WO2005038885A1 - 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法 - Google Patents
光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法 Download PDFInfo
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- WO2005038885A1 WO2005038885A1 PCT/JP2004/015119 JP2004015119W WO2005038885A1 WO 2005038885 A1 WO2005038885 A1 WO 2005038885A1 JP 2004015119 W JP2004015119 W JP 2004015119W WO 2005038885 A1 WO2005038885 A1 WO 2005038885A1
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- optical system
- optical characteristic
- characteristic measuring
- wavefront
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
- G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
Definitions
- the present invention relates to an optical characteristic measuring apparatus and an optical characteristic measuring method, an exposure apparatus and an exposing method, and a device manufacturing method. More specifically, the present invention relates to a method in which light passing through a test optical system is received by a detector. Characteristic measuring device and optical characteristic measuring method for measuring the optical characteristics of a test optical system by using the same, an exposure device equipped with the optical characteristic measuring device, an exposure method using the optical characteristic measuring method, an exposure device, and an exposure method The present invention relates to a device manufacturing method using the device.
- a pattern formed on a mask or a reticle (hereinafter, collectively referred to as a “reticle”) is projected through a projection optical system.
- An exposure apparatus that transfers an image onto an object such as a wafer or a glass plate coated with a resist or the like (hereinafter, appropriately referred to as a “wafer”) is used.
- steppers step-and-repeat type reduction projection exposure apparatuses
- step-and-scan type scans that improve this stepper have recently been used.
- Sequentially moving projection exposure apparatuses such as die exposure apparatuses are mainly used.
- the optical characteristics of an optical system such as a projection optical system be measured with high accuracy.
- the imaging characteristics of the projection optical system low-order aberrations conventionally known as Seidel's five aberrations are calculated based on the printing result of the image of the measurement pattern or the measurement result of the spatial image of the measurement pattern.
- the wavefront aberration which is an overall aberration
- it has been relatively difficult to measure the wavefront aberration which is an overall aberration, as an imaging characteristic of a projection optical system that responds to the miniaturization of device patterns accompanying the high integration of semiconductor elements. More and more are being done.
- the wavefront aberration of the projection optical system slightly changes before and after the projection optical system is mounted on the body of the exposure apparatus.
- Various types of measurement devices are used to measure the wavefront aberration of the projection optical system in (state).
- a Shack-Hartmann type wavefront aberration measuring device using a microlens array is known! /.
- the principle of measuring wavefront aberration using this wavefront aberration measuring device is as follows. That is, a spherical wave generated from a pinhole lens formed on a reticle is made incident on a projection optical system, and light passing through the projection optical system is made incident on a wavefront aberration measuring instrument fixed to a wafer stage. Then, a wavefront of light on the pupil plane of the projection optical system is divided by a microlens array arranged near a conjugate plane of the pupil plane of the projection optical system, and the image of the pinhole is formed by each lens element constituting the microlens array. (Spot image) is formed on the imaging surface of the CCD. In this case, the wavefront aberration of the projection optical system can be calculated by performing a predetermined calculation based on the deviation of the position of each spot image from the reference point.
- a half mirror is provided inside the wavefront aberration measuring device.
- the light incident on the wavefront aberration measuring device is split by the half mirror, one of the split light beams is incident on the CCD via the microlens array, and the other is transmitted through the microlens array.
- a wavefront aberration measuring device configured to make the light incident on another CCD (pupil measurement CCD) instead (for example, see Patent Document 1).
- the half mirror has the following polarization characteristics.
- light reflected by the half mirror has a higher intensity of S-polarized light and weaker intensity of P-polarized light
- light transmitted through the half mirror has a lower intensity of S-polarized light and a stronger intensity of P-polarized light.
- the semi-transmissive film reflection film whose transmittance is zero
- the projection optical system (projection lens) has different aberrations depending on the polarization direction.
- the illumination light may be polarized.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2003-262948
- the present invention has been made in view of the above circumstances, and a first object of the present invention is to provide an optical characteristic measuring device and an optical characteristic measuring device capable of measuring the optical characteristics of a test optical system with high accuracy. It is to provide a method.
- a second object of the present invention is to provide an exposure apparatus and an exposure method capable of accurately transferring a pattern formed on a mask onto a photosensitive object.
- a third object of the present invention is to provide a device manufacturing method capable of improving the productivity of a micro device.
- an optical property measuring apparatus for measuring optical properties of an optical system to be inspected, the optical property measuring apparatus being capable of being inserted into and removed from an optical path of light passing through the optical system to be inspected.
- An optical system including a wavefront splitting optical element that splits the wavefront of the light passing through the test optical system at the time of insertion; and a ⁇ removal mechanism for inserting and removing the wavefront splitting optical element into and from the optical path;
- a detector that receives the light passing through the optical system and outputs a detection signal including information on optical characteristics of the test optical system.
- the wavefront splitting optical element is inserted into the optical path of the light passing through the optical system to be measured by the insertion / removal mechanism. It is separated from. Then, when the wavefront splitting optical element is inserted into the optical path, the wavefront splitting optical element The detected light is received by the detector via the wavefront splitting optical element, and a detection signal containing information on the optical characteristics of the optical system to be detected is output. In this case, since the wavefront of the light passing through the test optical system is split by the wavefront splitting optical element, the detector includes information regarding the optical characteristics of the test optical system related to each split wavefront. A signal is output.
- the detector In a state where the wavefront splitting optical element is separated from the optical path, light passing through the optical system to be detected is received by the detector without passing through the wavefront splitting optical element, and the light from the detector is detected by the detector. A detection signal containing information on the optical characteristics of the system is output. In this case, the detector outputs a detection signal including information on the optical characteristics of the test optical system related to the shape and position of the pupil plane of the test optical system.
- the light passing through the optical system to be detected is received by the detector that does not pass through the half mirror, and the optical characteristics obtained based on the detection signal of the detector power are transmitted to the half mirror.
- the measurement accuracy cannot be degraded by the existing polarization characteristics. Therefore, it is possible to measure the optical characteristics of the test optical system with high accuracy.
- the wavefront splitting optical element can be arranged at a position near a pupil conjugate plane of the test optical system.
- the wavefront splitting optical element is inserted into the optical path at a position near the pupil conjugate plane of the optical system to be measured.
- the wavefront splitting optical element may be a microlens array.
- the optical characteristic measuring device of the present invention may further include a processing device that performs a predetermined operation based on a detection signal from the detector to calculate an optical characteristic of the optical system to be measured. it can.
- the processing apparatus in a state where the wavefront splitting optical element is inserted into the optical path by the insertion / removal mechanism, the processing apparatus is configured to detect the optical system to be inspected based on a detection signal from the detector.
- the first optical characteristic can be calculated.
- the first optical characteristic can be a wavefront aberration of the optical system to be measured.
- the processing apparatus includes the insertion / removal mechanism, and the processing unit includes In a state where the surface division optical element is separated from the optical path, the second optical characteristic of the optical system to be measured can be calculated based on a detection signal from the detector.
- the second optical characteristic is an optical characteristic related to at least one of information on a position and a shape of a light source image on a pupil plane of the test optical system or a conjugate plane thereof. Can be.
- the second optical characteristic can be one of a numerical aperture and a coherence factor of an illumination optical system constituting the test optical system.
- an exposure apparatus for transferring a pattern formed on a mask onto a photosensitive object, wherein the illumination optical system illuminates the mask with illumination light; A projection optical system that projects the illumination light emitted from the mask onto the photosensitive object; an object stage that holds the photosensitive object and moves two-dimensionally; and the projection optical system becomes the test optical system.
- An optical characteristic measuring device of the present invention mounted on the object stage.
- the mask is illuminated with the illumination light from the illumination optical system, and the illumination light emitted by the mask is projected onto the photosensitive object by the projection optical system (that is, on the surface on which the photosensitive object is arranged). Project.
- the photosensitive object is placed on an object stage that holds it and moves two-dimensionally.
- the optical characteristic measuring device of the present invention is mounted on the object stage so that the projection optical system becomes the test optical system. For this reason, the illumination light from the illumination optical system is received by the optical characteristic measuring device via the projection optical system via the projection optical system with or without the mask, so that the illumination light including the projection optical system and the illumination optical system is received.
