KR19980063871A - 세라믹 조성물 및 이 세라믹 조성물로 제조된 적층 세라믹커패시터 - Google Patents
세라믹 조성물 및 이 세라믹 조성물로 제조된 적층 세라믹커패시터 Download PDFInfo
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- KR19980063871A KR19980063871A KR1019970066472A KR19970066472A KR19980063871A KR 19980063871 A KR19980063871 A KR 19980063871A KR 1019970066472 A KR1019970066472 A KR 1019970066472A KR 19970066472 A KR19970066472 A KR 19970066472A KR 19980063871 A KR19980063871 A KR 19980063871A
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- oxide
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- multilayer ceramic
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 55
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000000919 ceramic Substances 0.000 title claims description 75
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 37
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 27
- 239000000075 oxide glass Substances 0.000 claims abstract description 23
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 8
- 235000012054 meals Nutrition 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- 238000007747 plating Methods 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 23
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 16
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 16
- 229910002113 barium titanate Inorganic materials 0.000 claims description 15
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011572 manganese Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 8
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 8
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims description 8
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 8
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 claims description 8
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 claims description 8
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 8
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 8
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 8
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 8
- 229940075624 ytterbium oxide Drugs 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- -1 terboom oxide Chemical compound 0.000 claims description 6
- 238000009413 insulation Methods 0.000 description 31
- 229910010293 ceramic material Inorganic materials 0.000 description 25
