KR20090060204A - 전원 전환 회로 - Google Patents
전원 전환 회로 Download PDFInfo
- Publication number
- KR20090060204A KR20090060204A KR1020080123333A KR20080123333A KR20090060204A KR 20090060204 A KR20090060204 A KR 20090060204A KR 1020080123333 A KR1020080123333 A KR 1020080123333A KR 20080123333 A KR20080123333 A KR 20080123333A KR 20090060204 A KR20090060204 A KR 20090060204A
- Authority
- KR
- South Korea
- Prior art keywords
- power supply
- supply voltage
- voltage
- transistor
- deflation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 101000805729 Homo sapiens V-type proton ATPase 116 kDa subunit a 1 Proteins 0.000 abstract 2
- 101000854873 Homo sapiens V-type proton ATPase 116 kDa subunit a 4 Proteins 0.000 abstract 2
- 101000806601 Homo sapiens V-type proton ATPase catalytic subunit A Proteins 0.000 abstract 2
- 102100037979 V-type proton ATPase 116 kDa subunit a 1 Human genes 0.000 abstract 2
- 102100020737 V-type proton ATPase 116 kDa subunit a 4 Human genes 0.000 abstract 2
- 101100263704 Arabidopsis thaliana VIN3 gene Proteins 0.000 description 10
- 101000850434 Homo sapiens V-type proton ATPase subunit B, brain isoform Proteins 0.000 description 10
- 101000670953 Homo sapiens V-type proton ATPase subunit B, kidney isoform Proteins 0.000 description 10
- 102100033476 V-type proton ATPase subunit B, brain isoform Human genes 0.000 description 10
- 101100102627 Oscarella pearsei VIN1 gene Proteins 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Power Sources (AREA)
Abstract
Description
Claims (3)
- 비휘발성 메모리의 내부에서 사용되는 복수의 전원 전압을 전환하여 전원 전압 출력 단자로 출력하는 전원 전환 회로로서,상기 복수의 전원 전압 중에서 가장 높은 전압인 제 1 전원 전압이 입력되는 제 1 전원 전압 입력 단자와,상기 제 1 전원 전압보다 낮은 전압인 제 2 전원 전압이 입력되는 제 2 전원 전압 입력 단자와,상기 제 1 전원 전압 입력 단자와 상기 전원 전압 출력 단자 사이에 형성되고, 백게이트가 상기 제 1 전원 전압에 접속된 인핸스먼트형 PM0S 트랜지스터와,상기 제 2 전원 전압 입력 단자와 상기 전원 전압 출력 단자 사이에 형성되고, 백게이트가 VSS 에 접속된 디플레이션형 NMOS 트랜지스터와,상기 인핸스먼트형 PMOS 트랜지스터의 게이트를 제어하는 제 1 제어 신호의 진폭을 제 1 전원 전압-VSS 로 변환하는 제 1 레벨 시프트 회로와,상기 디플레이션형 NM0S 트랜지스터의 게이트를 제어하는 제 2 제어 신호의 진폭을 제 1 전원 전압-VSS 로 변환하는 제 2 레벨 시프트 회로를 구비한 것을 특징으로 하는 전원 전환 회로.
- 비휘발성 메모리의 내부에서 사용되는 복수의 전원 전압을 전환하여 전원 전압 출력 단자로 출력하는 전원 전환 회로로서,상기 복수의 전원 전압 중에서 가장 높은 전압인 제 1 전원 전압이 입력되는 제 1 전원 전압 입력 단자와,상기 제 1 전원 전압보다 낮은 전압인 제 2 전원 전압이 입력되는 제 2 전원 전압 입력 단자와,상기 제 1 전원 전압 입력 단자와 상기 전원 전압 출력 단자 사이에 형성되고, 백게이트가 상기 제 1 전원 전압에 접속된 인핸스먼트형 PM0S 트랜지스터와,상기 제 2 전원 전압 입력 단자와 상기 전원 전압 출력 단자 사이에 형성되고, 백게이트가 VSS 에 접속된 디플레이션형 NMOS 트랜지스터와,상기 인핸스먼트형 PMOS 트랜지스터의 게이트를 제어하는 제 1 제어 신호의 진폭을 제 1 전원 전압-VSS 로 변환하는 제 1 레벨 시프트 회로와,상기 디플레이션형 NM0S 트랜지스터의 게이트를 제어하는 제 2 제어 신호의 진폭을 제 2 전원 전압-VSS 로 변환하는 제 2 레벨 시프트 회로를 구비한 것을 특징으로 하는 전원 전환 회로.