- At least a part of the optical characteristics of the optical analysis system can be measured with high accuracy using a so-called on-body. Therefore, the pattern formed on the mask can be accurately transferred onto the photosensitive object by performing the exposure after adjusting the projection optical system and the like based on the measurement result.
- the optical characteristic measuring device may be fixed to the object stage at all times. For example, at least a part of the optical characteristic measuring device is detachably attached to the object stage. It can be done.
- an optical property measuring method for measuring an optical property of a test optical system wherein a wavefront splitting optical element is provided in an optical path of light passing through the test optical system.
- the light that has passed through the optical system to be detected is received by the detector that does not pass through the half mirror, and the first information and the second information 2 information is detected. Therefore, the optical characteristics obtained based on the first information and the second information cannot be deteriorated in measurement accuracy due to the polarization characteristics existing in the half mirror. Therefore, it is possible to measure the optical characteristics of the test optical system with high accuracy.
- a step of executing the optical characteristic measuring method of the present invention and a step of forming a pattern on a photosensitive object using the projection optical system on which the optical characteristic measuring method is executed. And a step of transferring the image to a substrate.
- the optical characteristics of the projection optical system are measured with high accuracy. For this reason, it is possible to adjust the optical characteristics of the projection optical system, for example, based on the measurement results, and to transfer the pattern with high accuracy by transferring the pattern onto a photosensitive object using the projection optical system. Becomes possible.
- the present invention is still another aspect of the present invention is a device manufacturing method using the exposure apparatus or the exposure method of the invention.
- FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to one embodiment.
- FIG. 2 is a diagram schematically showing a configuration of a wavefront sensor of FIG. 1.
- FIG. 3 is a view for explaining a surface state of the marking plate of FIG. 2.
- FIG. 4 (A) is a front view of the wavefront splitting unit viewed from the ⁇ Y side to the + Y side.
- FIG. 4 (B) is a sectional view taken along the line BB in FIG. 4 (A).
- FIG. 5 is a simplified flowchart showing a processing algorithm of a main controller 20 during an exposure operation in the exposure apparatus of FIG. 1.
- FIG. 6 is a flowchart (No. 1) showing a process of step 102 in FIG.
- FIG. 7 is a flowchart (No. 2) showing a process of step 102 in FIG.
- FIG. 8 is a plan view showing an example of a measurement reticle.
- FIG. 9 (A) is a diagram showing an optical arrangement at the time of capturing a spot image in the embodiment.
- FIG. 9 (B) is a diagram showing an optical arrangement at the time of capturing a pupil image in the embodiment.
- FIG. 10 is a flowchart for explaining a device manufacturing method.
- FIG. 11 is a flowchart showing a detailed example of step 316 in FIG. 10.
- FIG. 1 schematically shows the entire configuration of an exposure apparatus 100 according to one embodiment.
- the exposure apparatus 100 is a step-and-scan type projection exposure apparatus.
- the exposure apparatus 100 includes an exposure apparatus main body 60 and a wavefront sensor 90.
- the exposure apparatus main body 60 is an illumination system including a light source 6 and an illumination optical system 12, a reticle stage RST holding a reticle R, a projection optical system PL, and an object stage on which a wafer W as a photosensitive object is placed. It is equipped with a main control device 20 for controlling the entire apparatus, including a wafer stage WST, an alignment detection system AS of an off-axis system, and a computer such as a workstation.
- an ArF excimer laser (output wavelength: 193 nm) is used here.
- the light source 6 is a pulse in the vacuum ultraviolet region such as an F laser (output wavelength: 157 nm).
- a light source that outputs light or a light source that outputs near-ultraviolet pulse light such as a KrF excimer laser (output wavelength: 248 nm) may be used.
- the light source 6 is actually composed of an illumination optical system 12, a reticle stage RST, and a projection optical system PL.
- the wafer matching unit is installed in a low-cleanness service room separate from the clean room in which the chamber (not shown) that houses the exposure apparatus main body 60, which has the same strength as the wafer stage WST, is installed. They are connected via a light transmission optical system (not shown) including at least a part of an optical axis adjustment optical system called (BMU).
- BMU optical axis adjustment optical system
- the illumination optical system 12 includes a beam shaping / illumination uniforming optical system 220 including a cylinder lens, a beam expander, and a zoom optical system (the deviation is not shown), an optical integrator (homogenizer) 222, and an illumination system.
- An aperture stop plate 224, a first relay lens 228A, a second relay lens 228B, a fixed reticle blind 230A, a movable reticle blind 230B, a mirror M for bending an optical path, a condenser lens 232, and the like are provided.
- the optical integrator 222 a fly-eye lens, an internal reflection type integrator (rod integrator), a diffractive optical element, or the like can be used, but in the present embodiment, a fly-eye lens is used. Hereinafter, it is also described as “fly-eye lens 222”.
- the beam shaping / illuminance uniforming optical system 220 is connected to a light transmitting optical system (not shown) via a light transmission window 217.
- the beam shaping / illumination uniformizing optical system 220 shapes the cross-sectional shape of the laser beam LB that is pulsed by the light source 6 and enters through the light transmission window 217, for example, using a cylinder lens or a beam expander. Then, the fly-eye lens 222 located on the exit end side inside the beam shaping illuminance uniforming optical system 220 illuminates the reticle R with a uniform illuminance distribution.
- a surface light source composed of a number of point light sources (light source images) is formed on the exit-side focal plane (substantially coincident with the pupil plane of the illumination optical system 12).
- the laser beam emitted from the secondary light source is hereinafter referred to as “illumination light IL”.
- An illumination system aperture stop plate 224 made of a disc-shaped member is arranged near the exit-side focal plane of the fly-eye lens 222.
- This illumination system aperture stop plate 224 has substantially equal angular intervals, For example, an aperture stop (normal stop) consisting of a normal circular aperture, an aperture stop consisting of a small circular aperture (small ⁇ stop) for reducing the ⁇ value, which is a coherence factor, and a ring-shaped aperture stop for annular illumination ( A ring aperture) and a modified aperture stop in which a plurality of apertures are eccentrically arranged for the modified light source method (only two of them are shown in FIG. 1) are arranged. .
- the illumination system aperture stop plate 224 is rotated by driving a drive device 240 such as a motor controlled by a control signal MLC from the main controller 20, and one of the aperture stops is placed on the optical path of the illumination light IL. This is selectively set, so that the shape and size of the secondary light source on the pupil plane (light amount distribution of illumination light) are limited to an annular zone, a small circle, a large circle, or a fourth circle.
- the aperture stop plate 224 is used to change the light quantity distribution (shape and size of the secondary light source) of the illumination light on the pupil plane of the illumination optical system 12, that is, the illumination condition of the reticle R.
- the intensity distribution of the illumination light or the incident angle range of the illumination light on the incident surface of the optical integrator (fly-eye lens) 222 is made variable to minimize the light loss associated with the above-mentioned changes in the illumination conditions. It is preferable to suppress.
- a plurality of diffractive optical elements which are disposed on the optical path of the illumination optical system 12 in a replaceable manner, can be moved along the optical axis of the illumination optical system 12
- An optical unit that includes at least one prism (conical prism, polyhedral prism, etc.) and at least one zoom optical system is placed between the light source 6 and the optical integrator (fly-eye lens) 222 can do.
- a relay optical system having a first relay lens 228 and a second relay lens 228 ⁇ with a fixed reticle blind 230 ⁇ and a movable reticle blind 230 ⁇ ⁇ interposed on the optical path of illumination light IL emitted from illumination system aperture stop plate 224. Is arranged.
- Fixed reticle blind 230 # is arranged on a plane slightly defocused from a conjugate plane with respect to the pattern plane of reticle R, and has a rectangular opening defining an illumination area on reticle R.
- a movable reticle blind 230 mm having a variable opening is arranged.
- Main control at the start and end of scanning exposure Under the control of the apparatus 20, by further restricting the illuminated area on the reticle R via the movable reticle blind 230B, exposure of unnecessary portions is prevented.
- a folding mirror that reflects the illumination light IL passing through the second relay lens 228B toward the reticle R. M is arranged, and a condenser lens 232 is arranged on the optical path of the illumination light IL behind the mirror M.
