KR20000026955A - 반도체 패키지 및 그 제조방법 - Google Patents

반도체 패키지 및 그 제조방법 Download PDF

Info

Publication number
KR20000026955A
KR20000026955A KR1019980044721A KR19980044721A KR20000026955A KR 20000026955 A KR20000026955 A KR 20000026955A KR 1019980044721 A KR1019980044721 A KR 1019980044721A KR 19980044721 A KR19980044721 A KR 19980044721A KR 20000026955 A KR20000026955 A KR 20000026955A
Authority
KR
South Korea
Prior art keywords
substrate
semiconductor chip
chip
semiconductor
lead
Prior art date
Application number
KR1019980044721A
Other languages
English (en)
Other versions
KR100302593B1 (ko
Inventor
신명진
Original Assignee
김영환
현대반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대반도체 주식회사 filed Critical 김영환
Priority to KR1019980044721A priority Critical patent/KR100302593B1/ko
Priority to US09/422,799 priority patent/US6339255B1/en
Priority to JP30033999A priority patent/JP4400965B2/ja
Publication of KR20000026955A publication Critical patent/KR20000026955A/ko
Application granted granted Critical
Publication of KR100302593B1 publication Critical patent/KR100302593B1/ko
Priority to US09/977,313 priority patent/US6500698B2/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06551Conductive connections on the side of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49169Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171Assembling electrical component directly to terminal or elongated conductor with encapsulating
    • Y10T29/49172Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

본 발명은 반도체 패키지 및 그 제조방법에 관한 것으로, 상면에 제 1 도전성 패드가 형성되고, 하면에 제 2 도전성패드가 형성된 기판과; 상기 기판의 상면에 부착된 제 1 반도체 칩과; 상기 제 1 반도체 칩과 상기 제 1 도전성 패드를 연결하는 제 1 도전선과; 상기 기판의 양측부에 부착된 복수개의 리드와; 상기 기판, 상기 제 1 반도체 칩, 상기 제 1 도전선을 밀봉하는 제 1 몰딩부와; 상기 제 1 몰딩부의 상면에 부착된 제 2 반도체 칩과; 상기 제 2 반도체 칩과 상기 리드를 연결하는 제 2 도전선과; 상기 제 2 반도체 칩, 상기 제 2 도전선, 상기 리드의 일부를 밀봉하는 제 2 몰딩부로 구성되고, 하나의 패키지에 두 개의 반도체 칩을 내장하여 제한된 면적에서 메모리용량을 극대화시키는 효과가 있다.

