CN101961853B - Substrate polishing apparatus and method of polishing substrate using the same - Google Patents
Substrate polishing apparatus and method of polishing substrate using the same Download PDFInfo
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- CN101961853B CN101961853B CN201010238451.0A CN201010238451A CN101961853B CN 101961853 B CN101961853 B CN 101961853B CN 201010238451 A CN201010238451 A CN 201010238451A CN 101961853 B CN101961853 B CN 101961853B
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- pad
- substrate
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- supporting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
Abstract
Provided is a substrate polishing apparatus that includes a polishing unit and a pad supporting member. The polishing unit includes a polishing pad polishing a substrate seated on a substrate supporting member, and a pad driving member moving the polishing pad. The pad supporting member is disposed at a side of the substrate supporting member to support a portion of a polishing surface the polishing pad without contacting the substrate when an edge of the substrate seated on the substrate supporting member is polished. Accordingly, the substrate polishing apparatus prevents the polishing pad from being inclined to the outer side of a substrate while an edge of the substrate is polished, thereby improving polishing efficiency and preventing the breakage of a substrate during a polishing process.
Description
Technical field
The disclosure relates to for the manufacture of semi-conductive equipment and method at this, and more specifically, relates to for grind and clean substrate processing apparatus and the method for semiconductor substrate in single-wafer processing mode.
Background technology
In common semiconductor device manufacture is processed, repeatedly carry out a plurality of cell processing such as deposition processes, photoetching treatment and etch processes to form and stacked film.Repeat these processing until form desired predetermined circuit patterns on wafer.After forming circuit pattern, on the surface of wafer, be formed with many irregularities.Because present semiconductor device height is integrated and be sandwich construction, the number of the irregularity in wafer surface and the difference in height between irregularity increase to some extent.As a result, the unevenness due to wafer surface there will be and defocuses in photoetching treatment.So, for realizing the planarization of wafer surface, should periodically to wafer surface, grind.
In order to make wafer surface planarization, people have developed various flattening surface technology.In these technology, because by using cmp (CMP) technology, can make wide surface and narrow flattening surface to thering is good glacing flatness, therefore CMP technology has obtained using widely.By using mechanical friction and chemical abrasion, CMP equipment is for grinding the wafer surface that scribbles tungsten or oxide, and use CMP equipment can be realized very meticulous grinding.
When milling apparatus grinding wafers, milling apparatus on the end face of grinding pad, subsequently, is pressed wafer and rotate to grinding pad by wafer arrangement.Such milling apparatus comprises around wafer to avoid the snap ring of Waffer edge over-lapping.Yet due in whole wafer grinding is processed, expensive snap ring is ground together with wafer, therefore the replacement cycle of snap ring is short, and it disassembles processing complexity.
Summary of the invention
Embodiments of the invention provide a kind of substrate milling apparatus that improves grinding efficiency.
Embodiments of the invention also provide a kind of method of using aforesaid substrate milling apparatus grinding base plate.
Embodiments of the invention provide a kind of substrate milling apparatus, and it comprises: substrate supporting member, grinding unit and at least one pad support component.
Substrate is positioned in substrate supporting member.Grinding unit comprises grinding pad and pad driver part, and grinding pad is arranged in substrate supporting member top, and to grind the substrate being positioned in substrate supporting member, pad driver part is for mobile grinding pad, to change grinding pad with respect to the position of substrate supporting member.Pad support component is arranged in a side of substrate supporting member, when grinding is positioned at the edge of the substrate in substrate supporting member, and the part of the not contact substrate of pad support member supports grinding pad lapped face.
In other embodiments of the invention, substrate milling apparatus comprises: bowl unit, rotatable substrate supporting member, grinding unit and at least one pad support component.
Bowl unit has open top.Bowl is rotatably furnished with substrate supporting member in unit, above described substrate supporting member, is equipped with substrate.Grinding unit comprises grinding pad and pad driver part, grinding pad is arranged in substrate supporting member top, to grind and to be positioned at the substrate in substrate supporting member in milled processed, pad driver part is for moving to the fringe region of substrate or the fringe region of substrate position in addition by grinding pad from being positioned at the middle section of the substrate substrate supporting member.Pad support component is arranged in bowl unit, and comprises the supporting pad that separates with substrate supporting member and be arranged in a side of substrate supporting member.
In other embodiments of the invention, substrate Ginding process is as follows.
Substrate is placed in substrate supporting member.Grinding pad is arranged in to substrate supporting member top.In at least one in rotary plate support component and grinding pad, with grinding pad, press and grinding base plate.When grinding base plate, in the part of the not contact substrate by pad support member supports grinding pad, the edge of grinding base plate.
Accompanying drawing explanation
Comprise that accompanying drawing is so that further understanding of the invention to be provided, and accompanying drawing is incorporated in this description and forms the part of this description.Attachedly illustrate exemplary embodiment of the present invention, and be used from and explain principle of the present invention with this description one.In the accompanying drawings:
Fig. 1 is the schematic diagram of single-chip type grinding system according to an embodiment of the invention;
Fig. 2 means the stereogram of the wafer grinding unit of Fig. 1;
Fig. 3 means that the substrate supporting unit of Fig. 2 and the office of bowl unit cut open stereogram;
Fig. 4 means the stereogram of the grinding unit of Fig. 2;
Fig. 5 means that the office of the grinding unit of Fig. 4 cuts open side view;
Fig. 6 means the press section of Fig. 5 and the vertical cross-sectional view of vertical arm;
Fig. 7 means the stereogram of the pad support component shown in Fig. 3;
Fig. 8 means the schematic diagram of the relative position between pad support component, substrate supporting unit and the grinding unit shown in Fig. 7;
The flow chart of processing when Fig. 9 means the wafer grinding portion grinding wafers shown in Fig. 2;
Figure 10 means the schematic diagram of the processing of the pad support member supports grinding pad shown in Fig. 8 when grinding wafers edge;
Figure 11 means the schematic diagram of another example of the pad support component shown in Fig. 8;
Figure 12 means the schematic diagram of the processing of the pad support member supports grinding pad shown in Figure 11 when grinding wafers edge;
Figure 13 means the schematic diagram of another example of the pad support component shown in Fig. 8; And
Figure 14 A and Figure 14 B mean that the height of the end face of the pad support component shown in Figure 13 when grinding wafers is according to the schematic diagram of the change in location of grinding pad.
The specific embodiment
The preferred embodiments of the present invention are described with reference to the accompanying drawings in more detail.Yet the present invention can be with multi-form enforcement, and should not be construed as and be confined to the embodiment that set forth in this place.On the contrary, provide these embodiment to make the disclosure more completely with thorough, and to those skilled in the art, shown scope of the present invention more fully.For example, although be used as semiconductor substrate with wafer, yet technical scope of the present invention and spirit are not limited to this.
Fig. 1 is the schematic diagram of single-chip type grinding system according to an embodiment of the invention.
With reference to Fig. 1, base plate processing system 2000 according to the present invention can comprise load/unload unit 10, transposition automatic machine (index robot) 20, buffer cell 30, main transmission automatic machine 50, a plurality of substrate grinding unit 1000 and control module 60.
Load/unload unit 10 comprises a plurality of load port 11a, 11b, 11c and 11d.Although load/unload unit 10 comprises four load port 11a, 11b, 11c and 11d in the present embodiment, yet the number of load port 11a, 11b, 11c and 11d can increase and reduce according to the treatment effeciency of base plate processing system 2000 and encapsulation condition.
