JP2007266647A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2007266647A JP2007266647A JP2007189139A JP2007189139A JP2007266647A JP 2007266647 A JP2007266647 A JP 2007266647A JP 2007189139 A JP2007189139 A JP 2007189139A JP 2007189139 A JP2007189139 A JP 2007189139A JP 2007266647 A JP2007266647 A JP 2007266647A
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- light emitting
- light
- emitting device
- aluminum nitride
- emitting diode
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- 239000000758 substrate Substances 0.000 claims abstract description 113
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 230000003746 surface roughness Effects 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 19
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000005304 joining Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】窒化アルミニウム基板11の表面に発光ダイオード12が搭載された発光装置10であり、上記窒化アルミニウム基板11の発光ダイオード12が搭載される表面が0.3μmRa以下の表面粗さを有すると共に、上記窒化アルミニウム基板11の発光ダイオード12搭載面側には発光ダイオード12からの発光の反射率が90%以上であるアルミニウムまたは銀から成る反射用金属層14を有し、上記発光ダイオード12が搭載される窒化アルミニウム基板11の表面と裏面とを貫通し発光ダイオード12に裏面から導通させるためのビアホール15が形成されていることを特徴とする発光装置10である。
【選択図】 図1
Description
各実施例用および比較例用の基板として、表1に示すような厚さおよび熱伝導率を有する窒化アルミニウム(AlN)基板,エポキシ樹脂基板およびアルミナ(Al2O3)基板を多数用意した。各実施例用の窒化アルミニウム(AlN)基板および比較例用のアルミナ(Al2O3)基板は、同時焼成法によって製造されたものであり、基板の厚さ方向に貫通するビアホールが形成されていると共に、ビアホールの基板裏面側の端部には部品のリードを接合するための端子導体部分としてのランドが形成されている。
図5(a)、(b)で示すように、実施例1で調製した発光装置で導電層となる金属蒸着膜14、14間に形成される隙間(パターン間ギャップ)17に、白色のソルダーレジストインクをスクリーン印刷によって塗布印刷して白色レジスト膜18を形成した。しかる後に、フリップチップ用バンプ19を介して発光素子としてのLEDチップ12を金属蒸着膜14上に搭載固定することにより、実施例25に係る発光装置を製造した。
一方、図6(a)、(b)で示すように、金属蒸着膜14、14間に形成される隙間17に、白色レジスト膜を形成しない点以外は、上記実施例25と同様に処理し、フリップチップ用バンプ19を介してLEDチップ12を金属蒸着膜14上に搭載固定することにより、比較例12に係る発光装置を製造した。
2 導体配線
3 セラミックスパッケージ
4 ボンディングワイヤ
5 LEDチップ(発光素子)
6,7 金属層
8 樹脂モールド
11 窒化けい素基板(AlN基板)
12 発光素子(青色発光LEDチップ)
13 黄色発光蛍光体(YAG)
14 金属蒸着膜、反射用金属層(Ag蒸着膜,Al蒸着膜)
15 ビアホール
16 ランド(端子導体部分)
Claims (12)
- 窒化アルミニウム基板の表面に発光ダイオードが搭載された発光装置であり、上記窒化アルミニウム基板の発光ダイオードが搭載される表面が0.3μmRa以下の表面粗さを有すると共に、上記窒化アルミニウム基板の発光ダイオード搭載面側には発光ダイオードからの発光の反射率が90%以上であるアルミニウムまたは銀から成る反射用金属層を有し、上記発光ダイオードが搭載される窒化アルミニウム基板の表面と裏面とを貫通し発光ダイオードに裏面から導通させるためのビアホールが形成されていることを特徴とする発光装置。
- 前記反射用金属層が発光ダイオードに給電する導体層としても機能していることを特徴とする請求項1記載の発光装置。
- 発光ダイオードへの通電可能な最大電流値が1100mA以上であることを特徴とする請求項1または請求項2に記載の発光装置。
- 前記発光ダイオードを覆うように蛍光体を装着することにより、前記発光装置が白色光を発することを特徴とする請求項1ないし3のいずれか1項に記載の発光装置。
- 前記発光ダイオードの他に逆電流防止用のダイオード、抵抗、サーミスタの少なくとも1種の周辺部品が前記窒化アルミニウム基板に搭載されていることを特徴とする請求項1ないし請求項4のいずれか1項に記載の発光装置。
- 前記発光ダイオードが搭載される窒化アルミニウム基板の表面粗さが0.1μmRa以下であることを特徴とする請求項1ないし請求項5のいずれか1項に記載の発光装置。
- 前記発光ダイオードが、フリップチップ法により窒化アルミニウム基板に実装されていることを特徴とする請求項1ないし請求項6のいずれか1項に記載の発光装置。
- 前記発光ダイオードは金属バンプを介して通電配線と接続されていることを特徴とする請求項7記載の発光装置。
- 前記反射用金属層が形成されている領域以外で窒化アルミニウム基板の表面が露出している部位に白色のレジスト膜が塗布されていることを特徴とする請求項1ないし請求項8のいずれか1項に記載の発光装置。
- 前記レジスト膜がソルダーレジストインクから成り、スクリーン印刷法で形成されていることを特徴とする請求項9記載の発光装置。
- 請求項1ないし請求項10のいずれか1項に記載の発光装置を用いたことを特徴とする表示装置。
- 前記表示装置が家電製品、自動車用表示装置、屋外に設置される表示装置、交通用表示装置、信号機の少なくとも1種であることを特徴とする請求項11記載の表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007189139A JP4818215B2 (ja) | 2003-09-30 | 2007-07-20 | 発光装置 |
Applications Claiming Priority (3)
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JP2003341016 | 2003-09-30 | ||
JP2003341016 | 2003-09-30 | ||
