KR20060009327A - 기판폴리싱장치 - Google Patents

기판폴리싱장치 Download PDF

Info

Publication number
KR20060009327A
KR20060009327A KR1020057021477A KR20057021477A KR20060009327A KR 20060009327 A KR20060009327 A KR 20060009327A KR 1020057021477 A KR1020057021477 A KR 1020057021477A KR 20057021477 A KR20057021477 A KR 20057021477A KR 20060009327 A KR20060009327 A KR 20060009327A
Authority
KR
South Korea
Prior art keywords
substrate
polishing
light
fluid
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057021477A
Other languages
English (en)
Korean (ko)
Inventor
가즈토 히로카와
순스케 나카이
신로 오타
유타카 와다
요이치 고바야시
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 에바라 세이사꾸쇼 filed Critical 가부시키가이샤 에바라 세이사꾸쇼
Publication of KR20060009327A publication Critical patent/KR20060009327A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020057021477A 2003-05-16 2004-05-13 기판폴리싱장치 Ceased KR20060009327A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2003138496 2003-05-16
JP2003138479 2003-05-16
JP2003138782 2003-05-16
JPJP-P-2003-00138496 2003-05-16
JPJP-P-2003-00138782 2003-05-16
JPJP-P-2003-00138479 2003-05-16

Publications (1)

Publication Number Publication Date
KR20060009327A true KR20060009327A (ko) 2006-01-31

Family

ID=33458361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057021477A Ceased KR20060009327A (ko) 2003-05-16 2004-05-13 기판폴리싱장치

Country Status (7)

