CN114454085B - Chemical mechanical polishing method and polishing system - Google Patents

Chemical mechanical polishing method and polishing system Download PDF

Info

Publication number
CN114454085B
CN114454085B CN202111629944.1A CN202111629944A CN114454085B CN 114454085 B CN114454085 B CN 114454085B CN 202111629944 A CN202111629944 A CN 202111629944A CN 114454085 B CN114454085 B CN 114454085B
Authority
CN
China
Prior art keywords
polishing
wafer
assembly
chemical mechanical
guide rail
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111629944.1A
Other languages
Chinese (zh)
Other versions
CN114454085A (en
Inventor
王春龙
许振杰
陈映松
王同庆
路新春
其他发明人请求不公开姓名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huahaiqingke Co Ltd
Original Assignee
Huahaiqingke Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huahaiqingke Co Ltd filed Critical Huahaiqingke Co Ltd
Priority to CN202111629944.1A priority Critical patent/CN114454085B/en
Publication of CN114454085A publication Critical patent/CN114454085A/en
Application granted granted Critical
Publication of CN114454085B publication Critical patent/CN114454085B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/02—Frames; Beds; Carriages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses a chemical mechanical polishing method and a polishing system, wherein the polishing method comprises the following steps: the polishing head configured by the first polishing assembly loads the wafer from the wafer interaction device and moves towards the polishing pad, and the polishing head presses the wafer against the polishing pad to carry out polishing; when the first polishing assembly is used for polishing, the next wafer is placed on the wafer interaction device by the mechanical arm; a polishing head configured by the second polishing component moves to the wafer interaction device from the initial position, and resets after the wafer is loaded; a polishing head configured by the first polishing component places the polished wafer on a wafer interaction device to be transferred; the polishing head arranged on the second polishing assembly moves towards the polishing pad according to a set path, and the loaded wafer is pressed against the polishing pad to be polished; when the second polishing assembly performs polishing, the polished wafer is transferred and placed by the manipulator, and the polishing head configured by the first polishing assembly loads the wafer to be polished.

