WO2006033836A3 - Treating agent materials - Google Patents

Treating agent materials Download PDF

Info

Publication number
WO2006033836A3
WO2006033836A3 PCT/US2005/031936 US2005031936W WO2006033836A3 WO 2006033836 A3 WO2006033836 A3 WO 2006033836A3 US 2005031936 W US2005031936 W US 2005031936W WO 2006033836 A3 WO2006033836 A3 WO 2006033836A3
Authority
WO
WIPO (PCT)
Prior art keywords
treating agent
solvent
agent materials
dielectric film
organosilicate glass
Prior art date
Application number
PCT/US2005/031936
Other languages
French (fr)
Other versions
WO2006033836A2 (en
Inventor
Anil S Bhanap
Boris A Korolev
Roger Y Leung
Beth C Munoz
Teresa A Ramos
Robert R Roth
Paul G Apen
Denis H Endisch
Brian J Daniels
Ananth Naman
Nancy Iwamoto
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP05806419A priority Critical patent/EP1803149A2/en
Priority to JP2007531317A priority patent/JP5161571B2/en
Publication of WO2006033836A2 publication Critical patent/WO2006033836A2/en
Publication of WO2006033836A3 publication Critical patent/WO2006033836A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer

Abstract

A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and an optional solvent or mixture of a main solvent and a co-solvent.
PCT/US2005/031936 2004-09-15 2005-09-07 Treating agent materials WO2006033836A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05806419A EP1803149A2 (en) 2004-09-15 2005-09-07 Treating agent materials
JP2007531317A JP5161571B2 (en) 2004-09-15 2005-09-07 Treatment material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US10/940,686 2004-09-15
US11/203,558 US7915159B2 (en) 2004-09-15 2005-08-12 Treating agent materials
US11/203,558 2005-08-12

Publications (2)

Publication Number Publication Date
WO2006033836A2 WO2006033836A2 (en) 2006-03-30
WO2006033836A3 true WO2006033836A3 (en) 2006-07-27

Family

ID=36090456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/031936 WO2006033836A2 (en) 2004-09-15 2005-09-07 Treating agent materials

Country Status (5)

Country Link
EP (1) EP1803149A2 (en)
JP (1) JP5161571B2 (en)
KR (1) KR20070060117A (en)
SG (1) SG141441A1 (en)
WO (1) WO2006033836A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019714B2 (en) * 2005-01-31 2012-09-05 大陽日酸株式会社 Damage recovery method for low dielectric constant films
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
KR20110125651A (en) * 2009-03-10 2011-11-21 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Cyclic amino compounds for low-k silylation
JP5404361B2 (en) 2009-12-11 2014-01-29 株式会社東芝 Semiconductor substrate surface treatment apparatus and method
JP5820688B2 (en) 2011-03-23 2015-11-24 株式会社Kri Solvent used for dissolving polysaccharide, molded product using the solvent, and method for producing polysaccharide derivative
US9029171B2 (en) 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
KR101847033B1 (en) 2015-11-30 2018-04-09 김태관 Coating solution composition for silver coating and coating method using the same
JP7194372B2 (en) 2017-06-09 2022-12-22 株式会社 高秋化学 METHOD FOR FORMING COATING OF RESIN MOLDED PRODUCT
JP7292020B2 (en) * 2018-08-27 2023-06-16 東京応化工業株式会社 Surface treatment agent and surface treatment method
JPWO2021176913A1 (en) * 2020-03-04 2021-09-10

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002001621A2 (en) * 2000-06-23 2002-01-03 Honeywell International, Inc. Method to restore hydrophobicity in dielectric films and materials
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US20030003765A1 (en) * 2001-06-28 2003-01-02 Gibson Gerald W. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
WO2003088344A1 (en) * 2002-04-10 2003-10-23 Honeywell International, Inc. Low metal porous silica dielectric for integral circuit applications
US20030198895A1 (en) * 2002-03-04 2003-10-23 Toma Dorel Ioan Method of passivating of low dielectric materials in wafer processing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118842A (en) * 1999-10-15 2001-04-27 Nec Corp Semiconductor device and its manufacturing method
JP2002353308A (en) * 2001-05-28 2002-12-06 Toshiba Corp Semiconductor device and its manufacturing method
JP2003282698A (en) * 2002-03-22 2003-10-03 Sony Corp Method for fabricating semiconductor and the same
JP4225765B2 (en) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 Method for forming low dielectric constant amorphous silica coating and low dielectric constant amorphous silica coating obtained by the method
CN1839468B (en) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 Repairing damage to low-K dielectric materials using silylating agents

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
WO2002001621A2 (en) * 2000-06-23 2002-01-03 Honeywell International, Inc. Method to restore hydrophobicity in dielectric films and materials
US20030003765A1 (en) * 2001-06-28 2003-01-02 Gibson Gerald W. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US20030198895A1 (en) * 2002-03-04 2003-10-23 Toma Dorel Ioan Method of passivating of low dielectric materials in wafer processing
WO2003088344A1 (en) * 2002-04-10 2003-10-23 Honeywell International, Inc. Low metal porous silica dielectric for integral circuit applications

Also Published As

Publication number Publication date
EP1803149A2 (en) 2007-07-04
JP5161571B2 (en) 2013-03-13
JP2008513552A (en) 2008-05-01
WO2006033836A2 (en) 2006-03-30
SG141441A1 (en) 2008-04-28
KR20070060117A (en) 2007-06-12

Similar Documents

Publication Publication Date Title
TW200626518A (en) Treating agent materials
WO2006033836A3 (en) Treating agent materials
WO2006116348A3 (en) Compositions for medical devices containing agent combinations in controlled volumes
WO2006071401A3 (en) Asphalt release agent
EP1884533A3 (en) Bonding process
CL2004000449A1 (en) COMPOUNDS DERIVED FROM IMIDAZOL-4-IL-ETINIL-PIRIDINA, TO TREAT DISORDERS MEDIATED BY THE RECEIVER MGLUR5; COMPOUND PREPARATION PROCEDURE; PHARMACEUTICAL COMPOSITION THAT INCLUDES ONE OF THE COMPOUNDS; AND USE OF COMPOUNDS IN
TW200643623A (en) Antireflective hardmask composition and methods for using same
WO2007062306A3 (en) Methods for coating surfaces with antimicrobial agents
WO2006094848A3 (en) Aqueous paint compositions for wood
WO2006008239A3 (en) Luminescent silicon oxide flakes
WO2007086904A3 (en) Compositions for use in identification of adenoviruses
WO2005107456A3 (en) Antimicrobial silicon oxide flakes
WO2007079103A3 (en) Compositions comprising novel compounds and electronic devices made with such compositions
WO2006074394A3 (en) Heat activated sealants and foamed materials
TW200643622A (en) Antireflective hardmask composition and methods for using same
BRPI0813208A2 (en) "COATING COMPOSITION, SILICATE MODIFIED EPOXY RESIN, PROCESS FOR THE PREPARATION OF A SILICATE MODIFIED EPOXY RESIN, USE OF SILICATE MODIFIED EPOXY RESIN, SUBSTRATE COATING PROCESS AND SUBSTRATE"
WO2007016115A3 (en) 6,13-bis(thienyl)pentacene compounds
WO2005082851A3 (en) Charge transport compounds and electronic devices made with such compounds
WO2007059265A3 (en) Imagewise patterning of films and devices comprising the same
EP1953181A4 (en) Resin composition, varnish, resin film and semiconductor device
WO2009117382A3 (en) Sliding and rotating apparatus device having same
WO2005090490A3 (en) Method to use an emulsified material as a coating
WO2009026282A3 (en) Compositions for the treatment of stroke or cerebrovascular accidents with an endothelin b receptor agonist
AU2002320586A1 (en) Release agent for lignocellulosic composites
BRPI0410857A (en) method for treating depression, use of gaboxadol, and pharmaceutical composition

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2007531317

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 200580030450.4

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2005806419

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020077008636

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2005806419

Country of ref document: EP