KR19980025053A - 범프본더 - Google Patents

범프본더 Download PDF

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KR19980025053A
KR19980025053A KR1019970049225A KR19970049225A KR19980025053A KR 19980025053 A KR19980025053 A KR 19980025053A KR 1019970049225 A KR1019970049225 A KR 1019970049225A KR 19970049225 A KR19970049225 A KR 19970049225A KR 19980025053 A KR19980025053 A KR 19980025053A
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South Korea
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bump
removal
adhesive
chip
semiconductor chip
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KR1019970049225A
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KR100459602B1 (ko
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코오이찌 요시다
아키히로 야마모토
타카히로 요네자와
마코토 이마니시
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모리시타 요오이찌
마쓰시타 덴키산교 카부시키가이샤
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Publication of KR19980025053A publication Critical patent/KR19980025053A/ko
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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Abstract

범프(bump)의 형성의 택트(tact)효율의 저하를 최소로 억제하여 불량인 보올(3)을 제거하여 접착하여, 양호한 범프를 형성할 수 있는 범프본더를 제공하는 것을 목적으로 한다. 범프의 형성을 받는 반도체칩(13a,13b)을 규정위치에서 지지하는 접착스테이지(17)에, 상기한 규정위치에 근접한 위치에서 제거하는 접착용 칩(19)을 배치하여, 제거접착용 칩(19)으로 제거본드를 실행하는 것을 특징으로 한다. 이 구성에 의하면, 캐피랄리를 작업위치인 접착스테이지(17)로부터 크게 이동시키지 않더라도 제거접착할 수 있다.

Description

범프본더
본 발명은, 반도체칩을 배선기판에 설치하는 것에 있어서, 반도체칩의 전극 위에 범프를 형성하는 범프본더에 관한 것이다.
반도체칩을 배선기판에 설치하는 장치로서는, 도 3에 표시하는 바와 같이, 반도체칩(13)의 전극(14)과 배선기판의 리드프레임(15)을 Au와이어(16)로 전기접속하는 방법과, 도 9에 표시하는 바와 같이, 반도체칩(4)의 전극(5)에 미리 Au범프(7)를 형성하고, 이 Au범프(7)가 형성된 반도체칩(4)을 도전성 접착제(10)로 배선기판(11)의 전극(12)에 전기접속하는 방법이 있다.
Au와이어(16)로 전기접속하는 장치는 와이어본더라고 불리고 있다. Au범프(7)로 전기접속하는 장치는 범프본더라고 불리고 있다.
도 5와 도 6은 범프본더에 의한 접착상황을 표시하고 있다.
우선, 도 5에 표시하는 바와 같이 캐피랄리(1)를 통하여 인출된 Au와이어(2)의 선단부를 스파크전류로 녹여서 보올(3)을 형성한다. 이 보올(3)을 반도체칩(4)의 전극(5)에, 열과 압력과 동시에 초음파를 작용시켜서 접합한 후에 캐피랄리(1)를 이동시켜서 도 6에 표시하는 바와 같이, 보올(3)의 바로 윗쪽에 Au와이어(2)의 루우프부(6)를 형성한다. 그리고, 이 루우프부(6)를 잔류시켜서 Au와이어(2)를 절단한다.
이렇게 하여 범프본더에 의해서 반도체칩(4)의 모든 전극(5)의 위에, 보올(3)과 루우프부(6)로 이루어지는 범프(7)를 형성한 반도체칩(4)은, 도 7에 표시하는 바와 같이, 표면의 평탄도가 확립된 정형대(8)에서, 모든 범프(7)를 압착하여 범프 높이를 일정하게 정렬하고, 동시에 각 범프(7)의 돌출면을 평탄화 한다.
다음에, 도 8에 표시하는 바와 같이하여 반도체칩(4)의 범프(7)의 주변에 도전성 접착제(10)의 페이스트상 도막을 전사한다. 여기서, 평탄도가 확보된 정형대(9)의 표면 위에는, 에폭시계 수지를 접착제로 하는 도전성 접착제(10)가 일정한 두께로 부설되어 있다. 높이가 정렬된 루우프부(6)를 일괄해서 압접시킨 후에 끌어올리면 모든 범프(7)의 표면 위에 도전성 접착제(10)의 페이스트상 도막이 부착된다.
그리고 도 9에 표시하는 바와 같이, 배선기판(11)에 패턴이 형성되어 있는 복수의 도전막(12)에, 반도체칩(4)의 범프(7)를 위치를 일치시킨 상태에서 도전성 접착제(10)를 개재하여 접합하고 가열하여 도전성 접착제(10)를 열경화시켜서 설치가 완료된다.
범프본더의 경우에는, Au와이어(2)의 선단부에 보올(3)을 미리 형성할 필요가 있기 때문에, 미리 Au와이어(2)의 선단에 보올을 형성하거나, 양호한 범프(7)를 얻기 위해서는 적절한 보올(3)이 될 때까지는 그 불량인 보올(3)을 제거하는 제거접착이 필요하게 된다.
제거접착의 공정은 도 4에 표시하는 바와 같이, 불필요한 와이어나 보올을 캐피랄리 선단에서 굴곡하고, 제거접착용 반도체칩(4)에 접착하며, 소정의 길이로 나온 와이어(2)에 전지(11)로부터 스파크를 일으켜서 보올(3)을 형성한다.
와이어접착의 경우에는 도 3에서 가상선으로 표시하는 리드프레임(15)의 빈 영역(15a)에서 제거접착하여 반도체칩(13)의 전극(14)과 배선기판의 리드프레임(15)을 Au와이어(16)로 전기접속하는 작업을 계속할 수 있는데, 범프본더의 경우에는 표면적이 작은 반도체칩(4)에는, 제거하는 제거접착의 영역을 확보할 수 없는 것이 현실이다.
본 발명은, 범프(7)의 형성의 택트효율의 저하를 최소한으로 억제하여 불필요한 와이어나 불량인 보올(3)을 제거접착하여, 양호한 범프(7)를 형성할 수 있는 범프본더를 제공하는 것을 목적으로 한다.
본 발명의 범프본더는, 범프가 형성되는 반도체칩을 규정위치에서 지지하는 접착스테이지에, 상기한 규정위치에 근접한 위치에 제거접착용 칩을 배치하여, 제거접착용 칩으로 제거접착을 실행하는 것을 특징으로 한다.
본 발명에 의하면, 캐피랄리를 작업위치인 접착스테이지로부터 크게 이동시키지 않더라도 제거접착할 수 있는 범프본더가 얻어진다.
청구범위 제1항에 기재된 범프본더는, 반도체칩을 접착스테이지 상면의 규정위치에서 지지하고, 선단부를 녹여서 보올을 형성한 금속와이어를 캐피랄리에 의해서 상기한 반도체칩의 전극의 위로 이동시켜서 금속와이어의 선단에 형성된 보올을 반도체칩의 전극에 접합하여 범프를 형성하는 범프본더에 있어서, 접착스테이지의 상면에, 또한, 상기한 규정위치에 근접한 위치에 제거접착용 칩을 배치하고, 캐피랄리의 이동을 제어하는 구동제어수단을, 범핑할 때에 접착스테이지 상에 설치된 상기한 제거접착용 칩의 위치에 상기한 캐피랄리를 이동시켜서 제거접착을 실시하도록 구성한 것을 특징으로 한다.
그러므로, 캐피랄리를 작업위치인 접착스테이지로부터 크게 이동시키지 않더라도 제거접착할 수 있어, 택트효율의 저하를 최소한으로 하여 양호한 범프를 반도체칩에 형성할 수 있다.
청구범위 제2항에 기재된 범프본더는, 청구범위 제1항에 있어서, 캐피랄리의 이동을 제어하는 구동제어수단을, 제거접착의 필요성을 판정하여, 제거접착이 필요한 경우에는 범핑할 때에 접착스테이지 상에 설치된 제거접착용 칩의 위치에서 범핑을 실시하여 제거접착을 실행하며, 그 후에 반도체칩의 작업위치로 캐피랄리를 이동시켜서 범핑하도록 구성한 것을 특징으로 한다.
이에 의해서, 연속운전시의 무인화 운전을 도모할 수 있다.
도 1은 본 발명의 실시예의 접착스테이지의 평면을 표시하는 도면이다.
도 2의 A, B, C 및 D는 실시예의 범핑공정을 표시하는 도면이다.
도 3은 와이어본더의 설명도이다.
도 4는 제거접착의 공정을 표시하는 설명도이다.
도 5은 종래의 반도체칩 설치방법에 있어서의 캐피랄리의 선단부에 보올을 형성하는 공정의 설명도이다.
도 6은 범프본더에 있어서의 보올을 반도체칩의 전극패드에 접합하여 보올의 바로 위에 금속와이어의 루우프부를 형성하는 공정의 설명도이다.
도 7은 형성된 범프를 정형대에 압착하는 공정의 설명도이다.
도 8은 범프의 주변에 도전성 접착제의 페이스트상 도막을 반도체칩에 전사하는 공정의 설명도이다.
도 9는 반도체칩을 배선기판의 도전막에 반도체칩을 접합하는 공정의 설명도이다.
이하, 본 발명의 범프본더를 도 1과 도 2에 근거하여 설명한다.
또, 종래예를 표시하는 도 5나 도 6과 동일한 작용을 하는 것에는 동일한 부호를 붙이고 설명한다.
본 발명의 범프본더에서는, 도 1과 도 2의 A에 표시하는 바와 같이, 접착스테이지(17)에는, 범프가 형성되는 반도체칩(13a,13b)을 지지하는 위치에 제1, 제2흡착공(18a,18b)이 형성되어 있다. 또, 접착스테이지(17)에는 제1, 제2흡착공(18a,18b)에 근접하여 제3흡착공(18c)이 형성되어 있다. 제1∼제3흡착공(18a∼18c)은 진공원(眞空源)에 접속되어 있다.
범핑의 개시에 있어서는, 도 2의 B에 표시하는 바와 같이, 접착스테이지(17)의 제3흡착공(18c)의 위치에, 제거접착용 칩으로서의 Al칩(19)이 배치되고 흡착지지되어 있다.
이 상태에서, 접착스테이지(17)의 제1, 제2흡착공(18a,18b)의 앞쪽의 위치에 반도체칩(13a,13b)을 올려놓고, 놓여진 반도체칩(13a,13b)을 도 2의 C에 표시하는 바와 같이, 판상(板狀)의 규제판(20)을 접착스테이지(17)의 상면을 따라서 미끄럼이동시켜서 반도체칩(13a,13b)을 제1, 제2흡착공(18a,18b)의 위치의 작업위치로 압출하여 정확하게 작업위치에 설치한다.
제1, 제2흡착공(18a,18b)의 위치의 작업위치에 반도체칩(13a,13b)의 설치가 완료하면, 규제판(20)은 도 2의 D에 표시하는 바와 같이, 초기위치로 복귀한다. 이 상태에서 캐피랄리(1)를 이동시켜서 반도체칩(13a,13b)의 전극의 위에 범프(7)를 형성하는데, 캐피랄리(1)의 이동을 제어하는 구동제어수단은, 다음과 같이 구성되어 있다.
구동제어수단은, 제거접착의 필요성을 판정하여, 제거접착이 필요한 경우에는 범핑할 때에 제거접착용 A1칩(19)의 위치에서 범핑을 실시하여 제거접착을 실행하고, 그 후에 반도체칩(13a,13b)의 작업위치로 캐피랄리(1)를 이동시켜서 범핑하도록 구성되어 있다.
구체적으로는, 구동제어수단은, Au와이어(2)의 선단부를 스파크전류로 녹여서 보올(3)을 형성할 때에, 스파크전류를 측정하며, 측정에 의해서 얻어진 전류값이 규정 범위를 벗어나는 경우에는, 양호한 보올(3)을 형성할 수 없었다고 판단하여, 상기한 바와 같이 Al칩(19)의 위치에서 범핑을 실시하여 제거접착을 실행한다. 제거접착은, 1회 또는 복수회를 반복 실행한다. 보다 구체적으로는, Al칩(19)의 위치에서 5회의 범핑을 실시하여 보올(3)의 온도가 안정된 상태로 반도체칩(13a,13b)에 대한 범핑을 실시한다.
또한, 반도체칩(13a,13b)에 대한 범핑의 실시 중에 양호한 보올(3)을 형성할 수 없었다고 판단한 경우에도, Al칩(19)의 위치에서 범핑을 실시하여 제거접착을 2, 3회 실행한 후에 반도체칩(13a,13b)에 대한 범핑의 실시로 복귀한다.
또, 상기한 구동제어수단은 마이크로컴퓨터에 의해 실현할 수 있다. 또한, 캐피랄리 선단에 와이어나 보올(3)이 나와 있지 않은 경우, 자동으로 와이어를 끌어내어 스파크를 발생시켜서 최초의 보올을 형성하여도 좋다.
이와 같이, 반도체칩(13a,13b)의 작업위치에 근접하여 Al칩(19)을 배설하여, 제거접착을 Al칩(19)으로 실시하도록 구성하였으므로, 연속 자동운전을 할 수 있으며, 또, 접착스테이지(17)와는 별도의 장소에서 제거접착하는 경우에 비해서 캐피랄리(1)의 이동량이 적게 되어 택트효유의 향상을 꾀할 수 있다.

Claims (2)

  1. 반도체칩을 접착스테이지 상면의 규정위치에서 지지하고, 선단부를 녹여서 보올을 형성한 금속와이어를 캐피랄리에 의해서 상기한 반도체칩의 전극의 위로 이동시켜서 금속와이어의 선단에 형성된 보올을 반도체칩의 전극에 접합하여 범프를 형성하는 범프본더에 있어서,
    접착스테이지(17)의 상면에, 또한, 상기한 규정위치에 근접한 위치에 제거접착용 칩(19)을 배치하고,
    캐피랄리의 이동을 제어하는 구동제어수단을, 범핑할 때에 접착스테이지(17) 상에 설치된 상기한 제거접착용 칩(19)의 위치에 상기한 캐피랄리(1)를 이동시켜서 제거접착을 실시하도록 구성한, 범프본더.
  2. 제1항에 있어서, 캐피랄리(1)의 이동을 제어하는 구동제어수단을, 제거접착의 필요성을 판정하여, 제거접착이 필요한 경우에는 범핑할 때에 접착스테이지(17) 상에 설치된 제거접착용 칩(19)의 위치에서 범핑을 실시하여 제거접착을 실행하며, 그 후에 반도체칩의 작업위치로 캐피랄리를 이동시켜서 범핑하도록 구성한, 범프본더.
KR1019970049225A 1996-09-27 1997-09-26 범프본더 KR100459602B1 (ko)

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US6815836B2 (en) * 2003-03-24 2004-11-09 Texas Instruments Incorporated Wire bonding for thin semiconductor package
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US7918378B1 (en) * 2010-08-06 2011-04-05 National Semiconductor Corporation Wire bonding deflector for a wire bonder
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Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
JP2852134B2 (ja) * 1991-02-20 1999-01-27 日本電気株式会社 バンプ形成方法
FR2696279B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Procédé pour permettre le montage d'une puce sur un substrat et puce préparée selon le procédé.
US5601740A (en) * 1993-11-16 1997-02-11 Formfactor, Inc. Method and apparatus for wirebonding, for severing bond wires, and for forming balls on the ends of bond wires
US5813115A (en) * 1994-08-03 1998-09-29 Matsushita Electric Industrial Co., Ltd. Method of mounting a semiconductor chip on a wiring substrate

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US5899375A (en) 1999-05-04
TW392259B (en) 2000-06-01
KR100459602B1 (ko) 2005-02-05
SG71724A1 (en) 2000-04-18
JPH10107074A (ja) 1998-04-24
JP3425510B2 (ja) 2003-07-14

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