CN217426692U - Chemical mechanical polishing system - Google Patents

Chemical mechanical polishing system Download PDF

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Publication number
CN217426692U
CN217426692U CN202221496329.8U CN202221496329U CN217426692U CN 217426692 U CN217426692 U CN 217426692U CN 202221496329 U CN202221496329 U CN 202221496329U CN 217426692 U CN217426692 U CN 217426692U
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wafer
unit
cleaning unit
chemical mechanical
mechanical polishing
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甄辉
王同庆
赵德文
张国铭
路新春
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Huahaiqingke Co Ltd
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Huahaiqingke Co Ltd
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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The utility model discloses a chemical mechanical polishing system, it includes: a front unit; a polishing unit; the cleaning unit is arranged between the prepositive unit and the polishing unit; the cleaning unit comprises a first cleaning unit and a second cleaning unit which are arranged at two sides of the wafer transmission channel; the first cleaning unit and the second cleaning unit comprise a plurality of wafer post-processing modules, and the wafer post-processing modules are arranged around the wafer transmission manipulator.

Description

Chemical mechanical polishing system
Technical Field
The utility model belongs to the technical field of the chemical mechanical polishing, particularly, relate to a chemical mechanical polishing system.
Background
The integrated circuit industry is the core of the information technology industry and plays a key role in the process of upgrading the boosting manufacturing industry to digitalization and intellectualization transformation. The chip is a carrier of an integrated circuit, and the chip manufacturing relates to the process flows of integrated circuit design, wafer manufacturing, wafer processing, electrical property measurement, cutting packaging, testing and the like. Wherein, the chemical mechanical polishing belongs to one of five core processes in the wafer manufacturing process.
Chemical Mechanical Polishing (CMP) is a globally planarized ultra-precise surface processing technique that performs Polishing operations in a CMP system. CMP systems typically include a pre-stage unit, a polishing unit, and a cleaning unit to achieve "dry in and dry out" of the wafer to obtain a wafer with surface uniformity that meets process requirements.
Since the CMP system is operated in the Fab, the lateral and vertical dimensions of the CMP system are directly related to the inventory of semiconductor equipment in the Fab, which puts higher demands on the design of the CMP system.
The layout of components in the existing CMP system is compact, especially for a cleaning unit, so that the space for maintaining and maintaining equipment is compressed, and the use convenience of the CMP system is influenced to a certain extent. Since the component layout of a CMP system is too compact, once an alarm (alarm) occurs, it is necessary to shut down and disassemble the peripheral components to create space for equipment maintenance and repair, affecting the efficiency of alarm or troubleshooting.
In addition, in the conventional CMP system, there is a certain waiting time for the wafer to be transferred among the front unit, the polishing unit and the cleaning unit, so that wph (wafers Per hour) of the CMP system is reduced.
How to take into account factors such as production efficiency, overall size, maintenance and repair space, manufacturing cost and the like, and reasonably set the layout of each component in the CMP system becomes a technical problem that needs to be solved urgently by technical personnel in the field.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a chemical mechanical polishing system aims at solving one of the technical problem that exists among the prior art at least.
The embodiment of the utility model provides a chemical mechanical polishing system, include:
a front unit;
a polishing unit;
the cleaning unit is arranged between the prepositive unit and the polishing unit;
the cleaning unit comprises a first cleaning unit and a second cleaning unit which are arranged at two sides of the wafer transmission channel; the first cleaning unit and the second cleaning unit comprise a plurality of wafer post-processing modules, and the wafer post-processing modules are arranged around the wafer transmission manipulator.
In one embodiment, the wafer transfer passage is disposed along a length direction of the cleaning unit so that the wafer is transferred between the front unit and the polishing unit.
In one embodiment, the wafer post-processing module includes at least one drying module, and the at least one drying module is disposed adjacent to the pre-stage unit.
In one embodiment, the wafer post-processing modules are arranged along the length and width directions of the cleaning unit.
In one embodiment, a slide rail is arranged at the bottom of the wafer transmission manipulator and is arranged along the width direction of the cleaning unit; the wafer transmission manipulator can move along the slide rail so as to transmit the wafers in the first cleaning unit and the second cleaning unit.
In one embodiment, at least one drying module arranged adjacent to the front unit is provided with two or more pick-and-place ports, wherein one pick-and-place port is arranged towards the front unit.
In one embodiment, the wafer transfer passage is provided with a horizontal transfer mechanism to transfer the wafer of the front unit toward the polishing unit.
