AU2002218517A1 - Cerium-based abrasive and production process thereof - Google Patents

Cerium-based abrasive and production process thereof

Info

Publication number
AU2002218517A1
AU2002218517A1 AU2002218517A AU1851702A AU2002218517A1 AU 2002218517 A1 AU2002218517 A1 AU 2002218517A1 AU 2002218517 A AU2002218517 A AU 2002218517A AU 1851702 A AU1851702 A AU 1851702A AU 2002218517 A1 AU2002218517 A1 AU 2002218517A1
Authority
AU
Australia
Prior art keywords
rare earth
cerium
mixed
production process
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002218517A
Other languages
English (en)
Inventor
Naoki Bessho
Hideo Tamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of AU2002218517A1 publication Critical patent/AU2002218517A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/253—Halides
    • C01F17/265—Fluorides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Cephalosporin Compounds (AREA)
AU2002218517A 2000-11-30 2001-11-30 Cerium-based abrasive and production process thereof Abandoned AU2002218517A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-365600 2000-11-30
JP2000365600 2000-11-30
US26984301P 2001-02-21 2001-02-21
US60/269,843 2001-02-21
PCT/JP2001/010500 WO2002044300A2 (en) 2000-11-30 2001-11-30 Cerium-based abrasive and production process thereof

Publications (1)

Publication Number Publication Date
AU2002218517A1 true AU2002218517A1 (en) 2002-06-11

Family

ID=26604984

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002218517A Abandoned AU2002218517A1 (en) 2000-11-30 2001-11-30 Cerium-based abrasive and production process thereof

Country Status (7)

Country Link
US (2) US6986798B2 (ko)
EP (1) EP1346003B1 (ko)
KR (1) KR100647023B1 (ko)
AT (1) ATE449827T1 (ko)
AU (1) AU2002218517A1 (ko)
DE (1) DE60140621D1 (ko)
WO (1) WO2002044300A2 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY126099A (en) * 2000-09-20 2006-09-29 Mitsui Mining & Smelting Co Cerium-based abrasive, method of examining quality thereof, and method of producing the same
JP4002740B2 (ja) * 2001-05-29 2007-11-07 三井金属鉱業株式会社 セリウム系研摩材の製造方法
JP4236857B2 (ja) * 2002-03-22 2009-03-11 三井金属鉱業株式会社 セリウム系研摩材およびその製造方法
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
US20100187178A1 (en) * 2003-01-29 2010-07-29 Molycorp Minerals, Llc Process for removing and sequestering contaminants from aqueous streams
JP3875668B2 (ja) * 2003-08-26 2007-01-31 三井金属鉱業株式会社 フッ素を含有するセリウム系研摩材およびその製造方法
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
JP3949147B2 (ja) * 2004-09-03 2007-07-25 昭和電工株式会社 混合希土類酸化物、混合希土類フッ素化物及びそれらを用いたセリウム系研磨材、並びにそれらの製造方法
KR20060066799A (ko) * 2004-12-14 2006-06-19 한국기초과학지원연구원 연속 ｘ-선을 이용한 다 차수 반사율 동시 측정방법 및측정 장치
JP3929481B2 (ja) * 2005-04-04 2007-06-13 昭和電工株式会社 酸化セリウム系研磨材、その製造方法及び用途
US8066874B2 (en) * 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
US8252087B2 (en) * 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
US20090107919A1 (en) * 2007-10-31 2009-04-30 Chevron U.S.A. Inc. Apparatus and process for treating an aqueous solution containing chemical contaminants
TW201038510A (en) * 2009-03-16 2010-11-01 Molycorp Minerals Llc Porous and durable ceramic filter monolith coated with a rare earth for removing contaminates from water
EA201171231A1 (ru) * 2009-04-09 2012-05-30 МОЛИКОРП МИНЕРАЛЗ, ЭлЭлСи Использование редкоземельного элемента для удаления сурьмы и висмута
KR101376057B1 (ko) * 2009-04-15 2014-03-19 솔베이 (차이나) 컴퍼니, 리미티드 세륨 기반 입자 조성물 및 그의 제조
WO2011057281A1 (en) * 2009-11-09 2011-05-12 Molycorp Minerals Llc Rare earth removal of colorants
US9233863B2 (en) 2011-04-13 2016-01-12 Molycorp Minerals, Llc Rare earth removal of hydrated and hydroxyl species
CN102585707B (zh) * 2012-02-28 2014-01-29 上海华明高纳稀土新材料有限公司 铈基混合稀土抛光粉的制备方法
JP2015120844A (ja) * 2013-12-24 2015-07-02 旭硝子株式会社 研磨剤の製造方法、研磨方法および半導体集積回路装置の製造方法
EP3113859A4 (en) 2014-03-07 2017-10-04 Secure Natural Resources LLC Cerium (iv) oxide with exceptional arsenic removal properties
CN104194646B (zh) * 2014-09-02 2016-09-28 包头市金蒙研磨材料有限责任公司 一种稀土铈基抛光浆生产方法
KR102463863B1 (ko) 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
CN113772713A (zh) * 2021-08-26 2021-12-10 北京工业大学 一种氟化稀土镧铈抛光粉体的焙烧制备方法

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SU1249045A1 (ru) * 1984-11-02 1986-08-07 Предприятие П/Я Р-6670 Способ получени суспензии дл полировани оптического стекла
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JPH0848969A (ja) * 1994-08-09 1996-02-20 Mitsui Mining & Smelting Co Ltd 研磨材
JPH09183966A (ja) 1995-12-29 1997-07-15 Seimi Chem Co Ltd セリウム研摩材の製造方法
JP3602670B2 (ja) * 1996-12-25 2004-12-15 セイミケミカル株式会社 セリウム系研磨材の製造方法
JP3600725B2 (ja) * 1998-03-24 2004-12-15 三井金属鉱業株式会社 セリウム系研摩材の製造方法
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JP2000303060A (ja) * 1999-04-19 2000-10-31 Seimi Chem Co Ltd フッ素化合物砥粒を含む半導体用研磨剤
MY126099A (en) * 2000-09-20 2006-09-29 Mitsui Mining & Smelting Co Cerium-based abrasive, method of examining quality thereof, and method of producing the same
JP3392398B2 (ja) 2000-09-20 2003-03-31 三井金属鉱業株式会社 セリウム系研摩材、その品質検査方法および製造方法

Also Published As

Publication number Publication date
WO2002044300A2 (en) 2002-06-06
US6986798B2 (en) 2006-01-17
US7470297B2 (en) 2008-12-30
DE60140621D1 (de) 2010-01-07
KR100647023B1 (ko) 2006-11-17
US20040043613A1 (en) 2004-03-04
US20050271570A1 (en) 2005-12-08
ATE449827T1 (de) 2009-12-15
WO2002044300A3 (en) 2002-08-29
EP1346003A2 (en) 2003-09-24
EP1346003B1 (en) 2009-11-25
KR20040062417A (ko) 2004-07-07

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