WO2005031882A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- WO2005031882A1 WO2005031882A1 PCT/JP2004/014686 JP2004014686W WO2005031882A1 WO 2005031882 A1 WO2005031882 A1 WO 2005031882A1 JP 2004014686 W JP2004014686 W JP 2004014686W WO 2005031882 A1 WO2005031882 A1 WO 2005031882A1
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- WIPO (PCT)
- Prior art keywords
- light emitting
- substrate
- light
- emitting device
- emitting element
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 103
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 47
- 238000001465 metallisation Methods 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
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- 229910052751 metal Inorganic materials 0.000 description 16
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
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- 230000031700 light absorption Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
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- 241000430525 Aurinia saxatilis Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Definitions
- the present invention relates to a light emitting device in which a light emitting element such as a light emitting diode (LED: Light Emitting Diode) is mounted on the surface of an insulating substrate.
- a light emitting element such as a light emitting diode (LED: Light Emitting Diode) is mounted on the surface of an insulating substrate.
- the present invention relates to a light emitting device capable of flowing a larger current, and having high light emission efficiency and capable of greatly increasing luminance.
- a light-emitting diode (hereinafter also referred to as an LED chip) is a light-emitting element that acts as a light source when a voltage is applied, and is formed by the recombination of electrons and holes near the contact surface (pn junction) between two semiconductors. It is a light-emitting element using light that emits light. This light-emitting element is small and has high conversion efficiency of electric energy into light, so it is widely used as home appliances, illuminated operation switches, and LED displays.
- a light bulb using a filament unlike a light bulb using a filament, it is a conductive element that does not break the ball, has excellent initial drive characteristics, and has excellent durability against vibration and repeated ⁇ / ⁇ FF operation. It is also used as a backlight for surface devices such as. In particular, since it is possible to obtain bright and bright colors without being affected by sunlight, its use is expected to expand to display devices installed outdoors, traffic display devices, traffic signals, etc. .
- the light emitting device 1 includes a ceramic package 3 having a conductive wiring 2 disposed therein and having a concave opening, and a light emitting element electrically connected to the conductive wiring 2 via a bonding wire 4 in the concave opening.
- LED chip 5 a first metal layer 6 and a second metal layer 7 formed on the side wall of the concave opening, and a resin mold 8 for sealing the concave opening. I have.
- the first metal layer 6 provided in the concave opening enhances the adhesion to the ceramic package 3 and the light from the LED chip 5 is reflected by the second metal layer 7. Optical loss and reduce contrast It is possible to improve the strike.
- Ceramic box package equipped with LED chips are made of alumina (A 1 2 0 3) having a low thermal conductivity ceramics material mainly composed of, also the LED chip Since the thermal conductivity of the resin mold to be sealed was also low, there was a fatal drawback in that heat dissipation was extremely poor. Therefore, when a high voltage and a high current are applied, the LED chip will be destroyed due to heat generation. Therefore, the voltage that can be applied to the LED chip is low, and the current value is also limited to about several tens of milliamps.
- the required light emission luminance was also small, so that the conventional light emitting device was used without a large obstacle in practical use even with the amount of current.
- the specific application range of LED light-emitting devices has been expanded in recent years, it is possible to achieve a structure that can increase the light emission luminance with higher output and the amount of current flowing to about several A. Is a technical challenge.
- the conventional light emitting device as shown in FIG. 4 since the LED chip and the conductor wiring are electrically connected using the wire bonding method, the portion where the bonding wire rises projects in the thickness direction. In addition, a large electrode area is required to connect the ends of the bonding wires, and there is a problem that the LED package including the wiring structure becomes large.
- the present invention has been made to solve the above-described conventional problems, and can be formed in a small size, has excellent heat dissipation, can flow a larger current, has high luminous efficiency, and has high luminance. It is an object of the present invention to provide a light emitting device capable of greatly increasing the light emitting device. Disclosure of the invention
- the present invention provides a light emitting device in which a light emitting element is mounted on the surface of a co-fired substrate made of aluminum nitride, wherein the surface of the aluminum nitride substrate on which the light emitting element is mounted is 0.3 mR.
- a Metal-deposited film with a reflectance of 90% or more of light emitted from the light emitting element is formed on the surface of the aluminum nitride substrate surrounding the light emitting element, while being mirror-polished to have a surface roughness of not more than a.
- a via hole is formed through the aluminum nitride substrate on which the light emitting element is mounted and penetrates the front and back surfaces to allow the light emitting element to conduct from the back surface.
- the metal deposition film is made of aluminum or silver. Further, in addition to mounting an LED chip as the light emitting element, it is preferable that at least one type of peripheral component such as a diode for preventing reverse current, a resistor, and a semiconductor is mounted on an aluminum nitride substrate.
- the surface roughness of the aluminum nitride substrate on which the light emitting element is mounted is 0.1 imRa or less.
- the light emitting element is mounted on an aluminum nitride substrate by a flip chip method.
- a cofire substrate made of aluminum nitride (A 1 N) having a thermal conductivity as the ceramic substrate (LED package) on which the LED chip is mounted.
- a 1 N aluminum nitride
- the use of an aluminum nitride substrate with high thermal conductivity greatly enhances the heat dissipation of the light-emitting device, increases the current-carrying capacity, and allows a large current to flow. It is possible to increase
- the reflectance on the polished surface increases, and light emitted from the bonding surface side of the light-emitting element is effectively reflected on the substrate surface, and the light emission intensity (Brightness) can be substantially increased.
- the surface roughness of the mirror-polished surface is 0.3 / imRa or less based on the arithmetic average roughness (Ra) specified in Japanese Industrial Standards (JISB0601). If the surface roughness is increased so as to exceed 0.3 / zmRa, irregular reflection or absorption of light emission on the polished surface is likely to occur, and the light emission intensity tends to decrease. For this reason, the surface roughness of the mirror-polished surface is set to 0.3 / zmRa or less, but by setting the surface roughness to 0.1 mRa or less, the reflectance of light emission can be further increased.
- the metal deposited film having a reflectance of 90% or more is preferably made of aluminum or silver. This metal deposited film is formed to have a thickness of about 1 to 5 xm by a chemical vapor deposition method (CVD method) or a sputtering method. The reflectance is given by the ratio of the emission intensity of the reflected light to the emission intensity of the incident light.
- At least one type of peripheral component such as a diode for preventing reverse current, a resistor, and a semiconductor device is mounted, so that the The component mounting density can be increased, and the light emitting device can be formed more compact.
- the via hole is formed through the aluminum nitride substrate on which the light emitting element is mounted and penetrates the surface and the back surface to conduct the light emitting element from the back surface
- the light emitting element is nitrided by the flip chip method. It can be mounted on an aluminum substrate. That is, a metal bump such as a solder bump is formed at the connection end of a light emitting element such as an LED chip, and this bump is connected to a conductive wiring arranged on the back surface of the substrate via a via hole and a land provided at the end of the wiring conductor. Wiring by the face-down method is possible.
- the electrodes can be taken out from an arbitrary position on the surface of the light emitting element, so that the light emitting element and the wiring conductor can be connected in the shortest distance, and the number of electrodes is increased.
- the size of the LED chip as a light emitting element does not increase, and ultra-thin mounting is also possible.
- a white resist film is applied to a portion where the surface of the aluminum nitride substrate is exposed except a region where the metal deposition film is formed.
- the metal deposited film has a function of effectively reflecting light emitted from the light emitting element, and also functions as a conductive layer for supplying power to the light emitting element. Therefore, the +-conductive layer is divided Therefore, a gap where a metal deposition film is not formed between conductive layer patterns is inevitably formed immediately below the light emitting device. Also, since the area of the metal deposition film formation area is usually smaller than the surface area of the aluminum nitride substrate, the area where the metal deposition film is not necessarily formed on the periphery of the aluminum nitride substrate, that is, the area where the aluminum nitride substrate is exposed, is inevitable. It is formed.
- the ratio of the emitted light escaping to the back side through the aluminum nitride substrate from an area or a gap where the metal deposition film is not formed increases, so that the emitted light is emitted to the front side.
- the intensity of the emitted light is reduced. This tendency is remarkable because the transparency of the A 1 N substrate increases as the purity of the aluminum nitride substrate is increased in order to increase the thermal conductivity.
- the color of the resist film must be white.
- the resist film is made of a solder resist ink and is formed by a screen printing method.
- This solder resist ink is a heat-resistant covering member to be applied to a specific area such as a printed wiring board or the like, and is a covering material that prevents solder from attaching to areas other than areas where solder bumps and the like are to be formed. Therefore, by forming the resist film from solder-resist ink, the bumps connecting the flip chips can be effectively prevented from bleeding and short-circuiting between the conductive layer patterns, and the resist film can be screen-printed. Can be formed efficiently. Brief Description of Drawings
- FIG. 1 is a sectional view showing one embodiment of a light emitting device according to the present invention.
- FIG. 2 is a plan view of the light emitting device shown in FIG.
- FIG. 3 is a graph showing a relationship between a supplied current value and a luminous intensity in the light emitting devices according to Example 1 and Comparative Examples 1 and 2.
- FIG. 4 is a cross-sectional view showing a configuration example of a conventional light emitting device.
- FIGS. 5 (a;) and (b) are plan views and cross-sectional views each showing a configuration example of a light emitting device having a resist film formed thereon.
- FIG. 6 (a) and 6 (b) are a plan view and a cross-sectional view, respectively, showing a configuration example of a light emitting device without forming a resist film.
- FIG. 7 is a graph showing a relationship between a supplied current value and a luminous intensity in the light emitting device shown in FIGS. 5 and 6.
- Alumina (A 1 2 0 3) substrate for beauty Comparative Example aluminum (A 1 N) substrate nitridation Oyo for each example has been prepared by co-firing method, penetrating in the thickness direction of the substrate A via hole is formed, and a land is formed at the end of the via hole on the back surface side of the substrate as a terminal conductor portion for joining a lead of a component.
- the surface of aluminum nitride (A 1 N) substrate and alumina (A 1 2 0 3) LED chip as a light emitting element of the substrate is mounted is 0. 1 ⁇ 0. 3 mR a, as shown in Table 1 Mirror polishing was performed to have a surface roughness. Further, a metal vapor-deposited film made of silver (Ag) or aluminum (A 1) having a thickness shown in Table 1 was formed on a substrate surface around an LED chip as a light emitting element by a chemical vapor deposition method.
- Comparative Example 1 an epoxy resin substrate was used, and a metal deposition film was not formed.
- Comparative Example 2-3 having a low thermal conductivity of alumina (A l 2 ⁇ 3) is also of forming a metal deposition film made of A g or A 1 on the substrate surface near the chip mounting portion of the substrate.
- the surface roughness of the LED chip mounting surface was made larger than the value specified in the present invention by polishing lightly enough to remove the deposits remaining on the substrate surface after sintering. Except for adjustment, it was prepared in the same process as in Example 1.
- a blue light-emitting LED chip with the same specifications was mounted on the surface of each of the above-mentioned substrates, a current-carrying terminal was bonded to the land on the back (back) side of the substrate, and wiring was connected so as to energize the LED chip via holes. .
- a yellow light-emitting phosphor (YAG) so as to cover the mounted LED chip, light-emitting devices according to Examples and Comparative Examples that emit white light were manufactured.
- the light-emitting devices 10 include an aluminum nitride (A 1 N) substrate 11 having a high thermal conductivity and an A 1 N substrate.
- a blue light emitting LED chip 12 mounted on the surface of 1
- a yellow light emitting phosphor 13 mounted on the surface of the LED chip 1 2 and a metal formed on the surface of the A 1 N substrate 11 1
- a vapor deposition film 14 a peer hole 15 formed so as to penetrate the A 1 N substrate 11 in the thickness direction, and a land 16 formed at an end of the peer hole 15 on the back side of the substrate.
- the A 1 N substrate 11 has a structure in which a current-carrying terminal is joined to a land 16 on the back (rear) side of the A 1 N substrate 11, and wiring is connected so as to supply current to the LED chip 12 via a via hole 15.
- the specifications of each substrate material type, thickness, thermal conductivity), the surface roughness of the LED chip mounting surface, and the specifications of the metal deposition film (type , Thickness, and light reflectance), and gradually increasing the amount of current to each LED chip, and measuring the maximum current value in a range where the LED chip can emit light stably without being destroyed.
- the maximum emission intensity of each light emitting device was measured, and the results shown in Table 1 were obtained.
- the emission intensity was relatively shown as alumina (A l 2 ⁇ 3) 1 100% the emission intensity of the light emitting device according to Comparative Example 2 using the substrate (reference value).
- the substrate (LED package) on which the blue light-emitting LED chip 12 is mounted has a thermal conductivity of aluminum nitride (A 1 N).
- a 1 N aluminum nitride
- the surface on which the LED chip was mounted was mirror-polished, and a predetermined metal deposition film was formed on the surface of the A 1 N substrate 11, the heat radiation t was improved.
- the maximum current value that can be energized can be greatly increased, and the luminous intensity can be dramatically increased.
- FIG. 3 is a graph showing a relationship between a supplied current value and luminous intensity in the light emitting devices according to Example 1 and Comparative Examples 1 and 2.
- the light emitting device according to Example 1 using the aluminum nitride two ⁇ beam (A 1 N) substrate 1 1, a resin substrate or alumina (A 1 2 0 3) using the substrate
- the maximum current value capable of conducting electricity can be greatly increased, and the luminous intensity can be drastically increased.
- a cofire substrate (a co-firing substrate) of aluminum nitride (A 1 N) having high thermal conductivity is used.
- a 1 N aluminum nitride
- the surface of the A 1 plate 11 on which the blue light emitting LED chip 12 as a light emitting element is mounted is mirror-polished, the reflectance on the polished surface increases, and the bonding surface of the LED chip 12 is The light emitted from the side is effectively reflected to the substrate surface side, and the light emission intensity (luminance) can be substantially increased.
- a via hole 15 is formed through the front and back surfaces of the aluminum nitride substrate 11 on which the £ 0 chip 12 is mounted to allow conduction from the back surface to the LED chip 12. Electric current is supplied from the back surface of the aluminum nitride substrate 11 to the LED chip 12 on the front side via the via hole 15, so it is necessary to connect wiring by wire bonding on the front side of the substrate 11.
- the wiring structure is simplified and the bonding wire does not protrude in the thickness direction. Can be formed thin and small.
- the LED chip 1 2 is connected by a flip-chip method by a face-down method. Becomes Kakura. According to the face-down wiring structure, the electrodes can be taken out from an arbitrary position on the surface of the LED chip 12, so that the LED chip 12 and the distribution conductor can be connected in the shortest distance. Furthermore, even if the number of electrodes increases, the size of the LED chip as a light emitting element does not increase, and ultra-thin mounting becomes possible.
- the gap (inter-pattern gap) 17 formed between the metal-deposited films 14 and 14 serving as the conductive layers in the light emitting device prepared in Example 1 was formed.
- a white solder resist ink was applied by screen printing to form a white resist film 18.
- an LED chip 12 as a light-emitting element was mounted and fixed on the metal vapor-deposited film 14 via the flip-chip bump 19 to manufacture a light-emitting device according to Example 25.
- the gaps 17 formed between the metal-deposited films 14 and 14 were the same as those in the above-described Example 25 except that no white resist film was formed. Then, the LED chip 12 was mounted and fixed on the gold dust deposition film 14 via the flip chip bumps 19 to produce a light emitting device according to Comparative Example 12.
- the white light-emitting device according to Example 25 in which the white resist film 18 was formed in the gap 17 formed in the metal-deposited films 14 and 14 ft had a white color. Due to the reflection and shielding effects of the resist film 18, the diffusion of light in the direction of the back surface of the A 1 N substrate is effectively suppressed, and the light emission intensity in the rated current range is 28 It was proved that it could be improved by about 32%.
- the light emitting device having the above configuration, as a substrate (LED package) on which the LED chip is mounted, a co-fired substrate of aluminum nitride (A 1 N) having high thermal conductivity (co-fired substrate) Since the light emitting device is used, the heat radiation of the light emitting device is greatly improved, the current limit is increased, and a large current can be flowed, so that the light emission luminance can be greatly increased.
- a 1 N aluminum nitride
- the reflectance on the polished surface increases, and light emitted from the bonding surface side of the light-emitting element is effectively reflected on the substrate surface side, and the light emission intensity increases. (Brightness) can be substantially increased.
- the light reflection intensity can be increased. it can.
- a via hole is formed through the aluminum nitride substrate on which the light emitting element is mounted to penetrate the front and back surfaces of the light emitting element to allow conduction from the back surface to the light emitting element. It is not necessary to connect wiring on the front side of the substrate by wire bonding because it is made to the light emitting element on the front side through the interface, simplifying the wiring structure and not protruding in the thickness direction of the bonding wire Therefore, the light emitting device can be formed thin and small.
- the light emitting element can be wired by a flip-chip method by a face-down method.
- this face-down wiring structure it is possible to take out the electrode from an arbitrary position on the surface of the light emitting element, so that the light emitting element and the wiring conductor can be connected in the shortest distance, and the number of electrodes is small. Even if the number increases, the size of the LED chip as a light emitting element does not increase, and ultra-thin mounting becomes possible.
- the light reflection intensity is further increased. It is possible to increase.
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Abstract
Description
Claims
Priority Applications (3)
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US10/572,595 US8610145B2 (en) | 2003-09-30 | 2004-09-29 | Light emitting device |
JP2005514318A JP4817845B2 (ja) | 2003-09-30 | 2004-09-29 | 発光装置の製造方法 |
EP04773617.8A EP1670073B1 (en) | 2003-09-30 | 2004-09-29 | Light emitting device |
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JP2003341016 | 2003-09-30 | ||
JP2003-341016 | 2003-09-30 |
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WO2005031882A1 true WO2005031882A1 (ja) | 2005-04-07 |
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US (1) | US8610145B2 (ja) |
EP (1) | EP1670073B1 (ja) |
JP (2) | JP4817845B2 (ja) |
KR (1) | KR100808705B1 (ja) |
CN (1) | CN100442551C (ja) |
TW (1) | TWI253767B (ja) |
WO (1) | WO2005031882A1 (ja) |
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Also Published As
Publication number | Publication date |
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KR20060083984A (ko) | 2006-07-21 |
EP1670073A1 (en) | 2006-06-14 |
US20070200128A1 (en) | 2007-08-30 |
TWI253767B (en) | 2006-04-21 |
EP1670073B1 (en) | 2014-07-02 |
JP2007266647A (ja) | 2007-10-11 |
KR100808705B1 (ko) | 2008-02-29 |
JPWO2005031882A1 (ja) | 2006-12-07 |
EP1670073A4 (en) | 2008-07-02 |
CN100442551C (zh) | 2008-12-10 |
CN1860620A (zh) | 2006-11-08 |
JP4818215B2 (ja) | 2011-11-16 |
US8610145B2 (en) | 2013-12-17 |
TW200522394A (en) | 2005-07-01 |
JP4817845B2 (ja) | 2011-11-16 |
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