Description

반도체 패키지 및 그 제조방법
본 발명은 반도체 패키지 및 그 제조방법에 관한 것으로, 특히 두 개의 반도체 칩이 적층형태로서 하나의 반도체 패키지로 패키징하기에 적당하도록 한 개선된 반도체 패키지 및 그 제조방법에 관한 것이다.
종래, 하나의 반도체 칩이 패키징된 하나의 반도체 패키지가 주류를 이루어왔고, 그 형태 또한 몇 가지로 고정되어 있었다. 그 중에서, 에스오제이(SOJ : Small Outline J-leaded) 반도체 패키지에 대해 도 1 을 참조하여 설명하면 다음과 같다.
에스오제이 반도체 패키지는 반도체 칩(1)을 리드프레임의 다이패들(3)에 절연성 테이프나 페이스트를 이용하여 고정부착하고, 반도체 칩(1)의 패드와 내부리드(2) 사이를 전도성 도선(4)으로 접속하여 전기적으로 연결한 후, 몰딩수지(5)로 상기 반도체 칩(1)과 내부리드(2) 및 도선(4)들을 밀봉하여 패키지의 몸체(6)를 형성하고, 그 내부리드(2)로부터 패키지몸체(6)의 외측으로 연장형성된 외부리드(2)를 "J"자 형태로 성형한 구조로 구성되어 있다.
상기한 바와 같은 종래 반도체 패키지는 하나의 패키지안에 하나의 반도체 칩만이 패키징되도록 그 형태가 고정되어 인쇄회로기판상에 실장시, 상기 기판상에 패키지가 차지하는 점유면적(공간)이 항상 일정하여 그 효율성이 떨어지는 문제점이 있었다.
따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 두 개의 반도체 칩을 하나의 패키지안에 패키징하여 집적도를 향상시키고자 하는데 그 목적이 있다.
상기와 같은 목적을 달성하기 위하여 본 발명에 따른 반도체 패키지는 상면에 제 1 도전성 패드가 형성되고, 하면에 제 2 도전성패드가 형성된 기판과; 상기 기판의 상면에 부착된 제 1 반도체 칩과; 상기 제 1 반도체 칩과 상기 제 1 도전성 패드를 연결하는 제 1 도전선과; 상기 기판의 양측부에 부착된 복수개의 리드와; 상기 기판, 상기 제 1 반도체 칩, 상기 제 1 도전선을 밀봉하는 제 1 몰딩부와; 상기 제 1 몰딩부의 상면에 부착된 제 2 반도체 칩과; 상기 제 2 반도체 칩과 상기 리드를 연결하는 제 2 도전선과; 상기 제 2 반도체 칩, 상기 제 2 도전선, 상기 리드의 일부를 밀봉하는 제 2 몰딩부로 구성된 것을 특징으로 한다.
또한, 상기와 같은 목적을 달성하기 위하여 본 발명에 따른 반도체 패키지의 제조방법은 내부에 회로가 내장된 기판의 상면에 제 1 도전성 패드를 형성하는 공정과; 상기 기판의 하면에 제 2 도전성 패드를 형성하는 공정과; 상기 기판의 상면에 제 1 반도체 칩을 부착하는 공정과; 상기 제 1 반도체 칩과 상기 제 1 도전성 패드를 전기적으로 연결하는 공정과; 상기 기판의 양측부에 복수개의 리드를 형성하는 공정과; 상기 제 1 반도체 칩과 상기 기판을 밀봉하여 제 1 몰딩부를 형성하는 공정과; 상기 제 1 몰딩부 상면에 제 2 반도체 칩을 부착하는 공정과; 상기 제 2 반도체 칩과 상기 리드를 전기적으로 연결하는 공정과; 상기 제 2 반도체 칩과 상기 리드의 일부를 밀봉하여 제 2 몰딩부를 형성하는 공정을 포함하여 이루어지는 것을 특징으로 한다.
또한, 상기 기판은 상면에 형성된 제 1 도전성 패드와, 하면에 형성된 제 2 도전성 패드와, 개구부(opening)와, 상기 개구부(opening)의 측면에 상기 제 1 도전성 패드와 상기 제 2 도전성 패드를 전기적으로 연결하는 연결수단을 구비한 것을 특징으로 한다.
