CN100444401C - 电阻内置型双极晶体管 - Google Patents

电阻内置型双极晶体管 Download PDF

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Publication number
CN100444401C
CN100444401C CNB2004800424732A CN200480042473A CN100444401C CN 100444401 C CN100444401 C CN 100444401C CN B2004800424732 A CNB2004800424732 A CN B2004800424732A CN 200480042473 A CN200480042473 A CN 200480042473A CN 100444401 C CN100444401 C CN 100444401C
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CN
China
Prior art keywords
mentioned
semiconductor substrate
impurity region
conductive
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800424732A
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English (en)
Chinese (zh)
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CN1926689A (zh
Inventor
松永平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Isahaya Electronics Corp
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Isahaya Electronics Corp
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Publication date
Application filed by Isahaya Electronics Corp filed Critical Isahaya Electronics Corp
Publication of CN1926689A publication Critical patent/CN1926689A/zh
Application granted granted Critical
Publication of CN100444401C publication Critical patent/CN100444401C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

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  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB2004800424732A 2004-04-02 2004-09-22 电阻内置型双极晶体管 Expired - Fee Related CN100444401C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP109640/2004 2004-04-02
JP2004109640A JP2005294659A (ja) 2004-04-02 2004-04-02 抵抗内蔵バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
CN1926689A CN1926689A (zh) 2007-03-07
CN100444401C true CN100444401C (zh) 2008-12-17

Family

ID=35150260

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800424732A Expired - Fee Related CN100444401C (zh) 2004-04-02 2004-09-22 电阻内置型双极晶体管

Country Status (4)

Country Link
JP (1) JP2005294659A (enExample)
KR (1) KR20060129050A (enExample)
CN (1) CN100444401C (enExample)
WO (1) WO2005101517A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020194850A (ja) * 2019-05-27 2020-12-03 イサハヤ電子株式会社 多用途抵抗付きトランジスタ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206160A (ja) * 1992-09-17 1993-08-13 Rohm Co Ltd 抵抗内蔵トランジスタ
CN1083268A (zh) * 1992-07-22 1994-03-02 天津大学 一种具有双负阻特性的负阻器件
JPH06224375A (ja) * 1992-12-18 1994-08-12 Kaho Denshi Kofun Yugenkoshi ＢｉＣＭＯＳ用バイポーラトランジスタ製造法
CN1132939A (zh) * 1995-04-07 1996-10-09 三菱电机株式会社 双极晶体管电路元件
CN2275248Y (zh) * 1996-10-17 1998-02-25 东南大学 厚膜集成阻抗变换功能模块
JP2757864B2 (ja) * 1986-07-03 1998-05-25 ローム 株式会社 半導体装置
CN1381894A (zh) * 1996-10-11 2002-11-27 三星电子株式会社 互补双极晶体管及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247392Y2 (enExample) * 1972-12-11 1977-10-27

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757864B2 (ja) * 1986-07-03 1998-05-25 ローム 株式会社 半導体装置
CN1083268A (zh) * 1992-07-22 1994-03-02 天津大学 一种具有双负阻特性的负阻器件
JPH05206160A (ja) * 1992-09-17 1993-08-13 Rohm Co Ltd 抵抗内蔵トランジスタ
JPH06224375A (ja) * 1992-12-18 1994-08-12 Kaho Denshi Kofun Yugenkoshi ＢｉＣＭＯＳ用バイポーラトランジスタ製造法
CN1132939A (zh) * 1995-04-07 1996-10-09 三菱电机株式会社 双极晶体管电路元件
CN1381894A (zh) * 1996-10-11 2002-11-27 三星电子株式会社 互补双极晶体管及其制造方法
CN2275248Y (zh) * 1996-10-17 1998-02-25 东南大学 厚膜集成阻抗变换功能模块

Also Published As

Publication number Publication date
CN1926689A (zh) 2007-03-07
KR20060129050A (ko) 2006-12-14
WO2005101517A1 (ja) 2005-10-27
JP2005294659A (ja) 2005-10-20

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Granted publication date: 20081217