Description

Chemical mechanical polishing method and polishing system
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a chemical mechanical polishing method and a chemical mechanical polishing system.
Background
The integrated circuit industry is the core of the information technology industry and plays a key role in the process of upgrading the boosting manufacturing industry to digitalization and intellectualization transformation. The chip is a carrier of an integrated circuit, and the chip manufacturing relates to the process flows of chip design, wafer manufacturing, wafer processing, electrical measurement, cutting, packaging, testing and the like. Wherein, the chemical mechanical polishing belongs to the wafer manufacturing process. Chemical Mechanical Polishing (CMP) is a globally planarized ultra-precise surface processing technique. Chemical mechanical polishing generally attracts a wafer to a bottom surface of a carrier head, the surface of the wafer having a deposition layer is pressed against an upper surface of a polishing pad, and the carrier head rotates in the same direction as the polishing pad under the actuation of a polishing assembly and gives a downward load to the wafer; meanwhile, the polishing solution is supplied to the upper surface of the polishing pad and distributed between the wafer and the polishing pad, so that the chemical mechanical polishing of the wafer is completed under the combined action of chemistry and machinery.
In a chemical mechanical polishing system, it is important to match the production cycle times of the functional modules with each other. Avoiding or shortening the waiting time and greatly improving the production capacity of the polishing system. In the prior art, each polishing module is provided with a polishing head, after the polishing head finishes polishing, a polished wafer needs to be placed on a wafer interaction device, then the wafer interaction device is taken away by a manipulator, a new wafer is placed, and then the polishing head is loaded and moved to the upper side of the polishing pad for polishing. Therefore, the wafer pick-and-place sheet forms a large amount of waiting time, which is not favorable for the improvement of the production cycle.
Disclosure of Invention
The present invention aims to solve at least to some extent one of the technical problems existing in the prior art.
To this end, an embodiment of the present invention provides a chemical mechanical polishing method, which includes the steps of:
s1, the polishing head configured by the first polishing assembly loads the wafer from the wafer interaction device and moves towards the polishing pad, and the polishing head presses the wafer against the polishing pad to perform polishing;
s2, when the first polishing component carries out polishing, the manipulator places the next wafer on the wafer interaction device; a polishing head configured by the second polishing component moves to the wafer interaction device from the initial position, and resets after the wafer is loaded;
s3, the polishing head configured by the first polishing component places the polished wafer on the wafer interaction device to be transferred; the polishing head arranged on the second polishing assembly moves towards the polishing pad according to a set path, and the loaded wafer is pressed against the polishing pad to be polished;
s4, when the second polishing component carries out polishing, the manipulator transfers the polished wafer and places the next wafer, and the polishing head configured by the first polishing component loads the wafer to be polished;
s5, resetting the second polishing component according to a set path after the second polishing component finishes polishing; and when the first polishing assembly performs polishing, the polishing head configured by the second polishing assembly places the polished wafer on the wafer interaction device and resets the wafer.
In a preferred embodiment, the first polishing assembly is disposed on a longitudinal rail outside the polishing pad, and the longitudinal rail can move along a connecting line between the wafer interaction device and the polishing pad, so that the wafer loaded by the first polishing assembly can interact between the wafer interaction device and the polishing pad.
In a preferred embodiment, the second polishing assembly is arranged on a transverse guide rail which is connected with the side part of the longitudinal guide rail in a sliding way; the second polishing assembly can move along the transverse guide rail, and the transverse guide rail and the second polishing assembly on the transverse guide rail can move along the longitudinal guide rail so as to realize the interaction of the wafer loaded by the second polishing assembly between the wafer interaction device and the polishing pad.
As a preferred embodiment, in step S5, the first polishing assembly moves toward the wafer interaction device after finishing polishing, and at the same time, the second polishing assembly moves toward the polishing pad along a set path; the first polishing component places the polished wafer on the wafer interaction device, and the manipulator places the next wafer on the wafer interaction device and loads the next wafer by the first polishing component.
As a preferred embodiment, when the first polishing assembly or the second polishing assembly is located directly above the wafer interaction device, the polishing head configured by the first polishing assembly or the second polishing assembly moves upward, so that the distance between the polishing head and the wafer interaction device meets the requirement of a manipulator for picking and placing a wafer.