도 1 은 종래 에스오제이(SOJ) 반도체 패키지의 종단면도.
도 2 는 본 발명에 따른 반도체 패키지의 바람직한 제 1 실시예의 종단면도.
도 3a∼3g 는 본 발명의 제 1 실시예에 따른 반도체 패키지의 제조방법을 설명하기 위한 순차적인 종단면도.
도 4 는 본 발명에 따른 반도체 패키지의 바람직한 제 2 실시예의 종단면도.
도 5 는 본 발명에 따른 반도체 패키지의 바람직한 제 3 실시예의 종단면도.
** 도면의 주요부분에 대한 부호설명 **
10 : 기판 20 : 제 1 도전성 패드
30 : 제 2 도전성 패드 40 : 제 1 반도체 칩
50 : 제 1 도전선 60 : 리드
61 : 칩접속리드 62 : 기판연결리드
70 : 제 1 몰딩부 71, 111 : 몰딩수지
80 : 제 2 반도체 칩 90 : 접착부재
100 : 제 2 도전선 110 : 제 2 몰딩부
이하, 본 발명에 따른 반도체 패키지 및 그 제조방법에 대해 설명한다.
도 2 는 본 발명에 따른 반도체 패키지의 바람직한 제 1 실시예의 종단면도를 도시한 것이다. 이와같은 반도체 패키지는 도전성 물질로 이루어진 회로패턴(미도시)이 내설된 기판(10)이 있고, 상기 기판(10)상의 좌우측에 복수의 제 1 도전성 패드(20)가 형성되어 있고, 상기 기판(10)의 하면상에 상기 제 1 도전성 패드(20)들과 대응하는 복수의 제 2 도전성 패드(30)가 형성되어 있다. 상기 제 1 도전성 패드(20)들과 상기 제 2 도전성 패드(30)들은 상기 기판(10)에 내설된 회로패턴을 통해 각각 전기적으로 연결되어 있고, 상기 제 1 도전성 패드(20) 사이의 상기 기판(10)상에 복수의 칩패드(미도시)를 가진 제 1 반도체 칩(40)이 부착되어 있으며, 상기 제 1 반도체 칩(40)의 칩패드들과 상기 제 1 도전성 패드(20)들이 제 1 도전선(50)로 각각 전기적으로 연결되어 있다. 그리고, 상기 기판(10)의 양측단부에 리드(60)가 부착되어 있다. 상기 리드(60)를 제외한 상기 기판(10), 제 1 도전성 패드(20), 제 2 도전성 패드(30), 제 1 반도체 칩(40) 및 제 1 도전선(50)가 몰딩수지(71)인 에폭시에 의해 밀봉된 제 1 몰딩부(70)가 형성되어있다. 상기 제 1 몰딩부(70)의 상하면과 상기 리드(60)의 상하면은 각각 동일면상에 위치한다.
상기 제 1 몰딩부(70)의 상면 중앙에 복수의 칩패드(미도시)를 가지는 제 2 반도체 칩(80)이 접착부재(90)에 의해 부착되어 있고, 상기 제 2 반도체 칩(80)의 칩패드들과 상기 리드(60)의 칩접속리드(61)들의 각 일단이 제 2 도전선(100)에 의해 전기적으로 연결되어 있다. 상기 제 2 반도체 칩(80)과 상기 제 2 도전선(100)를 포함한 상기 제 1 몰딩부(70)상의 일정면적이 몰딩수지(111)에 의해 밀봉된 제 2 몰딩부(110)가 형성되어 있는 구조로 구성된다.
상기 각 리드(60)는 기판연결리드(62)와 그로부터 상향절곡되어 형성된 칩접속리드(61)로 구성되고, 그의 수직높이는 상기 기판(10)의 하면부터 상기 제 1 도전선(50)까지의 수직높이보다 크게 형성된다.
도 3a 내지 도 3g 는 본 발명에 제 1 실시예에 따른 반도체 패키지의 제조방법을 설명하기 위한 순차적인 종단면도를 도시한 것이다.