- 239000012298 atmosphere Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000010304 firing Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 150000002843 nonmetals Chemical class 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910003451 terbium oxide Inorganic materials 0.000 description 2
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- YWJHUQQPWSXFTC-UHFFFAOYSA-H barium(2+) oxalate titanium(4+) Chemical compound [Ti+4].[Ba++].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O YWJHUQQPWSXFTC-UHFFFAOYSA-H 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
BaTiO3의 종류 | 불순물 함유량(중량%) | 평균입자직경(㎛) | ||||
알칼리 금속 산화물 | SrO | CaO | SiO2 | Al2O3 | ||
A | 0.003 | 0.012 | 0.001 | 0.010 | 0.005 | 0.60 |
B | 0.020 | 0.010 | 0.003 | 0.019 | 0.008 | 0.56 |
C | 0.012 | 0.179 | 0.018 | 0.155 | 0.071 | 0.72 |
D | 0.062 | 0.014 | 0.001 | 0.019 | 0.004 | 0.58 |
시료번호 | (1-α-β){BaO}m·TiO2+αRe2O3+β(Mn1-x-yNixCoy)O | MgO(몰) | 산화물유리(중량부) | ||||||||||||
BaTiO3의종류 | Re | α | β | x | y | β/α | m | ||||||||
Y | Tb | Dy | Ho | Er | Yb | ||||||||||
1* | A | - | - | - | - | - | - | - | 0.0100 | 0.4 | 0.4 | - | 1.010 | 1.00 | 0.80 |
2* | A | - | - | 0.010 | - | 0.0025 | - | 0.0125 | - | - | - | - | 1.010 | 1.00 | 0.80 |
3* | A | - | - | 0.010 | - | 0.0025 | - | 0.0125 | 0.0100 | 0.4 | 0.4 | 4/5 | 0.990 | 1.00 | 0.80 |
4* | A | 0.0125 | - | - | - | - | - | 0.0125 | 0.0100 | 0.4 | 0.4 | 4/5 | 1.000 | 1.00 | 0.80 |
5* | A | - | 0.0075 | 0.0050 | - | - | - | 0.0125 | 0.0125 | 0.4 | 0.4 | 1 | 1.010 | - | 0.80 |
6* | A | - | - | 0.010 | - | - | - | 0.0100 | 0.0100 | 0.4 | 0.4 | 1 | 1.010 | 1.00 | - |
7 | A | - | - | 0.0025 | - | - | - | 0.0025 | 0.0025 | 0.3 | 0.2 | 1 | 1.005 | 0.50 | 0.20 |
8 | A | - | 0.0050 | 0.0050 | - | - | - | 0.0100 | 0.0120 | 0.3 | 0.2 | 6/5 | 1.010 | 1.00 | 0.80 |
9 | A | - | 0.0075 | - | - | - | 0.0050 | 0.0125 | 0.0075 | - | 0.9 | 3/5 | 1.010 | 2.00 | 0.80 |
10 | A | 0.0010 | - | 0.0080 | - | - | - | 0.0090 | 0.0100 | 0.2 | 0.6 | 10/9 | 1.015 | 1.50 | 1.00 |
11 | A | 0.0040 | - | 0.0040 | - | - | - | 0.0080 | 0.0080 | 0.9 | - | 1 | 1.010 | 1.50 | 1.00 |
12 | C | - | - | 0.0150 | 0.0100 | - | - | 0.0250 | 0.0500 | 0.5 | 0.4 | 2 | 1.005 | 1.00 | 2.00 |
13 | B | - | 0.0030 | - | - | - | - | 0.0030 | 0.0030 | 0.4 | 0.5 | 1 | 1.010 | 3.00 | 3.00 |
14 | A | - | - | 0.0100 | - | - | - | 0.0100 | 0.0050 | - | - | 1/2 | 1.010 | 1.00 | 1.00 |
