KR20020034889A - 전압 전환 회로 - Google Patents

전압 전환 회로 Download PDF

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Publication number
KR20020034889A
KR20020034889A KR1020010066692A KR20010066692A KR20020034889A KR 20020034889 A KR20020034889 A KR 20020034889A KR 1020010066692 A KR1020010066692 A KR 1020010066692A KR 20010066692 A KR20010066692 A KR 20010066692A KR 20020034889 A KR20020034889 A KR 20020034889A
Authority
KR
South Korea
Prior art keywords
voltage
transistors
circuit
switching circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010066692A
Other languages
English (en)
Korean (ko)
Inventor
나까무라히로시
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR20020034889A publication Critical patent/KR20020034889A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8314—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having gate insulating layers with different properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020010066692A 2000-10-30 2001-10-29 전압 전환 회로 Ceased KR20020034889A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000330973 2000-10-30
JPJP-P-2000-00330973 2000-10-30
JPJP-P-2001-00308693 2001-10-04
JP2001308693A JP4128763B2 (ja) 2000-10-30 2001-10-04 電圧切り替え回路

Publications (1)

Publication Number Publication Date
KR20020034889A true KR20020034889A (ko) 2002-05-09

Family

ID=26603062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010066692A Ceased KR20020034889A (ko) 2000-10-30 2001-10-29 전압 전환 회로

Country Status (5)

Country Link
US (4) US6501323B2 (enrdf_load_stackoverflow)
JP (1) JP4128763B2 (enrdf_load_stackoverflow)
KR (1) KR20020034889A (enrdf_load_stackoverflow)
CN (1) CN1179415C (enrdf_load_stackoverflow)
TW (1) TW546814B (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095245B2 (en) * 2003-11-14 2006-08-22 Intel Corporation Internal voltage reference for memory interface
KR100714115B1 (ko) * 2005-07-29 2007-05-02 한국전자통신연구원 급격한 ｍｉｔ 소자, 그 소자를 이용한 고전압 잡음제거회로 및 그 제거회로를 포함한 전기전자시스템
KR100790977B1 (ko) 2006-01-13 2008-01-03 삼성전자주식회사 출력편차가 개선된 출력버퍼 및 이를 구비한평판표시장치용 소오스 드라이버
KR100710807B1 (ko) * 2006-05-19 2007-04-23 삼성전자주식회사 누설 전류 및 고전압 브레이크다운을 줄일 수 있는 고전압전달 회로 및 그것을 포함한 로우 디코더 회로
KR100776759B1 (ko) 2006-06-15 2007-11-19 주식회사 하이닉스반도체 반도체 메모리의 전원장치 및 그 제어방법
US7598794B1 (en) * 2006-09-28 2009-10-06 Cypress Semiconductor Corporation Well bias architecture for integrated circuit device
CN101079618B (zh) * 2007-05-21 2010-06-30 黑龙江大学 Mos管阈值扩展电路和阈值扩展方法
JP5332528B2 (ja) * 2008-11-14 2013-11-06 株式会社リコー 電子回路および電圧検出回路
US8248152B2 (en) * 2009-02-25 2012-08-21 International Business Machines Corporation Switched capacitor voltage converters
JP2012200083A (ja) * 2011-03-22 2012-10-18 Toshiba Corp スイッチング回路及びｄｃ−ｄｃコンバータ
JP2013005497A (ja) * 2011-06-13 2013-01-07 Toshiba Corp スイッチング回路及びｄｃ−ｄｃコンバータ
US9030855B2 (en) 2011-07-14 2015-05-12 Macronix International Co., Ltd. Semiconductor device, start-up circuit having first and second circuits and a single voltage output terminal coupled to a second node between the semiconductor unit and the first circuit, and operating method for the same
JP6013851B2 (ja) * 2012-09-27 2016-10-25 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
CN103824551B (zh) * 2014-02-27 2016-06-01 上海和辉光电有限公司 一种栅极驱动电路及显示面板
JP6498649B2 (ja) * 2016-10-17 2019-04-10 株式会社東海理化電機製作所 レベルシフタ
CN114049908A (zh) * 2020-11-25 2022-02-15 长江存储科技有限责任公司 一种存储器cmos电路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
JPH05174590A (ja) * 1991-12-20 1993-07-13 Sharp Corp 電源切り換え回路
JPH05259473A (ja) * 1991-12-28 1993-10-08 Samsung Electron Co Ltd 高電圧スイッチ回路
JPH06197001A (ja) * 1992-12-24 1994-07-15 Toshiba Corp レベル変換回路
US5541549A (en) * 1992-05-29 1996-07-30 Fujitsu Limited Transfer gate circuit and dynamic divider circuit using the same
KR970003253A (ko) * 1995-06-09 1997-01-28 김광호 반도체 메모리 장치의 고전압 스위치 회로

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US3749984A (en) * 1969-04-11 1973-07-31 Rca Corp Electroacoustic semiconductor device employing an igfet
JP2592234B2 (ja) * 1985-08-16 1997-03-19 富士通株式会社 半導体装置
JPH088334B2 (ja) 1989-01-13 1996-01-29 株式会社東芝 半導体集積回路
JP2660734B2 (ja) 1989-01-16 1997-10-08 株式会社日立製作所 半導体集積回路装置
FR2662303A1 (fr) * 1990-05-17 1991-11-22 Hello Sa Transistor mos a tension de seuil elevee.
JPH0590515A (ja) 1991-09-27 1993-04-09 Toshiba Corp 電圧転送回路
JP3242129B2 (ja) 1991-10-07 2001-12-25 株式会社コーセー 油性化粧料
US5315188A (en) * 1992-11-02 1994-05-24 Samsung Electronics Co., Ltd. High voltage switching circuit
JP3180662B2 (ja) 1996-03-29 2001-06-25 日本電気株式会社 電源切り替え回路
US6097238A (en) * 1997-01-10 2000-08-01 Xilinx, Inc. Circuit with ramp-up control and overcoming a threshold voltage loss in an NMOS transistor
KR100252476B1 (ko) * 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
US6215348B1 (en) * 1997-10-01 2001-04-10 Jesper Steensgaard-Madsen Bootstrapped low-voltage switch

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
JPH05174590A (ja) * 1991-12-20 1993-07-13 Sharp Corp 電源切り換え回路
JPH05259473A (ja) * 1991-12-28 1993-10-08 Samsung Electron Co Ltd 高電圧スイッチ回路
US5541549A (en) * 1992-05-29 1996-07-30 Fujitsu Limited Transfer gate circuit and dynamic divider circuit using the same
JPH06197001A (ja) * 1992-12-24 1994-07-15 Toshiba Corp レベル変換回路
KR970003253A (ko) * 1995-06-09 1997-01-28 김광호 반도체 메모리 장치의 고전압 스위치 회로

Also Published As

Publication number Publication date
US20030067341A1 (en) 2003-04-10
US6924690B2 (en) 2005-08-02
JP2002203910A (ja) 2002-07-19
US20050218962A1 (en) 2005-10-06
CN1351377A (zh) 2002-05-29
CN1179415C (zh) 2004-12-08
JP4128763B2 (ja) 2008-07-30
US20020050850A1 (en) 2002-05-02
US20070030048A1 (en) 2007-02-08
TW546814B (en) 2003-08-11
US7414454B2 (en) 2008-08-19
US7132875B2 (en) 2006-11-07
US6501323B2 (en) 2002-12-31

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