JP2008513552A5 - - Google Patents
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- JP2008513552A5 JP2008513552A5 JP2007531317A JP2007531317A JP2008513552A5 JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5 JP 2007531317 A JP2007531317 A JP 2007531317A JP 2007531317 A JP2007531317 A JP 2007531317A JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5
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- JP
- Japan
- Prior art keywords
- dielectric film
- glass dielectric
- organic silicate
- silicate glass
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 claims description 10
- 239000005368 silicate glass Substances 0.000 claims 15
- 239000011521 glass Substances 0.000 claims 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 239000012190 activator Substances 0.000 claims 5
- 230000002152 alkylating Effects 0.000 claims 5
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 5
- 238000006884 silylation reaction Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-Dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- -1 2- (Butoxyethoxy) ethyl Chemical group 0.000 description 2
- YVBCULSIZWMTFY-UHFFFAOYSA-N 4-Heptanol Natural products CCCC(O)CCC YVBCULSIZWMTFY-UHFFFAOYSA-N 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-Heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 1
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N 1-Hexanol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 1
- QUMXDOLUJCHOAY-UHFFFAOYSA-N 1-Phenylethyl acetate Chemical compound CC(=O)OC(C)C1=CC=CC=C1 QUMXDOLUJCHOAY-UHFFFAOYSA-N 0.000 description 1
- RCYIBFNZRWQGNB-UHFFFAOYSA-N 2,6-dimethylheptan-1-ol Chemical compound CC(C)CCCC(C)CO RCYIBFNZRWQGNB-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-Heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- PLHCSZRZWOWUBW-UHFFFAOYSA-N 2-methoxyethyl 3-oxobutanoate Chemical compound COCCOC(=O)CC(C)=O PLHCSZRZWOWUBW-UHFFFAOYSA-N 0.000 description 1
- FHSUFDYFOHSYHI-UHFFFAOYSA-M 3-oxopentanoate Chemical compound CCC(=O)CC([O-])=O FHSUFDYFOHSYHI-UHFFFAOYSA-M 0.000 description 1
- BKQICAFAUMRYLZ-UHFFFAOYSA-N 4-methylheptan-3-ol Chemical compound CCCC(C)C(O)CC BKQICAFAUMRYLZ-UHFFFAOYSA-N 0.000 description 1
- XBPWGAPGJXFEJQ-UHFFFAOYSA-M 5,5-dimethyl-3-oxohexanoate Chemical compound CC(C)(C)CC(=O)CC([O-])=O XBPWGAPGJXFEJQ-UHFFFAOYSA-M 0.000 description 1
- ZVHAANQOQZVVFD-UHFFFAOYSA-N 5-methylhexan-1-ol Chemical compound CC(C)CCCCO ZVHAANQOQZVVFD-UHFFFAOYSA-N 0.000 description 1
- FCOUHTHQYOMLJT-UHFFFAOYSA-N 6-methylheptan-2-ol Chemical compound CC(C)CCCC(C)O FCOUHTHQYOMLJT-UHFFFAOYSA-N 0.000 description 1
- FDXBUMXUJRZANT-UHFFFAOYSA-N 6-phenylhexan-1-ol Chemical compound OCCCCCCC1=CC=CC=C1 FDXBUMXUJRZANT-UHFFFAOYSA-N 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N Amyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N Benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N DMA Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N Ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- GXMIHVHJTLPVKL-UHFFFAOYSA-N N,N,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 description 1
