3)

Country Link
JP (1) JP5144294B2 (en)
KR (1) KR20090086148A (en)
TW (1) TW200939439A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI800266B (en) * 2021-05-31 2023-04-21 日商Towa股份有限公司 Mold, resin molding device, and method for manufacturing resin molded product

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5215980B2 (en) * 2009-10-30 2013-06-19 株式会社三井ハイテック Manufacturing method of semiconductor device
JP5397195B2 (en) * 2009-12-02 2014-01-22 日立化成株式会社 Manufacturing method of substrate for mounting optical semiconductor element and manufacturing method of optical semiconductor device
JP5613463B2 (en) * 2010-06-03 2014-10-22 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
DE102015100025A1 (en) 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh leadframe
JP6924411B2 (en) * 2017-08-28 2021-08-25 大日本印刷株式会社 Manufacturing method of lead frame and semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077235A (en) * 1999-09-06 2001-03-23 Mitsui High Tec Inc Board for mounting semiconductor elements
JP3634757B2 (en) * 2001-02-02 2005-03-30 株式会社三井ハイテック Lead frame
JP3628971B2 (en) * 2001-02-15 2005-03-16 松下電器産業株式会社 Lead frame and method for manufacturing resin-encapsulated semiconductor device using the same
JP2007294715A (en) * 2006-04-26 2007-11-08 Renesas Technology Corp Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI800266B (en) * 2021-05-31 2023-04-21 日商Towa股份有限公司 Mold, resin molding device, and method for manufacturing resin molded product

Also Published As

Publication number Publication date
KR20090086148A (en) 2009-08-11
JP5144294B2 (en) 2013-02-13
JP2009188150A (en) 2009-08-20

Similar Documents

Publication Publication Date Title
KR101587561B1 (en) Integrated circuit package system with leadframe array
US9412684B2 (en) Top exposed semiconductor chip package
JP3819574B2 (en) Manufacturing method of semiconductor device
TW200818458A (en) Stackable packages for three-dimensional packaging of semiconductor dice
JPH11312706A (en) Resin encapsulating semiconductor device and its manufacture, and lead frame
JP2003037219A (en) Resin sealed semiconductor device and method for manufacturing the same
TWI274409B (en) Process for manufacturing sawing type leadless semiconductor packages
TW200939439A (en) Lead frame and manufacturing method of circuit device using the lead frame
JP4408475B2 (en) Semiconductor devices that do not use bonding wires
US8609467B2 (en) Lead frame and method for manufacturing circuit device using the same
JP2003174131A (en) Resin-sealed semiconductor device and method of manufacturing the same
US8697496B1 (en) Method of manufacture integrated circuit package
JP2003249604A (en) Resin-sealed semiconductor device and method of the same, lead frame used in resin-sealed semiconductor device, and semiconductor module device
US8829685B2 (en) Circuit device having funnel shaped lead and method for manufacturing the same
JP2016162964A (en) Semiconductor device manufacturing method and semiconductor device
JP5285289B2 (en) Circuit device and manufacturing method thereof
JP4979661B2 (en) Manufacturing method of semiconductor device
US20050098859A1 (en) Semiconductor device and fabrication method thereof
JP2000286375A (en) Semiconductor device
JP4162303B2 (en) Manufacturing method of semiconductor device
JP4215300B2 (en) Manufacturing method of semiconductor device
JP4362902B2 (en) Manufacturing method of resin-encapsulated semiconductor device
JP2022094480A (en) Semiconductor device
JP2002164496A (en) Semiconductor device and method for manufacturing the same
KR0184061B1 (en) Semiconductor package