KR20060004659A - 복수-높이 finfet - Google Patents
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- KR20060004659A KR20060004659A KR1020057018446A KR20057018446A KR20060004659A KR 20060004659 A KR20060004659 A KR 20060004659A KR 1020057018446 A KR1020057018446 A KR 1020057018446A KR 20057018446 A KR20057018446 A KR 20057018446A KR 20060004659 A KR20060004659 A KR 20060004659A
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- 239000004020 conductor Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 5
- 230000000694 effects Effects 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 6
- 241000270730 Alligator mississippiensis Species 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (22)
- FinFET 장치로서,제1 핀(80)과 제2 핀(81) - 상기 각 핀은 채널 영역과 상기 채널 영역으로부터 연장되는 소스 및 드레인 영역을 포함함 - 을 포함하고,상기 제1 핀(80)과 상기 제2 핀(81)은 각기 다른 높이를 갖는FinFET 장치.
- 제1항에 있어서,상기 제1 핀과 상기 제2 핀에 인접하여 배치된 게이트 도전체(90)를 더 포함하고, 상기 게이트 도전체는 상기 제1 핀에 대해 67.5도의 각도로 전개되는 FinFET 장치.
- 제1항에 있어서,상기 제1 핀과 상기 제2 핀에 인접하여 배치된 게이트 도전체(90)를 더 포함하고, 상기 게이트 도전체는 상기 제1 핀과 상기 제2 핀에 대해 수직으로 전개되는 FinFET 장치.
- 제3항에 있어서,상기 게이트 도전체(90)는 상기 제1 핀과 상기 제2 핀 각각의 상기 채널 영 역을 가로지르는 FinFET 장치.
- 제1항에 있어서,상기 제1 핀(80)과 상기 제2 핀(81)이 서로 평행한 FinFET 장치.
- 제1항에 있어서,상기 제1 핀(80)의 높이와 상기 제2 핀(81)의 높이의 비율이 1 대 2/3의 비율을 갖는 FinFET 장치.
- 제6항에 있어서,상기 비율이 상기 FinFET 장치의 성능을 조율하는데 이용되는 FinFET 장치.
- 제6항에 있어서,상기 비율이 상기 FinFET 장치의 총 채널 폭을 결정하는 FinFET 장치.
- 제1항의 FinFET 장치를 포함하는 집적 회로.
- 제9항에 있어서,제1 게이트 도전체가 상기 제1 핀(80)에 인접하여 배치되고, 상기 제1 게이트 도전체는 상기 제1 핀(80)에 수직하게 전개되며,제2 게이트 도전체가 상기 제2 핀(81)에 인접하여 배치되고, 상기 제2 게이트 도전체는 상기 제2 핀(81)에 수직하게 전개되는 집적 회로.
- 제10항에 있어서,상기 제1 게이트 도전체가 상기 제1 핀(80)의 채널 영역을 가로지르고, 상기 제2 게이트 도전체가 상기 제2 핀(81)의 채널 영역을 가로지르는 집적 회로.
- 제9항에 있어서,상기 제1 핀(80)의 높이 대 상기 제2 핀(81)의 높이의 비율은 1 대 2/3의 비율을 갖는 집적 회로.
- 제12항에 있어서,상기 비율이 상기 회로의 성능을 조율하는데 이용되는 집적 회로.
- 제12항에 있어서,상기 비율이 상기 제1 FinFET과 상기 제2 FinFET의 채널 폭들을 결정하는 집적 회로.
- 제1항에 따른 FinFET 장치를 복수 개 포함하는 집적 회로.
- 제1항의 FinFET 장치를 제조하는 방법으로서,기판 상에 활성 실리콘층을 형성하는 단계(102)와,상기 활성 실리콘층 상에 마스크를 패터닝하는 단계(104)와,열 산화를 행하여 상기 마스크에 의해 보호되지 않는 상기 활성 실리콘층의 좁은(shortened) 영역의 높이를 줄이는 단계(106)와,상기 마스크를 제거하는 단계(108)와,상기 활성 실리콘층을 핀들로 패터닝하는 단계 - 상기 좁은 영역에서 생성된 핀들은 상기 활성 실리콘층의 다른 영역에서 생성된 핀들에 비해 더 작은 높이를 가짐 - (112)를 포함하는 제조 방법.
- 제16항에 있어서,실리콘 기판 상에 하층 산화막(bottom oxide)를 성장시켜 상기 구조를 형성하는 단계(100)를 더 포함하는 제조 방법.
- 제16항에 있어서,상기 활성 실리콘층을 패터닝하는 단계(112)는상기 활성 실리콘층 위에 제2 마스크를 패터닝하는 단계와,상기 활성 실리콘층의 영역을 상기 핀들로 에칭하는 단계를 포함하는 제조 방법.
- 제16항에 있어서,상기 핀들 위에서 게이트 도전체를 패터닝하여, 상기 게이트 도전체가 상기 핀들의 채널 영역을 가로지르도록 하는 단계를 더 포함하는 제조 방법.
- 제16항에 있어서,상기 열 산화 공정(106)이 상기 좁은 영역의 상기 높이를 상기 활성 실리콘층의 높이의 2/3까지 줄이도록 제어되는 제조 방법.
- 제16항에 있어서,상기 열 산화 공정(106)은 상기 FinFET 장치의 성능을 조율하는데 이용되는 제조 방법.
- 제16항에 있어서,상기 열 산화 공정(106)은 상기 FinFET 장치의 총 채널 폭들을 결정하는 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/249,738 US6909147B2 (en) | 2003-05-05 | 2003-05-05 | Multi-height FinFETS |
US10/249,738 | 2003-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060004659A true KR20060004659A (ko) | 2006-01-12 |
KR100690559B1 KR100690559B1 (ko) | 2007-03-12 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057018446A KR100690559B1 (ko) | 2003-05-05 | 2004-01-30 | 복수-높이 finfet |
Country Status (8)
Country | Link |
---|---|
US (1) | US6909147B2 (ko) |
EP (1) | EP1620891B1 (ko) |
KR (1) | KR100690559B1 (ko) |
CN (1) | CN100466229C (ko) |
AT (1) | ATE403937T1 (ko) |
DE (1) | DE602004015592D1 (ko) |
TW (1) | TWI289354B (ko) |
WO (1) | WO2004100290A2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160075474A (ko) * | 2014-08-07 | 2016-06-29 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 장치 및 그 제조 방법 |
US9564435B2 (en) | 2014-10-13 | 2017-02-07 | Samsung Electronics Co., Ltd. | Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device |
Families Citing this family (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005621A (ja) * | 2003-06-13 | 2005-01-06 | Toyota Industries Corp | Dcアンプ及びその半導体集積回路 |
US6992354B2 (en) * | 2003-06-25 | 2006-01-31 | International Business Machines Corporation | FinFET having suppressed parasitic device characteristics |
US6894326B2 (en) * | 2003-06-25 | 2005-05-17 | International Business Machines Corporation | High-density finFET integration scheme |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7095065B2 (en) * | 2003-08-05 | 2006-08-22 | Advanced Micro Devices, Inc. | Varying carrier mobility in semiconductor devices to achieve overall design goals |
JP2005086024A (ja) * | 2003-09-09 | 2005-03-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US6970373B2 (en) * | 2003-10-02 | 2005-11-29 | Intel Corporation | Method and apparatus for improving stability of a 6T CMOS SRAM cell |
WO2005091374A1 (ja) * | 2004-03-19 | 2005-09-29 | Nec Corporation | 半導体装置及びその製造方法 |
KR100576361B1 (ko) * | 2004-03-23 | 2006-05-03 | 삼성전자주식회사 | 3차원 시모스 전계효과 트랜지스터 및 그것을 제조하는 방법 |
DE102004020593A1 (de) * | 2004-04-27 | 2005-11-24 | Infineon Technologies Ag | Fin-Feldeffekttransistor-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Anordnung |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7332439B2 (en) | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7183142B2 (en) * | 2005-01-13 | 2007-02-27 | International Business Machines Corporation | FinFETs with long gate length at high density |
US7094650B2 (en) * | 2005-01-20 | 2006-08-22 | Infineon Technologies Ag | Gate electrode for FinFET device |
US7470951B2 (en) * | 2005-01-31 | 2008-12-30 | Freescale Semiconductor, Inc. | Hybrid-FET and its application as SRAM |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
JP2006269975A (ja) * | 2005-03-25 | 2006-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
JP2007103455A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | フィン構造の半導体装置及びその製造方法 |
US7452768B2 (en) | 2005-10-25 | 2008-11-18 | Freescale Semiconductor, Inc. | Multiple device types including an inverted-T channel transistor and method therefor |
US8513066B2 (en) * | 2005-10-25 | 2013-08-20 | Freescale Semiconductor, Inc. | Method of making an inverted-T channel transistor |
US20070117311A1 (en) * | 2005-11-23 | 2007-05-24 | Advanced Technology Development Facility, Inc. | Three-dimensional single transistor semiconductor memory device and methods for making same |
US7723805B2 (en) * | 2006-01-10 | 2010-05-25 | Freescale Semiconductor, Inc. | Electronic device including a fin-type transistor structure and a process for forming the electronic device |
