CN102211311B - Chemical-mechanical polishing equipment - Google Patents
Chemical-mechanical polishing equipment Download PDFInfo
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- CN102211311B CN102211311B CN 201110143089 CN201110143089A CN102211311B CN 102211311 B CN102211311 B CN 102211311B CN 201110143089 CN201110143089 CN 201110143089 CN 201110143089 A CN201110143089 A CN 201110143089A CN 102211311 B CN102211311 B CN 102211311B
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- 238000005498 polishing Methods 0.000 title claims abstract description 270
- 230000007704 transition Effects 0.000 claims abstract description 50
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 71
- 239000012530 fluid Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 abstract description 140
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012467 final product Substances 0.000 description 4
- 230000009189 diving Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses chemical-mechanical polishing equipment, which comprises a plurality of chemical-mechanical polishing machines, a manipulator and a transition device, wherein the chemical-mechanical polishing machines are respectively used for polishing wafers; the manipulator is used for conveying the wafers; the transition device is used for holding the wafers; the chemical-mechanical polishing machines and the transition device are arranged around the manipulator so that the manipulator can convey the unpolished wafers on the transition device to the chemical-mechanical polishing machines, convey the polished wafers to the transition device from the chemical-mechanical polishing machines, and convey the wafers among the chemical-mechanical polishing machines. The chemical-mechanical polishing equipment in the embodiment of the invention has the advantage of high working efficiency.
Description
Technical field
The present invention relates to a kind of chemical-mechanical polisher.
Background technology
In the production process of large scale integrated circuit, very high to the flatness requirement of wafer.At present, realize the planarization of wafer by utilizing chemically mechanical polishing (CMP) technique, and chemical-mechanical polishing mathing is the capital equipment of finishing CMP process.Existing polissoir adopts the linear structure of rotating disc type four rubbing heads, three polishing disk structures or single-deck single head.
In rotating disc type four rubbing heads three polishing disk structures, this carousel supports four rubbing head rotations, and works between different stations.This rotating disk weight is large, complex structure, and precision prescribed is high, makes difficulty, and cost is high, and the rubbing head on four cantilevers influences each other, if a rubbing head or its wafer that carries go wrong, other three rubbing heads must quit work, so inefficiency.And each rubbing head on the rotating disk is when wafer load/unload stations pick-and-place wafer, and rubbing head and wafer load/unload stations need accurately contraposition, so require also very high to the control accuracy of rotating disk.
In single-deck single head linear structure, do not interfere with each other between each polishing unit, shut down one of them polishing unit, and other polishing unit can continue to finish the work, and shuts down after finishing.But the production efficiency of polissoir with single-deck single head linear structure is low, and the transmission range between wafer is large, and the transmission time is long.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in the prior art.
For this reason, one object of the present invention is to propose a kind of chemical-mechanical polisher of high efficiency.
To achieve these goals, propose a kind of chemical-mechanical polisher according to embodiments of the invention, described chemical-mechanical polisher comprises: a plurality of chemical-mechanical polishing mathings, and described a plurality of chemical-mechanical polishing mathings are respectively applied to wafer polishing; Manipulator, described manipulator are used for the carrying wafer; And transition apparatus, described transition apparatus is used for placing wafer, and wherein said a plurality of chemical-mechanical polishing mathings and described transition apparatus are arranged so that described manipulator is transported to the not wafer polishing on the described transition apparatus on the described chemical-mechanical polishing mathing and the wafer after will polishing is transported on the described transition apparatus and between described a plurality of chemical-mechanical polishing mathings from described chemical-mechanical polishing mathing and carries wafer around described manipulator.
According to the chemical-mechanical polisher of the embodiment of the invention, by described transition apparatus and described a plurality of chemical-mechanical polishing mathing are arranged around described manipulator, thereby can reduce widely the transmission range of wafer, and reduce widely the transmission time of wafer.And described a plurality of chemical-mechanical polishing mathings can polish wafer independently, and when one of them chemical-mechanical polishing mathing was shut down, other described chemical-mechanical polishing mathing can be proceeded polishing.Therefore, the advantage that has high efficiency according to the chemical-mechanical polisher of the embodiment of the invention.
In addition, the chemical-mechanical polisher according to the embodiment of the invention can have following additional technical characterictic:
According to one embodiment of present invention, described manipulator is a kind of in single armed manipulator, dual-arm robot and the four arm manipulators, and wherein said manipulator comprises pedestal and is installed in arm on the described pedestal.
According to one embodiment of present invention, each described chemical-mechanical polishing mathing comprises: workbench; Polishing disk, described polishing disk are installed on the upper surface of described workbench; Trimmer and polishing fluid conveyer, described trimmer and described polishing fluid conveyer are installed in respectively on the upper surface of described workbench and contiguous described polishing disk; The rubbing head support, described rubbing head support is installed on the upper surface of described workbench; Loading/unloading platform, described loading/unloading platform are installed on the upper surface of described workbench and are positioned at a side of the described pedestal of vicinity of described workbench; And rubbing head, described rubbing head is rotatable and be installed in movably on the described rubbing head support between described polishing disk and the described loading/unloading platform.
