WO2003064108A1 - Polishing head, polishing device and polishing method - Google Patents

Polishing head, polishing device and polishing method Download PDF

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Publication number
WO2003064108A1
WO2003064108A1 PCT/JP2002/000777 JP0200777W WO03064108A1 WO 2003064108 A1 WO2003064108 A1 WO 2003064108A1 JP 0200777 W JP0200777 W JP 0200777W WO 03064108 A1 WO03064108 A1 WO 03064108A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
slurry
carrier
polishing pad
peripheral surface
Prior art date
Application number
PCT/JP2002/000777
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuyuki Ogata
Manabu Kanemoto
Hiroyuki Kobayashi
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002019148A external-priority patent/JP2003220553A/en
Priority claimed from JP2002019149A external-priority patent/JP2003220554A/en
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Publication of WO2003064108A1 publication Critical patent/WO2003064108A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • polishing head Description Polishing head, polishing apparatus and polishing method
  • the present invention relates to a silicon wafer (bare wafer) of virgin or silicon on the surface.
  • the present invention relates to a polishing head and a polishing apparatus applied to a device for polishing a surface of a workpiece having a flat surface, and a method for polishing a workpiece using the same.
  • the pattern is formed using optical lithography, but as the pattern becomes finer, the depth of focus of optical lithography decreases. In order to ensure pattern accuracy and facilitate focus adjustment during exposure, it is necessary to make the difference in unevenness on the surface of the wafer less than the depth of focus (flatten). Required.
  • the CMP method was used S i 0 2 alkaline slurry and C e 0 2 neutral slurry with using or acidic slurry with AI 2 0 3,, the abrasive agent slurry
  • This is a method of chemically and mechanically polishing and flattening the wafer surface using a first-class method.
  • a polishing apparatus as shown in an enlarged perspective view of a main part in FIG. 15 is known.
  • the polishing apparatus 1 is provided with a polishing pad 4 made of, for example, hard urethane on a disk-shaped platen 3 attached to a center shaft 2.
  • a polishing head 5 that is rotationally driven by a head driving mechanism (not shown) is disposed at a position eccentric from the center axis 2 of the platen 3.
  • the polishing head 5 has a disc-shaped carrier that holds one surface of the wafer W on the lower surface, and an annular relining that is arranged concentrically around the outer periphery of the carrier.
  • the retainer ring comes into contact with the polishing pad 4 at the time of polishing.
  • the inner surface of the retainer ring holds the outer periphery of the wafer W held by the carrier, and the lower surface of the polishing pad 4 presses the wafer W to polish the wafer W.
  • the deformation of the polishing pad 4 in the vicinity of the outer periphery of the wafer is suppressed, and the polishing accuracy of wafer W is ensured.
  • the slurry S described above is supplied to the vicinity of the rotation center C of the polishing pad 4 when polishing the wafer W.
  • the slurry S spreads toward the outer peripheral side in the radial direction on the polishing pad 4 by flowing on the polishing pad 4 and receiving a centrifugal force generated by the rotation of the polishing pad 4, and Flow between the polishing pad 4 and the wafer W held by the pad 5.
  • the wafer W was held by the polishing head 5:
  • the wafer L was rotated on its own axis, and at the same time, the polishing pad 4 was rotated about the central axis 2 so that one surface of the wafer W was polished by the polishing pad 4. .
  • a work (dressing) of slightly polishing the surface of the polishing pad 4 is performed. Supplied above. Thereafter, the wafer W is polished using the slurry S (the polishing of the wafer W and the dressing may be performed in parallel), but after the polishing, pure water is supplied to the surface of the polishing pad 4. Then, wafer W is polished using this pure water instead of slurry S. As a result, the surface of wafer W is cleaned (rinse polishing). With these as one cycle, polishing of new ⁇ :!: Haha W is performed one after another.
  • the slurry S is supplied onto the polishing pad 4 and the slurry S flows on the polishing pad 4.
  • the polishing was performed while flushing the liquid such as pure water remaining in the wafer.
  • the slurry S is diluted by the liquid remaining on the polishing pad 4 in the initial stage of polishing. Therefore, the wafer W is polished in a state where there is a difference in the slurry concentration in each part of the polishing pad 4.
  • the slurry S may flow out of the retainer due to the centrifugal force generated by the rotation of the platen 3, or may not reach the surface of the wafer sufficiently, where the retainer ring acts as a barrier and is retained on the inner peripheral side of the retainer ring. ⁇
  • the center part of Eha W was difficult to be polished. For this reason, the polishing efficiency of the wafer W decreases.
  • the cost of slurry S accounts for about 70% of the consumable material cost of the polishing equipment, so it is important to reduce the amount of slurry consumed to reduce consumable material cost.
  • the present invention has been made in view of such circumstances, and it is an object of the present invention to provide a polishing head capable of satisfactorily polishing an wafer. Another object of the present invention is to provide a polishing apparatus capable of reducing the consumption of slurry and a method for polishing a workpiece using the polishing apparatus. Disclosure of the invention
  • a first aspect of the present invention is to provide a method for pressing a material to be polished against a surface of a polishing pad stuck on a platen while moving relatively to the polishing pad.
  • An annular retainer ring that locks an outer periphery of the workpiece to be polished, and a liquid supply path for supplying liquid to a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the retainer ring.
  • a polished head characterized by being formed.
  • the liquid passes through the liquid supply passage, and the gap between the outer peripheral surface of the carrier holding one surface of the material to be polished and the inner peripheral surface of the retaining ring, That is, since the liquid is supplied to the gap located on the outer periphery of the material to be polished, the liquid is directly supplied between the material to be polished and the polishing pad without being hindered by the rotation / retainer ring of the platen.
  • the liquid supplied between the workpiece and the polishing pad is surrounded by the relining, and the outer periphery of the retainer ring is affected by the centrifugal force caused by the rotation of the polishing head and the platen. Since the liquid does not easily flow out, the liquid can be used efficiently, and for example, the amount of expensive slurry used can be reduced.
  • the carrier is heated by receiving the processing heat generated during polishing of the material to be polished.
  • the carrier is thermally deformed, the deformation affects the material to be polished held by the carrier. Polishing accuracy of the workpiece is reduced.
  • the thermal deformation of the carrier can be reduced, and the polishing accuracy of the workpiece can be improved.
  • liquid supply path may be at least one of a flow path A provided in the carrier and a flow path B provided in the retainer ring.
  • the slurry can be supplied between the workpiece and the polishing pad from two locations, so that the slurry supply amount can be increased.
  • liquid supply path may be connected to a slurry cleaning liquid supply mechanism for selectively supplying one of a slurry and a cleaning liquid.
  • the slurry tends to gradually clog in the gaps between the polishing heads as it gradually dries or deteriorates, and if such slurry falls on the polishing pad, it may cause scratches on the surface of the workpiece.
  • the polishing head the polishing operation is completed.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped, and the cleaning liquid is supplied into the liquid supply path instead.
  • the slurry remaining in the gap between the outer peripheral surface and the inner peripheral surface of the retainer ring can be washed away with the cleaning liquid.
  • the cleaning liquid for example, pure water, a solvent constituting a slurry, or the like may be used.
  • a groove A connected to the flow path A and supplied with the liquid from the flow path A may be formed on the entire outer circumference of the carrier.
  • a groove B connected to the flow path B and supplied with the liquid from the flow path B may be formed on the entire circumference of the inner peripheral surface of the retainer ring.
  • the slurry supplied to the outer peripheral surface of the carrier by the flow path A can be completely removed by the groove A. It is guided to the circumference and flows down from the entire circumference of the outer peripheral surface.
  • the groove B is provided in the retainer ring, so that the slurry supplied to the inner peripheral surface of the retainer ring by the flow path B has an inner circumferential surface formed by the groove B.
  • the supply of the slurry to the flow path and the slurry B from the slurry cleaning liquid supply mechanism is stopped, and the cleaning liquid is supplied to the flow path and the B instead.
  • the cleaning liquid can be spread over the entire circumferential range of the gap formed therebetween, and the remaining slurry can be more effectively washed away.
  • the flow path A may be communicated from the center of the upper surface of the carrier to a plurality of locations on the outer peripheral surface, and may be formed substantially radially from the center to the outer peripheral side.
  • the slurry can be supplied almost uniformly to the outer periphery of the carrier, and the flow path A is formed in the entire carrier, so that the slurry passing through the flow path A cools the carrier more effectively. Also, when polishing the material to be polished, the slurry supplied into the flow path A is sent out to the outer peripheral surface by centrifugal force generated by the rotation of the polishing head. Therefore, the slurry can be smoothly supplied to the outer peripheral surface of the carrier. Further, the liquid supply path may be formed in an annular shape and have a diameter of 2 mm or more and 1 O mm or less.
  • the diameter of the annular liquid supply path is smaller than 2 mm, the slurry tends to be clogged, and if it is larger than 1 Omm, the strength of the carrier and the retainer ring that form the liquid supply path decreases. 2 mm or more and 1 O mm or less are desirable.
  • an elastic body is provided in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring to allow relative displacement in the up-down direction and connected, and a liquid is supplied to the elastic body in the gap.
  • a supply port for supplying the liquid may be provided, and the liquid supply path may be connected to the supply port.
  • a carrier that holds one surface of the material to be polished and a retainer ring that locks the outer periphery of the material to be polished are connected via an elastic body. Then, the slurry supplied from the liquid supply passage is supplied to the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring through a supply port provided in the elastic body, whereby the rotation of the platen and the retainer ring are performed.
  • the slurry is directly supplied between the workpiece and the polishing pad from the gap without being hindered, and a sufficient amount of slurry can be supplied between the workpiece and the polishing pad.
  • the slurry supplied between the workpiece and the polishing pad is surrounded by a retainer ring, and flows out to the outer periphery of the retainer ring even when subjected to centrifugal force due to the rotation of the polishing head and the platen. It is difficult to use the slurry efficiently.
  • a slurry Z cleaning liquid supply mechanism for selectively supplying either the slurry or the cleaning liquid may be provided in the liquid supply path connected to the supply port.
  • the slurry is supplied to the supply port by the slurry cleaning liquid supply mechanism during polishing.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism to the supply port is stopped, and the cleaning liquid is supplied to the supply port instead.
  • the slurry remaining in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring can be washed away by the cleaning liquid.
  • the cleaning liquid for example, pure water, a solvent constituting a slurry, or the like may be used.
  • the retainer ring locks the outer periphery of the polishing target material held by the carrier and suppresses deformation of the polishing pad near the outer periphery of the polishing target material. It is desirable that the gap formed between the retainer ring and the inner peripheral surface be as small as possible. However, when the gap is reduced in this manner, the area of the elastic body exposed in the gap is also reduced, and the size of the supply port is limited, so that the supply amount of the slurry or the cleaning liquid from the supply port is reduced. I will.
  • At least one of an outer peripheral edge of the carrier and an inner peripheral edge of the retainer ring is provided at a portion facing the elastic body with a housing portion that forms a housing space between the other peripheral edge portion and the elastic body. Then, the supply roller may be provided at a portion facing the storage space.
  • At least one of the outer peripheral edge of the carrier and the inner peripheral edge of the retainer ring faces the elastic body, and a housing portion that forms a housing space is formed. Since the elastic body is exposed not only in the gap but also in the accommodation space, the gap formed between the outer peripheral surface of the carrier and the inner peripheral surface of the reanna ring is reduced, and the supply port is formed in the elastic body. It is possible to secure an area in which it can be provided.
  • polishing of the polishing target partially proceeds at that portion.
  • the housing portion may be provided over the entire periphery of the peripheral portion where the housing portion is provided.
  • the slurry supplied from the supply port into the storage space is guided by the storage section along the circumferential direction of the peripheral portion where the storage section is provided, and flows down from the entire circumference.
  • the resin is supplied almost uniformly, and the polishing amount can be made substantially uniform over the entire surface of the material to be polished.
  • the polishing head When the polishing head is provided with a slurry cleaning liquid supply mechanism, by supplying the cleaning liquid to the supply port, a circumferential direction of a gap formed between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring is provided.
  • the washing liquid can be spread over the entire area of the gap, and the slurry remaining in the gap can be more effectively washed away.
  • a wall portion that stands upright in a gap between a lower surface of the housing portion and a peripheral surface of a peripheral portion provided with the housing portion; and a plurality of circumferential portions of the wall portion; And a connection path connecting the peripheral surface and the peripheral surface.
  • the slurry or the cleaning liquid supplied into the storage space is once received by the wall and flows along the wall in the circumferential direction of the storage space. Then, when the slurry or the cleaning liquid reaches the connection passages provided at various places in the circumferential direction of the wall portion, the slurry or the cleaning liquid flows out into the gap formed between the carrier and the retainer ring through the connection passage. That is, the slurry or the cleaning liquid supplied into the housing space flows out into the gap through the connection path at various points in the circumferential direction of the head body, so that the slurry or the cleaning liquid can be supplied more uniformly over the entire circumference of the gap. it can.
  • an inclined surface may be provided on the lower surface of the housing portion so as to be gradually inclined downward toward the peripheral surface.
  • a material to be polished is pressed against a surface of a polishing pad stuck on a platen while being relatively moved with respect to the polishing pad by a polishing head.
  • a polishing method for polishing an abrasive material wherein the polishing head is used to supply slurry from the liquid supply path to a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the reanna ring. This is a polishing method for polishing a material to be polished.
  • the slurry supplied from the slurry / cleaning liquid supply mechanism passes through the liquid supply path to the outer peripheral surface of the carrier that holds one surface of the material to be polished, and Retainer ring that locks the outer periphery of the abrasive 02 00777
  • the slurry is directly supplied to the polishing pad without being hindered by the rotation of the platen or the retainer ring. Supplied.
  • the carrier is heated by receiving the processing heat generated during polishing of the material to be polished.
  • the carrier is thermally deformed, the deformation affects the material to be polished held by the carrier. Polishing accuracy of the workpiece is reduced.
  • the thermal deformation of the carrier can be reduced, and the polishing accuracy of the workpiece can be improved.
  • the slurry is liable to be clogged in the gap between the polishing heads as it gradually dries or deteriorates, and if such a slurry falls on the polishing pad, it causes a scratch on the surface of the material to be polished.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped at an appropriate time such as when the polishing operation is completed, and the cleaning liquid is supplied into the liquid supply path instead.
  • the cleaning liquid for example, pure water, a solvent constituting a slurry, or the like may be used.
  • the polishing target is pressed against a surface of a polishing pad stuck on a platen while being moved relatively to the polishing pad by a polishing head.
  • a polishing apparatus for polishing a material including a spraying apparatus for blowing at least one of a gas and a slurry onto a surface of the polishing pad.
  • the polishing apparatus configured as described above, at least one of gas and slurry is sprayed on the surface of the polishing pad by the spraying apparatus.
  • the spray device is configured to blow gas
  • a liquid such as pure water may be applied on the polishing pad.
  • a gas is blown onto the surface of the polishing pad by a spraying device, whereby the liquid on the polishing pad is swept away by the gas and removed.
  • the spraying device is configured to spray the slurry
  • the liquid on the polishing pad is swept away by the slurry sprayed on the surface of the polishing pad by the spraying device, and the liquid is replaced with the slurry.
  • the spraying device When the spraying device is configured to spray both gas and slurry to the polishing pad, first, gas is blown to the surface of the polishing pad to remove the liquid on the polishing pad, and then to the surface of the polishing pad. By spraying the slurry, a layer of the slurry not diluted by the liquid is formed on the polishing pad.
  • the spraying device may have a nozzle for discharging gas or slurry, and a nozzle moving mechanism for moving the nozzle on the surface of the polishing pad.
  • the nozzle or moving mechanism moves the nozzle relative to the surface of the polishing pad, so that the gas or slurry is discharged from the surface of the polishing pad. Sprayed evenly.
  • the gas or the slurry can be sprayed on at least the entire region used for polishing the workpiece on the surface of the polishing pad.
  • the nozzle moving mechanism can be configured to move the nozzle, for example, from a position facing the rotation center of the polishing pad toward the radially outer peripheral side.
  • the platen is driven to rotate the polishing pad, and in parallel with this, while blowing gas or slurry from the nozzle to the polishing pad, the nozzle is moved radially outward from a position facing the rotation center of the polishing pad.
  • the gas or slurry is sprayed in a spiral shape, and the gas or slurry is evenly sprayed on the surface of the polishing pad.
  • the slurry dries or deteriorates over time and solidifies, so if the spraying device is configured to discharge the slurry from the nozzle, the cleaning liquid supply source is connected to the nozzle in this way, and the Supplying the cleaning liquid from the cleaning liquid supply source to the nozzle Thus, the slurry in the nozzle is washed away by the cleaning liquid, and the nozzle can be prevented from being clogged.
  • the polishing pad can be cleaned.
  • a fourth embodiment of the present invention is a method for polishing a material to be polished, which is performed using the polishing apparatus, wherein a gas or slurry is sprayed on a surface of the polishing pad by the spraying device, and the surface of the polishing pad is A polishing method for a material to be polished, characterized in that after the liquid is removed, the slurry is supplied onto the polishing pad to polish the material to be polished.
  • the spraying device When the spraying device is configured to blow gas, the gas such as pure water is left on the polishing pad, and the gas is blown onto the surface of the polishing pad by the spraying device so that the gas blows on the polishing pad. The liquid is swept away and removed.
  • gas such as pure water
  • the spraying device is configured to spray the slurry
  • the liquid on the polishing pad is swept away by the slurry sprayed on the surface of the polishing pad by the spraying device, and the liquid is replaced with the slurry.
  • the spraying device When the spraying device is configured to blow both gas and slurry onto the polishing pad, first, gas is blown onto the surface of the polishing pad to remove the liquid on the polishing pad, and then the surface of the polishing pad is removed. By spraying the slurry on the polishing pad, a layer of the slurry not diluted by the liquid is formed on the polishing pad.
  • FIG. 1 is a longitudinal sectional view showing a configuration of a polishing head according to the first embodiment of the present invention.
  • FIG. 2 is a longitudinal sectional view illustrating a schematic configuration of a main part of the polishing head according to the first embodiment.
  • FIG. 3A is a longitudinal sectional view showing another example of the configuration of the polishing head according to the first embodiment.
  • FIG. 3B is a longitudinal sectional view showing another example of the configuration of the polishing head according to the first embodiment.
  • FIG. 4 is a longitudinal sectional view showing a configuration of a polishing head according to the second embodiment of the present invention.
  • FIG. 5 is a longitudinal sectional view showing a configuration of a polishing head according to the third embodiment of the present invention.
  • FIG. 6A is a longitudinal sectional view showing an example of the configuration of a polishing head according to the third embodiment of the present invention.
  • FIG. 6B is a longitudinal sectional view showing an example of the configuration of the polishing head according to the third embodiment of the present invention.
  • FIG. 6C is a longitudinal sectional view showing an example of the configuration of the polishing head according to the third embodiment of the present invention.
  • FIG. 7 is a longitudinal sectional view showing a configuration of a polishing head according to a fourth embodiment of the present invention.
  • FIG. 8 is a longitudinal sectional view showing a configuration of a polishing head according to a fifth embodiment of the present invention.
  • FIG. 9 is a tip view of a polishing head according to a fifth embodiment of the present invention.
  • FIG. 10 is a partially enlarged view schematically showing a main part of a polishing head according to a fifth embodiment of the present invention.
  • FIG. 11 is a longitudinal sectional view showing the configuration of another polishing head according to the fifth embodiment of the present invention.
  • FIG. 12 is a perspective view showing a configuration of a polishing apparatus according to one embodiment of the present invention.
  • FIG. 13 is a longitudinal sectional view showing a configuration of a polishing apparatus according to another embodiment of the present invention.
  • FIG. 14 is a graph showing the polishing performance of the material to be polished in the polishing apparatus according to the present invention when the spraying apparatus is used and when it is not used.
  • FIG. 15 is a perspective view schematically showing a conventional polishing apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIGS. 1 and 2 are views showing the configuration of the polishing head according to the present embodiment
  • FIG. 1 is a vertical cross-sectional view
  • FIG. 2 is a vertical cross-sectional view showing a schematic configuration of a main part.
  • the polishing head according to the present embodiment is used in place of the polishing head 5 in, for example, the conventional polishing apparatus shown in FIG.
  • the polishing head 11 includes a head main body 12 including a top plate 13 and a peripheral wall portion 14 formed in a cylindrical shape, and a head main body. 12 and a diaphragm 15 (elastic body) stretched inside.
  • a disc-shaped carrier 16 that holds one surface of the wafer W (a material to be polished) by the lower surface, and between the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. It is provided concentrically, and is fixed to an annular retainer ring 17 that locks the outer periphery of the wafer W held by the carrier 16 on the inner peripheral surface 17a while being in contact with the polishing pad 4 during polishing. I have.
  • the carrier 16 and the retainer ring 17 are connected via a diaphragm 15 while allowing relative displacement in the vertical direction with respect to each other.
  • the head body 1 2 is composed of a disk-shaped top plate 13 and a cylindrical peripheral wall 14 fixed below the outer periphery of the top plate 13, and the lower end of the head body 1 2 The part is open and hollow.
  • the top plate 13 is coaxially fixed to a shaft 19 connected to the main body of the polishing apparatus.
  • the shaft 19 has a first flow hole 20 connected to a pressure adjusting mechanism 30 described later.
  • a and a second flow hole 20b connected to the slurry / washing liquid supply mechanism 31 are formed parallel to the axis.
  • a step portion 14a is formed over the entire circumference.
  • the carrier 16 made of a high-rigidity material such as ceramics is formed in a substantially disc-like shape with a constant thickness, and the diaphragm 15 is interposed between the carrier fixing ring 21 provided on the upper surface of the diaphragm 15. It is attached to the diaphragm 15 by being fixed in a sandwiched state.
  • the retainer ring 17 is formed in a substantially annular shape as shown in FIG. 1 and has a slight gap between the retainer ring 17 and the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. They are arranged concentrically with these. Where carrier 16 and retainer 777
  • the gap formed between the connector 17 and K is indicated by the symbol K (see FIG. 2).
  • the retainer ring 17 is attached to the diaphragm 15 by being fixed to the retainer ring fixing ring 22 provided on the upper surface of the diaphragm 15 with the diaphragm 15 interposed therebetween. ing.
  • At least one of the outer peripheral edge of the carrier 16 and the inner peripheral edge of the retainer ring 17 has an accommodation space C at a portion facing the diaphragm 15 and between the other peripheral edge.
  • An accommodating portion 23 is provided.
  • a notch is provided in the outer peripheral edge of the carrier 16 to form the accommodation portion 23, and the accommodation portion
  • the diaphragm 15 made of an elastic material such as fiber reinforced rubber is formed in an annular or disk shape, and its outer peripheral edge is formed by a step 14 a and a step 14 formed on the inner wall of the peripheral wall 14. It is fixed to the head body 12 by being sandwiched between the diaphragm fixing ring 26 attached to a.
  • a fluid chamber 27 is formed between the diaphragm 15 and the head body 12.
  • the fluid chamber 27 is connected to the pressure adjusting mechanism 30 through a first flow hole 20 a formed in the shaft 19. And, inside the fluid chamber 27, a pressure adjusting mechanism
  • the pressure in the fluid chamber 27 is adjusted by supplying a fluid such as air from 30 through the first circulation hole 20a.
  • the diaphragm 15 is provided with a supply port 28 for supplying slurry into a gap K formed between the outer peripheral surface of the carrier 16 and the inner peripheral surface of the retainer ring 17.
  • the supply port 28 is provided at a portion of the diaphragm 15 that faces the storage space C formed by the storage portion 23 of the carrier 16 (a portion exposed to the storage space).
  • the supply port 28 of a required size can be provided in the storage space C while the gap K is made as small as possible.
  • the supply port 28 may be provided at only one location in the diaphragm 15 or may be provided at a plurality of locations in the circumferential direction of a portion of the diaphragm 15 facing the accommodation space C.
  • the supply port 28 is provided with a pair of support plates 28 a provided with openings 28 b at positions opposed to each other at positions facing the storage space C in the diaphragm 15 from above and below, and a diaphragm 15. Facing this opening 28b 02 00777
  • the support plate 28a may be formed, for example, in a ring shape, and a portion of the diaphragm 15 facing the accommodation space C may be sandwiched over the entire circumference in the circumferential direction, or only a part of the circumferential direction may be sandwiched. It may be configured to be sandwiched.
  • the support plate 28 a is provided with a gap between at least one of the portion covered by the carrier 16 and the portion covered by the retainer ring 17 in the diaphragm 15. .
  • the supply port 28 is connected to the slurry Z cleaning liquid supply mechanism 31.
  • the open end of the fluid chamber 27 side is connected to a first flexible pipe 29 at least partially having flexibility. It is connected to a second flow hole 20 b formed in the shaft 19 of the head body 12.
  • the diaphragm 15 is allowed to be displaced in the axial direction of the head main body 12 by deforming the first flexible pipe 29.
  • the second flow hole 2 Ob is connected to the slurry cleaning liquid supply mechanism 31 for selectively supplying either the slurry or the cleaning liquid, and the supply is thereby performed.
  • the slurry or the cleaning liquid is selectively supplied from the slurry / cleaning liquid supply mechanism 31 via the second circulation hole 20b and the first flexible pipe 29. It is supposed to be.
  • the slurry cleaning liquid supply mechanism 31 has a slurry supply source 32 and a cleaning liquid supply source 33, and these supply the slurry cleaning liquid to the second flow holes 20b, respectively. It is connected via piping 34.
  • Slurry slurry supply source 3 2 supplies, for example S ⁇ 0 2 the alkaline slurry and C e 0 2 neutral slurry was used which uses or acid slurries with A 1 2 0 3,, abrasive agent E: E-C is suitable for the polishing conditions of W.
  • the cleaning liquid supply source 33 supplies, for example, pure water, a solvent constituting a slurry, or the like as the cleaning liquid.
  • the slurry cleaning liquid supply pipe 34 is connected to the slurry supply source 32 via a first valve 36, and the slurry cleaning liquid supply source 33 is connected to a second valve 3 4.
  • one of the first and second valves 36, 37 is opened and the other is closed, so that either one of the slurry and the cleaning liquid can be selectively used. It is supplied to.
  • the mechanism for switching the supply of the slurry or the cleaning liquid to the slurry cleaning liquid supply pipe 34 is not limited to the mechanism using the first and second valves 36 and 37 as described above. Any mechanism commonly used for switching connections can be used.
  • the wafer W is first attached to a wafer attachment sheet (not shown) provided on the lower surface of the carrier 16, for example. Then, while the periphery of the wafer W is locked by the retainer ring 17, the surface thereof is brought into contact with the polishing pad 4 attached to the upper surface of the platen 3. At this time, the lower surface of the retainer ring 17 is also in contact with the polishing pad 4.
  • both the first and second valves 36 and 37 of the slurry cleaning liquid supply mechanism 31 are closed.
  • the pressure in the fluid chamber 27 is adjusted by causing a fluid such as air to flow into the fluid chamber 27 from the first circulation hole 20 a by the pressure adjusting mechanism 30, and the carrier 16 and The pressing pressure of the retainer ring 17 on the polishing pad 4 is adjusted.
  • the carrier 16 and the retainer ring 17 have a floating structure supported by the diaphragm 15 so as to be vertically displaceable, and are pressed against the polishing pad 4 by the pressure inside the fluid chamber 27.
  • the pressure is adjustable.
  • the platen 3 is rotated and the polishing head 11 is rotated.
  • the first valve 36 of the slurry cleaning liquid supply mechanism 31 is opened, and the slurry is supplied from the slurry supply source 32 into the slurry cleaning liquid supply pipe 34.
  • the first valve 36 is kept open during polishing of wafer W.
  • the slurry supplied to the slurry / cleaning liquid supply pipe 34 passes through the second circulation hole 20 b provided in the shaft 19 of the head body 12 and the first flexible pipe 29. It is supplied to supply port 28.
  • the slurry supplied to the supply port 28 is supplied into the storage space C formed by the storage portion 23 of the carrier 16, and is guided by the storage portion 23 to the entire circumference of the outer peripheral surface 16 a of the carrier 16. As a result, the slurry is supplied from the entire circumference of the outer peripheral surface 16a to the gap K formed between the inner peripheral surface 17a of the retainer ring 17 and the entire circumference.
  • the slurry flows down from the gap and is directly supplied between the wafer W and the polishing pad 4, so that the wafer W is polished.
  • the flow of the slurry is shown by arrows in FIG.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the supply port 28 is stopped, and the slurry is supplied to the supply port 28 instead.
  • the cleaning liquid is spread in the supply port 28 and the entire circumferential direction of the storage section 23, and the slurry remaining in the supply port 28, the storage space C, and the gap K is washed away.
  • the supply of the slurry from the slurry supply source 32 to the slurry cleaning solution supply pipe 34 is stopped by closing the first valve 36, and the second valve 37 is opened.
  • the cleaning liquid is supplied from the cleaning liquid supply source 33 to the slurry cleaning liquid supply pipe 34.
  • the polishing head 11 configured as described above, the wafer W and the wafer W from the gap K formed between the outer peripheral surface 16 a of the carrier 16 and the inner surface 17 a of the retainer ring 17. Since the slurry is directly supplied between the polishing pad 4 and the rotation of the platen 3 ⁇ A sufficient amount of slurry is supplied between the wafer W and the polishing pad 4 without being hindered by the retainer ring 17. be able to.
  • the slurry is guided to the accommodating portion 23 provided on the outer peripheral edge of the carrier 16 and supplied to the entire periphery in the gap K, so that the slurry W and the polishing pad 4 are supplied from the entire outer periphery of the wafer W.
  • the slurry is supplied almost uniformly, so that the polishing amount can be made substantially uniform over the entire surface of W.
  • the retainer ring 17 receives the centrifugal force caused by the rotation of the polishing head 11 and the platen 3. Hard to leak to the outer circumference of. As a result, polishing can be performed efficiently with the minimum amount of slurry used, and expensive slurry can be used. The dose can be significantly reduced.
  • the reslurry is evenly supplied to the surface of the polishing pad 4 by rotating the polishing head 11 itself, the slurry can be efficiently contributed to polishing.
  • the use efficiency of the slurry can be increased and the amount of use can be significantly reduced in this manner, the aggregated particles of the slurry as a total amount are reduced.
  • the micro-scratches generated on the surface of W can be reduced, and the polishing performance of wafer w can be improved.
  • the load on the polishing pad 4 due to the slurry is reduced, the life of the polishing pad 4 is extended, and the cost of the polishing pad 4 can be reduced.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the supply port 28 is stopped, and the cleaning liquid is supplied into the supply port 28 instead.
  • the slurry remaining in the supply port 28 and the gap K can be washed away with the washing liquid before the slurry dries, deteriorates, or solidifies.
  • the housing portion 23 may be provided on the inner peripheral edge of the retainer ring 17. As shown in the figure, it may be provided on both the carrier 16 and the retainer ring 17. In the latter case, the accommodation space C can be made larger, so that the area where the supply port 28 can be provided in the diaphragm 15 can be made even larger.
  • the slurry cleaning liquid supply mechanism 31 is connected to the port 28 so that either the slurry supplied from the slurry supply source 32 or the cleaning liquid supplied from the cleaning liquid supply source 33 is selectively supplied.
  • the present invention is not limited to this, and the supply port 28 may have a configuration in which only the slurry supply source 32 is connected. Further, in the above-described embodiment, an example is shown in which the supply port 28 is configured by the pair of support plates 28 a that sandwich the diaphragm 15 and the opening 15 a of the diaphragm 15. Without connecting the first flexible pipe 29 to the fluid chamber 27 side of the opening 15a in the diaphragm 15 without providing the support plate 28a, for example. A diaphragm having a configuration in which the flexible pipe 29 itself is integrally formed may be used. Second embodiment
  • polishing head 41 according to the present embodiment is different from the polishing head 1 according to the first embodiment in that, as shown in the longitudinal sectional view of FIG. It is provided with an inclined surface 23a which is gradually inclined downward as it goes toward.
  • FIG. 4 illustrates, as an example, a case where the housing portion 23 is provided on the outer peripheral edge of the carrier 16.
  • the slurry supplied from the supply port 28 into the storage space C flows along the inclined surface 23 a of the storage part 23 as shown by an arrow in FIG. Since the slurry quickly flows toward the gap K, the slurry is less likely to stay and the slurry is less likely to dry, change in quality, and to solidify.
  • polishing head 46 according to the present embodiment is different from the polishing head 1 according to the first embodiment in that the lower surface of the accommodation portion 23 and the accommodation portion 2 are provided as shown in the vertical sectional view of FIG.
  • An upwardly rising wall portion 47 is provided between the peripheral surface of the peripheral portion provided with 3, that is, between the lower surface of the housing portion 23 and the outer peripheral surface 16 a of the carrier 16. 7 has a circumferential multiple Orchid 77
  • FIG. 5 illustrates, as an example, a case where the housing portion 23 is provided on the outer peripheral edge of the carrier 16.
  • the slurry supplied into the storage space C is once received by the wall portion 47 and flows in the circumferential direction along the storage portion 23. Then, when the slurry reaches the connection path 48 provided in the wall portion 47, a part of the slurry flows out into the gap K formed between the carrier 16 and the retainer ring 17 through the connection path 48. .
  • the slurry is reliably guided along the entire circumference in the circumferential direction by the housing portion 23 and the wall portion 47 and flows out into the gap K through the connection passage 48 at various locations in the circumferential direction. It can be supplied more uniformly over the entire circumference of the gap K.
  • the cleaning liquid supply source 33 when the cleaning liquid is supplied into the accommodating space C, the cleaning liquid is surely envisaged along the entire circumference in the same manner as the slurry, and the carrier liquid is supplied. At each point in the circumferential direction of 16, it flows out into the gap K, and the entire inside of the gap K can be cleaned.
  • connection paths 48 are provided at equal intervals in the circumferential direction of the carrier 16, for example, so that the slurry and the cleaning liquid can be supplied more uniformly over the entire circumference of the gap.
  • connection path 48 is arbitrary.
  • the connection path 48 has a semicircular shape in cross section, or as shown in FIGS. 6B and 6C, a triangular shape or a square shape in cross section. It may be polygonal.
  • an inclined surface 23a that is gradually inclined downward toward the peripheral surface may be provided on the lower surface of the housing portion 23.
  • the housing portion 23 is provided on the outer peripheral edge of the carrier 16 .
  • the present invention is not limited to this, and the housing portion 23 is provided on the inner peripheral edge of the retainer ring 17.
  • the wall portion 47 having the connection path 48 can be provided in the housing portion 23.
  • FIG. 7 is a longitudinal sectional view showing the configuration of the polishing head 51 according to the present embodiment.
  • the polishing head 51 according to the present embodiment is the same as the polishing head 1 according to the first embodiment, except that at least one of the carrier 16 and the retainer ring 1 ⁇ And a cleaning liquid supply channel 52 for supplying at least one of the slurry and the cleaning liquid.
  • This channel 52 is also connected to at least one of the slurry supply source 32 and the cleaning liquid supply source 33. It was done.
  • the carrier 16 is provided with a first flow path (flow path A) 52a, and the retainer 17 is provided with a second flow path (flow path B) 52b.
  • the carrier 16 is provided with a first flow path 52a extending from the upper surface 16b to the outer peripheral surface 16a, and the first flow path 52a is provided with a first flow path 52a.
  • the opening end on the 6b side is connected to the second circulation hole 20b of the head body 12 by a second flexible pipe 53 having at least a part of elasticity.
  • the top plate 13 is provided with a joint portion 54 to which a slurry / cleaning liquid supply pipe 34 is connected, and the top plate 13 and the peripheral wall portion 14 are joined together.
  • a head body conduit 56 which communicates with the inner peripheral surface of the step portion 14a of the peripheral wall portion 14.
  • the retainer ring 17 is provided with a second flow path 52 b communicating from the upper face 17 b to the inner peripheral face 17 a, and the second flow path 52 b has an upper face 17 b side.
  • the open end of the head body pipe 56 is connected to the head main body pipe 56 by a third flexible pipe 57 having at least a part of elasticity.
  • the slurry and the cleaning liquid can be supplied into the gap K not only from the supply port 28 provided in the diaphragm 15 but also from the flow path 52 provided in the carrier 16 or the retainer ring 17. As a result, it is possible to maintain the polishing performance by securing the flow rates of the slurry and the cleaning liquid.
  • connection form of the flow path 52, the slurry supply source 32, and the cleaning liquid supply source 33 shown in the above embodiment is an example, and any other form can be adopted.
  • FIG. 8 is a longitudinal sectional view showing a configuration of the polishing head according to the present embodiment
  • FIG. 9 is a front end view of the polishing head according to the present embodiment
  • FIG. 10 is a polishing head according to the present embodiment.
  • FIG. 2 is a partially enlarged view schematically showing a main part of the door.
  • the polishing head according to the present embodiment is used in place of the polishing head 5 in, for example, the conventional polishing apparatus shown in FIG.
  • the polishing head 61 includes a head body 12 including a top plate 13 and a peripheral wall portion 14 formed in a cylindrical shape, and a head body.
  • Diaphragm 15 stretched inside 1 2 and disc-shaped carrier 16 fixed to the lower surface of diaphragm 15 and holding one surface of ⁇ :! Is provided concentrically between the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16.
  • the inner peripheral surface 17 a contacts the carrier 16 with the polishing pad 4 while polishing.
  • an annular linear ring 17 for locking the outer periphery of the wafer W to be held.
  • the head body 12 is composed of a disk-shaped top plate 13 and a cylindrical peripheral wall 14 fixed below the outer periphery of the top plate 13, and the lower end of the head body 12 is It is open and hollow.
  • the top plate 13 is coaxially fixed to a shaft 19 connected to the main body of the polishing apparatus, and the shaft 19 has a first flow hole 20 a and a first communication hole 20 a communicating with the pressure adjusting mechanism 30.
  • a second flow hole 20b communicating with the slurry Z cleaning liquid supply mechanism 31 is formed in the vertical direction.
  • the top plate 13 is provided with a joint 54 for connection to the slurry Z cleaning liquid supply mechanism 31. From the joint portion 54, a head main body conduit 56 communicating with the lower surface of the top plate portion 13 is formed.
  • a step portion 14a is formed at the lower end of the peripheral wall portion 14 over the entire circumference.
  • the diaphragm 15 made of an elastic material such as fiber reinforced rubber is formed in an annular or disk shape, and its outer peripheral edge is formed by a step 14 a and a step 14 formed on the inner wall of the peripheral wall 14. It is fixed to the head body 12 by being sandwiched between the diaphragm fixing ring 26 attached to a.
  • a fluid chamber 27 is formed above the diaphragm 15, and the fluid chamber 27 is communicated with the pressure adjusting mechanism 30 by a first flow hole 20 a formed in the shaft 19. Have been. Then, by supplying a fluid such as air into the fluid chamber 27 from the pressure adjusting mechanism 30 through the first circulation hole 20a, the pressure inside the fluid chamber 27 is adjusted. .
  • the carrier 16 made of a high-rigidity material such as ceramics is formed in a substantially disc-like shape with a constant thickness, and the diaphragm 15 is interposed between the carrier fixing ring 21 provided on the upper surface of the diaphragm 15. It is attached to the diaphragm 15 by being fixed in a sandwiched state.
  • a first flow path (flow path A) 62 is formed as a flow path.
  • the first flow path 62 includes a vertical portion 62 a formed along the axis of the carrier 16 from the center of the upper surface 16 b to the vicinity of the lower surface of the carrier 16, and a lower portion of the vertical portion 62 a Along the lower surface of the carrier 16, there is a horizontal portion 62b provided substantially radially toward the outer peripheral side.
  • a total of four horizontal portions 62 b are formed at substantially equal angles in the circumferential direction of the carrier 16.
  • the open end on the upper surface 16b side is connected through a first flexible pipe 53 having at least a part of flexibility.
  • the carrier 16 is allowed to be displaced in the head axis direction due to the deformation of the diaphragm 15 due to the deformation of the first flexible pipe 53.
  • the second circulation hole 2 Ob is connected to the slurry cleaning liquid supply mechanism 31 that selectively supplies either the slurry or the cleaning liquid, thereby forming
  • the one flow path 62 selectively supplies either one of the slurry and the cleaning liquid from the slurry cleaning liquid supply mechanism 31 via the second circulation hole 20b and the first flexible pipe 53. It is being supplied.
  • the diameter of the first flow path 62 is smaller than 2 mm, the slurry is likely to be clogged, and when the diameter is larger than 10 mm, the strength of the carrier 16 is reduced. It is desirable to do the following.
  • the outer surface 16 a of the carrier 16 is connected to the first flow path 62, JP02 / 00777
  • a first groove (groove A) 64 for guiding the slurry or the cleaning liquid supplied from the flow path 62 of the first embodiment is formed over the entire circumference.
  • the lower inner surface 64 a of the first groove 64 has a shape that is depressed downward as shown in FIG. 10, whereby the first inner surface 64 a is moved from the first channel 62 to the first channel 62.
  • the slurry or the cleaning liquid supplied to the groove 64 is temporarily held, and flows along the first groove 64.
  • FIG. 10 shows a state of holding the slurry S by the first groove 64 as an example.
  • the retainer ring 17 is formed in a substantially annular shape as shown in FIG. 8 and has a slight gap between the retainer ring 17 and the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. These are arranged concentrically.
  • a gap formed between the carrier 16 and the retaining ring 17 is indicated by a symbol K (see FIGS. 9 and 10).
  • the retainer ring 17 is attached to the diaphragm 15 by being fixed to the retainer ring fixing ring 22 provided on the upper surface of the diaphragm 15 with the diaphragm 15 interposed therebetween. ing.
  • the retainer ring fixing ring 22 and the diaphragm 15 are provided with a second flexible pipe 57 (described later) at a position facing an opening end of a second flow path (flow path B) 65 described later.
  • a through hole H is formed to allow the air to pass therethrough.
  • the retainer ring 17 has a plurality of circumferentially arranged gaps K formed between the inner peripheral surface 17a and the outer peripheral surface of the carrier 16 and a flow path for supplying the slurry or the cleaning liquid.
  • a second flow path 65 is formed.
  • the second flow path 65 communicates from the upper surface 17b of the retainer ring 17 to the inner peripheral surface 17a.
  • a total of four second flow paths 65 are formed at substantially equal angles in the circumferential direction of the retainer ring 17.
  • a second flexible pipe 57 having a part of flexibility is passed through the through hole H of the retainer ring fixing ring 22 and the diaphragm 15.
  • the open end on the upper surface 17 b side is connected to a head body conduit 56 formed on the top plate 13 of the head body 12 via a second flexible pipe 57.
  • the retainer ring 17 is allowed to be displaced in the head axis direction due to the deformation of the diaphragm 15 due to the deformation of the second flexible pipe 57.
  • the other end of the second flexible piping 57 has a top plate portion 13 of the head body 12.
  • the slurry / cleaning liquid supply mechanism 31 selectively supplies either one of the slurry and the cleaning liquid via the flexible pipe 57.
  • the diameter of the second flow path 65 is smaller than 2 mm, the slurry is likely to be clogged. If the diameter is larger than 1 O mm, the strength of the retainer ring is reduced. It is desirable that
  • an inner peripheral surface 17a of the retainer ring 17 is connected to the second flow path 65, and the second groove (5) for guiding the slurry or cleaning liquid supplied from the second flow path 65.
  • Grooves B) 68 are formed over the entire circumference. As shown in FIG. 10, the lower inner surface 68 a of the second groove 68 has a shape that is recessed downward, whereby the second flow path 65 is moved from the second flow path 65 to the second flow path 65. The slurry or the cleaning liquid supplied to the second groove 68 is temporarily held, and flows along the second groove 68.
  • the slurry Z cleaning liquid supply mechanism 31 has a slurry supply source 32 and a cleaning liquid supply source 33, which are respectively provided with a second circulation hole 20b and a joint section 5b. 4 is connected via a slurry cleaning liquid supply pipe 3 4.
  • Slurry slurry supply source 3 2 supplies, for example S i 0 2 alkaline slurry and C e 0 2 neutral slurry with using or acidic slurries using AI 2 0 3,, abrasive granules, etc. It is considered to be suitable for the polishing conditions of e-W, such as slurry using
  • the cleaning liquid supply pipe 34 supplies, for example, pure water, a solvent constituting the slurry, or the like as the cleaning liquid.
  • the slurry cleaning liquid supply pipe 34 is connected to the slurry supply source 32 via a first valve 36, and the slurry cleaning liquid supply source 33 is connected to a second valve 3 4. 7, one of the first and second valves 36, 37 is opened and the other is closed, so that either one of the slurry and the cleaning liquid can be selectively used. It is supplied to.
  • the mechanism for switching the supply of the slurry or the cleaning liquid to the slurry cleaning liquid supply pipe 34 is not limited to the mechanism using the first and second valves 36 and 37 as described above. Any mechanism commonly used for switching connections can be used.
  • c-wa W is, for example, a wafer-adhering sheet (not shown) provided on the lower surface of the carrier 16. Adhered to. Then, while the periphery of the wafer W is locked by the retainer ring 17, the surface thereof is brought into contact with the polishing pad 4 attached to the upper surface of the platen 3. At this time, the lower surface of the relining ring 17 is also in contact with the polishing pad 4.
  • the first and second valves 36 and 37 of the slurry cleaning liquid supply mechanism 31 are both closed.
  • the pressure in the fluid chamber 27 is adjusted by flowing a fluid such as air from the first flow hole 20 a into the fluid chamber 27, and the pressure is adjusted to the carrier 16 and the polishing pad 4 of the retainer ring 17. Adjust the pressing pressure of.
  • the carrier 16 and the retainer ring 17 have a floating structure that is supported by the diaphragm 15 and can be displaced in the vertical direction.
  • the carrier 16 and the retainer ring 17 are applied to the polishing pad 4 by the pressure inside the fluid chamber 27. Pressing pressure can be adjusted.
  • the platen 3 is rotated, and the polishing head 61 is rotated.
  • the first valve 36 of the slurry Z cleaning liquid supply mechanism 31 is opened, and the slurry is supplied from the slurry supply source 32 into the slurry cleaning liquid supply pipe 34. Thereafter, the first valve 36 is kept open during polishing of wafer W.
  • Slurry Z The slurry supplied to the cleaning liquid supply pipe 34 is supplied to the second circulation hole 20b provided in the shaft 19 of the head body 12 and the top plate of the head body 12 It is also supplied into the head body conduit 56 through the joint 54 provided in 13.
  • the slurry supplied to the second flow hole 20 b is supplied to the first flow path 62 of the carrier 16 through the first flexible pipe 53.
  • the slurry guided to the outer peripheral surface 16 a by the first flow path 62 is guided to the entire periphery of the outer peripheral surface 16 a by the first groove 64 formed in the outer peripheral surface 16 a, Since it flows down from the entire circumference of 16a, the gap K formed between the outer circumference 16a and the inner circumference 1a of the retainer ring 17 Slurry is supplied all around.
  • the carrier 16 is cooled by the slurry flowing in the first flow path 62.
  • the horizontal portion 62b of the first flow path 62 is formed close to the lower surface of the carrier 16 and is formed substantially radially from the center of the carrier 16 to the outer periphery.
  • the slurry is cooled over the entire vicinity of the lower surface receiving the processing heat.
  • the horizontal portion 62 b be provided as much as possible within a range that does not reduce the strength of the carrier 16, and be provided close to the lower surface side.
  • the centrifugal force generated by the rotation of the polishing head 61 causes the slurry supplied into the horizontal portion 62b to be sent out toward the outer peripheral surface 16a. Supply is performed smoothly.
  • the slurry supplied to the head main body conduit 56 is supplied to the second flow passage 65 of the retainer ring 17 through the second flexible piping 57.
  • the slurry guided to the inner peripheral surface 17a by the second flow path 65 is guided to the entire periphery of the inner peripheral surface 17a by the second groove 68 formed in the inner peripheral surface 17a.
  • the slurry flows down from the entire circumference of the inner peripheral surface 17a, so that the slurry is supplied to the entire circumference in the gap K formed between the inner peripheral surface 17a and the outer peripheral surface 16a of the carrier 16. You.
  • the slurry is directly supplied between the wafer W and the polishing pad 4 without being hindered by the rotating and re-ringing 17 of the platen 3.
  • the supply of the slurry from the slurry / cleaning liquid supply mechanism 31 to the first and second flow paths 62, 65 is stopped, and instead, the first,
  • the cleaning liquid By supplying the cleaning liquid into the second flow paths 62, 65, the cleaning liquid spreads throughout the first and second flow paths 62, 65 and the entire circumferential direction of the gap K in the same manner as the slurry.
  • the slurry remaining in the first and second flow paths 62 and 65 and the gap K can be washed away.
  • the slurry is formed outside the carrier 16.
  • the rotation of the platen 3 and the retainer ring 17 do not hinder the rotation.
  • the slurry is directly supplied between the pad W and the polishing pad 4.
  • the slurry is introduced into the first groove 64 formed on the outer peripheral surface 16 a of the carrier 16 and the second groove 68 formed on the inner peripheral surface 17 a of the retainer ring 17. And the slurry is supplied to the entire circumference in the gap K, so that the slurry is almost uniformly supplied between the wafer W and the polishing pad 4 from the entire circumference of the wafer W, and the entire surface of the wafer W
  • the polishing amount can be made substantially uniform.
  • the retainer ring 17 is not affected by the centrifugal force generated by the rotation of the polishing head 61 and the platen 3. Hard to flow to the outer periphery of Therefore, polishing can be performed efficiently with the minimum amount of slurry used, and the amount of expensive slurry used can be reduced.
  • the reslurry is evenly supplied to the surface of the polishing pad 4 by the rotation of the polishing head 61 itself, so that the slurry can efficiently contribute to polishing.
  • the carrier 16 is cooled by the slurry flowing in the first flow path 62, so that the thermal deformation of the carrier 16 is reduced.
  • the polishing accuracy of wafer W can be improved.
  • the slurry is applied to the entire vicinity of the lower surface of the carrier 16 receiving the processing heat. Cooling can be performed, and the thermal deformation of the carrier 16 can be suppressed more effectively. Further, when polishing the wafer W, the slurry can be smoothly supplied to the outer peripheral surface 16a of the carrier 16 by the centrifugal force generated by the rotation of the polishing head 61.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the first and second flow paths 62, 65 is stopped.
  • the slurry remaining in the first and second flow paths 62, 65 and the gap K is dried by supplying the cleaning liquid into the first and second flow paths 62, 65. Alternatively, it can be washed away with a cleaning solution before deterioration.
  • the head body 12 has a structure in which the joint part 54 provided on the top plate part 13 and the second flow path 65 of the retainer ring 17 are connected.
  • a head main body conduit 56 communicating with the fluid chamber 27 was formed in the plate portion 13, and the head main body conduit 56 and the second flow path 65 were arranged in the fluid chamber 27.
  • An example of connection by the second flexible piping 57 was shown.
  • the present invention is not limited to this.
  • a head main body conduit 72 is formed from the joint portion 54 to the inner peripheral surface of the step portion 14a of the peripheral wall portion 14, and the upper surface of the retainer ring 17 is formed in the second flow path 65. Open the end that had been opened to 17 b to the outer peripheral surface 17 c, and connect this open end and the open end of the step 14 a side of the head body conduit 72 to the second flexible pipe 57. Connection may be used.
  • FIG. 12 is a perspective view showing the configuration of the polishing apparatus according to the present embodiment.
  • the same or similar parts as those of the conventional polishing apparatus shown in FIG. 15 will be described using the same reference numerals.
  • a polishing apparatus 111 has a polishing pad 4 provided on a platen 3 attached to a center shaft.
  • a polishing head rotated by a head driving mechanism (not shown) is disposed at a position eccentric from the center axis of the polishing pad, and a spraying device 112 for blowing gas or slurry onto the surface of the polishing pad 4 is provided.
  • the configuration is provided.
  • the spraying device 1 1 2 includes a nozzle 1 13 for discharging gas or slurry, and a nozzle moving mechanism 1 1 4 for moving the nozzle 1 13 toward the surface of the polishing pad 4 while facing the polishing pad 4. And A plurality of sets of the nozzles 113 and the nozzle moving mechanism 114 may be provided.
  • a gas supply source 116 is connected to the nozzle 113 through a first pipe 117.
  • the gas supply source 116 supplies a gas that does not contaminate or deteriorate the polishing pad 4, such as clean dry air or an inert gas.
  • the first pipe 1 17 is provided with a first valve 1 18 that controls the supply of gas to the nozzle 1 13 and the stop of supply by opening and closing the first valve 1 18 You can do it.
  • the first valve 118 may be configured to be opened and closed manually, or may be configured to be opened and closed by a control device (not shown).
  • the nozzle moving mechanism 114 moves the nozzle 113 on the surface of the polishing pad 4 at least over an area used for polishing the workpiece, and is an optional nozzle generally used for moving members. Can be adopted.
  • the nozzle moving mechanism 114 includes a support shaft 121 provided on the side of the platen 3 and an arm 122 supporting one end 122 a on the support shaft 121. And a drive device (not shown) for rotating the support shaft 122 around the axis.
  • the other end 1 2 2b of the arm 1 2 2 is provided with a nozzle 1 13, and the rotating shaft 1 2 1 is rotated by the driving device, so that the polishing pad 4 is supported on the support shaft 1 2 1 as a fulcrum.
  • the nozzle 1 13 provided on the other end 1 2 2 b is swung on a plane along the surface of the polishing pad 4 so as to be moved on a plane along the surface of the polishing pad 4.
  • the arm 1 2 2 moves the other end 1 2 2 b from the position facing the rotation center C of the polishing pad 4 toward the radially outer peripheral side of the polishing pad 4 to at least polish the material to be polished. It can be moved to a position opposite to the radially outermost position of the used area.
  • the polishing apparatus 111 has a feature in an initial polishing step after dressing the polishing pad 4 or in a polishing step performed after the previous polishing step.
  • pure water PW is used as a liquid to be supplied onto polishing pad 4 during dressing and rinsing.
  • the nozzles 1 13 are rotating while the polishing pad 4 is rotating. It is located at a position facing the heart C.
  • the platen 3 is driven to rotate the polishing pad 4.
  • the rotation center C of the polishing pad 4 is changed.
  • the gas is blown spirally from the center of the polishing pad 4 toward the radially outer peripheral side, and the pure water PW is flushed from the center of rotation C of the polishing pad 4 toward the radially outer peripheral side.
  • the distance that the nozzle moving mechanism 114 moves the nozzle 113 toward the radially outer peripheral side of the polishing pad 4 while the polishing pad 4 rotates is determined by the amount of pure water PW on the surface of the polishing pad 4.
  • the area D 1 where the water is swept away and the area D 2 where the pure water PW is newly swept away by the gas are within a range that is continuous in the radial direction, whereby the pure water on the polishing pad 4 is formed. PW is being washed away without exception.
  • the spraying device 112 blows gas from the center of rotation C of the surface of the polishing pad 4 to at least a radially outermost position of a region used for polishing the material to be polished.
  • the slurry is supplied to the surface of the polishing pad 4 in the same manner as in the conventional polishing apparatus 1. While polishing, a new material to be polished is polished. According to the polishing apparatus 111 configured as described above, the gas is blown onto the surface of the polishing pad 4 by the spraying apparatus 1 1 2 so that the gas is applied onto the polishing pad 4 after dressing or after the previous polishing step. The remaining pure water PW can be removed, and even if the slurry is supplied onto the polishing pad 4, the slurry is not diluted by the pure water PW.
  • the present invention is particularly effective for polishing such a silicon wafer. Further, the polishing pressure can be suppressed to 10 to 50 kPa, preferably 13 to 40 kPa.
  • the nozzle 113 is directed to the surface of the polishing pad 4.
  • the nozzle 113 is inclined toward the radially outer peripheral side with respect to the surface of the polishing pad 4. You may.
  • the gas is discharged from the nozzles 11 to 13 toward the radially outer peripheral side of the polishing pad 4, so that the pure water PW on the polishing pad 4 is directed toward the radially outer peripheral side of the polishing pad 4. It can be washed away effectively.
  • the spraying device 1 12 is configured to connect the gas supply source 116 to the nozzle 113 and blow the gas to the polishing pad 4.
  • the present invention is not limited to this.
  • a slurry supply source for supplying slurry may be connected to the nozzle 113, and the slurry may be sprayed from the nozzle 113 to the polishing pad 4.
  • the slurry sprayed on the surface of the polishing pad 4 flushes the pure water PW on the polishing pad 4 to remove the pure water PW. Since the slurry can be replaced with a slurry, it is more efficient than the conventional method in which the slurry is simply supplied onto the polishing pad 4 and the pure water PW is flushed from the polishing pad 4 by the flow of the slurry. Pure water PW can be washed away, and the amount of slurry used for replacing pure water PW with slurry can be reduced.
  • the nozzle moving mechanism 114 is configured to move the nozzle 113 in the radial direction of the polishing pad 4.
  • the nozzle 4 may be configured so that the nozzles 11 and 13 are moved at least over the entire area of the surface of the polishing pad 4 used for polishing the workpiece. In this case, with the polishing pad 4 stationary, the nozzle 113 is moved by the nozzle moving mechanism 114 while discharging the gas or slurry from the nozzle 113, and at least on the above-mentioned region on the surface of the polishing pad 4. To remove pure water PW and slurry in this area. Spraying. Seventh embodiment
  • FIG. 13 is a longitudinal sectional view showing the configuration of the polishing apparatus according to the present embodiment.
  • the same or similar parts as those of the polishing apparatus 111 shown in the sixth embodiment will be described using the same reference numerals.
  • the polishing apparatus 13 1 according to the present embodiment is different from the polishing apparatus 1 11 shown in the sixth embodiment in that the nozzle 1 13 and the gas supply source 1 16 are used alone. Instead, a slurry supply source 1 32 was connected.
  • Slurry supply source 1 3 2 is connected to the nozzle 1 1 3 through the second pipe 1 3 3.
  • the second pipe 13 3 is provided with a second valve 13 4 .By opening and closing the second valve 13 4, the supply of the slurry to the nozzle 13 and the stop of the supply are stopped. You can control it.
  • the nozzle body 1 13 a of the nozzle 1 13 is provided with a first flow path 1 13 c connecting the first pipe 1 17 and the discharge port 1 13 b.
  • the first flow path 113c is connected to a second flow path 113d leading to the second pipe 133.
  • the nozzle 113 supplies gas from the first pipe 113 to the first flow path 113c, and utilizes the bench lily effect to make the second pipe 133 from the second pipe 133.
  • the slurry supplied into the flow path 113d is sucked out and discharged from the discharge port 113b.
  • a cleaning liquid supply source 136 for supplying a cleaning liquid such as pure water, for example, is connected to the nozzle 113 via a third pipe 137.
  • the third pipe 1337 is provided with a third valve 1338.By opening and closing the third valve 1338, the supply of the cleaning liquid to the nozzle 113 and the stop of the supply are stopped. Can be controlled.
  • the second and third valves 13 4 and 13 8 may be configured to be manually opened and closed, or may be configured to be opened and closed by a control device (not shown).
  • the third pipe 13 7 is connected to the second pipe 13 3 at a position near the connection with the nozzle 11 3, and the third pipe 13 7 is connected to the nozzle 11 via the second pipe 13 3 Connected with 3.
  • the cleaning liquid is supplied from the cleaning liquid supply source 1336 to the second flow path 113d of the nozzle 113 through the third pipe 133 and the second pipe 133. It is discharged from the discharge port 113 b through one channel 113 c.
  • This polishing apparatus 131 like the polishing apparatus 111 shown in the sixth embodiment, has a feature in the first polishing step after dressing or in the polishing step performed after the previous polishing step. ing.
  • polishing step first, pure water PW on the polishing head 4 is removed by gas, as in the polishing step by the polishing apparatus 11.
  • the nozzle 1 13 is again moved by the nozzle moving mechanism 114 so that the nozzle 113 faces the rotation center C of the polishing pad 4 (or the radially innermost peripheral position of the region used for polishing the workpiece in the polishing pad 4). Position.
  • the slurry is sprayed from the nozzles 113 onto the surface of the polishing pad 4, and the platen 3 is driven to rotate the polishing pad 4, and the nozzle 113 is polished by the nozzle moving mechanism 114.
  • the pad 4 is moved toward the radially outer peripheral side.
  • the slurry is sprayed spirally from the rotation center C (or the radially inner peripheral side) of the polishing pad 4 toward the radially outer peripheral side.
  • the nozzle moving mechanism 1 1 4 moves the nozzle 1 1 3 0777
  • the distance by which the slurry is moved to the outer peripheral side in the radial direction of the polishing pad 4 is within a range in which the area where the slurry is already sprayed on the surface of the polishing pad 4 and the area where the slurry is newly sprayed are continuous in the radial direction. As a result, the slurry can be evenly sprayed on the surface of the polishing pad 4.
  • the cleaning liquid is supplied from the cleaning liquid supply source 1 36 while the nozzle 1 13 is retracted from above the polishing pad 4 by the nozzle moving mechanism 1 14. It is supplied into the nozzle 113 and the slurry inside the nozzle 113 is washed away with the cleaning liquid, so that it is ready for the next use. By washing the inside of the nozzle 113 in this way, clogging of the slurry inside the nozzle 113 can be prevented.
  • the spraying apparatus 1 12 is configured to selectively blow one of the gas and the slurry to the polishing pad 4.
  • the slurry is sprayed on the polishing pad 4 so that the slurry not diluted by the pure water PW on the polishing pad 4 as shown in Fig. 13 Layer P can be formed.
  • the slurry P is formed directly on the polishing pad 4 by spraying the slurry on the polishing pad 4. The consumption of the slurry can be reduced as compared with the method of forming the slurry layer by the flow.
  • polishing according to the present invention when polishing the wafer W by the polishing method according to the present invention using the polishing head according to the present invention (hereinafter referred to as polishing according to the present invention), and using the conventional polishing head, The polishing performance was compared between the case where the wafer W was polished by the conventional polishing method (hereinafter referred to as conventional polishing).
  • the polishing head 61 shown in the fifth embodiment was used as the polishing head according to the present invention.
  • polishing in order to obtain sufficient polishing performance, it is necessary to supply a slurry flow rate of about 100 mL Zmin per polishing head. Polishing, the slurry flow rate can be reduced to 1 Om L Zmin per polishing head without deteriorating the polishing performance, which is about 110 compared to conventional polishing. Was.
  • the wafer W can be polished in such a state that the amount of the slurry used is remarkably reduced, the total amount of slurry aggregated particles is reduced. Micro scratches generated in W are reduced.
  • the present invention is particularly effective for polishing such a silicon wafer.
  • polishing tests were carried out under the same polishing conditions for polishing after removal and polishing when replacing with pure water and slurry without using the spraying device. The polishing performance was compared. The results are shown below.
  • polishing performance attention was paid to the polishing rate and in-plane uniformity (flatness) of the material to be polished, and the relationship between the flow rate of the slurry supplied onto the polishing pad 4 and the polishing performance was also verified.
  • the polishing rate and in-plane uniformity are clearly reduced when the spraying device 12 is not used, whereas the spraying device 1 12 is not used.
  • the reduction in polishing rate and the reduction in in-plane uniformity were slight. This tendency becomes more remarkable as the flow rate of the slurry is reduced, and under the condition that the flow rate of the slurry is 10 cc Zmin, the polishing rate when the spraying device 12 is not used is the highest. It is 40% lower than when the birds were high.
  • the polishing rate was reduced by only 20% compared to the case where the polishing rate was the highest, even if the flow rate of the slurry was reduced. . Also, the degree of deterioration of the in-plane uniformity is reduced. This is because when the spraying device 112 is not used, the slurry is diluted by pure water remaining on the polishing pad 4 and polishing is performed in a state where there is a difference in the slurry concentration at various points of the polishing pad 4. On the other hand, when the spraying device 1 1 and 2 were used, the slurry on the polishing pad 4 was not diluted, and the slurry concentration at each part of the polishing pad 4 was uniform. This is probably because polishing was performed in this state.
  • the amount of the slurry is larger than the amount of pure water remaining on the polishing pad. Although it can be maintained, when the flow rate of the slurry decreases, the concentration of the slurry decreases when the spraying device 1 12 is not used, so the difference in polishing performance becomes remarkable as the flow rate of the slurry decreases. It seems to have appeared.
  • the condition that the flow rate of the slurry is small is used. Since the polishing performance can be maintained while maintaining the slurry concentration at a proper level even below, the flow rate of the slurry can be reduced and the consumption of the slurry can be reduced.
  • the slurry passes through the liquid supply passage between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring, that is, the outer periphery of the workpiece. Is supplied to the gap located at The slurry is directly and sufficiently supplied between the workpiece and the polishing pad without being hindered by rolling or retainer ring.
  • the slurry supplied between the workpiece and the polishing pad is surrounded by the retainer ring, and flows out to the outer periphery of the retainer ring even when subjected to centrifugal force due to the rotation of the polishing head and the platen.
  • the slurry can be used efficiently because it is difficult to use. Therefore, polishing can be efficiently performed with a minimum amount of slurry used, and the amount of expensive slurry used can be significantly reduced.
  • the slurry By rotating the polishing head itself, the slurry is evenly supplied to the surface of the polishing pad, and the slurry can be efficiently contributed to polishing.
  • the slurry is supplied to the liquid supply path by the slurry cleaning liquid supply mechanism during polishing.
  • the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped, and the cleaning liquid is supplied to the liquid supply path instead.
  • the slurry remaining in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring can be washed away with the cleaning liquid before the slurry is dried or deteriorated.
  • the outer peripheral surface of the carrier is provided.
  • the slurry supplied to the inner peripheral surface of the retainer ring flows down from the entire periphery by the groove, so that the entire peripheral surface of the workpiece is polished.
  • Luo becomes Rukoto slurry is substantially uniformly supplied between the polishing pad and the object of polishing, it can be made substantially uniform amount of polishing the entire surface of the object to be polished.
  • the entire carrier can be cooled by the liquid, and the thermal deformation of the carrier can be more effectively suppressed. it can. Further, when polishing the material to be polished, the slurry can be smoothly supplied to the outer peripheral surface of the carrier by the centrifugal force generated by the rotation of the polishing head.
  • an elastic body is provided in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring so as to allow a relative displacement in the up and down direction and connected to the elastic body. Even if the mouth is provided, it is obstructed by the rotation of the platen and the retainer ring. A sufficient amount of slurry is directly supplied between the material to be polished and the polishing pad, and the slurry is surrounded by the retainer and hardly flows out, so that the slurry can be efficiently used with a minimum amount of slurry. Polishing can be performed. The reslurry is evenly supplied to the polishing pad surface by the rotation of the polishing head itself.
  • the slurry remaining in the supply port and in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring is removed before the slurry is involved or deteriorated. It can be washed away with a washing liquid.
  • at least one of a gas and a slurry is sprayed on the surface of the polishing pad by the spraying device, and the liquid remaining on the polishing pad is flushed and removed. This eliminates the need for the slurry that had been supplied on the polishing pad to remove the liquid from the polishing pad in the past, or allows the slurry to flush the liquid on the polishing pad more efficiently than in the past. Therefore, the consumption of the slurry can be significantly reduced.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing head (61) comprising a disc-like carrier (16) for holding at the lower surface thereof one surface of a wafer (W), and an annular retainer ring (17) disposed concentrically with, and on the outer periphery of, the carrier (16), held at the inner peripheral surface (17a) thereof by the carrier (16) while in contact with a polishing pad (4) at polishing, and locking the outer periphery of the wafer (W). The carrier (16) is formed with a flow passage (62) for supplying slurry or a cleaning liquid into a clearance (K) between an outer peripheral surface (16a) and the inner peripheral surface (17a) of the retainer ring (17). The flow passage (62) is connected with a slurry/cleaning liquid supply mechanism (31) for selectively supplying either slurry or a cleaning liquid to the passage (62).

Description

PC蘭 2/00777  PC orchid 2/00777
1 1
明細書 研磨へッド、 研磨装置及び研磨方法 技術分野  Description Polishing head, polishing apparatus and polishing method
本発明は、 バ一ジンのシリコンゥェ一ハ (ベアウエーハ) や、 表面にシリコン The present invention relates to a silicon wafer (bare wafer) of virgin or silicon on the surface.
■ゲルマニウム層 (S i G e層) を形成したシリコンゥエーハ、 半導体製造プロ セスにおける半導体ゥ: cーハ、 あるいは、 ハードディスク基板、 液晶基板、 光学 部品レンズ等 (以下、 ゥェ一ハ Wとする) の平坦面を有する被研磨材表面を研磨 するための装置に適用される研磨へッド及び研磨装置、 及びこれを用いた被研磨 材の研磨方法に関する。 背景技術 ■ Silicon wafer with germanium layer (SiGe layer) formed, semiconductor in semiconductor manufacturing process: c-ha, or hard disk substrate, liquid crystal substrate, optical component lens, etc. (hereinafter referred to as wafer W) The present invention relates to a polishing head and a polishing apparatus applied to a device for polishing a surface of a workpiece having a flat surface, and a method for polishing a workpiece using the same. Background art
近年、 半導体製造装置の高集積化に伴うパターンの微細化が進んでおり、 特に 多層構造の微細なパタ^"ンの形成が容易かつ確実に行われるために、 製造工程中 における半導体ゥェ一八の表面を極力平坦化させることが重要となってきている In recent years, the pattern miniaturization has been progressing along with the high integration of semiconductor manufacturing equipment. In particular, since a fine pattern of a multilayer structure can be easily and surely formed, a semiconductor pattern during a manufacturing process is required. It is important to flatten the surface of the eight as much as possible
。 例えば、 パターンの形成は光リソグラフィを用いて行っているが、 パターンが 微細化するにつれて光リソグラフィの焦点深度は浅くなる。 そして、 パターンの 精度を確保するため、 また露光時の焦点調節を容易にするためには、 ゥエーハ表 面での凹凸の差を焦点深度以下に納められるようにすること (平坦化すること) が要求される。 またべアウエ一八の研磨においても、 ゥ: Γ一八の大径化に伴い、 平坦化への要求が厳しくなつてきている (ここではゥエーハの場合を例にとって 説明しているが、 これらゥ: Lーハ以外の被研磨材、 例えばハードディスク基板や 液晶基板などの研磨においても表面を高精度に平坦化することが要求される) 。 そこで、 表面の膜を高精度に平坦化し、 かつゥエーハ表面の凹部への膜の埋め 込みを可能にするという観点から、 化学機械的研磨法 (C M P法) が脚光を浴び ている。 . For example, the pattern is formed using optical lithography, but as the pattern becomes finer, the depth of focus of optical lithography decreases. In order to ensure pattern accuracy and facilitate focus adjustment during exposure, it is necessary to make the difference in unevenness on the surface of the wafer less than the depth of focus (flatten). Required. Also in the polishing of Berue 18, ゥ: 要求 With the increase in the diameter of 18, the demand for flattening is becoming stricter (here, the case of ゥ was described as an example, but these ゥ: Polishing of materials to be polished other than L-ha, such as hard disk substrates and liquid crystal substrates, also requires highly accurate flattening of the surface.) The chemical mechanical polishing method (CMP method) has been spotlighted from the viewpoint that the film on the surface can be flattened with high precision and the film can be embedded in the concave portion on the wafer surface.
C M P法とは、 S i 0 2を用いたアルカリ性スラリーや C e 0 2を用いた中性 スラリー、 あるいは A I 2 0 3を用いた酸性スラリー、 砥粒剤等を用いたスラリ 一等を用いて化学的 '機械的にゥヱーハ表面を研磨し、 平坦化する方法である。 そして、 C M P法を用いてゥエーハの表面を研磨する装置としては、 例えば図 1 5の要部拡大斜視図に示すような研磨装置が知られている。 The CMP method, was used S i 0 2 alkaline slurry and C e 0 2 neutral slurry with using or acidic slurry with AI 2 0 3,, the abrasive agent slurry This is a method of chemically and mechanically polishing and flattening the wafer surface using a first-class method. As an apparatus for polishing the surface of a wafer by using the CMP method, for example, a polishing apparatus as shown in an enlarged perspective view of a main part in FIG. 15 is known.
この研磨装置 1は、 図 1 5に概略的に示すように、 中心軸 2に取り付けられた 円板状のプラテン 3上に例えば硬質ウレタンからなる研磨パッド 4が設けられ、 この研磨パッド 4に対向してかつプラテン 3の中心軸 2から偏心した位置に、 図 示せぬへッド駆動機構によって回転駆動される研磨へッド 5が配設されているも のである。  As schematically shown in FIG. 15, the polishing apparatus 1 is provided with a polishing pad 4 made of, for example, hard urethane on a disk-shaped platen 3 attached to a center shaft 2. In addition, a polishing head 5 that is rotationally driven by a head driving mechanism (not shown) is disposed at a position eccentric from the center axis 2 of the platen 3.
研磨ヘッド 5は、 図示しないが、 下面においてゥエーハ Wの一面を保持する円 盤状のキャリアと、 キヤリァの外周に同心状に配置される円環状のリ亍ーナリン グとを有している。 リテーナリングは、 研磨時には研磨パッド 4に当接されるも のであって、 その内周面でキャリアに保持されるゥエーハ Wの外周を係止すると ともに、 下面で研磨パッド 4を押圧してゥェーハ Wの外周近傍における研磨パッ ド 4の変形を抑えて、 ゥヱーハ Wの研磨精度を確保するものである。  Although not shown, the polishing head 5 has a disc-shaped carrier that holds one surface of the wafer W on the lower surface, and an annular relining that is arranged concentrically around the outer periphery of the carrier. The retainer ring comes into contact with the polishing pad 4 at the time of polishing. The inner surface of the retainer ring holds the outer periphery of the wafer W held by the carrier, and the lower surface of the polishing pad 4 presses the wafer W to polish the wafer W. The deformation of the polishing pad 4 in the vicinity of the outer periphery of the wafer is suppressed, and the polishing accuracy of wafer W is ensured.
そして、 この研磨装置 1では、 ゥェーハ Wの研磨に際して、 上記したスラリー Sが研磨パッド 4の回転中心 C近傍に供給される。 このスラリー Sは、 研磨パッ ド 4上を流れることにより、 また研磨パッド 4の回転に伴って生じる遠心力を受 けることによって、 研磨パッド 4上で径方向外周側に向けて広がり、 研磨へッド 5に保持されたゥエーハ Wと研磨パッド 4との間に流動する。 この状態で研磨へ ッド 5に保持されたゥ: Lーハ Wが自転し、 同時に研磨パッド 4が中心軸 2を中心 として回転するために、 研磨パッド 4でゥエーハ Wの一面が研磨される。  In the polishing apparatus 1, the slurry S described above is supplied to the vicinity of the rotation center C of the polishing pad 4 when polishing the wafer W. The slurry S spreads toward the outer peripheral side in the radial direction on the polishing pad 4 by flowing on the polishing pad 4 and receiving a centrifugal force generated by the rotation of the polishing pad 4, and Flow between the polishing pad 4 and the wafer W held by the pad 5. In this state, the wafer W was held by the polishing head 5: The wafer L was rotated on its own axis, and at the same time, the polishing pad 4 was rotated about the central axis 2 so that one surface of the wafer W was polished by the polishing pad 4. .
このような研磨装置 1では、 まず初めに研磨パッド 4の表面状態を調整するた めに、 研磨パッド 4の表面をごくわずかに削り取る作業 (ドレッシング) を行う が、 純水等の液体が研磨パッド上に供給される。 その後スラリー Sを用いてゥェ ーハ Wの研磨を行うが (ゥエーハ Wの研磨とドレッシングとを並行して行う場合 もある) 、 研磨を行った後には純水を研磨パッド 4の表面に供給して、 スラリー Sの代わりにこの純水を用いてゥヱーハ Wの研磨を行う。 これによつてゥエーハ Wの表面の洗浄が行われる (リンス研磨) 。 これらを一つのサイクルとして次々 と新しいゥ:!:ーハ Wの研磨を行う。 このようにドレッシングや前回の研磨を行った後にゥエー/、Wの研磨を行う場 合には、 研磨パッド 4上にスラリー Sを供給して、 このスラリー Sの流れによつ て研磨パッド 4上に残った純水等の液体を押し流しながら研磨を行っていた。 し かし、 スラリー Sが研磨パッド 4上に十分行き渡るまでには時間がかかるため、 研磨の初期段階では研磨パッド 4上に残つた液体によってスラリー Sが薄められ る。 したがって、 研磨パッド 4の各所でスラリー濃度に差が生じている状態でゥ エーハ Wの研磨が行われることとなる。 また、 スラリー Sはプラテン 3の回転に よる遠心力によリ外方へ流出したり、 リテーナリングが障壁となつてリテーナリ ング内周側に保持されるゥエーハ表面まで十分に届かない場合があり、 ゥエーハ Wの中央部が研磨されにくいことがあった。 このため、 ゥエーハ Wの研磨効率の 低下ゃゥヱーハ W面内の均一性の低下が生じてしまう。 In such a polishing apparatus 1, first, in order to adjust the surface condition of the polishing pad 4, a work (dressing) of slightly polishing the surface of the polishing pad 4 is performed. Supplied above. Thereafter, the wafer W is polished using the slurry S (the polishing of the wafer W and the dressing may be performed in parallel), but after the polishing, pure water is supplied to the surface of the polishing pad 4. Then, wafer W is polished using this pure water instead of slurry S. As a result, the surface of wafer W is cleaned (rinse polishing). With these as one cycle, polishing of new ゥ:!: Haha W is performed one after another. In the case where polishing is performed on the polishing pad A / W after the dressing or the previous polishing is performed, the slurry S is supplied onto the polishing pad 4 and the slurry S flows on the polishing pad 4. The polishing was performed while flushing the liquid such as pure water remaining in the wafer. However, since it takes time for the slurry S to sufficiently spread on the polishing pad 4, the slurry S is diluted by the liquid remaining on the polishing pad 4 in the initial stage of polishing. Therefore, the wafer W is polished in a state where there is a difference in the slurry concentration in each part of the polishing pad 4. Also, the slurry S may flow out of the retainer due to the centrifugal force generated by the rotation of the platen 3, or may not reach the surface of the wafer sufficiently, where the retainer ring acts as a barrier and is retained on the inner peripheral side of the retainer ring.ゥ In some cases, the center part of Eha W was difficult to be polished. For this reason, the polishing efficiency of the wafer W decreases.
そこで、 研磨パッド 4上に供給したスラリー Sの流れによって研磨パッド 4上 の液体を押し流して、 研磨パッド 4上の液体とスラリー Sとを置換してからゥェ ーハ Wの研磨を行った場合、 研磨前の段階で研磨パッド 4上に大量のスラリー S を供給する必要があり、 高価なスラリー Sの消費量が増加してしまう。 例えばデ バイスゥヱ一ハ研磨の場合、 スラリー Sのコストは研磨装置の消耗資材費の約 7 0 %を占めているので、 消耗資材費を低減するためにはスラリーの消費量を低減 させることが重要である  Therefore, when the liquid on the polishing pad 4 is swept away by the flow of the slurry S supplied on the polishing pad 4 to replace the liquid on the polishing pad 4 with the slurry S, and then the wafer W is polished. However, it is necessary to supply a large amount of the slurry S onto the polishing pad 4 before the polishing, and the consumption of the expensive slurry S increases. For example, in the case of device polishing, the cost of slurry S accounts for about 70% of the consumable material cost of the polishing equipment, so it is important to reduce the amount of slurry consumed to reduce consumable material cost. Is
本発明は、 このような事情に鑑みてなされたもので、 ゥエーハの研磨を良好に 行うことができる研磨ヘッドを提供することを目的としている。 また、 スラリー の消費量を低減することができる研磨装置及びこれを用いた被研磨材の研磨方法 を提供することを目的としている。 発明の開示  The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a polishing head capable of satisfactorily polishing an wafer. Another object of the present invention is to provide a polishing apparatus capable of reducing the consumption of slurry and a method for polishing a workpiece using the polishing apparatus. Disclosure of the invention
上記の課題を解決するため、 本発明の第一の態様は、 プラテン上に貼付された 研磨パッドの表面に、 該研磨パッドに対して相対的に移動しつつ被研磨材を押し 付けて該被研磨材の研磨を行うための研磨へッドであって、 研磨すべき被研磨材 の一面をその下面で保持するキヤリアと、 前記キヤリァの外周側に同心状に配置 されて、 研磨時には前記研磨パッドに当接しつつ内周面で前記キャリアに保持さ T/JP02/00777 In order to solve the above-described problems, a first aspect of the present invention is to provide a method for pressing a material to be polished against a surface of a polishing pad stuck on a platen while moving relatively to the polishing pad. A polishing head for polishing an abrasive material, a carrier holding one surface of a material to be polished on its lower surface, and a concentrically arranged outer peripheral side of the carrier; While being in contact with the pad, T / JP02 / 00777
4 Four
れる前記被研磨材の外周を係止する円環状のリテーナリングとを有し、 前記キヤ リアの外周面と前記リテーナリングの内周面との間隙に液体を供給するための液 体供給路を形成したことを特徴とする研磨へッドである。 An annular retainer ring that locks an outer periphery of the workpiece to be polished, and a liquid supply path for supplying liquid to a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the retainer ring. A polished head characterized by being formed.
このように構成される研磨ヘッドにおいては、 被研磨材の研磨時には、 液体が 液体供給路を通じて、 被研磨材の一面を保持するキャリアの外周面とリテ一ナリ ングの内周面との間隙、 すなわち被研磨材の外周に位置する間隙に供給されるの で、 プラテンの回転ゃリテーナリングに妨げられることなく、 被研磨材と研磨パ ッドとの間に液体が直接供給される。  In the polishing head configured as described above, when polishing the material to be polished, the liquid passes through the liquid supply passage, and the gap between the outer peripheral surface of the carrier holding one surface of the material to be polished and the inner peripheral surface of the retaining ring, That is, since the liquid is supplied to the gap located on the outer periphery of the material to be polished, the liquid is directly supplied between the material to be polished and the polishing pad without being hindered by the rotation / retainer ring of the platen.
これにより、 被研磨材と研磨パッドとの間に十分な量の液体を供給することが できる。 また、 被研磨材と研磨パッドとの間に供給された液体は、 リ亍ーナリン グによって周囲を囲われていて、 研磨へッドゃプラテンの回転による遠心力を受 けてもリテーナリングの外周に流出しにくいので、 液体を効率的に使用すること ができ、 例えば高価なスラリ一の使用量を低減することができる。  Thus, a sufficient amount of liquid can be supplied between the workpiece and the polishing pad. In addition, the liquid supplied between the workpiece and the polishing pad is surrounded by the relining, and the outer periphery of the retainer ring is affected by the centrifugal force caused by the rotation of the polishing head and the platen. Since the liquid does not easily flow out, the liquid can be used efficiently, and for example, the amount of expensive slurry used can be reduced.
ここで、 研磨ヘッドにおいて、 キャリアは、 被研磨材の研磨時に生じる加工熱 を受けて加熱されるが、 キャリアに熱変形が生じるとその変形がキャリアに保持 される被研磨材にも影響して被研磨材の研磨精度が低下してしまう。 本態様にか かる研磨へッドでは、 液体供給路を通過する液体によってキャリアの冷却が行わ れるので、 キャリアの熱変形を低減して被研磨材の研磨精度を向上させることが できる。  Here, in the polishing head, the carrier is heated by receiving the processing heat generated during polishing of the material to be polished. When the carrier is thermally deformed, the deformation affects the material to be polished held by the carrier. Polishing accuracy of the workpiece is reduced. In the polishing head according to this aspect, since the carrier is cooled by the liquid passing through the liquid supply passage, the thermal deformation of the carrier can be reduced, and the polishing accuracy of the workpiece can be improved.
また、 前記液体供給路は前記キヤリアに設けた流路 A及び前記リテーナリング に設けた流路 Bの少なくとも一方であってもよい。  Further, the liquid supply path may be at least one of a flow path A provided in the carrier and a flow path B provided in the retainer ring.
流路 A及ぴ流路 Bが両方設けられた場合、 二箇所から被研磨材と研磨パッドと の間にスラリーを供給することが可能なので、 スラリー供給量を増加させること ができる。  When both the flow path A and the flow path B are provided, the slurry can be supplied between the workpiece and the polishing pad from two locations, so that the slurry supply amount can be increased.
また、 前記液体供給路はスラリー及び洗浄液の何れか一方を選択的に供給する スラリー 洗浄液供給機構に接続されてもよい。  Further, the liquid supply path may be connected to a slurry cleaning liquid supply mechanism for selectively supplying one of a slurry and a cleaning liquid.
特にスラリーは、 次第に乾燥したり変質するなどして研磨へッドの隙間に詰ま リやすく、 このようなスラリーが研磨パッド上に落ちると被研磨材の表面にスク ラッチを生じさせる要因となる。 本態様にかかる研磨ヘッドでは、 研磨作業を終 えた際などの適宜時期に、 スラリー 洗浄液供給機構から液体供給路へのスラリ —の供給を停止し、 代わりに、 液体供給路内に洗浄液を供給することで、 液体供 給路内、 及びキャリアの外周面とリテーナリングの内周面との間隙に残留してい るスラリーを洗浄液によって洗い流すことができる。 洗浄液として、 例えば、 純 水や、 スラリーを構成する溶媒等を用いても良い。 In particular, the slurry tends to gradually clog in the gaps between the polishing heads as it gradually dries or deteriorates, and if such slurry falls on the polishing pad, it may cause scratches on the surface of the workpiece. In the polishing head according to this aspect, the polishing operation is completed. At an appropriate time, such as when the slurry is supplied, the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped, and the cleaning liquid is supplied into the liquid supply path instead. The slurry remaining in the gap between the outer peripheral surface and the inner peripheral surface of the retainer ring can be washed away with the cleaning liquid. As the cleaning liquid, for example, pure water, a solvent constituting a slurry, or the like may be used.
また、 前記キャリアの外周面の全周に、 前記流路 Aに接続され流路 Aから前記 液体が供給される溝 Aが形成されていてもよい。  Further, a groove A connected to the flow path A and supplied with the liquid from the flow path A may be formed on the entire outer circumference of the carrier.
さらに、 前記リテーナリングの内周面の全周に、 前記流路 Bに接続され流路 B から前記液体が供給される溝 Bが形成されていてもよい。  Further, a groove B connected to the flow path B and supplied with the liquid from the flow path B may be formed on the entire circumference of the inner peripheral surface of the retainer ring.
被研磨材と研磨パッドとの間で、 スラリーが局所的に供給されると、 その部分 で被研磨材の研磨が部分的に進行してしまう。 しかし、 上記のようにキャリアに 流路 Aを形成した場合には、 キャリアに溝 Aを設けることで、 流路 Aによりキヤ リアの外周面に供給されたスラリーは、 溝 Aにより外周面の全周に導かれ、 外周 面の全周から流れ落ちる。 同様に、 リテーナリングに流路 Bを設けた場合には、 リテーナリングに溝 Bを設けることで、 流路 Bによリリテーナリングの内周面に 供給されたスラリーは、 溝 Bにより内周面の全周に導かれ、 内周面の全周から流 れ落ちる。 これによつて、 被研磨材の外周全周から、 被研磨材と研磨パッドとの 間にスラリ一がほぼ均一に供給されることとなり、 被研磨材の全面で研磨量をほ ぼ均一にすることができる。  If the slurry is locally supplied between the polishing material and the polishing pad, polishing of the polishing material partially proceeds in that portion. However, when the flow path A is formed in the carrier as described above, by providing the carrier with the groove A, the slurry supplied to the outer peripheral surface of the carrier by the flow path A can be completely removed by the groove A. It is guided to the circumference and flows down from the entire circumference of the outer peripheral surface. Similarly, when the flow path B is provided in the retainer ring, the groove B is provided in the retainer ring, so that the slurry supplied to the inner peripheral surface of the retainer ring by the flow path B has an inner circumferential surface formed by the groove B. It is guided along the entire circumference of the surface and flows down from the entire circumference of the inner peripheral surface. As a result, the slurry is almost uniformly supplied between the polishing material and the polishing pad from the entire outer circumference of the polishing material, and the polishing amount is made substantially uniform over the entire surface of the polishing material. be able to.
また、 スラリー 洗浄液供給機構からの流路 、 Bへのスラリーの供給を停止 し、 代わりに流路 、 B内に洗浄液を供給することで、 キャリアの外周面とリテ —ナリングの内周面との間に形成される隙間の周方向の全範囲に洗浄液を行き渡 らせて、 残留しているスラリーをより効果的に洗い流すことができる。  Also, the supply of the slurry to the flow path and the slurry B from the slurry cleaning liquid supply mechanism is stopped, and the cleaning liquid is supplied to the flow path and the B instead. The cleaning liquid can be spread over the entire circumferential range of the gap formed therebetween, and the remaining slurry can be more effectively washed away.
また、 流路 Aをキャリアの上面中央から外周面の複数箇所に通じさせ、 かつ中 央から外周側に向けて略放射状に形成してもよい。  Further, the flow path A may be communicated from the center of the upper surface of the carrier to a plurality of locations on the outer peripheral surface, and may be formed substantially radially from the center to the outer peripheral side.
キヤリァの外周にほぼ均一にスラリーを供給することができ、 またキヤリァ全 体に流路 Aが形成されるので、 流路 Aを通過するスラリーによってキャリアがよ リ効果的に冷却される。 また、 被研磨材の研磨時には、 研磨ヘッドの回転に伴つ て生じる遠心力によって流路 A内に供給されたスラリ一が外周面に向けて送り出 されるので、 キャリア外周面へのスラリーの供給をスムーズに行うことができる また、 液体供給路は円環状で、 直径が 2 mm以上 1 O m m以下に形成されてい てもよい。 The slurry can be supplied almost uniformly to the outer periphery of the carrier, and the flow path A is formed in the entire carrier, so that the slurry passing through the flow path A cools the carrier more effectively. Also, when polishing the material to be polished, the slurry supplied into the flow path A is sent out to the outer peripheral surface by centrifugal force generated by the rotation of the polishing head. Therefore, the slurry can be smoothly supplied to the outer peripheral surface of the carrier. Further, the liquid supply path may be formed in an annular shape and have a diameter of 2 mm or more and 1 O mm or less.
円環状の液体供給路の直径が 2 m mよりも小さいと、 スラリ一が詰まリやすく なり、 1 O m mよりも大きくなると、 液体供給路の形成されるキャリアやリテー ナリングの強度が低下するため、 2 mm以上 1 O m m以下が望ましい。  If the diameter of the annular liquid supply path is smaller than 2 mm, the slurry tends to be clogged, and if it is larger than 1 Omm, the strength of the carrier and the retainer ring that form the liquid supply path decreases. 2 mm or more and 1 O mm or less are desirable.
また、 前記キャリアの外周面と前記リテーナリングの内周面との間隙にこれら の上下方向への相対的な変位を許容して接続する弾性体を設け、 前記弾性体に前 記間隙に液体を供給するための供給口を設け、 前記供給口に前記液体供給路を接 続してもよい。  Further, an elastic body is provided in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring to allow relative displacement in the up-down direction and connected, and a liquid is supplied to the elastic body in the gap. A supply port for supplying the liquid may be provided, and the liquid supply path may be connected to the supply port.
このように構成される研磨へッドにおいては、 被研磨材の一面を保持するキヤ リァと被研磨材の外周を係止するリテーナリングとが弾性体を介して接続されて いる。 そして、 液体供給路から供給されるスラリーは、 弾性体に設けられる供給 口を通じて、 キヤリアの外周面とリテーナリングの内周面との間隙に供給される これにより、 プラテンの回転やリテ一ナリングに妨げられることなく、 隙間内 から被研磨材と研磨パッドとの間にスラリーが直接供給されることとなり、 被研 磨材と研磨パッドとの間に十分な量のスラリーを供給することができる。  In the polishing head configured as described above, a carrier that holds one surface of the material to be polished and a retainer ring that locks the outer periphery of the material to be polished are connected via an elastic body. Then, the slurry supplied from the liquid supply passage is supplied to the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring through a supply port provided in the elastic body, whereby the rotation of the platen and the retainer ring are performed. The slurry is directly supplied between the workpiece and the polishing pad from the gap without being hindered, and a sufficient amount of slurry can be supplied between the workpiece and the polishing pad.
また、 被研磨材と研磨パッドとの間に供給されたスラリーは、 リテーナリング によって周囲を囲われていて、 研磨へッドゃプラテンの回転による遠心力を受け てもリテーナリングの外周に流出しにくいので、 スラリーを効率的に使用するこ とができる。  Also, the slurry supplied between the workpiece and the polishing pad is surrounded by a retainer ring, and flows out to the outer periphery of the retainer ring even when subjected to centrifugal force due to the rotation of the polishing head and the platen. It is difficult to use the slurry efficiently.
ここで、 スラリーは、 時間の経過とともに次第に乾燥したり変質、 凝固するな どして研磨へッドの隙間に詰まりやすく、 このようなスラリーが塊状となって研 磨パッド上に落ちると被研磨材の表面にスクラッチを生じさせる要因となる。 そこで、 供給口に接続された液体供給路にスラリー及び洗浄液の何れか一方を 選択的に供給するスラリー Z洗浄液供給機構を設けてもよい。  Here, the slurry is liable to be clogged in the gap between the polishing heads as it gradually dries, changes in quality, and solidifies with the passage of time, and if such slurry falls into a lump on the polishing pad, it is polished. This causes scratches on the surface of the material. Therefore, a slurry Z cleaning liquid supply mechanism for selectively supplying either the slurry or the cleaning liquid may be provided in the liquid supply path connected to the supply port.
