KR20070069056A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR20070069056A
KR20070069056A KR1020060133820A KR20060133820A KR20070069056A KR 20070069056 A KR20070069056 A KR 20070069056A KR 1020060133820 A KR1020060133820 A KR 1020060133820A KR 20060133820 A KR20060133820 A KR 20060133820A KR 20070069056 A KR20070069056 A KR 20070069056A
Authority
KR
South Korea
Prior art keywords
light emitting
emitting element
substrate
semiconductor device
partition wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060133820A
Other languages
English (en)
Korean (ko)
Inventor
마사히로 스노하라
미츠토시 히가시
유이치 다구치
히데아키 사카구치
아키노리 시라이시
나오유키 고이즈미
게이 무라야마
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20070069056A publication Critical patent/KR20070069056A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Led Device Packages (AREA)
KR1020060133820A 2005-12-27 2006-12-26 반도체 장치 및 그 제조 방법 Withdrawn KR20070069056A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005375901A JP5073946B2 (ja) 2005-12-27 2005-12-27 半導体装置および半導体装置の製造方法
JPJP-P-2005-00375901 2005-12-27

Publications (1)

Publication Number Publication Date
KR20070069056A true KR20070069056A (ko) 2007-07-02

Family

ID=37856605

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060133820A Withdrawn KR20070069056A (ko) 2005-12-27 2006-12-26 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US7655956B2 (enExample)
EP (1) EP1804302B1 (enExample)
JP (1) JP5073946B2 (enExample)
KR (1) KR20070069056A (enExample)
TW (1) TW200737551A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101143473B1 (ko) * 2010-05-06 2012-05-08 (주) 이피웍스 웨이퍼 레벨 엘이디 인터포저

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169480A1 (en) * 2007-01-11 2008-07-17 Visera Technologies Company Limited Optoelectronic device package and packaging method thereof
US8647517B2 (en) 2007-07-09 2014-02-11 Nitto Denko Corporation Producing method of suspension board with circuit
DE102008006757A1 (de) * 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Bauelement
JP5359045B2 (ja) * 2008-06-18 2013-12-04 日亜化学工業株式会社 半導体装置およびその製造方法
US8058664B2 (en) * 2008-09-26 2011-11-15 Bridgelux, Inc. Transparent solder mask LED assembly
US9252336B2 (en) 2008-09-26 2016-02-02 Bridgelux, Inc. Multi-cup LED assembly
US8513119B2 (en) 2008-12-10 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bump structure having tapered sidewalls for stacked dies
US20100171197A1 (en) 2009-01-05 2010-07-08 Hung-Pin Chang Isolation Structure for Stacked Dies
US8791549B2 (en) 2009-09-22 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside interconnect structure connected to TSVs
US8466059B2 (en) 2010-03-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer interconnect structure for stacked dies
TWI456798B (zh) * 2010-04-23 2014-10-11 璨圓光電股份有限公司 發光裝置之製造方法
CN102376848A (zh) * 2010-08-27 2012-03-14 璨圆光电股份有限公司 发光装置的制造方法
JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
US8900994B2 (en) 2011-06-09 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for producing a protective structure
US8952402B2 (en) 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
CN104241499A (zh) * 2014-06-25 2014-12-24 中国科学院微电子研究所 一种倒装芯片塑封结构及制造方法
US9595642B2 (en) 2015-06-29 2017-03-14 Point Engineering Co., Ltd. Chip substrate comprising a plated layer and chip package using the same
DE102015111910A1 (de) * 2015-07-22 2017-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verbund von optoelektronischen Bauelementen und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2018113922A1 (en) * 2016-12-20 2018-06-28 Osram Opto Semiconductors Gmbh Light emitting element with an optoelectronic semiconductor chip

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3329716B2 (ja) 1997-12-15 2002-09-30 日亜化学工業株式会社 チップタイプｌｅｄ
JP2001296310A (ja) * 2000-04-18 2001-10-26 Koji Ono 光センサおよびその製造方法
JP3614776B2 (ja) * 2000-12-19 2005-01-26 シャープ株式会社 チップ部品型ｌｅｄとその製造方法
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
JP3707688B2 (ja) * 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
TW546800B (en) * 2002-06-27 2003-08-11 Via Tech Inc Integrated moduled board embedded with IC chip and passive device and its manufacturing method
JP4182783B2 (ja) * 2003-03-14 2008-11-19 豊田合成株式会社 Ｌｅｄパッケージ
JP4238681B2 (ja) * 2003-09-17 2009-03-18 豊田合成株式会社 発光装置
US20080025030A9 (en) * 2003-09-23 2008-01-31 Lee Kong W Ceramic packaging for high brightness LED devices
WO2005031882A1 (ja) * 2003-09-30 2005-04-07 Kabushiki Kaisha Toshiba 発光装置
KR100586944B1 (ko) * 2003-12-26 2006-06-07 삼성전기주식회사 고출력 발광다이오드 패키지 및 제조방법
JP2007123438A (ja) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd 蛍光体板及びこれを備えた発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101143473B1 (ko) * 2010-05-06 2012-05-08 (주) 이피웍스 웨이퍼 레벨 엘이디 인터포저

Also Published As

Publication number Publication date
TW200737551A (en) 2007-10-01
US20070145400A1 (en) 2007-06-28
EP1804302A2 (en) 2007-07-04
JP5073946B2 (ja) 2012-11-14
US7655956B2 (en) 2010-02-02
JP2007180204A (ja) 2007-07-12
EP1804302A3 (en) 2011-06-29
EP1804302B1 (en) 2016-03-09

Similar Documents

Publication Publication Date Title
KR20070069056A (ko) 반도체 장치 및 그 제조 방법
US8357552B2 (en) Light emitting diode chip, and methods for manufacturing and packaging the same
CN102637784B (zh) 发光二极管封装基板及其制作方法
KR100344833B1 (ko) 반도체 패키지 및 그의 제조방법
US20100001305A1 (en) Semiconductor devices and fabrication methods thereof
CN102263194A (zh) 半导体封装与制造半导体封装的方法
US8178977B2 (en) Semiconductor device and method of manufacturing the same
KR20050034936A (ko) 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
JP7267767B2 (ja) 半導体装置および半導体装置の製造方法
KR20120077876A (ko) 이종 기판 접합 구조 및 방법
JP2007288050A (ja) 半導体装置および半導体装置の製造方法
JP7025948B2 (ja) 半導体装置および半導体装置の製造方法
TWI591764B (zh) 晶片封裝體及其製造方法
CN113257964B (zh) 微led芯片及其封装方法、电子装置
US20190214555A1 (en) Semiconductor device, and method for manufacturing the same
US7189962B2 (en) Semiconductor relay apparatus and wiring board fabrication method
JP5038631B2 (ja) 発光装置
JP7201296B2 (ja) 半導体装置およびその製造方法
JP2007027381A (ja) 半導体装置及び電子装置
JP7252386B2 (ja) 半導体装置および半導体装置の製造方法
JP2005269627A (ja) 半導体リレー装置およびその配線基板の製造方法
KR20120118363A (ko) 이미지 센서용 웨이퍼 레벨 패키지 및 그 제조방법
KR20020086000A (ko) 인쇄회로기판 및 그 제조방법
KR101204428B1 (ko) Ｓｏｉ 웨이퍼를 이용한 발광 다이오드 패키지 제조 방법
JP6732586B2 (ja) Ｌｅｄパッケージ

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000