JP2004518817A - 電気めっき層の厚さの均一性を制御する方法及び装置 - Google Patents

電気めっき層の厚さの均一性を制御する方法及び装置 Download PDF

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Publication number
JP2004518817A
JP2004518817A JP2002562802A JP2002562802A JP2004518817A JP 2004518817 A JP2004518817 A JP 2004518817A JP 2002562802 A JP2002562802 A JP 2002562802A JP 2002562802 A JP2002562802 A JP 2002562802A JP 2004518817 A JP2004518817 A JP 2004518817A
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JP
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Prior art keywords
conductive element
conductive
mask
electrical isolation
anode
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Abandoned
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JP2002562802A
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English (en)
Japanese (ja)
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JP2004518817A5 (https=
Inventor
ビュレント エム ベイゾル
ポール リンドクィスト
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エヌユー トゥール インコーポレイテッド
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Application filed by エヌユー トゥール インコーポレイテッド filed Critical エヌユー トゥール インコーポレイテッド
Publication of JP2004518817A publication Critical patent/JP2004518817A/ja
Publication of JP2004518817A5 publication Critical patent/JP2004518817A5/ja
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/07—Current distribution within the bath

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002562802A 2000-12-21 2001-12-11 電気めっき層の厚さの均一性を制御する方法及び装置 Abandoned JP2004518817A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25692400P 2000-12-21 2000-12-21
US09/855,059 US6802946B2 (en) 2000-12-21 2001-05-15 Apparatus for controlling thickness uniformity of electroplated and electroetched layers
PCT/US2001/047445 WO2002063072A1 (en) 2000-12-21 2001-12-11 Method and apparatus for controlling thickness uniformity of electroplated layer

Publications (2)

Publication Number Publication Date
JP2004518817A true JP2004518817A (ja) 2004-06-24
JP2004518817A5 JP2004518817A5 (https=) 2005-06-09

Family

ID=26945682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002562802A Abandoned JP2004518817A (ja) 2000-12-21 2001-12-11 電気めっき層の厚さの均一性を制御する方法及び装置

Country Status (7)