この構成では、 研磨時にはスラリー 洗浄液供給機構によって供給口へスラリ 一を供給し、 研磨作業を終えた際などの適宜時期に、 スラリー 洗浄液供給機構 からの供給口へのスラリーの供給を停止し、 代わりに供給口に洗浄液を供給する ことで、 供給口内、 及びキャリアの外周面とリテーナリングの内周面の間隙内に 残留しているスラリーを洗浄液によつて洗い流すことができる。 洗浄液としては 、 例えば純水や、 スラリーを構成する溶媒等を用いてもよい。 With this configuration, the slurry is supplied to the supply port by the slurry cleaning liquid supply mechanism during polishing. At the appropriate time, such as when the polishing work is completed, the supply of the slurry from the slurry cleaning liquid supply mechanism to the supply port is stopped, and the cleaning liquid is supplied to the supply port instead. The slurry remaining in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring can be washed away by the cleaning liquid. As the cleaning liquid, for example, pure water, a solvent constituting a slurry, or the like may be used.
ここで、 研磨ヘッドにおいて、 リテーナリングは、 キャリアに保持される被研 磨材の外周を係止するとともに、 被研磨材の外周近傍における研磨パッドの変形 を抑えるものであるから、 キャリアの外周面とリテーナリングの内周面との間に 形成される隙間は極力小さくすることが望ましい。 しかし、 このように隙間を小 さくすると、 弾性体において隙間内に露出される領域も小さくなつて供給口の大 きさが制限されるので、 供給口からのスラリーまたは洗浄液の供給量が少なくな つてしまう。  Here, in the polishing head, the retainer ring locks the outer periphery of the polishing target material held by the carrier and suppresses deformation of the polishing pad near the outer periphery of the polishing target material. It is desirable that the gap formed between the retainer ring and the inner peripheral surface be as small as possible. However, when the gap is reduced in this manner, the area of the elastic body exposed in the gap is also reduced, and the size of the supply port is limited, so that the supply amount of the slurry or the cleaning liquid from the supply port is reduced. I will.
そこで、 前記キヤリアの外周縁と前記リテーナリングの内周縁の少なくとも一 方に、 前記弾性体と対向する部位に、 他方の周縁部との間に収容空間を形成する 収容部を設け、 前記弾性体には、 前記収容空間に対向する部位に前記供給ロを設 けてもよい。  Therefore, at least one of an outer peripheral edge of the carrier and an inner peripheral edge of the retainer ring is provided at a portion facing the elastic body with a housing portion that forms a housing space between the other peripheral edge portion and the elastic body. Then, the supply roller may be provided at a portion facing the storage space.
この構成では、 キヤリアの外周縁とリテーナリングの内周縁とのうちの少なく とも一方において弾性体と対向する部位には収容空間を形成する収容部が形成さ れる。 弾性体は、 隙間内だけでなく収容空間内にも露出されるので、 キャリアの 外周面とリ亍ーナリングの内周面との間に形成される隙間は小さくしつつ、 弾性 体において供給口を設けることができる領域を確保することができる。  In this configuration, at least one of the outer peripheral edge of the carrier and the inner peripheral edge of the retainer ring faces the elastic body, and a housing portion that forms a housing space is formed. Since the elastic body is exposed not only in the gap but also in the accommodation space, the gap formed between the outer peripheral surface of the carrier and the inner peripheral surface of the reanna ring is reduced, and the supply port is formed in the elastic body. It is possible to secure an area in which it can be provided.
ここで、 被研磨材と研磨パッドとの間で、 スラリーが局所的に供給されると、 その部分で被研磨材の研磨が部分的に進行してしまう。  Here, if the slurry is locally supplied between the polishing target and the polishing pad, polishing of the polishing target partially proceeds at that portion.
そこで、 収容部の設けられる周縁部の全周にわたって収容部が設けられていて もよい。  Therefore, the housing portion may be provided over the entire periphery of the peripheral portion where the housing portion is provided.
この構成では、 供給口から収容空間内に供給されたスラリーは、 収容部によつ て、 収容部の設けられる周縁部の周方向に沿って導かれて、 全周から下方に流れ 落ちる。  In this configuration, the slurry supplied from the supply port into the storage space is guided by the storage section along the circumferential direction of the peripheral portion where the storage section is provided, and flows down from the entire circumference.
これによつて、 被研磨材の外周全周から、 被研磨材と研磨パッドとの間にスラ T/JP02/00777 As a result, a slurry is formed between the polishing material and the polishing pad from the entire outer circumference of the polishing material. T / JP02 / 00777
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リ一がほぼ均一に供給されることとなり、 被研磨材の全面で研磨量をほぼ均一に することができる。 The resin is supplied almost uniformly, and the polishing amount can be made substantially uniform over the entire surface of the material to be polished.
また、 研磨ヘッドにスラリー 洗浄液供給機構とを設けている場合には、 供給 口に洗浄液を供給することで、 キヤリアの外周面とリテーナリングの内周面との 間に形成される隙間の周方向の全範囲に洗浄液を行き渡らせて、 隙間内に残留し ているスラリーをより効果的に洗い流すことができる。  When the polishing head is provided with a slurry cleaning liquid supply mechanism, by supplying the cleaning liquid to the supply port, a circumferential direction of a gap formed between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring is provided. The washing liquid can be spread over the entire area of the gap, and the slurry remaining in the gap can be more effectively washed away.
また、 前記収容部の下面と該収容部の設けられる周縁部の周面との間隙に、 上 方に立設された壁部と、 該壁部の周方向の複数箇所に、 前記収容部と前記周面と を接続する接続路とを有してもよい。  A wall portion that stands upright in a gap between a lower surface of the housing portion and a peripheral surface of a peripheral portion provided with the housing portion; and a plurality of circumferential portions of the wall portion; And a connection path connecting the peripheral surface and the peripheral surface.
この構成では、 収容空間内に供給されたスラリーまたは洗浄液は、 壁部によつ て一旦受けられて、 壁部に沿って収容空間の周方向に流れる。 そして、 スラリー または洗浄液が壁部の周方向の各所に設けられた接続路に達すると、 接続路を通 じてキャリアとリテーナリングとの間に形成される隙間内に流出する。 すなわち 、 収容空間内に供給されたスラリーまたは洗浄液は、 ヘッド本体の周方向の各所 で接続路を通じて隙間内に流出するので、 スラリーや洗浄液を隙間の全周にわた つてより均一に供給することができる。  In this configuration, the slurry or the cleaning liquid supplied into the storage space is once received by the wall and flows along the wall in the circumferential direction of the storage space. Then, when the slurry or the cleaning liquid reaches the connection passages provided at various places in the circumferential direction of the wall portion, the slurry or the cleaning liquid flows out into the gap formed between the carrier and the retainer ring through the connection passage. That is, the slurry or the cleaning liquid supplied into the housing space flows out into the gap through the connection path at various points in the circumferential direction of the head body, so that the slurry or the cleaning liquid can be supplied more uniformly over the entire circumference of the gap. it can.
また、 収容部の下面には、 周面に向かうにつれて次第に下方に向けて傾斜する 傾斜面を設けてもよい。  Further, an inclined surface may be provided on the lower surface of the housing portion so as to be gradually inclined downward toward the peripheral surface.
この構成では、 収容空間内に供給されたスラリーは、 収容部の下面に設けられ た傾斜面に沿って前記隙間に向けて速やかに流れるので、 スラリーに滞留が生じ にく くなつて、 スラリーの乾燥や変質、 凝固を生じにくくすることができる。 また本発明の第二の態様は、 プラテン上に貼付された研磨パッドの表面に、 研 磨へッドにより前記研磨パッドに対して相対的に移動させつつ被研磨材を押しつ けて該被研磨材の研磨を行う研磨方法であって、 上述の研磨ヘッドを用いて、 前 記液体供給路から前記キャリアの外周面と前記リ亍ーナリングの内周面との間隙 にスラリーを供給しながら前記被研磨材の研磨を行う研磨方法である。  With this configuration, the slurry supplied into the storage space flows quickly toward the gap along the inclined surface provided on the lower surface of the storage portion, so that the slurry is less likely to stay and the slurry is Drying, deterioration, and solidification can be suppressed. In a second aspect of the present invention, a material to be polished is pressed against a surface of a polishing pad stuck on a platen while being relatively moved with respect to the polishing pad by a polishing head. A polishing method for polishing an abrasive material, wherein the polishing head is used to supply slurry from the liquid supply path to a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the reanna ring. This is a polishing method for polishing a material to be polished.
このように構成される研磨ヘッドにおいては、 被研磨材の研磨時には、 スラリ —/洗浄液供給機構から供給されるスラリーが、 液体供給路を通じて、 被研磨材 の一面を保持するキャリアの外周面と被研磨材の外周を係止するリテーナリング 02 00777 In the polishing head configured as described above, when polishing the material to be polished, the slurry supplied from the slurry / cleaning liquid supply mechanism passes through the liquid supply path to the outer peripheral surface of the carrier that holds one surface of the material to be polished, and Retainer ring that locks the outer periphery of the abrasive 02 00777
9 9
の内]!面との間隙、 すなわち被研磨材の外周に位置する間隙に供給されるので、 プラテンの回転やリテーナリングに妨げられることなく、 被研磨材と研磨パッド との間にスラリーが直接供給される。 The slurry is directly supplied to the polishing pad without being hindered by the rotation of the platen or the retainer ring. Supplied.
これによつて、 被研磨材と研磨パッドとの間に十分な量のスラリーを供給する ことができる。 また、 被研磨材と研磨パッドとの間に供給されたスラリーは、 リ テ一ナリングによって周囲を囲われていて、 研磨へッドゃプラテンの回転による 遠心力を受けてもリテーナリングの外周に流出しにくいので、 スラリーを効率的 に使用することができ、 高価なスラリーの使用量を低減することができる。 ここで、 研磨ヘッドにおいて、 キャリアは、 被研磨材の研磨時に生じる加工熱 を受けて加熱されるが、 キャリアに熱変形が生じるとその変形がキャリアに保持 される被研磨材にも影響して被研磨材の研磨精度が低下してしまう。 本発明にか かる研磨へッドでは、 液体供給路を通過するスラリーによってキャリアの冷却が 行われるので、 キヤリアの熱変形を低減して被研磨材の研磨精度を向上させるこ とができる。  Thereby, a sufficient amount of slurry can be supplied between the material to be polished and the polishing pad. In addition, the slurry supplied between the workpiece and the polishing pad is surrounded by the retainer ring, so that the slurry remains on the outer periphery of the retainer ring even when subjected to centrifugal force due to the rotation of the polishing head and the platen. Since it does not easily flow out, the slurry can be used efficiently, and the amount of expensive slurry used can be reduced. Here, in the polishing head, the carrier is heated by receiving the processing heat generated during polishing of the material to be polished. When the carrier is thermally deformed, the deformation affects the material to be polished held by the carrier. Polishing accuracy of the workpiece is reduced. In the polishing head according to the present invention, since the carrier is cooled by the slurry passing through the liquid supply path, the thermal deformation of the carrier can be reduced, and the polishing accuracy of the workpiece can be improved.
さらに、 スラリーは、 次第に乾燥したり変質するなどして研磨ヘッドの隙間に 詰まりやすく、 このようなスラリ一が研磨パッド上に落ちると被研磨材の表面に スクラッチを生じさせる要因となる。 本発明にかかる研磨ヘッドでは、 研磨作業 を終えた際などの適宜時期に、 スラリー 洗浄液供給機構からの液体供給路への スラリーの供給を停止し、 代わりに液体供給路内に洗浄液を供給することで、 液 体供給路内、 及びキャリアの外周面とリテーナリングの内周面との間隙に残留し ているスラリーを洗浄液によって洗い流すことができる。 洗浄液としては、 例え ば純水や、 スラリーを構成する溶媒等を用いてもよい。  Further, the slurry is liable to be clogged in the gap between the polishing heads as it gradually dries or deteriorates, and if such a slurry falls on the polishing pad, it causes a scratch on the surface of the material to be polished. In the polishing head according to the present invention, the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped at an appropriate time such as when the polishing operation is completed, and the cleaning liquid is supplied into the liquid supply path instead. Thus, the slurry remaining in the liquid supply path and in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring can be washed away with the cleaning liquid. As the cleaning liquid, for example, pure water, a solvent constituting a slurry, or the like may be used.
また、 本発明の第三の態様は、 プラテン上に貼付された研磨パッドの表面に 、 研磨へッドにより前記研磨パッドに対して相対的に移動させつつ被研磨材を押 しっけて該被研磨材の研磨を行う研磨装置であって、 前記研磨パッドの表面に気 体及びスラリーの少なくとも一方を吹付ける吹付装置を設ける研磨装置である。 このように構成される研磨装置においては、 吹付装置によって研磨パッドの表 面に、 気体またはスラリーのうちの少なくとも一方が吹付けられる。  In a third aspect of the present invention, the polishing target is pressed against a surface of a polishing pad stuck on a platen while being moved relatively to the polishing pad by a polishing head. A polishing apparatus for polishing a material, the apparatus including a spraying apparatus for blowing at least one of a gas and a slurry onto a surface of the polishing pad. In the polishing apparatus configured as described above, at least one of gas and slurry is sprayed on the surface of the polishing pad by the spraying apparatus.
吹付装置が気体を吹付ける構成である場合は、 研磨パッド上に純水等の液体が 残っている状態で、 吹付装置によって研磨パッドの表面に気体を吹付けることで 、 気体によって研磨パッド上の前記液体が押し流されて除去される。 If the spray device is configured to blow gas, a liquid such as pure water may be applied on the polishing pad. In the remaining state, a gas is blown onto the surface of the polishing pad by a spraying device, whereby the liquid on the polishing pad is swept away by the gas and removed.
また、 吹付装置がスラリーを吹付ける構成である場合は、 吹付装置によって研 磨パッドの表面に吹付けられるスラリーによって研磨パッド上の液体が押し流さ れて、 該液体とスラリーとが置換される。  Further, when the spraying device is configured to spray the slurry, the liquid on the polishing pad is swept away by the slurry sprayed on the surface of the polishing pad by the spraying device, and the liquid is replaced with the slurry.
また、 吹付装置が気体とスラリーの両方を研磨パッドに吹付ける構成とした場 合には、 まず研磨パッドの表面に気体を吹付けて研磨パッド上の液体を除去した 後に、 研磨パッドの表面にスラリーを吹付けることで、 研磨パッド上に前記液体 によって薄められていないスラリーの層が形成される。  When the spraying device is configured to spray both gas and slurry to the polishing pad, first, gas is blown to the surface of the polishing pad to remove the liquid on the polishing pad, and then to the surface of the polishing pad. By spraying the slurry, a layer of the slurry not diluted by the liquid is formed on the polishing pad.
ここで、 吹付装置が、 気体またはスラリーを吐出するノズルと、 このノズルを 研磨パッドの表面上を移動させるノズル移動機構とを有してもよい。  Here, the spraying device may have a nozzle for discharging gas or slurry, and a nozzle moving mechanism for moving the nozzle on the surface of the polishing pad.
この場合には、 ノズルから気体またはスラリーを吐出させて研磨パッドの表面 に吹付けながら、 ノズル移動機構によってノズルを研磨パッドの表面に対して移 動させることで、 気体またはスラリーが研磨パッドの表面にまんべんなく吹付け られる。  In this case, while the gas or slurry is discharged from the nozzle and sprayed onto the surface of the polishing pad, the nozzle or moving mechanism moves the nozzle relative to the surface of the polishing pad, so that the gas or slurry is discharged from the surface of the polishing pad. Sprayed evenly.
ここで、 気体またはスラリーは、 研磨パッドの表面において少なくとも被研磨 材の研磨に使用される領域全体に吹付けることができればよい。  Here, it is sufficient that the gas or the slurry can be sprayed on at least the entire region used for polishing the workpiece on the surface of the polishing pad.
ノズル移動機構は、 例えば研磨パッドの回転中心に対向する位置から径方向外 周側に向けてノズルを移動させる構成とすることができる。  The nozzle moving mechanism can be configured to move the nozzle, for example, from a position facing the rotation center of the polishing pad toward the radially outer peripheral side.
この構成では、 プラテンを駆動して研磨パッドを回転させ、 これと並行して、 ノズルから研磨パッドに気体またはスラリーを吹付けながらノズルを研磨パッド の回転中心に対向する位置から径方向外周側に向けて移動させることで、 研磨パ ッドの回転中心から径方向外周側に向かって渦巻状に気体またはスラリーが吹付 けられて、 気体またはスラリーが研磨パッドの表面にまんべんなく吹付けられる また、 ノズルは洗浄液を供給する洗浄液供給源が接続されていてもよい。 スラリーは、 時間の経過に伴って乾燥または変質して凝固するので、 吹付装置 がノズルからスラリーを吐出する構成である場合には、 このようにノズルに洗浄 液供給源を接続し、 適宜時期に洗浄液供給源からノズルに洗浄液を供給すること で、 洗浄液によってノズル内のスラリーを洗い流して、 ノズルの詰まりを防止す ることができる。 In this configuration, the platen is driven to rotate the polishing pad, and in parallel with this, while blowing gas or slurry from the nozzle to the polishing pad, the nozzle is moved radially outward from a position facing the rotation center of the polishing pad. By moving the polishing pad toward the outer periphery in the radial direction from the rotation center of the polishing pad, the gas or slurry is sprayed in a spiral shape, and the gas or slurry is evenly sprayed on the surface of the polishing pad. May be connected to a cleaning liquid supply source for supplying a cleaning liquid. The slurry dries or deteriorates over time and solidifies, so if the spraying device is configured to discharge the slurry from the nozzle, the cleaning liquid supply source is connected to the nozzle in this way, and the Supplying the cleaning liquid from the cleaning liquid supply source to the nozzle Thus, the slurry in the nozzle is washed away by the cleaning liquid, and the nozzle can be prevented from being clogged.
また、 このノズルから洗浄液を研磨パッド上に供給することで、 研磨パッドの 洗浄を行うことができる。  Further, by supplying the cleaning liquid onto the polishing pad from the nozzle, the polishing pad can be cleaned.
また、 上記研磨装置は上述した研磨へッドと組み合わせて用いても良い。 本発明の第四の実施の態様は、 上記研磨装置を用いて行う被研磨材の研磨方法 であって、 前記吹付装置によって前記研磨パッドの表面に気体またはスラリーを 吹付けて前記研磨パッド上の液体を除去した後に、 前記研磨パッド上に前記スラ リーを供給して前記被研磨材の研磨を行うことを特徴とする被研磨材の研磨方法 である。  Further, the above-mentioned polishing apparatus may be used in combination with the above-mentioned polishing head. A fourth embodiment of the present invention is a method for polishing a material to be polished, which is performed using the polishing apparatus, wherein a gas or slurry is sprayed on a surface of the polishing pad by the spraying device, and the surface of the polishing pad is A polishing method for a material to be polished, characterized in that after the liquid is removed, the slurry is supplied onto the polishing pad to polish the material to be polished.
吹付装置が気体を吹付ける構成である場合は、 研磨パッド上に純水等の液体が 残っている状態で、 吹付装置によって研磨パッドの表面に気体を吹付けることで 、 気体によって研磨パッド上の前記液体が押し流されて除去される。  When the spraying device is configured to blow gas, the gas such as pure water is left on the polishing pad, and the gas is blown onto the surface of the polishing pad by the spraying device so that the gas blows on the polishing pad. The liquid is swept away and removed.
また、 吹付装置がスラリーを吹付ける構成である場合は、 吹付装置によって研 磨パッドの表面に吹付けられるスラリーによって研磨パッド上の液体が押し流さ れて、 該液体とスラリーとが置換される。  Further, when the spraying device is configured to spray the slurry, the liquid on the polishing pad is swept away by the slurry sprayed on the surface of the polishing pad by the spraying device, and the liquid is replaced with the slurry.
また、 吹付装置が気体とスラリーの両方を研磨パッドに吹付ける構成とした場 合には、 まず研磨パッドの表面に気体を吹付けて研磨パッド上の液体を除去した 後に、 研磨パッ ドの表面にスラリーを吹付けることで、 研磨パッド上に前記液体 によって薄められていないスラリーの層が形成される。 図面の簡単な説明  When the spraying device is configured to blow both gas and slurry onto the polishing pad, first, gas is blown onto the surface of the polishing pad to remove the liquid on the polishing pad, and then the surface of the polishing pad is removed. By spraying the slurry on the polishing pad, a layer of the slurry not diluted by the liquid is formed on the polishing pad. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明の第一の実施の形態にかかる研磨へッドの構成を示す縦断面図 である。  FIG. 1 is a longitudinal sectional view showing a configuration of a polishing head according to the first embodiment of the present invention.
図 2は、 第一の実施の形態にかかる研磨へッドの要部の概略構成を示す縦断面 図である。  FIG. 2 is a longitudinal sectional view illustrating a schematic configuration of a main part of the polishing head according to the first embodiment.
図 3 Aは、 第一の実施の形態にかかる研磨へッドの他の構成の例を示す縦断面 図である。  FIG. 3A is a longitudinal sectional view showing another example of the configuration of the polishing head according to the first embodiment.
図 3 Bは、 第一の実施の形態にかかる研磨へッドの他の構成の例を示す縦断面 図である。 FIG. 3B is a longitudinal sectional view showing another example of the configuration of the polishing head according to the first embodiment. FIG.
図 4は、 本発明の第二の実施の形態にかかる研磨へッドの構成を示す縦断面図 である。  FIG. 4 is a longitudinal sectional view showing a configuration of a polishing head according to the second embodiment of the present invention.
図 5は、 本発明の第三の実施の形態にかかる研磨へッドの構成を示す縦断面図 である。  FIG. 5 is a longitudinal sectional view showing a configuration of a polishing head according to the third embodiment of the present invention.
図 6 Aは、 本発明の第三の実施の形態にかかる研磨へッドの構成の例を示す縦 断面図である。  FIG. 6A is a longitudinal sectional view showing an example of the configuration of a polishing head according to the third embodiment of the present invention.
図 6 Bは、 本発明の第三の実施の形態にかかる研磨へッドの構成の例を示す縦 断面図である。  FIG. 6B is a longitudinal sectional view showing an example of the configuration of the polishing head according to the third embodiment of the present invention.
図 6 Cは、 本発明の第三の実施の形態にかかる研磨へッドの構成の例を示す縦 断面図である。  FIG. 6C is a longitudinal sectional view showing an example of the configuration of the polishing head according to the third embodiment of the present invention.
図 7は、 本発明の第四の実施の形態にかかる研磨へッドの構成を示す縦断面図 である。  FIG. 7 is a longitudinal sectional view showing a configuration of a polishing head according to a fourth embodiment of the present invention.
図 8は、 本発明の第五の実施の形態にかかる研磨へッドの構成を示す縦断面図 である。  FIG. 8 is a longitudinal sectional view showing a configuration of a polishing head according to a fifth embodiment of the present invention.
図 9は、 本発明の第五の実施の形態にかかる研磨へッドの先端面図である。 図 1 0は、 本発明の第五の実施の形態にかかる研磨へッドの要部を概略的に示 す一部拡大図である。  FIG. 9 is a tip view of a polishing head according to a fifth embodiment of the present invention. FIG. 10 is a partially enlarged view schematically showing a main part of a polishing head according to a fifth embodiment of the present invention.
図 1 1は、 本発明の第五の実施の形態にかかる他の研磨へッドの構成を示す縦 断面図である。  FIG. 11 is a longitudinal sectional view showing the configuration of another polishing head according to the fifth embodiment of the present invention.
図 1 2は、 本発明の一実施形態にかかる研磨装置の構成を示す斜視図である。 図 1 3は、 本発明の他の実施形態にかかる研磨装置の構成を示す縦断面図であ る。  FIG. 12 is a perspective view showing a configuration of a polishing apparatus according to one embodiment of the present invention. FIG. 13 is a longitudinal sectional view showing a configuration of a polishing apparatus according to another embodiment of the present invention.
図 1 4は、 本発明にかかる研磨装置において、 吹付装置を使用した場合と使用 しなかつた場合とのそれぞれの場合の被研磨材の研磨性能を示すグラフである。 図 1 5は、 従来の研磨装置を概略的に示す斜視図である。 発明を実施するための最良の形態  FIG. 14 is a graph showing the polishing performance of the material to be polished in the polishing apparatus according to the present invention when the spraying apparatus is used and when it is not used. FIG. 15 is a perspective view schematically showing a conventional polishing apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
第一の実施の形態 以下、 本発明の一実施形態にかかる研磨ヘッドを図面を参照して説明する。 こ こで、 図 1及び図 2は本実施形態にかかる研磨へッドの構成を示す図であって、 図 1は縦断面図、 図 2は要部の概略構成を示す縦断面図である。 本実施形態にか かる研磨へッドは、 例えば図 1 5に示す従来の研磨装置において、 研磨へッド 5 の代わりに用いられるものである。 First embodiment Hereinafter, a polishing head according to an embodiment of the present invention will be described with reference to the drawings. Here, FIGS. 1 and 2 are views showing the configuration of the polishing head according to the present embodiment, FIG. 1 is a vertical cross-sectional view, and FIG. 2 is a vertical cross-sectional view showing a schematic configuration of a main part. . The polishing head according to the present embodiment is used in place of the polishing head 5 in, for example, the conventional polishing apparatus shown in FIG.
図 1に示すように、 本実施形態にかかる研磨へッド 1 1は、 天板部 1 3及び筒 状に形成された周壁部 1 4からなるへッド本体 1 2と、 へッド本体 1 2の内部に 張られたダイヤフラム 1 5 (弾性体) とを有している。  As shown in FIG. 1, the polishing head 11 according to the present embodiment includes a head main body 12 including a top plate 13 and a peripheral wall portion 14 formed in a cylindrical shape, and a head main body. 12 and a diaphragm 15 (elastic body) stretched inside.
ダイヤフラム 1 5の下面には、 下面によってゥエーハ W (被研磨材) の一面を 保持する円盤状のキャリア 1 6と、 周壁部 1 4の内壁とキャリア 1 6の外周面 1 6 aとの間に同心状に設けられて、 研磨時には研磨パッド 4に当接しつつ内周面 1 7 aでキャリア 1 6に保持されるゥヱーハ Wの外周を係止する円環状のリテー ナリング 1 7とが固定されている。  On the lower surface of the diaphragm 15, a disc-shaped carrier 16 that holds one surface of the wafer W (a material to be polished) by the lower surface, and between the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. It is provided concentrically, and is fixed to an annular retainer ring 17 that locks the outer periphery of the wafer W held by the carrier 16 on the inner peripheral surface 17a while being in contact with the polishing pad 4 during polishing. I have.
キャリア 1 6とリテ一ナリング 1 7とは、 ダイヤフラム 1 5を介して、 互いに 対して上下方向への相対的な変位を許容して接続されている。  The carrier 16 and the retainer ring 17 are connected via a diaphragm 15 while allowing relative displacement in the vertical direction with respect to each other.
へッド本体 1 2は、 円板状の天板部 1 3と天板部 1 3の外周下方に固定された 筒状の周壁部 1 4とから構成され、 へッド本体 1 2の下端部は開口されて中空に なっている。 天板部 1 3は、 研磨装置本体に連結されるシャフト 1 9に同軸に固 定されており、 シャフト 1 9には、 後述する圧力調整機構 3 0に接続される第一 の流通孔 2 0 a及びスラリー/洗浄液供給機構 3 1に接続される第二の流通孔 2 0 bが軸線に平行にして形成されている。 また、 周壁部 1 4の下端部には全周に わたって段部 1 4 aが形成されている。  The head body 1 2 is composed of a disk-shaped top plate 13 and a cylindrical peripheral wall 14 fixed below the outer periphery of the top plate 13, and the lower end of the head body 1 2 The part is open and hollow. The top plate 13 is coaxially fixed to a shaft 19 connected to the main body of the polishing apparatus. The shaft 19 has a first flow hole 20 connected to a pressure adjusting mechanism 30 described later. a and a second flow hole 20b connected to the slurry / washing liquid supply mechanism 31 are formed parallel to the axis. At the lower end of the peripheral wall portion 14, a step portion 14a is formed over the entire circumference.
セラミック等の高剛性材料からなるキャリア 1 6はほぼ円盤状に一定の厚さで 形成されており、 ダイヤフラム 1 5の上面に設けられたキャリア固定リング 2 1 に対して、 間にダイヤフラム 1 5を挟み込んだ状態で固定されることで、 ダイヤ フラム 1 5に取り付けられている。  The carrier 16 made of a high-rigidity material such as ceramics is formed in a substantially disc-like shape with a constant thickness, and the diaphragm 15 is interposed between the carrier fixing ring 21 provided on the upper surface of the diaphragm 15. It is attached to the diaphragm 15 by being fixed in a sandwiched state.
リテ一ナリング 1 7は、 図 1に示すように略円環状に形成されており、 周壁部 1 4の内壁との間及びキャリア 1 6の外周面 1 6 aとの間に僅かな隙間を空けて 、 これらと同心状にして配置されている。 ここで、 キャリア 1 6とリテーナリン 777 The retainer ring 17 is formed in a substantially annular shape as shown in FIG. 1 and has a slight gap between the retainer ring 17 and the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. They are arranged concentrically with these. Where carrier 16 and retainer 777
14 14
グ 1 7との間に形成される隙間を符号 Kで示す (図 2参照) 。 また、 リテーナリ ング 1 7は、 ダイヤフラム 1 5の上面に設けられたリテーナリング固定リング 2 2に対して、 間にダイヤフラム 1 5を挟み込んだ状態で固定されることで、 ダイ ャフラム 1 5に取り付けられている。 The gap formed between the connector 17 and K is indicated by the symbol K (see FIG. 2). The retainer ring 17 is attached to the diaphragm 15 by being fixed to the retainer ring fixing ring 22 provided on the upper surface of the diaphragm 15 with the diaphragm 15 interposed therebetween. ing.
これらキャリア 1 6の外周縁とリテーナリング 1 7の内周縁とのうちの少なく とも一方の周縁部には、 ダイヤフラム 1 5と対向する部位に、 他方の周縁部との 間に収容空間 Cを形成する収容部 2 3が設けられている。 本実施の形態では、 キ ャリア 1 6の外周縁に切り欠きを設けて収容部 2 3を形成しており、 また収容部 At least one of the outer peripheral edge of the carrier 16 and the inner peripheral edge of the retainer ring 17 has an accommodation space C at a portion facing the diaphragm 15 and between the other peripheral edge. An accommodating portion 23 is provided. In the present embodiment, a notch is provided in the outer peripheral edge of the carrier 16 to form the accommodation portion 23, and the accommodation portion
2 3は、 キャリア 1 6の外周縁の全周にわたって設けている。 23 is provided over the entire outer peripheral edge of the carrier 16.
繊維補強ゴムなどの弾性材料からなるダイヤフラム 1 5は円環状または円板状 に形成されており、 その外周縁を、 周壁部 1 4の内壁に形成された段部 1 4 aと 段部 1 4 aに取り付けられるダイヤフラム固定リング 2 6との間に挟み込まれる ことで、 ヘッド本体 1 2に対して固定されている。  The diaphragm 15 made of an elastic material such as fiber reinforced rubber is formed in an annular or disk shape, and its outer peripheral edge is formed by a step 14 a and a step 14 formed on the inner wall of the peripheral wall 14. It is fixed to the head body 12 by being sandwiched between the diaphragm fixing ring 26 attached to a.
ダイヤフラム 1 5の上方には、 へッド本体 1 2との間に流体室 2 7が形成され ている。 流体室 2 7は、 シャフト 1 9に形成された第一の流通孔 2 0 aを通じて 圧力調整機構 3 0に接続されている。 そして、 流体室 2 7内部に、 圧力調整機構 Above the diaphragm 15, a fluid chamber 27 is formed between the diaphragm 15 and the head body 12. The fluid chamber 27 is connected to the pressure adjusting mechanism 30 through a first flow hole 20 a formed in the shaft 19. And, inside the fluid chamber 27, a pressure adjusting mechanism
3 0から第一の流通孔 2 0 aを通して、 空気をはじめとする流体が供給されるこ とによって、 流体室 2 7内の圧力が調整される。 The pressure in the fluid chamber 27 is adjusted by supplying a fluid such as air from 30 through the first circulation hole 20a.
また、 ダイヤフラム 1 5には、 キャリア 1 6の外周面とリテ一ナリング 1 7の 内周面との間に形成される隙間 K内へスラリーを供給するための供給口 2 8が設 けられている。 本実施の形態では、 供給口 2 8は、 ダイヤフラム 1 5においてキ ャリア 1 6の収容部 2 3が形成する収容空間 Cに対向する部位 (収容空間に露出 される部位) に設けられている。 これにより、 隙間 Kは極力小さくしつつ、 収容 空間 C内に必要な大きさの供給口 2 8を設けることができる。 この供給口 2 8は 、 ダイヤフラム 1 5において一箇所だけ設けてもよく、 またダイヤフラム 1 5に おいて収容空間 Cに対向する部位の周方向の複数箇所に設けてもよい。  Further, the diaphragm 15 is provided with a supply port 28 for supplying slurry into a gap K formed between the outer peripheral surface of the carrier 16 and the inner peripheral surface of the retainer ring 17. I have. In the present embodiment, the supply port 28 is provided at a portion of the diaphragm 15 that faces the storage space C formed by the storage portion 23 of the carrier 16 (a portion exposed to the storage space). Thereby, the supply port 28 of a required size can be provided in the storage space C while the gap K is made as small as possible. The supply port 28 may be provided at only one location in the diaphragm 15 or may be provided at a plurality of locations in the circumferential direction of a portion of the diaphragm 15 facing the accommodation space C.
供給口 2 8は、 ダイヤフラム 1 5において収容空間 Cに対向する部位を上下か ら挟み込むとともにその互いに対向する位置に開口部 2 8 bが設けられる一対の 支持プレート 2 8 aと、 ダイヤフラム 1 5においてこの開口部 2 8 bに対向する 02 00777 The supply port 28 is provided with a pair of support plates 28 a provided with openings 28 b at positions opposed to each other at positions facing the storage space C in the diaphragm 15 from above and below, and a diaphragm 15. Facing this opening 28b 02 00777
15  Fifteen
部位に設けられる開口部 1 5 aとによって構成されている。 And an opening 15a provided at the site.
この支持プレート 2 8 aは、 例えばリング形状に形成して、 ダイヤフラム 1 5 において収容空間 Cに対向する部位を周方向の全周に渡って挟み込む構成として もよく、 また周方向の一部のみを挟み込む構成としてもよい。  The support plate 28a may be formed, for example, in a ring shape, and a portion of the diaphragm 15 facing the accommodation space C may be sandwiched over the entire circumference in the circumferential direction, or only a part of the circumferential direction may be sandwiched. It may be configured to be sandwiched.
ここで、 支持プレート 2 8 aは、 ダイヤフラム 1 5においてキャリア 1 6に覆 われる部位とリテーナリング 1 7に覆われる部位とのうち少なくともいずれか一 方との間に隙間をあけて設けられている。 これにより、 ダイヤフラム 1 5におい てキャリア 1 6とリテーナリング 1 7との間に弾性変形可能な領域を確保して、 ダイヤフラム 1 5に取り付けられるキャリア 1 6とリテーナリング 1 7とをへッ ド本体 1 2の軸線方向に独立して変位させることを可能にしている。  Here, the support plate 28 a is provided with a gap between at least one of the portion covered by the carrier 16 and the portion covered by the retainer ring 17 in the diaphragm 15. . This secures an elastically deformable area between the carrier 16 and the retainer ring 17 in the diaphragm 15, and connects the carrier 16 and the retainer ring 17 attached to the diaphragm 15 to the head body. It is possible to displace independently in the axial direction of 12.
この供給口 2 8は、 スラリー Z洗浄液供給機構 3 1と接続されている。 本実施 の形態では、 図 1に示すように、 供給口 2 8において、 流体室 2 7側の開口端は 、 少なくとも一部が可撓性を有する第一のフレキシブル配管 2 9を介して、 へッ ド本体 1 2のシャフト 1 9に形成される第二の流通孔 2 0 bと接続されている。 ダイヤフラム 1 5は、 第一のフレキシブル配管 2 9が変形することによってへッ ド本体 1 2の軸線方向への変位を許容されている。  The supply port 28 is connected to the slurry Z cleaning liquid supply mechanism 31. In the present embodiment, as shown in FIG. 1, at the supply port 28, the open end of the fluid chamber 27 side is connected to a first flexible pipe 29 at least partially having flexibility. It is connected to a second flow hole 20 b formed in the shaft 19 of the head body 12. The diaphragm 15 is allowed to be displaced in the axial direction of the head main body 12 by deforming the first flexible pipe 29.
そして、 上記のように、 第二の流通孔 2 O bは、 スラリーと洗浄液のうちいず れか一方を選択的に供給するスラリー 洗浄液供給機構 3 1に接続されており、 これによつて供給口 2 8には、 第二の流通孔 2 0 b及び第一のフレキシブル配管 2 9を介して、 スラリ一/洗浄液供給機構 3 1からスラリーと洗浄液のうちいず れか一方が選択的に供給されるようになっている。  And, as described above, the second flow hole 2 Ob is connected to the slurry cleaning liquid supply mechanism 31 for selectively supplying either the slurry or the cleaning liquid, and the supply is thereby performed. To the port 28, either the slurry or the cleaning liquid is selectively supplied from the slurry / cleaning liquid supply mechanism 31 via the second circulation hole 20b and the first flexible pipe 29. It is supposed to be.
図 1に示すように、 スラリー 洗浄液供給機構 3 1は、 スラリー供給源 3 2と 洗浄液供給源 3 3とを有しており、 これらはそれぞれ第二の流通孔 2 0 bに対し てスラリー 洗浄液供給配管 3 4を介して接続されている。  As shown in FIG. 1, the slurry cleaning liquid supply mechanism 31 has a slurry supply source 32 and a cleaning liquid supply source 33, and these supply the slurry cleaning liquid to the second flow holes 20b, respectively. It is connected via piping 34.
スラリー供給源 3 2が供給するスラリーは、 例えば S ί 02を用いたアルカリ 性スラリーや C e 02を用いた中性スラリー、 あるいは A 1 203を用いた酸性スラ リー、 砥粒剤等を用いたスラリー等、 ゥ: E—ハ Wの研磨条件に適したものとされ る。 洗浄液供給源 3 3は、 洗浄液として、 例えば純水や、 スラリーを構成する溶 媒等を供給するものである。 本実施の形態では、 スラリー 洗浄液供給配管 3 4は、 スラリー供給源 3 2に 対しては第一のバルブ 3 6を介して接続され、 また洗浄液供給源 3 3に対しては 第二のバルブ 3 7を介して接続されており、 これら第一、 第二のバルブ 3 6、 3 7のうちのいずれか一方を開、 他方を閉とすることで、 スラリーと洗浄液のうち いずれか一方を選択的に供給されるようになっている。 ここで、 スラリー 洗浄 液供給配管 3 4へのスラリーまたは洗浄液の供給を切り換える機構としては、 上 記のように第一、 第二のバルブ 3 6、 3 7を用いた機構に限らず、 配管同士の接 続の切換に通常用いられる任意の機構を用いることができる。 Slurry slurry supply source 3 2 supplies, for example S ί 0 2 the alkaline slurry and C e 0 2 neutral slurry was used which uses or acid slurries with A 1 2 0 3,, abrasive agent E: E-C is suitable for the polishing conditions of W. The cleaning liquid supply source 33 supplies, for example, pure water, a solvent constituting a slurry, or the like as the cleaning liquid. In this embodiment, the slurry cleaning liquid supply pipe 34 is connected to the slurry supply source 32 via a first valve 36, and the slurry cleaning liquid supply source 33 is connected to a second valve 3 4. 7, one of the first and second valves 36, 37 is opened and the other is closed, so that either one of the slurry and the cleaning liquid can be selectively used. It is supplied to. Here, the mechanism for switching the supply of the slurry or the cleaning liquid to the slurry cleaning liquid supply pipe 34 is not limited to the mechanism using the first and second valves 36 and 37 as described above. Any mechanism commonly used for switching connections can be used.
以下に、 このような研磨ヘッド 1 1を用いた研磨装置によるゥエーハ Wの研磨 作業を説明する。  Hereinafter, the polishing operation of the wafer W by the polishing apparatus using the polishing head 11 will be described.
この研磨作業にあたづては、 まずゥヱーハ Wは、 例えばキャリア 1 6の下面に 設けられたゥエーハ付着シート (図示せず) に付着される。 そして、 ゥエーハ W はリテーナリング 1 7によって周囲を係止されつつ、 その表面をプラテン 3上面 に貼付された研磨パッド 4に当接させられる。 このとき、 リテーナリング 1 7の 下面も研磨パッド 4に当接される。 ここで、 初期状態では、 スラリー 洗浄液供 給機構 3 1の第一、 第二のバルブ 3 6、 3 7は共に閉じられている。  In this polishing operation, the wafer W is first attached to a wafer attachment sheet (not shown) provided on the lower surface of the carrier 16, for example. Then, while the periphery of the wafer W is locked by the retainer ring 17, the surface thereof is brought into contact with the polishing pad 4 attached to the upper surface of the platen 3. At this time, the lower surface of the retainer ring 17 is also in contact with the polishing pad 4. Here, in the initial state, both the first and second valves 36 and 37 of the slurry cleaning liquid supply mechanism 31 are closed.
次に、 圧力調整機構 3 0によって、 第一の流通孔 2 0 aから流体室 2 7に空気 などの流体を流入させることによつて流体室 2 7内の圧力を調節し、 キャリア 1 6及びリテーナリング 1 7の研磨パッド 4への押圧圧力を調節する。 キャリア 1 6及ぴリテーナリング 1 7は、 ダイヤフラム 1 5にそれぞれ支持されて上下方向 に変位可能とされたフローティング構造となっており、 流体室 2 7内部の圧力に よつて研磨パッド 4への押圧圧力が調節可能となっている。  Next, the pressure in the fluid chamber 27 is adjusted by causing a fluid such as air to flow into the fluid chamber 27 from the first circulation hole 20 a by the pressure adjusting mechanism 30, and the carrier 16 and The pressing pressure of the retainer ring 17 on the polishing pad 4 is adjusted. The carrier 16 and the retainer ring 17 have a floating structure supported by the diaphragm 15 so as to be vertically displaceable, and are pressed against the polishing pad 4 by the pressure inside the fluid chamber 27. The pressure is adjustable.
そして、 キャリア 1 6及びリテ一ナリング 1 7の研磨パッド 4への押圧 J 力を 調節しつつ、 プラテン 3を回転させるとともに、 研磨ヘッド 1 1を自転させる。 これと前後して、 スラリー 洗浄液供給機構 3 1の第一のバルブ 3 6を開き、 スラリ一供給源 3 2からスラリー 洗浄液供給配管 3 4内にスラリ一を供給する 。 これ以降は、 ゥエーハ Wの研磨中は第一のバルブ 3 6は開いたままとする。 スラリー/洗浄液供給配管 3 4に供給されたスラリーは、 ヘッド本体 1 2のシ ャフ卜 1 9に設けた第二の流通孔 2 0 b、 第一のフレキシブル配管 2 9を通じて 供給口 2 8に供給される。 Then, while adjusting the pressing J force of the carrier 16 and the retainer ring 17 against the polishing pad 4, the platen 3 is rotated and the polishing head 11 is rotated. Around this time, the first valve 36 of the slurry cleaning liquid supply mechanism 31 is opened, and the slurry is supplied from the slurry supply source 32 into the slurry cleaning liquid supply pipe 34. Thereafter, the first valve 36 is kept open during polishing of wafer W. The slurry supplied to the slurry / cleaning liquid supply pipe 34 passes through the second circulation hole 20 b provided in the shaft 19 of the head body 12 and the first flexible pipe 29. It is supplied to supply port 28.
供給口 2 8に供給されたスラリーは、 キャリア 1 6の収容部 2 3がなす収容空 間 C内に供給されて、 収容部 2 3によってキャリア 1 6の外周面 1 6 aの全周に 導かれるので、 外周面 1 6 aの全周から、 リテーナリング 1 7の内周面 1 7 aと の間に形成される隙間 K内に全周にわたつてスラリ一が供給される。  The slurry supplied to the supply port 28 is supplied into the storage space C formed by the storage portion 23 of the carrier 16, and is guided by the storage portion 23 to the entire circumference of the outer peripheral surface 16 a of the carrier 16. As a result, the slurry is supplied from the entire circumference of the outer peripheral surface 16a to the gap K formed between the inner peripheral surface 17a of the retainer ring 17 and the entire circumference.
これにより、 スラリ一が隙間 から流れ落ちてゥエーハ Wと研磨パッド 4との 間に直接供給されて、 ゥエーハ Wの研磨が行われる。 ここで、 図 2にスラリーの 流れを矢印で示す。  Thus, the slurry flows down from the gap and is directly supplied between the wafer W and the polishing pad 4, so that the wafer W is polished. Here, the flow of the slurry is shown by arrows in FIG.
そして、 研磨作業を終えた際などの適宜時期に、 スラリー 洗浄液供給機構 3 1からの供給口 2 8へのスラリーの供給を停止し、 代わりに供給口 2 8に洗浄液 を供給することで、 スラリーと同様に洗浄液を供給口 2 8内及び収容部 2 3の周 方向全周に行き渡らせて、 供給口 2 8、 収容空間 C及び隙間 K内に残留している スラリーを洗い流す。 本実施の形態では、 第一のバルブ 3 6を閉じることでスラ リ一供給源 3 2からのスラリーノ洗浄液供給配管 3 4へのスラリ一の供給を停止 し、 第二のバルブ 3 7を開くことで、 洗浄液供給源 3 3からのスラリーノ洗浄液 供給配管 3 4への洗浄液の供給を行う。  Then, at an appropriate time such as when the polishing operation is completed, the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the supply port 28 is stopped, and the slurry is supplied to the supply port 28 instead. In the same manner as described above, the cleaning liquid is spread in the supply port 28 and the entire circumferential direction of the storage section 23, and the slurry remaining in the supply port 28, the storage space C, and the gap K is washed away. In the present embodiment, the supply of the slurry from the slurry supply source 32 to the slurry cleaning solution supply pipe 34 is stopped by closing the first valve 36, and the second valve 37 is opened. The cleaning liquid is supplied from the cleaning liquid supply source 33 to the slurry cleaning liquid supply pipe 34.
このように構成される研磨へッド 1 1によれば、 キャリア 1 6の外周面 1 6 a とリテ一ナリング 1 7の内面 1 7 aとの間に形成される隙間 K内からゥヱーハ W と研磨パッド 4との間にスラリーが直接供給されるので、 プラテン 3の回転ゃリ テーナリング 1 7に妨げられることなく、 ゥエーハ Wと研磨パッド 4との間に、 十分な量のスラリーを供給することができる。  According to the polishing head 11 configured as described above, the wafer W and the wafer W from the gap K formed between the outer peripheral surface 16 a of the carrier 16 and the inner surface 17 a of the retainer ring 17. Since the slurry is directly supplied between the polishing pad 4 and the rotation of the platen 3 ゃ A sufficient amount of slurry is supplied between the wafer W and the polishing pad 4 without being hindered by the retainer ring 17. be able to.
また、 スラリーは、 キャリア 1 6の外周縁に設けられた収容部 2 3に導かれて 、 隙間 K内の全周に供給されるので、 ゥェーハ Wの外周全周から、 ゥエーハ Wと 研磨パッド 4との間にスラリーがほぼ均一に供給されることとなり、 ゥ工一ハ W の全面で研磨量をほぼ均一にすることができる。  Further, the slurry is guided to the accommodating portion 23 provided on the outer peripheral edge of the carrier 16 and supplied to the entire periphery in the gap K, so that the slurry W and the polishing pad 4 are supplied from the entire outer periphery of the wafer W. Thus, the slurry is supplied almost uniformly, so that the polishing amount can be made substantially uniform over the entire surface of W.
さらに、 ゥエーハ Wと研磨パッド 4との間に供給されたスラリーは、 リテーナ リング 1 7によって周囲を囲われるため、 研磨ヘッド 1 1やプラテン 3の回転に よる遠心力を受けてもリテーナリング 1 7の外周に流出しにくし、。 そのため、 最 小限のスラリーの使用量で効率良く研磨を行うことができ、 高価なスラリーの使 用量を著しく低減することができる。 Further, since the slurry supplied between the wafer W and the polishing pad 4 is surrounded by the retainer ring 17, the retainer ring 17 receives the centrifugal force caused by the rotation of the polishing head 11 and the platen 3. Hard to leak to the outer circumference of. As a result, polishing can be performed efficiently with the minimum amount of slurry used, and expensive slurry can be used. The dose can be significantly reduced.
また、 研磨へッド 1 1自体が回転することによリスラリーが研磨パッド 4表面 にまんべんなく供給されるので、 スラリーを効率良く研磨に寄与させることがで きる。 In addition, since the reslurry is evenly supplied to the surface of the polishing pad 4 by rotating the polishing head 11 itself, the slurry can be efficiently contributed to polishing.
そして、 このようにスラリーの利用効率を上げて使用量を著しく低減させるこ とができるので、 総量としてのスラリーの凝集粒子が減ることとなり、 ゥヱーハ Since the use efficiency of the slurry can be increased and the amount of use can be significantly reduced in this manner, the aggregated particles of the slurry as a total amount are reduced.
Wの表面に発生するマイクロスクラッチを減少させて、 ゥエーハ wの研磨性能を 向上させることができる。 また、 スラリーによる研磨パッド 4への負担も低減さ れるので、 研磨パッド 4の寿命が延び、 研磨パッド 4にかかるコストも低減する ことができる。 The micro-scratches generated on the surface of W can be reduced, and the polishing performance of wafer w can be improved. In addition, since the load on the polishing pad 4 due to the slurry is reduced, the life of the polishing pad 4 is extended, and the cost of the polishing pad 4 can be reduced.
そして、 研磨作業を終えた際などの適宜時期に、 スラリー 洗浄液供給機構 3 1からの供給口 2 8へのスラリーの供給を停止し、 代わりに供給口 2 8内に洗浄 液を供給することで、 供給口 2 8内及び隙間 K内に残留しているスラリーを、 ス ラリーが乾燥または変質、 凝固しないうちに洗浄液によって洗い流すことができ る。  Then, at an appropriate time such as when the polishing operation is completed, the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the supply port 28 is stopped, and the cleaning liquid is supplied into the supply port 28 instead. The slurry remaining in the supply port 28 and the gap K can be washed away with the washing liquid before the slurry dries, deteriorates, or solidifies.
なお、 上記実施の形態では、 収容部 2 3をキャリア 1 6の外周縁の全周にわた つて設けた例を示したが、 これに限られることなく、 外周縁において周方向の一 部のみに収容部 2 3を設けてもよい。  Note that, in the above-described embodiment, an example in which the accommodating portion 23 is provided over the entire outer peripheral edge of the carrier 16 has been described. However, the present invention is not limited thereto. An accommodation section 23 may be provided.
また、 収容部 2 3は、 図 3 Aの縦断面図に示すように、 キャリア 1 6の外周縁 に設ける代わりにリテ一ナリング 1 7の内周縁に設けてもよく、 図 3 Bの縦断面 図に示すように、 キャリア 1 6とリテーナリング 1 7の両方に設けてもよい。 後 者の場合には、 収容空間 Cをより大きくすることができるので、 ダイヤフラム 1 5において供給口 2 8を設けることのできる領域をよリ大きくすることができる また、 上記実施の形態では、 供給口 2 8に、 スラリー 洗浄液供給機構 3 1を 接続して、 スラリー供給源 3 2から供給されるスラリーと洗浄液供給源 3 3から 供給される洗浄液のいずれか一方が選択的に供給される構成を示したが、 これに 限られることなく、 供給口 2 8には、 スラリー供給源 3 2のみ接続された構成と してもよい。 また、 上記実施の形態では、 供給口 2 8を、 ダイヤフラム 1 5を挟み込む一対 の支持プレート 2 8 aと、 ダイヤフラム 1 5の開口部 1 5 aとによって構成した 例を示したが、 これに限られることなく、 例えば支持プレート 2 8 aを設けずに 、 ダイヤフラム 1 5において開口部 1 5 aの流体室 2 7側に、 第一のフレキシブ ル配管 2 9を接続する接続口、 または第一のフレキシブル配管 2 9自体を一体的 に形成した構成のダイヤフラムを用いてもよい。 第二の実施の形態 Further, as shown in the longitudinal sectional view of FIG. 3A, instead of being provided on the outer peripheral edge of the carrier 16, the housing portion 23 may be provided on the inner peripheral edge of the retainer ring 17. As shown in the figure, it may be provided on both the carrier 16 and the retainer ring 17. In the latter case, the accommodation space C can be made larger, so that the area where the supply port 28 can be provided in the diaphragm 15 can be made even larger. The slurry cleaning liquid supply mechanism 31 is connected to the port 28 so that either the slurry supplied from the slurry supply source 32 or the cleaning liquid supplied from the cleaning liquid supply source 33 is selectively supplied. Although shown, the present invention is not limited to this, and the supply port 28 may have a configuration in which only the slurry supply source 32 is connected. Further, in the above-described embodiment, an example is shown in which the supply port 28 is configured by the pair of support plates 28 a that sandwich the diaphragm 15 and the opening 15 a of the diaphragm 15. Without connecting the first flexible pipe 29 to the fluid chamber 27 side of the opening 15a in the diaphragm 15 without providing the support plate 28a, for example. A diaphragm having a configuration in which the flexible pipe 29 itself is integrally formed may be used. Second embodiment
以下、 本発明の第二の実施の形態にかかる研磨へッドを図面を参照して説明す る。 ここで、 本実施の形態にかかる研磨ヘッドにおいて、 第一の実施の形態に示 す研磨へッド 1と同一または同様の部分については同じ符号を用いて説明する。 本実施の形態にかかる研磨へッド 4 1は、 第一の実施の形態に示す研磨へッド 1において、 図 4の縦断面図に示すように、 収容部 2 3の下面に、 周面に向かう につれて次第に下方に向けて傾斜する傾斜面 2 3 aを設けたものである。  Hereinafter, a polishing head according to a second embodiment of the present invention will be described with reference to the drawings. Here, in the polishing head according to the present embodiment, the same or similar portions as the polishing head 1 shown in the first embodiment will be described using the same reference numerals. The polishing head 41 according to the present embodiment is different from the polishing head 1 according to the first embodiment in that, as shown in the longitudinal sectional view of FIG. It is provided with an inclined surface 23a which is gradually inclined downward as it goes toward.
ここで、 図 4では、 一例として、 収容部 2 3をキャリア 1 6の外周縁に設けた 場合について図示している。  Here, FIG. 4 illustrates, as an example, a case where the housing portion 23 is provided on the outer peripheral edge of the carrier 16.
この研磨へッド 4 1によれば、 供給口 2 8から収容空間 C内に供給されたスラ リーは、 図 4に矢印で示すように、 収容部 2 3の傾斜面 2 3 aに沿って速やかに 隙間 Kに向けて流れるので、 スラリーに滞留が生じにくくなつて、 スラリーの乾 燥や変質、 凝固を生じにくくすることができる。 第三の実施の形態  According to the polishing head 41, the slurry supplied from the supply port 28 into the storage space C flows along the inclined surface 23 a of the storage part 23 as shown by an arrow in FIG. Since the slurry quickly flows toward the gap K, the slurry is less likely to stay and the slurry is less likely to dry, change in quality, and to solidify. Third embodiment
以下、 本発明の第三の実施の形態にかかる研磨へッドを図面を参照して説明す る。 ここで、 本実施の形態にかかる研磨ヘッドにおいて、 第一の実施の形態に示 す研磨へッド 1と同一または同様の部分については同じ符号を用いて説明する。 本実施の形態にかかる研磨へッド 4 6は、 第一の実施の形態に示す研磨へッド 1において、 図 5の縦断面図に示すように、 収容部 2 3の下面と収容部 2 3の設 けられる周縁部の周面との間、 すなわち収容部 2 3の下面とキャリア 1 6の外周 面 1 6 aとの間には上方に屹立する壁部 4 7を設け、 壁部 4 7には、 周方向の複 蘭 77 Hereinafter, a polishing head according to a third embodiment of the present invention will be described with reference to the drawings. Here, in the polishing head according to the present embodiment, the same or similar portions as the polishing head 1 shown in the first embodiment will be described using the same reference numerals. The polishing head 46 according to the present embodiment is different from the polishing head 1 according to the first embodiment in that the lower surface of the accommodation portion 23 and the accommodation portion 2 are provided as shown in the vertical sectional view of FIG. An upwardly rising wall portion 47 is provided between the peripheral surface of the peripheral portion provided with 3, that is, between the lower surface of the housing portion 23 and the outer peripheral surface 16 a of the carrier 16. 7 has a circumferential multiple Orchid 77
20 20
数箇所に、 収容部 2 3と外周面 1 6 aとを接続する接続路 4 8を設けた構成とし たものである。 ここで、 図 5では、 一例として、 収容部 2 3をキャリア 1 6の外 周縁に設けた場合について図示している。 A connection path 48 for connecting the accommodating portion 23 and the outer peripheral surface 16a is provided at several places. Here, FIG. 5 illustrates, as an example, a case where the housing portion 23 is provided on the outer peripheral edge of the carrier 16.
この構成では、 収容空間 C内に供給されたスラリーは、 壁部 4 7によって一旦 受けられて、 収容部 2 3に沿って周方向に流れることとなる。 そして、 スラリー が壁部 4 7に設けられた接続路 4 8に達すると、 一部が接続路 4 8を通じてキヤ リア 1 6とリテーナリング 1 7との間に形成される隙間 K内に流出する。 すなわ ち、 スラリーは、 収容部 2 3及び壁部 4 7によって周方向の全周に確実に案内さ れて、 周方向の各所で接続路 4 8を通じて隙間 K内に流出するので、 スラリーを 隙間 Kの全周にわたってより均一に供給することができる。  In this configuration, the slurry supplied into the storage space C is once received by the wall portion 47 and flows in the circumferential direction along the storage portion 23. Then, when the slurry reaches the connection path 48 provided in the wall portion 47, a part of the slurry flows out into the gap K formed between the carrier 16 and the retainer ring 17 through the connection path 48. . In other words, the slurry is reliably guided along the entire circumference in the circumferential direction by the housing portion 23 and the wall portion 47 and flows out into the gap K through the connection passage 48 at various locations in the circumferential direction. It can be supplied more uniformly over the entire circumference of the gap K.
ここで、 供給口 2 8に洗浄液供給源 3 3も接続した構成とした場合、 収容空間 C内に洗浄液を供給すると、 洗浄液もスラリーと同様に周方向の全周に確実に案 内されてキャリア 1 6の周方向の各所で隙間 K内に流出して、 隙間 K内全体を洗 浄することができる。  Here, when the cleaning liquid supply source 33 is connected to the supply port 28, when the cleaning liquid is supplied into the accommodating space C, the cleaning liquid is surely envisaged along the entire circumference in the same manner as the slurry, and the carrier liquid is supplied. At each point in the circumferential direction of 16, it flows out into the gap K, and the entire inside of the gap K can be cleaned.
この研磨ヘッド 4 6においては、 接続路 4 8は、 スラリーや洗浄液を隙間 の 全周にわたってより均一に供給することができるよう、 例えばキャリア 1 6の周 方向において等間隔で設けられる。  In the polishing head 46, the connection paths 48 are provided at equal intervals in the circumferential direction of the carrier 16, for example, so that the slurry and the cleaning liquid can be supplied more uniformly over the entire circumference of the gap.
また、 接続路 4 8の形状は任意であり、 例えば図 6 Aに示すように断面視半円 形状としたり、 図 6 B及び 6 Cに示すように断面視三角形状または四角形状等、 断面視多角形状としてもよい。  The shape of the connection path 48 is arbitrary. For example, as shown in FIG. 6A, the connection path 48 has a semicircular shape in cross section, or as shown in FIGS. 6B and 6C, a triangular shape or a square shape in cross section. It may be polygonal.
さらに、 図 5に二点鎖線で示すように、 収容部 2 3の下面に、 周面に向かうに つれて次第に下方に向けて傾斜する傾斜面 2 3 aを設けてもよい。  Further, as shown by a two-dot chain line in FIG. 5, an inclined surface 23a that is gradually inclined downward toward the peripheral surface may be provided on the lower surface of the housing portion 23.
ここで、 上記実施の形態では、 キャリア 1 6の外周縁に収容部 2 3が設けられ ている場合について示したが、 これに限られることなく、 リテーナリング 1 7の 内周縁に収容部 2 3が設けられている場合にも、 同様に収容部 2 3に接続路 4 8 を有する壁部 4 7を設けることができる。 第四の実施の形態  Here, in the above embodiment, the case where the housing portion 23 is provided on the outer peripheral edge of the carrier 16 has been described. However, the present invention is not limited to this, and the housing portion 23 is provided on the inner peripheral edge of the retainer ring 17. In the same manner, the wall portion 47 having the connection path 48 can be provided in the housing portion 23. Fourth embodiment
以下、 本発明の第四の実施の形態にかかる研磨へッドを図面を参照して説明す る。 ここで、 本実施の形態にかかる研磨ヘッドにおいて、 第一の実施の形態に示 す研磨へッド 1 と同一または同様の部分については同じ符号を用いて説明する。 図 7は、 本実施形態にかかる研磨へッド 5 1の構成を示す縦断面図である。 本実施の形態にかかる研磨へッド 5 1は、 第一の実施の形態に示す研磨へッド 1において、 キャリア 1 6とリテーナリング 1 Ίとのうちの少なくとも一方に、 隙間 K内へスラリーと洗浄液とのうちの少なくとも一方を供給するための流路 5 2を設け、 この流路 5 2にも、 スラリ一供給源 3 2と洗浄液供給源 3 3とのうち 少なくとも一方を接続した構成としたものである。 Hereinafter, a polishing head according to a fourth embodiment of the present invention will be described with reference to the drawings. You. Here, in the polishing head according to the present embodiment, the same or similar parts as the polishing head 1 shown in the first embodiment will be described using the same reference numerals. FIG. 7 is a longitudinal sectional view showing the configuration of the polishing head 51 according to the present embodiment. The polishing head 51 according to the present embodiment is the same as the polishing head 1 according to the first embodiment, except that at least one of the carrier 16 and the retainer ring 1Ί And a cleaning liquid supply channel 52 for supplying at least one of the slurry and the cleaning liquid. This channel 52 is also connected to at least one of the slurry supply source 32 and the cleaning liquid supply source 33. It was done.