US7709303B2 (en) * | 2006-01-10 | 2010-05-04 | Freescale Semiconductor, Inc. | Process for forming an electronic device including a fin-type structure |
US7754560B2 (en) * | 2006-01-10 | 2010-07-13 | Freescale Semiconductor, Inc. | Integrated circuit using FinFETs and having a static random access memory (SRAM) |
US7323373B2 (en) * | 2006-01-25 | 2008-01-29 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device with decreased undercutting of semiconductor material |
US7456055B2 (en) | 2006-03-15 | 2008-11-25 | Freescale Semiconductor, Inc. | Process for forming an electronic device including semiconductor fins |
US7419866B2 (en) * | 2006-03-15 | 2008-09-02 | Freescale Semiconductor, Inc. | Process of forming an electronic device including a semiconductor island over an insulating layer |
US7625776B2 (en) * | 2006-06-02 | 2009-12-01 | Micron Technology, Inc. | Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon |
US7709341B2 (en) * | 2006-06-02 | 2010-05-04 | Micron Technology, Inc. | Methods of shaping vertical single crystal silicon walls and resulting structures |
US7628932B2 (en) * | 2006-06-02 | 2009-12-08 | Micron Technology, Inc. | Wet etch suitable for creating square cuts in si |
US7544994B2 (en) * | 2006-11-06 | 2009-06-09 | International Business Machines Corporation | Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structure |
US7655989B2 (en) * | 2006-11-30 | 2010-02-02 | International Business Machines Corporation | Triple gate and double gate finFETs with different vertical dimension fins |
US7709893B2 (en) * | 2007-01-31 | 2010-05-04 | Infineon Technologies Ag | Circuit layout for different performance and method |
US7612405B2 (en) * | 2007-03-06 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of FinFETs with multiple fin heights |
US7560785B2 (en) * | 2007-04-27 | 2009-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having multiple fin heights |
CN100527442C (zh) * | 2007-06-05 | 2009-08-12 | 北京大学 | 一种双鳍型沟道双栅多功能场效应晶体管及其制备方法 |
US20090001470A1 (en) * | 2007-06-26 | 2009-01-01 | Anderson Brent A | Method for forming acute-angle spacer for non-orthogonal finfet and the resulting structure |
US7737501B2 (en) * | 2007-07-11 | 2010-06-15 | International Business Machines Corporation | FinFET SRAM with asymmetric gate and method of manufacture thereof |
US7859044B2 (en) * | 2007-07-24 | 2010-12-28 | International Business Machines Corporation | Partially gated FINFET with gate dielectric on only one sidewall |
US20090057780A1 (en) * | 2007-08-27 | 2009-03-05 | International Business Machines Corporation | Finfet structure including multiple semiconductor fin channel heights |
US7791063B2 (en) * | 2007-08-30 | 2010-09-07 | Intel Corporation | High hole mobility p-channel Ge transistor structure on Si substrate |
US20090057846A1 (en) * | 2007-08-30 | 2009-03-05 | Doyle Brian S | Method to fabricate adjacent silicon fins of differing heights |
US7710765B2 (en) * | 2007-09-27 | 2010-05-04 | Micron Technology, Inc. | Back gated SRAM cell |
US8022478B2 (en) * | 2008-02-19 | 2011-09-20 | International Business Machines Corporation | Method of forming a multi-fin multi-gate field effect transistor with tailored drive current |
US7888750B2 (en) * | 2008-02-19 | 2011-02-15 | International Business Machines Corporation | Multi-fin multi-gate field effect transistor with tailored drive current |
US8106459B2 (en) | 2008-05-06 | 2012-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs having dielectric punch-through stoppers |
US8048723B2 (en) | 2008-12-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Germanium FinFETs having dielectric punch-through stoppers |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US20090321834A1 (en) | 2008-06-30 | 2009-12-31 | Willy Rachmady | Substrate fins with different heights |
JP5442235B2 (ja) * | 2008-11-06 | 2014-03-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
US8263462B2 (en) * | 2008-12-31 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dielectric punch-through stoppers for forming FinFETs having dual fin heights |
US8293616B2 (en) | 2009-02-24 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabrication of semiconductor devices with low capacitance |
US7855105B1 (en) * | 2009-06-18 | 2010-12-21 | International Business Machines Corporation | Planar and non-planar CMOS devices with multiple tuned threshold voltages |
US8188546B2 (en) * | 2009-08-18 | 2012-05-29 | International Business Machines Corporation | Multi-gate non-planar field effect transistor structure and method of forming the structure using a dopant implant process to tune device drive current |
US8021949B2 (en) * | 2009-12-01 | 2011-09-20 | International Business Machines Corporation | Method and structure for forming finFETs with multiple doping regions on a same chip |
US20110147848A1 (en) * | 2009-12-23 | 2011-06-23 | Kuhn Kelin J | Multiple transistor fin heights |
US8524546B2 (en) | 2010-10-22 | 2013-09-03 | International Business Machines Corporation | Formation of multi-height MUGFET |
US8524545B2 (en) | 2010-10-22 | 2013-09-03 | International Business Machines Corporation | Simultaneous formation of FinFET and MUGFET |
CN103022038B (zh) * | 2011-09-21 | 2015-06-10 | 中国科学院微电子研究所 | Sram单元及其制作方法 |
US8497198B2 (en) * | 2011-09-23 | 2013-07-30 | United Microelectronics Corp. | Semiconductor process |
CN103187284B (zh) * | 2011-12-29 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 场效应晶体管的制作方法 |
US8809178B2 (en) | 2012-02-29 | 2014-08-19 | Globalfoundries Inc. | Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents |
KR101823105B1 (ko) | 2012-03-19 | 2018-01-30 | 삼성전자주식회사 | 전계 효과 트랜지스터의 형성 방법 |
US8927432B2 (en) * | 2012-06-14 | 2015-01-06 | International Business Machines Corporation | Continuously scalable width and height semiconductor fins |
US9583398B2 (en) * | 2012-06-29 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having FinFETS with different fin profiles |
US9082873B2 (en) | 2012-09-20 | 2015-07-14 | International Business Machines Corporation | Method and structure for finFET with finely controlled device width |
CN103811340B (zh) * | 2012-11-09 | 2017-07-14 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9123654B2 (en) * | 2013-02-15 | 2015-09-01 | International Business Machines Corporation | Trilayer SIT process with transfer layer for FINFET patterning |
US9159576B2 (en) | 2013-03-05 | 2015-10-13 | Qualcomm Incorporated | Method of forming finFET having fins of different height |
TWI570812B (zh) * | 2013-03-06 | 2017-02-11 | 聯華電子股份有限公司 | 形成鰭狀結構的方法 |
US9331201B2 (en) | 2013-05-31 | 2016-05-03 | Globalfoundries Inc. | Multi-height FinFETs with coplanar topography background |
US9293466B2 (en) | 2013-06-19 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded SRAM and methods of forming the same |
CN104253046B (zh) * | 2013-06-26 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
US9093275B2 (en) | 2013-10-22 | 2015-07-28 | International Business Machines Corporation | Multi-height multi-composition semiconductor fins |
US9704880B2 (en) * | 2013-11-06 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for a semiconductor structure having multiple semiconductor-device layers |
WO2015099691A1 (en) * | 2013-12-23 | 2015-07-02 | Intel Corporation | Advanced etching techniques for straight, tall and uniform fins across multiple fin pitch structures |
US9190466B2 (en) | 2013-12-27 | 2015-11-17 | International Business Machines Corporation | Independent gate vertical FinFET structure |
US9691763B2 (en) | 2013-12-27 | 2017-06-27 | International Business Machines Corporation | Multi-gate FinFET semiconductor device with flexible design width |
US9318488B2 (en) | 2014-01-06 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and formation thereof |
US20150287743A1 (en) | 2014-04-02 | 2015-10-08 | International Business Machines Corporation | Multi-height fin field effect transistors |
US9887196B2 (en) | 2014-04-07 | 2018-02-06 | International Business Machines Corporation | FinFET including tunable fin height and tunable fin width ratio |
US9418903B2 (en) | 2014-05-21 | 2016-08-16 | Globalfoundries Inc. | Structure and method for effective device width adjustment in finFET devices using gate workfunction shift |
KR102352154B1 (ko) * | 2015-03-03 | 2022-01-17 | 삼성전자주식회사 | 집적회로 소자 |
US9515089B1 (en) | 2015-05-14 | 2016-12-06 | International Business Machines Corporation | Bulk fin formation with vertical fin sidewall profile |
EP3518289A1 (en) * | 2015-09-25 | 2019-07-31 | Intel Corporation | High-voltage transistor with self-aligned isolation |
US9577066B1 (en) | 2016-02-26 | 2017-02-21 | Globalfoundries Inc. | Methods of forming fins with different fin heights |
DE102017125352B4 (de) * | 2017-08-30 | 2020-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zur Bildung von FinFETs |
US10541319B2 (en) | 2017-08-30 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin structures having varied fin heights for semiconductor device |
US10068902B1 (en) | 2017-09-26 | 2018-09-04 | Globalfoundries Inc. | Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method |
US10325811B2 (en) * | 2017-10-26 | 2019-06-18 | Globalfoundries Inc. | Field-effect transistors with fins having independently-dimensioned sections |
US10297667B1 (en) | 2017-12-22 | 2019-05-21 | International Business Machines Corporation | Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor |
US10593598B2 (en) * | 2017-12-23 | 2020-03-17 | International Business Machines Corporation | Vertical FET with various gate lengths by an oxidation process |
US11257928B2 (en) * | 2018-11-27 | 2022-02-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for epitaxial growth and device |
US11011517B2 (en) | 2019-01-02 | 2021-05-18 | International Business Machines Corporation | Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0214578A (ja) * | 1988-07-01 | 1990-01-18 | Fujitsu Ltd | 半導体装置 |
US6288431B1 (en) * | 1997-04-04 | 2001-09-11 | Nippon Steel Corporation | Semiconductor device and a method of manufacturing the same |
EP1091413A3 (en) * | 1999-10-06 | 2005-01-12 | Lsi Logic Corporation | Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet |
US6252284B1 (en) | 1999-12-09 | 2001-06-26 | International Business Machines Corporation | Planarized silicon fin device |
US20020011612A1 (en) * | 2000-07-31 | 2002-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP4044276B2 (ja) * | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6562665B1 (en) * | 2000-10-16 | 2003-05-13 | Advanced Micro Devices, Inc. | Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US6657259B2 (en) * | 2001-12-04 | 2003-12-02 | International Business Machines Corporation | Multiple-plane FinFET CMOS |
US6706571B1 (en) * | 2002-10-22 | 2004-03-16 | Advanced Micro Devices, Inc. | Method for forming multiple structures in a semiconductor device |
US6864519B2 (en) * | 2002-11-26 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS SRAM cell configured using multiple-gate transistors |
US6645797B1 (en) * | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
US7214991B2 (en) * | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
US6762448B1 (en) * | 2003-04-03 | 2004-07-13 | Advanced Micro Devices, Inc. | FinFET device with multiple fin structures |
-
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160075474A (ko) * | 2014-08-07 | 2016-06-29 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 장치 및 그 제조 방법 |
US9793269B2 (en) | 2014-08-07 | 2017-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US10269794B2 (en) | 2014-08-07 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US9564435B2 (en) | 2014-10-13 | 2017-02-07 | Samsung Electronics Co., Ltd. | Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TWI289354B (en) | 2007-11-01 |
CN100466229C (zh) | 2009-03-04 |
EP1620891A4 (en) | 2007-03-28 |
WO2004100290A3 (en) | 2005-02-24 |
KR100690559B1 (ko) | 2007-03-12 |
ATE403937T1 (de) | 2008-08-15 |
US6909147B2 (en) | 2005-06-21 |
EP1620891A2 (en) | 2006-02-01 |
EP1620891B1 (en) | 2008-08-06 |
US20040222477A1 (en) | 2004-11-11 |
CN1784782A (zh) | 2006-06-07 |
DE602004015592D1 (de) | 2008-09-18 |
TW200507265A (en) | 2005-02-16 |
WO2004100290A2 (en) | 2004-11-18 |
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