KR20040005866A - 전기도금층의 두께 균일성을 조절하는 방법과 장치 - Google Patents

전기도금층의 두께 균일성을 조절하는 방법과 장치 Download PDF

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Publication number
KR20040005866A
KR20040005866A KR10-2003-7008507A KR20037008507A KR20040005866A KR 20040005866 A KR20040005866 A KR 20040005866A KR 20037008507 A KR20037008507 A KR 20037008507A KR 20040005866 A KR20040005866 A KR 20040005866A
Authority
KR
South Korea
Prior art keywords
conductive
conductive element
mask
deposition
electrolyte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-7008507A
Other languages
English (en)
Korean (ko)
Inventor
바솔버렌트엠
린드퀴스트폴
Original Assignee
누툴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 누툴 인코포레이티드 filed Critical 누툴 인코포레이티드
Publication of KR20040005866A publication Critical patent/KR20040005866A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/07—Current distribution within the bath

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-7008507A 2000-12-21 2001-12-11 전기도금층의 두께 균일성을 조절하는 방법과 장치 Withdrawn KR20040005866A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25692400P 2000-12-21 2000-12-21
US60/256,924 2000-12-21
US09/855,059 US6802946B2 (en) 2000-12-21 2001-05-15 Apparatus for controlling thickness uniformity of electroplated and electroetched layers
US09/855,059 2001-05-15
PCT/US2001/047445 WO2002063072A1 (en) 2000-12-21 2001-12-11 Method and apparatus for controlling thickness uniformity of electroplated layer

Publications (1)

Publication Number Publication Date
KR20040005866A true KR20040005866A (ko) 2004-01-16

Family

ID=26945682

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7008507A Withdrawn KR20040005866A (ko) 2000-12-21 2001-12-11 전기도금층의 두께 균일성을 조절하는 방법과 장치

Country Status (7)

Country Link
US (2) US6802946B2 (https=)
EP (1) EP1360348A4 (https=)
JP (1) JP2004518817A (https=)
KR (1) KR20040005866A (https=)
CN (1) CN1551931A (https=)
TW (1) TW539778B (https=)
WO (1) WO2002063072A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755661B1 (ko) * 2005-03-07 2007-09-05 삼성전자주식회사 도금 처리 장치 및 이를 이용한 도금 처리 방법
KR20160009571A (ko) * 2013-05-20 2016-01-26 도쿄엘렉트론가부시키가이샤 기판의 처리 방법 및 템플릿