Container (front open unified pods, FOUP) 12a, 12b, 12c and 12d are unified in open front, and to lay respectively at load port 11a, 11b, 11c and 11d upper, and open front unifies to accommodate in container wafer.In each FOUP 12a, 12b, 12c and 12d, be furnished with about ground surface in horizontal direction for receiving a plurality of slits of wafer.FOUP 12a, 12b, 12c and 12d receive the wafer of having processed in each substrate grinding unit 1000 maybe will be loaded into the wafer in each substrate grinding unit 1000.Below, for convenience of description, the wafer of having processed in each substrate grinding unit 1000 is called processed wafer, and still untreated wafer is called raw wafers.
Between load/unload unit 10 and buffer cell 30, be furnished with the first transfer path 41.In the first transfer path 41, be furnished with the first transmission track 42.On the first transmission track 42, be furnished with transposition automatic machine 20.Transposition automatic machine 20 moves to transmit wafer between load/unload unit 10 and buffer cell 30 along the first transmission track 42.That is, transposition automatic machine 20 takes out at least one raw wafers from FOUP 12a, the 12b, 12c and the 12d that are positioned at load/unload unit 10, so that this wafer is loaded on buffer cell 30.Equally, transposition automatic machine 20 takes out at least one processed wafer from buffer cell 30, wafer is loaded on FOUP 12a, 12b, 12c and the 12d being positioned on load/unload unit 10.
Buffer cell 30 is arranged in a side of the first transfer path 41.Buffer cell 30 receives the raw wafers being transmitted by transposition automatic machine 20 and the wafer of processing in substrate grinding unit 1000.
Main transmission automatic machine 50 is arranged in the second transfer path 43.In the second transfer path 43, be furnished with the second transmission track 44.Main transmission automatic machine 50 is arranged on the second transmission track 44.Main transmission automatic machine 50 moves along the second transmission track 44, to transmit wafer between buffer cell 30 and substrate grinding unit 1000.That is, main transmission automatic machine 50 takes out at least one raw wafers from buffer cell 30, so that this wafer is offered to substrate grinding unit 1000.Equally, main transmission automatic machine 50 by the wafer of processing from substrate grinding unit 1000, be that processed wafer is loaded into buffer cell 30.
Substrate grinding unit 1000 is arranged in the second transfer path 43 both sides.Each substrate grinding unit 1000 grinds and cleans raw wafers, to manufacture handled wafer.In substrate grinding unit 1000, at least two substrate grinding units across the second transfer path 43 towards each other.In example of the present invention, when from plane, although two pairs of substrate grinding units 1000 are arranged in the second transfer path 43 both sides and arrange abreast along the second transfer path 43 respectively, yet the number that is arranged in the substrate grinding unit 1000 of the second transfer path 43 both sides can increase and reduce according to the treatment effeciency of base plate processing system 2000 and encapsulation condition.
Each substrate grinding unit 1000 is connected in control module 60, to grind and to clean raw wafers according to the control of control module 60.That is, control module 60 is controlled substrate grinding unit 1000, to control the grinding of each substrate grinding unit 1000.
Below, with reference to accompanying drawing, describe the configuration of substrate grinding unit 1000 in detail.
Fig. 2 means the stereogram of the substrate grinding unit of Fig. 1, and Fig. 3 means that the substrate supporting unit of Fig. 2 and the office of bowl unit cut open stereogram.
With reference to Fig. 1～Fig. 3, in base plate processing system 2000, in a substrate grinding unit 1000, can sequentially carry out grinding wafers 70 end face milled processed and after the milled processed the surperficial cleaning treatment of clean wafers 70.
Particularly, substrate grinding unit 1000 can comprise substrate supporting unit 100, bowl unit 200, grinding unit 300, pad support component 401, the first processing fluid feeding unit 510 and the second processing fluid feeding unit 520, brush unit 610, sprayer unit 620 and pad regulon 700.
The wafer 70 sending from main transmission automatic machine 50 is placed in substrate supporting unit 100.During the milled processed and cleaning treatment of wafer 70, by substrate supporting unit 100, supported and fixed wafer 70.Substrate supporting unit 100 can comprise the spin head 110 that is equipped with wafer 70 above, the support portion 120 of supporting spin head 110 and the spin drive division that torque is provided.
When from plane, spin head 110 is roughly rounded, and its width reduces to bottom surface gradually from its end face.In example of the present invention, the area of the end face of the spin head 110 of supporting wafers 70 is less than the area of wafer 70.So when from the side, the end that is positioned at the wafer 70 in spin head 110 is outwards outstanding from spin head 110 tops.
Support portion 120 is arranged in spin head 110 belows, and is connected in spin drive division.It is cylindric that support portion 120 is approx, and be coupled to spin head 110.Spin drive division makes support portion 120 rotation, and the torque of support portion 120 is passed to spin head 110, so that spin head 110 rotations.During grinding and cleaning treatment, by the torque providing from spin drive division, made wafer 70 be fixed on spin head 110 rotations end face.
Substrate supporting unit 100 is contained in bowl unit 200.Bowl unit 200 can comprise the first processing bowl 210 and the second processing bowl the 220, first recycling bin 230 and the second recycling bin 240, the first recovery tube 251 and the second recovery tube 252 and lifting/lowering parts 260.
Particularly, first processes bowl 210 and second processes bowl 220 around substrate supporting unit 100, to provide, wafer 70 is ground to the space with cleaning treatment.Each first processing bowl 210 and second is processed bowl 220 and is had open top, by the top of this opening, exposes spin head 110.Although in the present embodiment, the first each that process bowl the 210 and second processing bowl 220 is circular, yet the invention is not restricted to this.
Particularly, first process bowl 210 and can comprise sidewall 211, take over a business 212 and guidance part 213.Sidewall 211 can be similar to and be circular with around substrate supporting unit 100.
The upper end of sidewall 211 is connected in 212.Take over a business 212 from sidewall 211 extensions and there is the acclivitous surface of leaving sidewall 211.Take over a business 212 and approximate be circular.When from plane, take over a business 212 and separate with around spin head 110 with spin head 110.
Guidance part 213 comprises the first guiding walls 213a and the second guiding walls 213b.The first guiding walls 213a is outstanding with towards taking over a business 212 from the inwall of sidewall 211.Equally, the first guiding walls 213a has the downward-sloping surface of leaving sidewall 211.The first guiding walls 213a is circular.The second guiding walls 213b from the first guiding walls 213a vertically to downward-extension with towards sidewall 211.The second guiding walls 213b is circular.During the milled processed of wafer 70, guidance part 213 by the conductance that is distributed to the sidewall 211 of the first processing bowl 210 and takes over a business the treat liquid on 212 inner surface to the first recycling bin 230.
Second processes bowl 220 is arranged in the first processing bowl 210 outsides.Second processes bowl 220 around the first processing bowl 210, and is greater than the first processing bowl 210.
Particularly, the second processing bowl 220 can comprise sidewall 221 and take over a business 222.Sidewall 221 can be approximate circle ring-type with the sidewall 211 around the first processing bowl 210.The sidewall 211 that sidewall 221 and first is processed bowl 210 separates and is connected in the first processing bowl 210.
The upper end of sidewall 221 is connected in 222.Take over a business 222 from sidewall 221 extensions and there is the acclivitous surface of leaving sidewall 221.Take over a business 222 and approximate be circular.When from plane, take over a business 222 and separate with around spin head 110 with spin head 110.Take over a business 222 211 tops of taking over a business that are arranged in the first processing bowl 210.Equally, take over a business 222 and take over a business 211 and 211 separate with taking over a business of the first processing bowl 210 towards the first processing bowl 210.
