KR20030026872A - 가속도 센서 - Google Patents
가속도 센서 Download PDFInfo
- Publication number
- KR20030026872A KR20030026872A KR1020020057700A KR20020057700A KR20030026872A KR 20030026872 A KR20030026872 A KR 20030026872A KR 1020020057700 A KR1020020057700 A KR 1020020057700A KR 20020057700 A KR20020057700 A KR 20020057700A KR 20030026872 A KR20030026872 A KR 20030026872A
- Authority
- KR
- South Korea
- Prior art keywords
- elastic support
- acceleration sensor
- support arms
- mass part
- acceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 31
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000736305 Marsilea quadrifolia Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/05—Type of movement
- B81B2203/053—Translation according to an axis perpendicular to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/05—Type of movement
- B81B2203/058—Rotation out of a plane parallel to the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001293526 | 2001-09-26 | ||
| JPJP-P-2001-00293526 | 2001-09-26 | ||
| JP2001363371A JP2003172745A (ja) | 2001-09-26 | 2001-11-28 | 半導体加速度センサ |
| JPJP-P-2001-00363371 | 2001-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030026872A true KR20030026872A (ko) | 2003-04-03 |
Family
ID=26622909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020057700A Withdrawn KR20030026872A (ko) | 2001-09-26 | 2002-09-24 | 가속도 센서 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20030057447A1 (enExample) |
| EP (1) | EP1298442A1 (enExample) |
| JP (1) | JP2003172745A (enExample) |
| KR (1) | KR20030026872A (enExample) |
| CN (1) | CN1409118A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1491901A1 (en) * | 2003-06-25 | 2004-12-29 | Matsushita Electric Works, Ltd. | Semiconductor acceleration sensor and method of manufacturing the same |
| JP4416460B2 (ja) * | 2003-09-16 | 2010-02-17 | トレックス・セミコンダクター株式会社 | 加速度センサー |
| JP2006214743A (ja) * | 2005-02-01 | 2006-08-17 | Matsushita Electric Works Ltd | 半導体加速度センサ |
| JP2006275896A (ja) * | 2005-03-30 | 2006-10-12 | Yokohama Rubber Co Ltd:The | 半導体加速度センサ |
| JP4747677B2 (ja) * | 2005-05-27 | 2011-08-17 | 大日本印刷株式会社 | 角速度センサの製造方法 |
| JP4832802B2 (ja) * | 2005-05-30 | 2011-12-07 | Ｏｋｉセミコンダクタ株式会社 | 半導体加速度センサ装置及びその製造方法 |
| ITTO20070033A1 (it) * | 2007-01-19 | 2008-07-20 | St Microelectronics Srl | Dispositivo microelettromeccanico ad asse z con struttura di arresto perfezionata |
| JP4838229B2 (ja) | 2007-07-27 | 2011-12-14 | トレックス・セミコンダクター株式会社 | 加速度センサー |
| JP5652775B2 (ja) | 2009-05-29 | 2015-01-14 | トレックス・セミコンダクター株式会社 | 加速度センサー素子およびこれを有する加速度センサー |
| CN102967729A (zh) * | 2012-09-18 | 2013-03-13 | 华东光电集成器件研究所 | 一种压阻式mems加速度计 |
| TWI506278B (zh) * | 2012-12-06 | 2015-11-01 | Murata Manufacturing Co | High Voltage Resistive MEMS Sensors |
| JP6294463B2 (ja) | 2014-03-20 | 2018-03-14 | 京セラ株式会社 | センサ |
| CN107211223B (zh) | 2015-01-26 | 2020-04-03 | 思睿逻辑国际半导体有限公司 | Mems换能器 |
| CN105021846B (zh) * | 2015-07-06 | 2018-04-17 | 西安交通大学 | 一种六轴一体式微加速度传感器及其制作方法 |
| CN107963095B (zh) * | 2017-11-23 | 2020-06-02 | 交控科技股份有限公司 | 车轮速度传感器、检测装置及车轴状态检测方法 |
| CN113366321A (zh) * | 2019-09-05 | 2021-09-07 | 深圳市柔宇科技股份有限公司 | 加速度传感器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2940293B2 (ja) * | 1992-03-31 | 1999-08-25 | 日産自動車株式会社 | 半導体加速度センサの製造方法 |
| DE69330980T2 (de) * | 1992-04-22 | 2002-07-11 | Denso Corp | Verfahren zur Herstellung einer Halbleiteranordnung |
| JP2776142B2 (ja) * | 1992-05-15 | 1998-07-16 | 株式会社日立製作所 | 加速度センサ |
| JPH06148229A (ja) * | 1992-11-04 | 1994-05-27 | Fujikura Ltd | 半導体加速度センサ |
| JP2639308B2 (ja) * | 1992-11-19 | 1997-08-13 | 富士電機株式会社 | 力センサ，温度センサおよび温度・力センサ装置 |
| JPH08107219A (ja) * | 1994-10-04 | 1996-04-23 | Seiko Instr Inc | 半導体加速度センサ及び半導体加速度センサの製造方法 |
| JP3305516B2 (ja) * | 1994-10-31 | 2002-07-22 | 株式会社東海理化電機製作所 | 静電容量式加速度センサ及びその製造方法 |
| FR2742230B1 (fr) * | 1995-12-12 | 1998-01-09 | Sextant Avionique | Accelerometre et procede de fabrication |
| US5894090A (en) * | 1996-05-31 | 1999-04-13 | California Institute Of Technology | Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same |
| CA2251957C (en) * | 1997-02-21 | 2003-07-01 | Matsushita Electric Works, Ltd. | Acceleration sensor element and method of its manufacture |
| US6196067B1 (en) * | 1998-05-05 | 2001-03-06 | California Institute Of Technology | Silicon micromachined accelerometer/seismometer and method of making the same |
-
2001
- 2001-11-28 JP JP2001363371A patent/JP2003172745A/ja active Pending
-
2002
- 2002-09-16 US US10/243,650 patent/US20030057447A1/en not_active Abandoned
- 2002-09-18 EP EP02021223A patent/EP1298442A1/en not_active Withdrawn
- 2002-09-24 KR KR1020020057700A patent/KR20030026872A/ko not_active Withdrawn
- 2002-09-26 CN CN02143502A patent/CN1409118A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003172745A (ja) | 2003-06-20 |
| US20030057447A1 (en) | 2003-03-27 |
| CN1409118A (zh) | 2003-04-09 |
| EP1298442A1 (en) | 2003-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20020924 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |