TW523443B - Polishing head, polishing device and polishing method - Google Patents

Abstract

Polishing head (11) is provided with a disk-like carrier (16) for holding one face of wafer W underneath the carrier (16), and a retainer/ring-shaped retainer ring (17) which abuts the polishing pad (4) during the polishing process, the retainer ring (17) having a inner peripheral surface (17a) for fixedly engaging with the outer periphery of wafer W. A supply path (32) for supplying a slurry or cleaning liquid to carrier (16) is formed in a clearance K between the outer peripheral surface (16a) and the inner peripheral surface. The supply path (32) is connected to a slurry/cleaning liquid supply device (31) which selectively supplies either one of the slurry and the cleaning liquid.

Description

523443 V. Description of the invention (l) [Technical scope] The present invention relates to a silicon wafer suitable for untreated silicon wafers (bare wafers) with a Si Ge layer formed on the surface. A semiconductor wafer in a manufacturing process, or a polishing head, a polishing device, and a device for polishing a surface of a material to be polished having a flat surface of a hard disk substrate, a liquid crystal substrate, an optical component lens, etc. (hereinafter, referred to as a wafer w). Grinding method of a material to be ground using the device. [Background Art] In recent years, "with the increasing integration of semiconductor manufacturing equipment, the fineness of patterns has been progressively progressing", especially in order to enable the formation of fine patterns in multilayer structures to be more easily and reliably performed. Surface planarization of semiconductor wafers is also becoming more important. For example, the pattern formation is performed using a light micro-scape>, but as the pattern becomes smaller, the focal depth of the light micro-shadow becomes shallower. On the same day t ', in order to ensure the accuracy of the pattern, or to facilitate the focus adjustment during exposure,' it is necessary to control the unevenness on the wafer surface to a level lower than the depth of focus (that is, flatten). In addition, in the polishing of bare wafers, as wafers become larger in diameter, the requirements for flattening become more stringent. (While wafers are used as examples here, the materials to be polished other than these wafers 'For example, the polishing of hard disk substrates and liquid crystal substrates also requires high-precision planarization of the surface). Here, the chemical mechanical polishing method (CMP method) has been valued in view of the fact that the film on the surface can be flattened with high accuracy and the film can be buried in the recess on the wafer surface. The CMP method uses an alkaline polishing solution using Si02 or a medium using Ce02.

523443 5. Description of the invention (2) A method for polishing or flattening the surface of a wafer by a chemical formula 'mechanical method' using an abrasive polishing liquid such as A 1203 or an acidic polishing liquid of A 1203, and a polishing liquid such as an abrasive. A polishing apparatus using a CMP method to polish the surface of a wafer is, for example, a polishing apparatus shown in an enlarged perspective view of an important part shown in FIG. 15, which is most commonly known. This polishing apparatus 1 is provided with a polishing pad 4 made of, for example, hard urethane (urine burning) on a circular plate-shaped fixing table 3 mounted on a central axis 2 as shown in FIG. A polishing head 5 which is driven to rotate by a polishing head drive mechanism (not shown) is disposed at a position opposite to the polishing pad 4 and offset from the central axis 2 of the fixed table 3. Although not shown, the polishing head 5 has a disc-shaped carrier for fixing one side of the wafer w underneath it, and a ring-shaped fixing ring arranged concentrically on the outer periphery of the carrier. The fixing ring is used to abut the polishing pad 4 during polishing, and while holding the outer periphery of the wafer W fixed to the carrier on the inner peripheral surface, the polishing pad 4 is pressed down to control the wafer W located on the outer periphery. Deformation of the nearby polishing pad 4 ensures the polishing accuracy of the wafer W. In addition, with the polishing apparatus 1, when the wafer W is polished, the polishing liquid S is supplied to the vicinity of the rotation center c of the polishing pad 4. The polishing liquid S flows over the polishing pad 4 and absorbs the centrifugal force 'generated by the rotation of the polishing pad 4, diffuses on the polishing pad 4 toward the outer peripheral side in the radial direction, and flows on the surface fixed to the polishing head 5. Between the wafer W and the polishing pad 4. In this state, the wafer w fixed to the polishing head 5 rotates and the polishing pad 4 rotates about the central axis 2 at the same time. Therefore, one side of the wafer w can be polished on the polishing pad 4.

313337.ptd Page 8 523443 V. Description of the invention (3) In this kind of polishing device 1, in order to first adjust the surface state of the polishing pad 4 'only perform a slight grinding operation (trimming) of the surface of the polishing pad 4' Liquid such as pure water is supplied to the polishing pad. After that, the polishing of wafer W is ordered using polishing liquid S (sometimes, wafer w is polished and trimmed at the same time). After polishing, pure water is supplied to the surface of polishing pad 4, and the pure water is used instead of polishing liquid S. The wafer w is polished. Thereby, the surface of the wafer w can be cleaned (rinsing and polishing). The new wafer W is polished one after another with these steps as a cycle. In this way, when the wafer w is polished after trimming or the previous polishing, the polishing liquid S is supplied to the polishing pad 4 and the pure water remaining on the polishing pad 4 is pushed by the flowing surface of the polishing liquid S. Wait until the liquid is ground. However, it takes a considerable amount of time for the polishing liquid S to be completely diffused on the polishing pad 4. Therefore, the polishing liquid S is diluted by the liquid remaining on the polishing pad 4 in the initial stage of polishing. Therefore, the wafer W is polished in such a manner that the concentration of the polishing liquid varies across the polishing pads 4. In addition, the polishing liquid S may flow out due to the centrifugal force generated by the rotation of the fixed table 3, or the barrier ring may not reach the surface of the wafer fixed on the inner peripheral side of the fixed ring due to the barrier formed by the fixed ring. The case where the central part of W is not easily polished. Therefore, the polishing efficiency of the wafer W is reduced or the in-plane uniformity of the wafer w is reduced. Therefore, 'if the liquid on the polishing pad 4 is pushed by the flow of the polishing liquid s supplied to the polishing pad 4', and the polishing of the wafer W is performed after the liquid on the polishing pad 4 and the polishing liquid § are replaced with each other ' A large amount of polishing liquid S must be supplied to the polishing pad 4 at the stage before polishing, thereby increasing the consumption of expensive polishing liquid s. For example, in the case of device wafer polishing,

313337.Ptd 523443 V. Description of the invention (4) The cost accounts for about 70% of the consumables cost of the grinding device. Therefore, in order to reduce the consumables cost, it is extremely important to reduce the consumption of polishing liquid. The present invention has been made in view of the above problems, and an object thereof is to provide a polishing head capable of performing good wafer polishing. In addition, the object is to provide a polishing apparatus capable of reducing the consumption of polishing liquid and a method for polishing a material to be ground using the same. [Invention Summary]

In order to solve the above-mentioned problems, the first aspect of the present invention is a polishing head 'for polishing the surface of a polishing pad attached to a solid surface table', while pressing the material to be polished while moving relative to the polishing pad to perform the polishing. The polishing of the material to be polished includes a carrier for fixing one side of the material to be polished to the lower surface thereof, and a concentric arrangement on the outer peripheral side of the carrier for abutting the polishing pad during polishing, and An annular fixing ring whose inner peripheral surface fastens the outer periphery of the material to be ground fixed to the carrier, and is characterized in that a liquid supply is formed between the outer peripheral surface of the carrier and the inner peripheral surface of the fixing ring to supply liquid. Liquid supply path.

The grinding head thus formed is supplied between the outer surface of the carrier holding one side of the material to be ground and the inner peripheral surface of the fixing ring by the liquid through the liquid supply path when the material to be ground is being ground, that is, it is supplied to the surface of the fixed ring. The gap outside the abrasive material does not hinder the rotation of the fixed table or the fixed ring, and it is sufficient for the liquid to be directly supplied between the abrasive material and the abrasive pad. This makes it possible to sufficiently supply the liquid between the material to be polished and the polishing pad. In addition, the liquid ′ supplied between the material to be polished and the polishing pad will be surrounded by the ring, even if it is subjected to rotation by the polishing head or the fixed table =

313337.ptd Page 10 523443 V. Explanation of the invention (5) The centrifugal force caused by (5) is not easy to flow out of the outer periphery of the fixed ring, so that the liquid can be effectively used and the amount of expensive polishing liquid can be reduced, for example. Here, in the grinding head, the carrier is heated by the processing heat generated during grinding of the material to be ground. When thermal deformation occurs, the deformation also affects the material to be fixed on the carrier and reduces the material to be ground. Grinding accuracy. In the polishing head of this form, the carrier is cooled by the liquid passing through the liquid supply path, so that the thermal deformation of the carrier can be reduced and the accuracy of grinding of the material to be polished can be improved. The liquid supply path may be a flow path A provided in the carrier or a flow path B provided in the fixed ring. When the flow path A and the flow path B are provided at the same time, the polishing liquid can be supplied from these two places between the material to be polished and the polishing pad, so the amount of polishing liquid supply can be increased. In addition, the liquid supply path may be connected to a polishing liquid / washing liquid supply mechanism for selectively supplying either a polishing liquid or a cleaning liquid. In particular, the polishing liquid will gradually dry and deteriorate, and it will easily accumulate in the grinding head @ space. Once such a polishing liquid falls on the grinding pad, it will form a cause of scratches on the surface of the abrasive. The grinding related to this form is 5 shells. At the appropriate time when the grinding operation is completed, the supply of the grinding liquid from the grinding liquid / washing liquid supply mechanism to the liquid supply path is stopped, and instead, the liquid ^ supply path is cleaned. This allows the liquid remaining in the liquid supply path # to be washed, and pure water, ten or more, and a polishing liquid between the outer peripheral surface of the carrier and the inner peripheral surface of the fixing ring can be used for cleaning. As for the cleaning solution, for example, a solvent for a polishing solution. In addition, the entire circumference of the outer surface of the carrier can be shaped, hit, and connected to

523443 V. Description of the invention (6) The groove a of the flow path A and the liquid is supplied from the flow path A. In addition, the entire periphery i of the inner peripheral surface of the fixed ring is connected to the channel B and the channel B is supplied with the liquid from the channel b. Forming a connection When the material to be polished and the grinding mill are only supplied locally in%, it will result in only partial grinding of the material being polished. However, the polishing solution states that when the carrier forms the flow path A, the carrier liquid may be provided in the carrier: The polishing solution supplied by the flow path A to the outer peripheral surface of the carrier is curved by a grooved person. And shed from the entire periphery of the outer surface. In ^ Zhou, the flow path can be provided with a groove B in the loop, and the abrasive liquid from the ring to the inner peripheral surface of the fixed ring is used to lead the L channel B to the entire periphery and the inner peripheral surface. Shed all week. Thereby, the inner peripheral surface of the abrasive is supplied from the outer periphery of the material to be polished to the material to be polished, and the polishing amount is uniformly distributed uniformly throughout the material. In between, P: Γ, R stops supplying the polishing liquid from the polishing liquid / cleaning liquid supply mechanism " 丨 L, and replaces it with the cleaning liquid supply channel A, β, thereby allowing the taste liquid = The distribution is formed on the outer peripheral surface of the carrier and inside the fixed ring: the entire range of the clearance in the circumferential direction ... effectively cleans the remaining residues = In addition, the flow path A can also pass through the upper part of the carrier through the outer periphery several The site is formed slightly radially from the center to the outer periphery. Since the polishing liquid can be uniformly supplied to the flow path A, it can be produced by the rotation of the grinding head through the flow path II; when the material is being ground, it is supplied to the flow path A by the centrifugal force generated by the house. Grinding fluid