図 7では、 キャリア 1 6は第一の流路 (流路 A ) 5 2 aを、 またリテ一ナリン グ 1 7には第二の流路 (流路 B ) 5 2 bをそれぞれ設けた例を示している。 この研磨へッド 5 1では、 キャリア 1 6には、 上面 1 6 bから外周面 1 6 aま で通じる第一の流路 5 2 aを設け、 第一の流路 5 2 aにおいて上面 1 6 b側の開 口端とへッド本体 1 2の第二の流通孔 2 0 bとを、 少なくとも一部が弾性を有す る第二のフレキシブル配管 5 3によって接続している。  In FIG. 7, the carrier 16 is provided with a first flow path (flow path A) 52a, and the retainer 17 is provided with a second flow path (flow path B) 52b. Is shown. In this polishing head 51, the carrier 16 is provided with a first flow path 52a extending from the upper surface 16b to the outer peripheral surface 16a, and the first flow path 52a is provided with a first flow path 52a. The opening end on the 6b side is connected to the second circulation hole 20b of the head body 12 by a second flexible pipe 53 having at least a part of elasticity.
また、 ヘッド本体 1 2において、 天板部 1 3にはスラリー/洗浄液供給管 3 4 が接続されるジョイント部 5 4を設け、 天板部 1 3と周壁部 1 4には、 ジョイン 卜部 5 4から周壁部 1 4の段部 1 4 aの内周面まで通じるへッド本体管路 5 6を 設けている。 そして、 リテ一ナリング 1 7には、 上面 1 7 bから内周面 1 7 aま で通じる第二の流路 5 2 bを設けて、 第二の流路 5 2 bにおいて上面 1 7 b側の 開口端とへッド本体管路 5 6とを、 少なくとも一部が弾性を有する第三のフレキ シブル配管 5 7によつて接続する構成とする。  In the head body 12, the top plate 13 is provided with a joint portion 54 to which a slurry / cleaning liquid supply pipe 34 is connected, and the top plate 13 and the peripheral wall portion 14 are joined together. There is provided a head body conduit 56 which communicates with the inner peripheral surface of the step portion 14a of the peripheral wall portion 14. The retainer ring 17 is provided with a second flow path 52 b communicating from the upper face 17 b to the inner peripheral face 17 a, and the second flow path 52 b has an upper face 17 b side. The open end of the head body pipe 56 is connected to the head main body pipe 56 by a third flexible pipe 57 having at least a part of elasticity.
この構成では、 ダイヤフラム 1 5に設けた供給口 2 8からだけでなく、 キヤリ ァ 1 6またはリテーナリング 1 7に設けられる流路 5 2からも隙間 K内にスラリ 一や洗浄液を供給することができるので、 スラリーや洗浄液の流量を確保して研 磨性能を維持することができる。  In this configuration, the slurry and the cleaning liquid can be supplied into the gap K not only from the supply port 28 provided in the diaphragm 15 but also from the flow path 52 provided in the carrier 16 or the retainer ring 17. As a result, it is possible to maintain the polishing performance by securing the flow rates of the slurry and the cleaning liquid.
なお、 上記実施の形態において示した流路 5 2とスラリー供給源 3 2、 洗浄液 供給源 3 3との接続形態は一例であって、 他の任意の形態を採用することができ る。 第五の実施の形態 Note that the connection form of the flow path 52, the slurry supply source 32, and the cleaning liquid supply source 33 shown in the above embodiment is an example, and any other form can be adopted. Fifth embodiment
以下、 本発明の第五の実施の形態にかかる研磨へッドを図面を参照して説明す る。 ここで、 図 8は本実施形態にかかる研磨ヘッドの構成を示す縦断面図、 図 9 は本実施形態にかかる研磨へッドの先端面図、 図 1 0は本実施形態にかかる研磨 へッドの要部を概略的に示す一部拡大図である。 本実施形態にかかる研磨へッド は、 例えば図 1 5に示す従来の研磨装置において、 研磨ヘッド 5の代わりに用い られるものである。  Hereinafter, a polishing head according to a fifth embodiment of the present invention will be described with reference to the drawings. Here, FIG. 8 is a longitudinal sectional view showing a configuration of the polishing head according to the present embodiment, FIG. 9 is a front end view of the polishing head according to the present embodiment, and FIG. 10 is a polishing head according to the present embodiment. FIG. 2 is a partially enlarged view schematically showing a main part of the door. The polishing head according to the present embodiment is used in place of the polishing head 5 in, for example, the conventional polishing apparatus shown in FIG.
図 8に示すように、 本実施形態にかかる研磨へッド 6 1は、 天板部 1 3及び筒 状に形成された周壁部 1 4からなるへッド本体 1 2と、 へッド本体 1 2の内部に 張られたダイヤフラム 1 5と、 ダイヤフラム 1 5の下面に固定され、 下面によつ てゥ:!:ーハ W (被研磨材) の一面を保持する円盤状のキャリア 1 6と、 周壁部 1 4の内壁とキャリア 1 6の外周面 1 6 aとの間に同心状に設けられて、 研磨時に は研磨パッド 4に当接しつつ内周面 1 7 aでキャリア 1 6に保持されるゥェ一ハ Wの外周を係止する円環状のリ亍ーナリング 1 7とを備えている。  As shown in FIG. 8, the polishing head 61 according to the present embodiment includes a head body 12 including a top plate 13 and a peripheral wall portion 14 formed in a cylindrical shape, and a head body. Diaphragm 15 stretched inside 1 2 and disc-shaped carrier 16 fixed to the lower surface of diaphragm 15 and holding one surface of ゥ:! Is provided concentrically between the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. During polishing, the inner peripheral surface 17 a contacts the carrier 16 with the polishing pad 4 while polishing. And an annular linear ring 17 for locking the outer periphery of the wafer W to be held.
へッド本体 1 2は、 円板状の天板部 1 3と天板部 1 3の外周下方に固定された 筒状の周壁部 1 4とから構成され、 ヘッド本体 1 2の下端部は開口されて中空に なっている。 天板部 1 3は、 研磨装置本体に連結されるシャフト 1 9に同軸に固 定されており、 シャフト 1 9には、 圧力調整機構 3 0に連通された第一の流通孔 2 0 a及びスラリー Z洗浄液供給機構 3 1に連通された第二の流通孔 2 0 bが鉛 直方向に形成されている。 また、 天板部 1 3には、 スラリー Z洗浄液供給機構 3 1と連結されるためのジョイント部 5 4が設けられている。 このジョイント部 5 4からは、 天板部 1 3の下面に通じるヘッド本体管路 5 6が形成されている。 また、 周壁部 1 4の下端部には全周にわたって段部 1 4 aが形成されている。 繊維補強ゴムなどの弾性材料からなるダイヤフラム 1 5は円環状または円板状 に形成されており、 その外周縁を、 周壁部 1 4の内壁に形成された段部 1 4 aと 段部 1 4 aに取り付けられるダイヤフラム固定リング 2 6との間に挟み込まれる ことで、 ヘッド本体 1 2に対して固定されている。  The head body 12 is composed of a disk-shaped top plate 13 and a cylindrical peripheral wall 14 fixed below the outer periphery of the top plate 13, and the lower end of the head body 12 is It is open and hollow. The top plate 13 is coaxially fixed to a shaft 19 connected to the main body of the polishing apparatus, and the shaft 19 has a first flow hole 20 a and a first communication hole 20 a communicating with the pressure adjusting mechanism 30. A second flow hole 20b communicating with the slurry Z cleaning liquid supply mechanism 31 is formed in the vertical direction. Further, the top plate 13 is provided with a joint 54 for connection to the slurry Z cleaning liquid supply mechanism 31. From the joint portion 54, a head main body conduit 56 communicating with the lower surface of the top plate portion 13 is formed. Further, a step portion 14a is formed at the lower end of the peripheral wall portion 14 over the entire circumference. The diaphragm 15 made of an elastic material such as fiber reinforced rubber is formed in an annular or disk shape, and its outer peripheral edge is formed by a step 14 a and a step 14 formed on the inner wall of the peripheral wall 14. It is fixed to the head body 12 by being sandwiched between the diaphragm fixing ring 26 attached to a.
ダイヤフラム 1 5の上方には流体室 2 7が形成されており、 流体室 2 7は、 シ ャフト 1 9に形成された第一の流通孔 2 0 aによって圧力調整機構 3 0に連通さ れている。 そして、 流体室 2 7内部に、 圧力調整機構 3 0から第一の流通孔 2 0 aを通して、 空気をはじめとする流体が供給されることによって、 流体室 2 7内 部の圧力は調整される。 A fluid chamber 27 is formed above the diaphragm 15, and the fluid chamber 27 is communicated with the pressure adjusting mechanism 30 by a first flow hole 20 a formed in the shaft 19. Have been. Then, by supplying a fluid such as air into the fluid chamber 27 from the pressure adjusting mechanism 30 through the first circulation hole 20a, the pressure inside the fluid chamber 27 is adjusted. .
セラミック等の高剛性材料からなるキャリア 1 6はほぼ円盤状に一定の厚さで 形成されており、 ダイヤフラム 1 5の上面に設けられたキャリア固定リング 2 1 に対して、 間にダイヤフラム 1 5を挟み込んだ状態で固定されることで、 ダイヤ フラム 1 5に取り付けられている。  The carrier 16 made of a high-rigidity material such as ceramics is formed in a substantially disc-like shape with a constant thickness, and the diaphragm 15 is interposed between the carrier fixing ring 21 provided on the upper surface of the diaphragm 15. It is attached to the diaphragm 15 by being fixed in a sandwiched state.
そして、 キャリア 1 6には、 図 8から図 1 0に示すように、 外周面 1 6 aとリ テ一ナリング 1 7の内周面 1つ aとの間にスラリーまたは洗浄液を供給するため の流路として第一の流路 (流路 A ) 6 2が形成されている。  Then, as shown in FIGS. 8 to 10, the carrier 16 is used to supply a slurry or a cleaning liquid between the outer peripheral surface 16 a and the inner peripheral surface a of the retaining ring 17. A first flow path (flow path A) 62 is formed as a flow path.
第一の流路 6 2は、 キャリア 1 6において上面 1 6 bの中央から下面近傍まで キャリア 1 6の軸線に沿って形成される垂直部 6 2 aと、 垂直部 6 2 aの下端か らキャリア 1 6の下面に沿って、 外周側に向けて略放射状に設けられる水平部 6 2 bとを有している。 本実施の形態では、 図 9に示すように、 計 4本の水平部 6 2 bを、 キャリア 1 6の周方向に略等角度おきに形成している。  The first flow path 62 includes a vertical portion 62 a formed along the axis of the carrier 16 from the center of the upper surface 16 b to the vicinity of the lower surface of the carrier 16, and a lower portion of the vertical portion 62 a Along the lower surface of the carrier 16, there is a horizontal portion 62b provided substantially radially toward the outer peripheral side. In the present embodiment, as shown in FIG. 9, a total of four horizontal portions 62 b are formed at substantially equal angles in the circumferential direction of the carrier 16.
図 8に示すように、 第一の流路 6 2において、 上面 1 6 b側の開口端は、 少な くとも一部が可撓性を有する第一のフレキシブル配管 5 3を介して、 へッド本体 1 2のシャフト 1 9に形成される第二の流通孔 2 0 bと接続されている。 ここで 、 キャリア 1 6は、 第一のフレキシブル配管 5 3が変形することによってダイヤ フラム 1 5の変形に伴うへッド軸線方向の変位を許容されている。  As shown in FIG. 8, in the first flow path 62, the open end on the upper surface 16b side is connected through a first flexible pipe 53 having at least a part of flexibility. Connected to a second flow hole 20 b formed in the shaft 19 of the main body 12. Here, the carrier 16 is allowed to be displaced in the head axis direction due to the deformation of the diaphragm 15 due to the deformation of the first flexible pipe 53.
そして、 上記のように、 第二の流通孔 2 O bは、 スラリーと洗浄液のうちいず れか一方を選択的に供給するスラリー 洗浄液供給機構 3 1に接続されており、 これによつて第一の流路 6 2は、 第二の流通孔 2 0 b及び第一のフレキシブル配 管 5 3を介して、 スラリ一 洗浄液供給機構 3 1からスラリーと洗浄液のうちい ずれか一方を選択的に供給されるようになっている。 また、 上記第一の流路 6 2 の直径は、 2 m mよりも小さいとスラリーが詰まりやすくなリ、 1 0 m mよりも 大きくなるとキャリア 1 6の強度が低下するので、 2 m m以上 1 O m m以下とす ることが望ましい。  Then, as described above, the second circulation hole 2 Ob is connected to the slurry cleaning liquid supply mechanism 31 that selectively supplies either the slurry or the cleaning liquid, thereby forming The one flow path 62 selectively supplies either one of the slurry and the cleaning liquid from the slurry cleaning liquid supply mechanism 31 via the second circulation hole 20b and the first flexible pipe 53. It is being supplied. When the diameter of the first flow path 62 is smaller than 2 mm, the slurry is likely to be clogged, and when the diameter is larger than 10 mm, the strength of the carrier 16 is reduced. It is desirable to do the following.
また、 キャリア 1 6の外周面 1 6 aには、 第一の流路 6 2と接続されて、 第一 JP02/00777 The outer surface 16 a of the carrier 16 is connected to the first flow path 62, JP02 / 00777
24 twenty four
の流路 6 2から供給されるスラリーまたは洗浄液を導く第一の溝 (溝 A ) 6 4が 全周にわたって形成されている。 第一の溝 6 4において下側の内面 6 4 aは、 図 1 0に示すように下方に向けて窪んだ形状とされており、 これによつて第一の流 路 6 2から第一の溝 6 4に供給されたスラリーまたは洗浄液が一時保持されて、 第一の溝 6 4に沿って流れるようになつている。 ここで、 図 1 0では、 一例とし て、 第一の溝 6 4によるスラリー Sの保持の様子を示している。 A first groove (groove A) 64 for guiding the slurry or the cleaning liquid supplied from the flow path 62 of the first embodiment is formed over the entire circumference. The lower inner surface 64 a of the first groove 64 has a shape that is depressed downward as shown in FIG. 10, whereby the first inner surface 64 a is moved from the first channel 62 to the first channel 62. The slurry or the cleaning liquid supplied to the groove 64 is temporarily held, and flows along the first groove 64. Here, FIG. 10 shows a state of holding the slurry S by the first groove 64 as an example.
リテーナリング 1 7は、 図 8に示すように略円環状に形成されており、 周壁部 1 4の内壁との間及びキャリア 1 6の外周面 1 6 aとの間に僅かな隙間を空けて 、 これらと同心状にして配置されている。 ここで、 キャリア 1 6とリテーナリン グ 1 7との間に形成される隙間を符号 Kで示す (図 9、 図 1 0参照) 。 また、 リ テーナリング 1 7は、 ダイヤフラム 1 5の上面に設けられたリテーナリング固定 リング 2 2に対して、 間にダイヤフラム 1 5を挟み込んだ状態で固定されること で、 ダイヤフラム 1 5に取り付けられている。 ここで、 リテーナリング固定リン グ 2 2及びダイヤフラム 1 5には、 後述する第二の流路 (流路 B ) 6 5の開口端 に対向する位置に、 第二のフレキシブル配管 5 7 (後述) を揷通するための揷通 孔 Hが形成されている。  The retainer ring 17 is formed in a substantially annular shape as shown in FIG. 8 and has a slight gap between the retainer ring 17 and the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16. These are arranged concentrically. Here, a gap formed between the carrier 16 and the retaining ring 17 is indicated by a symbol K (see FIGS. 9 and 10). The retainer ring 17 is attached to the diaphragm 15 by being fixed to the retainer ring fixing ring 22 provided on the upper surface of the diaphragm 15 with the diaphragm 15 interposed therebetween. ing. Here, the retainer ring fixing ring 22 and the diaphragm 15 are provided with a second flexible pipe 57 (described later) at a position facing an opening end of a second flow path (flow path B) 65 described later. A through hole H is formed to allow the air to pass therethrough.
また、 リテーナリング 1 7には、 周方向の複数箇所に、 内周面 1 7 aとキヤリ ァ 1 6の外周面との間に形成される隙間 Kヘスラリーまたは洗浄液を供給するた めの流路として第二の流路 6 5が形成されている。 第二の流路 6 5は、 リテーナ リング 1 7の上面 1 7 bから内周面 1 7 aまで通じている。 本実施の形態では、 図 9に示すように、 計 4本の第二の流路 6 5をリテーナリング 1 7の周方向に略 等角度おきに形成している。 そして、 リテーナリング固定リング 2 2及びダイヤ フラム 1 5の揷通孔 Hには、 一部が可撓性を有する第二のフレキシブル配管 5 7 が揷通されており、 第二の流路 6 5において上面 1 7 b側の開口端は、 第二のフ レキシブル配管 5 7を介して、 へッド本体 1 2の天板部 1 3に形成されるへッド 本体管路 5 6と接続されている。 ここで、 リテーナリング 1 7は、 第二のフレキ シブル配管 5 7が変形することによってダイヤフラム 1 5の変形に伴うへッド軸 線方向の変位を許容されている。  In addition, the retainer ring 17 has a plurality of circumferentially arranged gaps K formed between the inner peripheral surface 17a and the outer peripheral surface of the carrier 16 and a flow path for supplying the slurry or the cleaning liquid. As a second flow path 65 is formed. The second flow path 65 communicates from the upper surface 17b of the retainer ring 17 to the inner peripheral surface 17a. In the present embodiment, as shown in FIG. 9, a total of four second flow paths 65 are formed at substantially equal angles in the circumferential direction of the retainer ring 17. A second flexible pipe 57 having a part of flexibility is passed through the through hole H of the retainer ring fixing ring 22 and the diaphragm 15. The open end on the upper surface 17 b side is connected to a head body conduit 56 formed on the top plate 13 of the head body 12 via a second flexible pipe 57. ing. Here, the retainer ring 17 is allowed to be displaced in the head axis direction due to the deformation of the diaphragm 15 due to the deformation of the second flexible pipe 57.
そして、 第二のフレキシブル配管 5 7は、 他端をヘッド本体 1 2の天板部 1 3 „ハ The other end of the second flexible piping 57 has a top plate portion 13 of the head body 12. „C
PCT/JP02/00777 PCT / JP02 / 00777
25 twenty five
に形成されるへッド本体管路 5 6を介してスラリー Z洗浄液供給機構 3 1に接続 されており、 これによつて第二の流路 6 5は、 ヘッド本体管路 5 6及び第二のフ レキシブル配管 5 7を介して、 スラリ一/洗浄液供給機構 3 1からスラリーと洗 浄液のうちいずれか一方を選択的に供給されるようになつている。 Is connected to the slurry Z cleaning liquid supply mechanism 31 through a head main body conduit 56 formed in the main body, whereby the second flow path 65 is connected to the head main body conduit 56 and the second main body conduit 56. The slurry / cleaning liquid supply mechanism 31 selectively supplies either one of the slurry and the cleaning liquid via the flexible pipe 57.
また、 上記第二の流路 6 5の直径は、 2 m mよりも小さいとスラリーが詰まり やすくなリ、 1 O m mよりも大きくなるとリテーナリングの強度が低下するので 、 2 m m以上 1 O m m以下とすることが望ましい。  If the diameter of the second flow path 65 is smaller than 2 mm, the slurry is likely to be clogged.If the diameter is larger than 1 O mm, the strength of the retainer ring is reduced. It is desirable that
また、 リテ一ナリング 1 7の内周面 1 7 aには、 第二の流路 6 5と接続されて 、 第二の流路 6 5から供給されるスラリーまたは洗浄液を導く第二の溝 (溝 B ) 6 8が全周にわたって形成されている。 図 1 0に示すように、 第二の溝 6 8にお いて下側の内面 6 8 aは下方に向けて窪んだ形状とされており、 これによつて第 二の流路 6 5から第二の溝 6 8に供給されたスラリーまたは洗浄液が一時保持さ れて、 第二の溝 6 8に沿って流れるようになつている。  Also, an inner peripheral surface 17a of the retainer ring 17 is connected to the second flow path 65, and the second groove (5) for guiding the slurry or cleaning liquid supplied from the second flow path 65. Grooves B) 68 are formed over the entire circumference. As shown in FIG. 10, the lower inner surface 68 a of the second groove 68 has a shape that is recessed downward, whereby the second flow path 65 is moved from the second flow path 65 to the second flow path 65. The slurry or the cleaning liquid supplied to the second groove 68 is temporarily held, and flows along the second groove 68.
図 8に示すように、 スラリー Z洗浄液供給機構 3 1は、 スラリー供給源 3 2と 洗浄液供給源 3 3とを有しており、 これらはそれぞれ第二の流通孔 2 0 b、 ジョ イント部 5 4に対してスラリー 洗浄液供給配管 3 4を介して接続されている。 スラリー供給源 3 2が供給するスラリーは、 例えば S i 0 2を用いたアルカリ 性スラリーや C e 0 2を用いた中性スラリー、 あるいは A I 2 0 3を用いた酸性ス ラリー、 砥粒剤等を用いたスラリー等、 ゥエーハ Wの研磨条件に適したものとさ れる。 洗浄液供給配管 3 4は、 洗浄液として、 例えば純水や、 スラリーを構成す る溶媒等を供給するものである。 As shown in FIG. 8, the slurry Z cleaning liquid supply mechanism 31 has a slurry supply source 32 and a cleaning liquid supply source 33, which are respectively provided with a second circulation hole 20b and a joint section 5b. 4 is connected via a slurry cleaning liquid supply pipe 3 4. Slurry slurry supply source 3 2 supplies, for example S i 0 2 alkaline slurry and C e 0 2 neutral slurry with using or acidic slurries using AI 2 0 3,, abrasive granules, etc. It is considered to be suitable for the polishing conditions of e-W, such as slurry using The cleaning liquid supply pipe 34 supplies, for example, pure water, a solvent constituting the slurry, or the like as the cleaning liquid.
本実施の形態では、 スラリー 洗浄液供給配管 3 4は、 スラリー供給源 3 2に 対しては第一のバルブ 3 6を介して接続され、 また洗浄液供給源 3 3に対しては 第二のバルブ 3 7を介して接続されており、 これら第一、 第二のバルブ 3 6、 3 7のうちのいずれか一方を開、 他方を閉とすることで、 スラリーと洗浄液のうち いずれか一方を選択的に供給されるようになっている。 ここで、 スラリー 洗浄 液供給配管 3 4へのスラリーまたは洗浄液の供給を切り換える機構としては、 上 記のように第一、 第二のバルブ 3 6、 3 7を用いた機構に限らず、 配管同士の接 続の切換に通常用いられる任意の機構を用いることができる。 このような研磨へッド 6 1を用いた研磨装置によってゥエーハ Wの研磨を行う 場合、 まずゥ: c—ハ Wは、 例えばキャリア 1 6の下面に設けられたゥエーハ付着 シート (図示せず) に付着される。 そして、 ゥエーハ Wはリテーナリング 1 7に よって周囲を係止されつつ、 その表面をプラテン 3上面に貼付された研磨パッド 4に当接させられる。 このとき、 リ亍ーナリング 1 7の下面も研磨パッド 4に当 接される。 ここで、 初期状態では、 スラリーノ洗浄液供給機構 3 1の第一、 第二 のバルブ 3 6、 3 7は共に閉じられている。 In this embodiment, the slurry cleaning liquid supply pipe 34 is connected to the slurry supply source 32 via a first valve 36, and the slurry cleaning liquid supply source 33 is connected to a second valve 3 4. 7, one of the first and second valves 36, 37 is opened and the other is closed, so that either one of the slurry and the cleaning liquid can be selectively used. It is supplied to. Here, the mechanism for switching the supply of the slurry or the cleaning liquid to the slurry cleaning liquid supply pipe 34 is not limited to the mechanism using the first and second valves 36 and 37 as described above. Any mechanism commonly used for switching connections can be used. In the case of polishing the wafer W by a polishing apparatus using such a polishing head 61, first, c-wa W is, for example, a wafer-adhering sheet (not shown) provided on the lower surface of the carrier 16. Adhered to. Then, while the periphery of the wafer W is locked by the retainer ring 17, the surface thereof is brought into contact with the polishing pad 4 attached to the upper surface of the platen 3. At this time, the lower surface of the relining ring 17 is also in contact with the polishing pad 4. Here, in the initial state, the first and second valves 36 and 37 of the slurry cleaning liquid supply mechanism 31 are both closed.
次に、 第一の流通孔 2 0 aから流体室 2 7に空気などの流体を流入させること によって流体室 2 7内の圧力を調節し、 キャリア 1 6及びリテーナリング 1 7の 研磨パッド 4への押圧圧力を調節する。 キャリア 1 6及びリテーナリング 1 7は 、 ダイヤフラム 1 5にそれぞれ支持されて上下方向に変位可能とされたフローテ ィング構造となっておリ、 流体室 2 7内部の圧力によつて研磨パッド 4への押圧 圧力が調節可能となっている。  Next, the pressure in the fluid chamber 27 is adjusted by flowing a fluid such as air from the first flow hole 20 a into the fluid chamber 27, and the pressure is adjusted to the carrier 16 and the polishing pad 4 of the retainer ring 17. Adjust the pressing pressure of. The carrier 16 and the retainer ring 17 have a floating structure that is supported by the diaphragm 15 and can be displaced in the vertical direction. The carrier 16 and the retainer ring 17 are applied to the polishing pad 4 by the pressure inside the fluid chamber 27. Pressing pressure can be adjusted.
そして、 キャリア 1 6及びリテーナリング 1 7の研磨パッド 4への押圧圧力を 調節しつつ、 プラテン 3を回転させるとともに、 研磨ヘッド 6 1を自転させる。 これと同時に、 スラリー Z洗浄液供給機構 3 1の第一のバルブ 3 6を開き、 ス ラリ一供給源 3 2からスラリー 洗浄液供給配管 3 4内にスラリ一を供給する。 これ以降は、 ゥエーハ Wの研磨中は第一のバルブ 3 6は開いたままとする。 スラリー Z洗浄液供給配管 3 4に供給されたスラリーは、 ヘッド本体 1 2のシ ャフト 1 9に設けた第二の流通孔 2 0 b内に供給され、 またへッド本体 1 2の天 板部 1 3に設けたジョイント部 5 4を通じてへッド本体管路 5 6内にも供給され る。  Then, while adjusting the pressing pressure of the carrier 16 and the retainer ring 17 against the polishing pad 4, the platen 3 is rotated, and the polishing head 61 is rotated. At the same time, the first valve 36 of the slurry Z cleaning liquid supply mechanism 31 is opened, and the slurry is supplied from the slurry supply source 32 into the slurry cleaning liquid supply pipe 34. Thereafter, the first valve 36 is kept open during polishing of wafer W. Slurry Z The slurry supplied to the cleaning liquid supply pipe 34 is supplied to the second circulation hole 20b provided in the shaft 19 of the head body 12 and the top plate of the head body 12 It is also supplied into the head body conduit 56 through the joint 54 provided in 13.
そして、 第二の流通孔 2 0 b内に供給されたスラリーは、 第一のフレキシブル 配管 5 3を通じて、 キャリア 1 6の第一の流路 6 2内に供給される。 第一の流路 6 2によって外周面 1 6 aまで導かれたスラリーは、 外周面 1 6 aに形成された 第一の溝 6 4によって外周面 1 6 aの全周に導かれ、 外周面 1 6 aの全周から流 れ落ちるので、 外周面 1 6 aとリテーナリング 1 7の内周面 1つ aとの間に形成 される隙間 K内、 すなわちゥエーハ Wの外周に位置する隙間の全周にスラリーが 供給される。 また、 このようにスラリーが第一の流路 6 2内に供給されることで、 第一の流 路 6 2内を流れるスラリーによってキャリア 1 6の冷却が行われる。 本実施の形 態では、 第一の流路 6 2の水平部 6 2 bをキャリア 1 6の下面に近付けて形成し 、 かつキャリア 1 6の中央から外周側に向けて略放射状に形成したので、 キヤリ ァ 1 6において加工熱を受ける下面近傍全体にわたってスラリーによる冷却が行 われる。 ここで、 キャリア 1 6の効果的な冷却を考慮した場合、 水平部 6 2 bは 、 キャリア 1 6の強度を落とさない範囲内で極力多く設けるとともに、 下面側に 近付けて設けることが好ましい。 Then, the slurry supplied to the second flow hole 20 b is supplied to the first flow path 62 of the carrier 16 through the first flexible pipe 53. The slurry guided to the outer peripheral surface 16 a by the first flow path 62 is guided to the entire periphery of the outer peripheral surface 16 a by the first groove 64 formed in the outer peripheral surface 16 a, Since it flows down from the entire circumference of 16a, the gap K formed between the outer circumference 16a and the inner circumference 1a of the retainer ring 17 Slurry is supplied all around. In addition, by supplying the slurry into the first flow path 62 in this way, the carrier 16 is cooled by the slurry flowing in the first flow path 62. In the present embodiment, the horizontal portion 62b of the first flow path 62 is formed close to the lower surface of the carrier 16 and is formed substantially radially from the center of the carrier 16 to the outer periphery. In the carrier 16, the slurry is cooled over the entire vicinity of the lower surface receiving the processing heat. Here, in consideration of effective cooling of the carrier 16, it is preferable that the horizontal portion 62 b be provided as much as possible within a range that does not reduce the strength of the carrier 16, and be provided close to the lower surface side.
さらに、 研磨へッド 6 1の回転に伴って生じる遠心力によって水平部 6 2 b内 に供給されたスラリーが外周面 1 6 aに向けて送り出されるので、 外周面 1 6 a へのスラリーの供給がスムーズに行われる。  Furthermore, the centrifugal force generated by the rotation of the polishing head 61 causes the slurry supplied into the horizontal portion 62b to be sent out toward the outer peripheral surface 16a. Supply is performed smoothly.
—方、 ヘッド本体管路 5 6内に供給されたスラリーは、 第二のフレキシブル配 管 5 7を通じて、 リテーナリング 1 7の第二の流路 6 5内に供給される。 第二の 流路 6 5によって内周面 1 7 aまで導かれたスラリーは、 内周面 1 7 aに形成さ れた第二の溝 6 8によって内周面 1 7 aの全周に導かれ、 内周面 1 7 aの全周か ら流れ落ちるので、 内周面 1 7 aとキャリア 1 6の外周面 1 6 aとの間に形成さ れる隙間 K内の全周にスラリーが供給される。 このようにスラリーが隙間 K内に 供給されることで、 プラテン 3の回転ゃリ亍ーナリング 1 7に妨げられることな く、 ゥエーハ Wと研磨パッド 4との間にスラリーが直接供給される。  On the other hand, the slurry supplied to the head main body conduit 56 is supplied to the second flow passage 65 of the retainer ring 17 through the second flexible piping 57. The slurry guided to the inner peripheral surface 17a by the second flow path 65 is guided to the entire periphery of the inner peripheral surface 17a by the second groove 68 formed in the inner peripheral surface 17a. Then, the slurry flows down from the entire circumference of the inner peripheral surface 17a, so that the slurry is supplied to the entire circumference in the gap K formed between the inner peripheral surface 17a and the outer peripheral surface 16a of the carrier 16. You. By supplying the slurry into the gap K in this manner, the slurry is directly supplied between the wafer W and the polishing pad 4 without being hindered by the rotating and re-ringing 17 of the platen 3.
そして、 研磨作業を終えた際などの適宜時期に、 スラリー/洗浄液供給機構 3 1からの第一、 第二の流路 6 2、 6 5へのスラリーの供給を停止し、 代わりに第 一、 第二の流路 6 2、 6 5内に洗浄液を供給することで、 スラリーと同様に洗浄 液を第一、 第二の流路 6 2、 6 5内及び隙間 Kの周方向全周に行き渡らせて、 第 一、 第二の流路 6 2、 6 5内及び隙間 K内に残留しているスラリーを洗い流すこ とができる。 本実施の形態では、 第一のバルブ 3 6を閉じることでスラリー供給 源 3 2からのスラリー/洗浄液供給配管 3 4へのスラリーの供給を停止し、 第二 のバルブ 3 7を開くことで、 洗浄液供給源 3 3からのスラリー 洗浄液供給配管 3 4への洗浄液の供給を行う。  Then, at an appropriate time such as when the polishing operation is completed, the supply of the slurry from the slurry / cleaning liquid supply mechanism 31 to the first and second flow paths 62, 65 is stopped, and instead, the first, By supplying the cleaning liquid into the second flow paths 62, 65, the cleaning liquid spreads throughout the first and second flow paths 62, 65 and the entire circumferential direction of the gap K in the same manner as the slurry. As a result, the slurry remaining in the first and second flow paths 62 and 65 and the gap K can be washed away. In the present embodiment, by closing the first valve 36, the supply of the slurry from the slurry supply source 32 to the slurry / cleaning liquid supply pipe 34 is stopped, and by opening the second valve 37, Slurry from cleaning liquid supply source 3 3 Supply cleaning liquid to cleaning liquid supply pipe 34.
このように構成される研磨ヘッド 6 1によれば、 スラリーがキャリア 1 6の外 周面 1 6 aとリテーナリング 1 7の内面 1 7 aとの間に形成される隙間 K内に供 給されることで、 プラテン 3の回転ゃリテーナリング 1 7に妨げられることなく 、 ゥェ一ハ Wと研磨パッド 4との間にスラリーが直接供給される。 According to the polishing head 61 configured as described above, the slurry is formed outside the carrier 16. By being supplied into the gap K formed between the peripheral surface 16 a and the inner surface 17 a of the retainer ring 17, the rotation of the platen 3 and the retainer ring 17 do not hinder the rotation. The slurry is directly supplied between the pad W and the polishing pad 4.
これによつて、 ゥエーハ Wと研磨パッド 4との間に十分な量のスラリーを供給 することができる。  Thereby, a sufficient amount of slurry can be supplied between the wafer W and the polishing pad 4.
また、 スラリーは、 キャリア 1 6の外周面 1 6 aに形成された第一の溝 6 4及 びリテ一ナリング 1 7の内周面 1 7 aに形成された第二の溝 6 8に導かれて、 隙 間 K内の全周に供給されるので、 ゥエーハ Wの外周全周から、 ゥエーハ Wと研磨 パッド 4との間にスラリーがほぼ均一に供給されることとなり、 ゥエーハ Wの全 面で研磨量をほぼ均一にすることができる。  The slurry is introduced into the first groove 64 formed on the outer peripheral surface 16 a of the carrier 16 and the second groove 68 formed on the inner peripheral surface 17 a of the retainer ring 17. And the slurry is supplied to the entire circumference in the gap K, so that the slurry is almost uniformly supplied between the wafer W and the polishing pad 4 from the entire circumference of the wafer W, and the entire surface of the wafer W The polishing amount can be made substantially uniform.
さらに、 ゥエーハ Wと研磨パッド 4との間に供給されたスラリーは、 リテーナ リング 1 7によって周囲を囲われるため、 研磨ヘッド 6 1やプラテン 3の回転に よる遠心力を受けてもリテーナリング 1 7の外周に流出しにくい。 そのため、 最 小限のスラリーの使用量で効率良く研磨を行うことができ、 高価なスラリーの使 用量を低減することができる。  Furthermore, since the slurry supplied between the wafer W and the polishing pad 4 is surrounded by the retainer ring 17, the retainer ring 17 is not affected by the centrifugal force generated by the rotation of the polishing head 61 and the platen 3. Hard to flow to the outer periphery of Therefore, polishing can be performed efficiently with the minimum amount of slurry used, and the amount of expensive slurry used can be reduced.
そして、 研磨へッド 6 1自体が回転することによリスラリーはまんべんなく研 磨パッド 4表面に供給されるので、 スラリーを効率良く研磨に寄与させることが できる。  The reslurry is evenly supplied to the surface of the polishing pad 4 by the rotation of the polishing head 61 itself, so that the slurry can efficiently contribute to polishing.
また、 スラリーが第一の流路 6 2内に供給されることで、 第一の流路 6 2内を 流れるスラリーによってキャリア 1 6の冷却が行われるので、 キャリア 1 6の熱 変形を低減して、 ゥェーハ Wの研磨精度を向上させることができる。  Further, since the slurry is supplied into the first flow path 62, the carrier 16 is cooled by the slurry flowing in the first flow path 62, so that the thermal deformation of the carrier 16 is reduced. Thus, the polishing accuracy of wafer W can be improved.
そして、 第一の流路 6 2の水平部 6 2 bをキャリア 1 6の中央から外周側に向 けて略放射状に形成したので、 キャリア 1 6において加工熱を受ける下面近傍全 体にわたってスラリーによる冷却を行うことができ、 キャリア 1 6の熱変形をよ リ効果的に押さえることができる。 さらに、 ゥエーハ Wの研磨時には、 研磨へッ ド 6 1の回転に伴って生じる遠心力によってキャリア 1 6の外周面 1 6 aへのス ラリーの供給をスムーズに行うことができる。  Since the horizontal portion 62b of the first flow path 62 is formed substantially radially from the center of the carrier 16 toward the outer periphery, the slurry is applied to the entire vicinity of the lower surface of the carrier 16 receiving the processing heat. Cooling can be performed, and the thermal deformation of the carrier 16 can be suppressed more effectively. Further, when polishing the wafer W, the slurry can be smoothly supplied to the outer peripheral surface 16a of the carrier 16 by the centrifugal force generated by the rotation of the polishing head 61.
そして、 研磨作業を終えた際などの適宜時期に、 スラリー 洗浄液供給機構 3 1からの第一、 第二の流路 6 2、 6 5へのスラリーの供給を停止し、 代わりに第 一、 第二の流路 6 2、 6 5内に洗浄液を供給することで、 第一、 第二の流路 6 2 、 6 5内及び隙間 K内に残留しているスラリーを、 スラリーが乾燥または変質し ないうちに洗浄液によって洗い流すことができる。 Then, at an appropriate time such as when the polishing operation is completed, the supply of the slurry from the slurry cleaning liquid supply mechanism 31 to the first and second flow paths 62, 65 is stopped. The slurry remaining in the first and second flow paths 62, 65 and the gap K is dried by supplying the cleaning liquid into the first and second flow paths 62, 65. Alternatively, it can be washed away with a cleaning solution before deterioration.
なお、 上記実施の形態では、 ヘッド本体 1 2において、 天板部 1 3に設けられ るジョイント部 5 4とリテーナリング 1 7の第二の流路 6 5とを接続する構造と して、 天板部 1 3に流体室 2 7内に通じるヘッド本体管路 5 6を形成し、 このへ ッド本体管路 5 6と第二の流路 6 5とを、 流体室 2 7内に配置した第二のフレキ シブル配管 5 7によって接続した例を示した。 しかし、 これに限られることなく 、 例えば図 1 1に示す研磨へッド 7 1のように、 へッド本体 1 2にへッド本体管 路 5 6を設ける代わりに、 天板部 1 3のジョイント部 5 4から周壁部 1 4の段部 1 4 aの内周面に通じるヘッド本体管路 7 2を形成し、 また第二の流路 6 5にお いて、 リテーナリング 1 7の上面 1 7 bに開口されていた端部を外周面 1 7 cに 開口させ、 この開口端とヘッド本体管路 7 2の段部 1 4 a側の開口端とを第二の フレキシブル配管 5 7によつて接続した構成としてもよい。 第六の実施の形態  In the above embodiment, the head body 12 has a structure in which the joint part 54 provided on the top plate part 13 and the second flow path 65 of the retainer ring 17 are connected. A head main body conduit 56 communicating with the fluid chamber 27 was formed in the plate portion 13, and the head main body conduit 56 and the second flow path 65 were arranged in the fluid chamber 27. An example of connection by the second flexible piping 57 was shown. However, the present invention is not limited to this. For example, instead of providing a head body conduit 56 in the head body 12 as in a polishing head 71 shown in FIG. A head main body conduit 72 is formed from the joint portion 54 to the inner peripheral surface of the step portion 14a of the peripheral wall portion 14, and the upper surface of the retainer ring 17 is formed in the second flow path 65. Open the end that had been opened to 17 b to the outer peripheral surface 17 c, and connect this open end and the open end of the step 14 a side of the head body conduit 72 to the second flexible pipe 57. Connection may be used. Sixth embodiment
以下、 本発明の第六の実施の形態にかかる研磨装置を図面を参照して説明する 。 ここで、 図 1 2は本実施形態にかかる研磨装置の構成を示す斜視図である。 本実施形態にかかる研磨装置において、 図 1 5に示す従来の研磨装置と同一ま たは同様の部分については同一の符号を用いて説明する。  Hereinafter, a polishing apparatus according to a sixth embodiment of the present invention will be described with reference to the drawings. Here, FIG. 12 is a perspective view showing the configuration of the polishing apparatus according to the present embodiment. In the polishing apparatus according to the present embodiment, the same or similar parts as those of the conventional polishing apparatus shown in FIG. 15 will be described using the same reference numerals.
図 1 2に示すように、 本実施形態にかかる研磨装置 1 1 1は、 中心軸に取り付 けられたプラテン 3上に研磨パッド 4が設けられ、 この研磨パッド 4に対向して かつプラテン 3の中心軸から偏心した位置に、 図示せぬへッド駆動機構によって 回転駆動される研磨ヘッドが配設され、 さらに、 研磨パッド 4の表面に気体また はスラリーを吹付ける吹付装置 1 1 2が設けられた構成とされている。  As shown in FIG. 12, a polishing apparatus 111 according to the present embodiment has a polishing pad 4 provided on a platen 3 attached to a center shaft. A polishing head rotated by a head driving mechanism (not shown) is disposed at a position eccentric from the center axis of the polishing pad, and a spraying device 112 for blowing gas or slurry onto the surface of the polishing pad 4 is provided. The configuration is provided.
吹付装置 1 1 2は、 気体またはスラリーを吐出するノズル 1 1 3と、 このノズ ル 1 1 3を研磨パッド 4に向けた状態で研磨パッド 4の表面に対して移動させる ノズル移動機構 1 1 4とを有している。 これらノズル 1 1 3及びノズル移動機構 1 1 4は複数組設けてもよい。 ノズル 1 1 3には、 気体供給源 1 1 6が第一の配管 1 1 7を通じて接続されて いる。 The spraying device 1 1 2 includes a nozzle 1 13 for discharging gas or slurry, and a nozzle moving mechanism 1 1 4 for moving the nozzle 1 13 toward the surface of the polishing pad 4 while facing the polishing pad 4. And A plurality of sets of the nozzles 113 and the nozzle moving mechanism 114 may be provided. A gas supply source 116 is connected to the nozzle 113 through a first pipe 117.
気体供給源 1 1 6は、 例えば清浄な乾燥空気や不活性ガス等、 研磨パッド 4を 汚染または変質させることのない気体を供給するものである。  The gas supply source 116 supplies a gas that does not contaminate or deteriorate the polishing pad 4, such as clean dry air or an inert gas.
第一の配管 1 1 7には第一のバルブ 1 1 8が設けられており、 第一のバルブ 1 1 8を開閉することで、 ノズル 1 1 3への気体の供給及び供給の停止を制御する ことができるようになつている。 この第一のバルブ 1 1 8は、 手動で開閉される 構成とするほか、 図示せぬ制御装置によって開閉を制御される構成とすることが できる。  The first pipe 1 17 is provided with a first valve 1 18 that controls the supply of gas to the nozzle 1 13 and the stop of supply by opening and closing the first valve 1 18 You can do it. The first valve 118 may be configured to be opened and closed manually, or may be configured to be opened and closed by a control device (not shown).
ノズル移動機構 1 1 4は、 ノズル 1 1 3を研磨パッド 4の表面において少なく とも被研磨材の研磨に使用される領域上で移動させるものであって、 部材の移動 に一般的に用いられる任意の構成を採用することができる。  The nozzle moving mechanism 114 moves the nozzle 113 on the surface of the polishing pad 4 at least over an area used for polishing the workpiece, and is an optional nozzle generally used for moving members. Can be adopted.
本実施の形態では、 ノズル移動機構 1 1 4は、 プラテン 3の側方に設けられた 支持軸 1 2 1 と、 この支持軸 1 2 1に一端 1 2 2 aを支持されるアーム 1 2 2と 、 支持軸 1 2 1を軸線周りに回転させる図示せぬ駆動装置とを有している。 アーム 1 2 2の他端 1 2 2 bにはノズル 1 1 3が設けられており、 駆動装置に よって回転軸 1 2 1が回転されることで、 支持軸 1 2 1を支点として研磨パッド 4の表面に沿った平面上で旋回させられて、 他端 1 2 2 bに設けられたノズル 1 1 3が研磨パッド 4の表面に沿った平面上で移動させられるようになつている。 ここで、 アーム 1 2 2は、 他端 1 2 2 bを、 研磨パッド 4の回転中心 Cに対向 する位置から、 研磨パッド 4の径方向外周側に向けて、 少なくとも被研磨材の研 磨に使用される領域の径方向最外周位置に対向する位置まで移動可能とされてい る。  In the present embodiment, the nozzle moving mechanism 114 includes a support shaft 121 provided on the side of the platen 3 and an arm 122 supporting one end 122 a on the support shaft 121. And a drive device (not shown) for rotating the support shaft 122 around the axis. The other end 1 2 2b of the arm 1 2 2 is provided with a nozzle 1 13, and the rotating shaft 1 2 1 is rotated by the driving device, so that the polishing pad 4 is supported on the support shaft 1 2 1 as a fulcrum. The nozzle 1 13 provided on the other end 1 2 2 b is swung on a plane along the surface of the polishing pad 4 so as to be moved on a plane along the surface of the polishing pad 4. Here, the arm 1 2 2 moves the other end 1 2 2 b from the position facing the rotation center C of the polishing pad 4 toward the radially outer peripheral side of the polishing pad 4 to at least polish the material to be polished. It can be moved to a position opposite to the radially outermost position of the used area.
以下に、 このように構成される研磨装置 1 1 1による被研磨材の研磨工程につ いて説明する。 この研磨装置 1 1 1は、 研磨パッド 4のドレッシングを行った後 の初回の研磨工程、 または前回の研磨工程の後に行われる研磨工程に特徴を有し ている。 本実施の形態では、 ドレッシング及びリンス研磨の際に研磨パッド 4上 に供給する液体として純水 P Wを使用している。  Hereinafter, a polishing process of a material to be polished by the polishing apparatus 111 configured as described above will be described. The polishing apparatus 111 has a feature in an initial polishing step after dressing the polishing pad 4 or in a polishing step performed after the previous polishing step. In the present embodiment, pure water PW is used as a liquid to be supplied onto polishing pad 4 during dressing and rinsing.
この研磨工程において、 初期状態では、 ノズル 1 1 3は研磨パッド 4の回転中 心 Cに対向する位置に位置させられている。 In the polishing process, in the initial state, the nozzles 1 13 are rotating while the polishing pad 4 is rotating. It is located at a position facing the heart C.
そして、 この状態でノズル 1 1 3から気体を研磨パッド 4の表面に吹付けるこ とで、 研磨パッド 4の回転中心 Cでは、 吹付けられた気体によって純水 P Wが周 囲に押し流される。  By blowing gas from the nozzles 11 to the surface of the polishing pad 4 in this state, the pure water PW is swept around the rotation center C of the polishing pad 4 by the blown gas.
これと前後してプラテン 3を駆動して研磨パッド 4を回転させる。  Before or after this, the platen 3 is driven to rotate the polishing pad 4.
このように研磨パッド 4を回転させた状態で、 ノズル移動機構 1 1 4によって ノズル 1 1 3を研磨パッド 4の径方向外周側に向けて移動させることで、 研磨パ ッド 4の回転中心 Cから径方向外周側に向けて渦巻状にくまなく気体が吹付けら れて、 研磨パッド 4の回転中心 Cから径方向外周側に向けて純水 P Wがもれなく 押し流されることとなる。  By moving the nozzle 113 toward the radially outer peripheral side of the polishing pad 4 by the nozzle moving mechanism 114 while the polishing pad 4 is rotated in this manner, the rotation center C of the polishing pad 4 is changed. The gas is blown spirally from the center of the polishing pad 4 toward the radially outer peripheral side, and the pure water PW is flushed from the center of rotation C of the polishing pad 4 toward the radially outer peripheral side.
ここで、 研磨パッド 4がー回転する間にノズル移動機構 1 1 4がノズル 1 1 3 を研磨パッド 4の径方向外周側へ移動させる距離は、 研磨パッ ド 4の表面におい てすでに純水 P Wが押し流された領域 D 1 と、 新たに気体によって純水 P Wが押 し流される領域 D 2とが径方向に連続する範囲内とされており、 これによつて研 磨パッド 4上の純水 P Wがもれなく押し流されるようになつている。  Here, the distance that the nozzle moving mechanism 114 moves the nozzle 113 toward the radially outer peripheral side of the polishing pad 4 while the polishing pad 4 rotates is determined by the amount of pure water PW on the surface of the polishing pad 4. The area D 1 where the water is swept away and the area D 2 where the pure water PW is newly swept away by the gas are within a range that is continuous in the radial direction, whereby the pure water on the polishing pad 4 is formed. PW is being washed away without exception.
また、 吹付装置 1 1 2は、 研磨パッド 4の表面において、 その回転中心 Cから 少なくとも被研磨材の研磨に使用される領域の径方向最外周位置まで気体を吹き 付ける。  The spraying device 112 blows gas from the center of rotation C of the surface of the polishing pad 4 to at least a radially outermost position of a region used for polishing the material to be polished.
そして、 このように研磨パッド 4の表面において少なくとも被研磨材の研磨に 使用される領域から純水 P Wを除去した後に、 従来の研磨装置 1 と同様にして、 研磨パッド 4の表面にスラリーを供給しながら、 新たな被研磨材の研磨を行う。 このように構成される研磨装置 1 1 1によれば、 吹付装置 1 1 2によって研磨 パッド 4の表面に気体を吹付けることで、 ドレッシング後、 または前回の研磨ェ 程の後に研磨パッド 4上に残った純水 P Wを除去することができ、 研磨パッド 4 上にスラリーを供給してもスラリーが純水 P Wによって薄められることがなくな るので、 新たに被研磨材を研磨する研磨工程において、 従来研磨パッド 4上から 純水 P Wを除去するために研磨パッド 4上に供給していた分のスラリ一が不要と なり、 研磨性能を維持しつつ、 スラリーの消費量を 3〜5 O m L Zm ί n、 望ま L <^i 7〜2 0 m L /m i n (従来の研磨に比べて約 3 %〜 5 0 %) と、 著しく 低減することができる。 Then, after removing the pure water PW from at least the region used for polishing the workpiece on the surface of the polishing pad 4, the slurry is supplied to the surface of the polishing pad 4 in the same manner as in the conventional polishing apparatus 1. While polishing, a new material to be polished is polished. According to the polishing apparatus 111 configured as described above, the gas is blown onto the surface of the polishing pad 4 by the spraying apparatus 1 1 2 so that the gas is applied onto the polishing pad 4 after dressing or after the previous polishing step. The remaining pure water PW can be removed, and even if the slurry is supplied onto the polishing pad 4, the slurry is not diluted by the pure water PW. Conventionally, the amount of slurry that had been supplied on the polishing pad 4 to remove the pure water PW from the polishing pad 4 becomes unnecessary, and the slurry consumption is reduced by 3 to 5 OmL while maintaining the polishing performance. Zm ί n, desired L <^ i 7 ~ 20 ml / min (approximately 3% ~ 50% compared to conventional polishing) Can be reduced.
さらに表面に S i G e層を形成したシリコンゥエーハでは、 表面粗さの規格が 厳しく、 より高い平坦度が要求されるので、 本願発明はこのようなシリコンゥェ 一八の研磨に特に有効であり、 さらに研磨圧力を 1 0〜5 0 k P a望ましくは 1 3〜4 0 k P aに抑えることができる。  Furthermore, in the silicon wafer having a SiGe layer formed on the surface, the surface roughness is strictly required and higher flatness is required. Therefore, the present invention is particularly effective for polishing such a silicon wafer. Further, the polishing pressure can be suppressed to 10 to 50 kPa, preferably 13 to 40 kPa.
ここで、 上記実施の形態では、 ノズル 1 1 3を研磨パッド 4の表面に向けた構 成としたが、 ノズル 1 1 3を研磨パッド 4の表面に対して径方向外周側に向けて 傾斜させてもよい。 この場合には、 気体がノズル 1 1 3から研磨パッド 4の径方 向外周側に向けて吐出されるので、 研磨パッド 4上の純水 P Wを研磨パッド 4の 径方向外周側に向けてより効果的に押し流すことができる。  Here, in the above-described embodiment, the nozzle 113 is directed to the surface of the polishing pad 4. However, the nozzle 113 is inclined toward the radially outer peripheral side with respect to the surface of the polishing pad 4. You may. In this case, the gas is discharged from the nozzles 11 to 13 toward the radially outer peripheral side of the polishing pad 4, so that the pure water PW on the polishing pad 4 is directed toward the radially outer peripheral side of the polishing pad 4. It can be washed away effectively.
また、 上記実施の形態では、 吹付装置 1 1 2を、 ノズル 1 1 3に気体供給源 1 1 6を接続して、 研磨パッド 4に対して気体を吹付ける構成としたが、 これに限 られることなく、 ノズル 1 1 3に、 気体供給源 1 1 6の代わりにスラリーを供給 するスラリー供給源を接続して、 ノズル 1 1 3から研磨パッド 4に対して スラリーを吹付ける構成としてもよい。  Further, in the above-described embodiment, the spraying device 1 12 is configured to connect the gas supply source 116 to the nozzle 113 and blow the gas to the polishing pad 4. However, the present invention is not limited to this. Instead of the gas supply source 116, a slurry supply source for supplying slurry may be connected to the nozzle 113, and the slurry may be sprayed from the nozzle 113 to the polishing pad 4.
この場合には、 吹付装置 1 1 2によって研磨パッド 4の表面にスラリーを吹付 けることで、 研磨パッド 4の表面に吹付けられるスラリーによって研磨パッド 4 上の純水 P Wを押し流して純水 P Wとスラリーとを置換することができるので、 従来のように単に研磨パッド 4上にスラリーを供給してこのスラリーの流れによ つて純水 P Wを研磨/ ッド 4上から押し流す方法よりも効率的に純水 P Wを押し 流すことができ、 純水 P Wとスラリーとの置換に使用するスラリーの量を低減す ることができる。  In this case, by spraying the slurry on the surface of the polishing pad 4 with the spraying device 1 1 2, the slurry sprayed on the surface of the polishing pad 4 flushes the pure water PW on the polishing pad 4 to remove the pure water PW. Since the slurry can be replaced with a slurry, it is more efficient than the conventional method in which the slurry is simply supplied onto the polishing pad 4 and the pure water PW is flushed from the polishing pad 4 by the flow of the slurry. Pure water PW can be washed away, and the amount of slurry used for replacing pure water PW with slurry can be reduced.
また、 上記実施の形態では、 ノズル移動機構 1 1 4は、 ノズル 1 1 3を研磨パ ッド 4の径方向に移動させる構成としたが、 これに限られることなく、 ノズル移 動機構 1 1 4は、 ノズル 1 1 3を研磨パッド 4の表面において少なくとも被研磨 材の研磨に使用される領域全域を移動させる構成としてもよい。 この場合には、 研磨パッド 4を静止させた状態で、 ノズル 1 1 3から気体またはスラリーを吐出 させながらノズル移動機構 1 1 4によってノズル 1 1 3を研磨パッド 4の表面上 で少なくとも前記領域上を移動させて、 この領域での純水 P Wの除去やスラリー の吹付けを行う。 第七の実施の形態 In the above-described embodiment, the nozzle moving mechanism 114 is configured to move the nozzle 113 in the radial direction of the polishing pad 4. However, the present invention is not limited to this. The nozzle 4 may be configured so that the nozzles 11 and 13 are moved at least over the entire area of the surface of the polishing pad 4 used for polishing the workpiece. In this case, with the polishing pad 4 stationary, the nozzle 113 is moved by the nozzle moving mechanism 114 while discharging the gas or slurry from the nozzle 113, and at least on the above-mentioned region on the surface of the polishing pad 4. To remove pure water PW and slurry in this area. Spraying. Seventh embodiment
以下、 本発明の第七の実施の形態にかかる研磨装置を図面を参照して説明する 。 ここで、 図 1 3は本実施形態にかかる研磨装置の構成を示す縦断面図である。 本実施形態にかかる研磨装置において、 第六の実施の形態に示す研磨装置 1 1 1と同一または同様の部分については同一の符号を用いて説明する。  Hereinafter, a polishing apparatus according to a seventh embodiment of the present invention will be described with reference to the drawings. Here, FIG. 13 is a longitudinal sectional view showing the configuration of the polishing apparatus according to the present embodiment. In the polishing apparatus according to the present embodiment, the same or similar parts as those of the polishing apparatus 111 shown in the sixth embodiment will be described using the same reference numerals.
図 1 3に示すように、 本実施形態にかかる研磨装置 1 3 1は、 第六の実施の形 態に示す研磨装置 1 1 1において、 ノズル 1 1 3に、 気体供給源 1 1 6だけでな く、 スラリー供給源 1 3 2を接続したものである。  As shown in FIG. 13, the polishing apparatus 13 1 according to the present embodiment is different from the polishing apparatus 1 11 shown in the sixth embodiment in that the nozzle 1 13 and the gas supply source 1 16 are used alone. Instead, a slurry supply source 1 32 was connected.
スラリー供給源 1 3 2は、 第二の配管 1 3 3を通じてノズル1 1 3に接続され ている。 第二の配管 1 3 3には第二のバルブ 1 3 4が設けられており、 第二のバ ルブ 1 3 4を開閉することで、 ノズル 1 1 3へのスラリーの供給及び供給の停止 を制御することができるようになつている。 Slurry supply source 1 3 2 is connected to the nozzle 1 1 3 through the second pipe 1 3 3. The second pipe 13 3 is provided with a second valve 13 4 .By opening and closing the second valve 13 4, the supply of the slurry to the nozzle 13 and the stop of the supply are stopped. You can control it.
本実施の形態では、 ノズル 1 1 3のノズル本体 1 1 3 aに、 第一の配管 1 1 7 と吐出口 1 1 3 bとを接続する第一の流路 1 1 3 cが設けられており、 第一の流 路 1 1 3 cには、 第二の配管 1 3 3に通じる第二の流路 1 1 3 dが接続されてい る。  In the present embodiment, the nozzle body 1 13 a of the nozzle 1 13 is provided with a first flow path 1 13 c connecting the first pipe 1 17 and the discharge port 1 13 b. The first flow path 113c is connected to a second flow path 113d leading to the second pipe 133.
このノズル 1 1 3は、 第一の配管 1 1 7から第一の流路 1 1 3 cに気体を供給 することで、 ベンチユリ一効果を利用して、 第二の配管 1 3 3から第二の流路 1 1 3 d内に供給されたスラリーを吸い出して吐出口 1 1 3 bから吐出させるもの である。  The nozzle 113 supplies gas from the first pipe 113 to the first flow path 113c, and utilizes the bench lily effect to make the second pipe 133 from the second pipe 133. The slurry supplied into the flow path 113d is sucked out and discharged from the discharge port 113b.
すなわち、 ノズル 1 1 3に、 気体供給源 1 1 6からの気体のみを送り込むこと で、 ノズル 1 1 3からは気体のみが吐出されることとなり、 ノズル 1 1 3に気体 を送り込みつつさらにスラリー供給源 1 3 2からスラリーを供給することで、 ノ ズル 1 1 3からスラリーが吐出されることとなる。  That is, by sending only the gas from the gas supply source 116 to the nozzle 113, only the gas is discharged from the nozzle 113, and the slurry is further supplied while the gas is sent to the nozzle 113. By supplying the slurry from the source 13 2, the slurry is discharged from the nozzle 13.
この構成では、 スラリー供給源 1 3 2から第二の配管 1 3 3内に供給されるス ラリーは気体に接触することがなく、 第二の配管 1 3 3内でスラリーが乾燥して 凝固してしまうことがない。 蘭 77 In this configuration, the slurry supplied from the slurry supply source 132 into the second pipe 133 does not come into contact with the gas, and the slurry dries and solidifies in the second pipe 133. I won't. Orchid 77
34 34
また、 ノズル 1 1 3には、 例えば純水等の洗浄液を供給する洗浄液供給源 1 3 6が第三の配管 1 3 7を介して接続されている。 第三の配管 1 3 7には、 第三の バルブ 1 3 8が設けられており、 第三のバルブ 1 3 8を開閉することで、 ノズル 1 1 3への洗浄液の供給及び供給の停止を制御することができる。  Further, a cleaning liquid supply source 136 for supplying a cleaning liquid such as pure water, for example, is connected to the nozzle 113 via a third pipe 137. The third pipe 1337 is provided with a third valve 1338.By opening and closing the third valve 1338, the supply of the cleaning liquid to the nozzle 113 and the stop of the supply are stopped. Can be controlled.
ここで、 前記第二、 第三のバルブ 1 3 4、 1 3 8は、 手動で開閉される構成と するほか、 図示せぬ制御装置によって開閉を制御される構成とすることができる 本実施の形態では、 第三の配管 1 3 7は、 第二の配管 1 3 3においてノズル 1 1 3との接続部の近傍位置に接続されていて、 第二の配管 1 3 3を介してノズル 1 1 3と接続されている。 これにより、 洗浄液供給源 1 3 6からは、 第三の配管 1 3 7及び第二の配管 1 3 3を通じて洗浄液がノズル 1 1 3の第二の流路 1 1 3 dに供給され、 さらに第一の流路 1 1 3 cを通じて吐出口 1 1 3 bから吐出され る。  Here, the second and third valves 13 4 and 13 8 may be configured to be manually opened and closed, or may be configured to be opened and closed by a control device (not shown). In the embodiment, the third pipe 13 7 is connected to the second pipe 13 3 at a position near the connection with the nozzle 11 3, and the third pipe 13 7 is connected to the nozzle 11 via the second pipe 13 3 Connected with 3. As a result, the cleaning liquid is supplied from the cleaning liquid supply source 1336 to the second flow path 113d of the nozzle 113 through the third pipe 133 and the second pipe 133. It is discharged from the discharge port 113 b through one channel 113 c.
以下に、 このように構成される研磨装置 1 3 1による被研磨材の研磨工程につ いて説明する。  Hereinafter, a polishing process of a material to be polished by the polishing apparatus 13 1 configured as described above will be described.
この研磨装置 1 3 1は、 第六の実施の形態で示した研磨装置 1 1 1 と同様、 ド レッシング後の初回の研磨工程、 または前回の研磨工程の後に行われる研磨工程 に特徴を有している。  This polishing apparatus 131, like the polishing apparatus 111 shown in the sixth embodiment, has a feature in the first polishing step after dressing or in the polishing step performed after the previous polishing step. ing.
この研磨工程においては、 まず、 研磨装置 1 1 1による研磨工程と同様に、 気 体による研磨/ ッド 4上の純水 P Wの除去を行う。  In this polishing step, first, pure water PW on the polishing head 4 is removed by gas, as in the polishing step by the polishing apparatus 11.
その後、 ノズル移動機構 1 1 4によって再びノズル 1 1 3を研磨パッド 4の回 転中心 C (もしくは研磨パッド 4において被研磨材の研磨に使用される領域の径 方向最内周位置) に対向する位置に位置させる。  Thereafter, the nozzle 1 13 is again moved by the nozzle moving mechanism 114 so that the nozzle 113 faces the rotation center C of the polishing pad 4 (or the radially innermost peripheral position of the region used for polishing the workpiece in the polishing pad 4). Position.
そして、 この状態でノズル 1 1 3からスラリーを研磨パッド 4の表面に吹付け 、 プラテン 3を駆動して研磨パッド 4を回転させた状態で、 ノズル移動機構 1 1 4によってノズル 1 1 3を研磨パッド 4の径方向外周側に向けて移動させる。 これにより、 研磨パッド 4の回転中心 C (または径方向内周側) から径方向外 周側に向けて渦巻状にくまなくスラリ一が吹付けられる。  Then, in this state, the slurry is sprayed from the nozzles 113 onto the surface of the polishing pad 4, and the platen 3 is driven to rotate the polishing pad 4, and the nozzle 113 is polished by the nozzle moving mechanism 114. The pad 4 is moved toward the radially outer peripheral side. As a result, the slurry is sprayed spirally from the rotation center C (or the radially inner peripheral side) of the polishing pad 4 toward the radially outer peripheral side.
ここで、 研磨パッド 4がー回転する間にノズル移動機構 1 1 4がノズル 1 1 3 0777 Here, while the polishing pad 4 rotates, the nozzle moving mechanism 1 1 4 moves the nozzle 1 1 3 0777
35 35
を研磨パッド 4の径方向外周側へ移動させる距離は、 研磨パッド 4の表面におい てすでにスラリーが吹き付けられている領域と、 新たにスラリーが吹付けられる 領域とが径方向に連続する範囲内とされており、 これによつて研磨パッド 4の表 面にまんべんなくスラリーが吹付けられるようになつている。 The distance by which the slurry is moved to the outer peripheral side in the radial direction of the polishing pad 4 is within a range in which the area where the slurry is already sprayed on the surface of the polishing pad 4 and the area where the slurry is newly sprayed are continuous in the radial direction. As a result, the slurry can be evenly sprayed on the surface of the polishing pad 4.
このようにスラリ一の吹付けを終えた後などの適宜時期に、 ノズル移動機構 1 1 4によってノズル 1 1 3を研磨パッド 4上から退避させた状態で、 洗浄液供給 源 1 3 6から洗浄液をノズル 1 1 3内に供給して、 洗浄液によってノズル 1 1 3 内のスラリーを洗い流し、 次回の使用に備える。 このようにノズル 1 1 3内を洗 浄することで、 ノズル 1 1 3内でのスラリーの詰まりを防止することができる。 このように構成される研磨装置 1 3 1によれば、 吹付装置 1 1 2が気体とスラ リーのうちの一方を研磨パッド 4に選択的に吹きつける構成とされており、 まず 研磨パッド 4に気体を吹付けて研磨パッド 4上の純水 P Wを除去した後に、 研磨 パッド 4にスラリーを吹付けることで、 図 1 3に示すように研磨パッド 4上に純 水 P Wによって薄められていないスラリーの層 Pを形成することができる。 この研磨装置 1 3 1では、 研磨パッド 4にスラリーを吹き付けることで研磨パ ッド 4上に直接スラリーの層 Pを形成するので、 従来のように研磨パッド 4上に 単にスラリーを供給してその流れによってスラリーの層を形成する方法に比べて 、 スラリーの消費量を低減することができる。 実施例  At an appropriate time, such as after finishing the spraying of the slurry, the cleaning liquid is supplied from the cleaning liquid supply source 1 36 while the nozzle 1 13 is retracted from above the polishing pad 4 by the nozzle moving mechanism 1 14. It is supplied into the nozzle 113 and the slurry inside the nozzle 113 is washed away with the cleaning liquid, so that it is ready for the next use. By washing the inside of the nozzle 113 in this way, clogging of the slurry inside the nozzle 113 can be prevented. According to the polishing apparatus 13 1 configured as described above, the spraying apparatus 1 12 is configured to selectively blow one of the gas and the slurry to the polishing pad 4. After the gas is blown to remove the pure water PW on the polishing pad 4, the slurry is sprayed on the polishing pad 4 so that the slurry not diluted by the pure water PW on the polishing pad 4 as shown in Fig. 13 Layer P can be formed. In this polishing apparatus 13 1, the slurry P is formed directly on the polishing pad 4 by spraying the slurry on the polishing pad 4. The consumption of the slurry can be reduced as compared with the method of forming the slurry layer by the flow. Example
実施例 1 Example 1
以下に、 本発明にかかる研磨へッドを用いて本発明にかかる研磨方法によって ゥエーハ Wの研磨を行った場合 (以下、 本願発明による研磨とする) と、 従来の 研磨へッドを用いて従来の研磨方法によってゥエーハ Wの研磨を行った場合 (以 下、 従来の研磨とする) とで、 研磨性能の比較を行った。 ここで、 この研磨試験 では、 本発明にかかる研磨ヘッドとして、 第五の実施の形態に示した研磨ヘッド 6 1を用いた。  Hereinafter, when polishing the wafer W by the polishing method according to the present invention using the polishing head according to the present invention (hereinafter referred to as polishing according to the present invention), and using the conventional polishing head, The polishing performance was compared between the case where the wafer W was polished by the conventional polishing method (hereinafter referred to as conventional polishing). Here, in this polishing test, the polishing head 61 shown in the fifth embodiment was used as the polishing head according to the present invention.
従来の研磨では、 十分な研磨性能を得るためには、 研磨ヘッド一台につき、 ス ラリーの流量を約 1 O O m L Zm i nで供給する必要があるのに対し、 本願発明 による研磨では、 研磨性能を低下させることなく、 研磨ヘッド一台につき、 スラ リーの流量を 1 O m L Zm i nと、 従来の研磨に比べて約 1 1 0まで流量を低 減させることができた。 In conventional polishing, in order to obtain sufficient polishing performance, it is necessary to supply a slurry flow rate of about 100 mL Zmin per polishing head. Polishing, the slurry flow rate can be reduced to 1 Om L Zmin per polishing head without deteriorating the polishing performance, which is about 110 compared to conventional polishing. Was.
また、 本願発明による研磨では、 このようにスラリーの使用量を著しく低減さ せた状態でゥヱーハ Wの研磨が可能であるため、 総量としてのスラリ一凝集粒子 が減ることとなり、 ゥェ一 /、Wに生じるマイクロスクラッチが減少する。  In addition, in the polishing according to the present invention, since the wafer W can be polished in such a state that the amount of the slurry used is remarkably reduced, the total amount of slurry aggregated particles is reduced. Micro scratches generated in W are reduced.
これにより、 ゥェ一ハ Wの表面の表面粗さ (P V値) が小さくなリ、 良好な研 磨性能を得ることができる。 表面に S i G e層を形成したシリコンゥエーハでは 、 表面粗さの規格が厳しく、 より高い平坦度が要求されるので、 本願発明はこの ようなシリコンゥエーハの研磨に特に有効である。 実施例 2  As a result, the surface roughness (PV value) of the wafer W can be reduced, and good polishing performance can be obtained. Since the silicon wafer having the SiGe layer formed on the surface has strict surface roughness specifications and requires higher flatness, the present invention is particularly effective for polishing such a silicon wafer. Example 2
本発明にかかる研磨装置 1 1 1を用いて、 ドレッシング後の初回の研磨工程、 または前回の研磨工程の後の研磨工程において、 吹付装置 1 1 2を使用して研磨 パッド 4上の純水の除去を行ってから研磨を行う場合と、 吹付装置 1 1 2を使用 せずに純水とスラリーとの置換を行いながら研磨を行う場合とのそれぞれの場合 について同じ研磨条件の下で研磨試験を行い、 その研磨性能の比較を行った。 以 下にこの結果を示す。  In the first polishing step after dressing or the polishing step after the previous polishing step using the polishing apparatus 111 according to the present invention, pure water on the polishing pad 4 is sprayed using the spraying apparatus 112. Polishing tests were carried out under the same polishing conditions for polishing after removal and polishing when replacing with pure water and slurry without using the spraying device. The polishing performance was compared. The results are shown below.
ここでは、 研磨性能として、 被研磨材の研磨レートと面内均一性 (平坦度) と について着目するとともに、 研磨パッド 4上に供給するスラリーの流量と研磨性 能との関係についても検証した。  Here, as the polishing performance, attention was paid to the polishing rate and in-plane uniformity (flatness) of the material to be polished, and the relationship between the flow rate of the slurry supplied onto the polishing pad 4 and the polishing performance was also verified.
図 1 4に示すように、 スラリーの流量を 1 0 0 c c Zm ί ηと十分に確保した 条件下では、 吹付装置 1 2を使用した場合と吹付装置 1 2を使用しなかった場合 とでは、 吹付装置 1 2を使用した場合の方が研磨レート及び面内均一性は良好で あるものの、 その差は小さかった。  As shown in Fig. 14, under the condition that the flow rate of the slurry was 100 cc Zm η η, the spraying device 12 and the spraying device 12 were not used. Although the polishing rate and in-plane uniformity were better when the spraying device 12 was used, the difference was small.
しかし、 スラリーの流量を低減させてゆくにつれて、 吹付装置 1 2を使用しな かった場合には、 研磨レート及び面内均一性が明らかに低下してゆくのに対し、 吹付装置 1 1 2を使用した場合には、 研磨レートの低下及び面内均一性の低下は わずかであった。 この傾向はスラリーの流量を低減させてゆくにつれてより顕著となり、 スラリ 一の流量を 1 0 c c Zm i nとした条件下では、 吹付装置 1 2を使用しなかった 場合の研磨レートは、 最も研磨レー卜の高かった場合に比べて 4 0 %低下してい る。 However, as the flow rate of the slurry is reduced, the polishing rate and in-plane uniformity are clearly reduced when the spraying device 12 is not used, whereas the spraying device 1 12 is not used. When used, the reduction in polishing rate and the reduction in in-plane uniformity were slight. This tendency becomes more remarkable as the flow rate of the slurry is reduced, and under the condition that the flow rate of the slurry is 10 cc Zmin, the polishing rate when the spraying device 12 is not used is the highest. It is 40% lower than when the birds were high.
これに対し、 吹付装置 1 1 2を使用した場合には、 スラリーの流量を低減して も、 研磨レートは、 最も研磨レートの高かった場合に比べて 2 0 %の低下にとど まっている。 また、 面内均一性についても劣化の度合いが小さくなつている。 これは、 吹付装置 1 1 2を使用しない場合には、 研磨パッド 4上に残留する純 水によってスラリーが薄められ、 また研磨パッド 4の各所でスラリー濃度に差が 生じている状態で研磨が行われているのに対して、 吹付装置 1 1 2を使用した場 合には、 研磨パッド 4上のスラリーが薄められておらず、 また研磨パッド 4の各 所におけるスラリー濃度が均一となっている状態で研磨が行われているためと思 われる。  On the other hand, when the spraying device 112 was used, the polishing rate was reduced by only 20% compared to the case where the polishing rate was the highest, even if the flow rate of the slurry was reduced. . Also, the degree of deterioration of the in-plane uniformity is reduced. This is because when the spraying device 112 is not used, the slurry is diluted by pure water remaining on the polishing pad 4 and polishing is performed in a state where there is a difference in the slurry concentration at various points of the polishing pad 4. On the other hand, when the spraying device 1 1 and 2 were used, the slurry on the polishing pad 4 was not diluted, and the slurry concentration at each part of the polishing pad 4 was uniform. This is probably because polishing was performed in this state.
そして、 スラリーの流量を十分に確保した場合には、 研磨パッド上に残留する 純水の量に対してスラリーの量が多いために、 吹付装置 1 1 2を使用しない場合 でもスラリーの濃度をある程度維持することができるが、 スラリ一の流量が少な くなると、 吹付装置 1 1 2を使用しない場合にはスラリーの濃度が低くなるので 、 スラリ一の流量が少なくなるにつれて研磨性能の差が顕著に表れたものと思わ れる。  When the flow rate of the slurry is sufficiently ensured, the amount of the slurry is larger than the amount of pure water remaining on the polishing pad. Although it can be maintained, when the flow rate of the slurry decreases, the concentration of the slurry decreases when the spraying device 1 12 is not used, so the difference in polishing performance becomes remarkable as the flow rate of the slurry decreases. It seems to have appeared.
このように、 本発明にかかる研磨装置によれば、 ドレッシング後の初回の研磨 工程、 または前回の研磨工程の後に行う研磨工程において、 吹付装置 1 2を用い ることで、 スラリーの流量が少ない条件下でもスラリーの濃度を適正に保って研 磨性能を維持することができるので、 スラリーの流量を低減してスラリーの消費 量を低減することができる。 産業上の利用可能性  As described above, according to the polishing apparatus of the present invention, in the first polishing step after dressing or in the polishing step performed after the previous polishing step, by using the spraying device 12, the condition that the flow rate of the slurry is small is used. Since the polishing performance can be maintained while maintaining the slurry concentration at a proper level even below, the flow rate of the slurry can be reduced and the consumption of the slurry can be reduced. Industrial applicability
本発明にかかる研磨ヘッド及び研磨方法によれば、 被研磨材の研磨時には、 ス ラリーが液体供給路を通じてキヤリアの外周面とリテーナリングの内周面との間 隙、 すなわち、 被研磨材の外周に位置する間隙に供給されるので、 プラテンの回 転やリテーナリングに妨げられることなく、 被研磨材と研磨パッドとの間にスラ リーが直接かつ十分な量供給される。 According to the polishing head and the polishing method of the present invention, at the time of polishing the workpiece, the slurry passes through the liquid supply passage between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring, that is, the outer periphery of the workpiece. Is supplied to the gap located at The slurry is directly and sufficiently supplied between the workpiece and the polishing pad without being hindered by rolling or retainer ring.
また、 被研磨材と研磨パッドとの間に供給されたスラリーは、 リテーナリング によって周囲を囲われていて、 研磨へッドゃプラテンの回転による遠心力を受け てもリテ一ナリングの外周に流出しにくいので、 スラリーを効率良く使用するこ とができる。 従って、 最小限のスラリーの使用量で効率よく研磨を行うことがで き、 高価なスラリーの使用量を著しく低減することができる。  Also, the slurry supplied between the workpiece and the polishing pad is surrounded by the retainer ring, and flows out to the outer periphery of the retainer ring even when subjected to centrifugal force due to the rotation of the polishing head and the platen. The slurry can be used efficiently because it is difficult to use. Therefore, polishing can be efficiently performed with a minimum amount of slurry used, and the amount of expensive slurry used can be significantly reduced.
そして、 研磨へッド自体が回転することによリスラリ一はまんべんなく研磨パ ッド表面に供給され、 スラリーを効率良く研磨に寄与させることができる。 また、 液体供給路にスラリー及び洗浄液のいずれか一方を選択的に供給するス ラリー 洗浄液供給機構を設けた構成とすることで、 研磨時にはスラリー 洗浄 液供給機構によって液体供給路へスラリーを供給し、 研磨作業を終えた際などの 適宜時期に、 スラリー 洗浄液供給機構からの液体供給路へのスラリーの供給を 停止し、 代わりに液体供給路に洗浄液を供給することで、 液体供給路内、 及びキ ャリアの外周面とリテーナリングの内周面との間隙内に残留しているスラリーを 、 スラリーが乾燥または変質しないうちに洗浄液によって洗い流すことができる また、 溝を設けたことにより、 キャリアの外周面またはリテーナリングの内周 面に供給されたスラリーは溝によりそれぞれの全周から流れ落ちるので、 被研磨 材の外周全周から被研磨材と研磨パッドとの間にスラリーがほぼ均一に供給され ることとなり、 被研磨材の全面で研磨量をほぼ均一にすることができる。  By rotating the polishing head itself, the slurry is evenly supplied to the surface of the polishing pad, and the slurry can be efficiently contributed to polishing. In addition, by providing a slurry cleaning liquid supply mechanism for selectively supplying either the slurry or the cleaning liquid to the liquid supply path, the slurry is supplied to the liquid supply path by the slurry cleaning liquid supply mechanism during polishing. At an appropriate time, such as when the polishing operation is completed, the supply of the slurry from the slurry cleaning liquid supply mechanism to the liquid supply path is stopped, and the cleaning liquid is supplied to the liquid supply path instead. The slurry remaining in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring can be washed away with the cleaning liquid before the slurry is dried or deteriorated. Also, by providing the groove, the outer peripheral surface of the carrier is provided. Alternatively, the slurry supplied to the inner peripheral surface of the retainer ring flows down from the entire periphery by the groove, so that the entire peripheral surface of the workpiece is polished. Luo becomes Rukoto slurry is substantially uniformly supplied between the polishing pad and the object of polishing, it can be made substantially uniform amount of polishing the entire surface of the object to be polished.
さらに、 流路 Aがキャリアの中央から外周側に向けて略放射状に形成された場 合には、 キャリア全体を液体により冷却することができ、 キャリアの熱変形をよ り効果的に抑えることができる。 さらに、 被研磨材の研磨時には、 研磨ヘッドの 回転に伴って生じる遠心力によりキャリアの外周面へのスラリーの供給をスムー ズに行うことができる。  Further, when the flow path A is formed substantially radially from the center of the carrier toward the outer periphery, the entire carrier can be cooled by the liquid, and the thermal deformation of the carrier can be more effectively suppressed. it can. Further, when polishing the material to be polished, the slurry can be smoothly supplied to the outer peripheral surface of the carrier by the centrifugal force generated by the rotation of the polishing head.
同様に、 キャリアの外周面とリテーナリングの内周面との間隙にこれらの上下 方向への相対的な変位を許容して接続する弾性体を設け、 弾性体に液体供給路に 接続された供給口を設けた場合も、 プラテンの回転ゃリテーナリングに妨げられ ることなく、 被研磨材と研磨パッドとの間に十分な量のスラリーが直接供給され 、 このスラリーはリテ一ナリングにより周囲を囲われ流出しにくいので、 最小限 のスラリーの使用量で効率よく研磨を行うことができる。 研磨へッド自体の回転 によリスラリーはまんべんなく研磨パッド表面に供給される。 Similarly, an elastic body is provided in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring so as to allow a relative displacement in the up and down direction and connected to the elastic body. Even if the mouth is provided, it is obstructed by the rotation of the platen and the retainer ring. A sufficient amount of slurry is directly supplied between the material to be polished and the polishing pad, and the slurry is surrounded by the retainer and hardly flows out, so that the slurry can be efficiently used with a minimum amount of slurry. Polishing can be performed. The reslurry is evenly supplied to the polishing pad surface by the rotation of the polishing head itself.
さらに、 スラリー 洗浄液供給機構を設けた場合も同様に、 供給口内、 及びキ ャリアの外周面とリテーナリングの内周面の間隙に残留しているスラリーを、 ス ラリーが関そうまたは変質しないうちに洗浄液によって洗い流すことができる。 また、 本発明にかかる研磨装置によれば、 吹付装置によって研磨パッドの表面 に、 気体またはスラリーのうちの少なくとも一方を吹付けて、 研磨パッド上に残 留している液体を押し流して除去することができるので、 従来研磨パッド上から 液体を除去するために研磨パッド上に供給していた分のスラリーが不要となるか 、 または従来よりも効率的にスラリーによって研磨パッド上の液体を押し流すこ とができるので、 スラリーの消費量を著しく低減することができる。  Similarly, when a slurry cleaning liquid supply mechanism is provided, the slurry remaining in the supply port and in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring is removed before the slurry is involved or deteriorated. It can be washed away with a washing liquid. Further, according to the polishing apparatus of the present invention, at least one of a gas and a slurry is sprayed on the surface of the polishing pad by the spraying device, and the liquid remaining on the polishing pad is flushed and removed. This eliminates the need for the slurry that had been supplied on the polishing pad to remove the liquid from the polishing pad in the past, or allows the slurry to flush the liquid on the polishing pad more efficiently than in the past. Therefore, the consumption of the slurry can be significantly reduced.

Claims

請求の範囲 The scope of the claims
1 . プラテン上に貼付された研磨パッドの表面に、 該研磨パッドに対して相対的 に移動しつつ被研磨材を押し付けて該被研磨材の研磨を行うための研磨へッドで あって、 1. A polishing head for polishing a material to be polished by pressing the material to be polished while moving relatively to the polishing pad on the surface of the polishing pad stuck on a platen,
研磨すべき被研磨材の一面をその下面で保持するキャリアと、  A carrier that holds one surface of the material to be polished on its lower surface,
前記キャリアの外周側に同心状に配置されて、 研磨時には前記研磨パッドに当 接しつつ内周面で前記キャリアに保持される前記被研磨材の外周を係止する円環 状のリテーナリングとを有し、  An annular retainer ring, which is concentrically arranged on the outer peripheral side of the carrier and which abuts on the polishing pad during polishing and locks the outer periphery of the material to be polished held on the inner peripheral surface by the carrier. Have
前記キャリアの外周面と前記リテーナリングの内周面との間隙に液体を供給す るための液体供給路を形成したことを特徴とする研磨へッド。  A polishing head, wherein a liquid supply path for supplying a liquid is formed in a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the retainer ring.
2 . 前記液体供給路は前記キャリアに設けた流路 A及び前記リテーナリングに設 けた流路 Bの少なくとも一方であることを特徴とする請求の範囲第 1項に記載の 研磨へッド。 2. The polishing head according to claim 1, wherein the liquid supply path is at least one of a flow path A provided in the carrier and a flow path B provided in the retainer ring.
3 . 前記液体供給路はスラリー及び洗浄液の何れか一方を選択的に供給するスラ リー Z洗浄液供給機構に接続されることを特徴とする請求の範囲第 1項に記載の 研磨へッド。 3. The polishing head according to claim 1, wherein the liquid supply path is connected to a slurry Z cleaning liquid supply mechanism that selectively supplies one of a slurry and a cleaning liquid.
4 . 前記キャリアの外周面の全周に、 前記流路 Aに接続され流路 Aから前記液体 が供給される溝 Aが形成されていること特徴とする請求の範囲第 2項に記載の研 磨へッド。 4. The polishing method according to claim 2, wherein a groove A connected to the flow path A and supplied with the liquid from the flow path A is formed all around the outer peripheral surface of the carrier. Polished head.
5 . 前記リテ一ナリングの内周面の全周に、 前記流路 Bに接続され流路 Bから前 記液体が供給される溝 Bが形成されていることを特徴とする請求の範囲第 2項に 記載の研磨へッド。 5. A groove B connected to the flow path B and supplied with the liquid from the flow path B is formed in the entire circumference of the inner peripheral surface of the retainer ring. Polishing head as described in section.
6 . 前記流路 Aを前記キャリアの上面中央から外周面の複数箇所に通じさせ、 か つ中央から外周側に向けて略放射状に形成するることを特徴とする請求の範囲第 2項に記載の研磨へッド。 6. The flow path A is communicated from the center of the upper surface of the carrier to a plurality of locations on the outer peripheral surface, 3. The polishing head according to claim 2, wherein the polishing head is formed substantially radially from the center to the outer peripheral side.
7 . 前記液体供給路は円環状で、 直径が 2 m m以上 1 O m m以下に形成されてい ることを特徴とする請求の範囲第 1項に記載の研磨へッド。 7. The polishing head according to claim 1, wherein the liquid supply path is annular, and has a diameter of 2 mm or more and 1 Omm or less.
8 . 前記キヤリアの外周面と前記リテーナリングの内周面との間隙にこれらの上 下方向への相対的な変位を許容して接続する弾性体を設け、 8. An elastic body is provided in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the retainer ring to allow relative displacement in the upward and downward directions and to connect them.
前記弾性体に前記間隙に液体を供給するための供給口を設け、  Providing a supply port for supplying liquid to the gap in the elastic body,
前記供給口に前記液体供給路を接続したことを特徴とする請求の範囲第 1項に 記載の研磨へッド。  The polishing head according to claim 1, wherein the liquid supply path is connected to the supply port.
9 . 前記キャリアの外周縁と前記リテーナリングの内周縁の少なくとも一方に、 前記弾性体と対向する部位に、 他方の周縁部との間に収容空間を形成する収容部 が設け、 9. At least one of an outer peripheral edge of the carrier and an inner peripheral edge of the retainer ring is provided at a portion facing the elastic body with a housing portion that forms a housing space between the other peripheral portion,
前記弾性体には、 前記収容空間に対向する部位に前記供給口を設けることを特 徴とする請求の範囲第 8項に記載の研磨へッド。  9. The polishing head according to claim 8, wherein the supply port is provided in the elastic body at a portion facing the storage space.
1 0 . 該収容部の設けられる周縁部の全周に、 前記収容部が設けられていること を特徴とする請求の範囲第 9項に記載の研磨へッド。 10. The polishing head according to claim 9, wherein the housing portion is provided along the entire periphery of the peripheral portion where the housing portion is provided.
1 1 . 前記収容部め下面と該収容部の設けられる周縁部の周面との間隙に、 上方 に立設された壁部と、 1 1. A wall portion erected upward in a gap between the lower surface of the housing portion and a peripheral surface of a peripheral portion provided with the housing portion.
該壁部の周方向の複数箇所に、 前記収容部と前記周面とを接続する接続路とを 有することを特徴とする請求の範囲第 9項に記載の研磨へッド。  10. The polishing head according to claim 9, wherein a plurality of connection paths for connecting the housing portion and the peripheral surface are provided at a plurality of locations in a circumferential direction of the wall portion.
1 2 . 前記収容部の下面に、 前記周面に向かうにつれて次第に下方に向けて傾斜 する傾斜面が設けられていることを特徴とする請求の範囲第 1 1項に記載の研磨 へッ卜。 12. The polishing head according to claim 11, wherein an inclined surface is provided on a lower surface of the housing portion, the inclined surface being gradually inclined downward toward the peripheral surface.
1 3 . プラテン上に貼付された研磨パッドの表面に、 研磨へッドにより前記研磨 パッドに対して相対的に移動させつつ被研磨材を押しつけて該被研磨材の研磨を 行う研磨方法であって、 13. A polishing method in which a material to be polished is pressed against a surface of a polishing pad stuck on a platen while being moved relatively to the polishing pad by a polishing head, thereby polishing the material to be polished. hand,
請求の範囲第 1項に記載の研磨へッドを用いて、 前記液体供給路から前記キヤ リアの外周面と前記リテーナリングの内周面との間隙にスラリーを供給しながら 前記被研磨材の研磨を行う研磨方法。  The polishing head according to claim 1, wherein the slurry is supplied from the liquid supply path to a gap between an outer peripheral surface of the carrier and an inner peripheral surface of the retainer ring. A polishing method for performing polishing.
1 4 . プラテン上に貼付された研磨パッドの表面に、 研磨へッドにより前記研磨 パッ ドに対して相対的に移動させつつ被研磨材を押しつけて該被研磨材の研磨を 行う研磨装置であって、 14. A polishing apparatus that presses the material to be polished while pressing the material to be polished on the surface of the polishing pad stuck on the platen while relatively moving the polishing pad with the polishing head. So,
前記研磨パッ ドの表面に気体及びスラリーの少なくとも一方を吹付ける吹付装 置を設けることを特徴とする研磨装置。  A polishing apparatus, comprising: a spray device for blowing at least one of a gas and a slurry on a surface of the polishing pad.
1 5 . 前記吹付装置が、 前記気体または前記スラリーを吐出するノズルと、 該ノ ズルを前記研磨パッドの表面上で移動させるノズル移動機構とを有している請求 の範囲第 1 4項記載の研磨装置。 15. The spray device according to claim 14, wherein the spraying device has a nozzle for discharging the gas or the slurry, and a nozzle moving mechanism for moving the nozzle on the surface of the polishing pad. Polishing equipment.
1 6 . 前記ノズルには、 スラリー及び洗浄液の何れか一方を選択的に供給するス ラリー 洗浄液供給機構に接続されることを特徴とする請求の範囲第 1 5項記載 の研磨装置。 16. The polishing apparatus according to claim 15, wherein the nozzle is connected to a slurry cleaning liquid supply mechanism that selectively supplies one of a slurry and a cleaning liquid.
1 7 . 請求の範囲第 1 4項に記載の研磨装置を用いて行う被研磨材の研磨方法で あって、 前記吹付装置によって前記研磨パッドの表面に気体またはスラリーを吹 付けて前記研磨パッド上の液体を除去した後に、 前記研磨パッド上に前記スラリ 一を供給して前記被研磨材の研磨を行うことを特徴とする被研磨材の研磨方法。 17. A method for polishing a material to be polished using the polishing apparatus according to claim 14, wherein a gas or a slurry is blown onto the surface of the polishing pad by the spraying device. The method for polishing a material to be polished, comprising: supplying the slurry onto the polishing pad after the liquid is removed to polish the material to be polished.
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* Cited by examiner, † Cited by third party
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US20200055160A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method and apparatus

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Publication number Priority date Publication date Assignee Title
JP4374370B2 (en) * 2006-10-27 2009-12-02 信越半導体株式会社 Polishing head and polishing apparatus
TWI674171B (en) * 2012-01-31 2019-10-11 日商荏原製作所股份有限公司 Substrate holding device, polishing device, and polishing method
CN106514482B (en) * 2016-11-09 2019-08-23 上海华力微电子有限公司 A kind of cleaning device and cleaning method of wafer chemical mechanical polishing retaining ring
TWI602655B (en) * 2017-03-23 2017-10-21 Coolant flow guide for grinders
CN114654379B (en) * 2022-03-21 2023-04-07 北京晶亦精微科技股份有限公司 Grinding head and wafer grinding device with same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139060A (en) * 1994-11-04 1996-05-31 Ricoh Co Ltd Method of manufacturing semiconductor device and chemical machine polisher
JP2000127025A (en) * 1998-10-23 2000-05-09 Toshiba Corp Polishing device and polishing method
JP2000190211A (en) * 1998-12-24 2000-07-11 Lucent Technol Inc Chemical mechanical polishing device and its method
JP2000218517A (en) * 1999-01-26 2000-08-08 Hitachi Ltd Manufacturing method and device for electronic parts
EP1038636A2 (en) * 1999-03-26 2000-09-27 Applied Materials, Inc. A carrier head for providing a polishing slurry

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139060A (en) * 1994-11-04 1996-05-31 Ricoh Co Ltd Method of manufacturing semiconductor device and chemical machine polisher
JP2000127025A (en) * 1998-10-23 2000-05-09 Toshiba Corp Polishing device and polishing method
JP2000190211A (en) * 1998-12-24 2000-07-11 Lucent Technol Inc Chemical mechanical polishing device and its method
JP2000218517A (en) * 1999-01-26 2000-08-08 Hitachi Ltd Manufacturing method and device for electronic parts
EP1038636A2 (en) * 1999-03-26 2000-09-27 Applied Materials, Inc. A carrier head for providing a polishing slurry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200055160A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method and apparatus

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