First processes bowl 210 and second processes bowl 220 arranged beneath and has the first recycling bin 230 and the second recycling bin 240, to reclaim for grinding the treat liquid with cleaning treatment.Each first recycling bin 230 and the second recycling bin 240 are approximately has the circular of open top.Although in the present embodiment, each of the first recycling bin 230 and the second recycling bin 240 has circular, yet the invention is not restricted to this.
The first recycling bin 230 is arranged in the first processing bowl 210 belows, to reclaim the treat liquid for milled processed.The second recycling bin 240 is arranged in the second processing bowl 220 belows, to reclaim the treat liquid for cleaning treatment.
Particularly, the first recycling bin 230 can comprise chassis 231, the first side wall 232, the second sidewall 233 and connecting portion 234.Chassis 231 has approximate circle ring-type with around support portion 120.In example of the present invention, chassis 231 has the vertical cross section of ' V ' shape, to easily make the treat liquid reclaiming be discharged in the first recycling bin 230.So, in chassis 231, be furnished with the recovery flow path 231a of ring-type, easily to discharge and to recycle liquid.
The first side wall 232 is 231 extensions vertically from chassis, to be provided for recycling first of liquid, reclaim space RS 1.The second sidewall 233 and the first side wall 232 separate with towards the first side wall 232.Connecting portion 234 is connected in the upper end of the first side wall 232 and the upper end of the second sidewall 233.Connecting portion 234 has from the first side wall 232 towards the second acclivitous surfaces of sidewall 233.Connecting portion 234 drips to the treat liquid in the first recovery space RS1 outside to the first recovery space RS1 guiding, so that treat liquid is introduced to first, reclaim in the RS1 of space.
The second recycling bin 240 is arranged in the first recycling bin 230 outsides.The second recycling bin 240 separates around the first recycling bin 230 and with the first recycling bin 230.Particularly, the second recycling bin 240 can comprise chassis 241, the first side wall 242 and the second sidewall 243.Chassis 241 is that approximate circle ring-type is with the chassis 231 around the first recycling bin 230.In example of the present invention, chassis 241 has the vertical cross section of ' V ' shape, so that the treat liquid reclaiming is easily discharged in the second recycling bin 240.So, in chassis 241, be furnished with the recovery flow path 241a of ring-type, easily to discharge and to recycle liquid.
The first side wall 242 and the second sidewall 243 be 241 extensions vertically from chassis, to be provided for recycling second of liquid, reclaim space RS2.Each is circular for the first side wall 242 and the second sidewall 243.The first side wall 242 is arranged between the first side wall 232 and the second sidewall 233 of the first recycling bin 230, with the first side wall 232 around the first recycling bin 230.The second sidewall 243 of the second recycling bin 240 across chassis 241 towards the first side wall 242 with around the first side wall 242.The second sidewall 243 of the second recycling bin 240 is around the second sidewall 233 of the first recycling bin 230, and its upper end is arranged in sidewall 221 outsides of the second processing bowl 220.
When wafer 70 being ground with cleaning treatment, the vertical position that spin head 110 and first is processed between bowl the 210 and second processing bowl 220 changes according to each processing.So the first recycling bin 230 and the second recycling bin 240 reclaim respectively the treat liquid of the processing for differing from one another.
Particularly, when carrying out milled processed, spin head 110 is arranged in the first processing bowl 210, with the wafer 70 in the first processing bowl 210, carries out milled processed.During milled processed, the rotation by spin head 110 makes wafer 70 rotations.So, during milled processed, due to the torque of wafer 70, be sprayed onto treat liquid on wafer 70 to the inner surface of the sidewall 211 of the first processing bowl 210 and take over a business 212 inner surface and disperse.The treat liquid that adheres to the sidewall 211 of the first processing bowl 210 and take over a business 212 inner surface is along the sidewall 211 of the first processing bowl 210 and take over a business 212 and flow to arrive guidance part 213 along gravity direction, subsequently, the inner surface of treat liquid along gravity direction along guidance part 213 flows and is recovered in the first recycling bin 230.
When carrying out carrying out cleaning treatment after milled processed, spin head 110 be arranged in the second processing bowl 220 take over a business 222 belows and above the first processing bowl 210.During cleaning treatment, spin head 110 rotations.So, in cleaning treatment, be sprayed onto treat liquid on wafer to the second processing bowl 220 take over a business 222 and the inner surface and first of sidewall 221 outer surface of processing bowl 210 disperse.The first sidewall 211 of processing bowl 210 is arranged in 241 tops, chassis of the second recycling bin 240.The treat liquid that adheres to the outer surface of the first processing bowl 210 flows and is recovered in the second recycling bin 240 along gravity direction along the outer surface of the first processing bowl 210.Equally, the treat liquid that adheres to the inner surface of the second processing bowl 220 flows with gravity direction and is recovered in the second recycling bin 240 along the inner surface of the second processing bowl 220.
As mentioned above, the treat liquid that the first recycling bin 230 reclaims for milled processed, and the second recycling bin 240 reclaims the treat liquid that is used for cleaning treatment.Therefore, because bowl unit 200 can reclaim respectively the treat liquid of each processing for carrying out in bowl unit 200, therefore treat liquid can easily reuse and reclaim.
The first recycling bin 230 is connected in the first recovery tube 251, and the second recycling bin 240 is connected in the second recovery tube 252.The first recovery tube 251 is coupled to the chassis 231 of the first recycling bin 230.In the chassis 231 of the first recycling bin 230, be limited with the first recovery holes 231b being communicated with the first recovery tube 251.Be recovered to the treat liquid that first of the first recycling bin 230 reclaims in the RS1 of space and by the first recovery tube 251, be discharged into outside via the first recovery holes 231b.
Although a bowl unit 200 comprises that two are processed 210 and 220 and two recycling bins 230 of bowl and 240 in the present embodiment, however process bowl 210 and 220 and the number of recycling bin 230 and 240 can be according to increasing for grinding with the number of the number of the treat liquid of cleaning treatment and the treat liquid that will reclaim respectively.
The second recovery tube 252 is coupled to the chassis 241 of the second recycling bin 240.In the chassis 241 of the second recycling bin 240, be limited with the second recovery holes 241b being communicated with the second recovery tube 252.Be recovered to the treat liquid that second of the second recycling bin 240 reclaims in the RS2 of space and by the second recovery tube 252, be discharged into outside via the second recovery holes 241b.
Although the first recovery tube 251 and the second recovery tube 252 have been established respectively one (singularity), yet the number of the first recovery tube 251 and the second recovery tube 252 can increase according to size and the organic efficiency of the first recycling bin 230 and the second recycling bin 240.
Second processes bowl 220 outsides is furnished with the lifting/lowering parts 260 of activity vertically.Lifting/lowering parts 260 are coupled to the sidewall 221 of the second processing bowl 220, to regulate the first processing bowl 210 and second to process the vertical position of bowl 220.Particularly, lifting/lowering parts 260 can comprise bracket 261, shifting axle 262 and driver 263.Bracket 261 is fixed on the lateral wall 221 of the second processing bowl 220 and is coupled to shifting axle 262.Shifting axle 262 is connected in driver 263 and moves vertically by driver 263.
When wafer 70 is positioned in spin head 110 or rise from spin head 110, by lifting/lowering parts 260, makes the first processing bowl 210 and second process bowl 220 and decline, so that spin head 110 can be processed bowl 220 from the first processing bowl 210 and second, project upwards.When the first processing bowl 210 and second is processed bowl 220 decline, the first side wall 232 of the first recycling bin 230 and the second sidewall 233 and connecting portion 234 embed in the space of the sidewall 211 of the first processing bowl 210 and the first guiding walls 213a and the second guiding walls 213b restriction.
Equally, when wafer 70 being ground with cleaning treatment, by lifting/lowering parts 260, making the first processing bowl 210 and second process bowl 220 rises and declines, to regulate the first processing bowl 210 and second to process the relative vertical position between bowl 220 and spin head 110, thereby reclaim respectively, be used for the treat liquid of milled processed and for the treat liquid of cleaning treatment.
In the present embodiment, although making the first processing bowl 210 and second process bowl 220 moves vertically, to change first in substrate grinding unit 1000, process bowl 210 and second and process the relative vertical position between bowl 220 and spin head 110, yet the invention is not restricted to this.For example, mobile spin head 110 vertically, processes the relative vertical position between bowl 220 and spin head 110 to change the first processing bowl 210 and second.
Bowl 200 outsides, unit are furnished with grinding unit 300, first and process fluid feeding unit 510 and the second processing fluid feeding unit 520, brush unit 610, sprayer unit 620 and pad regulon 700.
Grinding unit 300 chemically and mechanically grinds the surface of the wafer 70 that is fixed on substrate supporting unit 100, so that the flattening surface of wafer 70.
Fig. 4 means the stereogram of the grinding unit of Fig. 2, and Fig. 5 means that the office of the grinding unit of Fig. 4 cuts open side view.
With reference to Fig. 3, Fig. 4 and Fig. 5, grinding unit 300 can comprise press section 310, vertical arm 320, rocking arm portion 330 and drive division 340.
Particularly, during milled processed, press section 310 is arranged in to wafer 70 tops that are fixed on spin head 110.Press section 310 rotates in the state contacting with wafer 70, with grinding wafers 70.In 310 grinding wafers 70 of press section, by the chemical liquid for wafer 70, slurry (slurry) is provided to the end face of wafer 70.
Vertically arm 320 is fixed on the upper end of press section 310.Vertically arm 320 extends vertically from the end face of spin head 110, and is driven by the torque providing from drive division 340, to rotate around longitudinal central axial line.Below with reference to Fig. 6, describe press section 310 and the vertically configuration of arm 320 in detail.
Rocking arm portion 330 is arranged in vertical arm 320 tops.Rocking arm portion 330 can comprise shaft-like rotary shell 331 and torque is transmitted to the pulley assemblies of vertical arm 320 from drive division 340.One side of rotary shell 331 is coupled to vertical arm 320, and opposite side is coupled to drive division 340.
Drive division 340 can comprise the first CD-ROM drive motor 341 for rotating arm portion 330, for the second CD-ROM drive motor 342 of rotary vertically straight-arm portion 320 and for regulating the vertical moving part 343 of the vertical position of press section 310.
The first CD-ROM drive motor 341 is coupled to rotary shell 331, to provide torque to rotary shell 331.The first CD-ROM drive motor 341 alternately and repeatedly provides clockwise torque and torque counterclockwise.So, by drive division 340, rocking arm portion 330 is waved around central axial line, rocking arm portion 330 is coupled to drive division 340 at described central axial line place.When carrying out milled processed, due to the operation of waving of rocking arm portion 330, press section 310 can be on the top of wafer 70 with circular-arc flatly reciprocal.
The second CD-ROM drive motor 342 is arranged in the first CD-ROM drive motor 341 belows.The second CD-ROM drive motor 342 provides torque to pulley assemblies.Pulley assemblies is transmitted to vertical arm 320 by the torque of the second CD-ROM drive motor 342.Pulley assemblies is built in rotary shell 331, and can comprise driving wheel 332, driven pulley 333 and driving-belt 334.Driving wheel 332 is arranged in the first CD-ROM drive motor 341 tops, and is coupled to the side through the vertical arm 344 of the first CD-ROM drive motor 341.The second CD-ROM drive motor 342 is coupled to the opposite side of vertical arm 344.
Driven pulley 333 is towards driving wheel 332.Driven pulley 333 is arranged in vertical arm 320 tops and is coupled to vertical arm 320.Driving wheel 332 and driven pulley 333 are connected to each other by driving-belt 334.Driving-belt 334 is being wound around driving wheel 332 and driven pulley 333.
The torque of the second CD-ROM drive motor 342 is delivered to driving wheel 332 by vertical arm 344.So, driving wheel 332 rotations.The torque of driving wheel 332 is delivered to driven pulley 333 by driving-belt 334.So, driven pulley 333 rotations.The transmission of torque of driven pulley 333 is to vertical arm 320.So, press section 310 and vertically arm 320 rotations.
Vertically moving part 343 is arranged in the rear side of the first CD-ROM drive motor 341 and the second CD-ROM drive motor 342.Vertically moving part 343 can comprise ball-screw 343a, nut 343b and the 3rd CD-ROM drive motor 343c.Ball-screw 343a is shaft-like, and arranges vertically about ground surface.It is upper that nut 343b is arranged on ball-screw 343a, and be fixed on the second CD-ROM drive motor 342.The 3rd CD-ROM drive motor 343c is arranged in ball-screw 343a below.The 3rd CD-ROM drive motor 343c can be coupled to ball-screw 343a, ball-screw 343a is provided to clockwise torque and torque counterclockwise.Ball-screw 343a is rotated clockwise or counterclockwise by the 3rd CD-ROM drive motor 343c.By the rotation of ball-screw 343a, nut 343b is moved vertically along ball-screw 343a.So the second CD-ROM drive motor 342 that is coupled to nut 343b moves vertically together with nut 343b.Along with the second CD-ROM drive motor 342 moves vertically, the first CD-ROM drive motor 341 and rocking arm portion 330 move vertically, so vertically also move vertically arm 320 and press section 310.
Although in the present embodiment, vertically moving part 343 comprises that ball-screw 343a, nut 343b and the 3rd CD-ROM drive motor 343c are used linear motor method that vertical locomotivity is provided, yet the invention is not restricted to this.For example, vertically moving part 343 can comprise that cylinder (cylinder) is to provide vertical locomotivity.
The first CD-ROM drive motor 341, the second CD-ROM drive motor 342, ball-screw 343a, nut 343b and vertical arm 344 are built in drive shell 345.Drive shell 345 in the vertical directions are elongated rod shape.
Below, with reference to accompanying drawing, describe press section 310 and vertical arm 320 in detail.
Fig. 6 means the press section of Fig. 5 and the vertical cross-sectional view of vertical arm.
With reference to Fig. 2, Fig. 5 and Fig. 6, vertically arm 320 is rotated by the torque of transmitting from drive division 340 so that press section 310 rotations, and provide air to press section 310 to control the pressure of pressing wafer 70.
Particularly, vertically arm 320 can comprise housing 321, rotating shaft 322, rotary connector 323, clutch shaft bearing 324a and the second bearing 324b and the first asessory shaft 325a and the second asessory shaft 325b.
Housing 321 is approximately circular tube shaped.The upper end of housing 321 embeds the rotary shell 331 of rocking arm portion 330.So the upper end of housing 321 is coupled to rotary shell 331 and lower end is coupled to press section 310.
Rotating shaft 322 is arranged in housing 321 and separates with housing 321.Rotating shaft 322 extends with the longitudinal direction of housing 321, and at middle part, comprises air duct 322a.Air duct 322a extends with the longitudinal direction of rotating shaft 322.Rotating shaft 322 is connected in driven pulley 333, and by the torque actuated of driven pulley 333 for to rotate around longitudinal central axial line.The upper end of rotating shaft 322 is coupled to rotary connector 323, and rotary connector 323 provides air to the air duct 322a of rotating shaft 322 and is fixed on driven pulley 333.Rotary connector 323 comprises rotating part and fixed part, and rotating part is fixed on driven pulley 333, thereby rotating part is rotated by the torque of driven pulley 333.The fixed part of rotary connector 323 is connected in for the air pipe line 80 of air is provided.The air providing from air pipe line 80 is incorporated into air duct 322a by rotary connector 323, and flows to press section 310 along air duct 322a.
Clutch shaft bearing 324a and the second bearing 324b are arranged between housing 321 and rotating shaft 322.Clutch shaft bearing 324a is connected housing 321 with the second bearing 324b with rotating shaft 322, and supporting rotating shaft 322, and rotating shaft 322 is stably rotated.Clutch shaft bearing 324a is arranged near rocking arm portion 330, and the second bearing 324b is arranged near press section 310.The inner ring of clutch shaft bearing 324a and the second bearing 324b is arranged on rotating shaft 322, so rotation together with rotating shaft 322.The outer ring of clutch shaft bearing 324a and the second bearing 324b is coupled to housing 321, so this outer ring does not rotate when rotating shaft rotates.So, only rotating shaft 322 rotations, and housing 321 does not rotate.
Between rotating shaft 322 and housing 321, can be furnished with the first asessory shaft 325a and the second asessory shaft 325b.The first asessory shaft 325a arranges and protects housing 321 along the inwall of housing 321.The second asessory shaft 325b is round the outer wall of rotating shaft 322, and protects rotating shaft 322.
The lower end of rotating shaft 322 is fixed in press section 310.Press section 310 can comprise grinding pad 311, grind housing 312, upper dish 313 and lower wall 314, pad support 315, terminal pad 316 and bellows 317.
Grinding pad 311 is for plate-like and be approximately circular.During milled processed, grinding pad 311 rotations are with grinding wafers in the state of the end face of the bottom surface contact wafer at grinding pad 311.The diameter of grinding pad 311 is less than the diameter of wafer.During milled processed, grinding pad 311 is waved with grinding wafers by drive division 340.As mentioned above, because the diameter of grinding pad 311 is less than the diameter of wafer, thus grinding unit 300 grinding wafers partly, and avoid specific region over-lapping.
Grind housing 312 and be arranged in grinding pad 311 tops.Grind housing 312 and be approximately circular, and comprise dish 313 and lower wall 314 and be positioned at bellows 317 wherein.In the central end face of grinding housing 312, be furnished with connecting hole, and in connecting hole, be furnished with terminal pad 316.Terminal pad 316 separates with grinding housing 312, and is fixed on the rotating shaft 322 of vertical arm 320.
Upper dish 313 is fixed on the bottom surface of terminal pad 316, and lower wall 314 separates with the below of upper dish 313.Pad support 315 is coupled to the bottom surface of lower wall 314, and grinding pad 311 is coupled to the bottom surface of pad support 315.
Bellows 317 is arranged in the space between lower wall 314 and upper dish 313.Bellows 316 is formed by metal material, and the air providing from the air duct 322a of rotating shaft 322 is provided.Bellows 316 is expanded vertically and compresses by air pressure.When carrying out milled processed, bellows 317 expands vertically, thereby grinding pad 311 is because of air pressure contact wafer closely.When bellows 316 waits and bides one's time (referring to Fig. 2) above substrate supporting unit 100, bellows 316 is compressed by the vacuum pressure providing from air duct 322a.So grinding pad 311 separates with the wafer being positioned on substrate supporting unit 100.
As mentioned above, because the bellows 317 that is expanded and compressed by air pressure is used in press section 310, therefore during milled processed, grinding pad 311 can tilt according to the end face shape of wafer.
Referring again to Fig. 1～Fig. 3, a side of substrate supporting unit 100 is furnished with pad support component 401, and this pad support component 401 is arranged in bowl unit 200.When the edge of grinding wafers 70, pad support component 401 supports the part of grinding pads 311 (referring to Fig. 6), to avoid the outside of grinding pad 311 tendency wafers 70.Below with reference to Fig. 7 and Fig. 8, describe the configuration of pad support component 401 in detail.
The the first processing fluid feeding unit 510 and the second processing fluid feeding unit 520 that are arranged in the outside of bowl unit 200 are ejected into by the grinding of wafer 70 and the required processing fluid of cleaning treatment the wafer 70 that is fixed on substrate supporting unit 100.Carefully, first processes the sidewall 221 that fluid feeding unit 510 is fixed on the second processing bowl 220 to tool.When carrying out milled processed or cleaning treatment, first processes fluid feeding unit 510 is ejected on the wafer 70 that is fixed on spin head 110 processing fluid, to process wafer 70.In the present embodiment, can be for for cleaning or dry the treat liquid of wafer 70 or for drying the dry gas of wafer 70 from the processing fluid of the first processing fluid feeding unit 510 ejection.
In example of the present invention, although the first processing fluid feeding unit 510 comprises four injection nozzles, yet the number of injection nozzle can increase or reduce according to the number of the processing fluid for clean wafers 70.
Second processes fluid feeding unit 520 can wave, and treat liquid is ejected on the wafer 70 that is fixed on spin head 110.The treat liquid that is provided to the second processing fluid feeding unit 520 can be slurry.In milled processed, slurry can be sprayed onto wafer 70 by separated chemical liquid infusion parts (not shown), and does not use the second processing fluid feeding unit 520.
After carrying out milled processed, brush unit 610 is physically removed the lip-deep foreign substance that residues in wafer 70.Brush unit 610 can wave and comprise brush pad.The surface of brush pad contact wafer 70, physically to brush off the lip-deep foreign substance that residues in wafer 70.When carrying out cleaning treatment, brush unit 610 waves operation by it brush shield is placed in to spin head 110 tops, and rotating brush pad is to clean the wafer 70 that is fixed on spin head 110.
Sprayer unit 620 is arranged in a side of brush unit 610.Sprayer unit 620 is ejected into the treat liquid with fine particle with high pressure on the wafer 70 that is fixed on spin head 110, to remove the lip-deep foreign substance that residues in wafer 70.For example, use ultrasonic wave, sprayer unit 620 ejections are the treat liquid of fine particle form.Brush unit 610 is for removing the foreign substance with relatively large particle, and sprayer unit 620 is for removing the foreign substance with relative small-particle.
When grinding unit 300 is arranged in the initial position (home port) in holding state, pad regulon 700 cleans and reclaims grinding unit 300.That is, on the surface of the contact wafer of grinding pad 311 (referring to Fig. 6), be formed with predetermined abrasive pattern, to improve the efficiency of milled processed.When wafer is carried out to milled processed, abrasive pattern can be gradually by the fretting wear of wafer.Equally, can be in abrasive pattern sclerosis (harden) for the chemical liquid of milled processed.Pad regulon 700 can grind the surface of grinding pad 311 to recycle grinding pad 311.
Below, with reference to accompanying drawing, describe the configuration of pad support component 401 in detail.
Fig. 7 means the stereogram of the pad support component shown in Fig. 3.Fig. 8 means the schematic diagram of the relative position between pad support component, substrate supporting unit and the grinding unit shown in Fig. 7.
With reference to Fig. 2, Fig. 7 and Fig. 8, pad support component 401 is arranged in a side of substrate supporting unit 100, and separates with substrate supporting unit 100.When the edge of grinding wafers 70, the lapped face of the grinding pad 311 of contact wafer 70 is partly supported by pad support component 401, to avoid the outside of grinding pad 311 tendency wafers 70.
Particularly, pad support component 401 can comprise supportive body 410 and pad portion 420.Supportive body 410 is fixed on the bottom surface 231 of bowl unit 200, and is 231 columns that extend to the end face of bowl unit 200 from bottom surface.
The upper end of supportive body 410 is fixed in pad portion 420, and is adjacent to spin head 110.Pad portion 420 separates with spin head 110, and when the edge of grinding wafers 70, is used for supporting the part of grinding pad 311.
Pad portion 420 can comprise be fixed on supportive body 410 connection main body 421, be coupled to the supporting disk 422 of the end face that connects main body 421 and the supporting pad 424 that supports the part of grinding pad 311 when the edge of grinding wafers 70.Connect main body 421 and be coupled to removedly supportive body 410 by the first screw 430, and be column.Supporting disk 422 is coupled to removedly and is connected main body 421 by the second screw 423, and has end face and the side surface being covered by supporting pad 424.
Supporting pad 424 is formed by synthetic resin, and when the edge of grinding wafers 70, and supporting pad 424 supports the outside that is exposed to wafer 70 of grinding pads 311 and the part of contact wafer 70 not.For example, supporting pad 424 has circular end face, and its area is less than the area of grinding pad 311.
When from the side, the end face of the end face of supporting pad 424 and wafer 70 is arranged on the same line.That is, the height of the end face of supporting pad 424 is identical with the height of wafer 70 that is fixed on spin head 110.Supporting pad 424 is arranged on the moving track or its extended line of grinding pad 311.That is, supporting pad 424 is arranged in grinding pad 311 and can waves on the mobile mobile route of operation by it.For example, the radius of grinding pad 311 is equal to or less than distance between supporting pad 424 and spin head 110 and the width sum of supporting pad 424.So supporting pad 424 can stably support grinding pad 311.
Like this, when the edge of grinding wafers 70, grinding pad 311 is stably supported by spin head 110 and supporting pad 424, so, avoided the outside of grinding pad 311 tendency wafers 70.Therefore, in the edge of grinding wafers 70, the grinding defect that substrate grinding unit 1000 can be avoided the edge breakage of wafer 70 and cause due to the inclination of grinding pad 311, and improve product yield.
During due to edge when grinding wafers 70, supporting pad 424 and spin head 110 support grinding pads 311, therefore the end face of supporting pad 424 is polished pad 311 wearing and tearing.When the excessive wear of supporting pad 424, the end face of supporting pad 424 is even lower than the end face of wafer 70.Therefore,, although there is supporting pad 424 to support grinding pads 311 when the edge of grinding wafers 70, grinding pad 311 still may be inclined to the outside of wafer 70.For avoiding grinding pad 311 to tilt, need to change supporting pad 424.At this moment, after supporting disk 422 is removed supporting pad 424, supporting pad 424 can be replaced with to new supporting pad, or can remove supporting disk 422 together with supporting pad 424, to change.
For the degree of wear of sensing supporting pad 424, substrate supporting unit 100 can comprise primary importance detecting part 710, and the height of the end face that this primary importance detecting part 710 can sensing supporting pad 424 is with the vertical position value of the end face of output supporting pad 424.Primary importance detecting part 710 is arranged in supporting pad 424 tops, and the vertical position value of the end face of supporting pad 424 is offered to control module 60.Control module 60 checks whether the vertical position value of supporting pad 424 exceeds default vertical position scope, and determines whether to change supporting pad 424.
Below, while describing wherein the edge when grinding wafers 70 in detail with reference to accompanying drawing by the processing of padding support component 401 support grinding pads 311.
Fig. 9 means the flow chart of the processing of the substrate grind section grinding wafers shown in Fig. 2.Figure 10 means the schematic diagram of the processing of the pad support member supports grinding pad shown in Fig. 8 when grinding wafers edge.
With reference to Fig. 9 and Figure 10, in operation S110, wafer 70 is placed on the end face of spin head 110.
Subsequently, in operation S120, grinding pad 311 is arranged on the end face of wafer 70.
Subsequently, in operation S130, spin head 110 rotation is so that wafer 70 rotations, and simultaneous grinding pad 311 rotations and press wafer 70, with grinding wafers 70.When grinding wafers 70, slurry is provided to the end face of wafer 70, and the grinding pad 311 of grinding wafers 70 rotation and waving, to change the position with respect to wafer 70.
When grinding wafers 70, grinding pad 311 waves by it edge that operation moves to wafer 70, with the edge of grinding wafers 70.At this moment, the end face of supporting pad 424 support the not contact wafer 70 of grinding pad 311 part, be the part that grinding pad 311 is exposed to the outside of wafer 70.Therefore, pad support component 401 has been avoided the outside of grinding pad 311 tendency wafers 70.
Figure 11 means the schematic diagram of another example of the pad support component shown in Fig. 8.Figure 12 means the schematic diagram of the processing of the pad support member supports grinding pad shown in Figure 11 when grinding wafers edge.
With reference to Figure 11 and Figure 12, pad support component 402 can comprise supportive body 410, pad portion 420 and position-regulation portion 440.Except position-regulation portion 440, the configuration of pad support component 402 is identical with the configuration of the pad support component 401 shown in Fig. 8.So, with same reference numerals, represent the parts identical with the pad support component 401 shown in Fig. 8, and omit its description.
Position-regulation portion 440 is fixed on the bottom of supportive body 410, and movable support main body 410 vertically, with the end face of spacer portion 420, be the height of the end face of supporting pad 424.In the present embodiment, position-regulation portion 440 consists of cylinder, but can consist of CD-ROM drive motor.
Position-regulation portion 440 can be connected in control module 60 and be controlled by control module 60.; the value that control module 60 receives the vertical position value of the end face of supporting pad 424, exports from primary importance detecting part 710; and according to the vertical position value control position adjusting portion 440 receiving; identical with preset height so that the height of the end face of supporting pad 424 is adjusted to, for example identical with the height of the end face of wafer 70.
Figure 13 means the schematic diagram of another example of the pad support component shown in Fig. 8.
With reference to Figure 13, pad support component 403 is arranged in a side of substrate supporting unit 100, and separates with substrate supporting unit 100.When the edge of grinding wafers 70, the lapped face of the not contact wafer 70 of grinding pad 311 is partly supported by pad support component 403, to avoid the outside of grinding pad 311 tendency wafers 70.
Particularly, pad support component 403 can comprise supportive body 450, pad portion 460, connecting portion 470 and position-regulation portion 480.Supportive body 450 is fixed on the bottom surface 231 (referring to Fig. 3) of bowl unit 200, and for extend to the column of end face from the bottom surface 231 of bowl unit 200.
Connecting portion 470 is coupled to the upper end of supportive body 450, make connecting portion 470 activity vertically, and the upper end of connecting portion 470 is fixed in pad portion 460.Pad portion 460 neighboringly separates with spin head 110, and when the edge of grinding wafers 70, supports the part of grinding pad 311.
Pad portion 460 can comprise supporting disk 461 and supporting pad 462, and supporting disk 461 is coupled to the end face of connecting portion 470, and supporting pad 462 supports the part of grinding pad 311 when the edge of grinding wafers 70.The upper surface of supporting disk 461 and side surface can be covered by supporting pad 462.
Supporting pad 462 is formed by synthetic resin, and when the edge of grinding wafers 70, supports grinding pad 311 and be exposed to the outside of wafer 70 and the part of contact wafer 70 not.For example, supporting pad 462 has circular end face, and area is less than the area of grinding pad 311.
Supporting pad 462 is arranged on the moving track or its extended line of grinding pad 311.That is, supporting pad 462 is arranged in grinding pad 311 and can waves on the mobile mobile route of operation by it.For example, the radius of grinding pad 311 is equal to or less than distance between supporting pad 462 and spin head 110 and the width sum of supporting pad 462.So supporting pad 462 can stably support grinding pad 311.
Like this, when the edge of grinding wafers 70, grinding pad 311 is stably supported by spin head 110 and supporting pad 462, so, avoided the outside of grinding pad 311 tendency wafers 70.Therefore, in the edge of grinding wafers 70, the grinding defect that substrate grinding unit 1000 can be avoided the edge breakage of wafer 70 and cause due to the inclination of grinding pad 311, and improve product yield.
Supporting pad 462 is coupled to supporting disk 461 removedly.So, when supporting pad 462 has worn and torn scheduled volume when above by grinding pad 311, removable and change supporting pad 462.
Position-regulation portion 480 is arranged between supporting disk 461 and supportive body 450.Position-regulation portion 480 is by air pressure compression and expansion, to regulate the vertical position of supporting pad 462.
Second place detecting part 720 can be arranged between substrate supporting unit 100 and pad support component 403.Second place detecting part 720 sensing grinding pads 311 are with respect to the position of substrate supporting unit 100, so that the horizontal position value of grinding pad 311 to be provided to control module 60.In the present embodiment, second place detecting part 720 is arranged in a side of pad support component 403 discretely, but also can be arranged in grinding unit 300.
Control module 60 is according to the vertical position value control position adjusting portion 480 of the end face of the horizontal position value of the reception of grinding pad 311 and supporting pad 462, to regulate the position of the end face of supporting pad 462.
Figure 14 A and Figure 14 B mean that the end face of the pad support component shown in Figure 13 when grinding wafers is according to the schematic diagram of the height change of the position of grinding pad.
With reference to Figure 14 A, when grinding pad 311 is arranged in the region except the edge of wafer 70, position-regulation portion 480 shrinks to move down supporting pad 462.Therefore, the end face of supporting pad 462 is lower than the end face of wafer 70.
With reference to Figure 14 B, when grinding pad 311 is arranged in the edge of wafer 70, position-regulation portion 480 supporting pad 462 that expands to move up.Therefore, contact grinding pad 311 in the summit portion of supporting pad 462 ground is exposed to the lapped face in the outside of wafer 70, to support grinding pad 311.
According to above-described embodiment, when grinding wafers edge, pad support component partly supports the grinding pad in the outside that is exposed to wafer, so pad support component has avoided grinding pad to be inclined to the outside of wafer in grinding wafers edge.Therefore, during milled processed, substrate grinding unit has improved grinding efficiency, and has avoided the breakage of substrate.
Above disclosed theme should regard illustrative, and not restrictive as, and appending claims is intended to cover and falls into all changes, improvement and other embodiment in true spirit of the present invention and scope.So, at law, allowing to the full extent, scope of the present invention is determined by the explanation of the broad sense being allowed to of appending claims and equivalent thereof, and should not retrained or be limited by detailed description above.
Claims (33)
1. a substrate milling apparatus, it comprises:
Substrate supporting member, is equipped with substrate above it;
Grinding unit, it comprises grinding pad and pad driver part, described grinding pad is arranged in described substrate supporting member top, to grind, be placed in the described substrate in described substrate supporting member, described pad driver part is for mobile described grinding pad, to change described grinding pad with respect to the position of described substrate supporting member;
At least one pads support component, it is arranged in a side of described substrate supporting member, when grinding is positioned at the edge of the described substrate in described substrate supporting member, the supporting pad of described pad support component support described grinding pad not with the part of the lapped face of described substrate contacts, described pad support component also comprises position-regulation portion;
Primary importance detecting part, it is for padding the height of support component described in sensing, to export the vertical position value of the end face of described supporting pad, thus the degree of wear of supporting pad described in sensing; And
Control module, it is for receiving from the described vertical position value of the end face of the described supporting pad of described primary importance detecting part output, and controls described position-regulation portion according to received vertical position value, to regulate the position of the end face of described supporting pad.
2. substrate milling apparatus as claimed in claim 1, also comprises substrate driver part, and it makes described substrate supporting member around the central axial line rotation of described substrate supporting member.
3. substrate milling apparatus as claimed in claim 2, wherein, the area of the described lapped face of described grinding pad is less than the area of the end face of described substrate supporting member.
4. substrate milling apparatus as claimed in claim 3, wherein, described pad driver part waves described grinding pad.
5. substrate milling apparatus as claimed in claim 3, wherein, described pad driver part comprises:
Vertical arm, it is connected in described grinding pad and extends vertically, and rotates described grinding pad around the central axial line of described vertical arm;
Swingable rocking arm, its be connected in described vertical arm upper end so that described grinding pad wave; And
Drive division, it is connected in one end of described rocking arm, and described rocking arm is provided for waving the torque of described rocking arm, and the torque that described vertical arm is provided for rotating described vertical arm by described rocking arm.
6. substrate milling apparatus as claimed in claim 4, wherein, described pad support component is arranged on the moving track of described grinding pad or on the extended line of the moving track of described grinding pad.
7. substrate milling apparatus as claimed in claim 6, wherein, described moving track is arcuation.
8. the substrate milling apparatus as described in any one of claim 1 to 7, also comprises a bowl unit, the inner side that it has open top and is furnished with described pad support component.
9. substrate milling apparatus as claimed in claim 8, wherein, described pad support component comprises:
Supportive body, it is arranged in a side of described substrate supporting member; And
Described supporting pad, it is coupled to the top of described supportive body and separates with described substrate supporting member, and for support described grinding pad when grinding the edge of described substrate.
10. substrate milling apparatus as claimed in claim 9, wherein, described supporting pad is coupled to described supportive body removedly.
11. substrate milling apparatus as claimed in claim 9, wherein, described supportive body is fixed on the bottom surface of described bowl unit.
12. substrate milling apparatus as claimed in claim 9, wherein, described position-regulation portion is for moving vertically described supportive body or described supporting pad, to regulate the vertical position of described supporting pad.
13. substrate milling apparatus as claimed in claim 12, wherein, described position-regulation portion comprises CD-ROM drive motor or cylinder, and described CD-ROM drive motor or described cylinder are fixed on the bottom of described supportive body.
14. substrate milling apparatus as claimed in claim 1, also comprise second place detecting part, and it is the horizontal level with respect to described substrate supporting member for grinding pad described in sensing, described control module is provided to the horizontal position value of described grinding pad.
15. substrate milling apparatus as claimed in claim 14, wherein, described control module is controlled described position-regulation portion according to the described horizontal position value of described grinding pad receiving and the described vertical position value of the end face of described supporting pad, to regulate the position of the end face of described supporting pad.
16. substrate milling apparatus as claimed in claim 15, wherein, described position-regulation portion comprises the bellows that is expanded by air pressure and compress, and
Described bellows is arranged between described supportive body and described supporting pad, and by compression and expansion, regulates the vertical position of described supporting pad.
17. substrate milling apparatus as claimed in claim 9, wherein, described supportive body is column, and
The area of the end face of described supporting pad is less than the area of the described lapped face of described grinding pad.
18. substrate milling apparatus as claimed in claim 9, wherein, the radius of described grinding pad is equal to or less than distance between described supporting pad and described substrate supporting member and the width sum of described supporting pad.
19. substrate milling apparatus as claimed in claim 9, wherein, described supporting pad has circular end face, and the radius of described grinding pad is equal to or less than distance between described supporting pad and described substrate supporting member and the width sum of described supporting pad.
20. substrate milling apparatus as claimed in claim 9, wherein, described supporting pad is formed by synthetic resin.
