KR20000027496A - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
- Publication number
- KR20000027496A KR20000027496A KR1019980045441A KR19980045441A KR20000027496A KR 20000027496 A KR20000027496 A KR 20000027496A KR 1019980045441 A KR1019980045441 A KR 1019980045441A KR 19980045441 A KR19980045441 A KR 19980045441A KR 20000027496 A KR20000027496 A KR 20000027496A
- Authority
- KR
- South Korea
- Prior art keywords
- amorphous silicon
- substrate
- gate
- heat treatment
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000003054 catalyst Substances 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 22
- 230000004913 activation Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
- 필드 산화막이 형성된 반도체 기판 상에 게이트 산화막 및 비정질 실리콘막을 형성하는 단계;상기 비정질 실리콘막 및 게이트 산화막을 패터닝하여 비정질 실리콘 게이트를 형성하는 단계;상기 기판으로 소오스 및 드레인용 불순물 이온을 이온주입하여 상기 비정질 실리콘 게이트를 도핑시킴과 동시에 상기 비정질 실리콘 게이트 양 측의 기판을 비정질화시켜 도핑된 비정질화 영역을 형성하는 단계;상기 기판 전면에 불순물 활성화 촉매용 금속막을 초박막으로 형성하는 단계;상기 기판을 저온에서 열처리하여 도핑된 폴리실리콘 게이트를 형성함과 동시에 결정화된 소오스 및 드레인 영역을 형성하는 단계; 및,상기 열처리시 미반응된 촉매용 금속막을 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 불순물 활성화 촉매용 금속막은 Ni, Pd, Pt, W, Cr, Co, Cu, Al, Sn, P, As, Sb, Ag, In의 단일원소 또는 2종류 이상의 혼합원소로 이루어진 그룹으로부터 선택되는 하나의 원소를 이용하여 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항 또는 제 2 항에 있어서, 상기 촉매용 금속막은 3 내지 100Å의 두께로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 열처리는 350 내지 600℃의 온도에서 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항 또는 제 4 항에 있어서, 상기 열처리는 엑시머 레이저 열처리 방법, UV 열처리 방법, 급속 열처리 방법 또는 저항가열식 노열처리 방법등을 이용하여 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 촉매용 금속막을 제거하는 단계는 습식식각으로 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0045441A KR100466397B1 (ko) | 1998-10-28 | 1998-10-28 | 반도체 소자의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0045441A KR100466397B1 (ko) | 1998-10-28 | 1998-10-28 | 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000027496A true KR20000027496A (ko) | 2000-05-15 |
KR100466397B1 KR100466397B1 (ko) | 2005-04-06 |
Family
ID=19555830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0045441A KR100466397B1 (ko) | 1998-10-28 | 1998-10-28 | 반도체 소자의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100466397B1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421906B1 (ko) * | 2001-05-21 | 2004-03-10 | 엘지.필립스 엘시디 주식회사 | 다결정화 방법과 이를 이용한 액정표시장치 제조방법 |
KR100434314B1 (ko) * | 2001-05-21 | 2004-06-05 | 엘지.필립스 엘시디 주식회사 | 다결정화 방법 및 이를 이용한 액정표시장치 제조방법 |
KR100464205B1 (ko) * | 2001-07-10 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 표시소자 및 그 제조방법 |
KR100910569B1 (ko) * | 2008-01-30 | 2009-08-03 | 연세대학교 산학협력단 | 결정화용 구조물 및 이를 이용한 결정화 방법 |
KR101051954B1 (ko) * | 2004-02-05 | 2011-07-26 | 매그나칩 반도체 유한회사 | 반도체 소자의 트랜지스터 형성방법 |
-
1998
- 1998-10-28 KR KR10-1998-0045441A patent/KR100466397B1/ko not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421906B1 (ko) * | 2001-05-21 | 2004-03-10 | 엘지.필립스 엘시디 주식회사 | 다결정화 방법과 이를 이용한 액정표시장치 제조방법 |
KR100434314B1 (ko) * | 2001-05-21 | 2004-06-05 | 엘지.필립스 엘시디 주식회사 | 다결정화 방법 및 이를 이용한 액정표시장치 제조방법 |
KR100464205B1 (ko) * | 2001-07-10 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 표시소자 및 그 제조방법 |
KR101051954B1 (ko) * | 2004-02-05 | 2011-07-26 | 매그나칩 반도체 유한회사 | 반도체 소자의 트랜지스터 형성방법 |
KR100910569B1 (ko) * | 2008-01-30 | 2009-08-03 | 연세대학교 산학협력단 | 결정화용 구조물 및 이를 이용한 결정화 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100466397B1 (ko) | 2005-04-06 |
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