KR20050061538A - 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물 - Google Patents

포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물 Download PDF

Info

Publication number
KR20050061538A
KR20050061538A KR1020057006474A KR20057006474A KR20050061538A KR 20050061538 A KR20050061538 A KR 20050061538A KR 1020057006474 A KR1020057006474 A KR 1020057006474A KR 20057006474 A KR20057006474 A KR 20057006474A KR 20050061538 A KR20050061538 A KR 20050061538A
Authority
KR
South Korea
Prior art keywords
group
photoresist
tert
organic
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057006474A
Other languages
English (en)
Korean (ko)
Inventor
미츠루 우에다
히로토시 이시이
Original Assignee
이데미쓰 고산 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데미쓰 고산 가부시키가이샤 filed Critical 이데미쓰 고산 가부시키가이샤
Publication of KR20050061538A publication Critical patent/KR20050061538A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/235—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring and to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C43/253—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring and to a carbon atom of a ring other than a six-membered aromatic ring containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/708—Ethers
    • C07C69/712—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
    • C07C69/734—Ethers
    • C07C69/736—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96—Esters of carbonic or haloformic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
    • C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
    • C07D309/04—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020057006474A 2002-10-15 2003-09-01 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물 Ceased KR20050061538A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002300144 2002-10-15
JPJP-P-2002-00300144 2002-10-15
JPJP-P-2003-00112458 2003-04-17
JP2003112458A JP4429620B2 (ja) 2002-10-15 2003-04-17 感放射線性有機化合物

Publications (1)

Publication Number Publication Date
KR20050061538A true KR20050061538A (ko) 2005-06-22

Family

ID=32109447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057006474A Ceased KR20050061538A (ko) 2002-10-15 2003-09-01 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물

Country Status (7)

Country Link
US (1) US20050271971A1 (https=)
EP (1) EP1553451A4 (https=)
JP (1) JP4429620B2 (https=)
KR (1) KR20050061538A (https=)
AU (1) AU2003261865A1 (https=)
TW (1) TWI282037B (https=)
WO (1) WO2004036315A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7001708B1 (en) * 2001-11-28 2006-02-21 University Of Central Florida Research Foundation, Inc. Photosensitive polymeric material for worm optical data storage with two-photon fluorescent readout
US7923192B2 (en) 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
WO2005097725A1 (ja) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物
JP3946715B2 (ja) 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
TWI400568B (zh) 2004-12-24 2013-07-01 Mitsubishi Gas Chemical Co 感放射線性組成物、非晶質膜及形成光阻圖案的方法
JP4618715B2 (ja) * 2005-01-27 2011-01-26 日東電工株式会社 液晶化合物
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US20090042123A1 (en) * 2005-06-01 2009-02-12 Hiroo Kinoshita Calixresorcinarene compound, photoresist base comprising the same, and composition thereof
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP2009527019A (ja) * 2006-02-16 2009-07-23 コーネル・リサーチ・ファンデーション・インコーポレイテッド ２００ｎｍ未満リソグラフィー用アダマンタン系分子性ガラスフォトレジスト
JPWO2008136372A1 (ja) * 2007-04-27 2010-07-29 出光興産株式会社 フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物
JP5396738B2 (ja) * 2007-05-09 2014-01-22 三菱瓦斯化学株式会社 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法
US20100190107A1 (en) * 2007-06-15 2010-07-29 Idemitsu Kosan Co. Ltd Cyclic compound, photoresist base material and photoresist composition
JPWO2009001927A1 (ja) * 2007-06-28 2010-08-26 出光興産株式会社 置換基を導入した環状化合物の製造方法及びフォトレジスト基材
JP5354420B2 (ja) * 2007-12-11 2013-11-27 出光興産株式会社 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
JP5435995B2 (ja) * 2009-01-30 2014-03-05 出光興産株式会社 環状化合物の製造方法
JP5701576B2 (ja) 2009-11-20 2015-04-15 富士フイルム株式会社 分散組成物及び感光性樹脂組成物、並びに固体撮像素子
JP2013079230A (ja) 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
JP2013067612A (ja) 2011-09-23 2013-04-18 Rohm & Haas Electronic Materials Llc カリックスアレーン化合物およびこれを含むフォトレジスト組成物
KR101935293B1 (ko) * 2016-10-28 2019-01-04 한양대학교 에리카산학협력단 새로운 레졸신아렌 기반의 양친매성 화합물 및 이의 활용

