KR20040062417A - 세륨계 연마재 및 그 제조 방법 - Google Patents
세륨계 연마재 및 그 제조 방법 Download PDFInfo
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- KR20040062417A KR20040062417A KR10-2003-7007227A KR20037007227A KR20040062417A KR 20040062417 A KR20040062417 A KR 20040062417A KR 20037007227 A KR20037007227 A KR 20037007227A KR 20040062417 A KR20040062417 A KR 20040062417A
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- South Korea
- Prior art keywords
- rare earth
- cerium
- abrasive
- fluoride
- mixed
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- 229910052684 Cerium Inorganic materials 0.000 title claims abstract description 75
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 123
- -1 rare earth compound Chemical class 0.000 claims abstract description 65
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 238000010304 firing Methods 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 21
- 238000002441 X-ray diffraction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 8
- 239000003082 abrasive agent Substances 0.000 claims description 8
- 239000011164 primary particle Substances 0.000 claims description 7
- 238000001354 calcination Methods 0.000 claims description 5
- 238000010000 carbonizing Methods 0.000 claims description 4
- 238000001238 wet grinding Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 65
- 239000011521 glass Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 27
- 229910000420 cerium oxide Inorganic materials 0.000 description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 150000002910 rare earth metals Chemical class 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000002609 medium Substances 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 3
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 3
- 239000001099 ammonium carbonate Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000012857 radioactive material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 2
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 230000002925 chemical effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 2
- 229910052912 lithium silicate Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 241000220010 Rhode Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000005323 carbonate salts Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000941 radioactive substance Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/253—Halides
- C01F17/265—Fluorides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Cephalosporin Compounds (AREA)
Abstract
Description
평균 입경D50(㎛) | 연마 속도(㎛/분) | 스크래치(수/표면) | 표면 조도 Ra(Å) | |
실시예 1 | 1.54 | 2.55 | 0.17 | 9 |
실시예 2 | 1.46 | 2.68 | 0.08 | 8 |
비교예 1 | 1.55 | 2.23 | 0.50 | 13 |
비교예 2 | 1.63 | 2.12 | 0.83 | 15 |
메인 피크 위치(deg) | 메인 피크 강도 비 | 1차 입경(nm) | 비표면적(m2/g) | |
실시예 1 | 28.5 | 0.52 | 30 | 4 |
실시예 2 | 28.5 | 0.45 | 40 | 3 |
비교예 1 | 28.5 | 0.18 | 80 | 2 |
비교예 2 | 28.1 | 0.30 | 70 | 1.6 |
Claims (11)
- 입방정 복합 희토류 옥사이드와 복합산 희토류 플루오라이드를 포함하는 세륨계 연마재로서, 연마재가 옥사이드로 환산하여 90 질량% 이상의 희토류 원소를 함유하고, 희토류 원소가 옥사이드로 환산하여 55 질량% 이상의 세륨을 함유하는 세륨계 연마재.
- 제 1항에 있어서, 연마재가, X선 회절 측정시 28.2°이상의 2θ에서 입방정 복합 옥사이드에 기인한 메인 피크를 가짐을 특징으로 하는 연마재.
- 제 1항 또는 제 2항에 있어서, 연마재가, X선 회절 측정시 산희토류 플루오라이드에 기인한 메인 피크를 가지며, 입방정 복합 희토류 옥사이드에 기인한 메인 피크에 대한 산희토류 플루오라이드에 기인한 메인 피크의 강도비가 0.2 내지 1.0의 범위내에 존재함을 특징으로 하는 연마재.
- 제 1항 내지 제 3항 중의 어느 한 항에 있어서, 연마재가, 입경이 10 내지 50nm이고 비표면적이 2 내지 10m2/g인 1차 입자를 가짐을 특징으로 하는 연마재.
- 제 1항 내지 제 4항 중의 어느 한 항에 있어서, 연마재가 5 내지 10 질량%의플루오르를 함유함을 특징으로 하는 연마재.
