KR20090084754A - 노광 장치 및 디바이스의 제조 방법 - Google Patents

노광 장치 및 디바이스의 제조 방법 Download PDF

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Publication number
KR20090084754A
KR20090084754A KR1020090007551A KR20090007551A KR20090084754A KR 20090084754 A KR20090084754 A KR 20090084754A KR 1020090007551 A KR1020090007551 A KR 1020090007551A KR 20090007551 A KR20090007551 A KR 20090007551A KR 20090084754 A KR20090084754 A KR 20090084754A
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KR
South Korea
Prior art keywords
pattern
substrate
stage
mask
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020090007551A
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English (en)
Korean (ko)
Inventor
즈또무 다께나까
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20090084754A publication Critical patent/KR20090084754A/ko
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090007551A 2008-01-31 2009-01-30 노광 장치 및 디바이스의 제조 방법 Abandoned KR20090084754A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008021648A JP5219534B2 (ja) 2008-01-31 2008-01-31 露光装置及びデバイスの製造方法
JPJP-P-2008-021648 2008-01-31

Publications (1)

Publication Number Publication Date
KR20090084754A true KR20090084754A (ko) 2009-08-05

Family

ID=40931331

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090007551A Abandoned KR20090084754A (ko) 2008-01-31 2009-01-30 노광 장치 및 디바이스의 제조 방법

Country Status (4)

Country Link
US (1) US8665416B2 (https=)
JP (1) JP5219534B2 (https=)
KR (1) KR20090084754A (https=)
TW (1) TW200947159A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5457767B2 (ja) * 2009-09-08 2014-04-02 キヤノン株式会社 露光装置およびデバイス製造方法
NL2008310A (en) * 2011-04-05 2012-10-08 Asml Netherlands Bv Lithographic method and assembly.
CN103383531B (zh) * 2012-05-02 2016-07-06 上海微电子装备有限公司 掩模对准装置及使用该装置的光刻设备
CN103424994B (zh) * 2012-05-25 2016-02-03 上海微电子装备有限公司 一种像方标记承载装置及制造该承载装置的方法
JP2017183298A (ja) * 2014-08-20 2017-10-05 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
NL2016625A (en) * 2015-04-20 2016-10-24 Asml Netherlands Bv Lithographic Method and Apparatus.
JP6762615B2 (ja) * 2017-03-21 2020-09-30 株式会社日立ハイテクサイエンス Ｉｃｐ発光分光分析装置
CN106933025B (zh) * 2017-05-10 2020-04-10 京东方科技集团股份有限公司 掩膜版及其组件、曝光机和检测测试窗口遮挡效果的方法
JP6926948B2 (ja) * 2017-10-27 2021-08-25 セイコーエプソン株式会社 プロジェクター、画像投写システム、及びプロジェクターの制御方法
US11592653B2 (en) * 2019-04-05 2023-02-28 Kla Corporation Automated focusing system for tracking specimen surface with a configurable focus offset
EP4109178A1 (en) * 2021-06-22 2022-12-28 ASML Netherlands B.V. Imaging system
JPWO2025141733A1 (https=) * 2023-12-26 2025-07-03

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US4888614A (en) * 1986-05-30 1989-12-19 Canon Kabushiki Kaisha Observation system for a projection exposure apparatus
JP3303436B2 (ja) 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
JP3326902B2 (ja) * 1993-09-10 2002-09-24 株式会社日立製作所 パターン検出方法及びパターン検出装置及びそれを用いた投影露光装置
JPH08264427A (ja) * 1995-03-23 1996-10-11 Nikon Corp アライメント方法及びその装置
JP3796368B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 投影露光装置
JP3796369B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 干渉計を搭載した投影露光装置
JP2001332490A (ja) 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
JP2002353099A (ja) 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP4803901B2 (ja) * 2001-05-22 2011-10-26 キヤノン株式会社 位置合わせ方法、露光装置、および半導体デバイス製造方法
JP2003197510A (ja) * 2001-12-27 2003-07-11 Nikon Corp 収差測定装置、収差測定方法、光学系、および、露光装置
JP2004128149A (ja) * 2002-10-01 2004-04-22 Nikon Corp 収差計測方法、露光方法及び露光装置
JP2004214552A (ja) * 2003-01-08 2004-07-29 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP4023347B2 (ja) * 2003-02-06 2007-12-19 ソニー株式会社 マスク処理装置、マスク処理方法、プログラム、およびマスク
JP4362862B2 (ja) * 2003-04-01 2009-11-11 株式会社ニコン ステージ装置及び露光装置
JP4478424B2 (ja) * 2003-09-29 2010-06-09 キヤノン株式会社 微細加工装置およびデバイスの製造方法
WO2005038885A1 (ja) * 2003-10-16 2005-04-28 Nikon Corporation 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
JP4630611B2 (ja) * 2004-09-01 2011-02-09 キヤノン株式会社 干渉計を備えた露光装置及び方法、並びに、デバイス製造方法
JP4769448B2 (ja) * 2004-10-08 2011-09-07 キヤノン株式会社 干渉計を備えた露光装置及びデバイス製造方法
JP2006196555A (ja) * 2005-01-11 2006-07-27 Nikon Corp 収差計測方法及び装置、並びに露光方法及び装置
JP2006313866A (ja) * 2005-05-09 2006-11-16 Canon Inc 露光装置及び方法
JP2007281003A (ja) * 2006-04-03 2007-10-25 Canon Inc 測定方法及び装置、並びに、露光装置

Also Published As

Publication number Publication date
JP2009182253A (ja) 2009-08-13
TW200947159A (en) 2009-11-16
US8665416B2 (en) 2014-03-04
US20090195764A1 (en) 2009-08-06
JP5219534B2 (ja) 2013-06-26

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