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69929967T2 (de) 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US20030168344A1 (en) * 2002-03-08 2003-09-11 Applied Materials, Inc. Selective metal deposition for electrochemical plating
US20040262150A1 (en) * 2002-07-18 2004-12-30 Toshikazu Yajima Plating device
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040055873A1 (en) * 2002-09-24 2004-03-25 Digital Matrix Corporation Apparatus and method for improved electroforming
US6890413B2 (en) * 2002-12-11 2005-05-10 International Business Machines Corporation Method and apparatus for controlling local current to achieve uniform plating thickness
US6966976B1 (en) 2003-01-07 2005-11-22 Hutchinson Technology Incorporated Electroplating panel with plating thickness-compensation structures
US7201828B2 (en) * 2003-02-25 2007-04-10 Novellus Systems, Inc. Planar plating apparatus
KR20040094560A (ko) * 2003-05-03 2004-11-10 삼성전자주식회사 반도체 소자 금속배선층의 전해 연마 방법 및 장치
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7803257B2 (en) * 2004-10-22 2010-09-28 Taiwan Semiconductor Manufacturing Company Current-leveling electroplating/electropolishing electrode
TW200641189A (en) * 2005-02-25 2006-12-01 Applied Materials Inc Counter electrode encased in cation exchange membrane tube for electroplating cell
CN101368284B (zh) * 2007-08-15 2010-10-06 富葵精密组件(深圳)有限公司 电镀装置
US8197660B2 (en) 2007-09-10 2012-06-12 Infineon Technologies Ag Electro chemical deposition systems and methods of manufacturing using the same
US8309259B2 (en) 2008-05-19 2012-11-13 Arizona Board Of Regents For And On Behalf Of Arizona State University Electrochemical cell, and particularly a cell with electrodeposited fuel
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
AU2010303211B2 (en) 2009-10-08 2014-06-12 Fluidic, Inc. Rechargeable metal-air cell with flow management system
US8343327B2 (en) 2010-05-25 2013-01-01 Reel Solar, Inc. Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells
US9960312B2 (en) 2010-05-25 2018-05-01 Kurt H. Weiner Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells
WO2011151530A1 (fr) * 2010-05-31 2011-12-08 Arcelormittal Investigacion Y Desarrollo, S.L. Procede et dispositif de mesure de l'epaisseur d'une couche de revetement sur une bande en defilement
EP2586092B1 (en) 2010-06-24 2017-01-04 Fluidic, Inc. Electrochemical cell with stepped scaffold fuel anode
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US8795480B2 (en) * 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
CN102403525B (zh) 2010-09-16 2016-02-03 流体公司 具有渐进析氧电极/燃料电极的电化学电池系统
CN102456934B (zh) 2010-10-20 2016-01-20 流体公司 针对基架燃料电极的电池重置过程
JP5908251B2 (ja) 2010-11-17 2016-04-26 フルイディック，インク．Ｆｌｕｉｄｉｃ，Ｉｎｃ． 階層型アノードのマルチモード充電
EP2476784A1 (en) * 2011-01-18 2012-07-18 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method for manufacturing an electronic device by electrodeposition from an ionic liquid
JP5731917B2 (ja) * 2011-06-30 2015-06-10 上村工業株式会社 表面処理装置およびめっき槽
CN102703961A (zh) * 2012-06-08 2012-10-03 镇江华印电路板有限公司 一种电镀均匀性改善的方法
US9909228B2 (en) * 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
WO2016073658A1 (en) 2014-11-05 2016-05-12 Corning Incorporated Bottom-up electrolytic via plating method
CN104313657A (zh) * 2014-11-10 2015-01-28 临安振有电子有限公司 Hdi印制线路板通孔的电沉积装置
JP6107799B2 (ja) * 2014-12-03 2017-04-05 トヨタ自動車株式会社 表面処理方法および表面処理装置
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US11228066B2 (en) 2016-07-22 2022-01-18 Form Energy, Inc. Mist elimination system for electrochemical cells
JP2019521497A (ja) 2016-07-22 2019-07-25 ナントエナジー，インク． 電気化学セル内の水分及び二酸化炭素管理システム
JP2019530405A (ja) 2016-09-15 2019-10-17 ナントエナジー，インク． ハイブリッド型バッテリシステム
BR112019008041A2 (pt) 2016-10-21 2019-07-02 Nantenergy Inc elétrodo de combustível corrugado
US10692735B2 (en) * 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
CN119481486A (zh) 2018-06-29 2025-02-18 福恩能源公司 滚动膜片密封件
CN112805868A (zh) 2018-06-29 2021-05-14 福恩能源公司 金属空气电化学电池构架
TWI700401B (zh) 2018-08-21 2020-08-01 財團法人工業技術研究院 待電鍍的面板、使用其之電鍍製程、及以其製造之晶片
CN109652826A (zh) * 2019-02-22 2019-04-19 圣达电气有限公司 阴极辊的电解铜箔厚度均匀性控制方法
WO2020231718A1 (en) 2019-05-10 2020-11-19 Nantenergy, Inc. Nested annular metal-air cell and systems containing same
CN114207915A (zh) 2019-06-28 2022-03-18 福恩能源公司 金属-空气电池组的设备架构
IT201900013626A1 (it) 2019-08-01 2021-02-01 Fluid Metal 3D As Procedimento e sistema di elettroformatura localizzata da getti con retroazione ad anello chiuso in tempo reale
WO2021226399A1 (en) 2020-05-06 2021-11-11 Form Energy, Inc. Decoupled electrode electrochemical energy storage system
CN113265695A (zh) * 2021-05-18 2021-08-17 南京萨特科技发展有限公司 合金箔电阻器挂镀治具及方法
TWI801144B (zh) * 2021-10-14 2023-05-01 欣興電子股份有限公司 電鍍設備與電鍍方法