Page 12

IH 523443 5. Description of the invention (7) It will be discharged toward the outer peripheral surface, so the polishing liquid can be smoothly supplied to the outer peripheral surface of the carrier. In addition, the liquid supply path is formed in a circular shape, and its diameter may be larger than but smaller than 10 mm. ^ When the diameter of the annular liquid supply path is less than 2mm, the polishing liquid is easy to accumulate, and when it is greater than 10mm, the strength of the body or the fixing ring forming the liquid supply path is reduced, so it is less than 2mm and greater than 1 Omm. The most reasonable reason is that an elastic body that allows relative displacement in the up-down direction and a peripheral surface connection can be provided in the inner gap between the outer peripheral surface of the carrier and the fixing ring, and an opposite body can be provided in the elastic body. The supply port connected to the gap and the grinding head formed by connecting the liquid supply path to the liquid supply path are connected to the carrier fixed on one side by the elastic body and the buckle is ground. Ring on the outer periphery of the wood. Abrasive material The abrasive liquid supplied from the liquid supply path is supplied to the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixed ring via an elastic and 'supply port. In this way, it will not cause the rotation of the fixed table or the fixed ring, which can allow the polishing liquid to be directly supplied to the material to be polished and the grinding replacement. between. In addition, the grinding wheel that is supplied between the material to be polished and the polishing pad is surrounded by the anchor ring. Even if it is subjected to the centrifugal force caused by the rotation of the grinding head or the anchor, it will not easily flow out of the periphery of the anchor ring. , And can be used to spin the polishing liquid. ) Effectively make

523443, description of the invention (8) and easy to accumulate in the gap between the grinding heads. Once such a polishing liquid is formed into a block and dropped on the polishing pad, it will cause scratches on the surface of the abrasive material. Therefore, 'can be connected in the The liquid supply path of the supply port is provided with a polishing liquid / washing liquid supply mechanism which can selectively supply either a polishing liquid or a cleaning liquid. With this structure, the polishing liquid can be supplied to the supply port by the polishing liquid / washing liquid supply mechanism during polishing, and the polishing liquid can be stopped from the polishing liquid / washing after the polishing operation is completed within a day. The liquid supply mechanism is supplied to the 供给 supply port, and is replaced by a cleaning liquid supply supply port, whereby the cleaning liquid can be used to wash the polishing liquid remaining in the supply port 'and the polishing liquid in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixed ring. net. As the cleaning solution, for example, pure water 'or a solvent constituting a polishing solution can be used. In this form, in addition to the fixing ring in the polishing head, the outer periphery of the material to be polished can also be controlled on the outer periphery of the material to be polished: :: The change of the polishing pad ", so it is best to reduce it as much as possible. The gap formed between the "surfaces of the carrier's peripheral ring". However, if the gap is reduced, the size of the feeding port will be reduced, and the area will become smaller, which will limit the supply amount. It is at least one side of the washing liquid, and a part forming a receiving body is provided between the outer periphery of the driver or the inner peripheral edge of the fixing ring, and the other side of the periphery is in the receiving space = In the housing section of 2, the aforementioned elastic body can be provided with the above-mentioned supply port on the part of the lane with this structure. Among the outer peripheral edge and the inner peripheral edge of the fixed ring,

313337.ptd Page 14 523443 V. Description of the invention (9) On the one side, the part opposite to the elastic body forms a receiving part constituting a receiving space. The elastic body is exposed not only in the gap but also in the accommodation space, so the gap formed between the outer peripheral surface of the carrier and the inner peripheral surface of the fixing ring will gradually become smaller, so that the supply port can be ensured in the elastic body. Area. Here, when a polishing liquid is locally supplied between the material to be polished and the polishing pad, the material to be polished is partially polished in this portion. Therefore, the accommodating portion may be provided on the entire periphery of the peripheral portion where the accommodating portion is provided. With this configuration, the polishing liquid supplied into the storage space from the supply port is guided by the storage portion in the circumferential direction of the peripheral edge portion where the storage portion is provided, and flows downward from the entire periphery. Thereby, the polishing liquid is uniformly supplied between the material to be polished and the polishing pad from the entire periphery of the material to be polished, so that the surface to be polished can have a uniform and uniform polishing amount. In addition, when a polishing liquid / cleaning liquid supply mechanism is provided on the polishing head, the cleaning liquid can be completely distributed on the outer peripheral surface formed on the carrier and the inner peripheral surface of the fixing ring by supplying the cleaning liquid to the supply port. The entire range of the gap in the circumferential direction effectively cleans the polishing liquid remaining in the gap. In addition, a wall portion that is erected upward may be provided in the gap between the lower portion of the receiving portion and the peripheral surface on which the peripheral portion of the receiving portion is provided; and to connect the receiving portion and the peripheral surface to the wall portion. The connection path of several parts in the circumferential direction. With this configuration, the polishing liquid or cleaning liquid supplied into the storage space flows along the wall portion to the periphery of the storage space as soon as it is received by the wall portion.

313337.ptd Page 15 523443 5. Description of the invention (10). On the other hand, when the polishing liquid or the cleaning liquid reaches the connection paths provided in the circumferential direction of the wall portion, it passes through the connection path and flows out into the gap formed between the carrier and the fixing ring. In other words, the polishing liquid or cleaning liquid supplied to the storage space flows out of the gap through the connection path in the circumferential direction of the polishing head body, so the polishing liquid or cleaning liquid can be more uniform. Ground is supplied throughout the gap. In addition, the sloping surface is provided below the receiving portion, and the inclined surface is slanted downward in order to face the peripheral surface.

With this configuration, the polishing liquid supplied into the storage space can flow down rapidly along the inclined surface provided below the storage portion toward the aforementioned gap, so it is difficult for the polishing liquid to stay, or the polishing liquid to dry, deteriorate, and solidify. phenomenon. In addition, the second aspect of the present invention is a polishing method. The polishing pad is affixed to the surface of a fixed table, the polishing head and the polishing pad are moved in an opposite direction, and the material to be polished is pressed to perform the polishing. Material grinding. The polishing method is a method of polishing the material to be polished by supplying the polishing liquid to the gap 'between the outer peripheral surface of the carrier and the inner peripheral surface of the retaining ring from the liquid supply path using the polishing head.

When the polishing head configured in this manner performs polishing of the material to be polished, the polishing liquid supplied by the polishing liquid / washing liquid supply mechanism is supplied to the carrier for fixing one side of the material to be polished through the liquid supply path. The outer periphery ® 'and the gap between the inner peripheral surfaces of the fixing ring for retaining the outer periphery of the material to be polished', that is, the gap located on the outer periphery of the material to be polished can be supplied without interfering with the rotation of the fixing table or Grind directly with the retaining ring

313337.ptd Page 16 523443 V. Description of the invention (11) The liquid is supplied between the material to be polished and the polishing pad. Thereby, sufficient polishing liquid can be supplied between the material to be polished and the polishing pad. In addition, the polishing liquid supplied between the abrasive and the grindstone is surrounded by the fixing ring, and even if it receives the centrifugal force caused by the rotation of the polishing head or the fixed table, it does not easily flow out of the periphery of the fixing ring. Use liquids and reduce the use of expensive grinding fluids. Here, in the polishing head, the carrier is heated by the processing heat generated during grinding of the material to be ground. When the carrier is thermally deformed, the deformation will also affect the material to be fixed to the carrier and reduce the grinding. Grinding accuracy of the wood. In the polishing head according to this aspect, the carrier is cooled by the polishing liquid passing through the liquid supply path, so that the thermal deformation of the carrier can be reduced, and the accuracy of grinding of the material to be polished can be improved. In addition, the polishing liquid will gradually dry and deteriorate and accumulate in the gap between the grinding heads. Once such a polishing liquid falls on the grinding pad, it will cause scratches on the surface of the material to be ground. With the polishing head related to the present invention, it is possible to stop supplying the polishing liquid from the polishing liquid / washing liquid supply mechanism to the liquid supply path at a suitable time such as the completion of the polishing operation, and to replace the liquid supply with the cleaning liquid supply. In this way, the polishing liquid remaining in the liquid supply path and the polishing liquid in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixed ring can be cleaned by the cleaning liquid. For the cleaning liquid, for example, pure water or a solvent constituting a polishing liquid may be used. In addition, the third aspect of the present invention is a polishing device, which is attached to the surface of a polishing pad attached to a fixed table, and moves the polishing head and the polishing pad relative to each other, while pressing the material to be polished to perform the polishing. Research

313337.ptd Page 17 523443 V. Description of the invention (12) The grinding device is a device for spraying at least one of a gas and a polishing liquid on the surface of the polishing pad. The polishing apparatus constructed as described above sprays at least one of a gas and a polishing liquid on the surface of the polishing pad by a spraying device. When the spraying device is configured to spray gas, the liquid can be sprayed on the surface of the polishing pad by the spraying device in a state where liquid such as pure water remains on the polishing pad, so as to use the gas to spray the gas on the polishing pad. The liquid is pushed out and removed. In addition, when the spraying device is configured to spray the polishing liquid, the liquid on the polishing pad can be pushed out by the polishing liquid sprayed on the surface of the polishing pad by the spraying device to replace the liquid and the polishing liquid. In addition, when the spraying device is configured to spray both the gas and the polishing liquid on the polishing pad, firstly spray the gas on the surface of the polishing pad to remove the liquid on the polishing pad, and then spray the polishing liquid on the surface of the polishing pad. , And a polishing liquid layer that is not diluted by the liquid is formed on the polishing pad. Here, the spraying device includes a nozzle for discharging a gas or a polishing liquid, and a nozzle moving mechanism for moving the nozzle on the surface of the polishing pad. In this case, the gas or polishing liquid is ejected from the nozzle and sprayed on the surface of the polishing pad while the nozzle mechanism is used to move the nozzle on the surface of the polishing pad, so that the gas or polishing liquid can be repeatedly sprayed on the surface of the polishing pad. Grind on the surface of the ravioli. Here, it is preferable that the gas or the polishing liquid can be sprayed on the surface of the polishing pad, at least for the entire range of the material to be polished.

313337.ptd Page 18 ^^ 3443

The position of the nozzle moving machine 椹 and the center of rotation is * 3: For example, it can be made to rotate the nozzle by facing the polishing pad and moving the nozzle on the outer peripheral side in this direction.时,-面 由 喷 :: Research :! Fix the table and rotate the grindstone. Here again, you can:? The position of the turning center moves toward the outer peripheral side of the radial direction, and the oxygen or polishing liquid is moved from the center of the polishing pad toward the radial & pad surface. Spraying, so that the gas or polishing liquid can be repeatedly sprayed on the polishing. In addition, the nozzle can be connected to a cleaning liquid supply source for supplying the cleaning liquid. As the polishing liquid dries or deteriorates with time and solidifies, when the spraying structure is discharged from the nozzle, the cleaning liquid supply source is connected to the nozzle, and the cleaning liquid The supply source supplies the cleaning liquid to the nozzle, so that the abrasive liquid in the nozzle can be washed by the cleaning liquid to prevent the nozzle from being blocked. The polishing liquid can be supplied to the polishing pad from the nozzle to perform a polishing pad cleaning process. In addition, the polishing device may be used in combination with the polishing head. In addition, a fourth embodiment of the present invention is a method for polishing a material to be polished using the above-mentioned polishing device, which is characterized by spraying gas or polishing liquid on the surface of the polishing pad by the spraying device, and removing the polishing pad. After the liquid, the polishing liquid is supplied to the polishing pad to polish the material to be polished. When the structure of the nozzle coating device is used for spraying gas, it can be used on the surface of the polishing pad by using the spraying device in a state where liquid such as pure water remains on the polishing pad.