Country Link
US (3) US20040242121A1 (https=)
EP (1) EP1641597A4 (https=)
JP (1) JP2006525878A (https=)
KR (1) KR20060009327A (https=)
CN (1) CN1791490B (https=)
TW (1) TWI338605B (https=)
WO (1) WO2004101223A1 (https=)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
KR101197826B1 (ko) * 2004-01-28 2012-11-05 가부시키가이샤 니콘 연마 패드 표면 형상 측정 장치, 연마 패드 표면 형상 측정장치의 사용 방법, 연마 패드의 원추 꼭지각의 측정 방법,연마 패드의 홈 깊이 측정 방법, cmp 연마 장치 및반도체 디바이스의 제조 방법
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
KR100568258B1 (ko) * 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
US7153191B2 (en) * 2004-08-20 2006-12-26 Micron Technology, Inc. Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods
JP2006159317A (ja) * 2004-12-03 2006-06-22 Asahi Sunac Corp 研磨パッドのドレッシング方法
US7306507B2 (en) 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window
KR101423579B1 (ko) * 2005-08-22 2014-07-25 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
JP4675803B2 (ja) * 2006-03-10 2011-04-27 東京エレクトロン株式会社 平坦化装置
US7494929B2 (en) * 2006-04-27 2009-02-24 Applied Materials, Inc. Automatic gain control
JP4745920B2 (ja) * 2006-08-28 2011-08-10 三菱重工業株式会社 放電電極、薄膜製造装置、及び太陽電池の製造方法
DE102006047207B3 (de) * 2006-10-05 2008-07-03 Fachhochschule Koblenz Optischer Drehverteiler für Lichtwellenleiter
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
KR20110120893A (ko) * 2009-01-16 2011-11-04 어플라이드 머티어리얼스, 인코포레이티드 윈도우 지지부를 가지는 폴리싱 패드 및 시스템
US8157614B2 (en) * 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
US8882560B2 (en) 2009-05-28 2014-11-11 Anki, Inc. Integration of a robotic system with one or more mobile computing devices
US9155961B2 (en) 2009-05-28 2015-10-13 Anki, Inc. Mobile agents for manipulating, moving, and/or reorienting components
US10188958B2 (en) 2009-05-28 2019-01-29 Anki, Inc. Automated detection of surface layout
WO2010138707A2 (en) 2009-05-28 2010-12-02 Anki, Inc. Distributed system of autonomously controlled toy vehicles
JP5968783B2 (ja) 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
KR101165208B1 (ko) * 2009-11-18 2012-07-16 주식회사 케이엔제이 평판디스플레이패널의 연마방법
GB2482119B (en) 2010-07-19 2013-01-23 China Ind Ltd Racing vehicle game
CN102278967A (zh) * 2011-03-10 2011-12-14 清华大学 抛光液厚度测量装置、测量方法和化学机械抛光设备
CN102221416B (zh) * 2011-03-10 2012-10-10 清华大学 抛光液物理参数测量装置、测量方法和化学机械抛光设备
US8380024B1 (en) * 2011-08-17 2013-02-19 Princetel Inc. Integrated electro-optical fluid rotary joint
JP2013222856A (ja) * 2012-04-17 2013-10-28 Ebara Corp 研磨装置および研磨方法
US10279311B2 (en) * 2012-08-21 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for operating chemical mechanical polishing process
US9079287B2 (en) * 2013-03-12 2015-07-14 Macronix International Co., Ltd. CMP polishing pad detector and system
JP6145342B2 (ja) * 2013-07-12 2017-06-07 株式会社荏原製作所 膜厚測定装置、膜厚測定方法、および膜厚測定装置を備えた研磨装置
US9966281B2 (en) * 2013-11-15 2018-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for chemical mechanical polish cleaning
TWI652735B (zh) 2014-10-09 2019-03-01 美商應用材料股份有限公司 具有內部通道的化學機械研磨墊
JP6313196B2 (ja) * 2014-11-20 2018-04-18 株式会社荏原製作所 研磨面洗浄装置、研磨装置、および研磨面洗浄装置の製造方法
JP2018508847A (ja) 2015-01-05 2018-03-29 アンキ,インコーポレイテッド 適応データ解析サービス
US9902415B2 (en) * 2016-02-15 2018-02-27 Lam Research Corporation Universal service cart for semiconductor system maintenance
CN109689295B (zh) * 2016-09-15 2021-08-06 应用材料公司 化学机械抛光智能环
KR102642988B1 (ko) * 2016-11-09 2024-03-06 삼성디스플레이 주식회사 기판 연마 장치 및 방법
CN116646279A (zh) 2017-01-05 2023-08-25 株式会社斯库林集团 基板清洗装置及基板清洗方法
JP6951229B2 (ja) * 2017-01-05 2021-10-20 株式会社Screenホールディングス 基板洗浄装置および基板洗浄方法
CN108630561B (zh) * 2017-03-15 2021-10-15 北京北方华创微电子装备有限公司 基片表面的检测装置和检测方法、传片腔室
RU173875U1 (ru) * 2017-03-17 2017-09-15 Акционерное общество "Московский вертолетный завод им. М.Л. Миля" Эталонное устройство для оценки светотехнических характеристик
JP6948868B2 (ja) * 2017-07-24 2021-10-13 株式会社荏原製作所 研磨装置および研磨方法
JP6948878B2 (ja) * 2017-08-22 2021-10-13 ラピスセミコンダクタ株式会社 半導体製造装置及び半導体基板の研磨方法
JP6974087B2 (ja) * 2017-09-14 2021-12-01 株式会社ディスコ 切削装置
CN107745330B (zh) * 2017-11-28 2024-07-05 合肥波林新材料股份有限公司 一种端面研磨装置
KR102502899B1 (ko) * 2017-12-28 2023-02-24 엔테그리스, 아이엔씨. Cmp 연마 패드 컨디셔너
CN110153872B (zh) * 2018-02-14 2021-03-26 台湾积体电路制造股份有限公司 研磨系统、晶片夹持装置及晶片的研磨方法
JP7022647B2 (ja) * 2018-05-08 2022-02-18 株式会社荏原製作所 光透過性部材、研磨パッドおよび基板研磨装置
US11878388B2 (en) * 2018-06-15 2024-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad, polishing apparatus and method of manufacturing semiconductor package using the same
JP2020001162A (ja) * 2018-06-28 2020-01-09 株式会社荏原製作所 研磨パッド積層体、研磨パッド位置決め治具、および研磨パッドを研磨テーブルに貼り付ける方法
JP7316785B2 (ja) * 2018-12-26 2023-07-28 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
US20200361052A1 (en) * 2019-05-16 2020-11-19 Micron Technology, Inc. Planarization endpoint determination
JP7638617B2 (ja) 2019-06-26 2025-03-04 株式会社荏原製作所 光学式表面監視装置の洗浄方法
JP7403998B2 (ja) * 2019-08-29 2023-12-25 株式会社荏原製作所 研磨装置および研磨方法
US11389923B2 (en) * 2020-03-12 2022-07-19 Bruker Nano, Inc. Chemical-mechanical polishing system with a potentiostat and pulsed-force applied to a workpiece
US12318881B2 (en) * 2021-03-29 2025-06-03 Ebara Corporation Substrate polishing apparatus and substrate polishing method
JP2025021626A (ja) 2023-08-01 2025-02-14 株式会社荏原製作所 研磨装置
CN117140236B (zh) * 2023-10-25 2024-01-26 苏州博宏源机械制造有限公司 一种晶圆厚度在线测量装置及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
JPH10229061A (ja) * 1997-02-13 1998-08-25 Nikon Corp 研磨量測定装置
US6142855A (en) * 1997-10-31 2000-11-07 Canon Kabushiki Kaisha Polishing apparatus and polishing method
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6454630B1 (en) * 1999-09-14 2002-09-24 Applied Materials, Inc. Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same
US6671051B1 (en) * 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) * 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
JP3854056B2 (ja) * 1999-12-13 2006-12-06 株式会社荏原製作所 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
US6878038B2 (en) * 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
US6609947B1 (en) * 2000-08-30 2003-08-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
JP2002198341A (ja) * 2000-12-25 2002-07-12 Toshiba Corp 化学的機械的研磨処理システム及び化学的機械的研磨方法
US6790768B2 (en) * 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
JP2003057027A (ja) * 2001-08-10 2003-02-26 Ebara Corp 測定装置
US6599765B1 (en) * 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US6935922B2 (en) * 2002-02-04 2005-08-30 Kla-Tencor Technologies Corp. Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing
US7306507B2 (en) * 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window

Also Published As

Publication number Publication date
US20060105679A1 (en) 2006-05-18
TWI338605B (en) 2011-03-11
CN1791490A (zh) 2006-06-21
US7507144B2 (en) 2009-03-24
CN1791490B (zh) 2010-12-08
TW200507984A (en) 2005-03-01
US20070173177A1 (en) 2007-07-26
US20040242121A1 (en) 2004-12-02
JP2006525878A (ja) 2006-11-16
EP1641597A1 (en) 2006-04-05
EP1641597A4 (en) 2007-10-31
US7214122B2 (en) 2007-05-08
WO2004101223A1 (en) 2004-11-25

Similar Documents

Publication Publication Date Title
KR20060009327A (ko) 기판폴리싱장치
US6599765B1 (en) Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
JP3902724B2 (ja) 研磨装置
US6146242A (en) Optical view port for chemical mechanical planarization endpoint detection
JP3878016B2 (ja) 基板研磨装置
TWI653102B (zh) 對於以用於化學機械硏磨的晶圓及晶圓邊緣/斜角清洗模組清洗盤/墊的裝置及方法
JP2008078673A (ja) 研磨装置および研磨方法
US20040173307A1 (en) Apparatus and method for supplying chemicals in chemical mechanical polishing systems
WO2020137653A1 (ja) 光学式膜厚測定システムの洗浄方法
TW201420525A (zh) 輥式輸送機及板狀體之檢查裝置、以及玻璃板之製造裝置
US7547242B2 (en) Substrate polishing apparatus
US11975421B2 (en) Single bodied platen housing a detection module for CMP systems
KR20000077146A (ko) 화학기계적 평탄화 시스템
CN115052712B (zh) 加工装置
JP4697839B2 (ja) 研削装置
JP7596438B2 (ja) 光学式表面監視装置の洗浄方法
KR102467986B1 (ko) 화학 기계적 연마 장치용 유체공급장치
WO2003064108A1 (en) Polishing head, polishing device and polishing method
JPH10199951A (ja) ウェーハの研磨面位置測定装置
KR102894259B1 (ko) 연마 패드의 마모 측정 유닛 및 이를 갖는 화학적 기계적 연마 장치
KR100475015B1 (ko) 슬러리공급장치를포함하는반도체장치제조용화학적기계적연마설비
US12318881B2 (en) Substrate polishing apparatus and substrate polishing method
KR20240133513A (ko) 기판 연마 장치
KR100721756B1 (ko) 웨이퍼 표면연마장비의 연마패드 온도조절장치
JP2005246590A (ja) 噴射ノズル、研磨装置、研磨方法、光学素子及び露光装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000