도 3a 에 도시된 바와 같이, 기판(10)상의 양측에 다수개의 제 1 도전성 패드(20)을 형성하고, 상기 각 제 1 도전성 패드(20)에 대응하는 다수개의 제 2 도전성 패드(30)를 그의 하면에 형성한다. 상기 기판(10)은 그 내부에 도전물질로 이루어진 회로패턴(미도시)이 내설되고, 상기 제 1 도전성 패드(20)들과 제 2 도전성 패드(30)들은 상기 회로패턴에 의해 상호대응하는 기판패드(20)(30)들이 각각 전기적으로 연결된다.
도 3b 에 도시된 바와 같이, 상기 기판(10)상의 중앙, 즉 상기 제 1 도전성 패드(20)사이의 상기 기판(10)상에 다수개의 칩패드(미도시)를 가진 제 1 반도체 칩(40)을 부착하고, 상기 제 1 반도체 칩(40)의 칩패드들과 상기 제 1 도전성 패드(20)들을 제 1 도전선(50)를 이용하여 각각 전기적으로 연결한다.
도 3c 에 도시된 바와 같이, 상기 반도체 기판(10)의 양측단부에 다수개의 리드(60)를 부착한다. 상기 리드(60)는 그의 하면이 기판에 연결되는 기판연결리드(62)와 그로부터 상향절곡된 칩접속리드(61)로 형성된다.
도 3d 에 도시된 바와 같이, 상기 리드(60)들을 제외한 상기 기판(10), 제 1 반도체 칩(40), 기판패드(20)(30)들 및 제 1 도전선(50)를 포함하는 일정면적을 몰딩수지(71)로 밀봉하여 몰딩부(70)를 형성한다. 상기 몰딩수지(71)로는 에폭시수지가 널리 사용된다.
몰딩 후, 상기 제 2 도전성 패드(30)의 하면은 노출되고, 상기 제 1 몰딩부(70)의 상면은 상기 리드(60)의 상면과, 그의 하면은 상기 리드(60)의 하면과 동일면상에 위치한다.
도 3e 에 도시된 바와 같이, 상기 제 1 상기 제 1 몰딩부(40)상의 중앙에 다수개의 칩패드(미도시)를 가진 제 2 반도체 칩(80)을 접착부재(90)를 이용하여 부착한다. 상기 몰딩수지로는 에폭시수지가 널리 사용된다.
도 3f 에 도시된 바와 같이, 상기 제 2 반도체 칩(80)의 칩패드들과 노출된 상기 리드(60)의 칩접속리드(61)들을 제 2 도전선(100)를 이용하여 각각 전기적으로 연결한다.
그리고, 도 3g 에 도시된 바와 같이, 상기 제 2 반도체 칩(80), 상기 칩접속리드(61) 상면의 일부 및 제 2 도전선(100)를 포함하는 상기 제 1 몰딩부(70)상의 일정면적을 몰딩수지(111)를 이용하여 몰딩하여 제 2 몰딩부(110)를 형성함으로서 본 발명에 따른 반도체 패키지가 완성된다. 상기 몰딩수지(111)로는 에폭시수지가 널리 사용된다.
도 4 는 본 발명에 따른 반도체 패키지의 바람직한 제 2 실시예의 종단면도로서, 이에 도시된 바와 같이, 리드(60)의 형상을 달리한 점을 제외하고는 도 2 의 구성과 동일하여 설명을 생략한다.
도 5 은 본 발명에 따른 반도체 패키지의 바람직한 제 3 실시예의 종단면도로서, 이에 도시된 바와 같이, 상기 기판(10)의 중앙에 길이방향으로 개구부(opening)가 형성되어 있고, 상기 기판(10)내에 회로패턴을 내설하는 대신 상기 개구부(opening)의 내측벽에 측면패드(11)를 형성함으로서 상호대응하는 상기 기판패드(20)(30)들이 전기적으로 연결되어 있다. 이점들을 제외한 다른 구성들은 도 2 의 구성과 동일하므로 생략하기로 한다(도 2 참조).
상기한 바와 같은 본 발명에 따른 반도체 패키지는 하나의 패키지에 두 개의 반도체 칩을 내장하여 제한된 면적에서 메모리용량을 극대화시키는 효과가 있다.