According to one embodiment of present invention, the working face of a plurality of loading/unloading platforms of described a plurality of chemical-mechanical polishing mathings is on the same level face.The described arm of described like this manipulator need to be mobile at the axial direction (being above-below direction) of described pedestal, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer.
According to one embodiment of present invention, a plurality of loading/unloading platforms of described a plurality of chemical-mechanical polishing mathings are identical with distance between the described pedestal.The described arm of described like this manipulator need to be at described pedestal mobile in the radial direction, thereby can reduce further the transmission range of wafer and reduce transmission time of wafer.
According to one embodiment of present invention, the working face of the loading/unloading platform of each described chemical-mechanical polishing mathing is circular, and the center of circle of a plurality of described working faces of wherein said a plurality of loading/unloading platforms is distributed in point on the center line of described pedestal on the circumference in the center of circle.
According to one embodiment of present invention, described transition apparatus is transition platform.
According to one embodiment of present invention, described transition platform comprises the first platform and the second platform, described the first platform has be used to first placed side of placing wafer polishing not and described the second platform and has for second placed side of placing the wafer after the polishing, a plurality of working faces of wherein said the first placed side, described the second placed side and described a plurality of loading/unloading platforms are on the same level face, and described the first platform, described the second platform and described a plurality of loading/unloading platform are identical with distance between the described pedestal.The described arm of described like this manipulator need to be at the axial direction (being on the above-below direction) of described pedestal and is moved in the radial direction, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer.
According to one embodiment of present invention, described the first placed side and described the second placed side are circle, the working face of the loading/unloading platform of each described chemical-mechanical polishing mathing is circular, and the center of circle of the center of circle of the center of circle of wherein said the first placed side, described the second placed side and a plurality of described working faces of described a plurality of loading/unloading platforms is distributed in point on the center line of described pedestal on the circumference in the center of circle.
According to one embodiment of present invention, described loading/unloading platform is three, described manipulator is four arm manipulators, described four arm manipulators have pedestal and four arms that are rotatably installed on the described pedestal and across is arranged, described four arms are scalable and axially movable along pedestal along the radial direction of described pedestal, radially relative along described circumference of two described loading/unloading platforms wherein, another described loading/unloading platform and described the first platform are radially relative along described circumference.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the schematic diagram of the chemical-mechanical polishing mathing of chemical-mechanical polisher according to an embodiment of the invention;
Fig. 2 is the schematic diagram of chemical-mechanical polisher according to an embodiment of the invention;
Fig. 3 is the top view of Fig. 2;
Fig. 4 is the schematic diagram of chemical-mechanical polisher according to another embodiment of the present invention;
Fig. 5 is the schematic diagram of chemical-mechanical polisher according to yet another embodiment of the invention;
Fig. 6 is the schematic diagram according to the chemical-mechanical polisher of further embodiment of this invention;
Fig. 7 is the structural representation of the chemical-mechanical polisher of another embodiment again according to the present invention.
The specific embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein identical or similar label represents identical or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " vertically ", " laterally ", " on ", orientation or the position relationship of the indications such as D score, 'fornt', 'back', " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward " be based on orientation shown in the drawings or position relationship, only be for convenience of description the present invention and simplified characterization, rather than indication or the hint device of indication or element must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used for describing purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, unless otherwise prescribed and limit, need to prove that term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly to link to each other, and also can indirectly link to each other by intermediary, for the ordinary skill in the art, can understand as the case may be the concrete meaning of above-mentioned term.
Below with reference to the chemical-mechanical polisher 10 of Fig. 1-7 description according to the embodiment of the invention.Shown in Fig. 1-7, chemical-mechanical polisher 10 according to the embodiment of the invention comprises a plurality of chemical-mechanical polishing mathings 100, manipulator 200 and transition apparatus 300, a plurality of chemical-mechanical polishing mathings 100 are respectively applied to wafer polishing, manipulator 200 is used for the carrying wafer, and transition apparatus 300 is used for placing wafer.Wherein, a plurality of chemical-mechanical polishing mathings 100 and transition apparatus 300 are arranged so that manipulator 200 is transported to the not wafer polishing on the transition apparatus 300 on the chemical-mechanical polishing mathing 100 and the wafer after will polishing is transported on the transition apparatus 300 from chemical-mechanical polishing mathing 100 around manipulator 200.
Chemical-mechanical polisher 10 according to the embodiment of the invention passes through transition apparatus 300 and a plurality of chemical-mechanical polishing mathing 100 are centered on manipulator 200 layouts, thereby can reduce widely the transmission range of wafer, and reduces widely the transmission time of wafer.And a plurality of chemical-mechanical polishing mathings 100 can polish wafer independently, and when one of them chemical-mechanical polishing mathing 100 was shut down, other chemical-mechanical polishing mathing 100 can be proceeded polishing.Therefore, chemical-mechanical polisher 10 has the advantage of high efficiency.
