KR20010050905A - 기판세정방법 및 그 장치 - Google Patents
기판세정방법 및 그 장치 Download PDFInfo
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- KR20010050905A KR20010050905A KR1020000058926A KR20000058926A KR20010050905A KR 20010050905 A KR20010050905 A KR 20010050905A KR 1020000058926 A KR1020000058926 A KR 1020000058926A KR 20000058926 A KR20000058926 A KR 20000058926A KR 20010050905 A KR20010050905 A KR 20010050905A
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- substrate
- acid
- copper
- circuit
- nozzle
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 328
- 238000004140 cleaning Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 71
- 229910052802 copper Inorganic materials 0.000 claims abstract description 69
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000002253 acid Substances 0.000 claims abstract description 54
- 239000007800 oxidant agent Substances 0.000 claims abstract description 36
- 230000001590 oxidative effect Effects 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims description 45
- 238000007747 plating Methods 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 27
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229960002050 hydrofluoric acid Drugs 0.000 claims description 10
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 235000006408 oxalic acid Nutrition 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 66
- 238000005406 washing Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000011109 contamination Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims (13)
- 기판을 회전시키면서 그 기판의 표면측 중앙부에 산용액을 연속적으로 공급하면서, 상기 기판의 둘레 가장자리부에 산화제 용액을 연속적 또는 간헐적으로 공급하는 것을 특징으로 하는 기판세정방법.
- 제 1항에 있어서,상기 기판의 이면측에 산화제 용액과 산용액을 동시 또는 교대로 공급하는 것을 특징으로 하는 기판세정방법.
- 제 1항 또는 제 2항에 있어서,상기 산용액은 염산, 플루오르산, 황산, 구연산 및 옥살산중 1종 이상을 함유하고, 상기 산화제 용액은 오존, 과산화수소, 질산 및 차아염소산염중 1종 이상을 함유하는 것을 특징으로 하는 기판세정방법.
- 기판을 유지하여 회전시키는 기판유지부와;상기 기판유지부로 유지되는 기판의 표면측 중앙부 위쪽에 위치하도록 배치한 센터노즐과;상기 기판유지부로 유지되는 기판의 위쪽에 위치하여 기판의 둘레 가장자리부로부터 중앙부 방향 및/또는 기판평면에 대하여 연직방향으로 이동자유롭게 배치한 에지노즐을 가지는 것을 특징으로 하는 기판세정장치.
- 제 4항에 있어서,상기 에지노즐은, 에지노즐로부터 나오는 액의 기판평면에 대한 각도 및/또는 에지노즐로부터 나오는 액의 방향을 기판평면에 투영한 선의 연장선과 그 연장선이 기판 바깥 둘레와 교차하는 점에 있어서의 상기 기판의 접선과 이루는 각도를 자유롭게 변화시키는 것을 특징으로 하는 기판세정장치.
- 표면에 회로가 형성되고, 그 회로상에 구리가 성막된 기판의 세정방법에 있어서,상기 기판을 회전시켜 회로가 형성되어 있는 그 기판 표면의 둘레 가장자리부에 산화제 용액을 공급하여 그 기판 둘레 가장자리부에 부착한 구리를 산화시킴과 동시에, 회로가 형성되어 있는 상기 기판 표면의 중앙부에 산용액을 공급하여 회로형상으로 성막된 구리 표면의 산화막을 제거하면서 상기 기판 둘레 가장자리부에 부착한 구리막을 제거하는 것을 특징으로 하는 기판세정방법.
- 표면에 회로가 형성되고, 그 회로상에 구리가 성막된 기판의 세정방법에 있어서,상기 기판을 회전시켜 회로가 형성되어 있는 상기 기판 표면의 중앙부에 공급되어 그 기판 표면 전체로 퍼진 산용액에 의하여, 상기 기판 둘레 가장자리부의 상면 및 끝면에 성막되어 산화된 구리막을 용해제거하는 것을 특징으로 하는 기판세정방법.
- 제 6항 또는 제 7항에 있어서,상기 산용액은 비산화성의 산인 것을 특징으로 하는 기판세정방법.
- 제 8항에 있어서,상기 비산화성의 산은 염산, 플루오르산, 황산, 구연산 및 옥살산중 1종 이상을 함유하는 것을 특징으로 하는 기판세정방법.
- 제 6항에 있어서,상기 산화제 용액은 오존, 과산화수소, 질산 및 차아염소산중 1종 이상을 함유하는 것을 특징으로 하는 기판세정방법.
- 제 6항 또는 제 7항에 있어서,상기 기판의 회로가 형성된 면과 반대측의 기판 이면측에 산용액을 공급하는 것을 특징으로 하는 기판세정방법.
- 표면에 회로가 형성되고, 그 회로상에 구리가 성막된 기판을 유지하여 회전시키는 기판유지부와;상기 기판유지부로 유지되는 상기 기판의 회로가 형성되어 있는 기판표면의 중앙부에 산용액을 공급하는 센터노즐과;상기 기판의 그 기판 표면의 둘레 가장자리부에 산화제 용액을 공급하는 에지노즐을 가지는 것을 특징으로 하는 기판세정장치.
