TW392259B - Bump bonder - Google Patents

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Publication number
TW392259B
TW392259B TW086113882A TW86113882A TW392259B TW 392259 B TW392259 B TW 392259B TW 086113882 A TW086113882 A TW 086113882A TW 86113882 A TW86113882 A TW 86113882A TW 392259 B TW392259 B TW 392259B
Authority
TW
Taiwan
Prior art keywords
bump
soldering
welding
semiconductor wafer
capillary
Prior art date
Application number
TW086113882A
Other languages
English (en)
Inventor
Takahiro Yonezawa
Makoto Imanishi
Koichi Yoshida
Akihiro Yamamoto
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW392259B publication Critical patent/TW392259B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

A7 B7__ 五、發明說明（/ ) 〔發明的領域〕 本發明係關於半導體晶片實裝於配線基板時，在半導體 晶片的電極上形成凸塊的凸塊焊接機。 〔發明背景〕 關於將半導體晶片實裝於配線基板的裝置，如第3圖所 示半導體晶片13的電極14及配線基板的引線框15以及金 線16形成電氣連接之方法，及第9圖所示在半導體晶片4 的電極5預先形成金凸塊7,將已形成有金凸塊7的半導體 晶片4由導電性接合劑1 〇電氣連接到配線基板1 1電極1 2 的方法。 以金線1 6來做電氣連接之裝置稱爲線焊接機。以金凸塊 _7來做電氣連接之裝置稱爲凸塊焊接機。 第5圖及第6圖係表示藉凸塊焊接機的焊接狀況。 首先，如第5圖所示經由毛細管裝置1連續跑出的金線2 之前端部以火花（spa rk)電流熔化形成球3。同時施加熱及 壓力以及超音波使球3焊合到半導體晶片4的電極5，之後 移動毛細管裝置1，如第6圖所示在球3的正上方形成金線 2的圈部6。而將殘留有圈部6之金線2予以切斷。 如此由凸塊焊接機在半導體晶片4的所有電極5上，形 成由球3及圈部6所成而具有凸塊7的半導體晶片4,如第 7圖所示在將所有凸塊7擠壓到具有表面平坦度的整形台8 ，使凸塊7爲一樣的高度，同時使各凸塊7的突出端面均 能平坦化。 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） (請先間讀背面之注意事項再填寫本頁) ^ i I-----訂---^-------線 經濟部智慧財產局員工消費合作社印製 A7 B7 _—__ 五、發明說明（I ) 接著，如第8圖所示在半導體晶片4之凸塊7週邊複製導 電性黏合劑1 0之膏狀塗膜。於此，在確保有平坦度的整形 台9表面上，以環氧系樹脂作爲黏合劑的導電性黏合劑1 0 附設爲同樣厚度。將高度整理後的圈部6 —起壓接後拉上 時，在所有凸塊7的表面上即附著導電性黏合劑1 〇的胥狀 塗膜。 而且如第9圖所示，在配線基板11以圖型形成的多數導 電膜12上，使半導體晶片4的凸塊7位置對準後經由導電 性黏合劑10予以接合，並加熱使導電性黏合劑10熱硬化 完成實裝。 在凸塊焊接機的情形，由於在金線2的前端部須預先形 成球3，所以預先在金線2的前端形成球，或爲了獲得良 好凸塊7,而到作成適當的球3之前將不良球3去除的捨棄 焊接就有必要。 捨棄焊接的工程如第4圖所示，將不必要的線或球在毛 細管裝置前端彎曲，焊接於捨棄焊接用的半導體晶片4， 在特定長度跑出的線2上以電池11產生火花而形成球3。 於線焊接機之情形，第3 .圖以假想線所示引線框1 5的空 域1 5 a作捨棄接合，將半導體晶片1 3的電極1 4及配線基板 的引線框15以金線16形成電氣連接的作業雖可繼續，可是 在凸塊焊接機時對表面積小的半導體晶片4，現在仍無法 確保去除不良球之捨棄焊接所需之面積。 本發明，係提供爲了使形成凸塊7接觸效率降低抑制到 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注音S事項再填寫本頁) 裝--------訂----„---：---線 ！ 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（3 ) 最低’而將不用的線或不良的球3作爲捨棄焊接，而能形 成良好的凸塊7的凸塊焊接機爲目的。 〔發明的揭示〕 本發明的凸塊焊接機係將形成凸塊之半導體晶片保持於 焊接台的所定位置，近接於上述所定位置配置捨棄焊接用 晶片，對捨棄焊接用晶片實行捨棄焊接。 依據本發明，其特徵爲做爲毛細管作業位置的焊接台不 必大幅地移動也可作成捨棄焊接的凸塊焊合物。 依據申請專利範圍第1項記載的凸塊焊接機，其特徵爲 將半導體晶片保持於焊接台上的所定位置，熔化前端部而 形成球的金屬線由毛細管而移動到上述半導體晶片的電極 上’將形成在金屬線前端的球焊接於半導體晶片的電極來 形成凸塊的凸塊焊接機，在焊接台上接近上述所定位置之 上配置捨棄焊接用晶片，以控制毛細管之移動做爲驅動控 制方法，於焊接時將上述毛細管移動到配置於焊接台上的 上述捨棄焊接用晶片位置上來實行捨棄焊接。 因此，具有毛細管作業位置的焊接台不必要大幅移動也 可做捨棄焊接，使接觸效率之降低可被抑制到很小而可在 半導體晶片上可形成良好的凸塊。 依據申請專利範圍第2項記載之凸塊焊接機，其特徵在 申請專利範圍第1項中，以控制毛細管移動做爲驅動控制 的方法，判定捨棄焊接的必要性，若需要捨棄焊接時在設於 焊接台的捨棄焊接用晶片位置上，作凸塊（b urap〖ng )來進行 本紙張尺度適用中國國家標'準（CNS)A4規格（210 X 297公釐〉 --------.----^--------訂----„---,---線 I (請先閱讀背面之注意事項再填寫本.頁) A7 ___B7__ 五、發明說明（V ) 捨棄焊接’之後將毛細管移動至半導體晶片的作業位置來 作凸塊。 由此，可謀求連續運轉時的無人化運轉。 〔圖式簡單說明〕 第1圖表示實施例的焊接台之平面。 第2A，2β，2C及2D圖表7K實施例的做凸塊.（—huiiaping) 工程。 第3 _爲線焊接機之說明圖。 第4圖表示捨棄焊接工程之說明圖。 第5圖於先前技術的半__導體晶片實裝方法中在毛細管之 前端部形成球的工程說明圖》 第6圖係於凸塊焊接機’將球焊接於半導體晶片的電極 片而在球的正上方形成金屬線圏部之工程說明圖》 第7圖係形成爲凸塊被整形台擠壓的工程說明圖》 第8圖係在凸塊周邊將導電性黏合劑之膏狀塗膜複製到 半導體晶片的工程說明圖。 .第9圖係將半導體晶片焊接於配線基板之導電膜的工程 說明圖。 〔實施例〕 下面，依據第1圖與第2圖說明本發明的凸塊焊接機。 又，與先前技術第5圖或第6圖中同樣作用者亦以同一 符號而說明。 在本發明的凸塊焊接機，如第1圖與第2 A圖所示，在焊 -6- h紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝-------訂·------„----線 I . 經濟部智慧財產局員工消費合作社印製 κι Β7___ 五、發明說明（> ) 接台17上保持凸塊形成之半導體晶片13a，13b的位置鑽 設有第1、第2的吸住孔18a，18b。再者，在焊接台17 近接第1、第2吸住孔18a，18b鑽設第3吸住孔18c。第 1〜第3吸住孔18a〜18c係連接於真空源》 當凸塊作業開始時，如第2B圖所示在焊接台17的第3 吸住孔18c位置上所放置的捨棄焊接用晶片A1晶片19而保 持被吸住。 在此狀態焊接台17的第1，第2吸住孔18a，18b的正 前方位置放置半導體晶片13 a，13b，將被放置的半導體 晶片1 3 a，1 3 b如第2C圖所示使板狀的限制板20沿焊接台 17的上面滑動，使半導體晶片13a，13b推出於第1，第2 吸住孔18a，18b位置的作業位置而正確地定位於作業位 置上。 於第1，第2之吸住孔18a，18b的作業位置上設定半導 體晶片1 3 a，1 3b完成時，限制板20就如第2D圖所示返回 至初期位置。並在此狀態移動毛細管1到半導體晶片1 3 a ，13b的電極上形成凸塊7,可是控制毛細管裝置1移動的 •.驅動控制方法，其構成如下。 . 驅動控制方法之構成，係判斷捨棄焊接的必要性，若須 要捨棄焊接，在形成凸塊時在捨棄焊接用之A1晶片19位 置上形成凸塊而實行捨棄焊接.，之後將毛細管1移動到半 導體晶片13a，13b的作業位置形成凸塊》 具體言之，驅動控制方法，係將金線2的前端部藉火花 本紙張尺度適用中國國家標準（CNS)A4規格（210 Χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---^---Μ---線 ! 經濟部智慧財產局員工消費合作社印製 A7 __ B7 五、發明說明（&) 電流來熔化而形成球3時，測量火花電流而由測量所得電 流値在所定範圍外時，判斷爲未能形成良好的球3，如上 述而在A1晶片19位置上實施凸塊作業而實行捨棄焊接。 捨棄焊接’係一次或重複數次實行》更具體的講，在八丨晶 片19位置實施五次凸塊作業而球3的溫度穩定的狀態下對 半導體晶片13a，13b實施凸塊作業。 又’對半導體晶片13a， 13b的凸塊作業實施中判斷爲 未形成良好球3時’也在A1晶片19位置實施凸塊作業而實 施二’三次.捨棄焊接後返回至對半導體晶片13a，13b實 施凸塊作業。 又’上述驅動控制方法，係可由微電腦來實現。又，毛 細管前端未出現線或球3時，自動地跑出線，並施以火花 放電而形成最初之球也可以。 如此’接近於半導體晶片13a，13b之作業位置上配置 A1晶片19，而對A1晶片19實施捨棄焊接，可連續自動運 轉。而且與接合台17之其它地方作捨棄焊接比較毛細管的 移動量較少即可，可謀求提高接觸效率。 ---；------1!裝--------訂---.-------線- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. ABCD 六、申請專利範圍 （88年10月8曰修正） 第86113S82號「凸塊焊接機」專利案 1 · 一種凸塊焊接機’將半導體晶片保持於焊接台上面之所 定位置，溶化前端部形成球..的金屬線_由，毛.細管而移動到. 上述半導體晶片的電極上，將形成在金屬線前端的球焊. 接於半導體晶片的電極來形成凸塊，其特徵爲，在焊接 台的上面且接近於上述所定位置的位置上配置捨棄焊接 用晶片， 以控制毛細管移動做爲驅動控制方法，在凸塊作業時.. 使上述毛細管移到設於焊接台上的上述捨棄焊接用晶片... 的位置，進行捨棄焊接。 2 ,如申請專利範圍第1項之凸塊焊接機，其中以控制毛細 管移動做爲驅動控制方法，先判定捨棄焊接之必要性， 在需要捨棄焊接時在焊接台上的捨棄焊接用晶片之位辱 上實施凸塊作業以進行捨棄焊接，之後將毛細管移動到 半導體晶片的作業位置來實施凸塊作業》 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 用中國蘇標準(CNS ) A4規格（210X 297公釐） ABCD 六、申請專利範圍 （88年10月8曰修正） 第86113S82號「凸塊焊接機」專利案 1 · 一種凸塊焊接機’將半導體晶片保持於焊接台上面之所 定位置，溶化前端部形成球..的金屬線_由，毛.細管而移動到. 上述半導體晶片的電極上，將形成在金屬線前端的球焊. 接於半導體晶片的電極來形成凸塊，其特徵爲，在焊接 台的上面且接近於上述所定位置的位置上配置捨棄焊接 用晶片， 以控制毛細管移動做爲驅動控制方法，在凸塊作業時.. 使上述毛細管移到設於焊接台上的上述捨棄焊接用晶片... 的位置，進行捨棄焊接。 2 ,如申請專利範圍第1項之凸塊焊接機，其中以控制毛細 管移動做爲驅動控制方法，先判定捨棄焊接之必要性， 在需要捨棄焊接時在焊接台上的捨棄焊接用晶片之位辱 上實施凸塊作業以進行捨棄焊接，之後將毛細管移動到 半導體晶片的作業位置來實施凸塊作業》 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 用中國蘇標準(CNS ) A4規格（210X 297公釐）
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US6815836B2 (en) * 2003-03-24 2004-11-09 Texas Instruments Incorporated Wire bonding for thin semiconductor package
TWI343611B (en) * 2007-06-08 2011-06-11 Orient Semiconductor Elect Ltd Semiconductor package and method for discharging electronic devices on a substrate
US7918378B1 (en) * 2010-08-06 2011-04-05 National Semiconductor Corporation Wire bonding deflector for a wire bonder
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US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
JP2852134B2 (ja) * 1991-02-20 1999-01-27 日本電気株式会社 バンプ形成方法
FR2696279B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Procédé pour permettre le montage d'une puce sur un substrat et puce préparée selon le procédé.
US5601740A (en) * 1993-11-16 1997-02-11 Formfactor, Inc. Method and apparatus for wirebonding, for severing bond wires, and for forming balls on the ends of bond wires
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