15 | A | 0.0040 | - | 0.0020 | - | - | - | 0.0060 | 0.0240 | 0.4 | 0.4 | 4 | 1.035 | 0.10 | 1.50 |
16 | A | - | - | 0.0080 | - | 0.0120 | - | 0.0200 | 0.0040 | 0.2 | 0.4 | 1/5 | 1.015 | 2.00 | 1.00 |
17* | A | - | - | - | 0.0100 | - | 0.0200 | 0.0300 | 0.0150 | 0.4 | 0.4 | 1/2 | 1.010 | 2.00 | 1.00 |
18* | A | - | - | 0.0100 | 0.0100 | - | - | 0.0200 | 0.0800 | 0.4 | 0.4 | 4 | 1.010 | 1.00 | 0.80 |
19* | A | - | - | 0.0100 | - | - | - | 0.0100 | 0.0100 | 1.0 | - | 1 | 1.010 | 1.00 | 0.80 |
20* | A | 0.0100 | - | - | - | - | - | 0.0100 | 0.0100 | - | 1.0 | 1 | 1.010 | 1.00 | 0.80 |
21* | A | - | - | 0.0050 | - | - | - | 0.0050 | 0.0500 | 0.3 | 0.3 | 10 | 1.010 | 1.00 | 0.80 |
22* | A | 0.0100 | - | - | - | - | - | 0.0100 | 0.0050 | 0.3 | 0.3 | 1/2 | 1.050 | 1.00 | 1.00 |
23* | A | 0.0100 | - | - | - | - | - | 0.0100 | 0.0050 | 0.3 | 0.3 | 1/2 | 1.010 | 5.00 | 1.50 |
24* | A | - | - | - | 0.0100 | - | - | 0.0100 | 0.0050 | 0.3 | 0.3 | 1/2 | 1.010 | 1.00 | 5.00 |
25* | D | - | - | 0.0100 | - | - | - | 0.0100 | 0.0050 | 0.3 | 0.3 | 1/2 | 1.010 | 1.00 | 0.80 |
시료번호 | 소성온도(℃) | 유전율(ε) | 유전체 손실tan δ(%) | 용량온도 변화율(%) | CR 적(㏁·㎌) | 평균수명시간(hr) | 그레인 크기(㎛) | |||||||
2.0㎸/㎜ 인가 | 20㎸/㎜ 인가 | |||||||||||||
ΔC/C20℃ | ΔC/25℃ | 25℃ | 125℃ | 25℃ | 125℃ | |||||||||
-25℃ | 85℃ | -55℃ | 125℃ | max | ||||||||||
1* | 1280 | 2790 | 2.5 | -11.3 | -2.5 | -16.2 | -4.2 | 16.2 | 8220 | 1670 | 6750 | 270 | 6 | 0.87 |
2* | 1280 | 반도체화되어 측정불능 | 2.2 | |||||||||||
3* | 1280 | 반도체화되어 측정불능 | 1.9 | |||||||||||
4* | 1280 | 3390 | 2.0 | -2.6 | -5.9 | -2.8 | -7.2 | 7.2 | 4350 | 670 | 590 | 90 | 123 | 0.73 |
5* | 1280 | 3370 | 1.9 | -0.8 | -9.8 | -0.2 | -16.1 | 16.1 | 6270 | 2090 | 1720 | 150 | 396 | 0.77 |
6* | 1360 | 소결부족으로 측정불능 | 0.61 | |||||||||||
7 | 1300 | 4100 | 2.5 | -5.7 | -7.0 | -9.8 | -13.3 | 13.3 | 7550 | 5250 | 4810 | 550 | 519 | 0.71 |
8 | 1280 | 3420 | 2.0 | -1.8 | -5.7 | -2.0 | -7.4 | 7.6 | 6470 | 2880 | 2920 | 630 | 626 | 0.70 |
9 | 1300 | 3140 | 1.7 | -0.8 | -7.6 | -1.0 | -8.9 | 8.9 | 6230 | 3030 | 2580 | 790 | 642 | 0.69 |
10 | 1280 | 3430 | 1.9 | -0.7 | -6.8 | -1.1 | -7.7 | 8.0 | 6400 | 3110 | 2690 | 770 | 677 | 0.70 |
11 | 1280 | 3490 | 1.8 | -0.9 | -6.2 | -1.0 | -7.4 | 7.4 | 6260 | 2580 | 2130 | 590 | 578 | 0.71 |
12 | 1300 | 3030 | 1.6 | -2.4 | -5.0 | -2.5 | -5.3 | 5.4 | 6070 | 2780 | 2600 | 770 | 608 | 0.79 |