In one embodiment, the wafer transmission channel is further configured with a buffer mechanism disposed adjacent to the polishing unit.
In one embodiment, the horizontal transfer mechanism is configured with a mobile station, and wafers of the mobile station are directly transferred to the buffer mechanism.
In one embodiment, the buffer mechanism is movable along the wafer transport path.
In one embodiment, the wafer transmission channel is provided with a fixed station, a turnover mechanical arm and a buffer mechanism, wherein the fixed station is arranged adjacent to the front unit, the buffer mechanism is arranged adjacent to the polishing unit, and the turnover mechanical arm is arranged between the fixed station and the buffer mechanism; and the wafers are transmitted between the fixed table and the caching mechanism through the turnover manipulator.
In one embodiment, the wafer post-processing modules are arranged on two sides of the wafer transmission manipulator along the width direction of the cleaning unit, and the number of the wafer post-processing modules in each row is at least one.
In one embodiment, the number of the wafer post-processing modules in each row is two, and the wafer post-processing modules at least comprise a cleaning module and a drying module.
In one embodiment, the wafer post-processing module comprises a wafer horizontal processing module and/or a wafer vertical processing module.
In one embodiment, the wafer transfer robot is movable to the other side of the wafer transfer passage via the lower side of the horizontal transfer mechanism.
The beneficial effects of the utility model include:
a. the first cleaning unit and the second cleaning unit of the cleaning unit are arranged on two sides of the wafer transmission channel, and the first cleaning unit and the second cleaning unit can independently complete the post-processing process of the wafer, so that the fault tolerance of the cleaning unit is effectively improved; meanwhile, the configuration of the cleaning unit which operates independently is also beneficial to enhancing the capability of mutual cooperation of polishing and cleaning;
b. the wafer post-processing module of the cleaning unit is arranged around the wafer transmission manipulator, so that an operator can enter the machine station through the side part of the cleaning unit to carry out operations such as maintenance and repair, and the like, and the improvement of the convenience of the operation of the CMP system is facilitated;
c. the wafer transmission mechanical arm is arranged on the lower side of the horizontal transmission mechanism and can move along the width direction of the cleaning unit, so that the convenience of equipment maintenance is improved.
Drawings
The advantages of the present invention will become more apparent and more readily appreciated from the detailed description given herein below, taken in conjunction with the accompanying drawings, which are given by way of illustration only, and which do not limit the scope of the invention, and in which:
FIG. 1 is a schematic view of a chemical mechanical polishing system provided by an embodiment of the present invention;
FIG. 2 is a perspective view of the wash unit of FIG. 1;
fig. 3 is a schematic diagram of a wafer post-processing module according to an embodiment of the present invention;
fig. 4 is a schematic view of a horizontal transfer mechanism according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a cache mechanism according to an embodiment of the present invention;
FIG. 6 is a partial transmission line diagram of a wafer in a chemical mechanical polishing system;
FIG. 7 is a schematic view of a chemical mechanical polishing system according to yet another embodiment of the present invention;
fig. 8 is a schematic view of a chemical mechanical polishing system according to yet another embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are provided to illustrate the concepts of the present invention; the description is intended to be illustrative and exemplary in nature, and is not to be construed as limiting the embodiments of the invention or the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of the respective portions and the mutual relationships thereof. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly illustrate the structure of the various elements of the embodiments of the invention.
In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and wafers (Wafer, W) are also referred to as substrates (Substrate), and their meanings and practical effects are equivalent.
Embodiments of the present disclosure generally relate to CMP systems used in the semiconductor device manufacturing industry. FIG. 1 is a schematic diagram of a chemical mechanical polishing system 100 according to one embodiment of the present invention, which includes:
a front unit 10;
a polishing unit 30;
and a cleaning unit 20 disposed between the pre-unit 10 and the polishing unit 30.
In the chemical mechanical polishing, first, the wafer enters the polishing unit 30 from the front unit 10 to be chemically and mechanically polished. Specifically, during chemical mechanical polishing, polishing solution composed of submicron or nanometer abrasive particles and chemical solution flows between a wafer and a polishing pad, the polishing solution is uniformly distributed under the action of transmission and rotating centrifugal force of the polishing pad to form a layer of liquid film between the wafer and the polishing pad, chemical components in the liquid and the wafer generate chemical reaction to convert insoluble substances into soluble substances, then the chemical reactants are removed from the surface of the wafer through micro-mechanical friction of the abrasive particles and dissolved in the flowing liquid to be taken away, namely surface materials are removed in an alternating process of chemical film forming and mechanical film removing to realize surface planarization, so that the aim of global planarization is fulfilled.