In some embodiments of the invention, described manipulator can be single armed manipulator or multi-arm manipulator (for example dual-arm robot, four arm manipulators), and wherein said manipulator can comprise pedestal 210 and the arm 220 that is installed on the pedestal 210.Shown in Fig. 2-4, manipulator 200 can be joint Manipulator, and wherein said joint Manipulator can comprise pedestal 210 and the arm 220 that is installed on the pedestal 210.The arm 220 of described joint Manipulator can grasp and carry wafer, and arm 220 can rotate centered by pedestal 210 and can stretch.
In a concrete example of the present invention, manipulator 200 can be the multi-arm manipulator, multi-arm joint Manipulator for example, wherein said multi-arm joint Manipulator can comprise pedestal 210 and be installed in a plurality of arms 220 on the pedestal 210, thereby can grasp simultaneously and carry a plurality of wafers.As shown in Figure 5 and Figure 6, manipulator 200 can be the joint Manipulator with two arms 220, and these two arms 220 can be installed on the pedestal 210 of joint Manipulator.
As shown in Figure 7, in examples more of the present invention, manipulator 200 can be four arm manipulators, described four arm manipulators can have pedestal 210 and be rotatably installed on the pedestal 210 and 220, four arms 220 of four arms that across is arranged can be along the radial direction of pedestal 210 scalable and can move along the axial direction of pedestal 210.Wherein, in Fig. 7, the radial direction of pedestal 210 is horizontal direction, and the axial direction of pedestal 210 is above-below direction (direction shown in the arrow A among Fig. 2).
As shown in Figure 1, in some embodiments of the invention, each chemical-mechanical polishing mathing 100 can comprise workbench 110, polishing disk 120, trimmer 130, polishing fluid conveyer 140, rubbing head support, loading/unloading platform 160 and rubbing head 170.Particularly, polishing disk 120 can be installed on the upper surface of workbench 110, and trimmer 130 and polishing fluid conveyer 140 can be installed in respectively on the upper surface of workbench 110 and contiguous polishing disk 120.Described rubbing head support can be installed on the upper surface of workbench 110, loading/unloading platform 160 can be installed on the upper surface of workbench 110 and can be positioned at the side of pedestal 210 of the contiguous manipulator 200 of workbench 110, namely loads and unloads platform 160 and can be located between pedestal 210 and the polishing disk 120.Rubbing head 170 can be rotatable and can be installed in movably on the described rubbing head support between polishing disk 120 and the loading/unloading platform 160.
Particularly, described rubbing head support can comprise horizontal base plate 151 and support side plate 152, horizontal base plate 151 can be formed with the groove 153 that connects at its thickness direction, and groove 153 can open wide at vertical end of horizontal base plate 151 and can extend towards the vertical other end of level.In other words, an end of groove 153 can open wide and the other end can seal.Support side plate 152 can link to each other with horizontal base plate 151 respectively and the both lateral sides that can lay respectively at groove 153 is used for support level substrate 151, wherein described vertical end of horizontal base plate 151 can extend beyond support side plate 152 in the vertical to consist of cantilever end, and described cantilever end can reach the top of polishing disk 120.
In a concrete example of the present invention, as shown in Figure 1, the upper end of support side plate 152 can link to each other with the bottom surface of horizontal base plate 151 respectively.Two horizontal base plates 151 can lay respectively at the both sides of groove 153 in the horizontal, and the left end of horizontal base plate 151 can extend longitudinally the left side that exceeds support side plate 152, thereby the left end of horizontal base plate 151 can consist of described cantilever end.The right-hand member of horizontal base plate 151 can extend support side plate 152, also can be concordant with them.Described rubbing head support is similar to the form of diving tower, therefore also can be called diving platform-type rubbing head support.The basal surface of support side plate 152 can be positioned on the same level face, when support side plate 152 is installed on the workbench 110 of chemical-mechanical polishing mathing 100, can guarantee horizontal base plate 151 levels thus.Particularly, horizontal base plate 151 can be U-shaped, and the blind end of groove 153 is arc.
As shown in Figure 1, in one embodiment of the invention, workbench 110 can be the general rectangular framework.Described rubbing head support can be installed on the workbench 110, and the described cantilever end of the horizontal base plate 151 of described rubbing head support can extend to polishing disk 120 above.Loading/unloading platform 160 can be installed on the upper surface of workbench 110 and can be below the described rubbing head support, between two support side plate 152.For example, the center of polishing disk 120 and loading/unloading platform 160 can be positioned on the longitudinal centre line of the groove 153 on the horizontal base plate 151.
In an example of the present invention, as shown in Figure 1, on the upper surface of horizontal base plate 151, can be provided with two parallel guide rails 154 in the both lateral sides of groove 153, rubbing head 170 can be supported on the guide rail 154 by bolster 155.Particularly, can be provided with slide block below bolster 155, described slide block can be supported on the guide rail 154 movably.Can be provided with drive motors 156 on bolster 155, the output shaft of drive motors 156 can link to each other by the rubbing head 170 of decelerator with bolster 155 belows, in order to drive rubbing head 170 rotations.Bolster 155 can be driven longitudinally by servomotor 157 and move and swing at guide rail 154, thereby makes rubbing head 170 can move to respectively polishing disk 120 tops and loading/unloading platform 160 tops.
Shown in Fig. 2-7, in some embodiments of the invention, the working face of a plurality of loading/unloading platforms 160 of a plurality of chemical-mechanical polishing mathings 100 can be on the same level face.Like this, when utilizing manipulator 200 between a plurality of chemical-mechanical polishing mathings 100, to carry wafer, the arm 220 of manipulator 200 need to be not mobile at the axial direction (being the above-below direction among Fig. 2-7) of pedestal 210, only need to be at pedestal 210 mobile and centered by pedestal 210, be rotated and get final product in the radial direction, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, further improve the operating efficiency of chemical-mechanical polisher 10.
In examples more of the present invention, shown in Fig. 2-7, a plurality of loading/unloading platforms 160 of a plurality of chemical-mechanical polishing mathings 100 can be identical with distance between the pedestal 210.In other words, pedestal 210 can be a fixed value with the distance of the loading/unloading platform 160 of each chemical-mechanical polishing mathing 100.Particularly, the working face of the loading/unloading platform 160 of each chemical-mechanical polishing mathing 100 can be circular, and wherein the center of circle of a plurality of described working faces of a plurality of loading/unloading platforms 160 can be distributed in point on the center line of pedestal 210 on the circumference in the center of circle.Like this, when utilizing manipulator 200 between a plurality of chemical-mechanical polishing mathings 100, to carry wafer, the arm 220 of manipulator 200 need to be at pedestal 210 mobile in the radial direction, only need to move at the axial direction of pedestal 210 and get final product as the center of circle is rotated take pedestal 210, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, further improve the operating efficiency of chemical-mechanical polisher 10.
Advantageously, described a plurality of working faces of a plurality of loading/unloading platforms 160 of a plurality of chemical-mechanical polishing mathings 100 can be on the same level face, and a plurality of loading/unloading platforms 160 of a plurality of chemical-mechanical polishing mathing 100 can be identical with distance between the pedestal 210.Like this, when utilizing manipulator 200 between a plurality of chemical-mechanical polishing mathings 100, to carry wafer, 220 needs of the arm of manipulator 200 are rotated as the center of circle take pedestal 210, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, further improve the operating efficiency of chemical-mechanical polisher 10.
Shown in Fig. 2-7, in some embodiments of the invention, transition apparatus 300 can be transition platform.Wherein, described transition platform can have the placed side 310 for placing wafer.In a concrete example of the present invention, such as Fig. 4 and shown in Figure 6, described transition platform can be provided with multilayer placed side 310, to place a plurality of wafers, wherein the placed side of 310 middle and upper parts, a plurality of placed side can be used for placing not wafer polishing, and the placed side of 310 middle and lower parts, a plurality of placed side can be used for placing the wafer after polishing.
In another concrete example of the present invention, such as Fig. 5 and shown in Figure 7, described transition platform can comprise the first platform 320 and the second platform 330, the first platform 320 can have be used to placing not the first placed side 321 of wafer polishing, and the second platform 330 can have for second placed side 331 of placing the wafer after the polishing.
Such as Fig. 2, Fig. 5 and shown in Figure 7, in some embodiments of the invention, a plurality of working faces of the first placed side 321, the second placed side 331 and a plurality of loading/unloading platform 160 can be on the same level face.Like this, when utilizing manipulator 200 carrying wafer, the arm 220 of manipulator 200 need to be not mobile at the axial direction of pedestal 210, only need to be at pedestal 210 mobile and centered by pedestal 210, be rotated and get final product in the radial direction, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, further improve the operating efficiency of chemical-mechanical polisher 10.
In examples more of the present invention, such as Fig. 2, Fig. 5 and shown in Figure 7, the first platform 320, the second platform 330 and a plurality of loading/unloading platform 160 can be identical with distance between the pedestal 210.In other words, the distance of the loading/unloading platform 160 of pedestal 210 and the first platform 320, the second platform 330 and each chemical-mechanical polishing mathing 100 can be a fixed value.Particularly, the first placed side 321 and the second placed side 331 can be circular, the working face of the loading/unloading platform 160 of each chemical-mechanical polishing mathing 100 can be circular, and wherein the center of circle of a plurality of described working faces of the center of circle of the center of circle of the first placed side 321, the second placed side 331 and a plurality of loading/unloading platform 160 can be distributed in point on the center line of pedestal 210 on the circumference in the center of circle.Like this, when utilizing manipulator 200 carrying wafer, the arm 220 of manipulator 200 need to be at pedestal 210 mobile in the radial direction, only need to move at the axial direction of pedestal 210 and get final product as the center of circle is rotated take pedestal 210, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, further improve the operating efficiency of chemical-mechanical polisher 10.
Advantageously, a plurality of working faces of the first placed side 321, the second placed side 331 and a plurality of loading/unloading platform 160 can be on the same level face, and the first platform 320, the second platform 330 and a plurality of loading/unloading platform 160 can be identical with distance between the pedestal 210.Like this, when utilizing manipulator 200 carrying wafer, 220 needs of the arm of manipulator 200 are rotated as the center of circle take pedestal 210, thereby can reduce further the transmission range of wafer and the transmission time of minimizing wafer, have further improved the operating efficiency of chemical-mechanical polisher 10.
