201117278 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用於製造一半導體之裝置及方 法，特別係有關於一種用於以一單一晶圓處理方式拋光及 清潔一半導體基板之基板處理裝置及方法。 【先前技術】 在一般之半導體裝置製造製程中，應重複執行諸如沈 積製程、光刻製程（photolithography process)及飯刻製程 (etch process)等多數個單元製程來形成及堆疊薄膜。此 專製程係重複進行至在一晶圓（wafer)上形成所欲之預定 電路圖案為止。在形成電路圖案後，在晶圓之一表面上形 成許多不規則部（irregularities)。因現在半導體裝置已高度 積體化且亦开> 成多層式結構，故晶圓表面上不規則部之數 目以及該等不規則部^之高度差增大。結果，由於晶圓表 面不平坦’在光刻製程中可能會發生散焦（def〇cus)。因此， 為達成晶圓表面之平坦化，應定期地拋光晶圓表面。 現已開發出各種表面平坦化技術來平坦化一晶圓之表 面。在此專技術中’化學機械抛光（chemicai mechanicai Polishing ; CMP)技術被廣泛應用’乃因利用CMp技術可 將寬表面以及窄表面平坦化至較佳之平坦度。CMP裝置用 於利用機械摩擦及化學磨料（chemical abrasive)來拋光塗 有鎢或氧化物之晶圓之表面，且利用CMP裝置可達成極精 細之拋光。 當一拋光裝置拋光一晶圓時，拋光裝置將晶圓置於一 拋光墊之頂面’然後抵靠拋光墊按壓及旋轉晶圓。此一拋 光裝置包括一扣持環（retainer ring )’該扣持環環繞晶圓以 5/42 201117278 防止晶圓之一邊緣被過度拋光。然而，因在整個晶圓拋光 製程中，昂貴之扣持環皆與晶圓一起受到拋光，因而固定 環之更換週期較短，且其拆卸過程頗為複雜。 【發明内容】 本發明之具體實施例提供一種可提高拋光效率之基板 拋光裝置。 本發明之具體實施例亦提供一種使用前述基板拋光裝 置拋光一基板之方法。 本發明之具體實施例提供基板拋光裝置，其包括：一 基板支撐構件、一拋光單元及至少一個墊支撐構件。 一基板係安放於基板支撐構件上。拋光單元包括一拋 光墊及一墊驅動構件，拋光墊係設置於基板支撐構件上方 以抛光安放於絲支#構件上之基板，墊縣構件用以移 動拋光墊，以改變抛光墊相對於基板支韻件之—相對位 置。塾支撐構件係設置於基缺撐構件之—側，以在抛光 安放於基板支#構件上之基板之—邊緣時， 一拋光表面未接觸基板之一部分。 在本發明之其他具體實施例中，基板抛光裝置包括： 一蛛型單元、—可旋轉之基板支撐構件、-拋光單元以及 至少一個墊支撐構件。 $型單it具有1放的上部。基板支撐構件之上係安 ί板，基板支標構件並可旋轉職置辑型單元中。 括抛光塾及—塾驅動構件’抛光墊係設置於 二二牛上方以在—拋光製程中拋光安放於基板支撐 之土板’塾驅動構件用於將抛 邊緣區域或 樓構件上之基板之一中央區域移動至基板之 6/42 201117278 者移動至超出基板邊緣區域之一位置。墊支撐構件係設置 於绰型單元巾並包括-支料，支#減基板支撐構件間 隔開且係設置於基板支撐構件之一側。 在本發明之再一些具體實施例中，基板拋光方法係如 下所述。 安放一基板於一基板支撐構件上。設置一拋光墊於基 板支撐構件上方。在基板支撐構件與拋光墊至少一者旋轉 時，以拋光墊按壓及拋光基板。當拋光基板時，在一墊支 撐構件支撐拋光墊未接觸基板之一部分時，拋光基板之一 邊緣。 【實施方式】 以下，將參照附圖更詳細地闡述本發明之較佳具體實 施例。然而，本發明亦可實施為不同之形式，而不應被& 為僅限於本文所述之具體實施例。提供此等具體實施例反 而是為了使本發明之揭露内容透徹及完整、並向熟習此項 技術者全面傳達本發明之範圍。舉例而言，儘管使用一晶 圓作為一半導體基板，然本發明之技術範圍及精神並不僅 限於此。 圖1為根據本發明一具體貫施例之一單一晶圓型抛光 系統（single wafer type polishing system)之一示意圖。 參見圖1，根據本發明之一基板處理系統2〇〇〇可包括 —裝載/卸載單元10、一碼垛機械手（index r〇b〇t) 2〇、一 緩衝單元30'—主傳送機械手50、多數個基板拋光單元1〇〇〇 及一控制單元60。 裴載/卸載單元ίο包括多數個裝载埠ila、llb、llc及 Ud。儘管在本具體實施例中，裝載/卸載單元1〇包括四個 7/42 201117278 裝載埠lla、lib、lie及lid，然裝载埠]la、ub、以及 lid之數目亦可根據製程效率及基板處理系統2〇〇〇之佔用 面積（foot print)狀態而增減。 其中容置有晶圓之前開式統一標準盒（fr〇m叩如 unifiedpod ·’ F〇UP) 、12b、12c 及 12d 分別安放於裝載 # lla、11b、11c及lid上。多數個狹槽（sl〇t)設置於各 別FOUP 12a、12b、12c及12d中，以用於相對於地面沿— 水平方向容置晶圓。F0UP 12a、12b、仏及⑶容置已於 各別基板絲單元酬巾_處理之晶圓或者將被裝載至 各別基板拋光單元誦中之晶圓。以下，為便於說明，將 已於各別基板撤光單元1_中經過處理之晶圓稱為已處理 晶圓，=尚未經過處理之晶圓則被稱為原始晶圓。 .一第-傳送路徑41設置於裝_卩鮮元】Q與緩衝單 凡30之間。-第一傳送執道42言免置於第一傳送路㈣中。 手2〇設置於第-傳送執道42上。碼綠機械手2〇 :η執道42移動’以於裝載/卸載單元⑴與緩衝單 二輩晶圓。亦即，觸機械手2g自安放於裝载/ 個原^s上之f〇up 123、1213、仏及⑶取出至少-=曰自二裝載晶圓於緩衝單元3〇上。此外，碼蝾機 曰曰η於1緩衝早& 3G取出至少—個經處理晶圓，以裝載 =;女於裝载/卸載單元1〇上之F〇up .η 及 12d 〇 元3G設置於第-傳送路徑41之-側。緩衝單 光單==二傳送之原始_及在基板拋 專〔機械手50設置於一第二傳送路徑43中。-第 8/42 201117278 二傳送執道44設置於第二傳送路徑43中。主傳送機械手 50設置於第二傳送軌冑44上。主傳送機械手％沿第二傳 送執道44移動’以於緩衝單元30與基板拋光單元1〇〇〇之 間傳送晶圓。亦即，主傳送機械手5G自緩衝單元30取出 至少-個原始晶圓，以提供晶圓至基板抛光單幻_。此 外主傳送機械丁 5〇將由基板拋光單元1〇〇〇處理之晶圓 (即’經處理晶圓）裝載於緩衝單元30上。 基板抛光單元麵設置於第二傳送路徑43之兩側。 各別基板拋料元拋光並清潔原始晶圓，以製造經處 理晶圓。在基板拋光單元麵中，至少二基板抛光單元相 互面對，且第二傳送路徑43處於其間。在本發明之一實施 例中’由平面圖觀之，儘管二對基板抛光單元麵設置於 第二傳送路徑43之兩側且分別沿第二傳送路徑幻平行地 δ又置’然5又置於第二傳送路徑43兩側之基板拋光單元⑴㈨ 之數目可根據製程效率及基板處理系統2_之佔用面積狀 態而增減。 。。一各基板拋光單元1000連接至控制單元6〇，以根據控制 單兀60之控制而拋光及清潔原始晶圓。亦即，控制單元⑹ 控制基板拋光單元麵，以控制各基板抛光單元麵之抛 光。 以下，將參照附圖詳細闡述基板拋光單元1000之一配 置。 圖2為圖1所^!·:之一基板拋光單元之一立體圖，圖3 為圖2 _之-基板支料元及—蛛型單元之—局部剖切 立體圖。 麥見圖1至圖3，在基板處理系統2〇〇〇中，可在—個 9/42 201117278 基板抛光單元1000内依序執行一拋光製程及在該拋光製程 之後執行一清潔製程’該拋光製程係拋光一晶圓70之一頂 面’該清潔製程則清潔晶圓70之一表面。 具體而言’基板拋光單元1000可包括一基板支撐單元 100、一缽型單元200、一拋光單元300、一墊支撐構件4(U、 第一及第二製程流體供應單元510及520、一刷子單元 610、一噴霧單元（aerosol unit) 020及一墊調節單元（pad conditioning unit) 700。 由主傳送機械手50傳送之晶圓70安放於基板支撐單 疋100上。在晶圓70之拋光製程及清潔製程中，基板支撐 單元100支撐並固定晶圓7〇。基板支撐單元]〇〇可包括在 其上女放晶圓7〇之一旋轉頭（叩匕heacj)丨1〇、一用於支撐 旋轉頭110之支撐部件及一用於提供轉矩之旋轉驅動 部件。 於平面圖中觀看之旋轉頭11〇具有一實質圓形形狀， 且其一寬度自其一頂面至一底面逐漸減小。在本發明之一 貝她例中，支撐晶圓7〇之旋轉頭11〇之頂面之一面積小於 晶圓70之一面積。因此，自側面觀之，安放於旋轉頭ιι〇 上的晶圓70之一端自旋轉頭11〇之一頂端向外突出。 支樓部件120設置於旋魏11G下方，並連接至旋轉 驅動部件。切部件12Q具有—近似圓柱體形狀，並轉合 至旋轉頭110。旋轉驅動部件旋轉支撐部件12〇，且支撐部 件120之轉矩被傳遞至旋轉頭110以旋轉旋轉頭110。在拋 光製程及清絲財，減轉部件提供之轉矩旋轉用 於將晶圓70固定於頂面上之旋轉頭11〇。 基板支撐單元100容置於钵型單元200中。缽型單元 10/42 201117278 200 了包括第一及第二製程砵（卩⑺⑶％ b〇w丨）2]〇及220、 第一及第二回收桶（recovery vat) 230及240、第一及第二 回收官251及25:i、以及一升/降構件26〇。 。具體而言，第一及第二製程钵210及220環繞基板支 撐單το 100，以提供一用以在其中對晶圓7〇執行拋光製程 及^4製耘之空間。第一及第二製程缽21〇及22〇各具有 =開放的上部，旋轉頭u〇透過該開放的上部而露出。儘 g在本具體貫施例中，第一及第二製程缽21〇及各具 有一圓環形狀，然本發明並非僅限於此。 ^ 具體而言，第一製程缽21〇可包括一側壁2U、一頂板 212及一引導部件213。側壁211可具有一近似圓環形狀， 以環繞基板支撐單元1〇〇。 側壁211之一上端連接至頂板212。頂板212自側壁 一 11延伸，並具赛一遠離側壁211向上傾斜之表面。頂板 具有一近似圓環形狀。由平面圖中觀之，頂板212與旋 轉頭110間隔開以環繞旋轉頭11〇。 引導部件213包括第一及第二引導壁21如及213b。第 引導壁213a自側壁211之一内壁突出以面朝頂板212。 此外，第一引導壁213a具有一遠離側壁211向下傾斜之表 面。第一引導壁213a具有一圓環形狀。第二引導壁213b 自第一引導壁21:丨a向下垂直地延伸，以面朝側壁211。第 一引導壁213b具有一圓環形狀。引導部件213引導在晶圓 7〇之拋光製程中散射到第一製程缽21〇之側壁211及頂板 212之内表面上之一製程流體流朝向第一回收桶23〇。 第二製程蛛220設置於第一製程缽21〇外側。第二製 %钵220環繞第一製程体210，且大於第一製程砵21〇。 11/42 201117278 具體而言’第二製程缽220可包括一側壁221及一頂 板222。側壁221可具有一近似圓環形狀，以環繞第一製程 蛛210之側壁211。側壁221係與第一製程缽2】0之側壁 211間隔開’並連接至第-製程蛛210。 側壁221之一上端連接至頂板222。頂板222自側壁 221延伸，並具有一遠離侧壁221向上傾斜之表面。頂板 222具有一近似圓環形狀。由平面圖中觀看，頂板222與旋 轉頭110間隔開，以環繞旋轉頭110。頂板222設置於第一 製紅钵210之頂板211上方。此外，頂板222面朝第一製 私钵210之頂板2U，並與第一製程缽21〇之頂板211間隔 開。 第一及第二回收桶230及240設置於第一及第二製程 缽210及220下方，以回收用於拋光製程及清潔製程之製 程流體。第一及第二回收桶230及24〇各具有一近似圓環 形狀，近似圓環形狀具有一開放的上部。儘管在本具體實 施例中’第-及第二回收桶23〇及24〇各具有圓環形狀， 然而本發明並非僅限於此。 第一回收桶230設置於第一製程砵21〇下方，以回收 用於拋光製程之製程流體。第二回收桶24〇設置於第二製 程缽220下方，以回收用於清潔製程之製程流體。 具體而言，第一回收桶230可包括一底板231、一第一 側壁232、一第二側壁233及一連接部件234。底板231具 有一近似圓環形狀，以環繞支撐部件12〇。在本發明之一實 屹例中，底板231具有一‘V’形垂直橫戴面，以輕易地排放 回收至第-回收桶23G中之製程流體。因此，在底板231 中设置一具有一環形狀之回收流動路徑231&，以輕易地排 12/42 201117278 放及回收製程流體。 第一側壁232自底板231垂直地延伸，以提供用於回 收製程流體之第一回收空間RS1。第二側壁233與第一側 壁232間隔開，以面朝第一側壁232。連接部件234連接至 第一側壁232之上端以及第二側壁233之上端。連接部件 234具有一自第一·側壁232朝第二側壁233向上傾斜之表 面。連接部件234引導滴落於第一回收空間RS1外之製程 流體朝向第一回收空間RS1，以將製程流體引入第一回收 空間RS1。 第二回收桶240設置於第一回收桶230外側。第二回 收桶240環繞第一回收桶230，並與第一回收桶230間隔 開。具體而言，第二回收桶240可包括一底板241、一第一 側壁242及一第二側壁243。底板241具有一近似圓環形 狀’以環繞第一回收桶230之底板23卜在本發明之一實施 例中，底板241具有一‘V’形垂直橫截面，以輕易地排放回 收至第二回收桶240中之製程流體。因此，在底板241中 設置一具有一環形狀之回收流動路徑241a，以輕易地排放 及回收製程流體。 第一及第二側壁242及243自底板241垂直地延伸， 以提供用於回收製程流體之第二回收空間RS2。第一及第 二侧壁242及243各具有一圓環形狀。第一側壁242設置 於第一回收桶230之第一及第二側壁232及233之間，以 環繞第一回收桶230之第一側壁232。第二回收桶240之第 二側壁243面朝第一側壁242且使底板241處於其間，以 環繞第一側壁242。第二回收桶240之第二側壁243環繞第 一回收桶230之第二側壁233，且其一上端設置於第二製程 13/42 201117278 砵220之側壁221外側。 當對晶圓70執行拋光製程及清潔製程時，根據每一製 程而改變旋轉頭1〗〇與第一及第二製程缽210及220間之 垂直位置。因此，第一及第二回收桶230及240分別回收 用於互不相同之製程之製程流體。 具體而言，當執行拋光製程時，旋轉頭110設置於第 一製程缽210内’以對第一製程缽210内之晶圓70執行拋 光製程。在抛光製程中，藉由旋轉頭110之旋轉而旋轉晶 圓70。因此，在拋光製程中，由於晶圓70之轉矩，噴射於 晶圓70上之一製程流體朝向第一製程缽21〇之側壁211之 一内表面及頂板212之一内表面散射。附著於第一製程绰 210之側壁211及頂板212之内表面之製程流體在一重力方 向沿第一製程蛛210之惻壁211及頂板212流動而到達引 導部件213，然後，製程流體在重力方向上沿引導部件213 之一内表面流動並被回收至第一回收桶23〇中。 §在執行抛光製在之後執行清漯製程時，旋轉頭Η〇 設置於第二製程蛛220之頂板222下方以及第一製程钵21〇 上方。在清潔製程中，使旋轉頭]10旋轉。因此，在清潔 製程中喷射於晶圓上之一製程流體朝向第二製程缽22〇之 頂板222及側壁221之内表面以及朝第一製程缽21〇之一 外表面散射。第一製程缽210之側壁21]設置於第二回收 桶240之底板241上方。附著於第一製程钵21〇之外表面 之製程流體在重力方向上沿第一製程绰21G外表面流動， 並被回收至第二回收桶240巾。此外，附著於第二製程绰 220之内表面之製程流體在重力方向上沿第二製程缽之 内表面流動，並被回收至第二回收桶240中。 14/42 201117278 如上文所述，第一回收桶230回收用於拋光製程之製 程流體，第二回收桶240則回收用於清潔製程之製程流體。 如此一來，因绰形單元2〇〇可分別回收在蛛形單元2〇〇内 執行之每一製程所用之製程流體，故可輕易地重新利用及 回收製程流體。 第一回收桶230連接至第一回收管251，第二回收桶 240則連接至第二回收管252。第一回收管251耦合至第一 回收桶230之底板231。連通第一回收管251之第一回收孔 231b界定於第一回收桶23〇之底板231中。回收入第一回 收桶230之第一回收空間RS1中之製程流體透過第一回收 孔231b經第一回收管251向外排放。 儘管在本具體貫施例中，蛛形單元2〇〇包括二製程蛛 210及220與二回收桶230及240 ’然製程蛛210及220與 回收桶230及240之數目可根據拋光製程及清潔製程所用 的製程流體之數目以及欲分別回收之製程流體之數目而增 加。 第一回收管252輕合至第二回收桶240之底板241。連 通第二回收管252之第二回收孔241b界定於第二回收桶 240之底板241中。回收入第二回收桶240之第二回收空間 RS2中之製程流體透過第二回收孔241b經第二回收管252 向外排放。 儘管第一回收管251及第二回收管252分別以單數形 式提供，然第一回收管251及第二回收管252之數目可根 據第一及弟二回收桶230及240之尺寸及回收效率而增加。 可垂直移動之升/降構件260設置於第二製程缽220外 侧。升/降構件260耦合至第二製程缽220之側壁221，以 .15/42 201117278 調整第一及第二製程绰2i〇及220之垂直位置。具體而言， 升/降構件260可包括一托架261、一運動軸262及一驅動 益263。把架261固定至第二製程绰220之外側壁221，並 柄合至運動軸262。運動軸262連接至驅動器263並藉由驅 動器263而垂直移動。 第一及第二製程蛛210及220藉由升/降構件260而下 降，以在晶圓70安放於旋轉頭no上或被提離旋轉頭11〇 時容許旋轉頭110自第一及第二製程钵2]〇及22〇向上突 出。當第一及第二製程缽210及22〇下降時，第一回收桶 之第一及第二側壁232及233與連接部件234被插入由 第一製程缽2]〇之側壁211以及第一及第二引導壁213a及 2 i 3b所界定之一空間中。 此外，當對晶圓10執行拋光製程及清潔製程時，第一 及第一衣辁钵210及220藉由升/降構件260而升降，以調 主第及第二製程钵210及220與旋轉頭11〇間之一相對 垂直位置，藉此分別回收拋光製程所用之製程流體與清潔 製程所用之製程流體。 在本具體實施例中，儘管係垂直移動第一及第二製程 缽210及220來改變基板拋光單元1〇〇〇中之第一及第二製 柽绰210及220與旋轉頭間之相對垂直位置，然本發 明並非僅限於此。舉例而言，可垂直移動旋轉頭】1〇來改 變第一及第二製程缽210及220與旋轉頭110間之相對垂 直位置。 拋光單元300、第一及第二製程流體供應單元51〇及 520、刷子單元6U)、噴霧單元62〇及墊調節單元設置 於缽形單元200之外側。 16/42 201117278 拋光單元300對固定至基板支撐單元1〇〇之晶圓7〇之 一表面進行化學及機械拋光，以平坦化晶圓7〇之表面。 圖4為圖2所示之一拋光單元之一立體圖，及圖5為 圖4所示拋光單元之一局部剖切側視圖。 參見圖3、圖4及圖5 ’拋光單元3〇〇可包括一按壓部 件310、一垂直臂部件32〇、一擺動臂部件33〇及一驅 件 340。 —具體而言，在拋光製程中，按壓部件3]〇設置於固定 轉頭10之晶圓7〇上方。按壓部件31〇以盘晶圓7 態旋轉，以拋光晶圓70。在按壓部件谓抛光晶 =曰二:供應用於晶圓70之化學液體（即漿液(s—)) 於日日圓70之了員面。 部件^ =件32°蚊至按壓部件則之上端。垂直臂 3°40所提供^轉頭】1〇之頂面垂直延伸’並藉由驅動部件 @ d、， 轉矩而繞一縱向中心軸線旋轉。以下，將朱昭 圖6:細閣述按壓部件310及垂直臂部件320之配置。… #部件330設置於垂直臂部件320上方。擺動f 部件330可命k 揭 二匕括一旋轉殼體33卜旋轉殼體331具有一棒形 件34^皮帶/皮帶輪總成，該皮帶-皮帶輪總成用於自驅動部 向垂直臂部件320傳遞轉矩。旋轉殼體3 耦合至垂首昝&, 训 。 件320 ,且另一側則耦合至驅動部件34〇。 驅動部件祕可包括：第一驅動馬達％ 動臂部件330,咕 、 U，—第二驅動馬達342,用於旋轉垂直臂部件 j 2 U , 及-—~^r , 变直運動部件343，用於調整按壓部件31〇之 一垂直位置。 一驅動馬達341耦合至旋轉殼體331，以提供轉矩給 17/42 201117278 方疋K 胆_ 331。第—驅動馬達341可交替、重複地提供順時 針轉矩及料針轉矩。因此’驅動部件使鶴臂部件 330以耦合至驅動部件34〇之一中心軸線為中心擺動。當執 行拋光製程時，由於擺動臂部件33〇之擺動操作，按壓部 件310可在晶圓7〇之一上部以一圓弧形狀水平地往復運 動。 第二驅動馬達342設置於第一驅動馬達341下方。第 二驅動馬達342提供轉矩給皮帶·皮帶輪總成。皮帶_皮帶輪 總成將第二驅動馬達342之轉矩傳遞至垂直臂部件32〇。皮 帶-皮帶輪總成係内建於旋轉殼體331中，並可包括一主動 皮帶輪332、一從動皮帶輪333及一皮帶334。主動皮帶輪 332設置於第一驅動馬達341上方，並耦合至一穿過第一驅 動馬達341之垂直臂344之一侧。第二驅動馬達342耦合 至垂直臂344之另一側。 «動皮輪333面朝主動皮帶輪332。從動皮帶輪333 設置於垂直臂部件320上方，並耦合至垂直臂部件32〇。主 動皮帶輪332與從動皮帶輪333透過皮帶334相互連接。 皮帶334纏繞主動皮帶輪332與從動皮帶輪333。 第二驅動馬達342之轉矩透過垂直臂344傳遞至主動 皮帶輪332。藉此，使主動皮帶輪332旋轉。主動皮帶輪 332之轉矩透過皮帶334傳遞至從動皮帶輪333。藉此，使 從動皮帶輪333旋轉。從動皮帶輪333之轉矩傳遞至垂直 臂部件320。藉此，使按壓部件310及垂直臂部件320旋轉。 垂直運動部件343設置於第一驅動馬達341及第二驅 動馬達342之一後側。垂直運動部件343可包括—滾珠螺 桿（ball screw)343a、一螺母343b及一第三驅動馬達343e。 18/42 201117278 滾珠螺桿343a具有一桿形狀’並相對於一地面垂直設置。 螺母343b安裝於滾珠螺桿343a上，並固定至第二驅動馬 達342。第三驅動馬達343c設置於滚珠螺桿343a下方。第 二驅動馬達343c可耦合至滾珠螺桿343a，以提供順時針轉 矩及逆時針轉矩給滾珠螺桿343a。第三驅動馬達34允使滾 珠螺桿343a順時針或逆時針旋轉。滚珠螺桿343a之旋轉 使螺母343b沿滾珠螺桿343a垂直移動。藉此，使耦合至 螺母343b之第二驅動馬達342與螺母343b —起垂直移動。 fk著第一.驅動馬達342垂直地移動，第一驅動馬達341及 擺動臂部件330垂直地移動，藉此使垂直臂部件32〇及按 壓部件310亦垂直地移動。 儘管在本具體貫施例中，垂直運動部件343包括滾珠 螺桿343a、螺母343b及第三驅動馬達343c以利用一線性 馬達方法提供一垂直運動力，然本發明並非僅限於此。舉 例而言，垂直運動部件343可包括一汽缸來提供一垂直運 動力。 第一驅動馬達341、第二驅動馬達342、滾珠螺桿343a、 螺母343b及垂直臂344係内建於一驅動殼體345中。驅動 殼體345沿一垂直方向具有一長桿形狀。 以下，將參照附圖詳細闡述按壓部件31〇及垂直臂部 件 320 〇 ° 圖6為圖5所示之一按壓部件及一垂直臂部件之一垂 直剖視圖。 參見圖2、圖5及圖6’垂直臂部件32〇由驅動部件34〇 所傳遞之轉矩帶動旋轉’以使按壓部件31〇旋轉，且垂直 臂部件32〇提供空氣給按壓部件_，以控制用於按壓晶圓 19/42 201117278 70之壓力。 具體而言’垂直臂部件320可包括—外殼32丨、一旋轉 軸322、一旋轉接頭323、第一及第二軸承K4a及324b、 以及第一及第二輔助轴325a及325b。 外殼321具有一近似圓柱形管形狀。外殼321之一上 端插入擺動臂部件330之旋轉殼體331中。因此，外殼321 具有搞合至旋轉殼體331之上端以及一輕合至按壓部件31〇 之下端。 旋轉軸322設置於外殼321内，並與外殼321間隔開。 旋轉軸322沿外殼321之縱向方向延伸，並於一中央部中 包括一空氣通道322a。空氣通道322a沿旋轉軸.322之縱向 方向延伸。旋轉軸322連接至從動皮帶輪333，並在從動皮 帶輪333之轉矩作用下繞一縱向中心轴線旋轉。旋轉軸322 之上端耦合至旋轉接頭323’旋轉接頭323供應空氣至旋轉 轴322之空氣通道322a並固定至從動皮帶輪333。旋轉接 頭323包括一旋轉部及一固定部，且旋轉部固定至從動皮 帶輪333 ’使得旋轉部在從動皮帶輪333之轉矩作用下旋 轉。旋轉接頭323之固定部連接至一用於供應空氣之空氣 管線80。自空氣管線80供應之空氣透過旋轉接頭323被引 入至空氣通道322a，並沿空氣通道322a流至按壓部件310。 第一及第二軸承324a及324b設置於外殼321與旋轉 轴322之間。第一及第二軸承324a及324b將外殼321連 接至旋轉軸322並支撐旋轉軸322，使得旋轉軸322穩定地 旋轉。第一軸承324a與擺動臂部件330毗連設置，第二軸 承324b則與按壓部件31〇毗連設置。第一及第二軸承324a 及324b之内圈（jnner race)安裝於旋轉軸322上，並進而 20/42 201117278 與旋轉軸322 —同旋轉。第一及第二軸承324a及324b之 外圈耦合至外殼321，進而在旋轉軸旋轉時並不旋轉。因 此，僅旋轉軸322旋轉，而外殼321則不旋轉。 第一及第二輔助軸325a及325b可設置於旋轉軸322 與外殼321之間。第一輔助軸325a沿外殼321之内壁設置’ 並保護外殼321。第二輔助軸325b環繞旋轉軸322之一外 壁，並保護旋轉軸322。 按壓部件310固定至旋轉軸322之下端。按壓部件310 可包括一拋光墊31卜一拋光殼體312、一上板313及一下 板314、一墊支架315、一耦合板316及一波紋管（bellows) 317。 拋光墊311具有一板形狀及一近似圓環形狀。在拋光 製程中，拋光墊311旋轉，進而以拋光墊311之一底面接 觸晶圓之一頂面之狀態來拋光晶圓。拋光墊311之一直徑 小於晶圓之一直徑。在拋光製程中，驅動部件340使拋光 墊311擺動而拋光晶圓。如上文所述，因拋光墊311之一 直徑小於晶圓之一直徑’故拋光單元300可局部地拋光晶 圓，並防止過度地拋光一特定區域。 拋光殼體312設置於拋光墊311上方。拋光殼體312 具有一近似圓環形狀，且其中包括上板313及下板314以 及波紋管317。一耦合孔設置於拋光殼體312之中央頂面 中，且耦合板316設置於耦合孔中。耦合板316與拋光殼 體312間隔開’並固定至垂直臂部件32〇之旋轉軸322。 上板313固定至耦合板316之底面，且下板314與上 板313間隔開。墊支架315耦合至下板314之底面’且拋 光墊311耦合至墊支架315之底面。 21/42 201117278 波紋管3Π設置於下板3M與上板313間之—空 波紋管317係由-金屬材料形成，並容置由旋轉轴工 空氣通道遍供應之空氣。波紋管317藉由空氣壓力二 直地膨脹及收縮。當執行拋光製程時，波紋管3丨7藉= 氣虔力而垂直地膨脹，使得拋光塾311緊密地接觸^空 當波紋管317在基板支撐單元1〇〇(參見圖2)上方 =管317藉由空氣通道322a所提供之真驾力而收^’ 稭^使拋光# 3U與安放於基板支撐單幻〇 — 圓間隔開。 乏—日日 如上文所述，因按壓部件31〇使 :及收縮之波紋管317,故在蝴程中: 據晶圓之頂面形狀而傾斜。 了根 再次參見圖1至圖3,墊支撐構件 $ 單元H)0之—側，日埶牙齡4〇1叹1於基板支撐 中。，〜η 7 構件設置於_單元· 田也疋日日圓70之一邊緣時，墊支撐構 墊31】之-部分（夫 〗登叉研則’40!支撐拋光 圓7〇之外側。以防止抛光塾311傾斜至晶 件401之配置。#蒼知圖7及圖8詳細闡述墊支撐構 設置於緣形單元2〇〇 應單元510及 卜側之弟及弟二製程流體供 製程流體料至之拋光製程及清潔製程所需之 之，第-制板支擇單元100之晶圓70。詳言 側壁22卜衣當王執= 供應單元510固定至第二製程绰,之 應單喷頭公製程流體供 上，以處理曰圓7n L體至固疋於㈣頭110之晶圓70 供應單元51曰〇日如。在本具體實施例中，自第—製程流體 喷射之製程流體可為用於清潔或乾燥晶圓7〇 22/42 201117278 之製程流體或由於乾燥晶圓7Q之乾燥氣體。 在本發明之一實施例中，儘答 sin + 慍&弟一製程流體供應單元 =包括四個_喷嘴，喷射噴嘴之數目可根據用於清潔 日日囫70之製程流體之數目而增減。 、 ，二製程流體供應單元52〇可擺動，並噴射製程流體 =疋於旋轉頭1H)之晶圓7〇上。供應至第二製程流體供 應早几520之製錢體可係輕液。在拋絲程中，裝液 I藉由-分立之化學液體喷射構件（圖未示幻而非藉由 第一製程流體供應單元520喷射至晶圓7〇。 在執行拋光製程後，刷子單元61〇以物理方式移除存 f於晶圓70表面上之異物。刷子單元61〇可擺動，並包括 一刷子墊（brush pad)。刷子墊接觸晶圓7〇之表面，而以 物理方式刷除存留於晶B17G表面上之異物。當執行清潔製 耘時，刷子單元610藉由其擺動操作而將刷子墊置於旋轉 頭110上方，並旋轉刷子墊以清潔固定於旋轉頭11〇之晶 圓 70。 、 m 霧早元620設置於刷子單元610之一側。喷霧單元 620以一高壓喷射具有細小顆粒之製程液體至固定於旋轉 頭11〇之晶圓70上，以移除存留於晶圓70表面上之異物。 舉例而言，喷霧單元620利用超聲波（supersonicwave)喷 射呈細小顆粒形式之製程液體。刷子單元610用於移除具 有相對大顆粒之異物’喷霧單元620則用於移除具有相對 小顆粒之異物。 當抛光單元300以一待用狀態（standby state)設置於 一本籍埠（home port)内時，墊調節單元700對拋光單元 30〇進行清潔及循環利用。亦即，形成一預定拋光圖案於拋 23/42 201117278 311 (參見圖6)之與晶圓接觸之表面上，以提高拋光 衣放率。在對晶圓執行拋光製程時，該拋光圖案可能 □曰a圓之摩私而逐漸磨損。此外，抛光製程所用之化學液 脱可表δ亥抛光圖案内硬化。墊調節單元7〇〇可拋光拋光墊 311之表面’以循環利用拋光墊311。 以下，將參照附圖詳細闡述墊支撐構件401之一配置。 圖7為圖3所示墊支撐構件之一立體圖。圖8為圖7 所不塾支樓構件、—基板支樓單元與-拋光單元間之相對 位置之一示意圖。 。麥見圖2、圖7及圖8，墊支撐構件4〇]設置於基板支 撐^70 100之—側，並與基板支擇單it ]00間隔開。當拋 光晶圓/〇之一邊緣時，墊支撐構件4〇1局部地支撐拋光墊 ⑷不接觸日曰圓70之-抛光表面，以防止椒光墊31]傾斜 至晶圓70之外側。 詳言之，墊支撐構件401可包括一支撐體4i〇及一墊 牛420支樓體4】〇固定至蛛形單元之底面Μ】，並 具有一柱形狀，該柱形狀自底面231延伸至缽形單元2〇〇 之頂面。 塾部件420固定至支撐體41〇之上端，且鄰接旋轉頭 110墊。(Η牛420 ϋ與旋轉頭1】〇間隔開，並在拋光晶圓 之一邊緣時支撐拋光塾311之一部分。 塾部件420可包括：一_合體42卜固定至支擇體41〇 ; -支樓板422 ’轉合至麵合體421之頂面；以及—支擇塾 424 ’用於在抱光晶圓％之一邊緣時支撐抛光墊川之一 部分。麵合體42】係藉由第一螺釘43〇可移除地轉合至支 撑體4】0，並具有-柱形狀。支撐板似係藉由第二螺釘 24/42 201117278 423可移除地麵合至耗合體421 ’並具有被支撐·塾424覆蓋 之頂面及側面。 支撐墊424係由合成樹脂製成，並在拋光晶圓70之一 邊緣時，支撐拋光墊311之暴露於晶圓70外側而未接觸晶 圓70之一部分。舉例而言，支撐墊424具有一圓形頂面， 且其一面積小於抛光塾311之一面積。 由側面觀之，支撐墊424之頂面與晶圓70之頂面位於 同一條線上。亦即，支撐墊424之頂面與固定至旋轉頭11〇 之晶圓70之頂面具有相同之高度。支撐塾424設置於拋光 墊311之一運動執道上或其一延伸線上。亦即，支撐塾424 設置於拋光墊311在其擺動操作期間可移動經過之運動路 徑上。舉例而言”拋光墊311之半徑係等於或小於支撐墊 424與旋轉頭110間之距離與支撐墊424之寬度之和。因 此，支撐墊424可穩定地支撐拋光墊311。 由此，當抛光晶圓70之一邊緣時，旋轉頭no及支撐 墊424穩定地支標拋光墊31卜藉此防止抛光塾311傾斜至 晶圓70之外側。因此’當拋光晶圓70之一邊緣時，基板 拋光單元1000可防止因拋光墊311傾斜而使晶圓7〇之邊 緣破碎及出現拋光缺陷，並可提高產品良率（pr〇duct yield)。 因在拋光晶圓70之一邊緣時，支撐墊424及旋轉頭no 支撐拋光墊311，故抛光墊311會磨損支撐墊424之頂面。 當支撐墊424過度磨損時’支撐墊424之頂面甚至會低於 晶圓70之頂面。如此一來，即便在拋光晶圓7〇之一邊緣 時支撐墊424支撐拋光墊311 ’拋光墊311亦可能會傾斜至 晶圓70之外侧。為防止抛光塾311傾斜，需更換支撐塾 25/42201117278 VI. Description of the Invention: [Technical Field] The present invention relates to an apparatus and method for fabricating a semiconductor, and more particularly to a method for polishing and cleaning a semiconductor substrate in a single wafer processing manner. Substrate processing apparatus and method. [Prior Art] In a general semiconductor device manufacturing process, a plurality of unit processes such as a deposition process, a photolithography process, and an etch process are repeatedly performed to form and stack a thin film. This process is repeated until a desired predetermined circuit pattern is formed on a wafer. After the circuit pattern is formed, a plurality of irregularities are formed on one surface of the wafer. Since the semiconductor device has been highly integrated and opened in a multi-layered structure, the number of irregularities on the surface of the wafer and the height difference of the irregularities are increased. As a result, defocusing may occur in the lithography process because the wafer surface is not flat. Therefore, in order to achieve planarization of the wafer surface, the wafer surface should be periodically polished. Various surface planarization techniques have been developed to planarize the surface of a wafer. In this specialty, 'chemicai mechanicai Polishing (CMP) technology is widely used' because of the flat surface and narrow surface flattened to better flatness by CMp technology. The CMP apparatus is used to polish the surface of a wafer coated with tungsten or oxide using mechanical friction and chemical abrasive, and a very fine polishing can be achieved by using a CMP apparatus. When a polishing apparatus polishes a wafer, the polishing apparatus places the wafer on the top surface of a polishing pad' and then presses and rotates the wafer against the polishing pad. The polishing device includes a retainer ring that surrounds the wafer at 5/42 201117278 to prevent over-polishing of one of the edges of the wafer. However, since the expensive retaining ring is polished together with the wafer throughout the wafer polishing process, the replacement cycle of the fixed ring is short and the disassembly process is complicated. SUMMARY OF THE INVENTION A specific embodiment of the present invention provides a substrate polishing apparatus which can improve polishing efficiency. A specific embodiment of the present invention also provides a method of polishing a substrate using the aforementioned substrate polishing apparatus. A specific embodiment of the present invention provides a substrate polishing apparatus comprising: a substrate supporting member, a polishing unit, and at least one pad supporting member. A substrate is placed on the substrate support member. The polishing unit comprises a polishing pad and a pad driving member, the polishing pad is disposed above the substrate supporting member to polish the substrate placed on the wire branch member, and the pad member is used to move the polishing pad to change the polishing pad relative to the substrate The relative position of the rhyme. The crucible support member is disposed on the side of the base-retaining member such that a polished surface does not contact a portion of the substrate when polishing the edge of the substrate on the substrate support member. In other embodiments of the invention, the substrate polishing apparatus comprises: a spider unit, a rotatable substrate support member, a polishing unit, and at least one pad support member. The $-type single has an upper part of the one. An upper plate is supported on the substrate supporting member, and the substrate supporting member is rotatable in the positioning unit. The polishing pad and the 塾 driving member' polishing pad are disposed above the second ox to polish the slab placed on the substrate support during the polishing process. 塾 The driving member is used to throw the edge region or one of the substrates on the floor member. The central area moves to the base of the 6/42 201117278 and moves to a position beyond the edge area of the substrate. The pad supporting member is disposed on the 单元-shaped unit towel and includes a support, and the support substrate is spaced apart from each other and disposed on one side of the substrate supporting member. In still other embodiments of the invention, the substrate polishing method is as follows. A substrate is placed on a substrate supporting member. A polishing pad is placed over the substrate support member. When at least one of the substrate supporting member and the polishing pad is rotated, the substrate is pressed and polished with the polishing pad. When the substrate is polished, one of the edges of the substrate is polished while the support member supports the polishing pad without contacting a portion of the substrate. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be limited to the specific embodiments described herein. The Detailed Description of the Invention The present invention is intended to be thorough and complete and to fully convey the scope of the invention. For example, although a crystal circle is used as a semiconductor substrate, the technical scope and spirit of the present invention are not limited thereto. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of one of a single wafer type polishing system in accordance with one embodiment of the present invention. Referring to FIG. 1, a substrate processing system 2 according to the present invention may include a loading/unloading unit 10, a palletizing robot (index r〇b〇t) 2〇, a buffer unit 30' - a main conveying mechanism The hand 50, a plurality of substrate polishing units 1 and a control unit 60. The load/unload unit ίο includes a plurality of loads 埠 ila, llb, llc, and Ud. Although in the present embodiment, the loading/unloading unit 1 includes four 7/42 201117278 loadings 埠lla, lib, lie and lid, the number of loading la]la, ub, and lid may also be based on process efficiency and The substrate processing system 2 increases or decreases in the foot print state. The open standard unified standard box (fr〇m such as unifiedpod · 'F〇UP), 12b, 12c and 12d are placed on the loading #lla, 11b, 11c and lid respectively. A plurality of slots (sl〇t) are disposed in the respective FOUPs 12a, 12b, 12c, and 12d for accommodating the wafer in a horizontal direction with respect to the ground. The F0UPs 12a, 12b, 仏, and (3) accommodate wafers that have been processed in respective substrate filament units or wafers that will be loaded into the respective substrate polishing units. Hereinafter, for convenience of explanation, the wafers that have been processed in the respective substrate removing units 1_ are referred to as processed wafers, and the wafers that have not been processed are referred to as original wafers. . A first-transmission path 41 is disposed between the load and the buffer. - The first transmission channel 42 is exempt from the first transmission path (4). The hand 2 is set on the first transmission channel 42. Code Green Manipulator 2〇 :η行道42 moves 'for loading/unloading unit (1) and buffering single-generation wafers. That is, the touch robot 2g is taken from the loading/distributing elements 123, 1213, 仏 and (3) at least -= 曰 from the two loading wafers on the buffer unit 3〇. In addition, the palletizer 曰曰η at least 1 buffered early & 3G takes out at least one processed wafer to load =; female on the loading/unloading unit 1〇F〇up. The η and 12d unit 3G are disposed on the side of the first transmission path 41. The buffer single light == the original of the two transmissions _ and the substrate is thrown exclusively. [The robot 50 is disposed in a second transmission path 43. - 8/42 201117278 The second transmission path 44 is disposed in the second transmission path 43. The main transfer robot 50 is disposed on the second transfer rail 44. The main transfer robot % moves along the second transfer path 44 to transfer the wafer between the buffer unit 30 and the substrate polishing unit 1A. That is, the main transfer robot 5G takes out at least one original wafer from the buffer unit 30 to provide wafer-to-substrate polishing. The main transfer machine then loads the wafer processed by the substrate polishing unit 1 (i.e., the processed wafer) onto the buffer unit 30. The substrate polishing unit faces are disposed on both sides of the second transfer path 43. The individual substrate throwing elements polish and clean the original wafer to produce a processed wafer. In the substrate polishing unit face, at least two substrate polishing units face each other with the second transfer path 43 therebetween. In an embodiment of the present invention, 'the plan view is taken, although the two pairs of substrate polishing unit faces are disposed on both sides of the second transfer path 43 and are respectively arbitrarily parallel along the second transfer path δ. The number of the substrate polishing units (1) (9) on both sides of the second transfer path 43 can be increased or decreased according to the process efficiency and the occupied area state of the substrate processing system 2_. . . A substrate polishing unit 1000 is coupled to the control unit 6A to polish and clean the original wafer in accordance with the control of the control unit 60. That is, the control unit (6) controls the substrate polishing unit surface to control the polishing of the polishing unit surface of each substrate. Hereinafter, one configuration of the substrate polishing unit 1000 will be described in detail with reference to the drawings. 2 is a perspective view of one of the substrate polishing units of FIG. 1 , and FIG. 3 is a partially cutaway perspective view of the substrate holder and the spider unit of FIG. 2 . Referring to Figures 1 to 3, in the substrate processing system 2, a polishing process can be sequentially performed in a 9/42 201117278 substrate polishing unit 1000 and a cleaning process can be performed after the polishing process. The process polishes one of the top surfaces of a wafer 70. The cleaning process cleans one surface of the wafer 70. Specifically, the substrate polishing unit 1000 may include a substrate supporting unit 100, a unit 200, a polishing unit 300, a pad supporting member 4 (U, first and second process fluid supply units 510 and 520, and a brush). The unit 610, an aerosol unit 020 and a pad conditioning unit 700. The wafer 70 transferred by the main transfer robot 50 is placed on the substrate supporting unit 100. The polishing process on the wafer 70 And the cleaning process, the substrate supporting unit 100 supports and fixes the wafer 7〇. The substrate supporting unit 〇〇 can include one of the rotating heads (叩匕heacj) 丨1〇, one for the female wafer 7 a support member for supporting the rotary head 110 and a rotary drive member for supplying torque. The rotary head 11〇 viewed in a plan view has a substantially circular shape, and a width thereof is gradually reduced from a top surface to a bottom surface thereof. In one example of the present invention, the area of one of the top surfaces of the rotating head 11〇 supporting the wafer 7 is smaller than the area of one of the wafers 70. Therefore, from the side view, it is placed on the rotating head ιι One end of the wafer 70 is self-rotating One of the top ends protrudes outwardly. The branch member 120 is disposed below the spinner 11G and is coupled to the rotary drive member. The cut member 12Q has an approximately cylindrical shape and is coupled to the rotary head 110. The rotary drive member is rotatably supported The component 12 is rotated, and the torque of the support member 120 is transmitted to the rotary head 110 to rotate the rotary head 110. In the polishing process and the cleaning process, the torque rotation provided by the reduction member is used to fix the wafer 70 to the top surface. The rotating head 11 。 The substrate supporting unit 100 is housed in the 钵 type unit 200. The 单元 type unit 10/42 201117278 200 includes the first and second processes 砵 (卩(7)(3)% b〇w丨) 2] 〇 and 220 First and second recovery vats 230 and 240, first and second recycling officers 251 and 25: i, and one liter/lower member 26 〇. Specifically, the first and second processes 钵210 and 220 support a single το 100 around the substrate to provide a space for performing a polishing process and a process for the wafer 7 。. The first and second processes 钵 21 〇 and 22 〇 each have an open state. In the upper part, the rotating head u〇 is exposed through the open upper part. In the embodiment, the first and second processes 钵21〇 and each have a ring shape, but the invention is not limited thereto. ^ Specifically, the first process 钵21〇 may include a side wall 2U, a top plate 212 and a guiding member 213. The side wall 211 may have an approximately circular shape to surround the substrate supporting unit 1 . One of the upper ends of the side wall 211 is connected to the top plate 212. The top plate 212 extends from the side wall 11 and has a side away from the side wall. The surface of the 211 is inclined upwards. The top plate has an approximately circular shape. Viewed from the plan view, the top plate 212 is spaced from the rotating head 110 to surround the rotating head 11A. The guiding member 213 includes first and second guiding walls 21 such as and 213b. The first guide wall 213a protrudes from the inner wall of one of the side walls 211 to face the top plate 212. Further, the first guide wall 213a has a surface which is inclined downward from the side wall 211. The first guide wall 213a has a circular ring shape. The second guide wall 213b extends vertically downward from the first guide wall 21: 丨a to face the side wall 211. The first guide wall 213b has a circular ring shape. The guiding member 213 guides a flow of the process fluid scattered on the inner surface of the sidewall 211 of the first process 钵 21 及 and the top plate 212 in the polishing process of the wafer 7 toward the first recovery tank 23 〇. The second process spider 220 is disposed outside the first process 钵21〇. The second system % 钵 220 surrounds the first process body 210 and is larger than the first process 砵 21 〇. 11/42 201117278 Specifically, the second process cartridge 220 can include a sidewall 221 and a top plate 222. The side wall 221 may have an approximately circular shape to surround the side wall 211 of the first process spider 210. The side wall 221 is spaced apart from the side wall 211 of the first process 并2] and is coupled to the first process spider 210. One of the upper ends of the side walls 221 is connected to the top plate 222. The top plate 222 extends from the side wall 221 and has a surface that slopes upward away from the side wall 221 . The top plate 222 has an approximately circular shape. The top plate 222 is spaced from the rotating head 110 to surround the rotating head 110 as viewed in plan view. The top plate 222 is disposed above the top plate 211 of the first red bowl 210. Further, the top plate 222 faces the top plate 2U of the first manufacturing pocket 210 and is spaced apart from the top plate 211 of the first process 钵 21〇. First and second recovery bins 230 and 240 are disposed below the first and second process cartridges 210 and 220 to recover process fluid for the polishing process and the cleaning process. The first and second recovery bins 230 and 24 each have an approximately circular shape, and the approximately annular shape has an open upper portion. Although the first and second recovery tubs 23A and 24' each have a circular ring shape in the present embodiment, the present invention is not limited thereto. The first recovery tank 230 is disposed below the first process 砵 21〇 to recover the process fluid for the polishing process. A second recovery tank 24 is disposed below the second process crucible 220 to recover process fluid for the cleaning process. Specifically, the first recovery bin 230 may include a bottom plate 231, a first side wall 232, a second side wall 233, and a connecting member 234. The bottom plate 231 has an approximately circular shape to surround the support member 12A. In an embodiment of the present invention, the bottom plate 231 has a 'V'-shaped vertical cross-face to easily discharge the process fluid recovered into the first-recovery tank 23G. Therefore, a recovery flow path 231 & having a ring shape is provided in the bottom plate 231 to easily discharge and recycle the process fluid. The first side wall 232 extends perpendicularly from the bottom plate 231 to provide a first recovery space RS1 for recycling process fluid. The second side wall 233 is spaced apart from the first side wall 232 to face the first side wall 232. The connecting member 234 is coupled to the upper end of the first side wall 232 and the upper end of the second side wall 233. The connecting member 234 has a surface that is inclined upward from the first side wall 232 toward the second side wall 233. The connecting member 234 directs the process fluid dripping outside the first recovery space RS1 toward the first recovery space RS1 to introduce the process fluid into the first recovery space RS1. The second recovery tub 240 is disposed outside the first recovery tub 230 . The second recovery tub 240 surrounds the first recycling tub 230 and is spaced apart from the first recycling tub 230. Specifically, the second recovery bin 240 can include a bottom plate 241, a first sidewall 242, and a second sidewall 243. The bottom plate 241 has an approximately annular shape 'to surround the bottom plate 23 of the first recovery bin 230. In one embodiment of the invention, the bottom plate 241 has a 'V' shaped vertical cross section for easy discharge recovery to the second recovery. Process fluid in the barrel 240. Therefore, a recovery flow path 241a having a ring shape is disposed in the bottom plate 241 to easily discharge and recover the process fluid. The first and second side walls 242 and 243 extend perpendicularly from the bottom plate 241 to provide a second recovery space RS2 for recycling process fluid. The first and second side walls 242 and 243 each have a circular ring shape. The first sidewall 242 is disposed between the first and second sidewalls 232 and 233 of the first recovery bin 230 to surround the first sidewall 232 of the first recovery bin 230. The second side wall 243 of the second recovery tub 240 faces the first side wall 242 with the bottom plate 241 therebetween to surround the first side wall 242. The second side wall 243 of the second recovery tank 240 surrounds the second side wall 233 of the first recovery tank 230, and an upper end thereof is disposed outside the side wall 221 of the second process 13/42 201117278 砵220. When the polishing process and the cleaning process are performed on the wafer 70, the vertical position between the rotary head 1 and the first and second processes 钵210 and 220 is changed according to each process. Therefore, the first and second recovery bins 230 and 240 respectively recover process fluids for processes different from each other. Specifically, when the polishing process is performed, the spin head 110 is disposed within the first process 210 to perform a polishing process on the wafer 70 in the first process 210. In the polishing process, the wafer 70 is rotated by the rotation of the rotary head 110. Therefore, in the polishing process, one of the process fluids ejected onto the wafer 70 is scattered toward an inner surface of the sidewall 211 of the first process 〇 21 及 and an inner surface of the top plate 212 due to the torque of the wafer 70. The process fluid attached to the inner surface of the side wall 211 of the first process crucible 210 and the inner surface of the top plate 212 flows along the crucible wall 211 and the top plate 212 of the first process spider 210 in a gravity direction to reach the guiding member 213, and then the process fluid is in the direction of gravity The upper surface of one of the upper guiding members 213 flows and is recovered into the first recovery tub 23A. § When the cleaning process is performed after the polishing process is performed, the rotary head 设置 is disposed under the top plate 222 of the second process spider 220 and above the first process 钵 21〇. In the cleaning process, the rotary head] 10 is rotated. Therefore, one of the process fluids ejected onto the wafer in the cleaning process is directed toward the inner surfaces of the top plate 222 and the side walls 221 of the second process 22 and toward the outer surface of the first process 钵 21 。. The side wall 21 of the first process cartridge 210 is disposed above the bottom plate 241 of the second recovery tub 240. The process fluid attached to the outer surface of the first process 钵21〇 flows along the outer surface of the first process 绰21G in the direction of gravity, and is recovered to the second recovery drum 240. Further, the process fluid attached to the inner surface of the second process crucible 220 flows along the inner surface of the second process crucible in the direction of gravity and is recovered into the second recovery tub 240. 14/42 201117278 As described above, the first recovery bin 230 recovers the process fluid for the polishing process, and the second recovery bin 240 recovers the process fluid for the cleaning process. In this way, since the dome unit 2 can separately recover the process fluid used in each process performed in the arachnoid unit 2, the process fluid can be easily reused and recovered. The first recovery tank 230 is connected to the first recovery pipe 251, and the second recovery drum 240 is connected to the second recovery pipe 252. The first recovery pipe 251 is coupled to the bottom plate 231 of the first recovery bin 230. The first recovery hole 231b that communicates with the first recovery pipe 251 is defined in the bottom plate 231 of the first recovery tank 23A. The process fluid in the first recovery space RS1 of the first recovery bin 230 is discharged to the outside through the first recovery pipe 251 through the first recovery hole 231b. Although in this embodiment, the arachnoid unit 2 includes two process spiders 210 and 220 and two recovery barrels 230 and 240. The number of the process spiders 210 and 220 and the recovery bins 230 and 240 can be adjusted according to the polishing process and cleaning. The number of process fluids used in the process and the number of process fluids to be separately recovered are increased. The first recovery pipe 252 is lightly coupled to the bottom plate 241 of the second recovery drum 240. The second recovery hole 241b of the second recovery pipe 252 is defined in the bottom plate 241 of the second recovery tank 240. The process fluid in the second recovery space RS2 of the second recovery tank 240 is discharged to the outside through the second recovery pipe 252 through the second recovery hole 241b. Although the first recovery pipe 251 and the second recovery pipe 252 are respectively provided in the singular form, the number of the first recovery pipe 251 and the second recovery pipe 252 may be based on the size and recovery efficiency of the first and second recovery bins 230 and 240. increase. The vertically movable lifting/lowering member 260 is disposed outside the second process port 220. The up/down member 260 is coupled to the sidewall 221 of the second process port 220 to . 15/42 201117278 Adjust the vertical position of the first and second processes 绰2i〇 and 220. In particular, the ascending/descending member 260 can include a bracket 261, a motion axis 262, and a drive benefit 263. The frame 261 is fixed to the outer side wall 221 of the second process crucible 220 and shanked to the moving shaft 262. The motion axis 262 is coupled to the driver 263 and vertically moved by the driver 263. The first and second process spiders 210 and 220 are lowered by the raising/lowering member 260 to allow the rotating head 110 to be self-contained from the first and second when the wafer 70 is placed on the rotating head no or lifted off the rotating head 11 The process 钵 2] 〇 and 22 〇 protrude upward. When the first and second process cartridges 210 and 22 are lowered, the first and second sidewalls 232 and 233 of the first recovery bin and the connecting member 234 are inserted into the sidewall 211 of the first process and the first and The second guiding walls 213a and 2 i 3b are defined in one of the spaces. In addition, when the polishing process and the cleaning process are performed on the wafer 10, the first and first clothes 210 and 220 are lifted and lowered by the raising/lowering member 260 to adjust the main and second processes 210 and 220 and rotate. One of the heads 11 is relatively vertical, thereby separately recovering the process fluid used in the polishing process and the process fluid used in the cleaning process. In the present embodiment, although the first and second processes 210 and 220 are vertically moved to change the relative vertical between the first and second of the substrate polishing unit 1 and the rotating head Location, however, the invention is not limited thereto. For example, the rotary head can be moved vertically to change the relative vertical position between the first and second processes 210 and 220 and the rotary head 110. The polishing unit 300, the first and second process fluid supply units 51A and 520, the brush unit 6U), the spray unit 62A, and the pad adjusting unit are disposed on the outer side of the dome unit 200. 16/42 201117278 The polishing unit 300 chemically and mechanically polishes a surface of the wafer 7 fixed to the substrate supporting unit 1 to planarize the surface of the wafer 7 . Figure 4 is a perspective view of one of the polishing units shown in Figure 2, and Figure 5 is a partially cutaway side view of the polishing unit of Figure 4. Referring to Figures 3, 4 and 5, the polishing unit 3 can include a pressing member 310, a vertical arm member 32A, a swing arm member 33A, and a driver 340. Specifically, in the polishing process, the pressing member 3] is disposed above the wafer 7 of the fixed rotor 10. The pressing member 31 is rotated in the state of the disk wafer 7 to polish the wafer 70. The pressing member is called polished crystal = 曰 2: The chemical liquid (i.e., slurry (s-)) supplied to the wafer 70 is placed on the surface of the Japanese yen 70. Component ^ = 32° mosquito to the upper end of the pressing member. The vertical arm 3°40 provides a turning head. The top surface of the 1〇 is vertically extended and rotates about a longitudinal central axis by the driving member @d, torque. Hereinafter, Zhu Zhao Figure 6 shows the arrangement of the pressing member 310 and the vertical arm member 320. ... #Component 330 is disposed above the vertical arm member 320. The swinging f component 330 can be used to cover a rotating housing 33. The rotating housing 331 has a bar 34/belt/pulley assembly for driving from the driving portion to the vertical arm member 320. Transfer torque. The rotating housing 3 is coupled to the vertical head & The member 320 is coupled to the drive member 34A. The driving component may include: a first driving motor % moving arm member 330, 咕, U, - a second driving motor 342 for rotating the vertical arm member j 2 U , and --~^r, the straightening moving member 343, It is used to adjust one vertical position of the pressing member 31〇. A drive motor 341 is coupled to the rotating housing 331 to provide torque to the 17/42 201117278 square 疋 _ 331. The first-drive motor 341 alternately and repeatedly provides clockwise torque and pin torque. Therefore, the 'driving member' causes the crane arm member 330 to swing centering on a central axis coupled to the driving member 34'. When the polishing process is performed, the pressing member 310 can be horizontally reciprocated in an arc shape at an upper portion of the wafer 7 due to the swinging operation of the swing arm member 33. The second drive motor 342 is disposed below the first drive motor 341. The second drive motor 342 provides torque to the belt/pulley assembly. The belt_pulley assembly transfers the torque of the second drive motor 342 to the vertical arm member 32A. The belt-pulley assembly is built into the rotating housing 331 and may include an active pulley 332, a driven pulley 333, and a belt 334. The drive pulley 332 is disposed above the first drive motor 341 and coupled to one side of the vertical arm 344 that passes through the first drive motor 341. A second drive motor 342 is coupled to the other side of the vertical arm 344. «The leather wheel 333 faces the drive pulley 332. The driven pulley 333 is disposed above the vertical arm member 320 and coupled to the vertical arm member 32A. The main pulley 332 and the driven pulley 333 are connected to each other through a belt 334. The belt 334 is wound around the drive pulley 332 and the driven pulley 333. The torque of the second drive motor 342 is transmitted to the drive pulley 332 through the vertical arm 344. Thereby, the driving pulley 332 is rotated. The torque of the drive pulley 332 is transmitted to the driven pulley 333 through the belt 334. Thereby, the driven pulley 333 is rotated. The torque of the driven pulley 333 is transmitted to the vertical arm member 320. Thereby, the pressing member 310 and the vertical arm member 320 are rotated. The vertical moving member 343 is disposed on the rear side of one of the first drive motor 341 and the second drive motor 342. The vertical moving member 343 may include a ball screw 343a, a nut 343b, and a third drive motor 343e. 18/42 201117278 The ball screw 343a has a rod shape ' and is disposed perpendicularly to a ground. The nut 343b is mounted on the ball screw 343a and is fixed to the second drive motor 342. The third drive motor 343c is disposed below the ball screw 343a. A second drive motor 343c can be coupled to the ball screw 343a to provide clockwise torque and counterclockwise torque to the ball screw 343a. The third drive motor 34 allows the ball screw 343a to rotate clockwise or counterclockwise. The rotation of the ball screw 343a causes the nut 343b to move vertically along the ball screw 343a. Thereby, the second drive motor 342 coupled to the nut 343b is moved vertically with the nut 343b. Fk is the first. The drive motor 342 is vertically moved, and the first drive motor 341 and the swing arm member 330 are vertically moved, whereby the vertical arm member 32 and the pressing member 310 are also vertically moved. Although in the present embodiment, the vertical moving member 343 includes the ball screw 343a, the nut 343b, and the third drive motor 343c to provide a vertical motion force by a linear motor method, the present invention is not limited thereto. For example, the vertical moving component 343 can include a cylinder to provide a vertical motion. The first drive motor 341, the second drive motor 342, the ball screw 343a, the nut 343b, and the vertical arm 344 are built into a drive housing 345. The drive housing 345 has a long rod shape in a vertical direction. Hereinafter, the pressing member 31A and the vertical arm member 320 will be described in detail with reference to the accompanying drawings. Fig. 6 is a vertical sectional view showing one of the pressing member and a vertical arm member shown in Fig. 5. Referring to Figures 2, 5 and 6 'the vertical arm member 32 带 is rotated by the torque transmitted by the drive member 34 以 to rotate the pressing member 31 ,, and the vertical arm member 32 〇 provides air to the pressing member _ to Controls the pressure used to press the wafer 19/42 201117278 70. Specifically, the 'vertical arm member 320' may include a housing 32, a rotating shaft 322, a rotary joint 323, first and second bearings K4a and 324b, and first and second auxiliary shafts 325a and 325b. The outer casing 321 has an approximately cylindrical tube shape. One of the upper ends of the outer casing 321 is inserted into the rotary housing 331 of the swing arm member 330. Therefore, the outer casing 321 has engagement with the upper end of the rotary housing 331 and a light fitting to the lower end of the pressing member 31. The rotating shaft 322 is disposed in the outer casing 321 and spaced apart from the outer casing 321 . The rotary shaft 322 extends in the longitudinal direction of the outer casing 321 and includes an air passage 322a in a central portion. Air passage 322a along the axis of rotation. The longitudinal direction of 322 extends. The rotating shaft 322 is coupled to the driven pulley 333 and is rotated about a longitudinal central axis by the torque of the driven pulley 333. The upper end of the rotating shaft 322 is coupled to the rotary joint 323' rotary joint 323 to supply air to the air passage 322a of the rotary shaft 322 and to the driven pulley 333. The rotary joint 323 includes a rotating portion and a fixed portion, and the rotating portion is fixed to the driven pulley 333' such that the rotating portion rotates under the torque of the driven pulley 333. The fixing portion of the rotary joint 323 is connected to an air line 80 for supplying air. The air supplied from the air line 80 is introduced into the air passage 322a through the rotary joint 323, and flows to the pressing member 310 along the air passage 322a. The first and second bearings 324a and 324b are disposed between the outer casing 321 and the rotating shaft 322. The first and second bearings 324a and 324b connect the outer casing 321 to the rotating shaft 322 and support the rotating shaft 322 such that the rotating shaft 322 stably rotates. The first bearing 324a is disposed adjacent to the swing arm member 330, and the second bearing 324b is disposed adjacent to the pressing member 31A. The inner races of the first and second bearings 324a and 324b are mounted on the rotating shaft 322, and further 20/42 201117278 rotates together with the rotating shaft 322. The outer rings of the first and second bearings 324a and 324b are coupled to the outer casing 321 so as not to rotate as the rotary shaft rotates. Therefore, only the rotating shaft 322 rotates, and the outer casing 321 does not rotate. The first and second auxiliary shafts 325a and 325b may be disposed between the rotating shaft 322 and the outer casing 321 . The first auxiliary shaft 325a is disposed along the inner wall of the outer casing 321 and protects the outer casing 321. The second auxiliary shaft 325b surrounds one of the outer walls of the rotating shaft 322 and protects the rotating shaft 322. The pressing member 310 is fixed to the lower end of the rotating shaft 322. The pressing member 310 may include a polishing pad 31, a polishing housing 312, an upper plate 313 and a lower plate 314, a pad holder 315, a coupling plate 316, and a bellows 317. The polishing pad 311 has a plate shape and an approximately circular ring shape. In the polishing process, the polishing pad 311 is rotated to polish the wafer with the bottom surface of one of the polishing pads 311 contacting one of the top surfaces of the wafer. One of the polishing pads 311 has a diameter smaller than one of the diameters of the wafer. In the polishing process, the driving member 340 oscillates the polishing pad 311 to polish the wafer. As described above, since one of the polishing pads 311 has a diameter smaller than the diameter of one of the wafers, the polishing unit 300 can partially polish the crystal grains and prevent excessive polishing of a specific region. The polishing housing 312 is disposed above the polishing pad 311. The polishing housing 312 has an approximately circular shape and includes an upper plate 313 and a lower plate 314 and a bellows 317 therein. A coupling hole is disposed in the central top surface of the polishing housing 312, and the coupling plate 316 is disposed in the coupling hole. The coupling plate 316 is spaced apart from the polishing casing 312 and is fixed to the rotating shaft 322 of the vertical arm member 32A. The upper plate 313 is fixed to the bottom surface of the coupling plate 316, and the lower plate 314 is spaced apart from the upper plate 313. The pad holder 315 is coupled to the bottom surface of the lower plate 314 and the polishing pad 311 is coupled to the bottom surface of the pad holder 315. 21/42 201117278 The bellows 3 is disposed between the lower plate 3M and the upper plate 313. The air bellows 317 is formed of a metal material and accommodates air supplied by the rotary shaft air passage. The bellows 317 expands and contracts twice by air pressure. When the polishing process is performed, the bellows 3丨7 is vertically expanded by the air force, so that the polishing crucible 311 is in close contact with the air when the bellows 317 is above the substrate supporting unit 1 (see FIG. 2) = tube 317 By the true driving force provided by the air passage 322a, the polishing #3U is placed on the substrate support phantom-circle. Lack-Day As described above, since the pressing member 31 smashes and contracts the bellows 317, it is inclined in accordance with the shape of the top surface of the wafer during the butterfly process. Roots Referring again to Figures 1 to 3, the pad support member $ unit H) 0 side, the day of the tooth is 4 〇 1 sigh 1 in the substrate support. , ~ η 7 member is set in the _ unit · Tian Ye 之一 day of the sun 70 edge, the pad support pad 31] - part (Fu 〗 〖 研 研 '40! Support polishing circle 7 〇 outside the side to prevent The polishing crucible 311 is inclined to the configuration of the crystal piece 401. #苍知图7 and Fig. 8 detail that the pad support structure is disposed on the edge-shaped unit 2, the unit 510, and the two sides of the process fluid for the process fluid to For the polishing process and the cleaning process, the wafer 70 of the first plate-making unit 100. The side wall 22 is the king of the clothing; the supply unit 510 is fixed to the second process, and the single nozzle is The process fluid is supplied to process the wafer 7n L body to the wafer 70 supply unit 51 of the (four) head 110. In this embodiment, the process fluid from the first process flow injection can be used. The process fluid for cleaning or drying the wafer 7〇22/42 201117278 or the drying gas for drying the wafer 7Q. In one embodiment of the invention, the sin + 愠 & a process fluid supply unit = includes four Number of nozzles, the number of spray nozzles can be based on the process fluid used to clean the day 囫70 The number is increased or decreased. The two-process fluid supply unit 52 can swing and spray the process fluid = on the wafer 7 of the rotary head 1H). The money supplied to the second process fluid supply may be light liquid. In the spinning process, the liquid loading I is sprayed onto the wafer 7 by a separate chemical liquid ejecting member (not shown by the first process fluid supply unit 520. After the polishing process is performed, the brush unit 61 〇 physically removing the foreign matter stored on the surface of the wafer 70. The brush unit 61 is swingable and includes a brush pad. The brush pad contacts the surface of the wafer 7 and is physically removed. The foreign matter remaining on the surface of the crystal B17G. When the cleaning process is performed, the brush unit 610 places the brush pad over the rotary head 110 by its swing operation, and rotates the brush pad to clean the wafer fixed to the rotary head 11 70, m fog early element 620 is disposed on one side of the brush unit 610. The spray unit 620 sprays a process liquid having fine particles at a high pressure onto the wafer 70 fixed to the rotary head 11 to remove the remaining crystal The foreign matter on the surface of the circle 70. For example, the spray unit 620 sprays a process liquid in the form of fine particles using ultrasonic waves. The brush unit 610 is used to remove foreign matter having relatively large particles. In addition to the foreign matter having relatively small particles, the pad adjusting unit 700 cleans and recycles the polishing unit 30 when the polishing unit 300 is placed in a home port in a standby state. Forming a predetermined polishing pattern on the surface of the wafer to be contacted with 23/42 201117278 311 (see FIG. 6) to improve the polishing rate. The polishing pattern may be performed when a polishing process is performed on the wafer. In addition, the chemical liquid used in the polishing process can be hardened in the polishing pattern. The pad adjusting unit 7 can polish the surface of the polishing pad 311 to recycle the polishing pad 311. Fig. 7 is a perspective view of one of the pad supporting members shown in Fig. 3. Fig. 8 is a view between the substrate supporting member of Fig. 7 and the substrate unit and the polishing unit. One of the relative positions is shown in Fig. 2, Fig. 7 and Fig. 8, the pad supporting member 4' is disposed on the side of the substrate support ^70 100, and is spaced apart from the substrate supporting sheet it 00. When polishing crystal Circle/〇 one edge The pad support member 4〇1 partially supports the polishing pad (4) not contacting the polishing surface of the sundial 70 to prevent the pepper pad 31] from tilting to the outside of the wafer 70. In detail, the pad support member 401 may include a support The body 4i〇 and a matted 420 building body 4] are fixed to the bottom surface of the spider unit, and have a column shape extending from the bottom surface 231 to the top surface of the dome unit 2〇〇. The 420 is fixed to the upper end of the support body 41 and adjacent to the pad of the rotary head 110. The yak 420 ϋ is spaced apart from the rotary head 1 and supports a portion of the polishing pad 311 when polishing one of the edges of the wafer. The 塾 member 420 may include: a body 42 is fixed to the support body 41; - a slab 422' is transferred to the top surface of the face 421; and - a 塾 424 ' is used for holding the wafer One edge supports one part of the polishing pad. The face fit 42 is removably transferred to the support body 4] by the first screw 43 and has a -column shape. The support plate is similarly attached to the consumable body 421 ' by the second screw 24/42 201117278 423 and has a top surface and a side surface covered by the support 塾 424. The support pad 424 is made of synthetic resin, and when polishing one of the edges of the wafer 70, the support polishing pad 311 is exposed to the outside of the wafer 70 without contacting a portion of the wafer 70. For example, the support pad 424 has a circular top surface and an area smaller than one of the polishing pads 311. Viewed from the side, the top surface of the support pad 424 is on the same line as the top surface of the wafer 70. That is, the top surface of the support pad 424 has the same height as the top surface of the wafer 70 fixed to the spin head 11A. The support weir 424 is disposed on one of the polishing tracks 311 or an extension thereof. That is, the support weir 424 is disposed on a path of movement through which the polishing pad 311 can move during its swinging operation. For example, the radius of the polishing pad 311 is equal to or smaller than the sum of the distance between the support pad 424 and the rotary head 110 and the width of the support pad 424. Therefore, the support pad 424 can stably support the polishing pad 311. Thus, when polishing At one edge of the wafer 70, the rotating head no and the support pad 424 stably support the polishing pad 31, thereby preventing the polishing pad 311 from tilting to the outside of the wafer 70. Therefore, when polishing one of the edges of the wafer 70, the substrate is polished. The unit 1000 can prevent the edge of the wafer 7 from being broken and polishing defects due to the tilt of the polishing pad 311, and can improve the yield of the product. Since the edge of the wafer 70 is polished, the support pad 424 And the rotating head no supports the polishing pad 311, so the polishing pad 311 will wear the top surface of the supporting pad 424. When the supporting pad 424 is excessively worn, the top surface of the supporting pad 424 may even be lower than the top surface of the wafer 70. Even when the edge of one of the wafers 7 is polished, the support pad 424 supports the polishing pad 311 'The polishing pad 311 may be inclined to the outside of the wafer 70. To prevent the polishing 塾 311 from tilting, the support 塾 25/42 needs to be replaced.
J 201117278 424。此時，可在自支撐板422移除支撐墊424之後以—新 支撐墊更換支撐墊424 ’或者可將支撐板422與支撐墊424 一同移除以進行更換。 為感測支撐墊424之一磨損程度，基板支撐單元1〇〇 可包括第一位置感測部件710,用於感測支撐墊424之頂面 之尚度，以輸出支#塾424之頂面之一垂直位置值。第一 位置感測部件710設置於支撐塾424上方，益將支撐塾424 之頂面之一垂直位置值提供給控制單元控制單元6〇檢 查支撐墊424之一垂直位置值是否處於一預設垂直位置範 圍之外，並判斷是否更換支撐墊424。 以下，將參照附圖詳細闡述在拋光晶圓7〇之一邊緣 時’由墊支撐構件40〗支撐抱光墊311之過程。 圖9為圖2所示之基板拋光部件櫧光一晶圓之過程之 一流程圖。圖10為當跑光一晶圓之一邊緣時，圖8所示之 墊支撐構件支撐一拋光墊之過程之一示意圖。 參見圖9及圖1〇，在操作S110中，安放晶圓70於旋 轉頭110之頂面上。 接著，在操作S120中，設置拋光墊3U於晶圓70之 頂面上。 然後’在操作S130中，旋轉旋轉頭〗1〇，以旋轉晶圓 70 ’同時，抛光墊311旋轉並按壓晶圓70以拋光晶圓70。 在拋光晶圓70時，供應漿液至晶圓70之頂面，並旋轉及 擺動用於拋光晶圓70之拋光墊311，以改變與晶圓70之一 相對位置。 在拋光晶圓70時，拋光墊311藉由其擺動操作而移動 至晶圓70之一邊緣，以拋光晶圓70之邊緣。此時，支撐 26/42 201117278 即，拋光塾3U 未接觸晶圓70之-部分，亦 支撐構件·防止拋分。藉此，塾 圖11為圖8所示墊支 ^ 。 圖。圖12為當拖光一晶圓之—邊另貫^例之一不意 撲構件支撐-起塾之_之—衫圖。⑼不之墊支 410 402 440 ^ 440 ° 1又存構件402之配置相同於圖 ==相因rf ’與圖8所示塾支撐構件4G1之組:相同 之、件將由姉之辦編縣*，且不再贅述之。 f置調整部件440固定至支樓體410之下部，並垂直 地移劝支f體41G以調整塾部件儒之頂面（即支撐塾似 之頂，之同度）。在本具體實施例中’位置調整部件柳係 由一汽缸構成，但亦可由一驅動馬達構成。 位置調整部件440可連接至控制單元6〇並受控於控制 單兀60。亦即，控制單元60接收支撐墊424之頂面之一垂 直位置值（其係為由第一位置感測部件71〇輸出之一值）， 並根據所接收垂直位置值來控制位置調整部件44〇，以調整 支撐墊424頂面之高度至與一預設高度相同，舉例而言， 與晶圓70頂面之高度相同。 圖13為圖8所不塾支樓構件之另一實施例之一示音 圖。 參見圖13, 一墊支撐構件403設置於基板支撐單元ι〇〇 之一側，並與基板支撐單元100間隔開。在拋光晶圓7〇之 一邊緣時，墊支樓構件403局部地支撐抛光塾311未接觸 27/42 201117278 晶圓70之—拋光表面，以防止拋光墊3ιι傾斜至晶圓兀 之外側。 洋έ之，墊支撐構件4〇3可包括一支撐體45〇、—墊部 件46〇、一連接部件470及一位置調整部件480。支撐體450 固定至蛛形單元綱之底面231 (參見圖3)，並具有一桎 形狀，該桎形狀自底面231延伸至缽形單元2〇〇之頂面。 連接部件470耦合至支撐體45〇之上端，使得連接部 件470可垂直地移動，且墊部件460固定至連接部件47〇 之^端。墊部件460係與旋轉頭110相鄰地間隔開，並在 拋光晶圓70之一邊緣時支撐拋光墊311之一部分。 墊部件460可包括一支撐板461及一支撐墊462，支 撐板^61耦合至連接部件470之頂面，支撐墊則在拖 光晶圓70之一邊緣時，支撐拋光墊311之一部分。支撐板 461之上表面及側面可被支撑墊462覆蓋。 支撐墊462係由合成樹脂形成’並在拋光晶圓7〇之一 邊緣時，支撐拋光墊311之暴露於晶圓70外側未接觸晶圓 70之一部分。舉例而言，支撐墊462具有一圓形頂面，且 其之一面積小於拋光墊311之一面積。 支撐墊462設置於抛光墊31〗之一運動執道上或其一 延伸線上。亦即’支撐墊462設置於拋光墊311在其擺動 操作中可移動經過之一運動路徑上。舉例而言，拋光墊311 之半徑等於或小於支撐墊462與旋轉頭11〇間之距離與支 撐墊462之寬度之和。藉此，支撐墊462可穩定地支撐拋 光墊311。 由此，當抛光晶圓70之一邊緣時，旋轉頭11〇及支襠 塾462穩定地支撐拋光墊311，藉此防止拋光墊311傾斜至 28/42 201117278 晶圓。％之外側。因此，在拋光晶圓70之―邊緣時，基板 拋光單元1000可防止因拋光墊311傾斜而使 二 緣破碎及出現拋光缺陷，並可提高產品良率。070之邊 支撐墊462可移除地耦合至支撐板461。因此，當支撐 墊462被拋光墊311磨損一預定量或以上時，可移二並^ 換支撐墊462。 ’、 位置調整部件480設置於支撐板461與支撐體45〇之 間。位置調整部件藉由空氣壓力而㈣及膨脹，以調 整支撐墊462之垂直位置。 第二位置感測部件720可設置於基板支撐單元1〇〇與 墊支撐構件403之間。第二位置感測部件72()感測拋光塾 mi與基板支撐單元100之一相對位置，以提供拋光墊3ιι 之一水平位置值予控制單元60。在本具體實施例中，第二 位置感測部件720係分立地設置於墊支撐構件4〇3之一 側’但亦可設置於拋光單元300中。 控制單元6 0根據拋光墊3丨丨之一所接收水平位置值及 支撐墊462之頂面之一垂直位置值來控制位置調整部件 480 ’以調整支撐墊462之頂面之位置。 圖14A及圖14B為當拋光一晶圓時，圖13所示墊支撐 構件之頂面之高度隨拋光墊位置而變化之示意圖。 參見圖14A，當拋光墊311設置於晶圓70的除邊緣以 外之一區域中時，位置調整部件480收縮而使支撐墊462 向下移動。結果’使支撐墊462之頂面低於晶圓之頂面。 參見圖14B，當拋光墊311設置於晶圓70之邊緣中時， 位置調整部件480膨脹而使支撐墊462向上移動。結果， 支撐墊462之頂面局部地接觸拋光墊311之暴露於晶圓7〇 29/42 201117278 外側之拋光表面，以支撐拋光墊311。 根據上述具體實施例，當拋光一晶圓之一邊緣時，塾 支撐構件局部地支撐暴露於晶圓外側之拋光墊，藉此，在 抛光晶圓之邊緣時’墊支撐構件防止拋光墊傾斜至晶圓之 外側。因此，基板抛光卓元可提高抛光效率，益防止臭板 在一拋光製程中破碎。 以上所揭露之標的物應被視為例示性而非限制性的， 且隨附申請專利範圍旨在涵蓋歸屬於本發明之真正精神及 範圍内之所有修飾、改良及其他具體實施例。因此，在法 律所容許之最;度上，本發明之範圍應由㈣專利範^ 及其等效範圍之最廣可允許解釋來料，而*應受限於以 上之詳細說明。 ' 【圖式簡單說明】 本文包含附圖以更進-步理解本發明，該等附圖併入 本，明書中並構成本說明書之—部分。附圖係例示本發明 之實例性具體實關’並與本制—起用於轉本發明之 原理。於附圖中： x 圓型拋光 ^圖1為根據本發明一具體實施例之一單一晶 系統之一示意圖。 u m不日日_抛光早元之一立體圖。 圖3為圖2所示之-基板支撐單元 局部剖切立_。 Μ早Μ 圖4為圖2所示拋光單元之一立體圖。 圖5為圖4 圖6為圖5 直剖視圖。 所示拋光單元之一局部剖切側視圖。 所示之—按壓部件及—垂直臂部件之-垂 30/42 201117278 圖7為圖3所示墊支撐構件之一立體圖。 圖8為圖7所示墊支撐構件、一基板支撐單元與一拋 光單元間之相對位置之一示意圖。 圖9為圖2所示之晶圓抛光部件抛光一晶圓之過程之 —流程圖。 圖10為當拋光一晶圓之一邊緣時，圖8所示之塾支稽 構件支撐一拋光墊之過程之一示意圖。 圖11為圖8所示墊支撐構件之另一實施例之一示意 圖。 ..圖12為當抛光一晶圓之一邊緣時’圖11所示之塾支 撐構件支撐一拋光墊之過程之一示意圖。 圖13為圖8所示墊支撐構件之另一實施例之一示意 圖。 、 圖14A及圖14B為當拋光一晶圓時，圖13所示墊支撐 構件之頂面之高度隨拋光墊位置而變化之示意圖。 【主要元件符號說明】 10 裝載/卸載單元J 201117278 424. At this time, the support pad 424' may be replaced with a new support pad after the support pad 424 is removed from the support plate 422 or the support plate 422 may be removed together with the support pad 424 for replacement. To sense the degree of wear of one of the support pads 424, the substrate support unit 1A may include a first position sensing component 710 for sensing the degree of the top surface of the support pad 424 to output the top surface of the support #4242 One of the vertical position values. The first position sensing component 710 is disposed above the support weir 424, and provides a vertical position value of the top surface of the support weir 424 to the control unit control unit 6 to check whether the vertical position value of the support pad 424 is at a predetermined vertical position. Outside the position range, it is judged whether or not the support pad 424 is replaced. Hereinafter, the process of supporting the glazing pad 311 by the pad supporting member 40 when polishing one of the edges of the wafer 7 will be described in detail with reference to the accompanying drawings. Fig. 9 is a flow chart showing the process of polishing a wafer by the substrate polishing member shown in Fig. 2. Fig. 10 is a view showing a process of supporting a polishing pad by the pad supporting member shown in Fig. 8 when one edge of a wafer is run. Referring to Figures 9 and 1B, in operation S110, the wafer 70 is placed on the top surface of the rotary head 110. Next, in operation S120, the polishing pad 3U is disposed on the top surface of the wafer 70. Then, in operation S130, the rotary head is rotated to rotate the wafer 70' while the polishing pad 311 rotates and presses the wafer 70 to polish the wafer 70. When the wafer 70 is polished, the slurry is supplied to the top surface of the wafer 70, and the polishing pad 311 for polishing the wafer 70 is rotated and oscillated to change the position relative to one of the wafers 70. When the wafer 70 is polished, the polishing pad 311 is moved to one edge of the wafer 70 by its swing operation to polish the edge of the wafer 70. At this time, the support 26/42 201117278, that is, the polished 塾 3U does not contact the portion of the wafer 70, and also supports the member to prevent the throwing. Thereby, FIG. 11 is the pad support shown in FIG. Figure. Figure 12 is a diagram of one of the other examples when dragging a wafer. (9) No support 410 402 440 ^ 440 ° 1 The configuration of the reserving member 402 is the same as that of the figure == phase factor rf ' and the group of the 塾 support member 4G1 shown in Fig. 8 : the same piece will be compiled by the county And will not repeat them. The f-adjusting member 440 is fixed to the lower portion of the branch body 410, and vertically urges the support body 41G to adjust the top surface of the cymbal member (i.e., the top of the support). In the present embodiment, the position adjusting member is constituted by a cylinder, but may be constituted by a drive motor. The position adjustment component 440 can be coupled to the control unit 6A and controlled by the control unit 60. That is, the control unit 60 receives one of the top position values of the top surface of the support pad 424 (which is a value output by the first position sensing unit 71 )), and controls the position adjustment unit 44 according to the received vertical position value. That is, the height of the top surface of the support pad 424 is adjusted to be the same as a predetermined height, for example, the same as the height of the top surface of the wafer 70. Figure 13 is a pictorial representation of another embodiment of the frame member of Figure 8; Referring to Fig. 13, a pad supporting member 403 is disposed on one side of the substrate supporting unit ι and spaced apart from the substrate supporting unit 100. When the edge of the wafer 7 is polished, the pad member 403 partially supports the polishing pad 311 not contacting the polishing surface of the 27/42 201117278 wafer 70 to prevent the polishing pad 3 ι from tilting to the outside of the wafer cassette. The mat support member 4A can include a support body 45, a pad member 46A, a connecting member 470, and a position adjusting member 480. The support body 450 is fixed to the bottom surface 231 of the arachnid unit (see Fig. 3) and has a meander shape extending from the bottom surface 231 to the top surface of the dome unit 2''. The connecting member 470 is coupled to the upper end of the support body 45, such that the connecting member 470 is vertically movable, and the pad member 460 is fixed to the end of the connecting member 47. The pad member 460 is spaced adjacent to the spin head 110 and supports a portion of the polishing pad 311 when polishing one of the edges of the wafer 70. The pad member 460 can include a support plate 461 and a support pad 462 coupled to the top surface of the attachment member 470 that supports a portion of the polishing pad 311 when one of the edges of the wafer 70 is towed. The upper surface and the side surface of the support plate 461 may be covered by the support pad 462. The support pad 462 