JP4960099B2 - 発光装置及びそれを用いた照明器具または液晶表示装置 - Google Patents
発光装置及びそれを用いた照明器具または液晶表示装置 Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
特許文献1:特許第3316838号公報
しかしながら、上記従来の発光装置においては、LEDチップを搭載したセラミックスパッケージがアルミナ(Al2O3)を主体とし、熱伝導率が15〜20W/m・Kであるように熱伝導率が低いセラミックス材で形成されており、またLEDチップを封止する樹脂モールドの熱伝導率も低かったために、放熱性が極めて悪い致命的な欠点があった。そのため、高電圧・高電流を印加すると、発熱によりLEDチップが破壊されてしまうことになる。したがって、LEDチップに印加できる電圧が低く、電流値も数十mA程度に制限されるため、発光輝度が低い問題点があった。
本発明は上記従来の問題点を解決するためになされたものであり、特に製造工程が簡素であり、また放熱性が優れ、より大きな電流を流すことができ、発光効率が高く輝度を大幅に増加させることが可能な発光装置を提供することを目的とする。
上記構成に係る発光装置によれば、LEDチップを搭載する基板(LED用パッケージ)として、熱伝導率が高い窒化アルミニウム(AlN)のコファイア基板(同時焼成基板)を使用しているため、発光装置の放熱性が大幅に高まり、通電限界量が増大し大電流を流すことが可能になるために、発光輝度を大幅に高くすることが可能になる。
図1は本発明に係る発光装置の一実施形態を示す断面図である。すなわち、本実施形態に係る発光装置11は、窒化アルミニウムから成る同時焼成基板(AlN多層基板)13の表面に3個の発光素子としてのLEDチップ15がフリップチップ法により実装された発光装置11であり、上記発光素子としてのLEDチップ15からの発光を正面方向に反射する傾斜面14を有するコバール製のリフレクター16が、上記LEDチップ15の周囲を取り囲むように窒化アルミニウム基板13表面に半田接合されて配置されている。
図1に示すレフレクター16の傾斜面14に、さらに銀(Ag)から成る厚さ2μmの金属膜23をめっき法によって形成した点以外は実施例1と同様に処理して実施例2に係る発光装置を調製した。
図1に示すヒートシンク21を装着しない点以外は実施例1と同様に処理して実施例3に係る発光装置を調製した。
図1に示す凸部21aを有しない平板状のヒートシンク21を、貫通穴を形成しないプリント配線基板を介してAlN基板13に接合した点以外は実施例1と同様に処理して実施例4に係る発光装置を調製した。
上記実施例1〜2に係る発光装置を照明器具本体に組み付け、さらに器具本体に点灯装置を配設することにより照明器具を調製した。各照明器具は優れた放熱特性を有し、より大きな電流(LED通電可能限界量)を流すことが可能になり、発光効率が高く輝度を大幅に増加させることが可能になることが確認された。
液晶表示装置(LCD)本体と、この装置本体に実施例1〜2に係る発光装置をバックライトとして配設することにより液晶表示装置を組み立てた。各液晶表示装置(LCD)は、発光装置の基板として放熱性に優れたAlN基板を使用しているために、より大きな電流(LED通電可能限界量)を流すことが可能になり、発光効率が高く表示装置の輝度を大幅に増加させることが可能になった。
Claims (4)
- 窒化アルミニウムから成る同時焼成基板の表面に少なくとも1個の発光素子がフリップチップ法により実装された発光装置であり、上記発光素子からの発光を正面方向に反射する傾斜面を有するリフレクターが、上記発光素子の周囲を取り囲むように窒化アルミニウム基板表面に接合されており、上記リフレクターの傾斜面にアルミニウムまたは銀から成る金属膜が形成されており、上記窒化アルミニウム基板の裏面外周部に設置された電極に配線が接続されるプリント配線基板を窒化アルミニウム基板の裏面に配置し、上記プリント配線基板から窒化アルミニウム基板の内部配線層を経由して、ワイヤボンディングせずに発光素子に給電するように構成され、上記プリント配線基板は窒化アルミニウム基板の直下部に貫通穴を備える一方、この貫通穴に嵌入する凸部を有するヒートシンクが上記窒化アルミニウム基板の裏面に密着接合されていることを特徴とする発光装置。
- 請求項1記載の発光装置において、前記発光素子が搭載される窒化アルミニウム基板の表面が0.3μmRa以下の表面粗さを有するように鏡面研摩されていることを特徴とする発光装置。
- 器具本体と、器具本体に配設された請求項1または2記載の発光装置と、器具本体に配設された点灯装置とを具備していることを特徴とする照明器具。
- 液晶表示装置本体と、この装置本体に配設された請求項1または2記載の発光装置とを具備していることを特徴とする液晶表示装置。
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JP2006539258A JP4960099B2 (ja) | 2004-10-04 | 2005-09-30 | 発光装置及びそれを用いた照明器具または液晶表示装置 |
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JP2004291608 | 2004-10-04 | ||
JP2004291608 | 2004-10-04 | ||
JP2006539258A JP4960099B2 (ja) | 2004-10-04 | 2005-09-30 | 発光装置及びそれを用いた照明器具または液晶表示装置 |
PCT/JP2005/018083 WO2006038543A2 (ja) | 2004-10-04 | 2005-09-30 | 発光装置及びそれを用いた照明器具または液晶表示装置 |
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JPWO2006038543A1 JPWO2006038543A1 (ja) | 2008-05-15 |
JP4960099B2 true JP4960099B2 (ja) | 2012-06-27 |
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US (1) | US7812360B2 (ja) |
EP (1) | EP1806789B1 (ja) |
JP (1) | JP4960099B2 (ja) |
KR (1) | KR100867970B1 (ja) |
CN (1) | CN101036238B (ja) |
TW (1) | TW200616265A (ja) |
WO (1) | WO2006038543A2 (ja) |
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US20070247855A1 (en) | 2007-10-25 |
JPWO2006038543A1 (ja) | 2008-05-15 |
EP1806789A4 (en) | 2009-09-02 |
KR20070089784A (ko) | 2007-09-03 |
TW200616265A (en) | 2006-05-16 |
US7812360B2 (en) | 2010-10-12 |
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