- the entrance surface of fly-eye lens 222, the arrangement surface of movable reticle blind 230B, and the pattern surface of reticle R are optically set to be conjugate to each other, and the exit-side focal plane of fly-eye lens 222 (The pupil plane of the illumination optical system 12) and the pupil plane of the projection optical system PL are set to be optically conjugate to each other.
- a laser beam LB pulsed from the light source 6 is incident on the beam shaping illuminance uniforming optical system 220 and has a sectional shape. Is shaped and enters the fly-eye lens 222. Thus, the above-described secondary light source is formed on the emission-side focal plane of the fly-eye lens 222.
- Illumination light IL that has also emitted the above secondary light source power passes through one of the aperture stops on illumination system aperture stop plate 224, passes through first relay lens 228A, fixed reticle blind 230A, and movable reticle blind. Pass through the 230B rectangular opening. After passing through the second relay lens 228B, the optical path is bent vertically downward by the mirror M, and passes through the condenser lens 232 to form a uniform illumination distribution on the rectangular illumination area on the reticle R held on the reticle stage RST. Light up.
- a reticle R force is fixed on the reticle stage RST by, for example, vacuum suction.
- the reticle stage RST can be finely driven in an XY plane perpendicular to the optical axis AX of the projection optical system PL by a reticle stage driving unit (not shown) which also has a linear motor and the like, and has a predetermined scanning direction (Y It can be driven at the specified scanning speed (axial direction).
- the position of the reticle stage RST within the stage movement plane is, for example, about 0.5 nm by a reticle laser interferometer (hereinafter, referred to as “reticle interferometer”) 16 via a movable mirror 15. Is always detected with a resolution of.
- the position information (or speed information) of the reticle stage RST from the reticle interferometer 16 is sent to the main controller 20, and the reticle stage driving unit based on the position information (or speed information).
- the reticle stage RST is moved via (not shown).
- the projection optical system PL is arranged below the reticle stage RST in FIG. 1, and the direction of the optical axis AX is the Z-axis direction.
- the projection optical system PL is, for example, a both-side telecentric reduction system, and includes a plurality of lens elements (not shown) having a common optical axis AX in the Z-axis direction.
- 8 of the projection optical system PL is, for example, 1Z4, 1/5, 1Z6, or the like. Therefore, as described above, when the illumination area on the reticle R is illuminated by the illumination light (exposure light) IL, the pattern formed on the reticle R is reduced by the projection optical system PL at the projection magnification ⁇ . The resulting image (partially inverted image) is projected and transferred to a slit-shaped exposure area on the wafer W having a surface coated with a resist (photosensitive agent).
- a specific lens element (for example, five predetermined lens elements) among the plurality of lens elements is independently movable.
- the movement of the specific lens element that is powerful is performed by driving elements such as three piezo elements provided for each specific lens element. That is, by individually driving these driving elements, a specific lens element can be independently translated in parallel along the optical axis ⁇ according to the displacement of each driving element, It is also possible to give a desired inclination to a plane perpendicular to ⁇ .
- the drive instruction signal for driving the drive elements is output by the imaging characteristic correction controller 251 based on the command MCD from the main control device 20, whereby the displacement of each drive element is changed. The amount is now controlled.
- the projection optical system PL configured in this manner, distortion, curvature of field, astigmatism, coma, or spherical aberration is controlled by the movement control of the lens element via the imaging characteristic correction controller 251 by the main controller 20. Aberrations and other aberrations (a type of optical characteristic) can be adjusted.
- the wafer stage WST is arranged on a base (not shown) below the projection optical system PL in FIG. 1, and a wafer holder 25 is mounted on an upper surface thereof.
- This wafer holder On the wafer 25, a wafer W is fixed by, for example, vacuum suction or the like.
- the wafer stage WST is moved in the scanning direction by a wafer stage driving unit 24 including a motor and the like.
- the wafer stage WST scans the wafer W relative to the reticle R in order to scan (scan) each shot area on the wafer W, and a scanning start position for exposing the next shot.
- the step 'and' scan operation of repeating the operation of moving to (acceleration start position) is executed.
- the position of the wafer stage WST in the XY plane is determined by a wafer laser interferometer (hereinafter, referred to as “wafer interferometer”) 18 through a movable mirror 17 with a resolution of, for example, about 0.5 nm. Always detected.
- the position information (or speed information) of wafer stage WST is sent to main controller 20, and main controller 20 drives wafer stage WST via wafer stage drive unit 24 based on the position information (or speed information). Perform control.
- the wafer stage WST is driven by the wafer stage drive unit 24 in the Z axis direction, the ⁇ X direction (rotation direction around the X axis: pitching direction), and the 0 y direction (rotation direction around the Y axis: rolling direction). Also, it is minutely driven in the 0 z direction (rotation direction around the Z axis: winging direction).
- a sensor mounting portion having a shape to which wavefront sensor 90 described later can be fitted is formed.
- the alignment detection system AS is arranged on a side surface of the projection optical system PL.
- an imaging type alignment sensor that detects a street line and a position detection mark (a fine alignment mark) formed on the wafer W is used as the alignment detection system AS.
- the detailed configuration of an alignment sensor similar to the alignment detection system AS is disclosed in, for example, Japanese Patent Application Laid-Open No. 9-219354 and US Pat. No. 5,859,707 corresponding thereto.
- the detection result by the alignment detection system AS is supplied to the main controller 20. To the extent permitted by national legislation in the designated country (or selected elected country) specified in this international application, the contents of this publication and the corresponding US patents will be incorporated by reference.
- the apparatus 100 shown in FIG. 1 has a focus detection system (oblique incidence type) for detecting the position in the Z-axis direction (optical axis AX direction) in and near the exposure area on the surface of the wafer W.
- a multi-point focus position detection system (21, 22) which is one of the focus detection systems), is provided.
- the detailed configuration of the multipoint focus position detection system (21, 22) is disclosed in, for example, Japanese Patent Application Laid-Open No. 6-283403 and US Patent No. 5,448,332 corresponding thereto.
- the detection result by the multipoint focus position detection system (21, 22) is supplied to the main controller 20.
- the disclosures in the above-mentioned gazettes and US patents are incorporated herein by reference.
- the wavefront sensor 90 As the wavefront sensor 90, a Shack-Hartmann wavefront sensor using a microlens array in a light receiving optical system is used. As shown in FIG. 2, the wavefront sensor 90 includes a casing 97 having an internal space having a substantially L-shaped YZ section, and a plurality of optical elements arranged in a predetermined positional relationship inside the casing 97. A light receiving optical system as an optical system composed of elements and a detector 95 arranged at the + Y side end inside the housing 97 are provided.
- the housing 97 also has an L-shaped section in the YZ section, a space formed inside, and a member having an opening at the top (the end surface on the + Z side).
- An opening 97 a having a circular shape in plan view at the top of the housing 97 is closed by a sign board 91.
- the marking plate 91 is made of, for example, a glass substrate as a base material and is positioned at the same height position (Z-axis direction position) as the surface of the wafer W fixed to the wafer holder 25 so as to be orthogonal to the optical axis AX1. They are located (see Figure 1).
- a light-shielding film also serving as a reflection film is formed by vapor deposition of a metal such as chromium.
- a circular opening 91a is formed in the center of the light-shielding film. In this case, the light shielding film blocks unnecessary light from the surroundings from entering the light receiving optical system when measuring the wavefront aberration of the projection optical system PL.
- the two-dimensional position detection mark 91b includes a line-and-space mark 91c formed along the Y-axis direction and a line-and-space mark 9Id formed along the X-axis direction. Combinations are employed. Note that the line and space marks 9lc and 91d can be detected by the above-described alignment detection system AS.
- the light receiving optical system includes a collimator lens 92 as an objective lens, a bending mirror 96, and a + Y of the bending mirror 96, which are sequentially arranged from top to bottom below a sign plate 91 inside the housing 97. It comprises a relay lens system 93 composed of a lens 93a and a lens 93b arranged sequentially on the side, and a microlens array 94 as a wavefront dividing optical element.
- the folding mirror 96 is attached to the housing 97 so as to be inclined at an angle of 45 °. The folding mirror 96 allows the collimator lens 92 to extend vertically downward through the opening 91a of the indicator plate 91 from above.