- UXDAWVUDZLBBAM-UHFFFAOYSA-N N,N-Diethylbenzeneacetamide Chemical compound CCN(CC)C(=O)CC1=CC=CC=C1 UXDAWVUDZLBBAM-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N N,N-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- MBHINSULENHCMF-UHFFFAOYSA-N N,N-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 description 1
- DKLYDESVXZKCFI-UHFFFAOYSA-N N,N-diphenylacetamide Chemical compound C=1C=CC=CC=1N(C(=O)C)C1=CC=CC=C1 DKLYDESVXZKCFI-UHFFFAOYSA-N 0.000 description 1
- OYVXVLSZQHSNDK-UHFFFAOYSA-N N-methoxy-N-methylacetamide Chemical compound CON(C)C(C)=O OYVXVLSZQHSNDK-UHFFFAOYSA-N 0.000 description 1
- WOFAGNLBCJWEOE-UHFFFAOYSA-N benzyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCC1=CC=CC=C1 WOFAGNLBCJWEOE-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 1
- MDHYEMXUFSJLGV-UHFFFAOYSA-N phenethyl acetate Chemical compound CC(=O)OCCC1=CC=CC=C1 MDHYEMXUFSJLGV-UHFFFAOYSA-N 0.000 description 1
- AXLMPTNTPOWPLT-UHFFFAOYSA-N prop-2-enyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCC=C AXLMPTNTPOWPLT-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Description
本発明の一つの態様において、組成物はさらに、エチルアセトアセテート、メチルアセトアセテート、t-ブチルアセトアセテート、2-メトキシエチルアセトアセテート、アリルアセトアセテート、ベンジルアセトアセテート、ノニルアセテート、2-(2-ブトキシエトキシ) エチルアセテート、ペンチルアセテート、フェネチルアセテート、2-ブトキシエチルアセテート、2-エチルヘキシルアセテート、アルファ-メチルベンジルアセテート、ジメチルスルホキシド、N-メチル-N-メトキシアセトアミド、N,N-ジエチル-2-フェニルアセトアミド、N,N-ジメチルアセトアミド、N,N-ジエチルアセトアミド、N,N-ジフェニルアセトアミド、N,N-ジメチルプロピオンアミド、N,N-ジメチルイソブチルアミド、1,2-ジクロロベンゼン、クロロトルエン、1-ヘキサノール、2-エチル-1-ヘキサノール、5-メチル-1-ヘキサノール、6-フェニル-1-ヘキサノール、1-ヘプタノール、2-ヘプタノール、4-ヘプタノール、4-メチル-3-ヘプタノール、6-メチル-2-ヘプタノール、2,6-ジメチルヘプタノール、1-オクタノール、またはこれらの組合せを含む溶媒を含む。 In one embodiment of the invention, the composition further comprises ethyl acetoacetate, methyl acetoacetate, t-butyl acetoacetate, 2-methoxyethyl acetoacetate, allyl acetoacetate, benzyl acetoacetate, nonyl acetate, 2- (2- (Butoxyethoxy) ethyl acetate, pentyl acetate, phenethyl acetate, 2-butoxyethyl acetate, 2-ethylhexyl acetate, alpha-methylbenzyl acetate, dimethyl sulfoxide, N-methyl-N-methoxyacetamide, N, N-diethyl-2-phenyl Acetamide, N, N-dimethylacetamide, N, N-diethylacetamide, N, N-diphenylacetamide, N, N-dimethylpropionamide, N, N-dimethylisobutyramide, 1,2-dichlorobenzene, chlorotoluene, 1 -Hexanol, 2-D Lu-1-hexanol, 5-methyl-1-hexanol, 6-phenyl-1-hexanol, 1-heptanol, 2-heptanol, 4-heptanol, 4-methyl-3-heptanol, 6-methyl-2-heptanol, Including a solvent comprising 2,6-dimethylheptanol, 1-octanol, or combinations thereof.
Claims (5)
a）シリル化によって有機シリケートガラス誘電体膜のシラノール成分をアルキル化またはアリール化することのできる成分、および
b）活性化剤、
以上の成分を含む組成物。 A composition for treating an organosilicate glass dielectric film comprising:
a) a component capable of alkylating or arylating the silanol component of the organosilicate glass dielectric film by silylation; and
b) activators,
A composition comprising the above components.
b）有機シリケートガラス誘電体膜を、シリル化によってこの有機シリケートガラス誘電体膜のシラノール成分をアルキル化またはアリール化することのできる成分および活性化剤を含む組成物と接触させること；
以上の工程を含む方法。 a) forming an organic silicate glass dielectric film;
b) contacting the organosilicate glass dielectric film with a composition comprising an activator and a component capable of alkylating or arylating the silanol component of the organosilicate glass dielectric film by silylation;
A method comprising the above steps.
a）シリル化によって有機シリケートガラス誘電体膜のシラノール成分をアルキル化またはアリール化することのできる成分、および
b）活性化剤
を含む、前記方法。 A method for preventing the formation of stress-induced voids in an organic silicate glass dielectric film on a substrate, wherein the organic silicate glass dielectric film is at least one of the pre-existing carbon-containing components. The method has been subjected to at least one step of removing a portion or reducing the hydrophobicity of the organic silicate glass dielectric film, wherein the method removes at least a portion of a pre-existing carbon-containing component. Whether the organic silicate glass dielectric film is restored to at least some of the hydrophobicity of the carbon-containing component after being removed or subjected to at least one step of reducing the hydrophobicity of the organic silicate glass dielectric film Or contact with the composition at a concentration and for a time effective to increase the hydrophobicity of the organosilicate glass dielectric film Wherein, the composition this time the following ingredients:
a) a component capable of alkylating or arylating the silanol component of the organosilicate glass dielectric film by silylation; and
b) Said method comprising an activator.
a）基板上に有機シリケートガラス誘電体膜を形成すること；
b）有機シリケートガラス誘電体膜を、前もって存在している炭素含有成分の少なくとも一部を除去するかあるいは前記有機シリケートガラス誘電体膜の疎水性を低下させる少なくとも一つの工程に供すること；
c）有機シリケートガラス誘電体膜を、前もって存在している炭素含有成分の少なくとも一部を回復させるかあるいは有機シリケートガラス誘電体膜の疎水性を増大させるのに有効な濃度および時間で、組成物と接触させること、このとき前記組成物は、シリル化によって有機シリケートガラス誘電体膜のシラノール成分をアルキル化またはアリール化することのできる成分および活性化剤を含む；
以上の工程を含む、前記方法。 A method for forming a microelectronic device comprising:
a) forming an organic silicate glass dielectric film on the substrate;
b) subjecting the organic silicate glass dielectric film to at least one step of removing at least some of the pre-existing carbon-containing components or reducing the hydrophobicity of the organic silicate glass dielectric film;
c) the organic silicate glass dielectric film at a concentration and time effective to restore at least a portion of the pre-existing carbon-containing component or increase the hydrophobicity of the organic silicate glass dielectric film. Wherein the composition comprises a component capable of alkylating or arylating the silanol component of the organosilicate glass dielectric film by silylation and an activator;
The said method including the above process.
a）基板上に有機シリケートガラス誘電体膜を施すこと；
b）有機シリケートガラス誘電体膜にビアとトレンチのパターンを形成し、そして有機シリケートガラス誘電体膜を、前もって存在している炭素含有成分の少なくとも一部を除去するかあるいは前記有機シリケートガラス誘電体膜の疎水性を低下させる少なくとも一つの処理に供すること；
c）有機シリケートガラス誘電体膜を、有機シリケートガラス誘電体膜の疎水性を増大させるのに有効な濃度および時間で、処理剤組成物と接触させること、このとき処理剤組成物は、シリル化によって有機シリケートガラス誘電体膜のシラノール成分をアルキル化またはアリール化することのできる成分および活性化剤を含む；
以上の工程を含む、前記方法。 A method for forming a microelectronic device comprising:
a) applying an organic silicate glass dielectric film on the substrate;
b) forming a pattern of vias and trenches in the organic silicate glass dielectric film and removing the organic silicate glass dielectric film from at least a portion of the pre-existing carbon-containing component or said organic silicate glass dielectric Subject to at least one treatment to reduce the hydrophobicity of the membrane;
c) contacting the organosilicate glass dielectric film with the treating agent composition at a concentration and time effective to increase the hydrophobicity of the organosilicate glass dielectric film, wherein the treating agent composition is silylated A component capable of alkylating or arylating the silanol component of the organosilicate glass dielectric film by means of and an activator;
The said method including the above process.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/940,686 US8475666B2 (en) | 2004-09-15 | 2004-09-15 | Method for making toughening agent materials |
| US10/940,686 | 2004-09-15 | ||
| US11/203,558 US7915159B2 (en) | 2004-09-15 | 2005-08-12 | Treating agent materials |
| US11/203,558 | 2005-08-12 | ||
| PCT/US2005/031936 WO2006033836A2 (en) | 2004-09-15 | 2005-09-07 | Treating agent materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008513552A JP2008513552A (en) | 2008-05-01 |
| JP2008513552A5 true JP2008513552A5 (en) | 2008-10-23 |
| JP5161571B2 JP5161571B2 (en) | 2013-03-13 |
Family
ID=36090456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007531317A Expired - Fee Related JP5161571B2 (en) | 2004-09-15 | 2005-09-07 | Treatment material |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1803149A2 (en) |
| JP (1) | JP5161571B2 (en) |
| KR (1) | KR20070060117A (en) |
| SG (1) | SG141441A1 (en) |
| WO (1) | WO2006033836A2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5019714B2 (en) * | 2005-01-31 | 2012-09-05 | 大陽日酸株式会社 | Damage recovery method for low dielectric constant films |
| US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
| US7999355B2 (en) * | 2008-07-11 | 2011-08-16 | Air Products And Chemicals, Inc. | Aminosilanes for shallow trench isolation films |
| US8999734B2 (en) * | 2009-03-10 | 2015-04-07 | American Air Liquide, Inc. | Cyclic amino compounds for low-k silylation |
| JP5404361B2 (en) | 2009-12-11 | 2014-01-29 | 株式会社東芝 | Semiconductor substrate surface treatment apparatus and method |
| JP5820688B2 (en) * | 2011-03-23 | 2015-11-24 | 株式会社Kri | Solvent used for dissolving polysaccharide, molded product using the solvent, and method for producing polysaccharide derivative |
| US9029171B2 (en) * | 2012-06-25 | 2015-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self repairing process for porous dielectric materials |
| KR101847033B1 (en) | 2015-11-30 | 2018-04-09 | 김태관 | Coating solution composition for silver coating and coating method using the same |
| JP7194372B2 (en) | 2017-06-09 | 2022-12-22 | 株式会社 高秋化学 | METHOD FOR FORMING COATING OF RESIN MOLDED PRODUCT |
| JP7292020B2 (en) * | 2018-08-27 | 2023-06-16 | 東京応化工業株式会社 | Surface treatment agent and surface treatment method |
| JPWO2021176913A1 (en) * | 2020-03-04 | 2021-09-10 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448331B1 (en) * | 1997-07-15 | 2002-09-10 | Asahi Kasei Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
| US6395651B1 (en) * | 1998-07-07 | 2002-05-28 | Alliedsignal | Simplified process for producing nanoporous silica |
| JP2001118842A (en) * | 1999-10-15 | 2001-04-27 | Nec Corp | Semiconductor device and its manufacturing method |
| JP5307963B2 (en) * | 2000-06-23 | 2013-10-02 | ハネウェル・インターナショナル・インコーポレーテッド | Method for restoring hydrophobicity in dielectric films and materials |
| JP2002353308A (en) * | 2001-05-28 | 2002-12-06 | Toshiba Corp | Semiconductor device and its manufacturing method |
| US6879046B2 (en) * | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
| EP1481284A4 (en) * | 2002-03-04 | 2006-10-25 | Tokyo Electron Ltd | Method of passivating of low dielectric materials in wafer processing |
| JP2003282698A (en) * | 2002-03-22 | 2003-10-03 | Sony Corp | Method for fabricating semiconductor and the same |
| US7381441B2 (en) * | 2002-04-10 | 2008-06-03 | Honeywell International Inc. | Low metal porous silica dielectric for integral circuit applications |
| JP4225765B2 (en) * | 2002-10-31 | 2009-02-18 | 日揮触媒化成株式会社 | Method for forming low dielectric constant amorphous silica coating and low dielectric constant amorphous silica coating obtained by the method |
| JP2007508691A (en) * | 2003-10-08 | 2007-04-05 | ハネウェル・インターナショナル・インコーポレーテッド | Repair of damage in low dielectric constant dielectric materials using silylating agents |
-
2005
- 2005-09-07 SG SG200802085-1A patent/SG141441A1/en unknown
- 2005-09-07 EP EP05806419A patent/EP1803149A2/en not_active Withdrawn
- 2005-09-07 KR KR1020077008636A patent/KR20070060117A/en not_active Application Discontinuation
- 2005-09-07 JP JP2007531317A patent/JP5161571B2/en not_active Expired - Fee Related
- 2005-09-07 WO PCT/US2005/031936 patent/WO2006033836A2/en active Application Filing
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