As a preferred embodiment, the set path is a path formed by the second polishing assembly moving along the transverse guide rail and the longitudinal guide rail, respectively; alternatively, the set path is a path formed by the second polishing assembly moving along the transverse guide and the longitudinal guide at the same time.
In addition, the present invention also discloses a chemical mechanical polishing system comprising:
the front-end module is used for realizing the in and out of the wafer;
the polishing unit comprises at least one polishing module, and the polishing module comprises a polishing disk provided with a polishing pad, a trimming device, a liquid supply device and a wafer interaction device;
a cleaning unit disposed between the front end module and the polishing unit;
the wafer transmission module is used for realizing the transmission of the wafer;
wherein the polishing module further comprises a first polishing assembly and a second polishing assembly, the first polishing assembly and the second polishing assembly are arranged in a staggered manner, and polishing heads are arranged at the lower parts of the first polishing assembly and the second polishing assembly, so that wafers are polished by turns according to the chemical mechanical polishing method of any one of claims 1 to 6.
In a preferred embodiment, a longitudinal guide rail is arranged outside the polishing disk, and the first polishing assembly is slidably connected to the longitudinal guide rail; and the lateral part of the longitudinal guide rail is vertically provided with a transverse guide rail, and the second polishing assembly is connected with the transverse guide rail in a sliding manner.
In a preferred embodiment, the first polishing assemblies are staggered with the transverse guide rail along the vertical direction, and the first polishing assemblies are positioned at the lower side of the transverse guide rail.
In a preferred embodiment, the transverse guide rail is horizontally arranged on the upper side of the polishing pad, one end of the transverse guide rail is arranged on the longitudinal guide rail, and the other end of the transverse guide rail is arranged on the auxiliary guide rail; the auxiliary guide rail is arranged opposite to the longitudinal guide rail.
As a preferred embodiment, the polishing modules are arranged in pairs, the wafer interaction devices configured by the polishing modules are arranged adjacently, and the wafer transmission module is arranged close to the wafer interaction devices.
As a preferred embodiment, adjacent polishing modules share a wafer interaction device.
As a preferred embodiment, the chemical mechanical polishing system further comprises a wafer buffer device disposed between the polishing unit and the cleaning unit, between the cleaning unit and the front-end module, and/or inside the polishing unit, so as to place the wafer of each unit module in the wafer buffer device.
As a preferred embodiment, the longitudinal guide rail is disposed along a length direction of the polishing unit, and the polishing modules are arranged along the length direction of the longitudinal guide rail in at least one number.
As a preferred embodiment, the number of the polishing modules arranged along the length direction of the transverse guide rail is at least one.
As a preferred embodiment, the number of the polishing modules arranged along the length direction of the transverse guide rails is a pair, and a reinforcing structure parallel to the transverse guide rails is arranged between the adjacent longitudinal guide rails.
The beneficial effects of the invention include:
(1) each polishing module is provided with a first polishing component and a second polishing component, wherein when one polishing component carries out polishing, the other polishing component finishes the action of loading wafers so as to reduce the waiting time and improve the production capacity of equipment.
(2) The upward action of the polishing head of the polishing assembly is utilized, so that the distance between the polishing head and the wafer interaction device meets the requirement of taking and placing the wafer by a manipulator, and the influence of the relative position of the polishing assembly and the wafer interaction device does not need to be considered during program setting.
(3) And a set of wafer interaction device is shared between adjacent polishing modules, so that the length of the polishing system is effectively shortened, and the compactness of equipment layout is improved.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only, and which do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic view of a chemical mechanical polishing system of the present invention;
FIG. 2 is a plan view of the polishing module of the present invention;
FIG. 3 is a perspective view of the polishing module of the present invention;
FIGS. 4-7 are schematic illustrations of other embodiments of the chemical mechanical polishing system of the present invention;
FIG. 8 is a flow chart of the chemical mechanical polishing method of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is illustrative and exemplary in nature and is not to be construed as limiting the embodiments of the invention and the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.