is formed of synthetic resin' and when the edge of one of the wafers 7 is polished, the portion of the support polishing pad 311 exposed to the outside of the wafer 70 does not contact the wafer 70. For example, the support pad 462 has a circular top surface and one of the areas is smaller than the area of one of the polishing pads 311. The support pad 462 is disposed on one of the polishing pads 31 or an extension line thereof. That is, the support pad 462 is disposed on the polishing pad 311 to move through one of the moving paths during its swing operation. For example, the radius of the polishing pad 311 is equal to or smaller than the sum of the distance between the support pad 462 and the rotary head 11 and the width of the support pad 462. Thereby, the support pad 462 can stably support the polishing pad 311. Thus, when one edge of the wafer 70 is polished, the spin head 11 and the support 塾 462 stably support the polishing pad 311, thereby preventing the polishing pad 311 from tilting to the 28/42 201117278 wafer. % outside. Therefore, when polishing the "edge" of the wafer 70, the substrate polishing unit 1000 can prevent the two edges from being broken and the polishing defects due to the inclination of the polishing pad 311, and the product yield can be improved. The side of the 070 support pad 462 is removably coupled to the support plate 461. Therefore, when the support pad 462 is worn by the polishing pad 311 by a predetermined amount or more, the support pad 462 can be moved. The position adjusting member 480 is disposed between the support plate 461 and the support 45〇. The position adjusting member is (4) and expanded by air pressure to adjust the vertical position of the support pad 462. The second position sensing member 720 may be disposed between the substrate supporting unit 1A and the pad supporting member 403. The second position sensing member 72() senses the relative position of the polishing pad mi to one of the substrate supporting units 100 to provide a horizontal position value of the polishing pad 3 ι to the control unit 60. In the present embodiment, the second position sensing member 720 is separately disposed on one side of the pad supporting member 4〇3 but may also be disposed in the polishing unit 300. The control unit 60 controls the position adjusting member 480' to adjust the position of the top surface of the support pad 462 based on the received horizontal position value of one of the polishing pads 3 and one of the top position values of the top surface of the support pad 462. 14A and 14B are views showing the height of the top surface of the pad supporting member shown in Fig. 13 as a function of the position of the polishing pad when polishing a wafer. Referring to Fig. 14A, when the polishing pad 311 is disposed in one of the regions of the wafer 70 except the edge, the position adjusting member 480 is contracted to move the support pad 462 downward. As a result, the top surface of the support pad 462 is made lower than the top surface of the wafer. Referring to FIG. 14B, when the polishing pad 311 is disposed in the edge of the wafer 70, the position adjusting member 480 is inflated to move the support pad 462 upward. As a result, the top surface of the support pad 462 partially contacts the polishing surface of the polishing pad 311 exposed to the outside of the wafer 7 29/42 201117278 to support the polishing pad 311. According to the above specific embodiment, when one edge of a wafer is polished, the crucible support member partially supports the polishing pad exposed to the outside of the wafer, whereby the pad support member prevents the polishing pad from tilting to the edge of the wafer when polishing Outside the wafer. Therefore, the substrate polishing element can improve the polishing efficiency and prevent the odor board from being broken in a polishing process. The above-identified subject matter is intended to be illustrative and not limiting, and the scope of the invention is intended to cover all modifications, modifications and other embodiments. Therefore, to the extent permitted by law, the scope of the invention should be construed by the broadest permissible interpretation of (4) patents and their equivalents, and * should be limited to the above detailed description. BRIEF DESCRIPTION OF THE DRAWINGS The present invention is further described in the accompanying drawings, which are incorporated herein by reference in its entirety herein The drawings illustrate exemplary embodiments of the invention and are used in connection with the invention. In the drawings: x Circular Polishing Fig. 1 is a schematic view of a single crystal system in accordance with an embodiment of the present invention. u m is not a day _ polished one element of a three-dimensional picture. Fig. 3 is a partial cross-sectional view of the substrate supporting unit shown in Fig. 2. Μ早Μ Figure 4 is a perspective view of one of the polishing units shown in Figure 2. Figure 5 is a cross-sectional view of Figure 5 and Figure 6; One of the polishing units shown is partially cut away from the side view. As shown - the pressing member and the vertical arm member - 垂 30/42 201117278 Figure 7 is a perspective view of the pad supporting member shown in Figure 3. Figure 8 is a schematic view showing the relative position between the pad supporting member, a substrate supporting unit and a polishing unit shown in Figure 7. Figure 9 is a flow chart showing the process of polishing a wafer by the wafer polishing member shown in Figure 2. Figure 10 is a schematic illustration of the process of supporting a polishing pad as shown in Figure 8 when polishing one of the edges of a wafer. Figure 11 is a schematic illustration of another embodiment of the pad support member of Figure 8. Fig. 12 is a view showing a process of supporting a polishing pad by the support member shown in Fig. 11 when one edge of a wafer is polished. Figure 13 is a schematic illustration of another embodiment of the pad support member of Figure 8. 14A and 14B are schematic views showing the height of the top surface of the pad supporting member shown in Fig. 13 as a function of the position of the polishing pad when polishing a wafer. [Main component symbol description] 10 Load/unload unit
Ua、lib、lie 及 lld 裝載埠 12a、12b、1:2c及i2d前開式統一標準盒(FOUP) 2〇 碼珠機械手 30 緩衝單元 41 第一傳送路徑 42 第一傳送軌道 43 第二傳送路徑 44 第二傳送執道 5〇 主傳送機械手 31/42 201117278 60 控制單元 70 晶圓 80 空氣管線 100 基板支撐單元 110 旋轉頭 120 支撐部件 200 钵型單元 210 第一製程妹 211 側壁 212 頂板 213 引導部件 213a 第一引導壁 213b 第二引導壁 220 第二製程缽 221 側壁 222 頂板 230 第一回收桶 231 底板/底面 231a 回收流動路徑 231b 第一回收孔 232 第一側壁 233 第二側壁 234 連接部件 240 第二回收桶 241 底板 241a 回收流動路徑 32/42 201117278 241b 第二回收孔 242 第一側壁 243 第二側壁 251 第一回收管 252 第二回收管 260 升/降構件 261 托架 262 運動軸 263 驅動器 300 拋光單元 310 按壓部件 311 拋光墊 312 抛光殼體 313 上板 314 下板 315 墊支架 316 耦合板 317 波紋管 320 垂直臂部件 321 外殼 322 旋轉軸 322a 空氣通道 323 旋轉接頭 324a 第一袖承 324b 第二轴承 325a 第一輔助車由 201117278 325b 第二輔助軸 330 擺動臂部件 331 旋轉殼體 332 主動皮帶輪 333 從動皮帶輪 334 皮帶 340 驅動部件 341 第一驅動馬達 342 第二驅動馬達 343 垂直運動部件 343a 滾珠螺桿 343b 螺母 343c 第三驅動馬達 344 垂直臂 345 驅動殼體 401 墊支撐構件 402 墊支撐構件 403 墊支撐構件 410 支撐體 420 墊部件 421 耦合體 422 支撐板 423 第二螺釘 424 支撐墊 430 第一螺釘 440 位置調整部件 34/42 201117278 450 支撐體 460 墊部件 461 支撐板 462 支撐墊 470 連接部件 480 位置調整部件 510 第一製程流體供應單元 520 第二製程流體供應單元 610 刷子單元 620 喷霧單元 700 墊調節單元 710 第一位置感測部件 720 第二位置感測部件 1000 基板拋光單元 2000 基板處理系統 RSI 第一回收空間 RS2 第二回收空間 35/42Ua, lib, lie and lld load 埠 12a, 12b, 1:2c and i2d front open unified standard box (FOUP) 2 珠 bead robot 30 buffer unit 41 first transport path 42 first transport track 43 second transport path 44 2nd transmission channel 5〇 main transmission robot 31/42 201117278 60 control unit 70 wafer 80 air line 100 substrate support unit 110 rotating head 120 support member 200 钵 type unit 210 first process sister 211 side wall 212 top plate 213 guide Component 213a First guide wall 213b Second guide wall 220 Second process 钵221 Side wall 222 Top plate 230 First recovery tank 231 Floor/bottom surface 231a Recovery flow path 231b First recovery hole 232 First side wall 233 Second side wall 234 Connection part 240 Second recovery tank 241 bottom plate 241a recovery flow path 32/42 201117278 241b second recovery hole 242 first side wall 243 second side wall 251 first recovery pipe 252 second recovery pipe 260 up/down member 261 bracket 262 motion axis 263 drive 300 polishing unit 310 pressing member 311 polishing pad 312 polishing housing 313 upper plate 314 lower plate 315 pad Rack 316 Coupling plate 317 Bellows 320 Vertical arm member 321 Housing 322 Rotary shaft 322a Air passage 323 Rotary joint 324a First sleeve 324b Second bearing 325a First auxiliary vehicle by 201117278 325b Second auxiliary shaft 330 Swing arm member 331 Rotating shell Body 332 Drive pulley 333 Drive pulley 334 Belt 340 Drive unit 341 First drive motor 342 Second drive motor 343 Vertical moving part 343a Ball screw 343b Nut 343c Third drive motor 344 Vertical arm 345 Drive housing 401 Pad support member 402 Pad Support member 403 pad support member 410 support body 420 pad member 421 coupling body 422 support plate 423 second screw 424 support pad 430 first screw 440 position adjustment member 34/42 201117278 450 support body 460 pad member 461 support plate 462 support pad 470 Connection member 480 Position adjustment member 510 First process fluid supply unit 520 Second process fluid supply unit 610 Brush unit 620 Spray unit 700 Pad adjustment unit 710 First position sensing unit 720 Second position sensing unit 1000 base Plate Polishing Unit 2000 Substrate Processing System RSI First Recycling Space RS2 Second Recycling Space 35/42