KR20050044806A - 물질을 제거하기 위한 시스템 및 방법 - Google Patents

물질을 제거하기 위한 시스템 및 방법 Download PDF

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Publication number
KR20050044806A
KR20050044806A KR1020057004564A KR20057004564A KR20050044806A KR 20050044806 A KR20050044806 A KR 20050044806A KR 1020057004564 A KR1020057004564 A KR 1020057004564A KR 20057004564 A KR20057004564 A KR 20057004564A KR 20050044806 A KR20050044806 A KR 20050044806A
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KR
South Korea
Prior art keywords
plasma
gas
crust
photoresist
residue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057004564A
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English (en)
Korean (ko)
Inventor
린 조지
존 자작
대니얼 제이. 디바인
크레이그 랜프트
안드레아스 카다바니치
Original Assignee
맷슨 테크놀로지, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 맷슨 테크놀로지, 인크. filed Critical 맷슨 테크놀로지, 인크.
Publication of KR20050044806A publication Critical patent/KR20050044806A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020057004564A 2002-09-18 2003-09-16 물질을 제거하기 위한 시스템 및 방법 Withdrawn KR20050044806A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41206702P 2002-09-18 2002-09-18
US60/412,067 2002-09-18

Publications (1)

Publication Number Publication Date
KR20050044806A true KR20050044806A (ko) 2005-05-12

Family

ID=32030795

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057004564A Withdrawn KR20050044806A (ko) 2002-09-18 2003-09-16 물질을 제거하기 위한 시스템 및 방법

Country Status (8)

Country Link
US (1) US20040084150A1 (https=)
JP (1) JP2006507667A (https=)
KR (1) KR20050044806A (https=)
CN (1) CN1682353A (https=)
AU (1) AU2003270735A1 (https=)
DE (1) DE10393277T5 (https=)
TW (1) TW200414279A (https=)
WO (1) WO2004027826A2 (https=)

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US20080102644A1 (en) * 2006-10-31 2008-05-01 Novellus Systems, Inc. Methods for removing photoresist from a semiconductor substrate
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US7723240B2 (en) * 2008-05-15 2010-05-25 Macronix International Co., Ltd. Methods of low temperature oxidation
WO2011047179A2 (en) * 2009-10-14 2011-04-21 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Plasma ashing compounds and methods of use
JP5558200B2 (ja) * 2010-05-13 2014-07-23 シャープ株式会社 プラズマアッシング方法及びプラズマアッシング装置
KR20130141550A (ko) * 2010-10-27 2013-12-26 어플라이드 머티어리얼스, 인코포레이티드 포토레지스트 선폭 거칠기를 조절하기 위한 방법들 및 장치
US9805912B2 (en) * 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
US20130288469A1 (en) * 2012-04-27 2013-10-31 Applied Materials, Inc. Methods and apparatus for implanting a dopant material
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
CN104576309B (zh) * 2013-10-11 2018-02-27 中芯国际集成电路制造(上海)有限公司 从多芯片封装结构中获取底层芯片的方法
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US20150357203A1 (en) * 2014-06-05 2015-12-10 Macronix International Co., Ltd. Patterning method and patterning apparatus
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10599039B2 (en) 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10403492B1 (en) * 2018-12-11 2019-09-03 Mattson Technology, Inc. Integration of materials removal and surface treatment in semiconductor device fabrication
CN109698126A (zh) * 2018-12-24 2019-04-30 上海华力集成电路制造有限公司 改善硅针孔缺陷的方法

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Also Published As

Publication number Publication date
CN1682353A (zh) 2005-10-12
WO2004027826A2 (en) 2004-04-01
WO2004027826A3 (en) 2005-01-20
AU2003270735A8 (en) 2004-04-08
US20040084150A1 (en) 2004-05-06
TW200414279A (en) 2004-08-01
DE10393277T5 (de) 2005-09-01
JP2006507667A (ja) 2006-03-02
AU2003270735A1 (en) 2004-04-08

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PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

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