KR20070060117A - 처리제 물질 - Google Patents

처리제 물질 Download PDF

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Publication number
KR20070060117A
KR20070060117A KR1020077008636A KR20077008636A KR20070060117A KR 20070060117 A KR20070060117 A KR 20070060117A KR 1020077008636 A KR1020077008636 A KR 1020077008636A KR 20077008636 A KR20077008636 A KR 20077008636A KR 20070060117 A KR20070060117 A KR 20070060117A
Authority
KR
South Korea
Prior art keywords
dielectric film
organosilicate glass
glass dielectric
solvent
acetate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077008636A
Other languages
English (en)
Korean (ko)
Inventor
아닐 에스. 바납
보리스 에이. 코롤레프
로저 와이. 렁
베쓰 씨. 뮤노즈
테레사 에이. 라모스
로버트 알. 로쓰
폴 쥐. 아펜
데니스 에이취. 엔디쉬
브라이언 제이. 다니엘스
아난쓰 나만
낸시 이와모토
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20070060117A publication Critical patent/KR20070060117A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Paints Or Removers (AREA)
KR1020077008636A 2004-09-15 2005-09-07 처리제 물질 Withdrawn KR20070060117A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/940,686 2004-09-15
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US11/203,558 US7915159B2 (en) 2004-09-15 2005-08-12 Treating agent materials
US11/203,558 2005-08-12

Publications (1)

Publication Number Publication Date
KR20070060117A true KR20070060117A (ko) 2007-06-12

Family

ID=36090456

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077008636A Withdrawn KR20070060117A (ko) 2004-09-15 2005-09-07 처리제 물질

Country Status (5)

Country Link
EP (1) EP1803149A2 (https=)
JP (1) JP5161571B2 (https=)
KR (1) KR20070060117A (https=)
SG (1) SG141441A1 (https=)
WO (1) WO2006033836A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376003B1 (ko) * 2012-06-25 2014-03-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다공성 유전 물질을 위한 자체 수리 프로세스

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019714B2 (ja) * 2005-01-31 2012-09-05 大陽日酸株式会社 低誘電率膜のダメージ回復法
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
US8999734B2 (en) * 2009-03-10 2015-04-07 American Air Liquide, Inc. Cyclic amino compounds for low-k silylation
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5820688B2 (ja) 2011-03-23 2015-11-24 株式会社Kri 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法
KR101847033B1 (ko) 2015-11-30 2018-04-09 김태관 은 코팅용 용액 조성물 및 이를 이용한 은 코팅 방법
JP7292020B2 (ja) * 2018-08-27 2023-06-16 東京応化工業株式会社 表面処理剤及び表面処理方法
JPWO2021176913A1 (https=) * 2020-03-04 2021-09-10

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
JP2001118842A (ja) * 1999-10-15 2001-04-27 Nec Corp 半導体装置とその製造方法
JP5307963B2 (ja) * 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
JP2002353308A (ja) * 2001-05-28 2002-12-06 Toshiba Corp 半導体装置及びその製造方法
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP2003282698A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法および半導体装置
JP4662718B2 (ja) * 2002-04-10 2011-03-30 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用途用の低金属多孔質シリカ誘電体
JP4225765B2 (ja) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
CN1839468B (zh) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376003B1 (ko) * 2012-06-25 2014-03-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다공성 유전 물질을 위한 자체 수리 프로세스
US9029171B2 (en) 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
US9806026B2 (en) 2012-06-25 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials

Also Published As

Publication number Publication date
JP5161571B2 (ja) 2013-03-13
WO2006033836A3 (en) 2006-07-27
EP1803149A2 (en) 2007-07-04
WO2006033836A2 (en) 2006-03-30
SG141441A1 (en) 2008-04-28
JP2008513552A (ja) 2008-05-01

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P11-X000 Amendment of application requested

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P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

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R18-X000 Changes to party contact information recorded

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St.27 status event code: A-2-2-P10-P22-nap-X000