In some embodiments of the invention, the center of circle of a plurality of described working faces of the center of circle of the first placed side 321 and a plurality of loading/unloading platform 160 can be distributed in point on the center line of pedestal 210 equally spacedly on the circumference in the center of circle.Manipulator 200 can be the multi-arm manipulator, and wherein a plurality of arms 220 of manipulator 200 are corresponding one by one with the first platform 320 and a plurality of loading/unloading platform 160.As shown in Figure 7, in one embodiment of the invention, loading/unloading platform 160 can be three (being that chemical-mechanical polishing mathing 100 can be three), manipulator 200 can be four arm manipulators, four arms 220 that described four arm manipulators can have pedestal 210 and be rotatably installed on the pedestal 210 and can across arrange, four arms 220 can be along the radial direction of pedestal 210 scalable and axially movable along pedestal 210, what wherein two loading/unloading platforms 160 can be along described circumference is radially relative, and what another loading/unloading platform 160 and the first platform 320 can be along described circumference is radially relative.That is to say that three loading/unloading platforms 160 and the first platform 320 can be arranged by across.Like this, described four arm manipulators can grasp four wafers (arm 220 crawl a wafer) simultaneously, and can by four arms 220 are rotated simultaneously 90 degree be implemented between three chemical-mechanical polishing mathings 100 and chemical-mechanical polishing mathing 100 and the first platform 320 between carry wafer.
In a concrete example of the present invention, the second platform 330 can be located between the first platform 320 and the loading/unloading platform 160 adjacent with the first platform 320.In other words, the angle theta of the line in the center of circle of the center of circle of the line in the center of circle of the center of circle of the first placed side 321 and described circumference and the second placed side 331 and described circumference is less than 90 degree.
Below with reference to the method for Fig. 1-7 description according to the chemically mechanical polishing of the embodiment of the invention.The cmp method of the embodiment of the invention for example can utilize chemical-mechanical polisher 10 to carry out, but is not limited to this, can may further comprise the steps according to the cmp method of the embodiment of the invention:
A) by manipulator 200 wafer on the transition apparatus 300 is transported in a plurality of chemical-mechanical polishing mathings 100 at least one in order to utilize 100 pairs of wafers of a plurality of chemical-mechanical polishing mathings to polish;
B) wafer after will polishing by manipulator 200 is transported on the transition apparatus 300; With
C) repeating step A) with B) until finish the polishing of all wafers.
The method of utilizing chemical-mechanical polisher 10 to carry out chemically mechanical polishing according to the embodiment of the invention has wafer transfer apart from the advantage of weak point, wafer transfer time weak point and high efficiency.
It will be appreciated by persons skilled in the art that and to place not wafer polishing or an a plurality of not wafer polishing on the transition apparatus 300.After the not wafer polishing on the transition device 300 is all removed, can be again provide not wafer polishing so that chemically mechanical polishing continues to carry out to transition apparatus 300.After the wafer after the polishing is moved to transition apparatus 300, can take to carry out the wafer after the polishing away subsequent operation from transition apparatus 300.
In some embodiments of the invention, described steps A) can comprise: can a plurality of wafers be transported to respectively on a plurality of chemical-mechanical polishing mathings 100 in order to utilize 100 pairs of described a plurality of wafers of a plurality of chemical-mechanical polishing mathings to polish from transition apparatus 300 by manipulator 200; Described step B) can comprise: can will be transported to respectively on the transition apparatus 300 by a plurality of wafers after a plurality of chemical-mechanical polishing mathing 100 polishings by manipulator 200.Can carry out chemically mechanical polishing to a plurality of wafers simultaneously like this, thereby further increase work efficiency.
Particularly, chemical-mechanical polishing mathing 100 can be three, and manipulator 200 can be the multi-arm manipulator, namely can utilize dobbies tool hand and 100 pairs of wafers of three chemical-mechanical polishing mathings to carry out chemically mechanical polishing.Wherein, described multi-arm manipulator can be transported to three wafers on three chemical-mechanical polishing mathings 100 in order to simultaneously three wafers are polished by three chemical-mechanical polishing mathings 100 from transition apparatus 300 simultaneously.Then, described multi-arm manipulator can be transported to three wafers after 100 polishings of three chemical-mechanical polishing mathings on the transition apparatus 300 simultaneously.
In one embodiment of the invention, chemical-mechanical polishing mathing 100 can be three (i.e. first, second, and third chemical-mechanical polishing mathings), and manipulator 200 can be the single armed manipulator, namely can utilize single armed manipulator and 100 pairs of wafers of three chemical-mechanical polishing mathings to carry out chemically mechanical polishing.Wherein, described single armed manipulator can be transported to three wafers on three chemical-mechanical polishing mathings 100 in order to polish by 100 pairs of three wafers of three chemical-mechanical polishing mathings from transition apparatus 300 successively.Then, described single armed manipulator can be transported to three wafers after the polishing on the transition apparatus 300 from three chemical-mechanical polishing mathings 100.
In examples more of the present invention, described steps A) can comprise:
A1) can a wafer be carried out the polishing first time from the first chemical-mechanical polishing mathing that transition apparatus 300 is transported to a plurality of chemical-mechanical polishing mathings 100 by manipulator 200;
A2) can by manipulator 200 will through the wafer after for the first time polishing from described the first chemical-mechanical polishing mathing be transported to the second chemical-mechanical polishing mathing carry out polishing second time also can repeating step A1); With
A3) can by manipulator 200 will through the wafer after for the second time polishing from described the second chemical-mechanical polishing mathing be transported to sequentially that all the other chemical-mechanical polishing mathings a plurality of chemical-mechanical polishing mathings 100 polish with order and can repeating step A2).
Described step B) can comprise: B1) can will be transported on the transition apparatus 300 through the wafer after the last polishing by manipulator 200.
Particularly, as shown in Figures 2 and 3, chemical-mechanical polishing mathing 100 can be three, and manipulator 200 can be the single armed manipulator, transition apparatus 300 can comprise be used to the first platform 320 of placing wafer polishing not and be used for placing polishing after the second platform 330 of wafer.Wherein, described steps A) can comprise:
A1) can a wafer be carried out rough polishing from the first chemical-mechanical polishing mathing that the first platform 320 is transported to these three chemical-mechanical polishing mathings 100 by manipulator 200.
A2) can by manipulator 200 will through the wafer after the rough polishing from described the first chemical-mechanical polishing mathing be transported to the second chemical-mechanical polishing mathing carry out fine polishing and can repeating step A1).Particularly, at first can will be transported to the second chemical-mechanical polishing mathing from described the first chemical-mechanical polishing mathing through the wafer after the rough polishing by manipulator 200 and carry out fine polishing, and then can a wafer be transported to described the first chemical-mechanical polishing mathing from the first platform 320 by manipulator 200 and carry out rough polishing.With
A3) can by manipulator 200 will through the wafer after the fine polishing from described the second chemical-mechanical polishing mathing be transported to the 3rd chemical-mechanical polishing mathing with carry out finishing polish and can repeating step A2).
Particularly, at first can will be transported to the 3rd chemical-mechanical polishing mathing to carry out finishing polish from described the second chemical-mechanical polishing mathing through the wafer after the fine polishing by manipulator 200, then can will be transported to described the second chemical-mechanical polishing mathing from described the first chemical-mechanical polishing mathing through the wafer after the rough polishing by manipulator 200 and carry out fine polishing, and can a wafer be transported to described the first chemical-mechanical polishing mathing from the first platform 320 by manipulator 200 at last and carry out rough polishing.
Described step B) can comprise: B1) can will be transported to through the wafer after the finishing polish on the second platform 330 by manipulator 200.
Repeat above-mentioned steps at last until finish the polishing of all wafers.Particularly, after manipulator 200 will be transported to through the wafer after the finishing polish on the second platform 330, at first can will be transported to described the 3rd chemical-mechanical polishing mathing to carry out finishing polish from described the second chemical-mechanical polishing mathing through the wafer after the fine polishing by manipulator 200, then can will be transported to described the second chemical-mechanical polishing mathing from described the first chemical-mechanical polishing mathing through the wafer after the rough polishing by manipulator 200 and carry out fine polishing, and can a wafer be transported to described the first chemical-mechanical polishing mathing from the first platform 320 by manipulator 200 at last and carry out rough polishing.In other words, the first platform 320, described the first chemical-mechanical polishing mathing, described the second chemical-mechanical polishing mathing, described the 3rd chemical-mechanical polishing mathing and the second platform 330 can form a chemically mechanical polishing streamline, a plurality of not wafer polishings successively through the first platform 320, described the first chemical-mechanical polishing mathing, described the second chemical-mechanical polishing mathing, described the 3rd chemical-mechanical polishing mathing and the second platform 330 (namely passing through described chemically mechanical polishing streamline) to carry out chemically mechanical polishing.
In one embodiment of the invention, chemical-mechanical polishing mathing 100 can be three, and manipulator 200 can be four arm manipulators, and transition apparatus 300 can comprise the first platform 320 and the second platform 330.Wherein, described steps A) can comprise:
A1) can a wafer be carried out rough polishing from the first chemical-mechanical polishing mathing that the first platform 320 is transported to three chemical-mechanical polishing mathings 100 by the first arm of described four arm manipulators;
A2) the second arm that can be by described four arm manipulators will through the wafer after the rough polishing from described the first chemical-mechanical polishing mathing be transported to the second chemical-mechanical polishing mathing carry out fine polishing and can repeating step A1); With
A3) the 3rd arm that can be by described four arm manipulators will through the wafer after the fine polishing from described the second chemical-mechanical polishing mathing be transported to the 3rd chemical-mechanical polishing mathing with carry out finishing polish and can repeating step A2);
Described step B) can comprise: B1) can will be transported to through the wafer after the finishing polish on the second platform 330 by the 4th arm of described four arm manipulators.
Particularly, as shown in Figure 7, four arms 220 that described four arm manipulators can have pedestal 210 and can be rotatably installed on the pedestal 210 and can across arrange, the center of circle of the first placed side 321 of the first platform 320 wherein, the center of circle of the working face of the center of circle of the second placed side 331 of the second platform 330 and three loading/unloading platforms 160 of three chemical-mechanical polishing mathings 100 can be distributed in point on the center line of pedestal 210 on the circumference in the center of circle, the loading/unloading platform 160 of two chemical-mechanical polishing mathings 100 can be along described circumference radially relative, another loading/unloading platform 160 and the first platform 320 can be along described circumference radially relative, the second platform 330 can be located between the first platform 320 and the loading/unloading platform 160 adjacent with the first platform 320.In other words, the angle theta of the line in the center of circle of the center of circle of the second placed side 331 of the line in the center of circle of the center of circle of the first placed side 321 of the first platform 320 and described circumference and the second platform 330 and described circumference is less than 90 degree.Wherein said steps A) can comprise:
A1) can grasp a not wafer polishing from the first platform 320 by the first arm 221 of described four arm manipulators, then described four arm manipulators can rotate 90 degree so that the first arm 221 not wafer polishing be transported on the first chemical-mechanical polishing mathing (for example right side polishing machine 100 among Fig. 7) in three chemical-mechanical polishing mathings 100 and carry out rough polishing, described four arm manipulators can counter-rotate 90 and spend to reset subsequently.Be understandable that described four arm manipulators also can continue to rotate 90 degree subsequently, compare with reverse rotation 90 degree that four arms of described four arm manipulators replace successively.
A2) the second arm 222 that can be by described four arm manipulators from described the first chemical-mechanical polishing mathing crawl through the wafer after the rough polishing and can repeating step A1).Particularly, the second arm 222 that can be by described four arm manipulators from described the first chemical-mechanical polishing mathing crawl through the wafer after the rough polishing and can be by the first arm 221 from one of the first platform 320 crawl wafer polishing not, then described four arm manipulators can rotate 90 degree so that the second arm 222 will through the wafer after the rough polishing from described the first chemical-mechanical polishing mathing be transported to the second chemical-mechanical polishing mathing carry out fine polishing and make the first arm 221 generals not wafer polishing be transported to described the first chemical-mechanical polishing mathing and carry out rough polishing, subsequently described four arm manipulators oppositely pin rotate 90 degree.
A3) the 3rd arm 223 that can be by described four arm manipulators from described the second chemical-mechanical polishing mathing crawl through the wafer after the fine polishing and repeat steps A 2).Particularly, can grasp through the wafer after the fine polishing from described the second chemical-mechanical polishing mathing by the 3rd arm 223 of described four arm manipulators, grasp through the wafer after the rough polishing from described the first chemical-mechanical polishing mathing by the second arm 222, and pass through the first arm 221 and grasp a not wafer polishing from the first platform 320, then described four arm manipulators can rotate 90 the degree carry out finishing polish so that the 3rd arm 223 will be transported to the 3rd chemical-mechanical polishing mathing from described the second chemical-mechanical polishing mathing through the wafer after the fine polishing, make the second arm 222 be transported to described the second chemical-mechanical polishing mathing from described the first chemical-mechanical polishing mathing through the wafer after the rough polishing and carry out fine polishing, and make the first arm 221 not wafer polishing be transported to and carry out rough polishing on described the first chemical-mechanical polishing mathing, described four arm manipulators can counter-rotate 90 and spend to reset subsequently.
A4) can grasp through the wafer after the finishing polish from described the 3rd chemical-mechanical polishing mathing by the 4th arm 224 of described four arm manipulators, grasp through the wafer after the fine polishing from described the second chemical-mechanical polishing mathing by the 3rd arm 223, grasp through the wafer after the rough polishing from described the first chemical-mechanical polishing mathing by the second arm 222, and by the first arm 221 from one of the first platform 320 crawl wafer polishing not, then described four arm manipulators can rotate 90 degree and carry out finishing polish so that the 3rd arm 223 will be transported to the 3rd chemical-mechanical polishing mathing from described the second chemical-mechanical polishing mathing through the wafer after the fine polishing, make the second arm 222 be transported to described the second chemical-mechanical polishing mathing from described the first chemical-mechanical polishing mathing through the wafer after the rough polishing and carry out fine polishing, and make the first arm 221 not wafer polishing be transported to and carry out rough polishing on described the first chemical-mechanical polishing mathing;
Described step B) can comprise: B1) described four arm manipulators can counter-rotate angle θ so that the 4th arm 224 will be transported to through the wafer after the 3rd chemical-mechanical polishing mathing finishing polish on the second platform 330, and described four arm manipulators can counter-rotate angle 90-θ to reset subsequently.Be understandable that described four arm manipulators also can be rotated in the forward angle θ to reset subsequently, compare with reverse rotation angle 90-θ, four arms of described four arm manipulators replace successively.