523443

Yue, J Shuli V. Description of the invention (14) Spraying gas on the surface, in order to use the gas to punch and remove the body on the polishing pad. When liquid is used, both sides of the liquid can be sprayed on the surface of the polishing pad while the liquid is sprayed on the surface of the polishing pad. The liquid flushed by the polishing liquid to replace the liquid and the polishing liquid. In addition, when the structure of the spraying device is to apply gas and polishing to the polishing pad, firstly spray the gas on the surface of the polishing pad to remove the liquid, and then spray the polishing liquid on the surface of the polishing pad to form an unpolished surface. It is known that the liquid desalination polishing liquid layer. [Best Mode for Carrying Out the Invention] First Embodiment A grinding head according to an embodiment of the present invention will be described below with reference to the drawings. Here, Fig. 1 and Fig. 2 are structural diagrams of the polishing M related to this embodiment, and Fig. 1 is a longitudinal sectional view, and Fig. 2 is a longitudinal sectional view showing the general structure of important parts. The polishing head related to the present embodiment uses ^ _ instead of the polishing head 5 in the conventional polishing apparatus shown in FIG. 15, for example. As shown in FIG. 1, the stomach has a grinding head 11 related to this embodiment, which includes: a head portion composed of a top plate portion 13 and a peripheral wall portion 14 formed in a cylindrical shape; and posted on The diaphragm 1 5 (elastomer) inside the head body 12. Below the elastic body 15 is fixed a disk-shaped carrier 16 on which one side of the wafer W (the material to be polished) is fixed by the lower surface; and a concentric shape is provided on the inner wall of the wall 14 and the carrier 16 Between the outer peripheral surfaces 16a, the polishing pad 4 can be abutted during polishing, and the wafer fixed to the carrier 16 on the inner peripheral surface 17a can be buckled by an annular fixing ring 17 on the outer periphery.

313337.ptd Page 20 523443 V. Description of the invention (15) The carrier 16 and the fixing ring 17 are connected through the diaphragm 15 to allow relative displacement in the vertical direction. The head body 12 is composed of a disc-shaped top plate portion 13 and a cylindrical peripheral wall portion 14 fixed below the outer periphery of the top plate portion 13. A lower end portion of the head body 12 is hollow. The top plate portion 13 is coaxially fixed to a shaft connected to the main body of the polishing apparatus, and the shaft 19 is formed with a first flow hole 20a connected to a pressure adjusting mechanism 30 described below and a polishing liquid / wash The second flow hole 20b connected to the clean liquid supply mechanism 31 is parallel to the axis. In addition, the lower end portion of the peripheral wall portion 14 is formed with a segment portion 14 a over the entire circumference. The carrier 16 made of a highly rigid material such as ceramic is formed into a disc shape with a certain thickness, and the diaphragm 1 5 is sandwiched between the carrier fixing ring 2 1 correspondingly disposed on the diaphragm 15. It is fixed in the state of being placed on the diaphragm 15. The fixing ring 17 is formed in a slightly annular shape as shown in FIG. 1, and is spaced slightly apart from the inner wall of the peripheral wall portion 14 and the outer peripheral surface 16 a of the carrier 16 with a slight gap. These parts are arranged concentrically. Here, the gap formed between the carrier 16 and the fixing ring 17 is indicated by the symbol K (see FIG. 2). In addition, the fixing ring 17 is fixed on the diaphragm 15 by fixing the ring 15 corresponding to the fixing ring 22 provided on the diaphragm 15 in a state where the diaphragm 15 is interposed therebetween. A receiving portion forming a receiving space C is provided on at least one of a peripheral portion of the outer peripheral edge of the carrier 16 and an inner peripheral edge of the fixing ring 17, a portion facing the diaphragm 15, and a peripheral portion of the other side. twenty three. In this embodiment, a cutout is originally provided on the outer periphery of the carrier 16 to form the receiving portion 2 3, and

313337.ptd Page 21 523443 V. Description of the invention (16) The trough part 2 3 ′ is provided along the entire periphery of the outer periphery of the carrier 16. The diaphragm 15 made of an elastic material such as fiber-reinforced rubber is formed into a circular shape or a circular plate shape, and the outer peripheral edge is installed in a section portion formed on the inner wall of the peripheral wall portion 14 a and the diaphragm fixing ring 2 6 installed in the section 14 to be fixed to the head body 12. A fluid chamber 27 is formed between the diaphragm 15 and the head main body 2. The fluid chamber 27 is connected to the pressure adjustment mechanism 30 through a first flow hole 20a formed on the shaft 9a. In addition, inside the fluid chamber 27, the pressure in the fluid chamber 27 is adjusted by supplying a fluid mainly composed of air by the pressure adjustment mechanism 30 through the first flow hole 20a. In addition, the 'diaphragm 15' is provided with a supply port 28 for supplying a polishing liquid into a gap? Formed between the outer peripheral surface of the carrier 16 and the inner peripheral surface of the fixing ring 17. In the present embodiment, the supply port 28 is provided on the diaphragm j5 'at a portion (a portion exposed in the storage space) opposite to the storage space c of the storage portion 23 forming the carrier 16. Thereby, the gap κ can be reduced as much as possible 'and a supply port 28 suitable for the required size in the accommodation space C can be provided. The supply port 28 may be provided only at one place on the diaphragm i 5 or at a plurality of places in the circumferential direction at a portion of the diaphragm 15 facing the accommodation space C. The supply port 28 is formed by a pair of support plates 28a on the diaphragm 15 that sandwich the portion opposite to the accommodation space C from above and below, and provide openings 28b at mutually opposing positions; and The diaphragm 15 is formed with an opening portion 15 a at a portion opposed to the opening portion 2 8 b. The support plate 2 8 a may be formed in a ring shape, for example, and a portion facing the storage space c in the entire periphery of the diaphragm 15 in the circumferential direction, or

313337.ptd Page 22 523443 V. Description of the invention (17) It only surrounds a part of the circumferential direction. Here, the support slab 28a is attached to a portion of the diaphragm cover, and is provided with a space covered by the fixing ring 17 and a space covered by the carrier 16. Alas, at least one of the following can be ensured: 1 7 to ensure the elastically deformable area 4 and be placed on the carrier 16 and the fixed carrier 16 and the fixing ring 1 7 on the diaphragm 15 independently of the head body. A bit. The supply port 28 is connected to the polishing liquid / washing liquid supply. In this embodiment, as shown in FIG. 1, at 徂 97,0,. „Mountain.E, the mouth is not in the opening 'of the fluid chamber 27 in the supply port 28, and the portion to _ is borrowed The first flexible pipe 29 having flexibility is connected to the second flow hole 2 Ob formed in the shaft 19 of the head body 12. The diaphragm 1 5 'is deformed by the first flexible pipe 29. Displacement in the axial direction of the head body 12 is allowed. As described above, the second flow hole 20b is a polishing liquid / cleaning liquid supply mechanism for selectively supplying either one of the polishing liquid and the cleaning liquid. The 31 connection “by this” allows one of the polishing liquid and the cleaning liquid to be selectively supplied to the polishing liquid / washing liquid supply mechanism 31 through the second flow hole 20b and the first flexible pipe 29. Supply port 2 8. As shown in FIG. 1, the polishing liquid / cleaning liquid supply mechanism 31 includes a polishing / night source, a source 3 2 and a cleaning liquid supply source 3 3, and these devices are respectively ground by grinding The liquid / washing liquid supply pipe 34 is connected to the second flow hole 20b. The polishing liquid supplied by the polishing liquid supply source 32 is, for example, S 1 CeO neutral liquid or the use fishing polishing liquid or an acidic polishing solution A 1203 'of abrasive and polishing agents and the like solution used for the wafer w

523443 V. Description of the invention (18) Substances under grinding conditions. The washing is, for example, pure water, or it is constituted. In this embodiment, the first valve 36 is connected to the polishing liquid supply source 33, and the borrower opens and closes either of the other liquids. Here, the first and second valves 36 and 36 are used to switch between the polishing liquid and the cleaning liquid, and the polishing operation by the solid W will be described below. The clean liquid is supplied to the grinding liquid, and the grinding supply source is made by this side, that is, the mechanism for supplying the cut 37. This supply source 3 3 is used as a solvent for the supplied cleaning solution '. The liquid / cleaning liquid supply piping 34 is connected by 32, and the second valve is connected to the first and second valves 36 and 37 to wash / selectively supply the polishing liquid or the cleaning liquid to the polishing liquid. In terms of the mechanism for changing the cleaning liquid supply piping 34, it is not limited to the above-mentioned configuration. It is also possible to use a polishing device generally used for piping and multiple types of polishing pads. When performing this polishing operation, the wafer w A wafer attachment plate (not shown) mounted under, for example, the carrier 16. The wafer w is locked around by the fixing ring 17 so that its surface abuts the polishing pad 4 attached to the upper surface of the fixing table 3. At this time, the lower surface of the fixing ring 7 also abuts the polishing pad 4. In this state, in the initial state, the first and second valves 36, 37 of the polishing / washing liquid supply mechanism 3 丨 are all closed. Then, 'the fluid such as air flows into the fluid chamber 2 7 from the first circulation hole 20 a through the pressure adjusting mechanism 30 to adjust the pressure in the fluid chamber 27, and the carrier 16 and the fixing ring 17 are ground. The pressing pressure of the pad 4. The carrier 丨 6 and the fixing ring 17 are respectively fixed on the diaphragm 15 to form a floating structure that can be displaced in an up and down direction, and the pressure of the polishing pad 4 can be pressed by the pressure adjustment in the fluid chamber 2 7. pressure. On the one side, the carrier 6 and the retaining ring 7 are ground.

313337.ptd Page 24 523443 V. Description of the invention (19) While pressing the pad 4 and rotating the fixed plate 3, the polishing pad 丨 丨 is allowed to rotate. Before and after this, the first valve 36 of the polishing liquid / washing liquid supply mechanism 3 is opened, and the polishing liquid is supplied from the polishing liquid supply source 32 into the polishing liquid / washing liquid supply pipe 34. After that, the first valve 36 is kept open while the wafer w is being polished. The polishing liquid supplied to the polishing liquid / washing liquid supply pipe 34 passes through the second flow hole 20b and the first flexible pipe 29 provided in the shaft 19 of the head body 12 and is supplied to the supply port 28. The polishing liquid supplied to the supply port 28 is supplied into the storage space C of the storage portion 23 forming the carrier 16 and guided by the storage portion 2 3 to the entire periphery of the outer peripheral surface 16 a of the carrier 16, Therefore, the polishing liquid can be supplied along the entire periphery from the entire periphery of the outer peripheral surface 16a to the gap K formed between the outer peripheral surface 16a and the inner peripheral surface 7a of the fixed ring 17. Thereby, the polishing liquid flows down from the gap K and is directly supplied between the wafer_ polishing pad 4 and the wafer w is also polished. Here, in the second figure, the flow direction of the polishing liquid is indicated by an arrow. Then, when the polishing operation is completed and the like, the supply of the polishing liquid to the supply port 28 from the polishing liquid / washing liquid supply mechanism is stopped, and the cleaning liquid is supplied to the supply port 28 instead. The liquid generally allows the cleaning liquid to completely reach the entire circumference of the supply port 28 and the storage portion 23 in the circumferential direction, and cleans the polishing liquid remaining in the storage space C and the gap K. According to this embodiment, it is possible to stop the supply of the polishing liquid from the polishing liquid supply source 32 to the polishing liquid / washing liquid supply pipe 34 by closing the first valve 3 6 ′, or by opening the second valve 37.

