KR20060129050A - 저항 내장 바이폴라 트랜지스터 - Google Patents

저항 내장 바이폴라 트랜지스터 Download PDF

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Publication number
KR20060129050A
KR20060129050A KR1020067018390A KR20067018390A KR20060129050A KR 20060129050 A KR20060129050 A KR 20060129050A KR 1020067018390 A KR1020067018390 A KR 1020067018390A KR 20067018390 A KR20067018390 A KR 20067018390A KR 20060129050 A KR20060129050 A KR 20060129050A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
type
resistor
region
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067018390A
Other languages
English (en)
Korean (ko)
Inventor
타이라 마츠나가
Original Assignee
이사하야덴시 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이사하야덴시 가부시키가이샤 filed Critical 이사하야덴시 가부시키가이샤
Publication of KR20060129050A publication Critical patent/KR20060129050A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020067018390A 2004-04-02 2004-09-22 저항 내장 바이폴라 트랜지스터 Ceased KR20060129050A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004109640A JP2005294659A (ja) 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ
JPJP-P-2004-00109640 2004-04-02

Publications (1)

Publication Number Publication Date
KR20060129050A true KR20060129050A (ko) 2006-12-14

Family

ID=35150260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067018390A Ceased KR20060129050A (ko) 2004-04-02 2004-09-22 저항 내장 바이폴라 트랜지스터

Country Status (4)

Country Link
JP (1) JP2005294659A (enExample)
KR (1) KR20060129050A (enExample)
CN (1) CN100444401C (enExample)
WO (1) WO2005101517A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194850A (ja) * 2019-05-27 2020-12-03 イサハヤ電子株式会社 多用途抵抗付きトランジスタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247392Y2 (enExample) * 1972-12-11 1977-10-27
JP2757864B2 (ja) * 1986-07-03 1998-05-25 ローム 株式会社 半導体装置
CN1035849C (zh) * 1992-07-22 1997-09-10 天津大学 一种具有双负阻特性的负阻器件
JPH0722164B2 (ja) * 1992-09-17 1995-03-08 ローム株式会社 抵抗内蔵トランジスタ
JP2648808B2 (ja) * 1992-12-18 1997-09-03 華邦電子股▲ふん▼有限公司 ＢｉＣＭＯＳ用バイポーラトランジスタ製造法
JPH08279561A (ja) * 1995-04-07 1996-10-22 Mitsubishi Electric Corp バイポーラトランジスタ並びに該バイポーラトランジスタを用いた増幅器および集積回路
KR100258436B1 (ko) * 1996-10-11 2000-06-01 김덕중 상보형 쌍극성 트랜지스터 및 그 제조 방법
CN2275248Y (zh) * 1996-10-17 1998-02-25 东南大学 厚膜集成阻抗变换功能模块

Also Published As

Publication number Publication date
CN1926689A (zh) 2007-03-07
WO2005101517A1 (ja) 2005-10-27
CN100444401C (zh) 2008-12-17
JP2005294659A (ja) 2005-10-20

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