- the optical path of the light incident on the lens is bent toward the relay lens system 93.
- the collimator lens 92, the lens 93a, the lens 93b, and the like that constitute the light receiving optical system are fixed to the inside of the wall of the housing 97 via a holding member (not shown).
- the light that has entered the collimator lens 92 is converted into parallel light by the collimator lens 92, and then enters the microlens array 94 via the bending mirror 96 and the relay lens system 93.
- the microlens array 94 is held by a square frame-shaped holding member 82, and the microlens array 94 and the holding member 82 constitute a wavefront splitting unit 84. (See Figure 2).
- FIG. 4 (A) shows a front view of the wavefront splitting unit 84 as viewed from the Y side to the + Y side
- FIG. 4 (B) shows B—B in FIG. 4 (A).
- a sectional view taken along line B is shown.
- the holding member 82 also has a square frame-shaped member having an L-shaped cross section, and the inner peripheral end face forms a square opening 82a. Is formed.
- One end of a piston rod 86 is fixed to the upper end (+ Z side end) of the holding member 82.
- a piston (not shown) is provided at the other end of the piston rod 86, and the piston is housed in an air cylinder 88 shown in FIG.
- each of air pipes 72 and 74 is connected to the air cylinder 88 near the one end (upper end) and near the other end (lower end), respectively.
- the air cylinder 88 In this case, in the inside of the air cylinder 88, spaces defined by the piston and the inner wall of the air cylinder 88 are formed on one side (upper side) and the other side (lower side) of the piston.
- the air passage inside one air pipe 72 communicates with the space on one side of the piston, and the air passage inside the other air pipe 74 communicates with the piston. It is connected to the space on the other side.
- the other end of the one air pipe 72 is connected to the port A of the flow path switching valve 76 that also has a four-way valve force, and the other end of the other air pipe 74 is connected to the port B of the flow path switching valve 76. It is connected.
- One end of a pipe 62 having one end connected to the vacuum pump 78 is connected to port C of the flow path switching valve 76, and one end of a port D of the flow path switching valve 76 has an air supply mechanism 66 having a built-in compressor.
- the other end of the pipe 64 connected to is connected.
- the flow path switching valve 76 is controlled by the main controller 20 so that the first state in which port A and port C are connected and port B and port D are connected, and that port A and port D are connected. And switches between the second state in which port B and port C are connected.
- On / off (ONZOFF) of the vacuum pump 78 and on / off of the air supply mechanism 66 are also controlled by the main controller 20.
- the main controller 20 switches the flow path switching valve 76 to the second state, and turns on both the vacuum pump 78 and the air supply mechanism 66 (ON).
- the piston inside the air cylinder 88 is pushed down by a pressure difference between the two spaces inside the air cylinder 88 due to the pressure of the air to be sent and the negative pressure generated by the vacuum pump 78, whereby the wavefront splitting unit 84
- the first force for example, upper movement limit position
- the second position is set in advance as a position where the center of the microlens array 94 constituting the wavefront dividing unit 84 substantially coincides with the optical axis AX1. If this state is maintained after the wavefront splitting unit 84 has moved to the second position, the vacuum pump 78 and the air supply mechanism 66 may be kept on, but either of the vacuum pump 78 or the air supply mechanism 66 may be used. May be turned off (OFF).
- the main controller 20 switches the flow path switching valve 76 to the first state, and furthermore, the vacuum pump 78 and the air supply
- the mechanism 66 is turned on (when only one of the vacuum pump 78 and the air supply mechanism 66 is off, only the one that is off is turned on) to be sent from the air supply mechanism 66
- the piston inside the air cylinder 88 is pushed up by the pressure difference between the two spaces inside the air cylinder 88 due to the air pressure and the negative pressure generated by the vacuum pump 78, and the wavefront splitting unit 84 is moved from the second position to the aforementioned position.
- Move to the first position (upper limit position) Evacuate from the optical path.
- the microlens array 94 as a wavefront splitting optical element is inserted into the optical path by the air cylinder 88, the flow path switching valve 76, the vacuum pump 78, and the air supply mechanism 66. And a detachment mechanism for detachment.
- a guide may be provided to guide the holding member 82.
- the microlens array 94 is configured by arranging a plurality of small lenses (microlenses) in an array on a plane orthogonal to the optical path. More specifically, as generally shown in FIGS. 4A and 4B, the microlens array 94 includes a large number of square microlenses 98 each having a side length D. Densely arranged in a matrix
- the micro lens 98 is a lens having a positive refractive power.
- the optical axes of the microlenses 98 are substantially parallel to each other.
- FIG. 4 (A) shows an example of the microlenses 98 arranged in a 7 ⁇ 7 matrix.
- Such a microlens array 94 is formed by performing an etching process on a parallel flat glass plate.
- the microlens array 94 emits, for each microlens 98, an image-forming light beam of an image via a pinhole pattern described later formed in an opening 91a of the sign board 91.
- the detector 95 includes a light receiving element (hereinafter, referred to as “CCD”) 95a composed of a two-dimensional CCD or the like, and an electric circuit 95b such as a charge transfer control circuit.
- the CCD 95a has an area sufficient to receive all of the light beams that enter the collimator lens 92 and exit from the microlens array 94.
- the CCD 95a is an image forming surface on which an image of a pinhole pattern described later formed in the opening 91a is re-imaged by each micro lens 98 of the micro lens array 94, It has a light receiving surface on the optical conjugate surface. In a state in which the light receiving surface is retracted from the above optical path, the light receiving surface is located on a surface slightly shifted from a conjugate plane of the pupil plane of the projection optical system PL.
- the detector 95 when the microlens array 94 is at the above-described second position, the imaging result of the image of the pinhole pattern re-imaged by each microlens 98 is taken as an imaging data. Data to the main controller 20 as data IMD1. In detector 95,
- the imaging result of the image formed on the light receiving surface is transmitted to the main controller 20 as imaging data IMD2.
- housing 97 is shaped to fit with the sensor mounting portion of wafer stage WST described above, and is detachable from wafer stage WST.
- the reticle mark on the reticle R and the mark of the reference mark plate are placed above the force reticle scale (not shown) via the projection optical system PL.
- a pair of reticle alignment systems that also have the power of a TTR (Through The Reticle) alignment optical system that uses the exposure wavelength for observation at the same time.
- TTR Through The Reticle
- these reticle alignment systems for example, those having the same configuration as those disclosed in Japanese Patent Application Laid-Open No. 7-176468 and corresponding US Pat. No. 5,646,413 are used.
- national legislation in the designated country (or selected elected country) specified in this international application the disclosures in the above-mentioned publications and corresponding US patents are hereby incorporated by reference.
- FIG. 5 shows a simplified processing algorithm of the main controller 20.
- the description will be made on the assumption that the exposure of the first layer on the wafer W has already been completed, and the exposure of the second layer and thereafter is performed. Further, as a premise of the following operation, it is assumed that the wavefront sensor 90 is mounted on the wafer stage WST and the wavefront sensor 90 is connected to the main controller 20 (end points c and d in FIG. 1). reference).
- the first mode and the second mode can be selected as the measurement modes of the wavefront aberration and the pupil image of the projection optical system PL. Therefore, it is assumed that the mode of the shift is selected.
- the pupil image refers to a light source image formed on a pupil plane of projection optical system PL by light incident on projection optical system PL via a pinhole pattern described later, and this pupil image is a wavefront. It is affected by the shift of the optical axis of the light incident on the sensor 90. Therefore, measurement of the pupil image is a type of measurement of the optical characteristics of the projection optical system PL.
- the wavefront aberration is one of the optical characteristics of the projection optical system PL. Further, it is assumed that the aberration of the light receiving optical system inside the wavefront sensor 90 is at a negligible level.
- the subroutine for measuring the wavefront aberration of the projection optical system PL in step 102 in FIG. 5 is performed.
- step 122 of Fig. 6 using a reticle loader (not shown), the measurement reticle RT shown in Fig. 8 is loaded onto the reticle stage RST, and predetermined preparation work is performed. .
- the pinhole pattern PH—PH is shown by the dotted line in FIG.