Claims (5)

  1. 제 1 반도체 칩(40)을 포함하는 제 1 몰딩부(70)와;
    상기 제 1 몰딩부(70) 상부에 형성되어 제 2 반도체 칩(80)을 포함하는 제 2 몰딩부(110)로 구성된 것을 특징으로 하는 반도체 패키지.
  2. 제 1 항에 있어서, 상기 제 1 몰딩부(70)는
    상기 제 1 반도체 칩(40)이 부착된 기판(10)과;
    상기 기판(10)의 양측부에 부착된 복수개의 리드(60)와;
    상기 제 1 반도체 칩(40), 상기 기판(10)을 밀봉하는 몰딩수지(71)로 이루어진 것을 특징으로 하는 반도체 패키지.
  3. 제 1 항에 있어서, 상기 제 2 몰딩부(110)는
    상기 제 1 몰딩부(70)상에 부착된 상기 제 2 반도체 칩(80)과;
    상기 제 2 반도체 칩(80)의 칩패드와 상기 리드(60)를 전기적으로 연결하는 제 2 도전선(100)과;
    상기 제 2 반도체 칩(80), 상기 제 2 도전선(100), 상기 리드(60)의 일부를 밀봉하는 몰딩수지(111)로 이루어진 것을 특징으로 하는 반도체 패키지.
  4. 제 2 항에 있어서, 상기 기판(10)은
    상면에 형성된 제 1 도전성 패드(20)와;
    하면에 형성된 제 2 도전성 패드(30)와;
    개구부(opening)와;
    상기 개구부(opening)의 측면에 상기 제 1 도전성 패드(20)와 상기 제 2 도전성 패드(30)를 전기적으로 연결하는 연결수단을 구비한 것을 특징으로 하는 반도체 패키지.
  5. 기판(10)에 제 1 반도체 칩(40)을 부착하는 공정과;
    상기 기판(10)의 양측부에 복수개의 리드(60)를 부착하는 공정과;
    상기 기판(10)과, 상기 제 1 반도체 칩(40)을 밀봉하여 제 1 몰딩부(70)를 형성하는 공정과;
    상기 제 1 몰딩부(70) 상면에 제 2 반도체 칩(80)을 부착하는 공정과;
    상기 제 2 반도체 칩(80)과 상기 리드(60)를 전기적으로 연결하는 공정과;
    상기 제 2 반도체 칩(80), 상기 리드(60)의 일부를 밀봉하여 제 2 몰딩부(110)를 형성하는 공정을 포함하여 이루어진 것을 특징으로 하는 반도체 패키지의 제조방법.
KR1019980044721A 1998-10-24 1998-10-24 반도체패키지및그제조방법 KR100302593B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980044721A KR100302593B1 (ko) 1998-10-24 1998-10-24 반도체패키지및그제조방법
US09/422,799 US6339255B1 (en) 1998-10-24 1999-10-22 Stacked semiconductor chips in a single semiconductor package
JP30033999A JP4400965B2 (ja) 1998-10-24 1999-10-22 積層化半導体パッケージ及びその製造方法
US09/977,313 US6500698B2 (en) 1998-10-24 2001-10-16 Method for fabricating a stacked semiconductor chip package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980044721A KR100302593B1 (ko) 1998-10-24 1998-10-24 반도체패키지및그제조방법

Publications (2)

Publication Number Publication Date
KR20000026955A true KR20000026955A (ko) 2000-05-15
KR100302593B1 KR100302593B1 (ko) 2001-09-22

Family

ID=19555274

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980044721A KR100302593B1 (ko) 1998-10-24 1998-10-24 반도체패키지및그제조방법

Country Status (3)

Country Link
US (2) US6339255B1 (ko)
JP (1) JP4400965B2 (ko)
KR (1) KR100302593B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101530688B1 (ko) * 2007-06-27 2015-06-22 스태츠 칩팩 엘티디 비접착 패키지 부착에 의한 집적 회로 패키지-인-패키지시스템

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
DE19843624C1 (de) * 1998-09-23 2000-06-15 Siemens Ag Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung
KR100302593B1 (ko) * 1998-10-24 2001-09-22 김영환 반도체패키지및그제조방법
KR20010037247A (ko) * 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
KR100421774B1 (ko) * 1999-12-16 2004-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조 방법
US6404046B1 (en) * 2000-02-03 2002-06-11 Amkor Technology, Inc. Module of stacked integrated circuit packages including an interposer
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
JP3405456B2 (ja) * 2000-09-11 2003-05-12 沖電気工業株式会社 半導体装置,半導体装置の製造方法,スタック型半導体装置及びスタック型半導体装置の製造方法
JP4637380B2 (ja) * 2001-02-08 2011-02-23 ルネサスエレクトロニクス株式会社 半導体装置
KR100401020B1 (ko) * 2001-03-09 2003-10-08 앰코 테크놀로지 코리아 주식회사 반도체칩의 스택킹 구조 및 이를 이용한 반도체패키지
US6545345B1 (en) 2001-03-20 2003-04-08 Amkor Technology, Inc. Mounting for a package containing a chip
KR100369393B1 (ko) * 2001-03-27 2003-02-05 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
KR100393448B1 (ko) * 2001-03-27 2003-08-02 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
US20030042615A1 (en) * 2001-08-30 2003-03-06 Tongbi Jiang Stacked microelectronic devices and methods of fabricating same
US6946323B1 (en) 2001-11-02 2005-09-20 Amkor Technology, Inc. Semiconductor package having one or more die stacked on a prepackaged device and method therefor
US7057269B2 (en) * 2002-10-08 2006-06-06 Chippac, Inc. Semiconductor multi-package module having inverted land grid array (LGA) package stacked over ball grid array (BGA) package
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
US6998721B2 (en) * 2002-11-08 2006-02-14 Stmicroelectronics, Inc. Stacking and encapsulation of multiple interconnected integrated circuits
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US6798047B1 (en) 2002-12-26 2004-09-28 Amkor Technology, Inc. Pre-molded leadframe
US6781243B1 (en) 2003-01-22 2004-08-24 National Semiconductor Corporation Leadless leadframe package substitute and stack package
US6750545B1 (en) 2003-02-28 2004-06-15 Amkor Technology, Inc. Semiconductor package capable of die stacking
US6794740B1 (en) 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
US6853064B2 (en) * 2003-05-12 2005-02-08 Micron Technology, Inc. Semiconductor component having stacked, encapsulated dice
US7713841B2 (en) * 2003-09-19 2010-05-11 Micron Technology, Inc. Methods for thinning semiconductor substrates that employ support structures formed on the substrates
US20050064679A1 (en) * 2003-09-19 2005-03-24 Farnworth Warren M. Consolidatable composite materials, articles of manufacture formed therefrom, and fabrication methods
US20050064683A1 (en) * 2003-09-19 2005-03-24 Farnworth Warren M. Method and apparatus for supporting wafers for die singulation and subsequent handling
TWI239083B (en) * 2004-02-26 2005-09-01 Advanced Semiconductor Eng Chip package structure
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
JP2006041438A (ja) * 2004-07-30 2006-02-09 Shinko Electric Ind Co Ltd 半導体チップ内蔵基板及びその製造方法
US7598606B2 (en) * 2005-02-22 2009-10-06 Stats Chippac Ltd. Integrated circuit package system with die and package combination
SG132533A1 (en) * 2005-11-21 2007-06-28 St Microelectronics Asia Ultra-thin quad flat no-lead (qfn) package and method of fabricating the same
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
US7638861B2 (en) * 2005-12-08 2009-12-29 Fairchild Semiconductor Corporation Flip chip MLP with conductive ink
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
US20080237824A1 (en) * 2006-02-17 2008-10-02 Amkor Technology, Inc. Stacked electronic component package having single-sided film spacer
US7675180B1 (en) 2006-02-17 2010-03-09 Amkor Technology, Inc. Stacked electronic component package having film-on-wire spacer
TWI278077B (en) * 2006-02-24 2007-04-01 Advanced Semiconductor Eng Die package structure
US7981702B2 (en) * 2006-03-08 2011-07-19 Stats Chippac Ltd. Integrated circuit package in package system
JP3942190B1 (ja) * 2006-04-25 2007-07-11 国立大学法人九州工業大学 両面電極構造の半導体装置及びその製造方法
KR100731678B1 (ko) * 2006-05-08 2007-06-22 서울반도체 주식회사 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치
US7633144B1 (en) 2006-05-24 2009-12-15 Amkor Technology, Inc. Semiconductor package
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
US7816769B2 (en) * 2006-08-28 2010-10-19 Atmel Corporation Stackable packages for three-dimensional packaging of semiconductor dice
JP5378643B2 (ja) * 2006-09-29 2013-12-25 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US7687893B2 (en) 2006-12-27 2010-03-30 Amkor Technology, Inc. Semiconductor package having leadframe with exposed anchor pads
US8178982B2 (en) 2006-12-30 2012-05-15 Stats Chippac Ltd. Dual molded multi-chip package system
US7829990B1 (en) 2007-01-18 2010-11-09 Amkor Technology, Inc. Stackable semiconductor package including laminate interposer
