JP5161571B2 - 処理剤物質 - Google Patents

処理剤物質 Download PDF

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Publication number
JP5161571B2
JP5161571B2 JP2007531317A JP2007531317A JP5161571B2 JP 5161571 B2 JP5161571 B2 JP 5161571B2 JP 2007531317 A JP2007531317 A JP 2007531317A JP 2007531317 A JP2007531317 A JP 2007531317A JP 5161571 B2 JP5161571 B2 JP 5161571B2
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JP
Japan
Prior art keywords
dielectric film
glass dielectric
silicate glass
organic silicate
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007531317A
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English (en)
Japanese (ja)
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JP2008513552A5 (https=
JP2008513552A (ja
Inventor
バナップ，アニル・エス
コロレフ，ボリス・エイ
レング，ロジャー・ワイ
ムノス，ベス・シー
ラモス，テレサ・エイ
ロス，ロバート・アール
アペン，ポール・ジー
エンディッシュ，デニス・エイチ
ダニエルズ，ブライアン・ジェイ
ナマン，アナンス
イワモト，ナンシー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2008513552A publication Critical patent/JP2008513552A/ja
Publication of JP2008513552A5 publication Critical patent/JP2008513552A5/ja
Application granted granted Critical
Publication of JP5161571B2 publication Critical patent/JP5161571B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6546—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the surface groups of the insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Paints Or Removers (AREA)
JP2007531317A 2004-09-15 2005-09-07 処理剤物質 Expired - Fee Related JP5161571B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/940,686 2004-09-15
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US11/203,558 US7915159B2 (en) 2004-09-15 2005-08-12 Treating agent materials
US11/203,558 2005-08-12
PCT/US2005/031936 WO2006033836A2 (en) 2004-09-15 2005-09-07 Treating agent materials

Publications (3)

Publication Number Publication Date
JP2008513552A JP2008513552A (ja) 2008-05-01
JP2008513552A5 JP2008513552A5 (https=) 2008-10-23
JP5161571B2 true JP5161571B2 (ja) 2013-03-13

Family

ID=36090456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007531317A Expired - Fee Related JP5161571B2 (ja) 2004-09-15 2005-09-07 処理剤物質

Country Status (5)

Country Link
EP (1) EP1803149A2 (https=)
JP (1) JP5161571B2 (https=)
KR (1) KR20070060117A (https=)
SG (1) SG141441A1 (https=)
WO (1) WO2006033836A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019714B2 (ja) * 2005-01-31 2012-09-05 大陽日酸株式会社 低誘電率膜のダメージ回復法
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
US8999734B2 (en) * 2009-03-10 2015-04-07 American Air Liquide, Inc. Cyclic amino compounds for low-k silylation
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5820688B2 (ja) 2011-03-23 2015-11-24 株式会社Kri 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法
US9029171B2 (en) * 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
KR101847033B1 (ko) 2015-11-30 2018-04-09 김태관 은 코팅용 용액 조성물 및 이를 이용한 은 코팅 방법
JP7292020B2 (ja) * 2018-08-27 2023-06-16 東京応化工業株式会社 表面処理剤及び表面処理方法
JPWO2021176913A1 (https=) * 2020-03-04 2021-09-10

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
JP2001118842A (ja) * 1999-10-15 2001-04-27 Nec Corp 半導体装置とその製造方法
JP5307963B2 (ja) * 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
JP2002353308A (ja) * 2001-05-28 2002-12-06 Toshiba Corp 半導体装置及びその製造方法
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP2003282698A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法および半導体装置
JP4662718B2 (ja) * 2002-04-10 2011-03-30 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用途用の低金属多孔質シリカ誘電体
JP4225765B2 (ja) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
CN1839468B (zh) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤

Also Published As

Publication number Publication date
WO2006033836A3 (en) 2006-07-27
KR20070060117A (ko) 2007-06-12
EP1803149A2 (en) 2007-07-04
WO2006033836A2 (en) 2006-03-30
SG141441A1 (en) 2008-04-28
JP2008513552A (ja) 2008-05-01

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