JP2007189139A JP4818215B2 (ja) | 2003-09-30 | 2007-07-20 | 発光装置 |
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JP2005514318A Division JP4817845B2 (ja) | 2003-09-30 | 2004-09-29 | 発光装置の製造方法 |
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Publication Number | Publication Date |
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JP2007266647A true JP2007266647A (ja) | 2007-10-11 |
JP4818215B2 JP4818215B2 (ja) | 2011-11-16 |
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JP2005514318A Expired - Lifetime JP4817845B2 (ja) | 2003-09-30 | 2004-09-29 | 発光装置の製造方法 |
JP2007189139A Expired - Lifetime JP4818215B2 (ja) | 2003-09-30 | 2007-07-20 | 発光装置 |
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JP2005514318A Expired - Lifetime JP4817845B2 (ja) | 2003-09-30 | 2004-09-29 | 発光装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8610145B2 (ja) |
EP (1) | EP1670073B1 (ja) |
JP (2) | JP4817845B2 (ja) |
KR (1) | KR100808705B1 (ja) |
CN (1) | CN100442551C (ja) |
TW (1) | TWI253767B (ja) |
WO (1) | WO2005031882A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010028047A (ja) * | 2008-07-24 | 2010-02-04 | Kyocera Corp | 発光装置、発光装置用基板、及び発光装置を用いた照明装置 |
WO2012073875A1 (ja) * | 2010-11-30 | 2012-06-07 | 富士フイルム株式会社 | 絶縁基板およびその製造方法 |
WO2012086724A1 (ja) * | 2010-12-24 | 2012-06-28 | 旭硝子株式会社 | 連結基板およびその製造方法、並びに素子基板、発光装置 |
US8319320B2 (en) | 2010-02-08 | 2012-11-27 | Kabushiki Kaisha Toshiba | LED module |
JP2015061030A (ja) * | 2013-09-20 | 2015-03-30 | 京セラ株式会社 | 発光装置 |
US10672947B2 (en) | 2017-08-31 | 2020-06-02 | Toyoda Gosei Co., Ltd | Method for producing light-emitting device |
Families Citing this family (62)
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US9142734B2 (en) | 2003-02-26 | 2015-09-22 | Cree, Inc. | Composite white light source and method for fabricating |
EP1620903B1 (en) | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
EP1806789B1 (en) * | 2004-10-04 | 2012-05-09 | Kabushiki Kaisha Toshiba | Lighting apparatus comprising light emitting diodes and liquid crystal display comprising the lighting apparatus |
JP4835917B2 (ja) * | 2005-10-25 | 2011-12-14 | 日立化成工業株式会社 | 発光素子搭載用配線板及びそれを使用した発光装置 |
JP5073946B2 (ja) * | 2005-12-27 | 2012-11-14 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
JP4049186B2 (ja) * | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
JP2007234968A (ja) * | 2006-03-02 | 2007-09-13 | Nichia Chem Ind Ltd | 発光装置の製造方法および発光装置 |
KR100791594B1 (ko) | 2006-08-31 | 2008-01-03 | 원광대학교산학협력단 | 방열부를 갖는 조명장치 |
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Also Published As
Publication number | Publication date |
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EP1670073B1 (en) | 2014-07-02 |
CN1860620A (zh) | 2006-11-08 |
EP1670073A4 (en) | 2008-07-02 |
TW200522394A (en) | 2005-07-01 |
EP1670073A1 (en) | 2006-06-14 |
JP4817845B2 (ja) | 2011-11-16 |
US8610145B2 (en) | 2013-12-17 |
JPWO2005031882A1 (ja) | 2006-12-07 |
TWI253767B (en) | 2006-04-21 |
CN100442551C (zh) | 2008-12-10 |
WO2005031882A1 (ja) | 2005-04-07 |
US20070200128A1 (en) | 2007-08-30 |
KR20060083984A (ko) | 2006-07-21 |
JP4818215B2 (ja) | 2011-11-16 |
KR100808705B1 (ko) | 2008-02-29 |
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