- detection of the relative position of the measurement reticle R with respect to the projection optical system PL, measurement of the baseline of the alignment detection system AS, and the like are performed. That is, by using the reticle alignment system described above, a pair of first fiducial marks formed on a fiducial mark plate (not shown) on the wafer stage WST, and a corresponding reticle alignment on the measurement reticle RT. Detects the positional relationship between the mark and the image via the projection optical system PL. The detection of the positional relationship is performed in a state where the reticle stage RST is moved to a position on the measurement reticle RT indicated by a dotted line in FIG.
- the wafer stage WST is driven in the XY plane by a predetermined amount to detect the positional relationship of the second fiducial mark formed on the fiducial mark plate with respect to the detection center of the alignment detection system AS using the alignment detection system AS.
- the baseline of the alignment detection system AS is calculated based on the above two positional relationships and the measured values of the interferometer at the time of detecting the respective positional relationships.
- the wavefront splitting unit 84 is placed on the optical path (optical axis A XI) inside the wavefront sensor 90 as described above using the flow path switching valve 76, the vacuum pump 78, and the air supply mechanism 66. Insert into
- the wafer stage WST is sequentially moved, and the alignment detection system AS is used to detect the position of at least two 9-lb two-dimensional position marks 9 lb on the wafer stage coordinate system on the signboard 91 of the wavefront sensor 90. Then, based on the detection result of the position, the positional relationship between the opening 9 la of the sign board 91 of the wavefront sensor 90, the ueno, and the stage WST is accurately obtained by a predetermined statistical operation such as a least square method.
- the XY position of the opening 91a can be accurately detected based on the position information (speed information) output from the wafer interferometer 18, and the XY position detection result and the measurement are performed first.
- the opening 91a can be accurately positioned at a desired XY position.
- the inclination of the sign board 91 with respect to a plane (XY plane) orthogonal to the optical axis AX of the projection optical system PL is measured using the multipoint focus position detection system (21, 22).
- the inclination of the upper surface of the sign plate 91 is adjusted by adjusting the inclination of the wafer stage WST via the wafer stage drive unit 24 based on the measurement result of the inclination described above. Match the inclination of the image plane (or the recent plane of the image plane).
- the reference measurement point in the field of view of the projection optical system PL for example, the measurement point at the center of the field of view, ie, the projection optical system PL of the pinhole pattern PH shown in FIG.
- the wafer stage WST is moved so that the opening 91a of the signboard 91 of the wavefront sensor 90 coincides with the measurement point at the conjugate position (on the optical axis AX) where the wave stage sensor 90 is located.
- the optimal Z position (best focus position) of the wafer stage WST is searched. Specifically, it is as follows.
- Fig. 9 (A) shows the optical arrangement when the search for the optimum Z position is performed along the optical axis AX1 of the wavefront sensor 90 and the optical axis AX of the projection optical system PL. ing.
- main controller 20 oscillates laser light LB from light source 6 and emits illumination light IL from illumination optical system 12, so that pinhole pattern P of measurement reticle RT is changed.
- the light that reaches H (illumination light IL) is emitted as a spherical wave from the pinhole pattern PH.
- pinhole patterns PH other than pinhole pattern PH
- the wavefront of the light condensed at the opening 91a (the image light flux of the pinhole pattern PH imaged inside the opening 91a on the surface of the signboard 91) is a substantially spherical shape including the wavefront aberration of the projection optical system PL.
- the light that has passed through the opening 91a is converted into parallel light by the collimator lens 92, and further enters the microlens array 94 after passing through the relay lens system 93.
- the microlens array 94 converts the image of the pinhole pattern PH imaged inside the opening 91a on the surface of the signboard 91 into the optical conjugate plane of the signboard 91, for each microlens 98 (see FIG. 4).
- An image is formed on the imaging surface (light receiving surface) of 5a. Therefore, a number of spot images (images of the pinhole pattern PH) corresponding to the microlenses 98 constituting the microlens array 94 are formed on the imaging surface of the CCD 95a.
- the CCD95a scans the imaging surface (light-receiving surface)
- the imaging data IMD1 obtained by the imaging of the CCD 95a is transmitted to the main controller 20.
- the wafer stage WST is stepped in the Z-axis direction via the wafer stage drive unit 24
- the above-mentioned image data IMD1 is captured, and for example, the contrast is determined based on the captured image data IMD1.
- the optimum Z position of the wafer stage WST is searched by finding the position in the Z-axis direction that is the maximum.
- the optimum exposure amount when measuring the wavefront aberration is determined. Specifically, with the position of the wafer stage WST in the Z-axis direction adjusted to the optimum Z position described above, for example, while changing the oscillation frequency (repetition frequency) of the light source 6, the acquisition of the imaging data IMD1 described above is performed.
- the optimum exposure amount is determined by repeatedly obtaining the repetition frequency corresponding to the imaging data IMD1 in which the number of pulses with respect to the charge accumulation time in the CCD 95a is optimal based on the captured imaging data IMD1.
- the wavefront splitting unit 84 is connected to the optical path (optical axis A) inside the wavefront sensor 90 as described above using the flow path switching valve 76, the vacuum pump 78, and the air supply mechanism 66.
- the optimum exposure amount when measuring the pupil image is determined. Specifically, it is as follows.
- FIG. 9 shows the optical arrangement for determining the optimum exposure amount when measuring the pupil image along the optical axis AX1 of the wavefront sensor 90 and the optical axis AX of the projection optical system PL. It is shown in B).
- the light (illumination light IL) that has reached the pinhole pattern PH of the measurement reticle RT is similar to the above.
- a pinhole pattern PH force is also emitted as a spherical wave, and after passing through the projection optical system PL
- the light condensed on the opening 91a of the sign board 91 of the wavefront sensor 90 and passed through the opening 91a is converted into parallel light by the collimator lens 92, further passed through the relay lens system 93, and received by the CCD 95a. .
- the light source image on the pupil plane of the projection optical system PL is projected on the light receiving surface of the CCD 95a.
- the image projected on the imaging surface (light receiving surface) is captured by the CCD 95a, and the imaging data IMD2 obtained by the imaging is transmitted to the main control device 20.
- the above-described capturing of the image data IMD2 is repeated, and based on the captured image data IMD2, the noise with respect to the charging time in the CCD 95a is determined.
- the repetition frequency corresponding to the imaging data IMD2 that gives the optimal number of pulses, the optimal exposure for pupil image measurement is determined.
- step 142 the counter n indicating the number of the measurement point is initialized to 1 (n ⁇ l), and thereafter, the process proceeds to step 144, where the wavefront aberration and pupil image of the projection optical system PL are set. Judgment is made as to whether or not the force is set to the first mode as the measurement mode. Then, when this determination is affirmed, that is, when the first mode is set as the measurement mode, the process proceeds to step 146.
- step 146 the wavefront sensor 90 is moved to the n-th (here, the first) measurement point.
- the wafer stage WST is moved so that the measurement point at the conjugate position of the nth pinhole pattern PH with respect to the projection optical system PL is aligned with the opening 9 la of the sign board 91 of the wavefront sensor 90.
- the pupil image imaging data IMD2 is It captures and extracts light source image data (position information of the light source image such as the center position and size) based on the imaging data IMD2, and stores the result in the memory.
- the determination here is denied, and the routine proceeds to step 152, increments the counter n by 1, and returns to step 146.
- the pupil image measurement is performed for the position measurement point, and the pinhole pattern PH—PH
- the data of the light source image (the position information of the light source image such as the center position and size) through each of them is extracted and stored in the memory.
- step 156 the wavefront splitting unit 84 is inserted into the optical path again, and then in step 158, the wavefront sensor 90 is moved to the n-th (here, the first) measurement point. That is, the ueno and the stage WST are moved so that the measurement point at the conjugate position of the nth pinhole pattern PH with respect to the projection optical system PL is aligned with the opening 91a of the sign board 91 of the wavefront sensor 90.
- step 160 the microlens array 94 captures all the spot images formed on the light receiving surface of the CCD 95a under the optimal exposure amount determined in step 134, and the imaging is performed. Import data IMD1.
- the position of each spot image formed on the imaging surface of the CCD 95a is detected by the microlens array 94 based on the imaging data IMD1. Specifically, the center position of each spot image is calculated by calculating the center of gravity of the light intensity distribution of each spot image, and the center position of each spot image thus obtained is calculated by the micro lens array 94. The position information of each spot image formed on the imaging surface of the CCD 95a is stored in the memory.
- the position information of each spot image is read from the memory, and the light is transmitted through the nth (here, the first) pinhole pattern PH on the measurement reticle RT.
- the wavefront aberration of the projection optical system PL regarding 1 is calculated as described later.
- the reason why the wavefront aberration can be measured is that the wavefront aberration of the light incident on the microlens array 94 reflects the wavefront aberration of the projection optical system PL when the spot image is taken. It is the power that is becoming.
- the wavefront WF is a plane orthogonal to the optical axis AX1, as shown by a dotted line (broken line) in FIG.
- the wavefront of the light incident on the microphone lens 98 is orthogonal to the optical axis, and is formed on the imaging surface of the CCD 95a with a spot image power centered on the intersection of the optical axis of the microlens 98 and the imaging surface of the CCD 95a.
- the wavefront WF ′ does not become a plane orthogonal to the optical axis AX1, as shown by a two-dot chain line in FIG.
- the surface has an inclination of an angle corresponding to the position on the plane.
- the wavefront of the light incident on the microlens 98 is inclined, and the spot image power centered on the point at which the intersection point between the optical axis of the microlens 98 and the imaging surface is shifted by a distance corresponding to the amount of the inclination.
- An image is formed on the imaging surface of the CCD 95a.
- the measurement reticle is obtained.
- the wavefront aberration of the projection optical system PL with respect to the light passing through the n-th pinhole pattern PH at RT is calculated.
- the positional force of each spot image expected when there is no wavefront aberration The coincidence between the optical axis of the micro lens 98 and the intersection of the imaging surface of the CCD 95a is that there is no deviation in the optical axis of the incident light. Only in the ideal case where the optical axis AX1 and the CCD 95a are exactly orthogonal. Therefore, in the present embodiment, when calculating the position error, based on the light source image data (the position information of the light source image such as the center position and the size) at the corresponding measurement point stored in the memory. Position of each spot image expected when there is no wavefront aberration (A reference position for calculating the shift amount), and the difference between each detected spot image position and each corrected reference position is calculated. This makes it possible to cancel the error of the reference position of each spot image when there is no wavefront aberration due to the shift of the optical axis of the light incident on the wavefront sensor 90, and obtain the wavefront aberration with higher accuracy be able to.
- the light source image data the position information of the light source
- the position error of the micro lens array 94 (each micro lens 98) is caused by the insertion of the micro lens array 94 on the optical path and the retreat from the optical path (removal from the optical path). And the position error of the spot image may occur due to the influence of the position error.
- the actual measured values of the amount of displacement (position error) of the spot image include: a. An error component due to aberration, b. An error component due to the above optical axis shift, and c. An error component caused by putting in and out of the road is included.
- the micro lens array 94 is repeatedly put into and taken out of the optical path a plurality of times in a short time.
- a distribution function indicating the distribution of the imaging position of the spot image formed on the imaging surface of the CCD 95a by the lens 98 is obtained, and the amount of deviation from the center of the imaging surface of the CCD 95a at the position where this distribution function becomes the maximum is defined as ⁇ ).
- the deviation ⁇ includes the error components of b.
- the component of b Can be easily obtained based on the data of the corresponding light source image.
- the determination here is denied, and the process proceeds to step 168, where the counter n is incremented by 1 and then returns to step 158.
- the processing of the loop of steps 158 ⁇ 160 ⁇ 162 ⁇ 164 ⁇ 166 ⁇ 168 is repeated until the determination in step 166 is affirmed.
- the 2nd to 33rd measurement points in the field of view of the projection optical system PL that is, the projection optical system PL of the pinhole pattern PH—PH
- Wavefront aberration measurement is performed for the measurement point of the conjugate position
- the wavefront aberration of the light passing through each of the PH and PH is calculated and stored in the memory.
- step 166 the process returns to step 104 of the main routine in FIG.
- step 144 determines whether the second mode has been set as the measurement mode. If the determination in step 144 described above is denied, that is, if the second mode has been set as the measurement mode, the process proceeds to step 170 and the wavefront sensor 90 is set to the n-th (here Then move to the first measurement point. That is, the wafer stage WST is moved so that the measurement point of the conjugate position of the nth pinhole pattern PH with respect to the projection optical system PL is aligned with the opening 9 la of the sign board 91 of the wavefront sensor 90.
- the pupil image measurement at the n-th (here, the first) measurement point is performed in the same manner as in step 148 described above, and the light source image data extracted based on the imaging data IMD2 is measured. (Position information of the light source image such as the center position and size) is stored in the memory.
- the n-th (here, the first) The measurement of the wavefront aberration at the measurement point of), that is, the measurement of the wavefront aberration of the projection optical system PL for the light passing through the nth pinhole pattern PH on the measurement reticle RT.
- the determination here is denied, and the process proceeds to step 184, where the counter n is incremented by 1 and further at step 186, the wavefront splitting unit 84 After the force on the optical path is also evacuated, the process returns to step 170.
- the loop processing of 76 ⁇ 178 ⁇ 180 ⁇ 182 ⁇ 184 ⁇ 186 is repeated.
- the 2nd to 33rd measurement points in the field of view of the projection optical system PL that is, the pinhole pattern PH—P
- the wavefront aberration is measured in consideration of the
- the wavefront aberration for the reflected light is calculated and stored in the memory.
- step 104 the wavefront aberration of the projection optical system PL is measured based on the wavefront aberration data at N (here 33) measurement points in the field of view of the projection optical system PL obtained above. It is determined whether or not the value is equal to or less than the allowable value. If this determination is denied, the process proceeds to step 106, and based on the measurement result of the wavefront aberration of the projection optical system PL, the imaging characteristic correction is performed so as to reduce the currently occurring wavefront aberration.
- the lens element is driven via the controller 251 to adjust the wavefront aberration of the projection optical system PL. In some cases, the lens element of the projection optical system PL may be manually moved in the XY plane or the lens element may be replaced by hand.
- step 102 the process of the subroutine of step 102 is performed, and the adjusted wavefront aberration of the projection optical system PL is measured in the same manner as described above. Thereafter, the adjustment of the wavefront aberration of the projection optical system PL (Step 106) and the measurement of the wavefront difference (Step 102) are repeatedly executed until a positive determination is made in Step 104. Then, when a positive determination is made in step 104, the process proceeds to step 108.
- step 108 an alarm sound is issued via an input / output device (not shown), and "wavefront aberration measurement end" is displayed on the display screen to notify the operator that the wavefront aberration has been measured. .
- step 110 the process waits for the wavefront sensor 90 to be detached from the wafer stage WST, and the fact that the wavefront sensor 90 has been detached from the wafer stage WST is notified, for example, by the output of a sensor (not shown) or notification of the operator's power. If confirmed, the process proceeds to step 112.
- step 112 the reticle stage RST is opened via a reticle loader (not shown). Unload the loaded measurement reticle RT and load the reticle R on which the pattern to be transferred is formed on the reticle stage RST.
- the baseline measurement using the reticle alignment system and the alignment detection system AS and the reference mark plate using the reticle alignment system and the reference mark plate (not shown) is performed by ordinary scanning. 'Perform the same procedure as in Stepper.
- the wafer is exchanged on the wafer stage WST via a wafer loader (not shown) (however, if the wafer is not loaded on the wafer stage WST, the wafer is simply loaded). .
- an alignment with respect to the wafer W (for example, an EGA type wafer alignment) is performed.
- an EGA type wafer alignment is disclosed in detail in Japanese Patent Application Laid-Open No. 61-44429 and corresponding US Pat. No. 4,780,617, etc. To the extent permitted by national law (or selected elected country), the disclosures in the above publications and corresponding US patents are hereby incorporated by reference.
- next step 118 an operation of moving wafer stage WST to a scan start position (acceleration start position) for exposure of each shot area on wafer W based on the result of the above wafer alignment is described. Irradiating the reticle R with the illumination light IL while transferring the reticle stage RST and the wafer stage WST in synchronization with each other in the Y-axis direction to transfer the pattern of the reticle R to the shot area on the wafer W. Repeated, step-and-scan exposure is performed.
- next step 120 exposure of the predetermined number of wafers (for example, one lot) is completed. It is determined whether or not the force has been applied. If the determination is negative, the process returns to step 114, and thereafter, the processing of the loop of steps 114 ⁇ 116 ⁇ 118 ⁇ 120 is repeated until the determination in step 120 is affirmed.
- step 120 When the exposure of the predetermined number of wafers is completed, the determination in step 120 is affirmed, and the series of processing of this routine is completed.
- the main control device 20 constitutes a processing device for calculating the value, and the wavefront sensor 90 and the main control device 20 constitute an optical characteristic measuring device.
- the insertion / removal mechanism (the air cylinder 88, the flow path switching valve 76, the vacuum pump 78, and the air supply mechanism 66) ),
- the microlens array at a position near the pupil conjugate plane of the projection optical system PL (and the illumination optical system) with respect to the optical path of the light passing through the collimator lens 92 constituting the light receiving optical system inside the housing 97 described above.
- the 94 wavefront splitting unit 84
- the inserted microlens array 94 also loses its force on the optical path.
- a detector 95 outputs a detection signal (for example, the above-described image data IMD1) including information on the projection optical system PL.
- a detection signal for example, the above-described image data IMD1
- the detection including the information on the optical characteristics of the projection optical system PL related to each of the divided wavefronts is detected from the detector 95.
- a signal (for example, the above-described imaging data IMD1) is output.
- a detector 95 outputs a detection signal (for example, the above-described imaging data IMD2) including information on the optical characteristics of the projection optical system PL.
- the detector 95 outputs a detection signal (for example, the above-described imaging data IMD2) including information on the optical characteristics of the projection optical system PL related to the shape and position of the pupil plane.
- the detection signal from the detector 95 (for example, the imaging data IMD1, IMD2)
- the optical characteristics (wavefront aberration in the above example) required based on the measurement cannot be degraded by the polarization characteristics existing in the half mirror. Therefore, it is possible to measure optical characteristics (eg, wavefront aberration) of the projection optical system PL with high accuracy.
- the main controller 20 functioning as a processing device has the microlens array 94 inserted into the optical path by the above-described insertion / removal mechanism.
- the wavefront aberration is calculated as the first optical property of the projection optical system PL (test optical system) based on the detection signal from the detector 95.
- the wavefront formed by irradiating the illumination light IL onto the pinhole pattern PH of the measurement reticle RT is divided by the microlens array 94 and The shift between the spot image obtained for each micro lens 98 of the array 94 and the reference position is detected, and the wavefront aberration is used as the first optical characteristic of the projection optical system PL (test optical system) using, for example, a Trunike polynomial. Seeking.
- main controller 20 controls the above-described pupil image (light source) based on a detection signal from detector 95.
- Image data position information of the light source image such as the center position and size
- image data is calculated as the second optical characteristic of the projection optical system PL. This is because, in order to accurately determine the wavefront aberration using the Zelke polynomial, it is desirable to correct the deviation of the reference position for calculating the wavefront aberration based on the pupil position and size of the projection optical system PL. Because.
- the position of the light source image is accurately detected, and the reference position is determined based on the position and size of the detected light source image. Is corrected. Therefore, in the present embodiment, it is possible to accurately measure the wavefront aberration.
- the optical characteristic measuring apparatus uses the on-body to accurately set the wavefront aberration, which is an overall aberration, as the optical characteristic of the projection optical system PL. Can be measured. Then, after adjusting the projection optical system PL based on the wavefront aberration of the projection optical system PL, the exposure is performed using the projection optical system PL in which various aberrations are sufficiently reduced. Since light is emitted, the pattern formed on the reticle R can be accurately transferred onto the wafer W.
- the measurement reticle RT on which a plurality of pinhole patterns are formed is loaded on the reticle stage RST, the measurement reticle RT is illuminated with the illumination light IL, and the measurement reticle RT
- the spherical wave generated by the pinhole pattern formed in the above is made incident on the projection optical system PL and the pupil image measurement or the image of the pinhole pattern is measured using the wavefront sensor 90 has been described.
- the object to be measured by the optical characteristic measuring device of the present invention is not limited to these.
- the optical characteristic measuring device can be applied to measurement of optical characteristics of various optical systems other than measurement of aberration of the optical system.
- the reticle R is not held on the reticle stage RST, or the glass reticle is held without blocking the light irradiated on the reticle stage RST, and the opening 91a of the sign board 91 of the wavefront sensor 90 has the optical axis.
- ⁇ ⁇ ⁇ Move the wafer stage WST so that it is positioned above.
- This movement is performed by controlling the wafer stage driving unit 24 based on the position information (speed information) of the wafer stage WST detected by the main controller 20 force and the wafer interferometer 18 as described above.
- the wavefront splitting unit 84 of the wavefront sensor 90 is also in a state where the force on the optical path is also retracted.
- the illumination light IL emitted from the illumination system reaches the opening 91a of the sign board 91 of the wavefront sensor 90 after passing through the projection optical system PL.
- the light that has passed through the opening 91a is converted into parallel light by a collimator lens 92, and further enters a CCD 95a after passing through a relay lens system 93.
- the light source images formed on these imaging surfaces are captured by the CCD 95a.
- the imaging data IMD2 is sent to the main controller 20, where each pixel corresponding to the light source image is extracted by the main controller 20 in the same manner as in the pupil image measurement described above, and the position and size of the light source image are extracted. Is detected.
- the coherence factor ⁇ value (illumination ⁇ ) is defined by the ratio between the size of the light source image on the entrance pupil plane in the projection optical system PL and the size of the entrance pupil.
- Known entrance pupil size The position of the entrance pupil plane in the projection optical system PL and the position of the imaging plane of the CCD 95a of the wavefront sensor 90, which is a roughly conjugate plane of the entrance pupil plane, are known.
- the main controller 20 can also obtain the coherence factor ⁇ value (illumination ⁇ ) for the size of the light source image captured by the CCD 95a. it can.
- the illumination ⁇ . ⁇ . Is the input power in the projection optical system PL which can be calculated from the coherence factor ⁇ obtained as described above and ⁇ . A. of the known projection optics PL.
- the position of the projection pupil plane and the position of the imaging plane of the CCD 95a of the wavefront sensor 90, which is a roughly conjugate plane of the entrance pupil plane, are known, and the position of the imaging plane of the CCD 95a with respect to the light source image on the entrance pupil plane of the projection optical system PL is known.
- main controller 20 can obtain illumination NA from the size of the light source image captured by CCD 95a by a simple calculation.
- the main controller 20 determines the size of the light source image captured by the CCD 95a while the microlens array 94 is retracted on the optical path. Since detection can be performed with high accuracy, illumination ⁇ or illumination ⁇ . ⁇ . Can be measured with high accuracy as the second optical characteristic of the optical system to be measured.
- the illumination conditions under which illumination ⁇ is measured are not limited to ordinary illumination, but may be annular illumination, quadrupole illumination, or the like. That is, the region where the illumination light is distributed on the pupil plane of the illumination optical system is not limited to a circular or elliptical shape, or a ring zone, or a plurality of local regions distributed almost equidistant from the optical axis of the illumination optical system. And so on.
- the number of aperture patterns in measurement reticle RT is 11 ⁇ 3
- the number can be increased or decreased according to the desired measurement accuracy of the wavefront aberration. Also, the number and arrangement of the microlenses 98 in the microlens array 94 can be changed according to the desired measurement accuracy of the wavefront aberration.
- the wavefront splitting optical element is constituted by the air cylinder 88, the flow path switching valve 76, the vacuum pump 78, and the air supply mechanism 66, and controlled by the main controller 20 to operate the wavefront splitting optical element.
- the description has been given of the case where the light entering the collimator lens 92 is inserted into and removed from the optical path of the microlens array 94 as a force It is also possible to employ an insertion / removal mechanism for manually moving the microlens into and out of the optical path.
- Such a detachment mechanism can be configured to include, for example, a guide that guides the wavefront dividing unit 84 in the vertical direction.
- the same pinhole pattern as that of the force measurement reticle in which the measurement reticle RT is loaded on the reticle stage RST is formed.
- the patterned plate may be permanently installed on the reticle stage RST, and the patterned plate may be aligned with the field of view of the projection optical system PL to measure the wavefront aberration of the projection optical system PL.
- the aberration of the light receiving optical system inside the wavefront sensor 90 is set to be negligibly small.
- the wavefront difference is calculated.
- the wavefront aberration of the light receiving optical system alone may be measured at any one of the points up to.
- the measurement of the wavefront aberration of the light-receiving optical system alone is performed by using a pattern plate having a pinhole pattern large enough to generate a spherical wave by irradiating the illumination light IL through the projection optical system PL with the signboard 91 or the signboard 91.
- the pattern plate is irradiated with illumination light IL emitted from the projection optical system PL to measure the wavefront aberration in the same manner as described above. It can be realized by doing. Then, when calculating the wavefront aberration of the projection optical system PL, the above wavefront aberration of the light receiving optical system alone may be used as a correction value.
- the dark current of the CCD 95a is measured at some point before the wavefront aberration is calculated, and the value (luminance value) of each pixel is calculated.
- the offset due to the dark current may be corrected. Such offset correction is preferably performed in the case of the above-described pupil image measurement or the like.
- the wavefront aberration measurement and the wavefront aberration adjustment of the projection optical system PL are performed at the time of regular maintenance after the exposure apparatus is assembled, and in preparation for the subsequent exposure of the wafer.
- the adjustment of the wavefront aberration may be performed in the same manner as in the above embodiment.
- the position adjustment of some lens elements constituting the projection optical system PL performed in the above-described embodiment is performed. It is possible to adjust the position of another lens element, re-force the lens element, replace the lens element, and the like.
- wavefront sensor 90 may be permanently installed on wafer stage WST. !,.
- a force in which a fly-eye lens is used as the optical integrator 222 may be replaced with a micro fly-array lens.
- a force in which a fly-eye lens is used as the optical integrator 222 may be replaced with a micro fly-array lens.
- an internal reflection type integrator such as a rod integrator
- a virtual image is detected as a light source image.
- the present invention is not limited to this.
- the present invention can be applied to any device that has an element and can measure the target optical characteristics by inserting or removing the wavefront splitting optical element on the light receiving optical path. .
- the light source 6 of the exposure apparatus of the above embodiment includes an F laser light source and an ArF excimer laser.
- Ultra-high pressure mercury lamps that emit bright lines such as g-line (wavelength 436 nm) and i-line (wavelength 365 nm) are not limited to ultraviolet pulse light sources such as laser light sources and KrF excimer laser light sources.
- a single-wavelength laser beam in the infrared or visible region where the power of a DFB semiconductor laser or fiber laser is also oscillated is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and ytterbium) to form a nonlinear optical crystal.
- a harmonic that has been wavelength-converted to ultraviolet light may be used.
- the magnification of the projection optical system may be not only the reduction system but also the same magnification and the magnification system.
- the present invention is not limited to the case of an exposure apparatus having a projection optical system, as long as it is a step-and-repeat machine or a step-and-scan machine. Applicable regardless of the step-and-state machine.
- the application of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing.
- the present invention can be widely applied to an exposure apparatus for liquid crystal, which transfers a liquid crystal display element pattern onto a square glass plate, and an exposure apparatus for manufacturing an organic EL, a thin-film magnetic head, a micromachine, a DNA chip, and the like.
- glass substrates or silicon wafers are used to manufacture reticles or masks used in light exposure devices, EUV exposure devices, X-ray exposure devices, electron beam exposure devices, etc. that can be used only with microdevices such as semiconductor devices.
- the present invention can also be applied to an exposure apparatus that transfers a circuit pattern to an exposure apparatus.
- FIG. 10 shows a flowchart of an example of manufacturing devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).
- a function / performance design of a device for example, a circuit design of a semiconductor device
- a pattern design for realizing the function is performed.
- step 302 mask manufacturing step
- a mask on which the designed circuit pattern is formed is manufactured.
- step 303 wafer manufacturing step
- a wafer is manufactured using a material such as silicon.
- step 304 wafer processing step
- step 303 wafer processing step
- step 305 device assembly step
- step 305 includes steps such as a dicing step, a bonding step, and a packaging step (chip sealing) as necessary.
- step 306 inspection step
- inspections such as an operation confirmation test and an endurance test of the device created in step 305 are performed. After these steps, the device is completed and shipped.
- FIG. 11 shows a detailed flow example of step 304 in the semiconductor device.
- step 311 oxidation step
- step 312 CVD step
- step 313 electrode forming step
- step 314 ion implantation step
- ions are implanted into the ueno.
- a post-processing step is executed as follows.
- step 315 resist forming step
- step 316 exposure step
- step 317 development step
- step 318 etching step
- step 319 resist removing step
- step 31 If the device manufacturing method of the present embodiment described above is used, an exposure step (step 31
- the reticle pattern can be transferred onto the wafer with high accuracy.
- the productivity (including yield) of highly integrated devices can be improved.
- the optical characteristic measuring device and the optical characteristic measuring method of the present invention are suitable for measuring the optical characteristics of the test optical system. Further, the exposure apparatus and the exposure method of the present invention are suitable for transferring a pattern formed on a mask onto a photosensitive object. Further, the device manufacturing method of the present invention is suitable for manufacturing micro devices.
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- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
Description
Claims
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JP2005514762A JPWO2005038885A1 (ja) | 2003-10-16 | 2004-10-14 | 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法 |
EP04792351A EP1681709A4 (en) | 2003-10-16 | 2004-10-14 | DEVICE AND METHOD FOR MEASURING OPTICAL CHARACTERISTICS, EXPOSURE SYSTEM AND EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
US11/403,868 US7298498B2 (en) | 2003-10-16 | 2006-04-14 | Optical property measuring apparatus and optical property measuring method, exposure apparatus and exposure method, and device manufacturing method |
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US11/403,868 Continuation US7298498B2 (en) | 2003-10-16 | 2006-04-14 | Optical property measuring apparatus and optical property measuring method, exposure apparatus and exposure method, and device manufacturing method |
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US (1) | US7298498B2 (ja) |
EP (1) | EP1681709A4 (ja) |
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US7362336B2 (en) * | 2005-01-12 | 2008-04-22 | Eastman Kodak Company | Four color digital cinema system with extended color gamut and copy protection |
JP5224667B2 (ja) * | 2005-09-29 | 2013-07-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2009088246A (ja) * | 2007-09-28 | 2009-04-23 | Canon Inc | 露光装置およびデバイス製造方法 |
JP5219534B2 (ja) * | 2008-01-31 | 2013-06-26 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
DE102011005826A1 (de) | 2011-03-21 | 2012-03-29 | Carl Zeiss Smt Gmbh | Optische Vorrichtung |
DE102012205181B4 (de) | 2012-03-30 | 2015-09-24 | Carl Zeiss Smt Gmbh | Messvorrichtung zum Vermessen einer Beleuchtungseigenschaft |
CN105424322B (zh) * | 2015-11-09 | 2017-12-26 | 中国科学院长春光学精密机械与物理研究所 | 自校准光轴平行性检测仪及检测方法 |
CN105334028B (zh) * | 2015-12-14 | 2017-11-24 | 中国科学院光电技术研究所 | 一种利用单探测器合成远场提高双光束合成精度和指向精度的标定方法 |
US10518358B1 (en) | 2016-01-28 | 2019-12-31 | AdlOptica Optical Systems GmbH | Multi-focus optics |
JP6650819B2 (ja) * | 2016-04-15 | 2020-02-19 | 株式会社 資生堂 | 色ムラ部位の評価方法、色ムラ部位評価装置及び色ムラ部位評価プログラム |
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EP4075115A1 (en) * | 2021-04-16 | 2022-10-19 | Dynamic Optics S.r.l. | Method for detecting optical aberrations and apparatus for detecting optical aberrations |
CN113532810B (zh) * | 2021-09-17 | 2021-12-14 | 武汉锐科光纤激光技术股份有限公司 | 一种qbh指向误差测试装置及方法 |
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Also Published As
Publication number | Publication date |
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EP1681709A4 (en) | 2008-09-17 |
JPWO2005038885A1 (ja) | 2007-02-01 |
US20060250607A1 (en) | 2006-11-09 |
US7298498B2 (en) | 2007-11-20 |
EP1681709A1 (en) | 2006-07-19 |
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