13 | 1260 | 3450 | 2.3 | -5.5 | -6.3 | -8.2 | -12.4 | 12.4 | 6970 | 4320 | 3980 | 570 | 536 | 0.61 |
14 | 1280 | 3270 | 1.8 | -0.7 | -6.9 | -1.2 | -7.8 | 7.8 | 6460 | 2650 | 2680 | 860 | 740 | 0.69 |
15 | 1300 | 3190 | 1.8 | -2.5 | -5.9 | -2.7 | -6.6 | 6.7 | 6670 | 2190 | 3030 | 600 | 565 | 0.67 |
16 | 1300 | 3090 | 1.6 | -1.8 | -5.2 | -2.1 | -4.9 | 5.5 | 6040 | 2080 | 2060 | 670 | 659 | 0.68 |
17* | 1360 | 2280 | 1.9 | -2.0 | -5.2 | -2.3 | -3.8 | 5.6 | 2560 | 850 | 890 | 260 | 279 | 0.64 |
18* | 1360 | 3050 | 2.0 | -0.7 | -9.8 | -0.2 | -17.2 | 17.2 | 5410 | 390 | 2440 | 90 | 55 | 0.69 |
19* | 1280 | 3440 | 1.9 | -1.7 | -5.9 | -1.0 | -7.3 | 7.3 | 2550 | 200 | 1000 | 110 | 114 | 0.73 |
20* | 1280 | 3270 | 1.7 | -2.3 | -5.0 | -1.5 | -5.4 | 5.6 | 3490 | 280 | 1030 | 140 | 162 | 0.73 |
21* | 1280 | 3580 | 2.2 | 0.8 | -11.5 | -0.7 | -18.0 | 18.0 | 6490 | 1770 | 2980 | 290 | 309 | 0.74 |
22* | 1360 | 소결부족으로 측정불능 | 0.61 | |||||||||||
23* | 1360 | 2140 | 1.5 | -2.0 | -3.1 | -2.9 | 3.6 | 3.9 | 6160 | 2180 | 3030 | 560 | 430 | 0.64 |
24* | 1200 | 1940 | 1.3 | -1.2 | -2.3 | -1.3 | 5.6 | 5.2 | 5200 | 3370 | 3650 | 1830 | 482 | 0.69 |
25* | 1280 | 2600 | 1.5 | -2.1 | -5.0 | -2.3 | -6.8 | 6.8 | 7120 | 2980 | 3630 | 642 | 675 | 0.67 |
산화물유리(중량%) | 산화물 유리의 성분(몰%) | |||||||||
Al2O3 | M | MO | B2O3 | |||||||
Ba | Ca | Sr | Mg | Zn | Mn | |||||
26 | 1.0 | 1 | 5 | 5 | - | - | - | 4 | 14 | 85 |
27 | 1.0 | 20 | 8 | - | - | - | 2 | - | 10 | 70 |
28 | 1.0 | 30 | 6 | 10 | 2 | 2 | - | - | 20 | 50 |
29 | 1.0 | 40 | - | 30 | - | - | 5 | 15 | 50 | 10 |
30 | 1.0 | 20 | - | 30 | - | - | 10 | 30 | 70 | 10 |
31 | 1.0 | 1 | - | 5 | 5 | 24 | 5 | - | 39 | 60 |
32 | 1.0 | 15 | 10 | - | - | - | 3 | 2 | 15 | 70 |
33 | 1.0 | 10 | 10 | 15 | - | 5 | - | 5 | 35 | 55 |
34 | 1.0 | 20 | - | 30 | 5 | - | 3 | 2 | 40 | 40 |
35 | 1.0 | 30 | 5 | 35 | 5 | - | 5 | - | 50 | 20 |
36* | 1.0 | 10 | 5 | - | - | - | - | - | 5 | 85 |
37* | 1.0 | 30 | 5 | 5 | - | - | - | - | 10 | 60 |
38* | 1.0 | 40 | 20 | - | - | - | 3 | 2 | 25 | 35 |
39* | 1.0 | 60 | 30 | - | - | - | 3 | 2 | 35 | 5 |
40* | 1.0 | 5 | 15 | 35 | 10 | - | 3 | 2 | 65 | 30 |
41* | 1.0 | - | 15 | 15 | - | - | - | - | 30 | 70 |
시료번호 | 소성온도(℃) | 유전율(ε) | 유전체 손실tan δ(%) | 용량온도 변화율(%) | CR적(20㎸/㎜ 인가)(㏁·㎌) | |||||||
ΔC/C20℃ | ΔC/C25℃ | 도금처리전 | 도금처리후 | |||||||||
-25℃ | 85℃ | -55℃ | 125℃ | max | 25℃ | 125℃ | 25℃ | 125℃ | ||||
26 | 1260 | 3090 | 1.7 | -1.0 | -6.6 | -1.5 | -7.4 | 7.5 | 2650 | 850 | 2630 | 830 |
27 | 1260 | 3250 | 1.8 | -0.7 | -6.8 | -1.3 | -7.7 | 7.7 | 2590 | 770 | 2580 | 770 |
28 | 1280 | 3370 | 1.8 | -0.3 | -7.5 | -0.2 | -9.5 | 9.7 | 2790 | 810 | 2790 | 810 |
29 | 1300 | 3460 | 2.0 | -0.3 | -7.9 | -0.1 | -11.2 | 11.2 | 3290 | 1010 | 3290 | 1010 |
30 | 1300 | 3340 | 1.9 | -0.5 | -7.1 | -0.9 | -8.3 | 8.3 | 2610 | 780 | 2610 | 770 |
31 | 1280 | 3180 | 1.8 | -1.0 | -6.7 | -1.0 | -7.3 | 7.5 | 2660 | 770 | 2660 | 770 |
32 | 1260 | 3190 | 1.7 | -1.2 | -6.3 | -1.4 | -6.9 | 7.0 | 2580 | 780 | 2560 | 760 |
33 | 1280 | 3310 | 1.8 | -0.7 | -7.3 | -0.5 | -8.2 | 8.5 | 2770 | 750 | 2770 | 750 |
34 | 1300 | 3280 | 1.9 | -0.6 | -7.0 | -1.2 | -7.9 | 8.0 | 2750 | 820 | 2750 | 800 |
35 | 1280 | 3530 | 2.0 | -0.2 | -7.8 | -0.1 | -11.8 | 11.8 | 3150 | 940 | 3150 | 940 |
36* | 1360 | 3370 | 2.6 | -1.8 | -5.0 | -2.1 | -6.1 | 6.3 | 1070 | 130 | 60 | 5 |
37* | 1360 | 소결부족으로 측정불능 | ||||||||||
38* | 1360 | 소결부족으로 측정불능 | ||||||||||
39* | 1360 | 3930 | 2.8 | -10.3 | -8.9 | -14.8 | -16.9 | 21.0 | 2030 | 390 | 110 | 30 |
40* | 1360 | 소결부족으로 측정불능 | ||||||||||
41* | 1260 | 3070 | 1.7 | -1.8 | -5.9 | -2.1 | -6.4 | 6.4 | 2250 | 580 | 680 | 140 |
Claims (6)
- 다수의 유전체 세라믹층;상기한 세라믹층의 각 모서리가 상기한 유전체 세라믹층의 양단면에 노출되도록 상기한 유전체 세라믹층들의 사이에 형성되는 다수의 내부전극; 및상기한 노출된 다수의 내부전극에 전기적으로 접속되는 외부전극을 포함하는 적층 세라믹 커패시터로서,상기한 유전체 세라믹층은, 불순물로서 알칼리 금속 산화물을 0.02중량% 이하 함유한 티탄산바륨, 산화이트륨, 산화테르붐, 산화디스프로슘, 산화홀뮴, 산화에르븀 및 산화이테르븀으로 이루어진 군으로부터 선택된 적어도 1종, 및 산화망간, 산화코발트 및 산화니켈로 이루어진 군으로부터 선택된 적어도 1종으로 이루어지며; 하기의 화학식 5의 조성:
(1-α-β){BaO}m·TiO2+ αRe2O3+ β(Mn1-x-yNixCoy)O (식중에서,Re2O3는 Y2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3및 Yb2O3로 이루어진 군으로부터 선택된 적어도 1종이며;α, β, m, x 및 y는 다음과 같다.0.0025 ≤ α ≤ 0.0250.0025 ≤ β ≤ 0.05β/α ≤ 40 ≤ x < 1.00 ≤ y < 1.00 ≤ x + y < 1.01.000 < m ≤ 1.035을 갖는 주성분 100몰에 대하여, 제 2 성분으로서 산화 마그네슘을 MgO로 환산하여 0.1∼3.0몰의 양으로 함유하며;상기한 적층 세라믹 커패시터는 상기한 주성분과 상기한 산화마그네슘의 합계 100중량부에 대하여, Al2O3-MO-B2O3계(MO는 BaO, CaO, SrO, MgO, ZnO 및 MnO에서 선택된 적어도 1종의 산화물이다)의 산화물 유리를 0.2∼3.0중량부의 양으로 함유하는 재료로 구성되며;상기한 내부전극들은 니켈이나 니켈합금으로 구성되는 것을 특징으로 하는 적층 세라믹 커패시터. - 제 1항에 있어서, 상기한 Al2O3-MO-B2O3계(MO는 BaO, CaO, SrO, MgO, ZnO 및 MnO에서 선택된 적어도 1종의 산화물이다)의 산화물유리가, {Al2O3, MO, B2O3}의 삼각도(단위: 몰%)로 형성될 때, 하기에 한정된A (1, 14, 85)B (20, 10, 70)C (30, 20, 50)D (40, 50, 10)E (20, 70, 10)F (1, 39, 60)의 6개의 점을 연결한 6개의 직선으로 둘러싸인 영역 내부와 그 직선 상에 있는 것을 특징으로 하는 적층 세라믹 커패시터.
- 제 1항 또는 제 2항에 있어서, 상기한 외부전극이 도전성 금속분말 또는 유리 프릿(glass frit)을 첨가한 도전성 금속분말의 소결층으로 구성되는 것을 특징으로 하는 적층 세라믹 커패시터.
- 제 1항 또는 제 2항에 있어서, 상기한 외부전극이 도전성 금속분말 또는 유리프릿을 첨가한 도전성 금속분말의 소결층으로 구성된 상기한 제 1 층과, 상기한 제 1층 상에 형성된 도금층으로 된 제 2 층으로 구성되는 것을 특징으로 하는 적층 세라믹 커패시터.
- 불순물로서 알칼리 금속 산화물을 0.02중량% 이하 함유한 티탄산바륨;산화이트륨, 산화테르붐, 산화디스프로슘, 산화홀뮴, 산화에르븀 및 산화이테르븀으로 이루어진 군으로부터 선택된 적어도 1종; 및산화 망간, 산화 코발트 및 산화 니켈로 이루어진 군으로부터 선택된 적어도 1종을 함유하는 세라믹 조성물로서,하기의 화학식 6의 조성:
(1-α-β){BaO}m·TiO2+ αRe2O3+ β(Mn1-x-yNixCoy)O (식중에서,Re2O3는 Y2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3및 Yb2O3로 이루어진 군으로부터 선택된 적어도 1종이며;α, β, m, x 및 y는 다음과 같다.0.0025 ≤ α ≤ 0.0250.0025 ≤ β ≤ 0.05β/α ≤ 40 ≤ x < 1.00 ≤ y < 1.00 ≤ x + y < 1.01.000 < m ≤ 1.035을 갖는 주성분 100몰에 대하여, 상기한 유전체 세라믹층은 제 2 성분으로서 산화마그네슘을 MgO로 환산하여 약 0.1∼3.0몰의 양으로 함유하며;상기한 주성분과 상기한 산화마그네슘의 합계 100중량부에 대하여, Al2O3-MO-B2O3계(MO는 BaO, CaO, SrO, MgO, ZnO 및 MnO에서 선택된 적어도 1종의 산화물이다)의 산화물 유리를 0.2∼3.0중량부의 양으로 함유하는 재료를 포함함을 특징으로 하는 세라믹 조성물. - 제 5항에 있어서, 상기한 Al2O3-MO-B2O3계(MO는 BaO, CaO, SrO, MgO, ZnO 및 MnO에서 선택된 적어도 1종의 산화물이다)의 산화물유리가 {Al2O3, MO, B2O3}의 삼각도(단위: 몰%)로 형성될 때, 하기에 한정된A (1, 14, 85)B (20, 10, 70)C (30, 20, 50)D (40, 50, 10)E (20, 70, 10)F (1, 39, 60)의 6개의 점을 연결한 6개의 직선으로 둘러싸인 영역 내부와 그 직선 상에 있는 것을 특징으로 하는 세라믹 조성물.
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Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3039409B2 (ja) * | 1997-01-08 | 2000-05-08 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3644235B2 (ja) * | 1998-03-03 | 2005-04-27 | 株式会社村田製作所 | 積層セラミック電子部品 |
JP3709914B2 (ja) * | 1998-08-11 | 2005-10-26 | 株式会社村田製作所 | 積層セラミックコンデンサ |
EP1048042A1 (en) * | 1998-09-02 | 2000-11-02 | Koninklijke Philips Electronics N.V. | Thin-film capacitor |
JP4423707B2 (ja) * | 1999-07-22 | 2010-03-03 | Tdk株式会社 | 積層セラミック電子部品の製造方法 |
DE10043882B4 (de) * | 1999-09-07 | 2009-11-05 | Murata Mfg. Co., Ltd., Nagaokakyo-shi | Dielektrische Keramikzusammensetzung und monolithisches Keramikbauteil |
US6262877B1 (en) * | 1999-11-23 | 2001-07-17 | Intel Corporation | Low inductance high capacitance capacitor and method of making same |
JP3391322B2 (ja) * | 1999-12-10 | 2003-03-31 | 株式会社村田製作所 | 積層コンデンサ及びその製造方法 |
JP2001307947A (ja) * | 2000-04-25 | 2001-11-02 | Tdk Corp | 積層チップ部品及びその製造方法 |
DE10026260B4 (de) * | 2000-05-26 | 2004-03-25 | Epcos Ag | Keramisches Bauelement und dessen Verwendung sowie Verfahren zur galvanischen Erzeugung von Kontaktschichten auf einem keramischen Grundkörper |
US6556422B2 (en) | 2000-07-05 | 2003-04-29 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition, multi-layer ceramic capacitor using the same, and manufacturing method therefor |
JP3452033B2 (ja) * | 2000-07-05 | 2003-09-29 | 株式会社村田製作所 | 導電性ペーストおよび積層セラミック電子部品 |
JP2002164247A (ja) * | 2000-11-24 | 2002-06-07 | Murata Mfg Co Ltd | 誘電体セラミック組成物および積層セラミックコンデンサ |
US6673274B2 (en) | 2001-04-11 | 2004-01-06 | Cabot Corporation | Dielectric compositions and methods to form the same |
US6809052B2 (en) | 2002-01-15 | 2004-10-26 | Tdk Corporation | Dielectric ceramic composition and electronic device |
JP4506084B2 (ja) * | 2002-04-16 | 2010-07-21 | 株式会社村田製作所 | 非還元性誘電体セラミックおよびその製造方法ならびに積層セラミックコンデンサ |
EP1594146A4 (en) * | 2003-02-05 | 2010-01-06 | Tdk Corp | ELECTRONIC PARTS AND METHOD OF MANUFACTURING THE SAME |
TWI246095B (en) * | 2004-02-27 | 2005-12-21 | Murata Manufacturing Co | Multilayer ceramic electronic component and method of manufacturing thereof |
US7339780B2 (en) * | 2004-06-09 | 2008-03-04 | Ferro Corporation | Copper termination inks containing lead free and cadmium free glasses for capacitors |
JP4513981B2 (ja) * | 2005-03-31 | 2010-07-28 | Tdk株式会社 | 積層セラミック電子部品及びその製造方法 |
DE102006017796A1 (de) * | 2006-04-18 | 2007-10-25 | Epcos Ag | Elektrisches Kaltleiter-Bauelement |
DE102007026243A1 (de) * | 2007-06-04 | 2008-12-11 | Endress + Hauser Gmbh + Co. Kg | Kapazitiver Drucksensor |
JP5025570B2 (ja) * | 2008-04-24 | 2012-09-12 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP4831142B2 (ja) * | 2008-07-18 | 2011-12-07 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
JP5245611B2 (ja) * | 2008-07-28 | 2013-07-24 | 株式会社村田製作所 | 積層セラミック電子部品およびその製造方法 |
CN101607819B (zh) * | 2009-07-17 | 2012-01-25 | 苏州达方电子有限公司 | 介电陶瓷组合物及其所制成的积层陶瓷电容器 |
CN101607820B (zh) * | 2009-07-23 | 2012-05-09 | 苏州达方电子有限公司 | 陶瓷粉体组合物、陶瓷材料及其所制成的积层陶瓷电容器 |
CN101671170B (zh) * | 2009-09-18 | 2012-05-09 | 苏州达方电子有限公司 | 陶瓷粉体组合物、陶瓷材料及其所制成的积层陶瓷电容器 |
CN101805180B (zh) * | 2010-03-03 | 2012-12-12 | 苏州达方电子有限公司 | 陶瓷粉体组合物、陶瓷材料及其所制成的积层陶瓷电容器 |
CN102115323A (zh) * | 2010-12-24 | 2011-07-06 | 费金华 | 一种掺杂改性钛酸钡基陶瓷电容器材料 |
KR101383253B1 (ko) | 2012-04-19 | 2014-04-10 | 삼화콘덴서공업주식회사 | 적층세라믹커패시터의 내부전극용 금속페이스트 제조방법 |
US20160022154A1 (en) * | 2013-03-12 | 2016-01-28 | Guided Interventions, Inc. | System including guidewire for detecting fluid pressure |
US9881739B2 (en) * | 2014-09-30 | 2018-01-30 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor |
KR101731452B1 (ko) | 2015-08-26 | 2017-04-28 | 삼화콘덴서공업주식회사 | 고전압 적층 세라믹 커패시터 및 그의 제조방법 |
JP6570478B2 (ja) * | 2016-05-31 | 2019-09-04 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
CN106316389B (zh) * | 2016-08-05 | 2019-06-28 | 聊城大学 | 一种低电场驱动下的高电致应变无铅压电材料及制备方法 |
JP2018098327A (ja) * | 2016-12-13 | 2018-06-21 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
CN108249915B (zh) * | 2016-12-28 | 2021-04-16 | Tdk株式会社 | 电介质组合物及电子部件 |
JP6996945B2 (ja) * | 2017-11-07 | 2022-01-17 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
KR102076153B1 (ko) * | 2018-05-02 | 2020-02-11 | 삼성전기주식회사 | 적층형 커패시터 |
KR102222944B1 (ko) * | 2019-02-01 | 2021-03-05 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
KR102533750B1 (ko) | 2021-06-22 | 2023-05-18 | 삼화콘덴서공업 주식회사 | 적층 세라믹 커패시터의 외부전극용 도전성 페이스트 조성물 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574329A (en) * | 1983-10-07 | 1986-03-04 | U.S. Philips Corporation | Multilayer ceramic capacitor |
DE3476993D1 (en) * | 1983-11-30 | 1989-04-13 | Taiyo Yuden Kk | Low temperature sintered ceramic materials for use in soliddielectric capacitors or the like, and method of manufacture |
JPH0817054B2 (ja) * | 1989-02-23 | 1996-02-21 | 株式会社村田製作所 | 誘電体磁器組成物 |
JP2800017B2 (ja) * | 1989-04-05 | 1998-09-21 | 株式会社村田製作所 | 積層セラミックスコンデンサ |
JPH0650701B2 (ja) * | 1989-05-18 | 1994-06-29 | 松下電器産業株式会社 | 積層コンデンサ素子とその製造方法 |
DE4220681C2 (de) * | 1991-06-27 | 1995-09-14 | Murata Manufacturing Co | Nichtreduzierende, dielektrische, keramische Zusammensetzung |
US5659456A (en) * | 1995-01-12 | 1997-08-19 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitors |
JP3024537B2 (ja) * | 1995-12-20 | 2000-03-21 | 株式会社村田製作所 | 積層セラミックコンデンサ |
-
1996
- 1996-12-06 JP JP8326912A patent/JP3039403B2/ja not_active Expired - Lifetime
-
1997
- 1997-12-01 DE DE69720168T patent/DE69720168T2/de not_active Expired - Lifetime
- 1997-12-01 EP EP97121058A patent/EP0851444B1/en not_active Expired - Lifetime
- 1997-12-05 US US08/985,825 patent/US5877934A/en not_active Expired - Lifetime
- 1997-12-05 CN CN97114196A patent/CN1111883C/zh not_active Expired - Lifetime
- 1997-12-06 KR KR1019970066472A patent/KR100271726B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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DE69720168D1 (de) | 2003-04-30 |
JP3039403B2 (ja) | 2000-05-08 |
CN1186315A (zh) | 1998-07-01 |
KR100271726B1 (ko) | 2000-11-15 |
EP0851444A2 (en) | 1998-07-01 |
JPH10172856A (ja) | 1998-06-26 |
EP0851444A3 (en) | 1999-01-27 |
CN1111883C (zh) | 2003-06-18 |
US5877934A (en) | 1999-03-02 |
EP0851444B1 (en) | 2003-03-26 |
DE69720168T2 (de) | 2003-10-23 |
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