Then, the wafer enters a cleaning unit 20 for wafer cleaning and wafer drying; specifically, wafer cleaning includes, but is not limited to, megasonic cleaning, roller brush cleaning, non-contact rinsing, and the like; wafer drying includes, but is not limited to, spin drying, marangoni pull drying, etc. to obtain a clean surface wafer.
Finally, the wafer is transferred to the front unit 10 again, and the material of the wafer is removed in a dry-in dry-out manner, so that the wafer meeting the process requirements is obtained.
In fig. 1, the cleaning unit 20 includes a first cleaning unit 21 and a second cleaning unit 22, wherein the first cleaning unit 21 and the second cleaning unit 22 are respectively disposed at two sides of the wafer transfer passage 23.
Further, a wafer transfer passage 23 is provided along the length direction of the cleaning unit 20 so that the wafer is transferred between the front unit 10 and the polishing unit 30. In the present invention, the length direction of the cleaning unit 20 is the length direction of the CMP system, and the width direction of the cleaning unit 20 is the width direction of the CMP system.
In the embodiment shown in fig. 1, the first cleaning unit 21 includes a plurality of wafer post-processing modules, such as a wafer post-processing module 21A, a wafer post-processing module 21B, a wafer post-processing module 21C, and a wafer post-processing module 21D, which are disposed around the wafer transfer robot 24. That is, the wafer transfer robot 24 can dispatch the wafer in any one of the wafer post-processing modules in the first cleaning unit 21. In other words, the wafer transfer robot 24 may transfer wafers between the various wafer post-processing modules to complete the cleaning and drying of the wafers in accordance with the post-processing process.
More importantly, in the first cleaning unit 21 and the second cleaning unit 22, wafer post-processing modules are disposed at two sides of the wafer transfer robot 24, and no substrate post-processing module is disposed at the other two sides. An operator can enter and perform maintenance, etc. operations through the side of the cleaning unit 20.
Further, a slide rail 24a is provided at the bottom of the wafer transfer robot 24. The slide rail 24a is provided along the width direction of the wash unit 20. With this arrangement, the wafer transfer robot 24 can move along the longitudinal direction of the slide rail 24a to move inside the first cleaning unit 21, thereby realizing the transfer scheduling of the wafer.
In fig. 1, similar to the first cleaning unit 21, the second cleaning unit 22 is disposed at the other side of the wafer transfer passage 23, and the first cleaning unit 21 and the second cleaning unit 22 can independently perform a post-processing process on the wafer. The second cleaning unit 22 is also provided with a wafer transfer robot 24 in which wafer post-processing modules are also disposed around the wafer transfer robot 24. That is, the wafer transfer robot 24 provided in the second cleaning unit 22 is provided on the other side of the wafer transfer passage 23, and a slide rail 24a provided in the width direction of the cleaning unit 20 is also arranged on the bottom of the wafer transfer robot 24.
It is understood that the slide rail 24a may be disposed at a side portion of the wafer transfer robot 24, or the slide rail 24a may be disposed at a top portion of the corresponding frame of the cleaning unit 20. As long as the slide rail 24a is provided along the width direction of the cleaning unit 20, the wafer can be transferred in a freely scheduled manner.
In order to improve the cleaning capability of the CMP system and match the throughput and the tact of the cleaning unit 20 and the polishing unit 30, the wafer post-processing modules are arranged in the length and width directions of the cleaning unit 20. In fig. 1, the wafer post-processing modules are arranged at both sides of the wafer transfer robot 24 in the width direction of the cleaning unit 20, and the number of the wafer post-processing modules in each row is two. The wafer post-processing module at least comprises a cleaning module and a drying module so as to complete the post-processing process of the wafer and obtain the wafer with a clean surface.
As a variation of the embodiment of fig. 1, the wafer post-processing modules are arranged on both sides of the wafer transfer robot 24 in the width direction of the cleaning unit 20, and the number of the wafer post-processing modules in each row may be one. I.e., at least one wafer post-processing module is required to be arranged in each row.
In the embodiment shown in fig. 1, the wafer post-processing module includes at least one drying module to dry the surface of the wafer. And, at least one drying module is disposed adjacent to the front unit 10. In this way, the Front robot 11 in the Front end unit 10 can directly transfer the wafer having been subjected to the drying process to a Front Opening Unified Pod (FOUP) 12.