US20080185695A1 (en) * 2007-02-07 2008-08-07 Kim Hong Hyoun Package-on-package device and method for manufacturing the same by using a leadframe
US7982297B1 (en) 2007-03-06 2011-07-19 Amkor Technology, Inc. Stackable semiconductor package having partially exposed semiconductor die and method of fabricating the same
US8106491B2 (en) 2007-05-16 2012-01-31 Micron Technology, Inc. Methods of forming stacked semiconductor devices with a leadframe and associated assemblies
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
US7956453B1 (en) 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US7723852B1 (en) 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
US7768135B1 (en) 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
JP5149694B2 (ja) * 2008-05-15 2013-02-20 スパンション エルエルシー 半導体装置及びその製造方法
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US8487420B1 (en) 2008-12-08 2013-07-16 Amkor Technology, Inc. Package in package semiconductor device with film over wire
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
US8766428B2 (en) * 2009-12-02 2014-07-01 Stats Chippac Ltd. Integrated circuit packaging system with flip chip and method of manufacture thereof
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
TWI490117B (zh) * 2010-11-24 2015-07-01 Nat Univ Tsing Hua 具氮化鋁薄膜之熱擴散元件及其製作方法
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8674485B1 (en) 2010-12-08 2014-03-18 Amkor Technology, Inc. Semiconductor device including leadframe with downsets
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
US8552567B2 (en) 2011-07-27 2013-10-08 Micron Technology, Inc. Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication
US8937309B2 (en) 2011-08-08 2015-01-20 Micron Technology, Inc. Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication
KR101209475B1 (ko) 2011-08-11 2012-12-07 앰코 테크놀로지 코리아 주식회사 인터포져를 이용한 반도체 패키지
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9704725B1 (en) 2012-03-06 2017-07-11 Amkor Technology, Inc. Semiconductor device with leadframe configured to facilitate reduced burr formation
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
KR20140078223A (ko) * 2012-12-17 2014-06-25 하나 마이크론(주) 반도체 패키지
CN104769713B (zh) 2013-01-09 2017-12-12 晟碟半导体(上海)有限公司 包括用于嵌入和/或隔开半导体裸芯的独立膜层的半导体器件
KR101486790B1 (ko) 2013-05-02 2015-01-28 앰코 테크놀로지 코리아 주식회사 강성보강부를 갖는 마이크로 리드프레임
KR101563911B1 (ko) 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9673122B2 (en) 2014-05-02 2017-06-06 Amkor Technology, Inc. Micro lead frame structure having reinforcing portions and method
CN105405823A (zh) * 2014-08-20 2016-03-16 飞思卡尔半导体公司 具有可检查的焊接点的半导体装置
EP3439148B1 (en) 2017-08-02 2020-09-30 Nidec ASI S.p.A. Connector assembly for electric motor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194548A (ja) * 1984-03-16 1985-10-03 Nec Corp チツプキヤリヤ
JPH0456262A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp 半導体集積回路装置
US5172303A (en) * 1990-11-23 1992-12-15 Motorola, Inc. Electronic component assembly
US5247423A (en) * 1992-05-26 1993-09-21 Motorola, Inc. Stacking three dimensional leadless multi-chip module and method for making the same
KR970000214B1 (ko) * 1993-11-18 1997-01-06 삼성전자 주식회사 반도체 장치 및 그 제조방법
US5642261A (en) 1993-12-20 1997-06-24 Sgs-Thomson Microelectronics, Inc. Ball-grid-array integrated circuit package with solder-connected thermal conductor
US5739581A (en) * 1995-11-17 1998-04-14 National Semiconductor Corporation High density integrated circuit package assembly with a heatsink between stacked dies
KR100206893B1 (ko) * 1996-03-11 1999-07-01 구본준 반도체 패키지 및 그 제조방법
JPH09260568A (ja) * 1996-03-27 1997-10-03 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR0179921B1 (ko) * 1996-05-17 1999-03-20 문정환 적측형 반도체 패키지
US5773884A (en) * 1996-06-27 1998-06-30 International Business Machines Corporation Electronic package with thermally conductive support member having a thin circuitized substrate and semiconductor device bonded thereto
US5748452A (en) * 1996-07-23 1998-05-05 International Business Machines Corporation Multi-electronic device package
WO1998033217A1 (en) 1997-01-24 1998-07-30 Rohm Co., Ltd. Semiconductor device and method for manufacturing thereof
KR100280398B1 (ko) * 1997-09-12 2001-02-01 김영환 적층형 반도체 패키지 모듈의 제조 방법
JP3644662B2 (ja) * 1997-10-29 2005-05-11 株式会社ルネサステクノロジ 半導体モジュール
KR100266637B1 (ko) * 1997-11-15 2000-09-15 김영환 적층형볼그리드어레이반도체패키지및그의제조방법
US6013877A (en) * 1998-03-12 2000-01-11 Lucent Technologies Inc. Solder bonding printed circuit boards
US6297550B1 (en) * 1998-04-01 2001-10-02 Lsi Logic Corporation Bondable anodized aluminum heatspreader for semiconductor packages
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
KR100302593B1 (ko) * 1998-10-24 2001-09-22 김영환 반도체패키지및그제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101530688B1 (ko) * 2007-06-27 2015-06-22 스태츠 칩팩 엘티디 비접착 패키지 부착에 의한 집적 회로 패키지-인-패키지시스템

Also Published As

Publication number Publication date
JP2000133767A (ja) 2000-05-12
JP4400965B2 (ja) 2010-01-20
KR100302593B1 (ko) 2001-09-22
US20020022300A1 (en) 2002-02-21
US6500698B2 (en) 2002-12-31
US6339255B1 (en) 2002-01-15

Similar Documents

Publication Publication Date Title
KR100302593B1 (ko) 반도체패키지및그제조방법
US5065281A (en) Molded integrated circuit package incorporating heat sink
US5783861A (en) Semiconductor package and lead frame
US7008824B2 (en) Method of fabricating mounted multiple semiconductor dies in a package
US8018055B2 (en) Semiconductor apparatus with decoupling capacitor
US5615089A (en) BGA semiconductor device including a plurality of semiconductor chips located on upper and lower surfaces of a first substrate
KR950030323A (ko) 반도체 장치와 반도체 장치의 생산방법 및 반도체 모듈
US6534344B2 (en) Integrated circuit chip and method for fabricating the same
KR20010056618A (ko) 반도체패키지
KR20010037246A (ko) 리드프레임 및 이를 이용한 반도체패키지
KR100235498B1 (ko) 반도체 패키지
KR0129198B1 (ko) 반도체 패키지
KR100206973B1 (ko) 칩 사이즈 패키지
KR100216065B1 (ko) 멀티 리드 온 칩 패키지
KR0124827Y1 (ko) 기판실장형 반도체 패키지
KR19990026232U (ko) 멀티 칩 세라믹 패키지
KR100431315B1 (ko) 반도체패키지및그제조방법
KR950013049B1 (ko) 다중-칩 리드온칩(loc) 구조를 갖는 반도체 패키지
KR0179922B1 (ko) 직립형 패키지
KR20000014539U (ko) 반도체 패키지
KR19980063639U (ko) 스택 패키지
JPH01228156A (ja) 混成集積回路装置
KR20010056617A (ko) 반도체패키지
KR20000001597A (ko) 반도체 패키지
KR19980054912A (ko) 반도체 패키지의 구조 및 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130624

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20140623

Year of fee payment: 14

FPAY Annual fee payment

Payment date: 20150623

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20160621

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20170620

Year of fee payment: 17

LAPS Lapse due to unpaid annual fee