According to the chemical-mechanical polisher 10 of the embodiment of the invention carry out chemically mechanical polishing have wafer transfer apart from weak point, the wafer transfer time is short and the advantage of high efficiency.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment in the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (9)
1. a chemical-mechanical polisher is characterized in that, comprising:
A plurality of chemical-mechanical polishing mathings, described a plurality of chemical-mechanical polishing mathings are respectively applied to wafer polishing;
Manipulator, described manipulator are used for the carrying wafer; With
Transition apparatus, described transition apparatus is used for placing wafer, and described transition apparatus is transition platform,
Wherein said a plurality of chemical-mechanical polishing mathing and described transition apparatus are arranged so that described manipulator is transported to the not wafer polishing on the described transition apparatus on the described chemical-mechanical polishing mathing and the wafer after will polishing is transported on the described transition apparatus and between described a plurality of chemical-mechanical polishing mathings from described chemical-mechanical polishing mathing and carries wafer around described manipulator.
2. chemical-mechanical polisher according to claim 1 is characterized in that, described manipulator is a kind of in single armed manipulator, dual-arm robot and the four arm manipulators, and wherein said manipulator comprises pedestal and is installed in arm on the described pedestal.
3. chemical-mechanical polisher according to claim 2 is characterized in that, each described chemical-mechanical polishing mathing comprises:
Workbench;
Polishing disk, described polishing disk are installed on the upper surface of described workbench;
Trimmer and polishing fluid conveyer, described trimmer and described polishing fluid conveyer are installed in respectively on the upper surface of described workbench and contiguous described polishing disk;
The rubbing head support, described rubbing head support is installed on the upper surface of described workbench;
Loading/unloading platform, described loading/unloading platform are installed on the upper surface of described workbench and are positioned at a side of the described pedestal of vicinity of described workbench; With
Rubbing head, described rubbing head is rotatable and be installed in movably on the described rubbing head support between described polishing disk and the described loading/unloading platform.
4. chemical-mechanical polisher according to claim 3 is characterized in that, the working face of a plurality of loading/unloading platforms of described a plurality of chemical-mechanical polishing mathings is on the same level face.
5. according to claim 3 or 4 described chemical-mechanical polishers, it is characterized in that a plurality of loading/unloading platforms of described a plurality of chemical-mechanical polishing mathings are identical with distance between the described pedestal.
6. chemical-mechanical polisher according to claim 5, it is characterized in that, the working face of the loading/unloading platform of each described chemical-mechanical polishing mathing is circular, and the center of circle of a plurality of described working faces of wherein said a plurality of loading/unloading platforms is distributed in point on the center line of described pedestal on the circumference in the center of circle.
7. chemical-mechanical polisher according to claim 3, it is characterized in that, described transition platform comprises the first platform and the second platform, described the first platform has be used to first placed side of placing wafer polishing not and described the second platform and has for second placed side of placing the wafer after the polishing, a plurality of working faces of wherein said the first placed side, described the second placed side and described a plurality of loading/unloading platforms are on the same level face, and described the first platform, described the second platform and described a plurality of loading/unloading platform are identical with distance between the described pedestal.
8. chemical-mechanical polisher according to claim 7, it is characterized in that, described the first placed side and described the second placed side are circle, the working face of the loading/unloading platform of each described chemical-mechanical polishing mathing is circular, and the center of circle of the center of circle of the center of circle of wherein said the first placed side, described the second placed side and a plurality of described working faces of described a plurality of loading/unloading platforms is distributed in point on the center line of described pedestal on the circumference in the center of circle.
9. chemical-mechanical polisher according to claim 8, it is characterized in that, described loading/unloading platform is three, described manipulator is four arm manipulators, described four arm manipulators have pedestal and four arms that are rotatably installed on the described pedestal and across is arranged, described four arms are scalable and axially movable along pedestal along the radial direction of described pedestal, radially relative along described circumference of two described loading/unloading platforms wherein, another described loading/unloading platform and described the first platform are radially relative along described circumference.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103231303B (en) * | 2013-05-15 | 2016-02-24 | 清华大学 | Chemical-mechanical polisher |
| CN103659535B (en) * | 2013-12-06 | 2017-01-11 | 台州联帮机器人科技有限公司 | Workpiece surface machining system |
| CN105225939B (en) * | 2014-05-30 | 2019-08-16 | 盛美半导体设备（上海）有限公司 | Improve the method for the polishing wafer uniformity |
| CN105598827B (en) * | 2016-01-05 | 2018-05-22 | 天津华海清科机电科技有限公司 | Chemical-mechanical polishing mathing |
| CN109590896A (en) * | 2019-01-11 | 2019-04-09 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Chemical-mechanical polisher support construction and chemical-mechanical polisher |
| CN111524833B (en) * | 2020-04-28 | 2023-04-21 | 华海清科股份有限公司 | Chemical mechanical polishing system and chemical mechanical polishing method |
| CN114454085B (en) * | 2021-12-28 | 2022-09-30 | 华海清科股份有限公司 | Chemical mechanical polishing method and polishing system |
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| JP5406676B2 (en) * | 2009-11-10 | 2014-02-05 | 株式会社ディスコ | Wafer processing equipment |
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| CN101107097A (en) * | 2005-01-21 | 2008-01-16 | 株式会社荏原制作所 | Substrate polishing method and apparatus |
| CN1820897A (en) * | 2005-02-18 | 2006-08-23 | 株式会社迪思科 | Crystal plate carrying apparatus |
| CN101402178A (en) * | 2007-10-04 | 2009-04-08 | 株式会社迪思科 | Milling processing device for wafer |
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