Fig. 2 is a perspective view of the cleaning unit 20 corresponding to fig. 1, wherein the first cleaning unit 21 and the second cleaning unit 22 are respectively disposed at two sides of the wafer transfer passage 23; and the wafer post-processing modules in the first cleaning unit 21 and the second cleaning unit 22 are disposed around the wafer transfer robot 24 in the transverse and longitudinal directions. The wafer post-processing module 21D in the first cleaning unit 21 is a drying module, so that the front robot 11 can conveniently transfer the dried wafer to the foup 12.
The utility model discloses in, the at least two getting that show of figure 3 of dry module configuration put mouthful 21D-1, wherein, at least one is got and is put mouthful 21D-1 and set up towards leading unit 10 to make things convenient for leading manipulator 11 that figure 1 shows to get into dry module through getting to put mouthful 21D-1, in order to snatch the wafer that accomplishes the drying and place it in open wafer transport box 12 before.
FIG. 3 is a schematic view of a wafer post-processing module 21D, wherein a side plate of the particular wafer post-processing module 21D is hidden in order to better embody that at least two pick-and-place ports 21D-1 are configured thereon. In FIG. 3, the wafer post-processing module 21D is provided with a pick-and-place port 21D-1 on the side thereof adjacent to the front unit 10, and a pick-and-place port 21D-1 on the corresponding side thereof. With such an arrangement, the wafer transmission robot 24 shown in fig. 1 can conveniently place the wafer in the wafer post-processing module 21D, and after the wafer post-processing is completed, the front-end robot 11 shown in fig. 1 transports the wafer to the front-open type foup 12.
In the embodiment shown in fig. 1, the wafer post-processing modules of the cleaning unit 20 are of a modular design, and each wafer post-processing module is provided with an independent gas-liquid path and an electric control device, so as to facilitate the overall assembly and disassembly, and improve the assembly and disassembly efficiency of the cleaning unit of the CMP system.
In fig. 1, the wafer post-processing module in the cleaning unit 20 is a wafer horizontal processing module, i.e. the wafer is arranged in a horizontal direction, so that the robot can conveniently take and place the wafer from the side of the wafer post-processing module, and is not limited to the top of the wafer post-processing module, so as to control the vertical height of the cleaning unit 20.
It is understood that the wafer post-processing module in the cleaning unit 20 may also be a wafer vertical processing module, or a combination of a wafer horizontal processing module and a wafer vertical processing module, as long as the turnover and transmission of the wafer are reasonably distributed, and the waiting time of the turnover of the wafer is minimized.
In the embodiment shown in fig. 1, a horizontal transfer mechanism 25 is disposed on the wafer transfer passage 23 to transfer the wafer of the front unit 11 toward the polishing unit 30.
In the embodiment shown in fig. 2, the wafer transfer robot 24 is located below the horizontal transfer mechanism 25. Specifically, the top of the wafer transfer robot 24 is located below the bottom surface of the horizontal transfer mechanism 25. That is, the wafer transfer robot 24 may be moved toward the wafer transfer passage 23 as much as possible, and even the wafer transfer robot 24 may be partially moved to the lower side of the horizontal transfer mechanism 25. Maintenance, inspection and/or repair operations may be performed by an operator from the side of the cleaning unit 20 to improve the ease of operation of the CMP system.
Fig. 4 is a schematic structural diagram of the horizontal transfer mechanism 25, wherein the horizontal transfer mechanism 25 includes a linear module 25a and a movable stage 25b, and the movable stage 25b is used for carrying a wafer and is slidably connected to the linear module 25 a. That is, the front-end robot 11 places the wafer on the movable stage 25b, and the movable stage 25b can move toward the polishing unit 30 to transfer the wafer.
In fig. 1, the wafer transfer passage 23 is further provided with a buffer mechanism 26, and the buffer mechanism 26 is disposed adjacent to the polishing unit 30 to buffer the wafers to be processed or the processed wafers.
Fig. 5 is a schematic structural diagram of the buffer mechanism 26, and the buffer mechanism 26 includes a support seat 26a, and a support frame 26b is disposed on an upper portion of the support seat 26 a. The supporting frames 26b are arranged at intervals along the vertical direction of the supporting base 26a, so as to buffer a plurality of wafers at the same time.
In the embodiment shown in fig. 1, the setting height of the horizontal transfer mechanism 25 is matched with the setting height of the buffer storage mechanism 26, so that the moving stage 25b of the horizontal transfer mechanism 25 can directly move the wafer to the inside of the supporting base 26a and is limited by the supporting frame 26b, thereby improving the efficiency of wafer transfer.
In fig. 5, a slide table 26c is further provided at the bottom of the buffer mechanism 26, and the support base 26a is slidably connected to the slide table 26 c. In the embodiment shown in fig. 1, the slide table 26c is provided along the length direction of the wafer transfer passage 23 so that the buffer mechanism 26 can move between the cleaning unit 20 and the polishing unit 30.
The buffer mechanism 26 can move in the horizontal direction, which can reduce the arrangement of the wafer transfer mechanism in the cleaning unit 20 and the polishing unit 30, and reduce the manufacturing cost of the CMP system. Specifically, when the buffer mechanism 26 is moved toward the position of the cleaning unit 20, the linear module 25a of the horizontal transfer mechanism 25 does not need to be configured to be excessively long. Accordingly, when the buffer mechanism 26 moves toward the position of the polishing unit 30, the polishing unit 30 can acquire the wafer to be polished from the buffer mechanism 26.
Fig. 6 shows a local transmission route diagram corresponding to the front end unit 10, the polishing unit 30 and the cleaning unit 20, and the wafer transmission process is briefly described below with reference to fig. 6:
first, the wafer of the front unit 10 is placed on the movable stage 25b of the horizontal transfer mechanism 25 by the front robot 11, and the wafer placed on the movable stage 25b moves toward the buffer mechanism 26 to be received and buffered by the support frame 26b of the buffer mechanism 26;
then, the polishing unit 30 obtains the wafer from the buffer mechanism 26, and the chemical mechanical polishing is completed in the polishing unit 30; specifically, the buffer mechanism 26 needs to move toward the polishing unit 30, so that the polishing unit 30 can conveniently and quickly obtain the wafer to be polished;
then, the polishing unit 30 places the polished wafer in the buffer mechanism 26, and the buffer mechanism 26 moves towards the direction of the front unit 10, so that the wafer is placed in the wafer post-processing module by the wafer transmission manipulator 24 in the unit to be cleaned 20;
then, the wafer transfer robot 24 turns the wafer inside the cleaning unit 20 to clean the dry wafer according to the post-processing process;
finally, the wafer having completed the post-processing is carried by the front robot 11 to the front opening unified pod 12 in the front loading unit 10.
Fig. 6 shows only one transfer path of the wafer in the first cleaning unit 21. It is understood that the transmission path of the wafer in the cleaning unit 20 is not strictly defined, and the cleaning process and the drying process are performed first. Therefore, the layout of the cleaning module and the drying module in the cleaning unit 20 is relatively free, and can be flexibly adjusted according to the process requirements or the structure size, thereby effectively improving the freedom degree of the erection and splicing of the cleaning unit in the CMP system.
In the embodiment shown in fig. 1, the wafer can be transferred directly to the buffer mechanism 26 by the horizontal transfer mechanism 25. As a variation of the embodiment of fig. 1, the wafer transfer robot 24 in the cleaning unit 20 may also place the wafer carried by the movable stage 25b in the buffer mechanism 26. In a variant embodiment, the length of the horizontal transfer mechanism 25 does not need to be set too long, and the moving table 25b on the horizontal transfer mechanism 25 moves a certain distance along the wafer transfer path 23 as long as the gripping range of the wafer transfer robot 24 is reached.
Fig. 7 shows another embodiment of the present invention, in which the wafer transfer robots 24 disposed inside the first cleaning unit 21 and the second cleaning unit 22 share the same slide rail 24a, compared to the embodiment shown in fig. 1. In fig. 7, the wafer transfer robot 24 is also located at the lower side of the horizontal transfer mechanism 25, so that the wafer transfer robot 24 can be moved integrally from the first cleaning unit 21 to the second cleaning unit 22 to provide a sufficient working space for maintenance and repair.
Fig. 8 is a schematic diagram of an embodiment of the chemical mechanical polishing system of the present invention, wherein the arrangement of the components on the wafer transfer channel 23 is different from that of the embodiment shown in fig. 1. Specifically, the wafer transfer path 23 is provided with a fixed stage 28, a turnaround robot 27, and a buffer mechanism 26. The fixed table 28 is disposed adjacent to the front unit 10, the buffer mechanism 26 is disposed adjacent to the polishing unit 30, and the revolving robot 27 is disposed between the fixed table 28 and the buffer mechanism 26.
The wafer can thus be transferred between the fixed stage 28 and the buffer mechanism 26 by the turnaround robot 27. Specifically, the front robot 11 of the front unit 10 places the wafer on the fixed stage 28, and the revolving robot 27 transfers the wafer on the fixed stage 28 to the buffer mechanism 26. The placement of the transfer robot 27 in the cleaning unit 20 balances the adjustments made by the wafer transfer robot 24 in the cleaning unit 20 and coordinates the production cycle times of the cleaning unit 20 and polishing unit 30 in the CMP system.
Further, the transferring robot 27 may be hung on the top of the cleaning unit 20 corresponding to the rack, and the grip arm on the transferring robot 27 is disposed toward the lower side, so as to prevent the transferring robot 27 from interfering with the wafer transfer robot 24 in the cleaning unit 20.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (15)

1. A chemical mechanical polishing system, comprising:
a front unit;
a polishing unit;
the cleaning unit is arranged between the prepositive unit and the polishing unit;
the cleaning unit comprises a first cleaning unit and a second cleaning unit which are arranged at two sides of the wafer transmission channel; the first cleaning unit and the second cleaning unit comprise a plurality of wafer post-processing modules, and the wafer post-processing modules are arranged around the wafer transmission manipulator.
2. The chemical mechanical polishing system of claim 1, wherein the wafer transfer passage is disposed along a length of the cleaning unit such that the wafer is transferred between the front unit and the polishing unit.
3. The chemical mechanical polishing system of claim 1, wherein the wafer post-processing module comprises at least one drying module, and wherein the at least one drying module is disposed adjacent to the pre-stage unit.
4. The chemical mechanical polishing system of claim 1, wherein the wafer post-processing modules are arranged along a length and a width of the cleaning unit.
5. The chemical mechanical polishing system of claim 1, wherein a slide rail is disposed at a bottom of the wafer transfer robot, the slide rail being disposed along a width direction of the cleaning unit; the wafer transmission manipulator can move along the slide rail so as to transmit the wafers in the first cleaning unit and the second cleaning unit.
6. The chemical mechanical polishing system of claim 1, wherein at least one drying module disposed adjacent to the front unit is configured with two or more access ports, one of which is disposed toward the front unit.
7. The chemical mechanical polishing system of claim 1, wherein the wafer transfer passage is configured with a horizontal transfer mechanism to transfer the wafer of the front unit toward the polishing unit.
8. The chemical mechanical polishing system of claim 7, wherein the wafer transfer passage is further configured with a buffer mechanism disposed adjacent to the polishing unit.
9. The chemical mechanical polishing system of claim 8, wherein the horizontal transfer mechanism is configured with a mobile station, and wafers from the mobile station are transferred directly to the buffer mechanism.
10. The chemical mechanical polishing system of claim 8, wherein the buffer mechanism is movable along the wafer transport path.
11. The chemical mechanical polishing system of claim 1, wherein the wafer transfer passage is configured with a stationary platen, a turnaround robot, and a buffer mechanism, the stationary platen being disposed adjacent to the front unit, the buffer mechanism being disposed adjacent to the polishing unit, the turnaround robot being disposed between the stationary platen and the buffer mechanism; and the wafer is transmitted between the fixed table and the caching mechanism through the turnover manipulator.
12. The chemical mechanical polishing system of claim 4, wherein the wafer post-processing modules are arranged on both sides of the wafer transfer robot in a width direction of the cleaning unit, and the number of the wafer post-processing modules per row is at least one.
13. The chemical mechanical polishing system of claim 12, wherein the number of wafer post-processing modules in each row is two, and the wafer post-processing modules comprise at least one cleaning module and a drying module.
14. The chemical mechanical polishing system of claim 1, wherein the wafer post-processing module comprises a wafer horizontal processing module and/or a wafer vertical processing module.
15. The chemical mechanical polishing system of claim 7, wherein the wafer transfer robot is movable to the other side of the wafer transfer passage via the lower side of the horizontal transfer mechanism.
CN202221496329.8U 2022-06-16 2022-06-16 Chemical mechanical polishing system Active CN217426692U (en)

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CN202221496329.8U CN217426692U (en) 2022-06-16 2022-06-16 Chemical mechanical polishing system

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