JP2005294659A - 抵抗内蔵バイポーラトランジスタ - Google Patents

抵抗内蔵バイポーラトランジスタ Download PDF

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Publication number
JP2005294659A
JP2005294659A JP2004109640A JP2004109640A JP2005294659A JP 2005294659 A JP2005294659 A JP 2005294659A JP 2004109640 A JP2004109640 A JP 2004109640A JP 2004109640 A JP2004109640 A JP 2004109640A JP 2005294659 A JP2005294659 A JP 2005294659A
Authority
JP
Japan
Prior art keywords
resistor
built
semiconductor substrate
type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004109640A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005294659A5 (enExample
Inventor
Taira Matsunaga
平 松永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Isahaya Electronics Corp
Original Assignee
Isahaya Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isahaya Electronics Corp filed Critical Isahaya Electronics Corp
Priority to JP2004109640A priority Critical patent/JP2005294659A/ja
Priority to KR1020067018390A priority patent/KR20060129050A/ko
Priority to CNB2004800424732A priority patent/CN100444401C/zh
Priority to PCT/JP2004/013783 priority patent/WO2005101517A1/ja
Publication of JP2005294659A publication Critical patent/JP2005294659A/ja
Publication of JP2005294659A5 publication Critical patent/JP2005294659A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004109640A 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ Pending JP2005294659A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004109640A JP2005294659A (ja) 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ
KR1020067018390A KR20060129050A (ko) 2004-04-02 2004-09-22 저항 내장 바이폴라 트랜지스터
CNB2004800424732A CN100444401C (zh) 2004-04-02 2004-09-22 电阻内置型双极晶体管
PCT/JP2004/013783 WO2005101517A1 (ja) 2004-04-02 2004-09-22 抵抗内蔵バイポーラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004109640A JP2005294659A (ja) 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
JP2005294659A true JP2005294659A (ja) 2005-10-20
JP2005294659A5 JP2005294659A5 (enExample) 2007-05-17

Family

ID=35150260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004109640A Pending JP2005294659A (ja) 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ

Country Status (4)

Country Link
JP (1) JP2005294659A (enExample)
KR (1) KR20060129050A (enExample)
CN (1) CN100444401C (enExample)
WO (1) WO2005101517A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194850A (ja) * 2019-05-27 2020-12-03 イサハヤ電子株式会社 多用途抵抗付きトランジスタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247392Y2 (enExample) * 1972-12-11 1977-10-27
JP2757864B2 (ja) * 1986-07-03 1998-05-25 ローム 株式会社 半導体装置
CN1035849C (zh) * 1992-07-22 1997-09-10 天津大学 一种具有双负阻特性的负阻器件
JPH0722164B2 (ja) * 1992-09-17 1995-03-08 ローム株式会社 抵抗内蔵トランジスタ
JP2648808B2 (ja) * 1992-12-18 1997-09-03 華邦電子股▲ふん▼有限公司 ＢｉＣＭＯＳ用バイポーラトランジスタ製造法
JPH08279561A (ja) * 1995-04-07 1996-10-22 Mitsubishi Electric Corp バイポーラトランジスタ並びに該バイポーラトランジスタを用いた増幅器および集積回路
KR100258436B1 (ko) * 1996-10-11 2000-06-01 김덕중 상보형 쌍극성 트랜지스터 및 그 제조 방법
CN2275248Y (zh) * 1996-10-17 1998-02-25 东南大学 厚膜集成阻抗变换功能模块

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194850A (ja) * 2019-05-27 2020-12-03 イサハヤ電子株式会社 多用途抵抗付きトランジスタ

Also Published As

Publication number Publication date
CN1926689A (zh) 2007-03-07
KR20060129050A (ko) 2006-12-14
WO2005101517A1 (ja) 2005-10-27
CN100444401C (zh) 2008-12-17

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