The drawings accompanying this specification are for the purpose of illustrating the concepts of the invention and are not necessarily to scale, the drawings being schematic representations of the shapes of the parts and their interrelationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and a Wafer (Wafer, W) is also referred to as a Substrate (Substrate), which means equivalent to the actual function.
FIG. 1 shows a schematic view of a chemical mechanical polishing system 1. The chemical mechanical polishing system 1 includes:
the front-end module 10 is used for realizing the in and out of the wafer;
a polishing unit 20 including at least one polishing module 20A, the polishing module 20A including a polishing disk 22 configured with a polishing pad 21, a dressing device 23, a liquid supply device 24 and a wafer interaction device 25, as shown in fig. 2;
a cleaning unit 30 provided between the front end module 10 and the polishing unit 20;
the wafer transmission module 40 is used for realizing the transmission of the wafer;
the polishing module 20A further includes a first polishing assembly 26 and a second polishing assembly 27, the first polishing assembly 26 and the second polishing assembly 27 are disposed in a staggered manner, and polishing heads are disposed at lower portions thereof to polish wafers in turn.
In the embodiment shown in fig. 1, the cleaning unit 30 includes a plurality of cleaning modules and drying modules, which are sequentially disposed along the width direction of the chemical mechanical polishing system 1; the polishing unit 20 includes two polishing modules 20A, which are arranged in parallel. The wafer transfer module 40 includes a first transfer robot 41 and a second transfer robot 42, the first transfer robot 41 being located between the front end module 10 and the cleaning unit 30, and the second transfer robot 42 being located between the cleaning unit 30 and the polishing unit 20.
The chemical mechanical polishing system 1 further includes a wafer buffering device 50 disposed between the first transfer robot 41 and the second transfer robot 42 and disposed side by side with the cleaning module, as shown in fig. 1, for buffering the wafers transferred by the first transfer robot 41 and the second transfer robot 42, so as to ensure the smoothness of wafer transfer.
Fig. 2 is a plan view of the polishing module 20A, fig. 3 is a perspective view of the polishing module 20A, and the positional relationship of each component in the polishing module 20A will be described with reference to fig. 2 and 3. The polishing module 20A includes a polishing platen 22, and a polishing pad 21 is disposed on an upper surface of the polishing platen 22; the fixed end of the dressing device 23 is arranged outside the polishing disc 22, and the movable end of the dressing device 23 can swing around the fixed end to realize dressing of the polishing pad 21; the fixed end of the liquid supply device 24 is arranged at the outer side of the polishing disc 22, and the liquid supply device 24 swings around the movable end to realize the switching between the working position and the standby position. The polishing module 20A further includes a wafer interface 25 disposed proximate the polishing platen 22 to facilitate wafer interfacing between the wafer interface 25 and the polishing platen 22 by the polishing head.
Further, a longitudinal guide 28 is disposed outside the polishing disc 22, and the first polishing assembly 26 is slidably connected to the longitudinal guide 28; the lateral parts of the longitudinal rails 28 are vertically provided with transverse rails 29, and the second polishing assembly 27 is slidably connected to the transverse rails 29.
Figure 3 is a perspective view of one embodiment of the polishing module 20A with the first polishing elements 26 and the cross-rails 29 vertically staggered to avoid interference with the movement of the first polishing elements 26 and the cross-rails 29. Specifically, the first polishing member 26 is located on the lower side of the cross rail 29, and the top surface of the first polishing member 26 is spaced apart from the opposite side of the cross rail 29.
To ensure smooth movement of the cross-rail 29 and the second polishing assembly 27 thereon, the polishing module 20A is also provided with an auxiliary rail 28 a. Specifically, the lateral guide 29 is horizontally disposed on the upper side of the polishing pad 21, one end thereof is disposed on the longitudinal guide 28, and the other end thereof is disposed on the auxiliary guide 28a, the auxiliary guide 28a being disposed opposite to the longitudinal guide 28.
Figure 4 is a schematic view of another embodiment of the chemical mechanical polishing system of the present invention. The polishing modules 20A are arranged in pairs, the wafer interaction devices 25 configured on the polishing modules 20A are arranged adjacently, and the wafer transmission module 40 is arranged close to the wafer interaction device 25, so that the wafer is conveniently carried by a manipulator.
As another embodiment of the present invention, adjacent polishing modules 20A may share a wafer interacting device 25, as shown in fig. 5, to effectively shorten the length of the polishing system and improve the compactness of the layout of the apparatus.
In the embodiment shown in fig. 4 and 5, the chemical mechanical polishing system further includes a wafer buffer device 50 disposed between the polishing unit 20 and the cleaning unit 30, and between the cleaning unit 30 and the front end module 10, so as to place the wafer of each unit module in the wafer buffer device 50.
