KR20040091038A - 회로 제작용 간극 마스크 - Google Patents
회로 제작용 간극 마스크 Download PDFInfo
- Publication number
- KR20040091038A KR20040091038A KR10-2004-7012545A KR20047012545A KR20040091038A KR 20040091038 A KR20040091038 A KR 20040091038A KR 20047012545 A KR20047012545 A KR 20047012545A KR 20040091038 A KR20040091038 A KR 20040091038A
- Authority
- KR
- South Korea
- Prior art keywords
- gap
- mask
- polymer
- gap mask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 139
- 238000003475 lamination Methods 0.000 claims abstract description 63
- 230000008569 process Effects 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 93
- 229920000642 polymer Polymers 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 69
- 239000010409 thin film Substances 0.000 claims description 41
- 229920006254 polymer film Polymers 0.000 claims description 40
- 238000002679 ablation Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000608 laser ablation Methods 0.000 claims description 19
- 239000000696 magnetic material Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 6
- 230000007246 mechanism Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000012145 laser resection Methods 0.000 description 6
- 238000000313 electron-beam-induced deposition Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229920005570 flexible polymer Polymers 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002271 resection Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- -1 carbazole-9-yl Chemical group 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/943—Movable
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/076,174 | 2002-02-14 | ||
| US10/076,174 US6897164B2 (en) | 2002-02-14 | 2002-02-14 | Aperture masks for circuit fabrication |
| PCT/US2003/001877 WO2003069015A2 (en) | 2002-02-14 | 2003-01-21 | Aperture masks for circuit fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040091038A true KR20040091038A (ko) | 2004-10-27 |
Family
ID=27660193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7012545A Withdrawn KR20040091038A (ko) | 2002-02-14 | 2003-01-21 | 회로 제작용 간극 마스크 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6897164B2 (enExample) |
| EP (2) | EP2159303A3 (enExample) |
| JP (1) | JP4490105B2 (enExample) |
| KR (1) | KR20040091038A (enExample) |
| CN (1) | CN100519829C (enExample) |
| AU (1) | AU2003209328A1 (enExample) |
| WO (1) | WO2003069015A2 (enExample) |
Families Citing this family (171)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60126779T2 (de) | 2000-03-24 | 2007-12-13 | Cymbet Corp., Elk River | Herstellung bei niedriger temperatur von dünnschicht- energiespeichervorrichtungen |
| TW558914B (en) * | 2001-08-24 | 2003-10-21 | Dainippon Printing Co Ltd | Multi-face forming mask device for vacuum deposition |
| US6897164B2 (en) * | 2002-02-14 | 2005-05-24 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US20030151118A1 (en) * | 2002-02-14 | 2003-08-14 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US6821348B2 (en) * | 2002-02-14 | 2004-11-23 | 3M Innovative Properties Company | In-line deposition processes for circuit fabrication |
| SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
| US6727125B2 (en) * | 2002-04-17 | 2004-04-27 | Sharp Laboratories Of America, Inc. | Multi-pattern shadow mask system and method for laser annealing |
| US6667215B2 (en) | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
| KR100480705B1 (ko) * | 2002-07-03 | 2005-04-06 | 엘지전자 주식회사 | 유기 ｅｌ 소자 제작용 새도우 마스크 및 그 제조 방법 |
| JP2004183044A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器 |
| JP2004186395A (ja) * | 2002-12-03 | 2004-07-02 | Fujitsu Ltd | セラミック基板の製造方法 |
| US7088145B2 (en) * | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
| US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
| US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
| US7417782B2 (en) | 2005-02-23 | 2008-08-26 | Pixtronix, Incorporated | Methods and apparatus for spatial light modulation |
