KR20010069196A - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR20010069196A
KR20010069196A KR1020000025982A KR20000025982A KR20010069196A KR 20010069196 A KR20010069196 A KR 20010069196A KR 1020000025982 A KR1020000025982 A KR 1020000025982A KR 20000025982 A KR20000025982 A KR 20000025982A KR 20010069196 A KR20010069196 A KR 20010069196A
Authority
KR
South Korea
Prior art keywords
voltage
detection
power supply
reference voltage
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020000025982A
Other languages
English (en)
Korean (ko)
Inventor
소노야마히로후미
카와지리요시키
와다마사시
에토준
카와이신지
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
스즈키 진이치로
가부시키가이샤 히타치초에루. 에스. 아이. 시스테무즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼, 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤, 스즈키 진이치로, 가부시키가이샤 히타치초에루. 에스. 아이. 시스테무즈 filed Critical 가나이 쓰토무
Publication of KR20010069196A publication Critical patent/KR20010069196A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16552—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies in I.C. power supplies
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dram (AREA)
KR1020000025982A 1999-05-18 2000-05-16 반도체 집적회로장치 Ceased KR20010069196A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13763099A JP2000331490A (ja) 1999-05-18 1999-05-18 半導体集積回路装置
JP1999-137630 1999-05-18

Publications (1)

Publication Number Publication Date
KR20010069196A true KR20010069196A (ko) 2001-07-23

Family

ID=15203154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000025982A Ceased KR20010069196A (ko) 1999-05-18 2000-05-16 반도체 집적회로장치

Country Status (4)

Country Link
US (1) US6512398B1 (https=)
JP (1) JP2000331490A (https=)
KR (1) KR20010069196A (https=)
TW (1) TW512517B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859839B1 (ko) * 2007-08-29 2008-09-23 주식회사 하이닉스반도체 코아전압 발생회로

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10050561B4 (de) * 2000-10-12 2005-04-28 Dialog Semiconductor Gmbh Integrierte Schaltung mit Schaltungsteilen mit unterschiedlicher Versorgungsspannung
KR100403341B1 (ko) * 2001-08-24 2003-11-01 주식회사 하이닉스반도체 파워-업 신호 발생회로
US6989708B2 (en) * 2003-08-13 2006-01-24 Texas Instruments Incorporated Low voltage low power bandgap circuit
CN101839937B (zh) * 2009-03-18 2012-12-05 智原科技股份有限公司 供电检测装置
EP2977849B8 (en) 2014-07-24 2025-08-06 Renesas Design (UK) Limited High-voltage to low-voltage low dropout regulator with self contained voltage reference

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619156A (en) * 1995-08-29 1997-04-08 Motorola, Inc. Low voltage inhibit circuit and integrated circuit using same
FR2749939B1 (fr) * 1996-06-13 1998-07-31 Sgs Thomson Microelectronics Detecteur de gamme de tension d'alimentation dans un circuit integre
US5852376A (en) * 1996-08-23 1998-12-22 Ramtron International Corporation Bandgap reference based power-on detect circuit including a supression circuit
JPH10247386A (ja) * 1997-03-03 1998-09-14 Mitsubishi Electric Corp 昇圧電位供給回路及び半導体記憶装置
JP2000124744A (ja) * 1998-10-12 2000-04-28 Texas Instr Japan Ltd 定電圧発生回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859839B1 (ko) * 2007-08-29 2008-09-23 주식회사 하이닉스반도체 코아전압 발생회로
US7826278B2 (en) 2007-08-29 2010-11-02 Hynix Semiconductor Inc. Semiconductor memory device for generating core voltage

Also Published As

Publication number Publication date
TW512517B (en) 2002-12-01
US6512398B1 (en) 2003-01-28
JP2000331490A (ja) 2000-11-30

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20000516

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20030106

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20000516

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20041015

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20050103

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20041015

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I