KR20010039848A - 기판의 처리방법 및 그 장치 - Google Patents
기판의 처리방법 및 그 장치 Download PDFInfo
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- KR20010039848A KR20010039848A KR1020000050566A KR20000050566A KR20010039848A KR 20010039848 A KR20010039848 A KR 20010039848A KR 1020000050566 A KR1020000050566 A KR 1020000050566A KR 20000050566 A KR20000050566 A KR 20000050566A KR 20010039848 A KR20010039848 A KR 20010039848A
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- Prior art keywords
- substrate
- hydrogen peroxide
- sulfuric acid
- treatment liquid
- liquid
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 100
- 238000003672 processing method Methods 0.000 claims abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 110
- 238000002156 mixing Methods 0.000 claims description 45
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 36
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 9
- 238000007664 blowing Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000003260 vortexing Methods 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004090 dissolution Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (12)
- 기판을 종류가 상이한 복수의 처리액으로 순차 처리하는 기판의 처리방법에 있어서,황산과 과산화수소수를 혼합한 제1처리액으로 상기 기판을 처리하는 제1공정과,상기 제1처리액에 의해 상기 기판의 처리가 종료한 후 상기 제1처리액을 과산화수소수만으로 하여 공급하는 제2공정과,상기 제1처리액의 과산화수소수만을 소정시간 공급한 다음 상기 기판을 세척하기 위한 제2처리액을 공급하는 제3공정을 포함하는 것을 특징으로 하는 기판의 처리방법
- 제1항에 있어서, 상기 제1공정은, 상기 기판의 중심부와 주변부에서 발생하는 온도차에 대응하여 상기 제1처리액의 황산과 과산화수소수의 혼합비율 또는 제1처리액의 공급량의 적어도 어느 하나를 제어하는 것을 특징으로 하는 기판의 처리방법.
- 제1항에 있어서, 상기 제1공정은, 제1처리액의 온도를 검출하고 이 온도에 대응하여 황산과 과산화수소수의 혼합비율 또는 제1처리액의 공급량의 적어도 어느 하나를 제어하는 것을 특징으로 하는 기판의 처리방법.
- 기판을 종류가 상이한 복수의 처리액으로 순차 처리하는 기판의 처리장치에 있어서,상기 기판을 유지하는 회전체와,상기 회전체를 회전 구동하는 구동원과,상기 회전체에 유지된 기판에 황산과 과산화수소수를 소정의 비율로 혼합한 제1처리액과 상기 기판을 세척하는 제2처리액을 공급하는 노즐체와,상기 노즐체에 공급되는 황산과 과산화수소수 및 제2처리액을 선택하는 절환기구와,상기 노즐체에 공급되는 제1처리액의 황산과 과산화수소수의 혼합비율을 조정하는 농도 조정기구와,상기 절환기구에 의한 황산, 과산화수소수 및 제2처리액의 공급과,상기 농도 조정기구에 의한 황산과 과산화수소수와의 혼합비율의 조정을 제어하는 제어장치를 포함하는 것을 특징으로 하는 기판의 처리장치.
- 제 4항에 있어서,상기 노즐체에는 상기 황산을 공급하는 제 1 공급관과, 상기 과산화수소수를 공급하는 제 2 공급관과, 상기 제 2 처리액을 공급하는 제 3 공급관이 각각 접속되어 있는 것을 특징으로 하는 기판의 처리장치.
- 제 4항에 있어서,상기 절환기구는 상기 제 1 내지 제 3 공급관에 각각 설치되어 있는 개폐밸브인 것을 특징으로 하는 기판의 처리장치.
- 제 4항에 있어서,상기 농도 조정기구는 상기 제 1 공급관과 제 2 공급관에 각각 설치된 유량 조정밸브인 것을 특징으로 하는 기판의 처리장치.
- 제 4항에 있어서,상기 노즐체에는 상기 제 1 처리액의 온도를 검출하는 온도센서가 설치되고,상기 제어장치는 상기 온도센서가 검출한 상기 제 1 처리액의 온도에 대응하여 상기 농도조정기구를 제어하여 상기 제 1 처리액의 황산과 과산화수소수의 농도를 조정하는 것을 특징으로 하는 기판의 처리장치.
- 제 4 항에 있어서,상기 회전체의 회전수를 검출하는 회전수검출센서가 설치되고,상기 제어장치는 상기 회전수 검출센서가 검출한 상기 회전수에 대응하여 상기 농도저정기구를 제어하여 상기 제 1 처리액의 황산과 과산화수소수의 혼합비율을 조정하는 것을 특징으로 하는 기판의 처리장치.
- 제 4항에 있어서,상기 노즐체에는 이 노즐체에 공급되는 상기 제 1 처리액의 황산과 과산화수소수를 혼합하는 혼합기구가 설치된 것을 특징으로 하는 기판의 처리장치.
- 제 10항에 있어서,상기 노즐체는,상기 황산과 과산화수소수가 유입하는 혼합실과, 이 혼합실로 유입하는 황산과 과산화수소수를 분출하는 분출공을 가지며,상기 혼합기구는 상기 분출공에 설치된 상기 황산과 과산화수소수의 흐름을 와류로하는 장해부재인 것을 특징으로 하는 기판의 처리장치.
- 제 4 항에 있어서,상기 회전체의 상방에는 선단부와 기단부를 가지는 아암체가 설치되고, 상기 선단부에는 상기 노즐체가 설치되며, 상기 기단부에는 상기 아암체를 소정의 범위내의 각도로 회전구동하는 구동기구가 설치되어 있고,상기 노츨체는 상기 아암체의 회전구동에 의해 상기 회전체에 유지된 상기 기판의 직경방향을 따라 구동되는 것을 특징으로 하는 기판의 처리장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23849399 | 1999-08-25 | ||
JP11-238493 | 1999-08-25 | ||
JP27303199A JP4475705B2 (ja) | 1999-09-27 | 1999-09-27 | 基板の処理方法及びその装置 |
JP11-273031 | 1999-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010039848A true KR20010039848A (ko) | 2001-05-15 |
KR100654698B1 KR100654698B1 (ko) | 2006-12-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020000050566A KR100654698B1 (ko) | 1999-08-25 | 2000-08-25 | 기판의 처리방법 및 그 장치 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6299697B1 (ko) |
KR (1) | KR100654698B1 (ko) |
TW (1) | TW492049B (ko) |
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US9717668B2 (en) | 2015-04-24 | 2017-08-01 | Liqwd, Inc. | Methods for treating relaxed hair |
US9855447B2 (en) | 2013-08-01 | 2018-01-02 | Liqwd, Inc. | Methods for fixing hair and skin |
US9872821B1 (en) | 2016-07-12 | 2018-01-23 | Liqwd, Inc. | Methods and formulations for curling hair |
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- 2000-08-25 KR KR1020000050566A patent/KR100654698B1/ko active IP Right Grant
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2001
- 2001-08-22 US US09/935,034 patent/US6363950B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US20010052354A1 (en) | 2001-12-20 |
TW492049B (en) | 2002-06-21 |
US6299697B1 (en) | 2001-10-09 |
KR100654698B1 (ko) | 2006-12-07 |
US6363950B2 (en) | 2002-04-02 |
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