Country Link
US (2) US6802946B2 (https=)
EP (1) EP1360348A4 (https=)
JP (1) JP2004518817A (https=)
KR (1) KR20040005866A (https=)
CN (1) CN1551931A (https=)
TW (1) TW539778B (https=)
WO (1) WO2002063072A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014111831A (ja) * 2012-11-27 2014-06-19 Lam Research Corporation 電気めっき中の動的な電流分布制御のための方法および装置
JP2016106217A (ja) * 2010-05-31 2016-06-16 アルセロルミタル・インベステイガシオン・イ・デサロジヨ・エセ・エレ 流れる条片の塗膜層の厚さを測定する方法及び装置
US10017869B2 (en) 2008-11-07 2018-07-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0991795B1 (en) 1998-04-21 2006-02-22 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US20030168344A1 (en) * 2002-03-08 2003-09-11 Applied Materials, Inc. Selective metal deposition for electrochemical plating
CN100439571C (zh) * 2002-07-18 2008-12-03 株式会社荏原制作所 电镀装置
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040055873A1 (en) * 2002-09-24 2004-03-25 Digital Matrix Corporation Apparatus and method for improved electroforming
US6890413B2 (en) * 2002-12-11 2005-05-10 International Business Machines Corporation Method and apparatus for controlling local current to achieve uniform plating thickness
US6966976B1 (en) 2003-01-07 2005-11-22 Hutchinson Technology Incorporated Electroplating panel with plating thickness-compensation structures
US7201828B2 (en) * 2003-02-25 2007-04-10 Novellus Systems, Inc. Planar plating apparatus
KR20040094560A (ko) * 2003-05-03 2004-11-10 삼성전자주식회사 반도체 소자 금속배선층의 전해 연마 방법 및 장치
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7803257B2 (en) * 2004-10-22 2010-09-28 Taiwan Semiconductor Manufacturing Company Current-leveling electroplating/electropolishing electrode
TW200641189A (en) * 2005-02-25 2006-12-01 Applied Materials Inc Counter electrode encased in cation exchange membrane tube for electroplating cell
KR100755661B1 (ko) * 2005-03-07 2007-09-05 삼성전자주식회사 도금 처리 장치 및 이를 이용한 도금 처리 방법
CN101368284B (zh) * 2007-08-15 2010-10-06 富葵精密组件(深圳)有限公司 电镀装置
US8197660B2 (en) * 2007-09-10 2012-06-12 Infineon Technologies Ag Electro chemical deposition systems and methods of manufacturing using the same
US8309259B2 (en) 2008-05-19 2012-11-13 Arizona Board Of Regents For And On Behalf Of Arizona State University Electrochemical cell, and particularly a cell with electrodeposited fuel
MX2012004237A (es) 2009-10-08 2012-10-03 Fluidic Inc Celda metalica-aire recargable con sistema de manejo de flujo.
US9960312B2 (en) * 2010-05-25 2018-05-01 Kurt H. Weiner Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells
US8343327B2 (en) 2010-05-25 2013-01-01 Reel Solar, Inc. Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells
CN102544638B (zh) 2010-06-24 2015-07-15 流体股份有限公司 具有阶梯形支架燃料阳极的电化学电池
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US8795480B2 (en) * 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
CN105206789B (zh) 2010-09-16 2018-09-07 流体公司 具有渐进析氧电极/燃料电极的电化学电池系统
ES2549592T3 (es) 2010-10-20 2015-10-29 Fluidic, Inc. Procesos de reinicio de batería para electrodo de combustible en armazón
JP5908251B2 (ja) 2010-11-17 2016-04-26 フルイディック，インク．Ｆｌｕｉｄｉｃ，Ｉｎｃ． 階層型アノードのマルチモード充電
EP2476784A1 (en) * 2011-01-18 2012-07-18 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method for manufacturing an electronic device by electrodeposition from an ionic liquid
JP5731917B2 (ja) * 2011-06-30 2015-06-10 上村工業株式会社 表面処理装置およびめっき槽
CN102703961A (zh) * 2012-06-08 2012-10-03 镇江华印电路板有限公司 一种电镀均匀性改善的方法
JP6198456B2 (ja) * 2013-05-20 2017-09-20 東京エレクトロン株式会社 基板の処理方法及びテンプレート
KR102382054B1 (ko) 2014-11-05 2022-04-01 코닝 인코포레이티드 상향식 전해 도금 방법
CN104313657A (zh) * 2014-11-10 2015-01-28 临安振有电子有限公司 Hdi印制线路板通孔的电沉积装置
JP6107799B2 (ja) * 2014-12-03 2017-04-05 トヨタ自動車株式会社 表面処理方法および表面処理装置
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
MX2019000905A (es) 2016-07-22 2019-10-02 Nantenergy Inc Sistema de eliminacion de neblina para celdas electroquimicas.
CN109478643B (zh) 2016-07-22 2022-03-15 南特能源公司 电化学电池中的水分和二氧化碳管理系统
EP3513477B8 (en) 2016-09-15 2021-05-26 Form Energy, Inc. Hybrid battery system
AU2017345601B2 (en) 2016-10-21 2020-01-02 Nantenergy, Inc. Corrugated fuel electrode
US10692735B2 (en) * 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
CN119481486A (zh) 2018-06-29 2025-02-18 福恩能源公司 滚动膜片密封件
CN120184457A (zh) 2018-06-29 2025-06-20 福恩能源公司 金属空气电化学电池构架
TWI700401B (zh) * 2018-08-21 2020-08-01 財團法人工業技術研究院 待電鍍的面板、使用其之電鍍製程、及以其製造之晶片
CN109652826A (zh) * 2019-02-22 2019-04-19 圣达电气有限公司 阴极辊的电解铜箔厚度均匀性控制方法
WO2020231718A1 (en) 2019-05-10 2020-11-19 Nantenergy, Inc. Nested annular metal-air cell and systems containing same
WO2020264344A1 (en) 2019-06-28 2020-12-30 Form Energy Inc. Device architectures for metal-air batteries
IT201900013626A1 (it) 2019-08-01 2021-02-01 Fluid Metal 3D As Procedimento e sistema di elettroformatura localizzata da getti con retroazione ad anello chiuso in tempo reale
EP4147296A4 (en) 2020-05-06 2025-08-13 Form Energy Inc ELECTROCHEMICAL ENERGY STORAGE SYSTEM WITH DECOUPLED ELECTRODE
CN113265695A (zh) * 2021-05-18 2021-08-17 南京萨特科技发展有限公司 合金箔电阻器挂镀治具及方法
TWI801144B (zh) * 2021-10-14 2023-05-01 欣興電子股份有限公司 電鍍設備與電鍍方法