21. 1 kinds of substrate milling apparatus, it comprises:
Bowl unit, it has open top;
Rotatable substrate supporting member, is equipped with substrate and is arranged in described bowl unit above it;
Grinding unit, it comprises grinding pad and pad driver part, described grinding pad is arranged in described substrate supporting member top, to grind and to be placed in the described substrate in described substrate supporting member in milled processed, described pad driver part is for moving to the fringe region of described substrate or the described fringe region of described substrate position in addition by described grinding pad from being placed in the middle section of the described substrate described substrate supporting member;
Pad support component, it is arranged in described bowl unit, and comprises the supporting pad that separates and be arranged in a side of described substrate supporting member with described substrate supporting member, and described pad support component also comprises position-regulation portion; And
Primary importance detecting part, it is for padding the height of support component described in sensing, to export the vertical position value of the end face of described supporting pad, thus the degree of wear of supporting pad described in sensing; And
Control module, it is for receiving from the described vertical position value of the end face of the described supporting pad of described primary importance detecting part output, and controls described position-regulation portion according to received vertical position value, to regulate the position of the end face of described supporting pad.
22. substrate milling apparatus as claimed in claim 21, wherein, described pad support component comprises:
Supportive body, it is arranged in a side of described substrate supporting member; And
Described supporting pad, it is coupled to the top of described supportive body and separates with described substrate supporting member, and for support described grinding pad when grinding the edge of described substrate.
23. substrate milling apparatus as claimed in claim 22, wherein, described position-regulation portion is coupled to described supportive body or described supporting pad, and for moving vertically described supportive body or described supporting pad, to regulate the vertical position of described supporting pad.
24. substrate milling apparatus as described in any one of claim 21 to 23, wherein, the radius of described grinding pad is equal to or less than distance between described supporting pad and described substrate supporting member and the width sum of described supporting pad.
25. 1 kinds of substrate Ginding process, it comprises:
Substrate is placed in substrate supporting member;
Grinding pad is positioned over to described substrate supporting member top; And
In at least one rotation in making described substrate supporting member and described grinding pad, with described grinding pad, press and grind described substrate,
Wherein, the supporting pad that the described grinding of described substrate is included in to pad support component supports the edge of substrate described in the simultaneous grinding of the part that does not contact described substrate of described grinding pad, and described pad support component also comprises position-regulation portion,
By padding the height of support component described in primary importance detecting part sensing, to export the vertical position value of the end face of described supporting pad, thus the degree of wear of supporting pad described in sensing; And
By control module, receive the described vertical position value of the end face of the described supporting pad of exporting from described primary importance detecting part, and control described position-regulation portion according to received vertical position value, to regulate the position of the end face of described supporting pad.
26. substrate Ginding process as claimed in claim 25, wherein, the diameter of described grinding pad is less than the diameter of described substrate, and described grinding pad moves to the described edge of described substrate from the middle section of described substrate, to grind described substrate.
27. substrate Ginding process as claimed in claim 26, wherein, described grinding pad waves on the top of described substrate, to grind described substrate.
28. substrate Ginding process as described in any one of claim 25 to 27, wherein, when from the side, the end face that contacts described grinding pad of the end face of described pad support component and described substrate is arranged on the same line.
29. substrate Ginding process as claimed in claim 28, wherein, comprise the described grinding at the described edge of described substrate:
Described in sensing, pad the vertical position of the end face of support component; And
According to the value of the vertical position of described sensing, regulate the vertical position of the end face of horizontal adjustment section, thereby when from the side, the end face of described pad support component and the end face of described substrate are arranged on the same line.
30. substrate Ginding process as claimed in claim 29, wherein, when described grinding pad grinds the described edge of described substrate, carry out the described sensing of the described vertical position of the end face of described pad support component and the described adjusting to the described vertical position of the end face of described pad support component.
31. substrate Ginding process as claimed in claim 25, wherein, the described grinding of described substrate comprises:
The horizontal level of the described grinding pad described in sensing on substrate; And
According to the value of the described horizontal level of described grinding pad, regulate the vertical position of the end face of described pad support component.
32. substrate Ginding process as claimed in claim 31, wherein, comprise the described adjusting of the described vertical position of the end face of described pad support component:
When described grinding pad is arranged in the region except the described edge of described substrate, move down the end face of described pad support component, so that when from the side, the end face of described pad support component is arranged in the end face below of described substrate; And
When described grinding pad is arranged in the described edge of described substrate, the end face of the described pad support component that moves up, make grinding pad described in described pad support member supports not with the part of the lapped face of described substrate contacts.
33. substrate Ginding process as claimed in claim 32, wherein, the step of the end face of the described pad support component that moves up comprises:
The vertical position of the end face of sensing horizontal adjustment section; And
The described vertical position that regulates the end face of described pad support component, makes when from the side, and the end face of described pad support component and the end face of described substrate are arranged on the same line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090067936A KR101170760B1 (en) | 2009-07-24 | 2009-07-24 | Substrate polishing apparatus |
| KR10-2009-0067936 | 2009-07-24 |
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| CN101961853A CN101961853A (en) | 2011-02-02 |
| CN101961853B true CN101961853B (en) | 2014-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010238451.0A Active CN101961853B (en) | 2009-07-24 | 2010-07-23 | Substrate polishing apparatus and method of polishing substrate using the same |
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| US (1) | US20110021115A1 (en) |
| JP (1) | JP5343942B2 (en) |
| KR (1) | KR101170760B1 (en) |
| CN (1) | CN101961853B (en) |
| TW (1) | TWI445071B (en) |
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| KR101004435B1 (en) * | 2008-11-28 | 2010-12-28 | 세메스 주식회사 | Substrate polishing apparatus and method of polishing substrate using the same |
| WO2014149755A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Design of disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing |
| CN105659362B (en) * | 2013-10-23 | 2019-11-26 | 应用材料公司 | Polishing system with regional area rate control |
| US9373524B2 (en) | 2014-04-23 | 2016-06-21 | International Business Machines Corporation | Die level chemical mechanical polishing |
| CN105397596A (en) * | 2015-10-21 | 2016-03-16 | 无锡清杨机械制造有限公司 | Mechanical grinding equipment |
| TWI730044B (en) * | 2016-03-15 | 2021-06-11 | 日商荏原製作所股份有限公司 | Substrate grinding method, top ring and substrate grinding device |
| SG11201902651QA (en) * | 2016-10-18 | 2019-05-30 | Ebara Corp | Substrate processing control system, substrate processing control method, and program |
| JP7108450B2 (en) * | 2018-04-13 | 2022-07-28 | 株式会社ディスコ | Polishing equipment |
| WO2020139605A1 (en) * | 2018-12-26 | 2020-07-02 | Applied Materials, Inc. | Polishing system with platen for substrate edge control |
| JP7220648B2 (en) | 2019-12-20 | 2023-02-10 | 株式会社荏原製作所 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| JP7387471B2 (en) | 2020-02-05 | 2023-11-28 | 株式会社荏原製作所 | Substrate processing equipment and substrate processing method |
| US11919120B2 (en) | 2021-02-25 | 2024-03-05 | Applied Materials, Inc. | Polishing system with contactless platen edge control |
| CN114454085B (en) * | 2021-12-28 | 2022-09-30 | 华海清科股份有限公司 | Chemical mechanical polishing method and polishing system |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201117278A (en) | 2011-05-16 |
| JP5343942B2 (en) | 2013-11-13 |
| CN101961853A (en) | 2011-02-02 |
| KR101170760B1 (en) | 2012-08-03 |
| JP2011029643A (en) | 2011-02-10 |
| US20110021115A1 (en) | 2011-01-27 |
| KR20110010391A (en) | 2011-02-01 |
| TWI445071B (en) | 2014-07-11 |
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