JP2008513552A5 - - Google Patents

Download PDF

Info

Publication number
JP2008513552A5
JP2008513552A5 JP2007531317A JP2007531317A JP2008513552A5 JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5 JP 2007531317 A JP2007531317 A JP 2007531317A JP 2007531317 A JP2007531317 A JP 2007531317A JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5
Authority
JP
Japan
Prior art keywords
dielectric film
glass dielectric
organic silicate
silicate glass
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007531317A
Other languages
English (en)
Japanese (ja)
Other versions
JP5161571B2 (ja
JP2008513552A (ja
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed filed Critical
Priority claimed from PCT/US2005/031936 external-priority patent/WO2006033836A2/en
Publication of JP2008513552A publication Critical patent/JP2008513552A/ja
Publication of JP2008513552A5 publication Critical patent/JP2008513552A5/ja
Application granted granted Critical
Publication of JP5161571B2 publication Critical patent/JP5161571B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007531317A 2004-09-15 2005-09-07 処理剤物質 Expired - Fee Related JP5161571B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/940,686 2004-09-15
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US11/203,558 US7915159B2 (en) 2004-09-15 2005-08-12 Treating agent materials
US11/203,558 2005-08-12
PCT/US2005/031936 WO2006033836A2 (en) 2004-09-15 2005-09-07 Treating agent materials

Publications (3)

Publication Number Publication Date
JP2008513552A JP2008513552A (ja) 2008-05-01
JP2008513552A5 true JP2008513552A5 (https=) 2008-10-23
JP5161571B2 JP5161571B2 (ja) 2013-03-13

Family

ID=36090456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007531317A Expired - Fee Related JP5161571B2 (ja) 2004-09-15 2005-09-07 処理剤物質

Country Status (5)

Country Link
EP (1) EP1803149A2 (https=)
JP (1) JP5161571B2 (https=)
KR (1) KR20070060117A (https=)
SG (1) SG141441A1 (https=)
WO (1) WO2006033836A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019714B2 (ja) * 2005-01-31 2012-09-05 大陽日酸株式会社 低誘電率膜のダメージ回復法
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
US8999734B2 (en) * 2009-03-10 2015-04-07 American Air Liquide, Inc. Cyclic amino compounds for low-k silylation
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5820688B2 (ja) 2011-03-23 2015-11-24 株式会社Kri 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法
US9029171B2 (en) * 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
KR101847033B1 (ko) 2015-11-30 2018-04-09 김태관 은 코팅용 용액 조성물 및 이를 이용한 은 코팅 방법
JP7292020B2 (ja) * 2018-08-27 2023-06-16 東京応化工業株式会社 表面処理剤及び表面処理方法
JPWO2021176913A1 (https=) * 2020-03-04 2021-09-10

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
JP2001118842A (ja) * 1999-10-15 2001-04-27 Nec Corp 半導体装置とその製造方法
JP5307963B2 (ja) * 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
JP2002353308A (ja) * 2001-05-28 2002-12-06 Toshiba Corp 半導体装置及びその製造方法
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP2003282698A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法および半導体装置
JP4662718B2 (ja) * 2002-04-10 2011-03-30 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用途用の低金属多孔質シリカ誘電体
JP4225765B2 (ja) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
CN1839468B (zh) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤

Similar Documents

Publication Publication Date Title
JP2023027033A5 (https=)
JP7452782B2 (ja) 表面処理方法およびそのための組成物
CN1296771C (zh) 在晶片处理中低电介质材料的钝化方法
JP2008513552A5 (https=)
JP2005519481A5 (https=)
JP5029686B2 (ja) シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置
JP5590364B2 (ja) フォトレジスト剥離液組成物
JP2013118347A (ja) ウェハの洗浄方法
TW200722506A (en) Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
TW200700933A (en) Immersion lithography and treatment system thereof
JP2008277748A5 (https=)
WO2006036368A3 (en) Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
JP2006520104A5 (https=)
JP2010534935A5 (https=)
JPWO1999052136A1 (ja) 配線構造体の製造方法
TW200707125A (en) Immersion lithography and treatment method thereof
WO2008081723A1 (ja) 絶縁膜の形成方法および半導体装置の製造方法
US7056824B2 (en) Electronic device manufacture
EP2015352A3 (en) Photon induced etching of copper
TW200802535A (en) Method and system for patterning a dielectric film
JPWO2015118836A1 (ja) ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品
TW200712000A (en) Method for producing porous silica and apparatus for producing thereof
JP3833176B2 (ja) フォトレジスト除去剤組成物
TW200308051A (en) Method of treatment of porous dielectric films to reduce damage during cleaning
CN1693994A (zh) 图案微细化用涂膜形成剂和使用其形成微细图案的方法