- 도금처리 및 그에 이어지는 처리를 동일 설비내에서 행하여 기판의 표면에 금속막부착을 행하는 도금장치로서,상기 장치는: 기판을 수납하는 카세트를 얹어 놓는 카세트스테이지와; 기판표면에 도금을 실시하는 도금처리를 유닛과; 도금후의 기판을 적어도 산용액으로 세정하는 제 1 세정장치와; 도금후의 기판을 순수로 세정하는 제 2 세정장치와; 기판을 반송하는 반송장치를 구비하고,상기 제 1 세정장치는: 그 기판을 유지하여 회전시키는 기판유지부와; 상기기판유지부로 유지되는 상기 기판의 회로가 형성되어 있는 기판 표면의 중앙부에 산용액을 공급하는 센터노즐과; 상기 기판의 그 기판 표면의 둘레 가장자리부에 산화제 용액을 공급하는 에지노즐을 가지는 것을 특징으로 하는 도금장치.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-285419 | 1999-10-06 | ||
JP28541999 | 1999-10-06 | ||
JP2000007094 | 2000-01-14 | ||
JP2000-007094 | 2000-01-14 | ||
JP2000288215 | 2000-09-22 | ||
JP2000-288215 | 2000-09-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010050905A true KR20010050905A (ko) | 2001-06-25 |
KR100726015B1 KR100726015B1 (ko) | 2007-06-08 |
Family
ID=27337171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000058926A KR100726015B1 (ko) | 1999-10-06 | 2000-10-06 | 기판세정방법 및 그 장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6558478B1 (ko) |
EP (1) | EP1091388A3 (ko) |
KR (1) | KR100726015B1 (ko) |
TW (1) | TW466561B (ko) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3395696B2 (ja) | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
US6494219B1 (en) * | 2000-03-22 | 2002-12-17 | Applied Materials, Inc. | Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits |
TW490756B (en) * | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
EP1204139A4 (en) * | 2000-04-27 | 2010-04-28 | Ebara Corp | SUPPORT AND ROTATION DEVICE AND SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE |
US7479205B2 (en) * | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
US6951221B2 (en) * | 2000-09-22 | 2005-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
EP1372186B1 (de) * | 2000-10-31 | 2008-12-10 | Sez Ag | Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen |
EP1388164A2 (en) * | 2001-05-18 | 2004-02-11 | Lam Research Corporation | Apparatus and method for substrate preparation implementing a surface tension reducing process |
TW561516B (en) * | 2001-11-01 | 2003-11-11 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
JP3892792B2 (ja) * | 2001-11-02 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置および基板洗浄装置 |
US20030104703A1 (en) * | 2001-12-05 | 2003-06-05 | Jeng-Wei Yang | Cleaning composition and method of washing a silicon wafer |
JP4074814B2 (ja) * | 2002-01-30 | 2008-04-16 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
US7597765B2 (en) * | 2002-09-30 | 2009-10-06 | Lam Research Corporation | Post etch wafer surface cleaning with liquid meniscus |
US7520939B2 (en) * | 2003-04-18 | 2009-04-21 | Applied Materials, Inc. | Integrated bevel clean chamber |
US20070232072A1 (en) * | 2003-04-18 | 2007-10-04 | Bo Zheng | Formation of protection layer on wafer to prevent stain formation |
US20040222101A1 (en) * | 2003-04-18 | 2004-11-11 | Applied Materials, Inc. | Contact ring spin during idle time and deplate for defect reduction |
US20050020077A1 (en) * | 2003-04-18 | 2005-01-27 | Applied Materials, Inc. | Formation of protection layer by dripping DI on wafer with high rotation to prevent stain formation from H2O2/H2SO4 chemical splash |
US7247209B2 (en) * | 2003-06-12 | 2007-07-24 | National Semiconductor Corporation | Dual outlet nozzle for the combined edge bead removal and backside wash of spin coated wafers |
US20050048768A1 (en) * | 2003-08-26 | 2005-03-03 | Hiroaki Inoue | Apparatus and method for forming interconnects |
KR20050022292A (ko) * | 2003-08-27 | 2005-03-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치의 제조방법 |
US7415985B2 (en) * | 2003-09-24 | 2008-08-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning and drying apparatus |
US7431040B2 (en) * | 2003-09-30 | 2008-10-07 | Tokyo Electron Limited | Method and apparatus for dispensing a rinse solution on a substrate |
US20050208774A1 (en) * | 2004-01-08 | 2005-09-22 | Akira Fukunaga | Wet processing method and processing apparatus of substrate |
US20050173253A1 (en) * | 2004-02-05 | 2005-08-11 | Applied Materials, Inc. | Method and apparatus for infilm defect reduction for electrochemical copper deposition |
US20050208225A1 (en) * | 2004-03-19 | 2005-09-22 | Konica Minolta Photo Imaging, Inc. | Coating apparatus and coating method |
KR100594119B1 (ko) * | 2004-06-29 | 2006-06-28 | 삼성전자주식회사 | 기판 표면 처리 장치 |
JP4397299B2 (ja) * | 2004-07-30 | 2010-01-13 | 大日本スクリーン製造株式会社 | 基板処理装置 |
KR100568873B1 (ko) * | 2004-11-30 | 2006-04-10 | 삼성전자주식회사 | 웨이퍼의 에지 비드 스트립용 노즐장치 |
JP2007150167A (ja) * | 2005-11-30 | 2007-06-14 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの平面研削方法および製造方法 |
JP2007165629A (ja) * | 2005-12-14 | 2007-06-28 | Matsushita Electric Ind Co Ltd | エッチング方法及びエッチング装置 |
JP2007220956A (ja) * | 2006-02-17 | 2007-08-30 | Toshiba Corp | 基板処理方法及び基板処理装置 |
CN101389415A (zh) * | 2006-02-22 | 2009-03-18 | 赛迈有限公司 | 单侧工件处理 |
TW200802563A (en) * | 2006-04-18 | 2008-01-01 | Tokyo Electron Ltd | Liquid processing apparatus |
ATE450885T1 (de) | 2006-04-18 | 2009-12-15 | Tokyo Electron Ltd | Flüssigkeitsverarbeitungsvorrichtung |
US9768305B2 (en) | 2009-05-29 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient ternary or quaternary multiple-gate transistor |
US8454760B2 (en) * | 2009-06-01 | 2013-06-04 | Micron Technology, Inc. | Wafer cleaning with immersed stream or spray nozzle |
JP5583503B2 (ja) * | 2010-07-14 | 2014-09-03 | 東京エレクトロン株式会社 | 基板洗浄装置、およびこれを備える塗布現像装置 |
US8722540B2 (en) * | 2010-07-22 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling defects in thin wafer handling |
KR101118929B1 (ko) | 2010-09-13 | 2012-02-27 | 주성엔지니어링(주) | 박막형 태양전지의 제조 장치 및 제조 방법 |
JP5852898B2 (ja) * | 2011-03-28 | 2016-02-03 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US20130034966A1 (en) * | 2011-08-04 | 2013-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Chemical dispersion method and device |
JP6093569B2 (ja) * | 2012-12-28 | 2017-03-08 | 株式会社荏原製作所 | 基板洗浄装置 |
KR101621482B1 (ko) | 2014-09-30 | 2016-05-17 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP6815799B2 (ja) * | 2016-09-13 | 2021-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6975953B2 (ja) * | 2016-12-28 | 2021-12-01 | ヒューグル開発株式会社 | 異物除去装置及び異物除去方法 |
JP6426223B2 (ja) * | 2017-03-31 | 2018-11-21 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP7464467B2 (ja) * | 2020-07-01 | 2024-04-09 | 株式会社ディスコ | ウェーハ洗浄装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06314679A (ja) | 1993-04-30 | 1994-11-08 | Sony Corp | 半導体基板の洗浄方法 |
JP3341033B2 (ja) * | 1993-06-22 | 2002-11-05 | 忠弘 大見 | 回転薬液洗浄方法及び洗浄装置 |
AU7221294A (en) * | 1993-07-30 | 1995-02-28 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
JP3575859B2 (ja) | 1995-03-10 | 2004-10-13 | 株式会社東芝 | 半導体基板の表面処理方法及び表面処理装置 |
US5681398A (en) * | 1995-03-17 | 1997-10-28 | Purex Co., Ltd. | Silicone wafer cleaning method |
JP3518948B2 (ja) * | 1995-08-24 | 2004-04-12 | 大日本スクリーン製造株式会社 | 基板の回転処理装置 |
JPH09186120A (ja) | 1995-12-27 | 1997-07-15 | Sony Corp | 半導体装置の製造方法および製造装置 |
KR100282160B1 (ko) * | 1996-05-07 | 2001-03-02 | 가야시마 고조 | 기판처리장치 및 처리방법 |
US5997653A (en) * | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
JP3111928B2 (ja) | 1997-05-14 | 2000-11-27 | 日本電気株式会社 | 金属膜の研磨方法 |
US6348157B1 (en) * | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
US6260562B1 (en) * | 1997-10-20 | 2001-07-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning apparatus and method |
US6053984A (en) * | 1997-11-17 | 2000-04-25 | Petvai; Steve I. | Method and apparatus for decomposition of silicon oxide layers for impurity analysis of silicon wafers |
US5897379A (en) * | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
JP4766579B2 (ja) | 1998-11-30 | 2011-09-07 | アプライド マテリアルズ インコーポレイテッド | 電気化学堆積装置 |
US6099662A (en) * | 1999-02-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Process for cleaning a semiconductor substrate after chemical-mechanical polishing |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
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US6745784B2 (en) | 2004-06-08 |
TW466561B (en) | 2001-12-01 |
EP1091388A2 (en) | 2001-04-11 |
EP1091388A3 (en) | 2005-09-21 |
US6558478B1 (en) | 2003-05-06 |
US20030168089A1 (en) | 2003-09-11 |
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