- 제 1 항 또는 제 2 항에 있어서,상기 비휘발성 메모리는, EEPROM 인 것을 특징으로 하는 전원 전환 회로.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2007-315461 | 2007-12-06 | ||
JP2007315461A JP2009141640A (ja) | 2007-12-06 | 2007-12-06 | 電源切換回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090060204A true KR20090060204A (ko) | 2009-06-11 |
KR101157850B1 KR101157850B1 (ko) | 2012-06-22 |
Family
ID=40720882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080123333A Expired - Fee Related KR101157850B1 (ko) | 2007-12-06 | 2008-12-05 | 전원 전환 회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7826297B2 (ko) |
JP (1) | JP2009141640A (ko) |
KR (1) | KR101157850B1 (ko) |
CN (1) | CN101452746B (ko) |
TW (1) | TWI496147B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9225175B2 (en) | 2012-08-31 | 2015-12-29 | SK Hynix Inc. | Power voltage selection device |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4863844B2 (ja) * | 2006-11-08 | 2012-01-25 | セイコーインスツル株式会社 | 電圧切替回路 |
US10149177B2 (en) | 2006-11-18 | 2018-12-04 | Rfmicron, Inc. | Wireless sensor including an RF signal circuit |
US10164611B2 (en) | 2006-11-18 | 2018-12-25 | Rfmicron, Inc. | Method and apparatus for sensing environmental conditions |
US10715209B2 (en) | 2006-11-18 | 2020-07-14 | RF Micron, Inc. | Computing device for processing environmental sensed conditions |
US11817637B2 (en) | 2006-11-18 | 2023-11-14 | Rfmicron, Inc. | Radio frequency identification (RFID) moisture tag(s) and sensors with extended sensing via capillaries |
US12073272B2 (en) | 2006-11-18 | 2024-08-27 | Rfmicron, Inc. | Generating a response by a radio frequency identification (RFID) tag within a field strength shell of interest |
CN101988939B (zh) * | 2009-07-31 | 2014-06-04 | 环旭电子股份有限公司 | 外部电源供应装置及其电源供应方法 |
US9059692B2 (en) * | 2011-05-31 | 2015-06-16 | Fairchild Semiconductor Corporation | Rail to rail comparator with wide hysteresis and memory |
US9337660B1 (en) * | 2011-12-13 | 2016-05-10 | Marvell Israel (M.I.S.L) Ltd. | Switching arrangement for power supply from multiple power sources |
US9606150B1 (en) | 2011-12-13 | 2017-03-28 | Marvell International Ltd. | Sensing arrangement for sensing a voltage from multiple voltage sources |
KR102072767B1 (ko) | 2013-11-21 | 2020-02-03 | 삼성전자주식회사 | 고전압 스위치 및 그것을 포함하는 불휘발성 메모리 장치 |
US10746682B2 (en) | 2014-10-08 | 2020-08-18 | Rfmicron, Inc. | Wireless sensor with multiple sensing options |
US10090674B2 (en) * | 2015-09-21 | 2018-10-02 | Silicon Laboratories Inc. | Maximum supply voltage selection |
US10103626B1 (en) * | 2017-07-12 | 2018-10-16 | Qualcomm Incorporated | Digital power multiplexor |
CN111342541B (zh) * | 2018-12-19 | 2021-04-16 | 智原微电子(苏州)有限公司 | 电源切换电路 |
EP4189522B1 (en) | 2020-07-31 | 2025-06-11 | Qualcomm Incorporated | Systems and methods for adaptive power multiplexing |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3058381B2 (ja) * | 1993-01-29 | 2000-07-04 | 株式会社リコー | 電圧検出装置および電子装置 |
JP3148454B2 (ja) | 1993-03-31 | 2001-03-19 | 富士通株式会社 | 半導体装置の電源切換回路 |
JP2565104B2 (ja) * | 1993-08-13 | 1996-12-18 | 日本電気株式会社 | 仮想接地型半導体記憶装置 |
US6335878B1 (en) * | 1998-07-28 | 2002-01-01 | Hitachi, Ltd. | Non-volatile multi-level semiconductor flash memory device and method of driving same |
US6198337B1 (en) * | 1996-12-11 | 2001-03-06 | A & Cmos Communications Device Inc. | Semiconductor device for outputting a reference voltage, a crystal oscillator device comprising the same, and a method of producing the crystal oscillator device |
JPH1174772A (ja) * | 1997-08-29 | 1999-03-16 | Sharp Corp | 電源電圧切換回路 |
JP3139542B2 (ja) * | 1998-01-28 | 2001-03-05 | 日本電気株式会社 | 参照電圧発生回路 |
JP2000182387A (ja) * | 1998-12-14 | 2000-06-30 | Global Alliance Kk | 不揮発性メモリー |
JP2000276882A (ja) * | 1999-03-23 | 2000-10-06 | Nec Corp | 不揮発性半導体記憶装置とその記憶データの消去方法 |
KR20010005093A (ko) * | 1999-06-30 | 2001-01-15 | 김영환 | 저전력 레벨 쉬프터 구현을 위한 반도체집적회로 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
JP3980383B2 (ja) * | 2002-03-18 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US7064529B2 (en) * | 2003-09-17 | 2006-06-20 | Atmel Corporation | Dual stage voltage regulation circuit |
KR100558549B1 (ko) * | 2003-12-05 | 2006-03-10 | 삼성전자주식회사 | 외부 전원전압 제어기능을 갖는 반도체 장치 및 그에 따른제어방법 |
JP4487559B2 (ja) * | 2003-12-18 | 2010-06-23 | 株式会社ニコン | レベルシフト回路、並びに、これを用いたアクチュエータ装置及び光スイッチシステム |
-
2007
- 2007-12-06 JP JP2007315461A patent/JP2009141640A/ja active Pending
-
2008
- 2008-11-27 TW TW097145918A patent/TWI496147B/zh not_active IP Right Cessation
- 2008-12-04 US US12/328,180 patent/US7826297B2/en not_active Expired - Fee Related
- 2008-12-05 KR KR1020080123333A patent/KR101157850B1/ko not_active Expired - Fee Related
- 2008-12-05 CN CN2008101863667A patent/CN101452746B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9225175B2 (en) | 2012-08-31 | 2015-12-29 | SK Hynix Inc. | Power voltage selection device |
Also Published As
Publication number | Publication date |
---|---|
CN101452746B (zh) | 2013-08-21 |
CN101452746A (zh) | 2009-06-10 |
US20090146499A1 (en) | 2009-06-11 |
TW200941483A (en) | 2009-10-01 |
US7826297B2 (en) | 2010-11-02 |
TWI496147B (zh) | 2015-08-11 |
KR101157850B1 (ko) | 2012-06-22 |
JP2009141640A (ja) | 2009-06-25 |
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