| US6680521B1 (en) * | 2003-04-09 | 2004-01-20 | Newport Fab, Llc | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies |
| US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
| US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
| US7109519B2 (en) * | 2003-07-15 | 2006-09-19 | 3M Innovative Properties Company | Bis(2-acenyl)acetylene semiconductors |
| US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
| US20050079418A1 (en) * | 2003-10-14 | 2005-04-14 | 3M Innovative Properties Company | In-line deposition processes for thin film battery fabrication |
| US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
| US7153180B2 (en) * | 2003-11-13 | 2006-12-26 | Eastman Kodak Company | Continuous manufacture of flat panel light emitting devices |
| US20050130422A1 (en) * | 2003-12-12 | 2005-06-16 | 3M Innovative Properties Company | Method for patterning films |
| US7078937B2 (en) | 2003-12-17 | 2006-07-18 | 3M Innovative Properties Company | Logic circuitry powered by partially rectified ac waveform |
| CN1957487A (zh) * | 2004-01-06 | 2007-05-02 | Cymbet公司 | 具有一个或者更多个可限定层的层式阻挡物结构和方法 |
| US7223674B2 (en) * | 2004-05-06 | 2007-05-29 | Micron Technology, Inc. | Methods for forming backside alignment markers useable in semiconductor lithography |
| US7399668B2 (en) * | 2004-09-30 | 2008-07-15 | 3M Innovative Properties Company | Method for making electronic devices having a dielectric layer surface treatment |
| US20060086321A1 (en) * | 2004-10-22 | 2006-04-27 | Advantech Global, Ltd | Substrate-to-mask alignment and securing system with temperature control for use in an automated shadow mask vacuum deposition process |
| US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| KR101074389B1 (ko) * | 2004-11-05 | 2011-10-17 | 엘지디스플레이 주식회사 | 박막 식각 방법 및 이를 이용한 액정표시장치의 제조방법 |
| US20060107525A1 (en) * | 2004-11-22 | 2006-05-25 | Hamburgen William R | Method and system for creating alignment holes in a multilayer structure |
| US20060128165A1 (en) * | 2004-12-13 | 2006-06-15 | 3M Innovative Properties Company | Method for patterning surface modification |
| GB0427563D0 (en) * | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
| US7304786B2 (en) | 2005-02-23 | 2007-12-04 | Pixtronix, Inc. | Methods and apparatus for bi-stable actuation of displays |
| US8482496B2 (en) | 2006-01-06 | 2013-07-09 | Pixtronix, Inc. | Circuits for controlling MEMS display apparatus on a transparent substrate |
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-
2002
- 2002-02-14 US US10/076,174 patent/US6897164B2/en not_active Expired - Fee Related
-
2003
- 2003-01-21 EP EP09175050A patent/EP2159303A3/en not_active Withdrawn
- 2003-01-21 JP JP2003568121A patent/JP4490105B2/ja not_active Expired - Fee Related
- 2003-01-21 KR KR10-2004-7012545A patent/KR20040091038A/ko not_active Withdrawn
- 2003-01-21 AU AU2003209328A patent/AU2003209328A1/en not_active Abandoned
- 2003-01-21 EP EP03707482A patent/EP1481111A2/en not_active Withdrawn
- 2003-01-21 WO PCT/US2003/001877 patent/WO2003069015A2/en not_active Ceased
- 2003-01-21 CN CNB038040433A patent/CN100519829C/zh not_active Expired - Fee Related
-
2005
- 2005-04-29 US US11/118,811 patent/US7241688B2/en not_active Expired - Fee Related
-
2007
- 2007-07-09 US US11/775,076 patent/US20080038935A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2159303A3 (en) | 2010-09-29 |
| CN100519829C (zh) | 2009-07-29 |
| US7241688B2 (en) | 2007-07-10 |
| US20030150384A1 (en) | 2003-08-14 |
| AU2003209328A1 (en) | 2003-09-04 |
| AU2003209328A8 (en) | 2003-09-04 |
| EP2159303A2 (en) | 2010-03-03 |
| CN1633518A (zh) | 2005-06-29 |
| JP2005519187A (ja) | 2005-06-30 |
| EP1481111A2 (en) | 2004-12-01 |
| US6897164B2 (en) | 2005-05-24 |
| WO2003069015A3 (en) | 2004-04-01 |
| US20050191572A1 (en) | 2005-09-01 |
| WO2003069015A2 (en) | 2003-08-21 |
| JP4490105B2 (ja) | 2010-06-23 |
| US20080038935A1 (en) | 2008-02-14 |
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