523443

The cleaning liquid is supplied from the cleaning liquid supply source 3 3 to the polishing liquid / milk paint, and the cleaning liquid supply pipe 34 for the anti-mu 1 to the Baoqiu a is provided. With the grinding head constructed in this way, the outer peripheral surface 16a of the carrier 16 and the flesh of the fixing ring 7 can be directly opened between the inner surface 17a of the 7%. The gap κ is supplied between W and the polishing pad 4, so that it does not hinder the @rotation or the fixing of the fixing plate 3% 1 7 and a sufficient polishing liquid is supplied between the wafer w and the polishing pad 4. In addition, polishing The liquid is guided to the receiving portion 23 ′ provided on the outer periphery of the carrier 16 and supplied to the entire periphery of the gap K. Therefore, the polishing liquid can be supplied to the wafer from the entire periphery of the wafer W approximately uniformly. Between the polishing pads 4, the overall polishing amount of the crystals 囡 ψ is substantially uniform. In addition, since the polishing liquid supplied between the wafer ^ and the polishing pad 4 surrounds the surrounding surface, it is difficult to flow out even if it receives the centrifugal force generated by the rotation of the polishing head 丨 丨 or the fixed table 3. The outer periphery of the retaining ring 7. Therefore, a small amount of polishing liquid can be used to achieve an effective polishing treatment, and a large amount of expensive polishing liquid can be greatly reduced. In addition, since the polishing liquid can be repeatedly supplied to the surface of the polishing pad 4 by the rotation of the polishing head 11, the polishing liquid can be effectively used for polishing. In addition, since the utilization efficiency of the polishing liquid can be improved and the amount of use thereof can be greatly reduced, the aggregated particles of the polishing liquid will be reduced as a whole, thereby reducing the micro scratches occurring on the surface of the wafer W, and improving the polishing performance of the wafer w . In addition, the burden of the polishing liquid on the polishing pad 4 is also reduced, so that the life of the polishing pad 4 can be extended, and the cost for the polishing pad & can be reduced. Then, when the polishing operation is completed, etc.

313337.ptd Page 26 523443 V. Description of the invention (21) The polishing liquid / cleaning liquid supply mechanism 31 is supplied to the supply port 28, and instead, the cleaning liquid is supplied to the supply port 28. Before the polishing liquid is dried or deteriorated and solidified, the polishing liquid remaining in the supply port 28 and the gap K is washed. In addition, in the above-mentioned embodiment, although the example in which the accommodating portion 23 is provided along the entire periphery of the outer periphery of the carrier 16 has been described, it is not limited to this example, and the accommodating portion may be provided along a part of the circumferential direction of the outer periphery twenty three. In addition, as shown in the longitudinal sectional view of FIG. 3A, the receiving portion 23 may be provided on the outer peripheral edge of the carrier 16 or on the inner peripheral edge of the fixing ring 17 as shown in FIG. 3 As shown in the longitudinal sectional view of B, it is provided on both the carrier 16 and the fixing ring 17. In the latter case, since the storage space C can be enlarged, the area where the supply port 28 can be provided on the diaphragm 15 can be further increased. In addition, in this embodiment, it is explained that the polishing liquid / washing liquid supply mechanism 31 is connected to the supply port 28 to selectively supply the polishing liquid supplied from the polishing liquid supply source 32 or the cleaning liquid. The configuration of the cleaning liquid supplied from the liquid supply source 33 is not limited to this configuration, and the polishing liquid supply source 32 may be connected to only the supply port 28. In addition, in the above embodiment, an example is described in which the supply port 28 is formed by a pair of support plates 28a capable of sandwiching the diaphragm 15 and the opening portion 15a of the diaphragm 15, but the structure is not limited to this. For example, the following The diaphragm is constructed by forming a connection port for connecting the first flexible pipe 29 to the fluid chamber side 27 of the opening 15a of the diaphragm 15 without the support plate 28a, or the first flexible pipe 29 itself. Second embodiment

313337.ptd Page 27 523443 V. Description of the invention (22) The grinding head related to the second embodiment of the present invention will be described below with reference to the drawings. Among the polishing heads related to this embodiment, those which are the same or the same as the polishing head 1 shown in the first embodiment are described using the same reference numerals. The polishing head 41 related to this embodiment is the polishing head 1 shown in the first embodiment. As shown in the longitudinal sectional view of FIG. 4, the polishing head 41 is provided below the storage portion 23 to face the peripheral surface. Inclined surface 2 3 a gradually inclined downward. Here, FIG. 4 is one of the examples, and is used to illustrate the case where the receiving portion 2 3 is provided on the outer periphery of the carrier 16. As shown by the arrow in FIG. 4, the polishing liquid supplied into the storage space C by the polishing head 41 and the supply port 28 flows quickly to the gap along the inclined surface 2 3 a of the storage portion 23. K, therefore, it is difficult for the polishing liquid to stay, and it is also difficult for the polishing liquid to dry, deteriorate or solidify. Third Embodiment A grinding head according to a third embodiment of the present invention will be described below with reference to the drawings. Among the polishing heads related to this embodiment, those which are the same or the same as the polishing head 1 shown in the first embodiment are described using the same reference numerals. The polishing head 4 6 related to this embodiment is the polishing head 1 shown in the first embodiment. As shown in the vertical cross-sectional view of FIG. 5, the storage head 2 3 is provided below the storage section 2 3 and the storage section 2 3 is provided. Between the peripheral surfaces of the peripheral edge portion, that is, between the lower surface of the receiving portion 2 3 and the outer peripheral surface 16 a of the carrier 16, a wall portion 47 standing upright is provided, and in the wall portion 47, along the circumferential direction At several positions, connection paths 48 are provided for connecting the accommodation portion 23 with the outer peripheral surface 16a. Here, FIG. 5 is an example for illustrating the case where the accommodating portion 23 is provided on the outer periphery of the carrier 16.

313337.ptd Page 28 523443 V. Description of the invention (23) According to this structure, the polishing liquid supplied into the storage space C will be received by the wall portion 47 and flow along the storage portion 23 in the circumferential direction. When the grinding fluid reaches the connection path 48 provided in the wall portion 47, a part of the grinding fluid flows out through the connection path 48 to form the gap κ between the carrier 16 and the fixing ring 17. That is, "the polishing liquid is surely guided to the entire circumference in the circumferential direction by the storage portion 23 and the wall portion 47, and flows out into the gap K through the connection path 48 in various places in the circumferential direction," thereby making the polishing liquid The average supply can be performed along the entire circumference of the gap κ. ', F Here, if the supply port 28 is also connected to the cleaning liquid supply source 33,' Once the cleaning liquid is supplied into the storage space ^, the cleaning liquid will also be guided to the circumferential direction exactly like the polishing liquid. Throughout the entire circumference, and flowing out into the gap K at all places in the circumferential direction of the carrier 6 to clean the whole inside the gap κ. In the polishing pad 46, in order to allow the connection path 48 to supply the polishing liquid or the cleaning liquid evenly along the perimeter of the gap κ, for example, a space may be provided in the direction of the carrier 6. & In addition, the 'connection path 4 8 can be made into any shape, for example, as shown in Fig. 6a generally' can be made into a semi-circular cross-section, if shown in Fig. 6 B and _ c, the cross-section has a square or quadrangle Etc., or the section is polygonal. In addition, as shown by a double dashed line in FIG. 5, an inclined surface 23a may be provided below the housing portion 23, which gradually slopes downward along the peripheral surface. In the above-mentioned embodiment, the case where the housing = 23 is provided on the outer periphery of the carrier 6 is described, but it is not limited to such a configuration, and is on the inner periphery of the fixed ring i 7. In the case where there is a storage portion 23, a wall portion 47 having a connection path 48 can be provided in the storage portion 23 as well.

523443 5. Description of the Invention (24) Fourth Embodiment The grinding head related to the fourth embodiment of the present invention will be described below with reference to the drawings. Among the polishing heads related to this embodiment, those which are the same or the same as the polishing head 1 shown in the first embodiment are described using the same reference numerals. Fig. 7 'is a vertical cross-sectional view showing the configuration of the polishing head 5 丨 according to this embodiment. The polishing head 5 related to this embodiment is at least one of the carrier 16 and the fixing ring 丨 7 in the polishing head 1 shown in the first embodiment, and is provided to supply at least one of the polishing liquid and the cleaning liquid. The flow path 5 2 to the gap K is structurally connected to at least one of the polishing liquid supply source 32 and the cleaning liquid supply source 3 3. In Fig. 7, an example in which a first flow path (flow path A) 5 2a 'is provided in the carrier 6 or a second flow path (flow path magic) in the fixed ring 17 is illustrated. 3 The grinding head 51 is attached to The carrier 16 is provided with a first flow path 52a that can pass from the upper surface 16b to the outer peripheral surface 16a, and the first flow path 52a is connected to the upper surface 16b by a second flexible pipe 53 having at least a part of which is elastic. The open end on the side is connected to the second flow hole 2 Ob of the head main body 12. In addition, in the head main body 12, a mounting portion to which the polishing wave / cleaning liquid supply pipe 34 is connected is provided on the top plate portion 13 54, and the top plate portion 13 and the peripheral wall portion i 4 are provided with a head main pipe 56 that can pass from the attachment portion 54 to the inner peripheral surface of the segment portion 1 4 a of the peripheral wall surface 14. In addition, the fixing ring 1 In 7, a first flow path 52b that passes from the upper surface 17b to the inner peripheral surface 17a is provided, and in the second flow path 52b, at least a part of the third flexible pipe 57 is elastic, and

523443 V. Description of the invention (25) The open end on the 1 b side of the upper part is connected to the main body pipe 5 6. With this configuration, not only the supply port 28 provided in the diaphragm 5 but also the flow path 5 2 provided in the carrier 16 and the fixing ring 7 can be used to supply the polishing liquid or the cleaning liquid to the gap K. The inside 'therefore ensures the flow rate of the polishing liquid or the cleaning liquid and maintains the polishing performance. In addition, the connection form with the flow path 52, the polishing liquid supply source 32, and the cleaning liquid supply source 33 shown in the above embodiment is one example, and any other form may be adopted. ^ Fifth Embodiment Hereinafter, a polishing head according to a fifth embodiment of the present invention will be described with reference to the drawings. Here, FIG. 8 is a longitudinal sectional view of the structure f of the polishing head related to this embodiment. FIG. 9 is a front end view of the polishing head related to this embodiment, and FIG. 10 is a schematic view showing this embodiment. The enlarged view of the important part of the polishing head. The polishing head related to this embodiment may be replaced with the polishing head 5 in the conventional polishing device shown in FIG. 15, for example, as shown in FIG. 8. There are: a head body 12 formed by a top plate portion 13 and a cylindrical peripheral wall portion 4; a diaphragm 15 attached to the inside of the head body 12; fixed under the diaphragm 15 = good and by Next, the wafer w (the material to be polished) 2 and the inner surface of the peripheral wall 14 and the surface of the carrier 16 are formed concentrically, and can be abutted against the polishing pad 4 during polishing, and A ring-shaped fixing ring that is fastened to the outer periphery of the wafer boundary fixed to the carrier 16 on the inner peripheral surface

313337.ptd Page 31 523443 V. Description of the invention (26) The head body 12 is composed of a circular plate-shaped top plate portion 13 and a cylindrical peripheral wall portion 14 fixed below the outer periphery of the top plate portion 13. The lower end of the head body 丨 2 is hollow. The top plate portion 13 is fixed coaxially with the shaft 19 connected to the main body of the polishing device. Above the shaft 19, there is a first flow hole 20a communicating with the pressure regulating mechanism 30 and a polishing liquid / washing communication. The first flow holes 2 0 b of the liquid supply mechanism 31 are formed in a staggered direction. In addition, the top plate portion 1 3 is provided with an attachment portion 54 to be connected to the polishing liquid / washing liquid supply mechanism 3 丨. From this attachment portion 52, a head main pipe 56 which can be passed to the lower surface of the top plate portion 3 is formed. In addition, at the lower end portion of the peripheral wall portion 14, a segment portion 14a formed along the entire circumference is formed from an elastic material such as fiber-reinforced rubber, and the system is formed into a ring shape or a disc shape. The outer peripheral edge is sandwiched between the segment portion 14a formed on the inner wall of the peripheral wall portion 丄 4 and the diaphragm fixing ring provided in the segment portion 14a, and is fixed to the head body 12. A fluid chamber 27 is formed above the diaphragm 15 and the fluid chamber 27 is in communication with the pressure regulating mechanism 30 through a first flow hole 20a formed in the shaft 19. The inside of the fluid chamber 27 is supplied with air as the main fluid by the pressure adjustment mechanism 30 through the first circulation hole 20a, thereby adjusting the pressure inside the fluid chamber 27. The carrier 16 made of a highly rigid material such as ceramic is formed into a disc shape with a certain thickness, and is fixed to the carrier fixing ring 21 provided on the diaphragm 15 with the diaphragm 15 interposed therebetween. To be mounted on the diaphragm 15. The first flow path 62 is provided with a vertical portion 62a formed along the axis of the carrier 16 from the center of the upper surface 16b of the carrier 16 to the vicinity of the lower surface;

313337.ptd page 32 523443 V. Description of the invention (27) The lower end of the straight portion 6 2 a is a horizontal portion 62 b which is arranged slightly radially along the lower surface of the carrier 16 toward the outer peripheral side. In this embodiment, as shown in FIG. 9, a total of four horizontal portions 62 b are formed in the circumferential direction of the carrier 16 at a substantially equal angular interval. As shown in FIG. 8, in the first flow path β 2, the upper surface The open end on the side of 16 b is connected to the second flow hole 20 b formed in the shaft 19 of the head body 12 via at least a part of the first flexible pipe 5 3 having flexibility. Here, the carrier 16 'is allowed to be displaced in the axial direction of the head caused by the deformation of the diaphragm 5 by the deformation of the first flexible pipe 53. 7 In addition to 7 points, the second flow hole 2 0b is connected to the polishing liquid / cleaning liquid supply mechanism 3 1 which selects either of the polishing liquid ^ cleaning liquid, and this first flow path 6 2 can be By the second flow hole 200b and the first flex = Si'53, the polishing liquid / washing liquid supply mechanism 31 is selectively supplied to either hand. In addition, the diameter of the above-mentioned first flow path 62 is more easily blocked than that of the small Nisori polishing liquid, and the carrier = strength, so it is greater than 2mm and less than 10mv = lower to guide the outer peripheral surface 16a of the carrier 16 and —The flow path 62 is connected, and the first groove of the polishing liquid or the cleaning liquid supplied by (ΙΛ4Λ62) is formed along the entire circumference. The first groove 6 4 / As shown in Fig. 10, Juno Shi and others The inner surface of the side 6 4 a, mm μ is formed into a downwardly sinking shape, so that the flute: the abrasive or washing liquid to the -ditch 64 can temporarily accompany the younger brother-flow path = -ditch 64. In Therefore, ::: is preserved, and the state of the polishing liquid 8 is preserved along the groove 64. The text is taken as an example, and the first ——% 17 is shown, as shown in FIG.

313337.ptd Page 33 523443 V. Description of the invention (28) There is a small gap between the inner wall of the crotch 14 and the outer peripheral surface 16a of the carrier 16, which is concentric with the devices. Here, the gap formed between the carrier 16 and the fixing ring 17 is indicated by the symbol K. (Refer to Figure 9 and Figure 10). The fixing ring 1 7 'is fixed to the fixing ring 22 mounted on the diaphragm 15 in a state where the diaphragm 5 is interposed therebetween, and is thereby fixed on the diaphragm 15 by this. Here, the fixing ring 22 and the diaphragm 15 are located at positions opposite to the open end of the second flow path (flow path B) 65, which will be described later, and form a one-way piping 5 7 (described later) for insertion.的 通 孔 η。 The through hole η. In addition, in the fixing ring 17, a plurality of second flow paths 65 are formed at a plurality of positions along the circumferential direction for supplying a polishing liquid or a cleaning liquid to the inner peripheral surface 17 a. The flow path of the gap κ from the outer peripheral surface of the carrier 16. The second flow path 65 passes from the upper surface 17b of the fixed ring 17 to the inner peripheral surface 17a. In this embodiment, as shown in Fig. 9, a total of four second flow paths 65 are formed in the circumferential direction of the fixed ring 17 at equal angular intervals. In addition, the fixing ring 22 is inserted into the insertion hole Η of the f diaphragm 15 with a partially flexible second torsion f 5 7. In the first flow path 6 5, the upper side 1 7 b side The open end is connected to the head body = path 56 formed on the top plate portion 3 of the head body 2 through the third flexible pipe 57. Here, the fixing ring 17 allows displacement of the head axis direction due to the deformation of the diaphragm 5 by the deformation of the second flexible pipe U '. In addition, the second flexible piping is connected to the polishing liquid / washing liquid supply M through the head main pipe 5 6 formed at the top plate portion 13 of the head 12 at the other end, whereby the second flow path 6 5. The polishing liquid / washing liquid supply mechanism 31 can selectively supply either one of the polishing liquid and the cleaning liquid through the head body pipe 5 6 and the second pull pipe 57.

523443 V. Description of Invention (29)

In addition, the diameter of the above-mentioned second flow path 65 is more likely to be blocked when it is grinded when it is 2mm, and it will reduce the strength of the carrier when it is wider than 10mm. In addition, the inner peripheral surface i7a of the fixing ring 17 is connected to the second flow path 65, and a groove (groove B) 6 8 is used to guide the abrasive or cleaning liquid supplied from the second flow path 65. Formed all week. As shown in FIG. 10, the inner surface 68a on the lower side of the second groove 6 8 is formed into a downwardly recessed shape, whereby the polishing liquid or cleaning liquid supplied from the first loop 6 65 to the second groove 6 8 is formed. Can be temporarily stored, or 苐 二 沟 6 8 流。 ~ As shown in FIG. 8, the polishing liquid / washing liquid supply mechanism 3 丨 includes: a polishing liquid supply source 32 and a cleaning liquid supply source 3 3, and these devices respectively use a polishing liquid / washing liquid The supply pipe 34 is connected to the second flow hole 20b and the attachment portion 5 &. • The polishing liquid supplied by the polishing liquid supply source 32 is, for example, an alkaline polishing liquid using SiO2 or a neutral polishing liquid using Ce02, or an acidic polishing liquid using a 込 l, or A polishing solution such as an abrasive is a substance suitable for the wafer w polishing conditions. The cleaning liquid 'supplied from the cleaning liquid supply pipe 34 is, for example, pure water or a solvent constituting a polishing liquid. 々 In this embodiment, the polishing liquid / washing liquid supply pipe 34 is connected by the first valve 36 to the polishing liquid supply source 32, and the second valve 37 is connected to the cleaning liquid supply source 33, and By opening one of the first and second valves 36 and 37, and closing the other side, either one of the polishing liquid or the cleaning liquid can be selectively supplied. Here, it is not limited to the above as a mechanism for switching the supply of polishing liquid or cleaning liquid to the polishing liquid / washing liquid supply pipe 34.

523443 V. Description of the invention (30) The mechanism using the first and second valves 36, 37 can also be any mechanism commonly used for piping connection switching. When the wafer W is polished by the polishing apparatus using this type of polishing head 61, first, the wafer W is attached to, for example, a wafer W attachment plate (not shown) provided under the carrier 16. The wafer W is locked around by the fixing ring 17 so that its surface can abut the polishing pad 4 attached to the fixing table 3. At this time, the lower surface of the fixing ring 17 also comes into contact with the polishing pad 4. In this initial state, the first and second valves 36, 37 of the polishing / washing liquid supply mechanism 31 are all closed. By allowing a fluid such as air to flow from the first circulation hole 20a to the chamber 27, the grinding pair is fixed at 17 pairs, and the pressure can be maintained at 36 by flowing the pressing force here, while the supply pipe 36 is kept open and supplied to It is provided in the head pipe 56 to regulate the pressure in the fluid chamber 27 and adjust the pressing pressure of the carrier 1 β and the fixing ring pad 4. The carrier 16 and the fixing ring 17 form a floating structure on the diaphragm 15 that can be displaced in the vertical direction. The pressure inside the body 27 adjusts the pressing pressure on the polishing pad 4. On one side, while adjusting the pressing force of the carrier 16 and the fixing ring I on the polishing pad 4 to rotate the fixed plate 3, the polishing pad n is allowed to rotate. At the same time, the first valve of the polishing liquid / washing liquid supply mechanism 3 is opened, and the polishing liquid supply source 32 supplies the polishing liquid into the polishing liquid / washing liquid 34. After that, the first time when the wafer w is polished

On state. J The polishing liquid supplied to the polishing liquid / washing liquid supply pipe 34 passes through the attachment portion of the top plate portion 13 of the main body 12 through the second flow hole 20b in the shaft 19 of the head body 2 54 supply to the head body

523443 V. Description of the invention (31) In addition, the polishing liquid supplied to the second flow hole 200b passes through the first flexible pipe 53 and is supplied to the first flow path 62 of the carrier 6b. The polishing liquid guided to the outer peripheral surface 16 a through the first flow path 62 is introduced to the entire periphery of the outer peripheral surface i6a through the first groove 64 formed in the outer peripheral surface 16a, and is guided from the outer peripheral surface 1 6 The entire periphery of a flows down, so that the polishing liquid can be supplied into the gap formed between the outer peripheral surface 16 a and the inner peripheral surface 17 a of the fixed ring 17, that is, to the gap located at the outer periphery of the wafer. All week.

In addition, as described above, the polishing liquid is supplied into the ground flow path 62, and the polishing liquid flowing in the first flow path 62 can be used to cool the carrier 16. In this embodiment, the horizontal portion 62b of the first flow path 62 is formed near the lower surface of the carrier 16 and is formed to be slightly radial from the center of the carrier 6 to the outer peripheral side. Therefore, the carrier 16 can withstand processing heat. The entire vicinity of the lower surface is subjected to a cooling liquid cooling treatment. Here, in order to take into consideration the effective cooling of the carrier 6, it is possible to provide as many horizontal portions 62b as possible within a range that does not reduce the strength of the carrier 16, and it is better to set it near the lower side. In addition, since the polishing liquid supplied to the horizontal portion 62b is sent out of the outer peripheral surface 1 6 a 'by the centrifugal force generated by the rotation of the grinding head 61, the outer peripheral surface 1 β a can be smoothly polished. liquid.

On the other hand, the polishing liquid supplied into the head main body pipe 56 passes through the second flexible pipe 57 and is supplied into the second flow path 6 5 of the fixed ring 17. Since the polishing liquid introduced to the inner peripheral surface 17 a by the second flow path 65 is guided to the entire periphery of the inner peripheral surface 17a by the second groove 68 formed in the inner peripheral surface 17a, Since the entire surface 17a flows down, the polishing liquid can be supplied to the gap K formed in the inner peripheral surface 17a and the outer peripheral surface 16a of the carrier 16.

523443 V. Description of Invention (32) Whole week. By supplying the polishing liquid into the gap K in this manner, the polishing liquid can be directly supplied between the wafer W and the polishing pad 4 without hindering the rotation of the fixing table 3 or the fixing ring 17. Then, when the polishing operation is completed and the like, the supply of the polishing liquid to the first and second flow paths 6 2 and 6 5 from the polishing liquid / washing liquid supply mechanism 31 is stopped at an appropriate timing. To the first and second flow paths β 2, 6 5 so that the cleaning liquid is completely distributed in the first and second flow paths 62 and 65 and the entire circumference of the gap K in the same manner as the polishing liquid, and the The polishing liquid remaining in the first and second flow paths 62, 65, and the gap κ is washed. In this embodiment, the first valve 36 can be closed to terminate the supply of polishing liquid from the polishing liquid supply source 3 2 to the polishing liquid / washing liquid supply pipe 34, or the second valve 37 can be opened to clean the cleaning liquid. The liquid is supplied from the washing liquid supply source 33 to the polishing liquid / washing liquid supply pipe 34. With the polishing head 61 configured in this way, the polishing liquid can be supplied to the gap K formed between the outer peripheral surface 16 a of the carrier 16 and the inner surface 17 & In the case of the rotating or fixed ring 3, it is directly supplied between the wafer ψ and the polishing 塾 4. As a result, sufficient polishing liquid can be supplied to the wafer S and the polishing chamber 0. The polishing liquid is formed on the outer peripheral surface 16a of the carrier 16 and is formed on the inner peripheral surface 17a of the fixing ring 17. The second groove 68 is guided to the king Zhou in p Gongyue and r 1 K. Therefore, the polishing liquid can be kept secret from the entire periphery of the wafer. On the outer circumference of the day HI, you can say that PI w eight A Μ 4 is also between, Japanese, Japanese Yen W and the polishing pad 4, and can make the polishing amount of the king surface 51 W per day approximately equal.

313337.ptd Page 38 523443 V. Description of the invention (33) In addition, the polishing liquid supplied between the wafer W and the polishing pad 4 is surrounded by the fixing ring 17 even if it is subjected to the polishing head 6 1 or The centrifugal force generated by the rotation of the fixing table 3 also does not easily flow out of the outer periphery of the fixing ring 17. Therefore, it is possible to achieve an effective polishing treatment with a minimum amount of polishing liquid used, and to reduce the amount of expensive polishing liquid used. In addition, the polishing liquid can be repeatedly supplied to the surface of the polishing pad 4 by the rotation of the polishing head 61 itself, so that the polishing liquid can be effectively used for polishing processing. In addition, by supplying the polishing liquid to the ground path 62, the carrier 16 can be cooled by the polishing liquid flowing in the first flow path 62, so that the deformation of the carrier 16 can be reduced, and the wafer w can be improved. Grinding accuracy. In addition, since the horizontal portion 62b of the first flow path 62 is formed slightly radially from the center of the carrier 16 to the outer peripheral side, the carrier can be effectively cooled by the polishing liquid along the vicinity of the lower surface that receives the processing heat, thereby effectively Suppresses thermal deformation of the carrier 1 /. During wafer polishing, the polishing liquid is smoothly supplied to the outer peripheral surface I6a of the carrier 16 by the centrifugal force generated by the rotation of the polishing head 61. Then, when the polishing operation is completed and the like, the supply of the polishing liquid to the first and second flow paths 62, 65 by the polishing liquid / washing liquid supply mechanism 31 is stopped, and the cleaning liquid is supplied to the first First, the second flow path β 26 5 is used to wash the polishing liquid remaining in the first and second flow paths 62 ′ 65 and the gap [] before the polishing liquid is dried or deteriorated. In addition, the above embodiment illustrates the following example: the head main body 12 is formed on the top plate part 13 to communicate with the fluid chambers 2 7 and 5,

523443

It is assumed that the connection portion 54 provided on the top plate portion 13 and the rigid flow path 65 are fixed, and the head body pipe is connected to the head main pipe by the first 57th of the Γ7th disposed in the fluid chamber 27.路 56 与 第二流 路 65。 Road 56 and the second flow path 65. However, in this example of f-type piping, for example, the grinding head 7 1 shown in FIG. 11 can be used. The generation is not limited to the head main pipe 5 6 provided in the main body 12, and can be formed by the hall to The head attachment portion 54 communicates with the head body of the inner peripheral surface of the segment portion 14 a of the peripheral wall portion 14 and its path 7 2, and the second flow path 65 can be opened at the end of Guhonglu 17b. The opening is opened on the outer peripheral surface 17c, and the open end is connected to the open end on the side of the section 14a of the head main pipe 72 by a second flexible pipe 57. Sixth Embodiment A polishing apparatus according to a sixth embodiment of the present invention will be described below with reference to the drawings. Here, Fig. 12 is a perspective view showing the configuration of the polishing apparatus according to this embodiment. In the polishing apparatus related to this embodiment, the same or same parts as those of the conventional polishing apparatus shown in FIG. 5 are denoted by the same reference numerals. As shown in FIG. 12, the polishing apparatus related to this embodiment, J, is provided with a polishing pad 4 on a fixed table 3 installed on the central axis, and is opposed to the polishing pad 4 and deviated from the center of the fixed table 3. At the position of the shaft, a grinding head that is rotationally driven by a head driving mechanism (not shown) is provided. In addition, the surface of f grinding 塾 4 is provided with a spraying device 丨 2 for spraying a gas or a polishing liquid. The spraying apparatus 112 'includes a nozzle 1 13 that discharges a gas or a polishing liquid, and a nozzle moving mechanism 1 1 4 that moves the nozzle 11 to the surface of the polishing pad 4 while facing the polishing pad 4. The nozzles 13 and the nozzle moving mechanism 1 1 4 can be provided in a plurality of groups.

313337.ptd Page 40 523443

The nozzle 11 3 passes through the first pipe π 7 and the gas supply source 1 1. The gas supply source 1 1 6 is used to supply, for example, clean yβ inert gas, etc., and the polishing pad 4 will not be polluted or deteriorated == gas. Or, a first valve 1 1 8 is provided in the first piping 1 1 7 to switch on and off the gas. I 1 8 can control the supply or stop of gas supply to the nozzle 11 3. The ^, II 8, besides the structure of the manual switch, can also be made ^ a valve control device to control the structure of the switch. There is no nozzle moving mechanism 1 1 4 on the stomach, which is used to move the nozzle 11 3 on the surface of the polishing pad 4 5 small β in the area where the material to be polished is grounded. It can also be used for moving parts. Any kind of construction. In this embodiment, the nozzle moving mechanism 1 1 4 includes: a support shaft 121 provided on the side of the fixed base 3; an arm portion 122 whose end 122a is supported by the support vehicle 121; and a support shaft 121 along the support shaft 121. A driving device (not shown) that rotates around the axis. A nozzle 1 1 3 is provided in the other end 1 22b of the arm portion 1 22, and the rotating shaft 121 can be rotated by a driving device, and the support shaft 121 can be used as a fulcrum and can rotate on the plane of the surface of the grinding pad 4, The nozzle 112 provided at the other end 122 b is moved on the plane of the surface of the polishing pad 4. Here, the arm portion 122 can move the other end 122b from a position opposite to the rotation center C of the polishing pad 4 to the outer peripheral side in the radial direction facing the polishing pad 4, at least facing the polishing used on the material to be polished. The radial outermost position of the area. Next, research was conducted on the grinding apparatus 1 1 1 configured in this manner.

313337.ptd Page 41 523443 V. Description of the invention (36) '------ F-mill grinding procedure will be explained. The polishing device 111 is characterized by performing the first polishing process after the dressing of the polishing pad 4 or the polishing process performed after the previous polishing process $. In this embodiment, pure water pw is used as a liquid for supplying the polishing pad 4 during trimming and cleaning and polishing. In the polishing procedure ', in the initial state, the nozzles 11 3 are set at positions facing the rotation center c of the polishing pad 4. And in this state, by spraying the gas from the nozzles i3 to the surface of the grinding pad 4, the rotation center c of the polishing pad 4 allows pure water P W to flow to the surroundings by the sprayed gas. After that, the fixed table 3 is driven to rotate the grinding wheel 4 as follows. In this manner, in a state where the polishing pad 4 is rotated, the nozzle 113 is moved toward the outer circumferential side of the polishing pad 4 in the radial direction by the nozzle moving mechanism Π4, whereby the gas can be sprayed from the rotation center C of the polishing pad 4 to The outer peripheral side of the radial direction, and the pure water pw can also flow to the outer peripheral side of the radial direction from the rotation center c of the polishing pad 4 without leaking. Here, the distance between the nozzle 1 1 3 and the outer circumferential side of the polishing pad 4 in the radial direction by the nozzle moving mechanism 11 4 during the rotation of the polishing pad 4 is controlled so that pure water p W flows through the polishing pad. The area D1 on the surface of 4 and the area where the pure water PW flows again by the gas θ2 are continuously in the radial direction, so that the pure water PW can be pushed onto the polishing pad 4 without any leakage. In addition, the 'spraying device 1 12' is applied to the surface of the polishing pad 4 and sprays the gas from the rotation center C to at least the radial outermost position of the area used for polishing the material to be polished. Then, as described above, on the surface of the polishing pad 4, pure water is removed from at least an area used for polishing the material to be polished, and the conventional

313337.ptd Page 42 523443 V. Description of the invention (37) " Polishing device 1 Similarly, the polishing liquid is supplied to the surface of the polishing pad 4 while a new material to be polished is polished. With the polishing device constructed in this way, i can use a spraying device] 2 to spray the gas on the surface of the polishing pad 4, so that it can remain on the polishing pad after trimming or after the previous polishing procedure. "Pure water on 4" is removed, even if the polishing liquid is supplied on the polishing pad 4, the polishing liquid will not be diluted by pure water pw. Therefore, in the grinding process of regrinding the material to be polished, the traditional The pure water PW is removed from the polishing pad 4 and the polishing liquid 'supplied to the polishing pad 4 while maintaining the polishing performance, greatly reduces the consumption of the polishing liquid to 3 to 50 mL / inin, or ideally 7 to 20 mL / min (compared with conventional polishing about 3% to 50%). In addition, 'Si wafers with a Si Ge layer on the surface have strict specifications for surface roughness' and require higher flatness, so this application The invention is particularly effective for the polishing of such a wafer, and at the same time, the polishing pressure can be controlled from 0 to 50 kPa or ideally from 13 to 40 kPa. In this embodiment, the nozzle 1 1 3 is formed to face the polishing nozzle 4 Surface, but the nozzle 113 can also be set by grinding The surface of the pad 4 is inclined toward the outer peripheral side in the radial direction. At this time, since the gas system is discharged from the nozzle Π 3 to the outer peripheral side of the grinding 塾 4, the pure water PW on the grinding 塾 4 can be effectively pushed toward the grinding 塾The outer peripheral side in the radial direction of 4. In addition, in the above-mentioned embodiment, the spraying device 1 1 2 is made by connecting the gas supply source 1 1 6 to the nozzle 1 1 3 and spraying the gas onto the polishing pad 4 Structure, but it is not limited to this structure, instead of a gas supply source, a polishing liquid supply source for supplying a polishing liquid may be quickly connected to the nozzle 1 1 3, and

523443

V. Description of the invention (38) The nozzle 1 1 3 sprays the abrasive liquid on the grinding pad 4. In this case, the polishing liquid is sprayed on the surface of the polishing pad 4 by the spraying device i 2 and the pure water PW on the polishing pad 4 is pressed by the polishing liquid sprayed on the surface of the polishing pad 4 to replace it. "Pure water" and polishing liquid. Therefore, compared to the traditional method of supplying pure polishing liquid to polishing pad 4 and using the flow of the polishing liquid to push pure water PW from polishing pad 4, it is more effective to purify pure water. Water PW is introduced to reduce the amount of polishing liquid used for the replacement of pure water PW and polishing liquid. In addition, in the above-mentioned embodiment, the nozzle moving mechanism 丨 4 is formed to move the nozzle Π 3 to the polishing pad 4 diameter. The structure moving in the direction is not limited to this structure. The structure of the nozzle moving mechanism 4 can also be made to move the nozzle 113 to the surface of the polishing pad 4 at least for the entire area of the material being polished. This At this time, when the polishing pad 4 is at a standstill, the nozzle 113 is moved on the surface of the polishing pad 4 at least on the aforementioned area by the nozzle moving mechanism 114 while exhaling the gas or polishing liquid from the Heming 113, so as to purify the area. Removal or grinding of water p W Spraying of liquid. Seventh Embodiment Hereinafter, a polishing apparatus according to a seventh embodiment of the present invention will be described with reference to the drawings. Here, FIG. 13 is a longitudinal sectional view showing the configuration of the polishing apparatus according to this embodiment. In the polishing device related to this embodiment, the same or the same parts as the polishing device 1 1 1 shown in the sixth embodiment are denoted by the same symbols. ~ As shown in Fig. 13 M and this The polishing device 1 1 3 according to the embodiment, and the polishing device 1 1 1 shown in the sixth embodiment, is not only connected to the nozzle π 3

313337.ptd Page 44 523443 V. Description of the invention (39) The gas supply source 1 1 6 is also connected to the polishing liquid supply source 1 3 2. The polishing liquid supply source 1 3 2 is connected to the nozzle Π 3 through the second pipe 1 3 3. The second pipe 1 3 is provided with a second valve 1 3 4. The second valve 1 3 4 ′ can be opened or closed to control or stop the supply of the polishing liquid to the nozzle 1 1 3. In this embodiment, the nozzle main body 1 1 3 a of the nozzle 1 1 3 is provided with a first flow path 1 13c and a third flow path 1 1 3 c for connecting the first pipe 1 1 7 and the discharge port 1 13b. Connect the second flow path 丨 3 d communicating with the second pipe 1 3 3. The nozzle 1 1 3 ′ supplies the gas from the first pipe 1 1 7 to the first flow path 1 1 3 c ′ and uses the liquid flow effect to suck it out from the second pipe 1 μ to the second flow path 1 1 3 d. The polishing liquid is discharged from the discharge port 1 1 3 b. That is, by supplying gas from the gas supply source π 6 to the nozzle 1 1 3, the nozzle 1 1 3 can only emit gas, and by continuously supplying gas to the nozzle} 3 and supplying the liquid from the polishing liquid source 1 32 By supplying the polishing liquid, the polishing liquid can be discharged from the nozzle 1 1 3. With this configuration, the polishing liquid supplied from the polishing liquid supply source 132 to the second pipe 133 does not come into contact with the gas, and the polishing liquid in the second pipe 1 3 3 is not dried and solidified. In addition, the nozzle 1 1 3 is connected to the third pipe! 37 is connected to a cleaning liquid supply source 1 3 6 for supplying a cleaning liquid such as pure water. The third pipe 1 3 7 is provided with a third valve 1 3 8. By opening or closing the third valve 1 3 8, the supply of the cleaning liquid to the nozzle 1 1 3 can be controlled or the supply of the cleaning liquid can be stopped. Here, the second and third valves 1 3 4 and 1 3 8 are controlled by a control device (not shown) in addition to the structure of manually opening and closing. 0

313337.ptd Page 45 523443 V. Description of the invention (40) In this embodiment, the third pipe 1 3 7 is connected to the position near the connection portion of the second pipe 1 3 3 and the nozzle Π 3, and borrows The second pipe 1 3 3 is connected to the nozzle 1 1 3. Thereby, the cleaning liquid can be supplied from the cleaning liquid supply source 1 3 6 to the second flow path 113d of the nozzle u 3 through the third pipe 1 3 7 and the second pipe 1 3 3 or through the first flow path. 113c is discharged from the discharge port 113b. Hereinafter, the grinding process of the material to be ground performed by the grinding device 1 31 constructed in this way will be described. This polishing device 1 3 1 is the same as the polishing device 1 i i shown in the sixth embodiment, and is characterized in that it is the first polishing procedure after trimming or the polishing procedure processed after the previous polishing procedure. This polishing procedure is firstly the same as the polishing procedure performed by the polishing device 11 1. After the pure water PW on the polishing pad 4 is removed by gas by 0, the nozzle 11 is moved again by the nozzle moving mechanism 11 4. 3 is moved to a position opposite to the rotation center c of the polishing pad 4 (or the innermost peripheral position in the radial direction of the region on the polishing pad 4 used for polishing the material to be polished). Then, in this state, the polishing liquid is sprayed onto the surface of the polishing pad 4 from the nozzle π 3, and the nozzle 11 3 is moved by the nozzle moving mechanism 1 1 4 while the polishing pad 4 is driven to rotate the fixed table 3. The polishing pad 4 moves on the outer peripheral side in the radial direction. Thereby, the polishing liquid can be sprayed in a swirl shape from the rotation center C (or the inner circumferential side of the radial direction) of the polishing pad 4 to the outer circumferential side of the radial direction. Here, while the polishing pad 4 is rotating, the nozzle moving mechanism 114 moves the nozzles 1 丨 3 to the distance from the outer peripheral side of the polishing pad 4 in the radial direction.

313337.ptd Page 46 523443 V. Description of the invention (41) The separation is controlled in the area where the abrasive liquid flows through the surface of the polishing pad 4 and the area where the abrasive liquid is sprayed again in a radial direction. This can repeatedly spray the polishing liquid on the polishing pad 4. In this way, at the appropriate time to complete the polishing liquid spraying process, the nozzle 1 1 3 is removed from the polishing pad 4 by the nozzle moving mechanism 1 1 4, and the cleaning liquid is supplied from the cleaning liquid supply source 1 3 in this state. 6 is supplied into the nozzle 1 1 3, and the polishing liquid in the nozzle 1 1 3 is washed with a washing liquid to be reserved for next use. By cleaning the inside of the nozzle 1 1 3 by 9, the clogging of the polishing liquid in the nozzle 3 can be prevented. The polishing device 1 3 1 configured in this manner is a spray device 1 1 2 that selectively sprays either one of a gas and a polishing liquid on the polishing pad 4, and first sprays a gas on the polishing pad 4 to spray the polishing pad. After the pure water Pw on 4 is removed, the polishing liquid is sprayed on the polishing pad 4, and as shown in FIG. 13, a polishing liquid layer p not diluted by pure water PW can be formed on the polishing pad 4. Since the polishing device 1 3 1 directly forms the polishing liquid layer p on the polishing pad 4 by spraying the polishing liquid on the polishing pad 4, it is more convenient to supply the polishing liquid on the polishing pad 4 and to borrow the polishing liquid than the conventional method. The method of forming a polishing liquid layer from the flow can further reduce the consumption of the polishing liquid. [Examples] Example 1 Next, when a wafer w is polished using a polishing method related to the present invention using a polishing head related to the present invention (hereinafter, referred to as polishing of the present invention), and In the case where the wafer W is polished using a conventional polishing method using a conventional polishing head, the polishing performance is compared. Here, in this polishing test, the polishing head 6 i shown in the fifth embodiment is used.

313337.ptd Page 47 523443 V. Description of the invention (42) As the grinding head of the present invention. In the conventional grinding, 'in order to achieve sufficient grinding performance, a grinding head' needs to supply a flow of polishing liquid of about 100 mL / mi η. On the contrary, the grinding of the invention of the present application, without reducing the grinding performance, The table polishing head requires a polishing liquid flow rate of 10 m L / mi η, which can reduce the flow rate to about 1/10 compared with the conventional polishing. In addition, in the polishing of the present invention, the wafer W can be polished in a state where the use of the polishing liquid is severely reduced, so that the total amount of condensed particles in the polishing liquid can be reduced, and micro-scratches generated by the wafer can be reduced. As a result, the surface roughness (PV value) of the surface of the wafer W is reduced, and good polishing performance is obtained. Since a Si wafer with a SiGe layer formed on the surface has strict requirements for surface roughness regulations and high flatness is required, the present invention is particularly effective for the polishing of this silicon crystal film. Example 2 The polishing device 111 of the present invention was used in the first polishing process after dressing or after the other polishing processes. After using the spraying device 1 1 2 to remove the pure water on the polishing pad 4 In the case where polishing is performed, and polishing is performed while replacing pure water and polishing liquid without using spray coating, the polishing test is performed under the same polishing conditions, and the abrasiveness is compared. The results are shown below. Here, for the judgment of the polishing performance, in addition to observing the polishing rate of the material to be polished and the in-plane uniformity (flatness), the flow rate and polishing performance of the polishing liquid supplied to the polishing pad 4 are also measured. Relationship detection. As shown in Fig. 14, when the flow rate of the polishing liquid is maintained at 100 cc / mi η

523443 V. Description of the invention (43) Under the conditions, comparing the case of using the spraying device 1 1 2 and the case of not using the spraying device 1 12, the one using the spraying device 1 1 2 has a good grinding rate. And in-plane uniformity, the difference is small. However, with the decrease in the flow rate of the polishing liquid, the polishing rate and the uniformity in the surface will be significantly reduced without using the spraying device 1 12. In contrast, when the spraying device 1 12 is used, The degree of reduction in polishing rate and in-plane uniformity is extremely small. This tendency becomes more and more obvious as the flow rate of the polishing liquid decreases. The polishing liquid flow rate is set to 10 cc / mi η, and the polishing rate is highest when the spraying device is not used. Compared with the time, it decreased by about 40 ° / 〇. On the other hand, when the spraying device 1 1 2 is used, even if the flow rate of the polishing liquid is reduced, the polishing rate remains only 20% lower than the highest polishing rate. In addition, in terms of in-plane uniformity, the degree of deterioration is also small. This is because the polishing liquid is diluted with pure water retained on the polishing pad 4 without using a spraying device 1 12. The polishing process is performed in a state where the concentration of the polishing liquid in the polishing pad 4 is different. On the other hand, when the spraying device 1 1 2 is used, the polishing liquid on the polishing pad 4 is not polished. It is diluted, and polishing is performed in a state where the concentration of the polishing liquid in the polishing pad 4 is uniform. In addition, when the flow rate of the polishing liquid is sufficiently ensured, since the amount of the polishing liquid is larger than the amount of pure water remaining on the polishing pad 4, the polishing liquid concentration can be maintained to a certain degree even if the spraying device 11 2 is not used. However, when the flow rate of the polishing liquid becomes smaller, if the spraying device is not used, the concentration of the polishing liquid will become lower.

313337.ptd Page 49 523443 V. Description of the invention (44) And with the decrease of the flow rate of the grinding fluid, the difference in the grinding performance obviously appears. As described above, “with the grinding device of the present invention, the first grinding process after dressing can be performed” or the grinding process performed after the previous grinding process ”by using the spraying device i 2, even when the flow rate of the polishing liquid is small Under the conditions of 'can still maintain a moderate polishing liquid concentration to maintain polishing performance, so can reduce the flow of polishing liquid and reduce the consumption of polishing liquid. [Industrial Applicability] With the polishing head and the polishing method of the present invention, when polishing the material to be polished, the polishing liquid can be supplied to the outer peripheral surface of the carrier and the inner peripheral surface of the fixing ring through the liquid supply path. The gap between them is supplied to the outer periphery of the material to be polished, so that sufficient polishing liquid can be directly supplied to the material to be polished and the polishing pad without interfering with the rotation of the fixing table and the fixing ring. between. In addition, the polishing liquid supplied between the abrasive and the grinding pad is surrounded by the fixing ring, and even if it receives the centrifugal force generated by the rotation of the grinding head or the fixed table, it does not easily flow out of the outer periphery of the fixing ring. Effective use of abrasive fluids. Thereby, the polishing can be efficiently performed with a minimum amount of polishing liquid used, and the amount of expensive polishing liquid used can be significantly reduced. In addition, by the rotation of the polishing head, the polishing liquid can be repeatedly supplied to the surface of the polishing pad, and the polishing liquid can be effectively used for polishing. In addition, a polishing liquid / washing liquid supply mechanism capable of selectively supplying either a polishing liquid or a cleaning liquid may be provided on the connection liquid supply path. When polishing is performed, the polishing liquid / washing liquid supply mechanism may be used. Supply the polishing liquid to the liquid supply path, and stop the

313337.ptd Page 50 523443 V. Description of the invention (45) The polishing liquid is supplied to the liquid supply path by the polishing liquid / washing liquid supply mechanism, and the cleaning liquid is supplied to the liquid supply path, thereby drying the polishing liquid. Or k-quality, the polishing liquid remaining in the liquid supply path and the polishing liquid remaining in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixed ring is cleaned by a cleaning liquid. In addition, by providing the grooves, the polishing liquid supplied to the outer peripheral surface of the carrier or the inner peripheral surface of the fixed ring can flow down from the entire periphery through the grooves. Therefore, the polishing liquid can be evenly distributed from the entire periphery of the outer periphery of the material to be polished. It is supplied between the material to be polished and the polishing pad, so that the overall polishing amount of the material to be polished is uniform. In addition, when the flow path A is formed in a radial shape from the center of the carrier toward the outer peripheral side, the entire carrier can be cooled by the liquid, thereby effectively suppressing the deformation of the carrier. In addition, when the material to be polished is polished, the polishing liquid is smoothly supplied to the outer peripheral surface of the carrier and the fixed ring by the centrifugal force generated by the rotation of the polishing pad; the gap is set in the valley. An elastic body that permits relative displacement of the devices in the up and down direction, and when a supply port connected to the liquid supply path is provided in the elastic body, the rotation of the fixed table or the fixed ring can be prevented. 'Let a sufficient amount of polishing liquid be directly supplied between the material to be polished and the polishing pad. This polishing liquid is difficult to flow out because the retaining ring surrounds the surrounding, and it is possible to achieve an effective polishing treatment with a minimum amount of polishing liquid used. By the rotation of the polishing head, the polishing liquid can be repeatedly supplied to the surface of the polishing pad. In addition, when a polishing liquid / cleaning liquid supply mechanism is provided, before the polishing liquid is dried or deteriorated, the cleaning liquid will remain in the supply: inside, and between the outer peripheral surface of the carrier and the inner peripheral surface of the retaining ring. The polishing liquid ^ net. / 523443 V. Explanation of the invention (46) In addition, the polishing device of the present invention sprays any one of a gas or a polishing liquid on the surface of the polishing pad by a spraying device, so that the liquid remaining on the polishing pad can be sprayed. The removal is pushed out. Therefore, the polishing liquid traditionally supplied to the polishing pad in order to remove the liquid on the polishing pad is not required, and at the same time, the liquid on the polishing pad can be removed by the polishing liquid more effectively than before, which can greatly reduce Consumption of polishing liquid.

313337.ptd Page 52 523443 Brief description of drawings [Simplified description of drawings] Fig. 1 'is a vertical cross-sectional view showing the structure of a polishing master according to the first embodiment of the present invention. Fig. 2 'is a longitudinal sectional view showing a schematic configuration of an important part of a polishing head according to the first embodiment of the present invention. Fig. 3A is a longitudinal sectional view of another example of the configuration of the polishing head according to the first embodiment of the present invention. Fig. 3B is a longitudinal sectional view of another example of the configuration of the polishing master according to the first embodiment of the present invention. Fig. 4 'is a longitudinal sectional view of a polishing head according to a second embodiment of the present invention. 'FIG. 5' is a longitudinal sectional view of a polishing head structure according to a third embodiment of the present invention. Fig. A is a longitudinal cross-sectional view showing an example of a rubbing hibiscus related to a third type of cancer of the present invention. stomach

The sixth R R is a vertical cross-sectional view of an example of a polishing head broadcast according to a third embodiment of the present invention.

The sixth C R 阋 'is a longitudinal sectional view showing an example of a polishing head according to a third embodiment of the present invention. Fig. 7 'is a longitudinal sectional view of a polishing head according to a fourth embodiment of the present invention. ^ g pj, ® ′ is a longitudinal sectional view of a polishing head according to a fifth embodiment of the present invention. Fig. 9 'shows a polishing head according to a fifth embodiment of the present invention;

523443 Schematic illustration of the front end view. Fig. 10 is an enlarged view schematically showing an important part of a polishing head according to a fifth embodiment of the present invention. Fig. 11 is a longitudinal sectional view of a polishing head structure according to a fifth embodiment of the present invention. Fig. 12 is a perspective view showing the structure of a polishing apparatus according to an embodiment of the present invention. Fig. 13 is a longitudinal sectional view showing the structure of a polishing apparatus according to another embodiment of the present invention. Fig. 14 shows the grinding performance of the grinding apparatus according to the present invention in the case of using a spray coating apparatus and a case where a spraying apparatus is not used. Fig. 15 is a perspective view schematically showing a conventional grinding apparatus. [Explanation of the symbol of the component] Bu 11 Bu 131. Grinding device 2 Central axis 3 Disk-shaped fixing table 4> 46 Polishing pad 5 ^ 11, 46, 51 Λ 6 Bu 71 Grinding head 12 Head body 13 Top plate part 14 Peripheral wall Section 14a Section 15 Film 15a, 28b Open D Section 16 Disk-shaped carrier 16a, 17c Outer peripheral surface 16b, 17b Upper surface 17 Retaining ring 17a Inner peripheral surface 19 Shaft 20a First-through hole 20b Second-through hole

313337.ptd Page 54 523443

Brief description of drawings 21 Carrier fixing ring 23 Receiving portion 23a Inclined surface 26 Diaphragm fixing ring 27 Fluid chamber 28 Supply D 28a Support plate 29 ^ 53 First flexible pipe 30 Pressure adjustment mechanism 31 Polishing / washing liquid supply mechanism 32 ^ 132 polishing liquid supply source 33 cleaning liquid supply source 34 polishing liquid / cleaning liquid supply piping 36 ^ 37 ~ 118 > 134, 138 1 47 wall 48 connection path 52 flow path 52a, 62 ^ 1 1.3 c --Flow path 54 Attachment part 56 to 72 Head body pipe 57 Second flexible pipe 62a Vertical part 62b Horizontal part 64 First groove 6 4a '68a Inner surface 65 to 113d Second flow path 68 Second groove 112 Spray Sub-device 113 Nozzle 113a Nozzle body 113b Ejects π 114 Nozzle moving mechanism 116 Gas supply source 117 No. piping 121 Support shaft 122 Arm 122a, 122b One end 133 Second piping 137 No._one piping 313337.ptd page 55

Claims (1)

523443 6. Scope of patent application 1. A polishing head for pressing the material to be polished on the surface of the polishing pad attached to the fixed table while pressing the material to be polished for polishing the material to be polished, provided with: There are: a carrier that fixes one side of the material to be polished to the lower side; and a carrier that is concentrically arranged on the outer peripheral side of the carrier to abut the aforementioned polishing pad during polishing and is fastened to the inner peripheral surface The annular fixed ring on the outer periphery of the material to be polished of the carrier is characterized in that a liquid supply path for supplying a liquid is formed between an outer peripheral surface of the carrier and an inner peripheral surface of the fixed ring. 2. The polishing head according to item 1 of the patent application scope, wherein the liquid supply path is at least the flow path A provided in the carrier or the flow path B provided in the fixed ring. 3. The polishing head according to item 1 of the patent application range, wherein the liquid supply path is connected to a polishing liquid / cleaning liquid supply mechanism which selectively supplies either a polishing liquid or a cleaning liquid. 4. The polishing head according to item 2 of the patent application, wherein a groove A connected to the channel A and supplying the liquid from the channel A may be formed on the entire periphery of the outer peripheral surface of the carrier. 5. The polishing head according to item 2 of the patent application, wherein a groove B connected to the flow path B and capable of supplying the liquid is formed on the entire circumference of the inner peripheral surface of the fixed ring. 6. As for the polishing head in the second scope of the patent application, wherein the flow path A is passed from the upper part of the carrier to a plurality of parts on the outer peripheral surface and from the center 313337.ptd Page 56 523443 6. Scope of patent application Slightly radial to the outer periphery. 7. For the polishing head in the first item of the patent application scope, wherein the liquid supply path is formed in a circular shape, and its diameter may be greater than 2 mm and less than 10 mm. 8. The polishing head according to item 1 of the scope of patent application, wherein, in the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixed ring, a relative displacement is allowed in the upper and lower directions of the devices, and The connected elastic body is provided with a supply port for supplying liquid to the gap, and the liquid supply path is connected to the supply port. 9. The polishing head according to item 8 of the scope of patent application, wherein at least one side of the outer peripheral edge of the carrier or the inner peripheral edge of the fixing ring is located at a portion opposite to the elastic body and at a position opposite to the other peripheral edge portion. A receiving portion is formed between the receiving spaces, and the elastic body is provided with the supply port at a position opposite to the receiving space. 10. The polishing head according to item 9 of the scope of patent application, wherein the aforementioned accommodating portion is provided on the entire periphery of the periphery of the accommodating portion. 1 1. The polishing head according to item 9 of the scope of patent application, wherein, in the gap below the aforementioned receiving portion and on the peripheral surface of the peripheral portion where the receiving portion is provided, there are provided: a wall portion standing upright; and A connection path connecting the storage portion and the peripheral surface to a plurality of locations in the circumferential direction of the wall portion. 1 2. The grinding head according to item 11 of the scope of patent application, wherein the grinding head is in the receiving department 313337.ptd Page 57 523443 VI. Patent Application Fan Park Below, an inclined surface that gradually slopes downward toward the peripheral surface is provided. 1 3 · A polishing method, which uses a polishing head and the aforementioned polishing pad to move in the opposite direction on the surface of a polishing pad attached to a fixed table, and presses the ground material to grind the polishing material. In the polishing head according to the scope of the patent application, the polishing liquid is supplied to the gap between the outer peripheral surface of the carrier and the inner peripheral surface of the fixing ring from the liquid supply path while the polishing liquid is supplied. 1 4. A polishing device is a polishing pad attached to a fixed surface. The polishing head and the polishing pad are moved relative to each other, and the material to be polished is pressed while grinding the material to be polished. The surface is provided with a spraying device capable of spraying at least one of a gas and a polishing liquid.丨 5 _If the scope of the patent application device is provided with: a mouth; and the moving mechanism. The polishing device of item 14 is used to eject the gas nozzle on the polishing pad, wherein the nozzle 16 that is sprayed or moved on the spray surface of the polishing liquid is the polishing device of item 15 in the scope of patent application, where The nozzle is connected to a polishing liquid / cleaning liquid supply mechanism that selectively supplies either the polishing liquid or the cleaning liquid. i 7 • —A grinding method for grinding the material to be ground using the grinding device of the scope of application for patent No. 14 is characterized by spraying gas or polishing liquid on the surface of the polishing pad through the aforementioned nozzle coating f, and removing After the liquid on the research pad, the polishing liquid is supplied to the polishing pad. Page 58 523443 6. Scope of patent application To grind the material to be ground. ι ·· ιι 313337.ptd Page 59