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328273A (en) 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
FR2510145B1 (fr) 1981-07-24 1986-02-07 Rhone Poulenc Spec Chim Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes
US4643816A (en) * 1985-05-09 1987-02-17 Burlington Industries, Inc. Plating using a non-conductive shroud and a false bottom
US4678545A (en) * 1986-06-12 1987-07-07 Galik George M Printed circuit board fine line plating
US4948474A (en) 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
DE3836521C2 (de) 1988-10-24 1995-04-13 Atotech Deutschland Gmbh Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5256565A (en) 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
JPH04143299A (ja) * 1990-10-03 1992-05-18 Fujitsu Ltd 電解メッキ方法
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5421987A (en) * 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US6042712A (en) 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
US5681215A (en) 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5795215A (en) 1995-06-09 1998-08-18 Applied Materials, Inc. Method and apparatus for using a retaining ring to control the edge effect
EP0751567B1 (en) 1995-06-27 2007-11-28 International Business Machines Corporation Copper alloys for chip interconnections and method of making
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US5762544A (en) 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5620581A (en) 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6051117A (en) * 1996-12-12 2000-04-18 Eltech Systems, Corp. Reticulated metal article combining small pores with large apertures
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5933753A (en) 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US5930669A (en) 1997-04-03 1999-07-27 International Business Machines Corporation Continuous highly conductive metal wiring structures and method for fabricating the same
US5922091A (en) 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6132583A (en) * 1997-05-16 2000-10-17 Technic, Inc. Shielding method and apparatus for use in electroplating process
US5985123A (en) 1997-07-09 1999-11-16 Koon; Kam Kwan Continuous vertical plating system and method of plating
US6004440A (en) * 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6106687A (en) 1998-04-28 2000-08-22 International Business Machines Corporation Process and diffusion baffle to modulate the cross sectional distribution of flow rate and deposition rate
US6071388A (en) 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6074544A (en) 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6132587A (en) 1998-10-19 2000-10-17 Jorne; Jacob Uniform electroplating of wafers
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6251251B1 (en) 1998-11-16 2001-06-26 International Business Machines Corporation Anode design for semiconductor deposition
US6103085A (en) 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6297155B1 (en) 1999-05-03 2001-10-02 Motorola Inc. Method for forming a copper layer over a semiconductor wafer
US6197182B1 (en) 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6231743B1 (en) * 2000-01-03 2001-05-15 Motorola, Inc. Method for forming a semiconductor device
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755661B1 (ko) * 2005-03-07 2007-09-05 삼성전자주식회사 도금 처리 장치 및 이를 이용한 도금 처리 방법
KR20160009571A (ko) * 2013-05-20 2016-01-26 도쿄엘렉트론가부시키가이샤 기판의 처리 방법 및 템플릿

Also Published As

Publication number Publication date
CN1551931A (zh) 2004-12-01
EP1360348A1 (en) 2003-11-12
US7435323B2 (en) 2008-10-14
US20040231994A1 (en) 2004-11-25
US6802946B2 (en) 2004-10-12
JP2004518817A (ja) 2004-06-24
TW539778B (en) 2003-07-01
EP1360348A4 (en) 2006-09-27
US20020079230A1 (en) 2002-06-27
WO2002063072A1 (en) 2002-08-15

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Date Code Title Description
PA0105 International application

Patent event date: 20030621

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid