KR20070011408A - 실리콘게르마늄을 사용한 반도체 구조 제조 방법 - Google Patents

실리콘게르마늄을 사용한 반도체 구조 제조 방법 Download PDF

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Publication number
KR20070011408A
KR20070011408A KR1020067022481A KR20067022481A KR20070011408A KR 20070011408 A KR20070011408 A KR 20070011408A KR 1020067022481 A KR1020067022481 A KR 1020067022481A KR 20067022481 A KR20067022481 A KR 20067022481A KR 20070011408 A KR20070011408 A KR 20070011408A
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South Korea
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layer
silicon
germanium
semiconductor substrate
forming
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Korean (ko)
Inventor
마리우스 케이. 오로우스키
알렉산더 엘. 바라
마리암 지. 사다카
테드 알. 화이트
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프리스케일 세미컨덕터, 인크.
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Publication of KR20070011408A publication Critical patent/KR20070011408A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020067022481A 2004-04-30 2005-04-05 실리콘게르마늄을 사용한 반도체 구조 제조 방법 Withdrawn KR20070011408A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/836,172 2004-04-30
US10/836,172 US7163903B2 (en) 2004-04-30 2004-04-30 Method for making a semiconductor structure using silicon germanium

Publications (1)

Publication Number Publication Date
KR20070011408A true KR20070011408A (ko) 2007-01-24

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KR1020067022481A Withdrawn KR20070011408A (ko) 2004-04-30 2005-04-05 실리콘게르마늄을 사용한 반도체 구조 제조 방법

Country Status (7)

Country Link
US (2) US7163903B2 (https=)
EP (1) EP1751791A4 (https=)
JP (1) JP2007535814A (https=)
KR (1) KR20070011408A (https=)
CN (1) CN100533679C (https=)
TW (1) TW200605159A (https=)
WO (1) WO2005112094A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008094745A1 (en) * 2007-01-31 2008-08-07 Freescale Semiconductor Inc. Electronic device including insulating layers having different strains and a process for forming the electronic device
US7714318B2 (en) 2005-11-08 2010-05-11 Freescale Semiconductor, Inc Electronic device including a transistor structure having an active region adjacent to a stressor layer
US8569858B2 (en) 2006-12-20 2013-10-29 Freescale Semiconductor, Inc. Semiconductor device including an active region and two layers having different stress characteristics

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* Cited by examiner, † Cited by third party
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US7163903B2 (en) * 2004-04-30 2007-01-16 Freescale Semiconductor, Inc. Method for making a semiconductor structure using silicon germanium
US7332443B2 (en) * 2005-03-18 2008-02-19 Infineon Technologies Ag Method for fabricating a semiconductor device
US7439165B2 (en) * 2005-04-06 2008-10-21 Agency For Sceince, Technology And Reasearch Method of fabricating tensile strained layers and compressive strain layers for a CMOS device
US7265004B2 (en) * 2005-11-14 2007-09-04 Freescale Semiconductor, Inc. Electronic devices including a semiconductor layer and a process for forming the same
US7560318B2 (en) * 2006-03-13 2009-07-14 Freescale Semiconductor, Inc. Process for forming an electronic device including semiconductor layers having different stresses
US7882382B2 (en) * 2006-06-14 2011-02-01 International Business Machines Corporation System and method for performing computer system maintenance and service
US7629220B2 (en) * 2006-06-30 2009-12-08 Freescale Semiconductor, Inc. Method for forming a semiconductor device and structure thereof
FR2925979A1 (fr) * 2007-12-27 2009-07-03 Commissariat Energie Atomique PROCEDE DE FABRICATION D'UN SUBSTRAT SEMICONDUCTEUR SUR ISOLANT COMPRENANT UNE ETAPE D'ENRICHISSEMENT EN Ge LOCALISE
US8211786B2 (en) 2008-02-28 2012-07-03 International Business Machines Corporation CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
JP2010182841A (ja) * 2009-02-05 2010-08-19 Sony Corp 半導体薄膜の形成方法および半導体薄膜の検査装置
US8828851B2 (en) * 2012-02-01 2014-09-09 Stmicroeletronics, Inc. Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering
CN103839891A (zh) * 2012-11-26 2014-06-04 中国科学院微电子研究所 一种半导体结构及其制造方法
FR3088481B1 (fr) * 2018-11-14 2024-06-07 Commissariat Energie Atomique Procede de fabrication d’un transistor a effet de champ a jonction alignee avec des espaceurs
CN115763222A (zh) * 2022-11-10 2023-03-07 华虹半导体(无锡)有限公司 解决选择性外基区断层的方法

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US20010003381A1 (en) * 1998-05-20 2001-06-14 Marius Orlowski Method to locate particles of a predetermined species within a solid and resulting structures
US6369438B1 (en) 1998-12-24 2002-04-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP3884203B2 (ja) 1998-12-24 2007-02-21 株式会社東芝 半導体装置の製造方法
JP3607194B2 (ja) * 1999-11-26 2005-01-05 株式会社東芝 半導体装置、半導体装置の製造方法、及び半導体基板
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
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Cited By (6)

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Publication number Priority date Publication date Assignee Title
US7714318B2 (en) 2005-11-08 2010-05-11 Freescale Semiconductor, Inc Electronic device including a transistor structure having an active region adjacent to a stressor layer
US8569858B2 (en) 2006-12-20 2013-10-29 Freescale Semiconductor, Inc. Semiconductor device including an active region and two layers having different stress characteristics
US9847389B2 (en) 2006-12-20 2017-12-19 Nxp Usa, Inc. Semiconductor device including an active region and two layers having different stress characteristics
WO2008094745A1 (en) * 2007-01-31 2008-08-07 Freescale Semiconductor Inc. Electronic device including insulating layers having different strains and a process for forming the electronic device
US7843011B2 (en) 2007-01-31 2010-11-30 Freescale Semiconductor, Inc. Electronic device including insulating layers having different strains
US8021957B2 (en) 2007-01-31 2011-09-20 Freescale Semiconductor, Inc. Process of forming an electronic device including insulating layers having different strains

Also Published As

Publication number Publication date
EP1751791A4 (en) 2010-02-03
JP2007535814A (ja) 2007-12-06
WO2005112094A3 (en) 2007-06-28
US20050245092A1 (en) 2005-11-03
US7927956B2 (en) 2011-04-19
TW200605159A (en) 2006-02-01
CN100533679C (zh) 2009-08-26
EP1751791A2 (en) 2007-02-14
CN101147243A (zh) 2008-03-19
WO2005112094A2 (en) 2005-11-24
US20070082453A1 (en) 2007-04-12
WO2005112094A9 (en) 2009-04-30
US7163903B2 (en) 2007-01-16

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