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328273A (en) 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
FR2510145B1 (fr) 1981-07-24 1986-02-07 Rhone Poulenc Spec Chim Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes
US4643816A (en) * 1985-05-09 1987-02-17 Burlington Industries, Inc. Plating using a non-conductive shroud and a false bottom
US4678545A (en) * 1986-06-12 1987-07-07 Galik George M Printed circuit board fine line plating
US4948474A (en) 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
DE3836521C2 (de) 1988-10-24 1995-04-13 Atotech Deutschland Gmbh Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5256565A (en) 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
JPH04143299A (ja) * 1990-10-03 1992-05-18 Fujitsu Ltd 電解メッキ方法
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5421987A (en) * 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US6042712A (en) 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
US5681215A (en) 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5795215A (en) 1995-06-09 1998-08-18 Applied Materials, Inc. Method and apparatus for using a retaining ring to control the edge effect
DE69637333T2 (de) 1995-06-27 2008-10-02 International Business Machines Corp. Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US5762544A (en) 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5620581A (en) 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6051117A (en) * 1996-12-12 2000-04-18 Eltech Systems, Corp. Reticulated metal article combining small pores with large apertures
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5933753A (en) 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5930669A (en) 1997-04-03 1999-07-27 International Business Machines Corporation Continuous highly conductive metal wiring structures and method for fabricating the same
US5922091A (en) 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6132583A (en) * 1997-05-16 2000-10-17 Technic, Inc. Shielding method and apparatus for use in electroplating process
US5985123A (en) 1997-07-09 1999-11-16 Koon; Kam Kwan Continuous vertical plating system and method of plating
US6004440A (en) 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6106687A (en) 1998-04-28 2000-08-22 International Business Machines Corporation Process and diffusion baffle to modulate the cross sectional distribution of flow rate and deposition rate
US6071388A (en) 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6074544A (en) 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6132587A (en) 1998-10-19 2000-10-17 Jorne; Jacob Uniform electroplating of wafers
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6251251B1 (en) 1998-11-16 2001-06-26 International Business Machines Corporation Anode design for semiconductor deposition
US6103085A (en) 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6297155B1 (en) 1999-05-03 2001-10-02 Motorola Inc. Method for forming a copper layer over a semiconductor wafer
US6197182B1 (en) 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6231743B1 (en) * 2000-01-03 2001-05-15 Motorola, Inc. Method for forming a semiconductor device
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10017869B2 (en) 2008-11-07 2018-07-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US10920335B2 (en) 2008-11-07 2021-02-16 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US11549192B2 (en) 2008-11-07 2023-01-10 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
JP2016106217A (ja) * 2010-05-31 2016-06-16 アルセロルミタル・インベステイガシオン・イ・デサロジヨ・エセ・エレ 流れる条片の塗膜層の厚さを測定する方法及び装置
US10203194B2 (en) 2010-05-31 2019-02-12 Arcelormittal Investigacion Y Desarrollo, S.L. Method and device for measuring the thickness of a coating layer on a running strip
JP2014111831A (ja) * 2012-11-27 2014-06-19 Lam Research Corporation 電気めっき中の動的な電流分布制御のための方法および装置
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating

Also Published As

Publication number Publication date
TW539778B (en) 2003-07-01
EP1360348A4 (en) 2006-09-27
CN1551931A (zh) 2004-12-01
WO2002063072A1 (en) 2002-08-15
EP1360348A1 (en) 2003-11-12
US20020079230A1 (en) 2002-06-27
US6802946B2 (en) 2004-10-12
US20040231994A1 (en) 2004-11-25
US7435323B2 (en) 2008-10-14
KR20040005866A (ko) 2004-01-16

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