KR102965310B1 - Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 - Google Patents

Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

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Publication number
KR102965310B1
KR102965310B1 KR1020247026805A KR20247026805A KR102965310B1 KR 102965310 B1 KR102965310 B1 KR 102965310B1 KR 1020247026805 A KR1020247026805 A KR 1020247026805A KR 20247026805 A KR20247026805 A KR 20247026805A KR 102965310 B1 KR102965310 B1 KR 102965310B1
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KR
South Korea
Prior art keywords
collimator
aspect ratio
hexagonal apertures
article
apertures
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KR1020247026805A
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English (en)
Korean (ko)
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KR20240127488A (ko
Inventor
마틴 리 리커
푸홍 창
안토니 인판테
청 왕
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority to KR1020267014616A priority Critical patent/KR20260073480A/ko
Publication of KR20240127488A publication Critical patent/KR20240127488A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020247026805A 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 Active KR102965310B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020267014616A KR20260073480A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562246967P 2015-10-27 2015-10-27
US62/246,967 2015-10-27
PCT/US2016/053970 WO2017074633A1 (en) 2015-10-27 2016-09-27 Biasable flux optimizer/collimator for pvd sputter chamber
KR1020187014899A KR102695398B1 (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187014899A Division KR102695398B1 (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020267014616A Division KR20260073480A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Publications (2)

Publication Number Publication Date
KR20240127488A KR20240127488A (ko) 2024-08-22
KR102965310B1 true KR102965310B1 (ko) 2026-05-13

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247026805A Active KR102965310B1 (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
KR1020267014616A Pending KR20260073480A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
KR1020187014899A Active KR102695398B1 (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020267014616A Pending KR20260073480A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
KR1020187014899A Active KR102695398B1 (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Country Status (8)

Country Link
US (4) US9960024B2 (enExample)
EP (3) EP4235744A3 (enExample)
JP (3) JP7034912B2 (enExample)
KR (3) KR102965310B1 (enExample)
CN (6) CN110438464A (enExample)
SG (2) SG11201802667PA (enExample)
TW (5) TWI669752B (enExample)
WO (1) WO2017074633A1 (enExample)

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US20190353919A1 (en) * 2018-05-21 2019-11-21 Applied Materials, Inc. Multi-zone collimator for selective pvd
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CN109300764A (zh) * 2018-10-31 2019-02-01 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
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CN115449762A (zh) * 2022-08-22 2022-12-09 无锡尚积半导体科技有限公司 一种用于磁控溅射设备的准直器及磁控溅射设备
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CN119020736B (zh) * 2023-05-24 2026-02-06 北京北方华创微电子装备有限公司 物理气相沉积设备的准直装置及物理气相沉积设备
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EP3920210A1 (en) 2021-12-08
CN206418192U (zh) 2017-08-18
US10727033B2 (en) 2020-07-28
TWI702636B (zh) 2020-08-21
CN110438464A (zh) 2019-11-12
CN118127471A (zh) 2024-06-04
TW202501569A (zh) 2025-01-01
CN112030123A (zh) 2020-12-04
JP2022079472A (ja) 2022-05-26
US20170117121A1 (en) 2017-04-27
US11309169B2 (en) 2022-04-19
US20190279851A1 (en) 2019-09-12
JP2018533673A (ja) 2018-11-15
KR20180063347A (ko) 2018-06-11
SG11201802667PA (en) 2018-05-30
US20180218889A1 (en) 2018-08-02
TWI909376B (zh) 2025-12-21
TWI669752B (zh) 2019-08-21
TW201724196A (zh) 2017-07-01
US20200357617A1 (en) 2020-11-12
TW202111779A (zh) 2021-03-16
US9960024B2 (en) 2018-05-01
KR20260073480A (ko) 2026-05-21
TW202305885A (zh) 2023-02-01
TWI839710B (zh) 2024-04-21
EP4235744A2 (en) 2023-08-30
WO2017074633A1 (en) 2017-05-04
EP3920210B1 (en) 2023-05-31
EP3369108B1 (en) 2021-08-04
SG10202003396PA (en) 2020-06-29
TW201944465A (zh) 2019-11-16
CN106987815A (zh) 2017-07-28
EP3369108A1 (en) 2018-09-05
JP2024127896A (ja) 2024-09-20
EP4235744A3 (en) 2023-10-11
TWI761889B (zh) 2022-04-21
JP7034912B2 (ja) 2022-03-14
US10347474B2 (en) 2019-07-09
CN118127470A (zh) 2024-06-04
EP3369108A4 (en) 2019-06-19
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