KR20080041128A - 에피택셜 웨이퍼의 제조 방법 - Google Patents
에피택셜 웨이퍼의 제조 방법 Download PDFInfo
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- KR20080041128A KR20080041128A KR1020070112483A KR20070112483A KR20080041128A KR 20080041128 A KR20080041128 A KR 20080041128A KR 1020070112483 A KR1020070112483 A KR 1020070112483A KR 20070112483 A KR20070112483 A KR 20070112483A KR 20080041128 A KR20080041128 A KR 20080041128A
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 152
- 239000010703 silicon Substances 0.000 claims abstract description 152
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 150
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000001301 oxygen Substances 0.000 claims abstract description 72
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 72
- 238000000137 annealing Methods 0.000 claims abstract description 34
- 238000001816 cooling Methods 0.000 claims abstract description 34
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims description 146
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- 238000002360 preparation method Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 12
- 238000005247 gettering Methods 0.000 abstract description 8
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 239000007789 gas Substances 0.000 description 25
- 229910052786 argon Inorganic materials 0.000 description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 13
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- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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- 150000003376 silicon Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
- 보론이 첨가된 실리콘 융액으로부터 실리콘 단결정을 챔버 내에서 초크랄스키법에 의해 인상시키는 공정과, 상기 단결정을 슬라이스하여 얻어진 실리콘 웨이퍼의 표면에 에피택셜층을 형성하는 공정을 포함하는 에피택셜 웨이퍼의 제조 방법에 있어서,상기 단결정은 상기 챔버 내의 인상 도중의 800 내지 600℃의 온도 영역을 250분 이하 180분 이상에 걸쳐 통과시켜 육성되고,상기 육성된 단결정은 10×1017 내지 12×1017atoms/cm3(ASTM F121-1979) 미만의 산소 농도 및 0.03 내지 0.01Ωcm의 저항률을 가지며,상기 실리콘 웨이퍼의 표면에 에피택셜층을 형성하기 전에 상기 웨이퍼를 불활성 가스 분위기 하 650 내지 900℃의 온도 범위 내의 소정의 온도에서 10분 내지 4시간 유지하는 프리 어닐링을 행하는 것을 특징으로 하는 에피택셜 웨이퍼의 제조 방법.
- 청구항 1에 있어서, 실온에서 프리 어닐링의 소정의 온도로 승온하는 승온 속도가 1 내지 8℃/분이고, 상기 소정의 온도에서 실온까지 냉각하는 강온 속도가 5 내지 2℃/분인 에피택셜 웨이퍼의 제조 방법.
- 보론이 첨가된 실리콘 융액으로부터 실리콘 단결정을 챔버 내에서 강제 냉각하여 챔버 내에서 초크랄스키법에 의해 인상시키는 공정과, 상기 단결정을 슬라이스하여 얻어진 실리콘 웨이퍼의 표면에 에피택셜층을 형성하는 공정을 포함하는 에피택셜 웨이퍼의 제조 방법에 있어서,상기 단결정은 상기 챔버 내의 인상 도중의 800 내지 600℃의 온도 영역을 180분 미만 120분 이상에 걸쳐 통과시켜 육성되고,상기 육성된 단결정은 10×1017 내지 14×1017atoms/cm3(ASTM F121-1979) 이하의 산소 농도 및 0.03 내지 0.01Ωcm의 저항률을 가지며,상기 실리콘 웨이퍼의 표면에 에피택셜층을 형성하기 전에 상기 웨이퍼를 불활성 가스 분위기 하 650 내지 900℃의 온도 범위 내의 소정의 온도에서 10분 내지 4시간 유지하는 프리 어닐링을 행하는 것을 특징으로 하는 에피택셜 웨이퍼의 제조 방법.
- 청구항 3에 있어서, 실온에서 프리 어닐링의 소정의 온도로 승온하는 승온 속도가 1 내지 8℃/분이고, 상기 소정의 온도에서 실온까지 냉각하는 강온 속도가 5 내지 2℃/분인 에피택셜 웨이퍼의 제조 방법.
- 청구항 3 또는 청구항 4에 있어서, 강제 냉각은 챔버 내에 설치된 수냉식 냉각 장치에 의해 행해지는 에피택셜 웨이퍼의 제조 방법.
- 웨이퍼의 에피택셜층 표면에서 0.09μm 이상의 크기의 에피택셜 결함이 3개/장 이하의 밀도를 가지며, 상기 에피택셜층을 제외한 상기 웨이퍼 내부에 형성되는 산소 석출물 밀도가 1×104개/cm2 이상인 것을 특징으로 하는 에피택셜 웨이퍼.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006300644A JP4853237B2 (ja) | 2006-11-06 | 2006-11-06 | エピタキシャルウェーハの製造方法 |
JPJP-P-2006-00300644 | 2006-11-06 |
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KR20080041128A true KR20080041128A (ko) | 2008-05-09 |
KR100933552B1 KR100933552B1 (ko) | 2009-12-23 |
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KR1020070112483A KR100933552B1 (ko) | 2006-11-06 | 2007-11-06 | 에피택셜 웨이퍼의 제조 방법 |
Country Status (5)
Country | Link |
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US (1) | US8920560B2 (ko) |
EP (1) | EP1926134B1 (ko) |
JP (1) | JP4853237B2 (ko) |
KR (1) | KR100933552B1 (ko) |
TW (1) | TWI365235B (ko) |
Cited By (2)
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US10211066B2 (en) | 2015-05-08 | 2019-02-19 | Sumco Corporation | Silicon epitaxial wafer and method of producing same |
KR20200028439A (ko) * | 2017-08-04 | 2020-03-16 | 실트로닉 아게 | 단결정질 실리콘의 반도체 웨이퍼 및 반도체 웨이퍼를 제조하는 방법 |
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JP4805681B2 (ja) * | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
JP5136518B2 (ja) * | 2008-06-16 | 2013-02-06 | 株式会社Sumco | シリコン単結晶の育成方法 |
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JP2011082443A (ja) * | 2009-10-09 | 2011-04-21 | Sumco Corp | エピタキシャルウェーハおよびその製造方法 |
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- 2007-10-29 TW TW096140611A patent/TWI365235B/zh active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US10211066B2 (en) | 2015-05-08 | 2019-02-19 | Sumco Corporation | Silicon epitaxial wafer and method of producing same |
KR20200028439A (ko) * | 2017-08-04 | 2020-03-16 | 실트로닉 아게 | 단결정질 실리콘의 반도체 웨이퍼 및 반도체 웨이퍼를 제조하는 방법 |
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JP4853237B2 (ja) | 2012-01-11 |
US20080286565A1 (en) | 2008-11-20 |
TWI365235B (en) | 2012-06-01 |
TW200829732A (en) | 2008-07-16 |
JP2008115050A (ja) | 2008-05-22 |
EP1926134A1 (en) | 2008-05-28 |
US8920560B2 (en) | 2014-12-30 |
KR100933552B1 (ko) | 2009-12-23 |
EP1926134B1 (en) | 2016-03-30 |
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