Fig. 6 is a schematic diagram of another embodiment of the chemical mechanical polishing system according to the present invention, in which the longitudinal rails 28 are disposed along the length direction of the polishing unit 20, the number of the polishing modules 20A arranged along the longitudinal rails 28 is 3, the number of the polishing modules 20A arranged along the transverse rails 29 is a pair, and the number of the wafer buffering devices 50 is two, wherein one wafer buffering device 50 is disposed inside the polishing unit 20.
As a variation of the embodiment of fig. 6, the chemical mechanical polishing system also adds two sets of polishing modules 20A to the solution shown in fig. 4, in a detachable manner, to increase flexibility in layout of the apparatus.
In the present invention, since the first polishing assembly 26 is a cantilever beam, in order to ensure the uniformity of the polishing quality of the two polishing assemblies, a pair of polishing modules 20A are arranged along the direction of the transverse guide rails 29, and a reinforcing structure parallel to the transverse guide rails 29 is arranged between the adjacent longitudinal guide rails 28 to prevent the transverse guide rails 29 from being deformed due to uneven stress.
Meanwhile, the invention also provides a chemical mechanical polishing method, the flow chart of which is shown in fig. 8, and the specific steps are briefly described below with reference to fig. 3:
s1, the polishing head of the first polishing assembly 26 loads the wafer from the wafer interacting device 25 and moves toward the polishing pad 21, and the polishing head presses the wafer against the polishing pad 21 to perform polishing;
s2, when the first polishing component 26 performs polishing, the manipulator places the next wafer on the wafer interaction device 25; the polishing head configured by the second polishing assembly 27 moves from the initial position to the wafer interaction device 25, and resets after loading the wafer;
s3, the polishing head of the first polishing assembly 26 places the polished wafer on the wafer interaction device 25 to be transferred; the polishing head configured by the second polishing assembly 27 moves toward the polishing pad 21 according to a set path, and presses the loaded wafer against the polishing pad 21 to perform polishing;
s4, when the second polishing assembly 27 performs polishing, the manipulator transfers the polished wafer and places the next wafer, and the polishing head configured by the first polishing assembly 26 loads the wafer to be polished;
s5, resetting the second polishing component 27 according to a set path after finishing polishing; while the first polishing assembly is performing polishing, the polishing head of the second polishing assembly is configured to place the polished wafer on the wafer interface 25 and reposition the wafer.
Specifically, the first polishing assembly 26 is disposed on a longitudinal rail 28 outside the polishing pad 21, which is capable of moving along a line between the wafer interactive device 25 and the polishing pad 21 to realize interaction between the wafer interactive device 25 and the polishing pad 21 by the wafer loaded by the first polishing assembly 26.
The second polishing assembly 27 is arranged on a transverse guide rail 29, and the transverse guide rail 29 is slidably connected with the side part of the longitudinal guide rail 28; the second polishing assembly 27 can move along the transverse guide 29, and the transverse guide 29 and the second polishing assembly 27 thereon can move along the longitudinal guide 28, so as to realize the interaction between the wafer interaction device 25 and the polishing pad 21 for the wafers loaded by the second polishing assembly 27.
In step S5, the first polishing assembly 26 moves toward the wafer interactive device 25 after finishing polishing, and at the same time, the second polishing assembly 27 moves toward the polishing pad 21 along the set path; the first polishing assembly 26 places the polished wafer on the wafer interactive device 25, and the robot places the next wafer on the wafer interactive device 25 and is loaded by the first polishing assembly 26.
When the first polishing assembly 26 or the second polishing assembly 27 is located right above the wafer interaction device 25, the polishing head configured by the first polishing assembly 26 or the second polishing assembly 27 moves upward, so that the distance between the polishing head and the wafer interaction device 25 meets the requirement of a manipulator for picking and placing a wafer. Regarding the upward action of the polishing head, reference may be made to the description in patent CN214393774U, i.e., the balance frame and the carrier plate connected thereto, the flexible membrane as a whole moves upward relative to the coupling plate, and the coupling plate is connected with the driving motor to enlarge the distance between the bottom surface of the polishing head and the wafer interacting device 25.
In the present invention, the set path is a path formed by the second polishing assembly 27 moving along the transverse rail 29 and the longitudinal rail 28, respectively; alternatively, the set path is a path along which the second polishing assembly 27 moves along the lateral guide 29 and the longitudinal guide 28 at the same time. When the second polishing unit 27 moves along the transverse guide 29 and the longitudinal guide 28 at the same time, it is necessary to avoid interference with other installation components and ensure the smoothness of the work.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (13)

1. A chemical mechanical polishing method comprising the steps of:
s1, the polishing head configured by the first polishing assembly loads the wafer from the wafer interaction device and moves towards the polishing pad, and the polishing head presses the wafer against the polishing pad to perform polishing;
s2, when the first polishing component carries out polishing, the manipulator places the next wafer on the wafer interaction device; a polishing head configured by the second polishing component moves to the wafer interaction device from the initial position, and resets after the wafer is loaded;
s3, the polishing head configured by the first polishing component places the polished wafer on the wafer interaction device to be transferred; the polishing head arranged on the second polishing assembly moves towards the polishing pad according to a set path, and the loaded wafer is pressed against the polishing pad to be polished;
s4, when the second polishing component carries out polishing, the manipulator transfers the polished wafer and places the next wafer, and the polishing head configured by the first polishing component loads the wafer to be polished;
s5, resetting the second polishing component according to a set path after the second polishing component finishes polishing; when the first polishing assembly carries out polishing, a polishing head arranged on the second polishing assembly places the polished wafer on the wafer interaction device and resets the wafer;
the first polishing assembly is arranged on a longitudinal guide rail on the outer side of the polishing pad and can move along a connecting line between the wafer interaction device and the polishing pad so as to realize interaction between the wafer loaded by the first polishing assembly and the polishing pad; the second polishing assembly is arranged on the transverse guide rail, and the transverse guide rail is connected to the side part of the longitudinal guide rail in a sliding mode; the second polishing assembly can move along the transverse guide rail, and the transverse guide rail and the second polishing assembly on the transverse guide rail can move along the longitudinal guide rail, so that the wafer loaded by the second polishing assembly can be interacted between the wafer interaction device and the polishing pad.
2. The chemical mechanical polishing method of claim 1, wherein the first polishing member moves toward the wafer interface after completion of polishing, and the second polishing member moves toward the polishing pad along a predetermined path at the same time in step S5; the first polishing component places the polished wafer on the wafer interaction device, and the manipulator places the next wafer on the wafer interaction device and loads the next wafer by the first polishing component.
3. A chemical mechanical polishing method as recited in claim 1, wherein when the first polishing assembly or the second polishing assembly is positioned directly above the wafer interface, a polishing head associated with the first polishing assembly or the second polishing assembly is moved upward such that a distance between the polishing head and the wafer interface meets a robot handling requirement for the wafer.
4. The chemical mechanical polishing method according to claim 1, wherein the set path is a path formed by moving the second polishing member along the lateral guide and the longitudinal guide, respectively; alternatively, the set path is a path formed by the second polishing assembly moving along the lateral guide and the longitudinal guide at the same time.
5. A chemical-mechanical polishing system, comprising:
the front-end module is used for realizing the in and out of the wafer;
the polishing unit comprises at least one polishing module, and the polishing module comprises a polishing disk provided with a polishing pad, a trimming device, a liquid supply device and a wafer interaction device;
a cleaning unit disposed between the front end module and the polishing unit;
the wafer transmission module is used for realizing the transmission of the wafer;
the polishing module further comprises a first polishing assembly and a second polishing assembly, wherein the first polishing assembly and the second polishing assembly are arranged in a staggered mode, and polishing heads are arranged at the lower portions of the first polishing assembly and the second polishing assembly so as to polish wafers in turn according to the chemical mechanical polishing method of any one of claims 1 to 4; a longitudinal guide rail is arranged on the outer side of the polishing disc, and the first polishing assembly is connected to the longitudinal guide rail in a sliding mode; and the lateral part of the longitudinal guide rail is vertically provided with a transverse guide rail, and the second polishing assembly is connected to the transverse guide rail in a sliding manner.
6. The chemical mechanical polishing system of claim 5, wherein the first polishing assembly is vertically staggered from the cross-rail, the first polishing assembly being located on an underside of the cross-rail.
7. The chemical mechanical polishing system of claim 5, wherein the lateral guide is horizontally disposed on an upper side of the polishing pad, and has one end disposed on the longitudinal guide and the other end disposed on the auxiliary guide; the auxiliary guide rail is arranged opposite to the longitudinal guide rail.
8. The chemical mechanical polishing system of claim 5, wherein the polishing modules are arranged in pairs, the polishing modules are configured with wafer interaction devices arranged adjacent to each other, and the wafer transport module is arranged adjacent to the wafer interaction devices.
9. The chemical mechanical polishing system of claim 5, wherein adjacent polishing modules share a wafer interface.
10. The chemical mechanical polishing system of claim 5, further comprising a wafer buffering device disposed between the polishing unit and the cleaning unit, between the cleaning unit and the front end module, and/or inside the polishing unit to place the wafer of each unit module in the wafer buffering device.
11. The chemical mechanical polishing system of claim 5, wherein the longitudinal rail is disposed along a length direction of the polishing unit, and the polishing modules are arranged in at least one number along the length direction of the longitudinal rail.
12. The chemical mechanical polishing system of claim 11, wherein the polishing modules are arranged in at least one number along a length of the cross rail.
13. The chemical mechanical polishing system of claim 12, wherein the polishing modules are arranged in pairs along the length direction of the transverse rails, and a reinforcing structure parallel to the transverse rails is arranged between adjacent longitudinal rails.
CN202111629944.1A 2021-12-28 2021-12-28 Chemical mechanical polishing method and polishing system Active CN114454085B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111629944.1A CN114454085B (en) 2021-12-28 2021-12-28 Chemical mechanical polishing method and polishing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111629944.1A CN114454085B (en) 2021-12-28 2021-12-28 Chemical mechanical polishing method and polishing system