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295211B1 (de) * 1987-06-12 1994-03-16 Ciba-Geigy Ag Photoresistzusammensetzungen
JP3039048B2 (ja) * 1991-11-01 2000-05-08 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JP2655384B2 (ja) * 1991-11-08 1997-09-17 富士写真フイルム株式会社 ポジ型レジスト組成物
JP3340864B2 (ja) * 1994-10-26 2002-11-05 富士写真フイルム株式会社 ポジ型化学増幅レジスト組成物
JPH10310545A (ja) * 1997-05-09 1998-11-24 Jsr Corp フェノール系デンドリマー化合物およびそれを含む感放射線性組成物
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Industrial Co Ltd Pattern forming method
JPH11322656A (ja) * 1998-05-11 1999-11-24 Jsr Corp 新規なカリックスアレーン誘導体およびカリックスレゾルシナレーン誘導体、ならびに感光性組成物
US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
JP3850596B2 (ja) * 1999-02-25 2006-11-29 本州化学工業株式会社 新規な部分保護トリスフェノール類とその製造方法
JP4135277B2 (ja) * 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4141625B2 (ja) * 2000-08-09 2008-08-27 東京応化工業株式会社 ポジ型レジスト組成物およびそのレジスト層を設けた基材
JP2002182392A (ja) * 2000-12-11 2002-06-26 Fuji Photo Film Co Ltd 電子線又はｘ線用ポジ型レジスト組成物
JP2002229193A (ja) * 2001-02-06 2002-08-14 Fuji Photo Film Co Ltd 電子線又はｘ線用ポジ型レジスト組成物
EP1375463A4 (en) * 2001-03-29 2009-09-02 Osaka Gas Co Ltd OPTICALLY ACTIVE COMPOUND AND PHOTOSENSITIVE RESIN COMPOSITION
JP3988580B2 (ja) * 2001-08-23 2007-10-10 Ｊｓｒ株式会社 スルホニルオキシム化合物、それを使用する感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物
JP4004820B2 (ja) * 2001-10-01 2007-11-07 富士フイルム株式会社 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物
US7013965B2 (en) * 2003-04-29 2006-03-21 General Electric Company Organic matrices containing nanomaterials to enhance bulk thermal conductivity

Also Published As

Publication number Publication date
AU2003261865A1 (en) 2004-05-04
WO2004036315B1 (ja) 2004-06-03
EP1553451A1 (en) 2005-07-13
EP1553451A4 (en) 2009-12-16
TW200405957A (en) 2004-04-16
JP4429620B2 (ja) 2010-03-10
JP2004191913A (ja) 2004-07-08
US20050271971A1 (en) 2005-12-08
TWI282037B (en) 2007-06-01
WO2004036315A1 (ja) 2004-04-29

Similar Documents

Publication Publication Date Title
KR20050061538A (ko) 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물
JP2770740B2 (ja) 橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
CN106715398B (zh) 于抗蚀剂应用中作为光酸生成剂的磺酸衍生化合物
TWI477495B (zh) 光酸產生劑及含該光酸產生劑之光阻
TWI457708B (zh) 化學增幅型正型光阻組成物及圖型之形成方法
KR100526736B1 (ko) 락톤 구조를 갖는 (메트)아크릴레이트 화합물, 그의중합체, 레지스트 재료 및 패턴 형성 방법
JP2016177202A (ja) レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物
JP5111106B2 (ja) カリックスレゾルシナレン化合物、並びに、それからなるフォトレジスト基材及びその組成物
JP2012031134A (ja) 光酸発生剤およびこれを含むフォトレジスト
JPWO2005097725A1 (ja) カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物
JP3587743B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
TWI231408B (en) Resist composition and method for manufacturing semiconductor device
JP2000086725A (ja) フォトレジスト単量体、フォトレジスト共重合体、フォトレジスト共重合体の製造方法、フォトレジスト組成物、フォトレジストパタ―ン形成方法、及び半導体素子
KR20090049862A (ko) 감광성 화합물 및 이를 포함하는 포토레지스트 조성물
JP2964990B2 (ja) 橋かけ環式アルキル基を有する光酸発生剤を含有する感光性樹脂組成物、およびそれを用いたパターン形成方法
JP2005075767A (ja) フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物
JP2965016B2 (ja) 遠紫外線露光用感光性樹脂組成物、及びそれを用いたパターン形成方法
KR101021456B1 (ko) 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법, 고분자 화합물 및 화합물
JP4336925B2 (ja) レジスト材料及びパターン形成方法
KR100400292B1 (ko) 신규의포토레지스트용모노머,그의공중합체및이를이용한포토레지스트조성물
JP4042395B2 (ja) スルホニウム塩及びその用途
CN119451998A (zh) 组合物、树脂组合物、膜形成用组合物、图案形成方法及化合物
JPH03273252A (ja) 溶解阻止剤及びポジ型レジスト組成物
JP2001187780A (ja) オキソアルキル基を有するスルホニウム塩化合物、レジスト組成物、およびそれを用いたパターン形成方法
CN101650531A (zh) 间苯二酚杯芳烃化合物、光致抗蚀剂基材及其组合物

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20050414

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20080704

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20091029

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20100205

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20091029

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I