- 희토류 원소를 함유하는 광석으로부터 중간 내지 중량의 희토류 원소, Nd 및 희토류 원소 이외의 불순물을 화학적으로 제거함으로써 수득된 혼합 경희토류 화합물을 500 내지 1100℃에서 소성시켜, 혼합 희토류 옥사이드를 생성하는 것을 포함하는 세륨계 연마재의 제조 방법.
- 제 6항에 있어서, 혼합 희토류 옥사이드에 세륨계 희토류 플루오라이드를 첨가시켜 혼합물을 얻고, 이 혼합물을 습식-분쇄, 건조, 소성, 파쇄 및 분급시킴으로써 세륨계 연마재를 생성하는 것을 추가로 포함함을 특징으로 하는 제조 방법.
- 제 6항에 있어서, 혼합 경희토류 화합물을 탄화시켜 수득된 혼합 희토류 카르보네이트 및 세륨계 희토류 플루오라이드를 혼합 희토류 옥사이드에 첨가시켜 혼합물을 얻고, 이 혼합물을 습식-분쇄, 건조, 소성, 파쇄 및 분급시킴으로써 세륨계 연마재를 생성하는 것을 추가로 포함함을 특징으로 하는 제조 방법.
- 제 7항 또는 제 8항에 있어서, 희토류 플루오라이드가, 혼합 경희토류 화합물에 플루오라이드를 첨가시켜 생성된 혼합물을 400℃ 이하의 온도에서 열처리함으로써 수득된 세륨계 혼합 경희토류 화합물의 플루오라이드임을 특징으로 하는 제조 방법.
- 제 6항 내지 제 9항 중의 어느 한 항에 있어서, 소성이 대기압하에서 2 내지 36시간 동안 소성노를 이용하여 수행됨을 특징으로 하는 제조 방법.
- 제 10항에 있어서, 소성노가 전기노 또는 추진식 노임을 특징으로 하는 제조 방법.
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US60/269,843 | 2001-02-21 | ||
PCT/JP2001/010500 WO2002044300A2 (en) | 2000-11-30 | 2001-11-30 | Cerium-based abrasive and production process thereof |
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US (2) | US6986798B2 (ko) |
EP (1) | EP1346003B1 (ko) |
KR (1) | KR100647023B1 (ko) |
AT (1) | ATE449827T1 (ko) |
AU (1) | AU2002218517A1 (ko) |
DE (1) | DE60140621D1 (ko) |
WO (1) | WO2002044300A2 (ko) |
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US10435587B2 (en) | 2015-07-20 | 2019-10-08 | Samsung Electronics Co., Ltd. | Polishing compositions and methods of manufacturing semiconductor devices using the same |
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-
2001
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- 2001-11-30 AT AT01998610T patent/ATE449827T1/de not_active IP Right Cessation
- 2001-11-30 DE DE60140621T patent/DE60140621D1/de not_active Expired - Lifetime
- 2001-11-30 KR KR1020037007227A patent/KR100647023B1/ko active IP Right Grant
- 2001-11-30 AU AU2002218517A patent/AU2002218517A1/en not_active Abandoned
- 2001-11-30 WO PCT/JP2001/010500 patent/WO2002044300A2/en active Search and Examination
- 2001-11-30 EP EP01998610A patent/EP1346003B1/en not_active Expired - Lifetime
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100638317B1 (ko) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
US10435587B2 (en) | 2015-07-20 | 2019-10-08 | Samsung Electronics Co., Ltd. | Polishing compositions and methods of manufacturing semiconductor devices using the same |
Also Published As
Publication number | Publication date |
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US20050271570A1 (en) | 2005-12-08 |
DE60140621D1 (de) | 2010-01-07 |
WO2002044300A3 (en) | 2002-08-29 |
ATE449827T1 (de) | 2009-12-15 |
US20040043613A1 (en) | 2004-03-04 |
EP1346003A2 (en) | 2003-09-24 |
KR100647023B1 (ko) | 2006-11-17 |
US7470297B2 (en) | 2008-12-30 |
AU2002218517A1 (en) | 2002-06-11 |
US6986798B2 (en) | 2006-01-17 |
WO2002044300A2 (en) | 2002-06-06 |
EP1346003B1 (en) | 2009-11-25 |
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