Publications (2)

Publication Number Publication Date
CN114454085A CN114454085A (en) 2022-05-10
CN114454085B true CN114454085B (en) 2022-09-30

Family

ID=81407710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111629944.1A Active CN114454085B (en) 2021-12-28 2021-12-28 Chemical mechanical polishing method and polishing system

Country Status (1)

Country Link
CN (1) CN114454085B (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5951373A (en) * 1995-10-27 1999-09-14 Applied Materials, Inc. Circumferentially oscillating carousel apparatus for sequentially processing substrates for polishing and cleaning
US6343975B1 (en) * 1999-10-05 2002-02-05 Peter Mok Chemical-mechanical polishing apparatus with circular motion pads
JP2001274217A (en) * 2000-03-23 2001-10-05 Tokyo Seimitsu Co Ltd Wafer polishing apparatus
WO2004095516A2 (en) * 2003-04-21 2004-11-04 Inopla Inc. Apparatus and method for polishing semiconductor wafers using one or more polishing surfaces
TWI358382B (en) * 2008-08-01 2012-02-21 Zhen Ding Technology Co Ltd Substrate transferring system and substrate transf
KR101170760B1 (en) * 2009-07-24 2012-08-03 세메스 주식회사 Substrate polishing apparatus
CN102211311B (en) * 2011-05-30 2013-03-27 清华大学 Chemical-mechanical polishing equipment
CN106737055A (en) * 2016-12-01 2017-05-31 天津华海清科机电科技有限公司 Chemical-mechanical polishing mathing and the polishing assembly for it
CN109037101A (en) * 2018-07-13 2018-12-18 清华大学 Wafer processing
CN209282182U (en) * 2019-01-10 2019-08-20 上海福赛特机器人有限公司 A kind of feeding device of wafer cassette
KR102262250B1 (en) * 2019-10-02 2021-06-09 세메스 주식회사 Apparatus for treating substrate and method for treating substrate
CN111524833B (en) * 2020-04-28 2023-04-21 华海清科股份有限公司 Chemical mechanical polishing system and chemical mechanical polishing method
CN214393774U (en) * 2021-02-03 2021-10-15 华海清科股份有限公司 Flexible membrane for chemical mechanical polishing, bearing head and polishing equipment

Also Published As

Publication number Publication date
CN114454085A (en) 2022-05-10

Similar Documents

Publication Publication Date Title
US9643220B2 (en) Substrate processing method for transferring a substrate
KR100917304B1 (en) Substrate processing apparatus
US6309279B1 (en) Arrangements for wafer polishing
CN216298969U (en) Modular polishing system
CN111524833B (en) Chemical mechanical polishing system and chemical mechanical polishing method
TWI731281B (en) Grinding loading and unloading component module containing movable loading and unloading module and wafer transmission method thereof
KR20090063355A (en) Bonding apparatus for semiconductor chip and bonding method for semiconductor chip using the same
CN110970323A (en) Substrate processing device and processing system
CN114454085B (en) Chemical mechanical polishing method and polishing system
CN208744518U (en) A kind of polishing handling parts module comprising moving handling module
CN212240554U (en) Chemical mechanical polishing system
KR100902177B1 (en) Carousel rotating type cmp apparatus
US6623344B2 (en) Wafer polishing apparatus
KR102584030B1 (en) One-of-a-kind polishing loading and unloading assembly modules
KR101591957B1 (en) Substrate treating apparatus and substrate treating method
CN213378293U (en) Plasma cleaning machine
US20220297259A1 (en) System and method for exchanging polish plate
US6494768B2 (en) Wafer polishing apparatus
CN217426692U (en) Chemical mechanical polishing system
CN204596757U (en) Carry out the multi-step cleaning device of the wafer of cmp operation
JP2001274217A (en) Wafer polishing apparatus
CN221020493U (en) Chemical mechanical polishing system
WO2013073202A1 (en) Polishing system
CN114425742B (en) Distributed cleaning device
KR101360611B1 (en) Apparatus for exchanging wafer tray and the method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant