KR20020095037A - 폐자로 자구 제어막을 포함하는 스핀 밸브 헤드 - Google Patents
폐자로 자구 제어막을 포함하는 스핀 밸브 헤드 Download PDFInfo
- Publication number
- KR20020095037A KR20020095037A KR1020020009042A KR20020009042A KR20020095037A KR 20020095037 A KR20020095037 A KR 20020095037A KR 1020020009042 A KR1020020009042 A KR 1020020009042A KR 20020009042 A KR20020009042 A KR 20020009042A KR 20020095037 A KR20020095037 A KR 20020095037A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- ferromagnetic
- film
- magnetization
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 627
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 330
- 230000005415 magnetization Effects 0.000 claims abstract description 259
- 230000008878 coupling Effects 0.000 claims abstract description 94
- 238000010168 coupling process Methods 0.000 claims abstract description 94
- 238000005859 coupling reaction Methods 0.000 claims abstract description 94
- 238000000926 separation method Methods 0.000 claims abstract description 87
- 230000000694 effects Effects 0.000 claims description 115
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 51
- 230000008859 change Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 235000002595 Solanum tuberosum Nutrition 0.000 claims description 10
- 244000061456 Solanum tuberosum Species 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 210000004072 lung Anatomy 0.000 claims 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 705
- 239000010408 film Substances 0.000 description 419
- 230000001681 protective effect Effects 0.000 description 41
- 230000005381 magnetic domain Effects 0.000 description 27
- 229910003321 CoFe Inorganic materials 0.000 description 26
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 19
- 238000004364 calculation method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 238000003475 lamination Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 14
- 239000002356 single layer Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 238000010030 laminating Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 11
- 239000000696 magnetic material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 MnPt Chemical compound 0.000 description 2
- 229910003289 NiMn Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910017135 Fe—O Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001177925A JP2002367124A (ja) | 2001-06-13 | 2001-06-13 | スピンバルブ型磁気ヘッド |
| JPJP-P-2001-00177925 | 2001-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020095037A true KR20020095037A (ko) | 2002-12-20 |
Family
ID=19018700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020009042A Ceased KR20020095037A (ko) | 2001-06-13 | 2002-02-20 | 폐자로 자구 제어막을 포함하는 스핀 밸브 헤드 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6937449B2 (enExample) |
| JP (1) | JP2002367124A (enExample) |
| KR (1) | KR20020095037A (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905780B2 (en) * | 2001-02-01 | 2005-06-14 | Kabushiki Kaisha Toshiba | Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same |
| US7390584B2 (en) * | 2002-03-27 | 2008-06-24 | Nve Corporation | Spin dependent tunneling devices having reduced topological coupling |
| US6989971B2 (en) * | 2002-04-05 | 2006-01-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process |
| US6760966B2 (en) * | 2002-04-30 | 2004-07-13 | Headway Technologies, Inc. | Process of manufacturing a side reading reduced GMR for high track density |
| JP2004031547A (ja) * | 2002-06-25 | 2004-01-29 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| JP4226280B2 (ja) * | 2002-06-25 | 2009-02-18 | Ｔｄｋ株式会社 | 磁気検出素子及びその製造方法 |
| JP2004031545A (ja) * | 2002-06-25 | 2004-01-29 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| US20040061987A1 (en) * | 2002-09-27 | 2004-04-01 | International Business Machines Corporation | Self-stabilized giant magnetoresistive spin valve read sensor |
| JP4016857B2 (ja) * | 2002-10-18 | 2007-12-05 | ヤマハ株式会社 | 磁気センサ及びその製造方法 |
| JP3865738B2 (ja) | 2003-06-18 | 2007-01-10 | Ｔｄｋ株式会社 | 薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
| JP2005302131A (ja) | 2004-04-09 | 2005-10-27 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及びそれを用いた磁気記録再生装置 |
| JP2005315678A (ja) | 2004-04-28 | 2005-11-10 | Canon Inc | 検出方法、検出デバイス及び検出用キット |
| US7345854B2 (en) * | 2004-07-13 | 2008-03-18 | Headway Technologies, Inc. | GMR sensor having a reference layer with movable magnetization |
| US7324312B2 (en) * | 2004-08-30 | 2008-01-29 | Hitachi Global Storage Technologies Netherlands B.V. | Sensor with in-stack bias structure providing exchange stabilization |
| US7333304B2 (en) * | 2004-11-04 | 2008-02-19 | Hitachi Global Storage Technologies Netherlands B.V. | CPP sensor having hard bias stabilization placed at back edge of the stripe |
| JP2006139886A (ja) | 2004-11-15 | 2006-06-01 | Hitachi Global Storage Technologies Netherlands Bv | 磁気抵抗効果型磁気ヘッド及びその製造方法 |
| US7768749B2 (en) * | 2006-02-10 | 2010-08-03 | Hitachi Global Storage Technologies Netherlands B.V. | Tunnel MR head with long stripe height stabilized through side-extended bias layer |
| US7630177B2 (en) * | 2006-02-14 | 2009-12-08 | Hitachi Global Storage Technologies Netherlands B.V. | Tunnel MR head with closed-edge laminated free layer |
| US20090161269A1 (en) * | 2007-12-21 | 2009-06-25 | James Mac Freitag | Magnetoresistive sensor having an enhanced free layer stabilization mechanism |
| JP5389370B2 (ja) * | 2008-03-04 | 2014-01-15 | 公益財団法人電磁材料研究所 | 強磁性薄膜材料とその製造方法 |
| JP2009031303A (ja) * | 2008-09-22 | 2009-02-12 | Canon Inc | 検出デバイス及び検出用キット |
| US8472148B2 (en) * | 2009-07-24 | 2013-06-25 | HGST Netherlands B.V. | Self-aligned double flux guided TMR sensor |
| US9047892B2 (en) * | 2013-10-24 | 2015-06-02 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability |
| CN114839418A (zh) * | 2021-12-31 | 2022-08-02 | 歌尔微电子股份有限公司 | 传感器、电子设备和检测装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966272A (en) | 1993-06-21 | 1999-10-12 | Read-Rite Corporation | Magnetoresistive read head having an exchange layer |
| US5408377A (en) * | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
| US5465185A (en) | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
| SG46731A1 (en) * | 1995-06-30 | 1998-02-20 | Ibm | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor |
| US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
| JP3013031B2 (ja) | 1996-12-13 | 2000-02-28 | 帝国通信工業株式会社 | 磁気抵抗効果素子及び磁気抵抗センサ |
| JP2914339B2 (ja) * | 1997-03-18 | 1999-06-28 | 日本電気株式会社 | 磁気抵抗効果素子並びにそれを用いた磁気抵抗効果センサ及び磁気抵抗検出システム |
| JP3198265B2 (ja) | 1997-04-10 | 2001-08-13 | アルプス電気株式会社 | 磁気抵抗効果素子 |
| JP3253556B2 (ja) * | 1997-05-07 | 2002-02-04 | 株式会社東芝 | 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気記憶装置 |
| JPH11259824A (ja) | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 磁気記録再生装置及びそれに用いる磁気抵抗効果型磁気ヘッド |
| US6175475B1 (en) * | 1998-05-27 | 2001-01-16 | International Business Machines Corporation | Fully-pinned, flux-closed spin valve |
| US6023395A (en) * | 1998-05-29 | 2000-02-08 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing |
| US6153320A (en) * | 1999-05-05 | 2000-11-28 | International Business Machines Corporation | Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films |
| US6317297B1 (en) * | 1999-10-06 | 2001-11-13 | Read-Rite Corporation | Current pinned dual spin valve with synthetic pinned layers |
| JP2001118217A (ja) * | 1999-10-14 | 2001-04-27 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びスピンバルブ型薄膜磁気素子の製造方法 |
| US6381105B1 (en) * | 1999-10-22 | 2002-04-30 | Read-Rite Corporation | Hybrid dual spin valve sensor and method for making same |
| JP2001176028A (ja) * | 1999-12-14 | 2001-06-29 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘッド及びその製造方法 |
| JP3657487B2 (ja) * | 2000-02-02 | 2005-06-08 | アルプス電気株式会社 | スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
| EP1187103A3 (en) * | 2000-08-04 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, head, and memory element |
| JP2002092829A (ja) * | 2000-09-21 | 2002-03-29 | Fujitsu Ltd | 磁気抵抗センサ及び磁気抵抗ヘッド |
| US6473279B2 (en) | 2001-01-04 | 2002-10-29 | International Business Machines Corporation | In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads |
-
2001
- 2001-06-13 JP JP2001177925A patent/JP2002367124A/ja active Pending
-
2002
- 2002-02-20 US US10/077,854 patent/US6937449B2/en not_active Expired - Fee Related
- 2002-02-20 KR KR1020020009042A patent/KR20020095037A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20030206384A1 (en) | 2003-11-06 |
| US6937449B2 (en) | 2005-08-30 |
| JP2002367124A (ja) | 2002-12-20 |
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20020220 |
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| PG1501 | Laying open of application | ||
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Patent event code: PA02012R01D Patent event date: 20061016 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20020220 Comment text: Patent Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20070830 Patent event code: PE09021S01D |
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Patent event date: 20071108 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20070830 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |